Realization of Harmonic Oscillator Arrays with Graded Semiconductor Quantum Wells

The harmonic oscillator is a foundational concept in both theoretical and experimental quantum mechanics. Here, we demonstrate harmonic oscillators in a semiconductor platform by faithfully implementing continuously graded alloy semiconductor quantum wells. Unlike current technology, this technique avoids interfaces that can hamper the system and allows for the production of multiwell stacks several micrometers thick. The experimentally measured system oscillations are at 3 THz for two structures containing 18 and 54 parabolic quantum wells. Absorption at room temperature is achieved: this is as expected from a parabolic potential and is unlike square quantum wells that require cryogenic operation. Linewidths below 11% of the central frequency are obtained up to 150 K, with a 5.6% linewidth obtained at 10 K. Furthermore, we show that the system correctly displays an absence of nonlinearity despite electron-electron interactions-analogous to the Kohn theorem. These high-quality structures already open up several new experimental vistas.

W line shape in the resistively detected nuclear magnetic resonance

The resistively detected nuclear magnetic resonance (RDNMR) performed on a two-dimensional electron gas is known to exhibit a peculiar 'dispersive' line shape at some filling factors, especially around ν = 1. Here, we study in detail the inversion of the dispersive line shape as a function of the filling factor from ν = 1 to 2/3. The RDNMR spectra show a new characteristic W line shape in the longitudinal resistance, whereas dispersive lines detected in the Hall resistance remain unchanged. This W resonance, like the dispersive line, can be fitted correctly by a model of two independent response functions, which are the signatures of polarized and unpolarized electronic sub-systems.

Bipolar spin blockade and coherent state superpositions in a triple quantum dot

Spin qubits based on interacting spins in double quantum dots have been demonstrated successfully. Readout of the qubit state involves a conversion of spin to charge information, which is universally achieved by taking advantage of a spin blockade phenomenon resulting from Pauli's exclusion principle. The archetypal spin blockade transport signature in double quantum dots takes the form of a rectified current. At present, more complex spin qubit circuits including triple quantum dots are being developed. Here we show, both experimentally and theoretically, that in a linear triple quantum dot circuit the spin blockade becomes bipolar with current strongly suppressed in both bias directions and also that a new quantum coherent mechanism becomes relevant. In this mechanism, charge is transferred non-intuitively via coherent states from one end of the linear triple dot circuit to the other, without involving the centre site. Our results have implications for future complex nanospintronic circuits.

Quantum interference between three two-spin states in a double quantum dot

Qubits based on the singlet (S) and the triplet (T(0), T(+)) states in double quantum dots have been demonstrated in separate experiments. It has been recently proposed theoretically that under certain conditions a quantum interference could occur from the interplay between these two qubit species. Here we report experiments and modeling that confirm these theoretical predictions and identify the conditions under which this interference occurs. Density matrix calculations show that the interference pattern manifests primarily via the occupation of the common singlet state. The S/T(0) qubit is found to have a much longer coherence time as compared to the S/T(+) qubit.

Terahertz quantum cascade lasers operating up to ∼ 200 K with optimized oscillator strength and improved injection tunneling

A new temperature performance record of 199.5 K for terahertz quantum cascade lasers is achieved by optimizing the lasing transition oscillator strength of the resonant phonon based three-well design. The optimum oscillator strength of 0.58 was found to be larger than that of the previous record (0.41) by Kumar et al. [Appl. Phys. Lett. 94, 131105 (2009)]. The choice of tunneling barrier thicknesses was determined with a simplified density matrix model, which converged towards higher tunneling coupling strengths than previously explored and nearly perfect alignment of the states across the injection and extraction barriers at the design electric field. At 8 K, the device showed a threshold current density of 1 kA/cm2, with a peak output power of ∼ 38 mW, and lasing frequency blue-shifting from 2.6 THz to 2.85 THz with increasing bias. The wavelength blue-shifted to 3.22 THz closer to the maximum operating temperature of 199.5 K, which corresponds to ∼ 1.28ħω/κB. The voltage dependence of laser frequency is related to the Stark effect of two intersubband transitions and is compared with the simulated gain spectra obtained by a Monte Carlo approach.

