Robust Two-Dimensional Ferromagnetism in Cr5Te8/CrTe2 Heterostructure with Curie Temperature above 400 K

The discovery of ferromagnetism in two-dimensional (2D) van der Waals crystals has generated widespread interest. The seeking of robust 2D ferromagnets with high Curie temperature (Tc) is vitally important for next-generation spintronic devices. However, owing to the enhanced spin fluctuation and weak exchange interaction upon the reduced dimensionalities, the exploring of robust 2D ferromagnets with Tc > 300 K is highly demanded but remains challenging. In this work, we fabricated air-stable 2D Cr5Te8/CrTe2 vertical heterojunctions with Tc above 400 K by the chemical vapor deposition method. Transmission electron microscopy demonstrates a high-quality-crystalline epitaxial structure between tri-Cr5Te8 and 1T-CrTe2 with striped moiré patterns and a superior ambient stability over six months. A built-in dual-axis strain together with strong interfacial coupling cooperatively leads to a record-high Tc for the CrxTey family. A temperature-dependent spin-flip process induces the easy axis of magnetization to rotate from the out-of-plane to the in-plane direction, indicating a phase-dependent proximity coupling effect, rationally interpreted by first-principles calculations of the magnetic anisotropy of a tri-Cr5Te8 and 1T-CrTe2 monolayer. Our results provide a material realization of effectively enhancing the transition temperature of 2D ferromagnetism and manipulating the spin-flip of the easy axis, which will facilitate future spintronic applications.

Proximity-Induced Interfacial Room-Temperature Ferromagnetism in Semiconducting Fe3GeTe2

The discoveries of two-dimensional ferromagnetism and magnetic semiconductors highly enrich the magnetic material family for constructing spin-based electronic devices, but with an acknowledged challenge that the Curie temperature (Tc) is usually far below room temperature. Many efforts such as voltage control and magnetic ion doping are currently underway to enhance the functional temperature, in which the involvement of additional electrodes or extra magnetic ions limits their application in practical devices. Here we demonstrate that the magnetic proximity, a robust effect but with elusive mechanisms, can induce room-temperature ferromagnetism at the interface between sputtered Pt and semiconducting Fe3GeTe2, both of which do not show ferromagnetism at 300 K. The independent electrical and magnetization measurements, structure analysis, and control samples with Ta highlighting the role of Pt confirm that the ferromagnetism with the Tc of above 400 K arises from the Fe3GeTe2/Pt interfaces, rather than Fe aggregation or other artificial effects. Moreover, contrary to conventional ferromagnet/Pt structures, the spin current generated by the Pt layer is enhanced more than two times at the Fe3GeTe2/Pt interfaces, indicating the potential applications of the unique proximity effect in building highly efficient spintronic devices. These results may pave a new avenue to create room-temperature functional spin devices based on low-Tc materials and provide clear evidence of magnetic proximity effects by using nonferromagnetic materials.

Proximity Coupling of Graphene to a Submonolayer 2D Magnet

Imprinting magnetism into graphene may lead to unconventional electron states and enable the design of spin logic devices with low power consumption. The ongoing active development of 2D magnets suggests their coupling with graphene to induce spin-dependent properties via proximity effects. In particular, the recent discovery of submonolayer 2D magnets on surfaces of industrial semiconductors provides an opportunity to magnetize graphene coupled with silicon. Here, synthesis and characterization of large-area graphene/Eu/Si(001) heterostructures combining graphene with a submonolayer magnetic superstructure of Eu on silicon are reported. Eu intercalation at the interface of the graphene/Si(001) system results in a Eu superstructure different from those formed on pristine Si in terms of symmetry. The resulting system graphene/Eu/Si(001) exhibits 2D magnetism with the transition temperature controlled by low magnetic fields. Negative magnetoresistance and the anomalous Hall effect in the graphene layer provide evidence for spin polarization of the carriers. Most importantly, the graphene/Eu/Si system seeds a class of graphene heterostructures based on submonolayer magnets aiming at applications in graphene spintronics.

