Determining exchange splitting in a magnetic semiconductor by spin-filter tunneling

A large exchange splitting of the conduction band in ultrathin films of the ferromagnetic semiconductor EuO was determined quantitatively, by using EuO as a tunnel barrier and fitting the current-voltage characteristics and temperature dependence to tunneling theory. This exchange splitting leads to different tunnel barrier heights for spin-up and spin-down electrons and is large enough to produce a near-fully spin-polarized current. Moreover, the magnetic properties of these ultrathin films (<6 nm) show a reduction in Curie temperature with decreasing thickness, in agreement with theoretical calculation [R. Schiller, Phys. Rev. Lett. 86, 3847 (2001)10.1103/Phys. Rev. Lett.86.3847].

Identification of the dominant precession-damping mechanism in Fe, Co, and Ni by first-principles calculations

The Landau-Lifshitz equation reliably describes magnetization dynamics using a phenomenological treatment of damping. This Letter presents first-principles calculations of the damping parameters for Fe, Co, and Ni that quantitatively agree with existing ferromagnetic resonance measurements. This agreement establishes the dominant damping mechanism for these systems and takes a significant step toward predicting and tailoring the damping constants of new materials.