Electrically switching transverse modes in high power THz quantum cascade lasers

The design and fabrication of a high power THz quantum cascade laser (QCL), with electrically controllable transverse mode is presented. The switching of the beam pattern results in dynamic beam switching using a symmetric side current injection scheme. The angular-resolved L-I curves measurements, near-field and far-field patterns and angular-resolved lasing spectra are presented. The measurement results confirm that the quasi-TM(01) transverse mode lases first and dominates the lasing operation at lower current injection, while the quasi-TM(00) mode lases at a higher threshold current density and becomes dominant at high current injection. The near-field and far-field measurements confirm that the lasing THz beam is maneuvered by 25 degrees in emission angle, when the current density changes from 1.9 kA/cm(2) to 2.3 kA/cm(2). A two-dimension (2D) current and mode calculation provides a simple model to explain the behavior of each mode under different bias conditions.

Mode-locked pulses from mid-infrared quantum cascade lasers

In this study, we report the unequivocal demonstration of midinfrared mode-locked pulses from quantum cascade lasers. The train of short pulses was generated by actively modulating the current and hence the gain of an edge-emitting quantum cascade laser (QCL). Pulses with duration of about 3 ps at full-width-at-half-maxima and energy of 0.5 pJ were characterized using a second-order interferometric autocorrelation technique based on a nonlinear quantum well infrared photodetector. The mode-locking dynamics in the QCLs was modeled based on the Maxwell-Bloch equations in an open two-level system. Our model reproduces the overall shape of the measured autocorrelation traces and predicts that the short pulses are accompanied by substantial wings as a result of strong spatial hole burning. The range of parameters where short mode-locked pulses can be formed is found.

Normal incidence detection of ultraviolet, visible, and mid-infrared radiation in a single GaAs/AlGaAs device

A GaAs/AlGaAs detector is demonstrated showing multiple detection capabilities. This detector exhibits a broad spectral response in the 200-870 nm (ultraviolet-visible) range for forward bias and in the 590-870 nm (visible) range for reverse bias. In the mid-IR region, two peaks at 5 and 8.9 microm can be observed for low and high forward bias voltages, respectively. In addition, the peak at 8.9 microm is sensitive to the polarization of the incoming radiation.

Quantum dots for terahertz generation

Nanostructures made of semiconductors, such as quantum wells and quantum dots (QD), are well known, and some have been incorporated in practical devices. Here we focus on novel structures made of QDs and related devices for terahertz (THz) generation. Their potential advantages, such as low threshold current density, high characteristic temperature, increased differential gain, etc, make QDs promising candidates for light emitting applications in the THz region. Our idea of using resonant tunneling through QDs is presented, and initial results on devices consisting of self-assembled InAs QDs in an undoped GaAs matrix, with a design incorporating a GaInNAs/GaAs short period superlattice, are discussed. Moreover, shallow impurities are also being explored for possible THz emission: the idea is based on the tunneling through bound states of individual donor or acceptor impurities in the quantum well. Initial results on devices having an AlGaAs/GaAs double-barrier resonant tunneling structure are discussed.

Coupled electron-phonon modes in optically pumped resonant intersubband lasers

Intersubband lasing at 12-16 microm based on a CO2 laser pumped stimulated resonant Raman process in GaAs/AlGaAs three-level double-quantum-well structures is reported. The presence, or lack of, lasing action provides evidence for resonantly coupled modes of collective electronic intersubband transitions and longitudinal optical phonons. An anticrossing behavior of these modes is clearly seen when the difference between the pump and lasing energies (i.e., Stokes Raman shift) is compared with the subband separation. This work reveals the significance of the strong coupling between intersubband transitions and phonons and raises a new possibility of realizing a phonon "laser."

Resistively detected nuclear magnetic resonance in the quantum hall regime: possible evidence for a Skyrme crystal

Resistively detected nuclear magnetic resonance measurements have been performed on a high mobility heterostructure in the quantum Hall regime. At millikelvin temperatures the nuclear resonances are observed in the vicinity of various integer and fractional filling factors without previous dynamic nuclear polarization. Near nu = 1, the observed large enhancement of the resonance amplitude accompanied by a reduction of T1 strongly suggests a greatly increased coupling between the electronic and nuclear spin systems. This is consistent with the proposed coupling of the nuclear spin system to the Goldstone mode of the Skyrme crystal.

Coupling and entangling of quantum states in quantum dot molecules

We demonstrate coupling and entangling of quantum states in a pair of vertically aligned, self-assembled quantum dots by studying the emission of an interacting electron-hole pair (exciton) in a single dot molecule as a function of the separation between the dots. An interaction-induced energy splitting of the exciton is observed that exceeds 30 millielectron volts for a dot layer separation of 4 nanometers. The results are interpreted by mapping the tunneling of a particle in a double dot to the problem of a single spin. The electron-hole complex is shown to be equivalent to entangled states of two interacting spins.