Correlation-Driven Topological Transition in Janus Two-Dimensional Vanadates

The appearance of intrinsic ferromagnetism in 2D materials opens the possibility of investigating the interplay between magnetism and topology. The magnetic anisotropy energy (MAE) describing the easy axis for magnetization in a particular direction is an important yardstick for nanoscale applications. Here, the first-principles approach is used to investigate the electronic band structures, the strain dependence of MAE in pristine VSi₂Z₄ (Z = P, As) and its Janus phase VSiGeP₂As₂ and the evolution of the topology as a function of the Coulomb interaction. In the Janus phase the compound presents a breaking of the mirror symmetry, which is equivalent to having an electric field, and the system can be piezoelectric. It is revealed that all three monolayers exhibit ferromagnetic ground state ordering, which is robust even under biaxial strains. A large value of coupling J is obtained, and this, together with the magnetocrystalline anisotropy, will produce a large critical temperature. We found an out-of-plane (in-plane) magnetization for VSi₂P₄ (VSi₂As₄), and an in-plane magnetization for VSiGeP₂As₂. Furthermore, we observed a correlation-driven topological transition in the Janus VSiGeP₂As₂. Our analysis of these emerging pristine and Janus-phased magnetic semiconductors opens prospects for studying the interplay between magnetism and topology in two-dimensional materials.

Layer-Number-Independent Two-Dimensional Ferromagnetism in Cr3Te4

In a conventional magnetic material, a long-range magnetic order develops in three dimensions, and reducing a layer number weakens its magnetism. Here we demonstrate anomalous layer-number-independent ferromagnetism down to the two-dimensional (2D) limit in a metastable phase of Cr₃Te₄. We fabricated Cr₃Te₄ thin films by molecular-beam epitaxy and found that Cr₃Te₄ could host two distinct ferromagnetic phases characterized with different Curie temperatures (T_C). One is the bulk-like "high-T_C phase" showing room-temperature ferromagnetism, which is consistent with previous studies. The other is the metastable "low-T_C phase" with T_C ≈ 160 K, which exhibits a layer-number-independent T_C down to the 2D limit in marked contrast with the conventional high-T_C phase, demonstrating a purely 2D nature of its ferromagnetism. Such significant differences between two distinct phases could be attributed to a small variation in the doping level, making this material attractive for future ultracompact spintronics applications with potential gate-tunable room-temperature 2D ferromagnetism.

Exchange Bias State at the Crossover to 2D Ferromagnetism

The inherent malleability of 2D magnetism provides access to unconventional quantum phases, in particular those with coexisting magnetic orders. Incidentally, in a number of materials, the magnetic state in the bulk undergoes a fundamental change when the system is pushed to the monolayer limit. Therefore, a competition of magnetic states can be expected in the crossover region. Here, an exchange bias state is observed at the crossover from 3D antiferromagnetism to 2D ferromagnetism driven by the number of monolayers in the metalloxene GdSi₂. The material constitutes a stack of alternating monolayers of Gd and silicene, the Si analogue of graphene. The exchange bias manifests itself as a shift of the hysteresis loop signifying coupling of magnetic systems, as evidenced by magnetization studies. Two features distinguish the phenomenon: (i) it is intrinsic, i.e. it is detected in an individual compound; (ii) the exchange bias field, 1.5 kOe, is unusually high, which is conducive to applications. The results suggest magnetic derivatives of 2D-Xenes to be prospective materials for ultracompact spintronics.

2D spin transport through graphene-MnBi2Te4heterojunction

The development of two-dimensional (2D) magnetic semiconductors promotes the study of nonvolatile control of magnetoelectric nanodevices. MnBi₂Te₄is the first realization of antiferromagnetic topological insulator. In semiconductor circuits, metal-semiconductor contacts are usually essential. In future all-carbon circuits, graphene is a promising material for 2D conductive connections. This work studies electronic transport through graphene-MnBi₂Te₄-graphene junctions. We find that graphene-MnBi₂Te₄interfaces are perfect Ohmic contacts, which benefits the use of MnBi₂Te₄in carbon circuits. The currents through MnBi₂Te₄junctions possess high spin polarization. Compared with usual van der Waals junctions, lateral graphene-MnBi₂Te₄-graphene junctions present a lower barrier and much higher conductance to electrons. These findings may provide guidance for further study of 2D spin filtering.

CrxPt1-xTe2 (x ≤ 0.45): A Family of Air-Stable and Exfoliatable van der Waals Ferromagnets

The development of thermally robust, air-stable, exfoliatable two-dimensional van der Waals ferromagnetic materials with high transition temperatures is of great importance. Here, we establish a family of magnetic alloys, Cr_xPt_1-xTe₂ (x ≤ 0.45), that combines the stability of the late transition metal dichalcogenide PtTe₂ with magnetism from Cr. These materials are easily grown in crystal form from the melt, are stable in ambient conditions, and have among the highest concentrations of magnetic element substitution in transition metal dichalcogenide alloys. The highest Cr-substituted material, Cr_0.45Pt_0.55Te₂, exhibits ferromagnetic behavior below 220 K, and the easy axis is along the c-axis of the material, as determined using a combination of neutron diffraction and magnetic susceptibility measurements. These materials are metallic, with appreciable magnetoresistance below the Curie temperature. Single-crystal and powder diffraction measurements indicate Cr readily alloys onto the Pt site and does not sit in the van der Waals space, allowing these materials to be readily exfoliated to the few-layer regime. In summary, this air-stable, exfoliatable, high transition temperature ferromagnet shows great potential as building block for future 2D devices.

Electric-Field-Driven Negative Differential Conductance in 2D van der Waals Ferromagnet Fe3GeTe2

Understanding quantum tunneling principles over two-dimensional (2D) van der Waals (vdW) ferromagnets at the atomic level is essential and complementary to the fundamental study of low-dimensional strong correlated systems and is critical for the development of magnetic tunneling devices. Here, we demonstrate a local electric-field controlled negative differential conductance (NDC) in 2D vdW ferromagnet Fe₃GeTe₂ (FGT) by using scanning tunneling microscopy (STM). The STM reveals that NDC shows an atomic position dependence and can be precisely modulated by altering the tunneling junction. The band shift together with electric-field-driven 3d-orbital occupancy modulates the sensitive magnetic anisotropic energy (MAE) in 2D FGT and consequently leads to electric-field-tunable NDC, which is also verified by theoretical simulation. This work realizes the electric-field-driven NDC in 2D ferromagnet FGT, which paves a way to design and develop applications based on 2D vdW magnets.

Charge-transfer-induced 2D ferromagnetism and realization of thermo-remnant memory effect in ultrathinß-NiOOH-encapsulated graphene

For graphene-based 2D materials, charge transfer at the interface between graphene and ferromagnetic metal leads to many intriguing phenomena. However, because of the unidirectional spin orientation in ferromagnetic transition metals, interface interaction plays a detrimental role in diminishing the magnetic parameters on 2D surfaces. To overcome this issue, we have synthesized ultrathin 2D weak antiferromagneticβ-NiOOH layers on a graphene surface. By exploiting the charge transfer effect and tuning the thickness of the thinβ-NiOOH layers, conversion of ferromagnetism along with giant coercivity and the thermo-remnant magnetic memory effect were observed. As antiferromagnets have two spin orientations, transfer of charge at the interface breaks the nullifying effect of zero magnetization in antiferromagnets and the combined system behaves like a 2D ferrimagnet. Whenever, the sandwich structure ofβ-NiOOH/graphene/β-NiOOH is formed, it also shows interlayer exchange coupling those results in huge exchange bias and anomalous temperature dependence of coercivity. Due to the strong exchange interaction between the layers, the combined system also shows a robust temperature-based memory effect. Spin-polarized density functional theory was also calculated to confirm the interface interaction and its quantitative evaluation by means of Bader charge analysis and charge-density mapping.

Optically Driven Magnetic Phase Transition of Monolayer RuCl3

Strong light-matter interactions within nanoscale structures offer the possibility of optically controlling material properties. Motivated by the recent discovery of intrinsic long-range magnetic order in two-dimensional materials, which allow for the creation of novel magnetic devices of unprecedented small size, we predict that light can couple with magnetism and efficiently tune magnetic orders of monolayer ruthenium trichloride (RuCl₃). First-principles calculations show that both free carriers and optically excited electron-hole pairs can switch monolayer RuCl₃ from a proximate spin-liquid phase to a stable ferromagnetic phase. Specifically, a moderate electron-hole pair density (on the order of 1 × 10¹³ cm^-2) can significantly stabilize the ferromagnetic phase by 10 meV/f.u. in comparison to the competing zigzag phase, so that the predicted ferromagnetism can be driven by optical pumping experiments. Analysis shows that this magnetic phase transition is driven by a combined effect of doping-induced lattice strain and itinerant ferromagnetism. According to Ising-model calculations, we find that the Curie temperature of the ferromagnetic phase can be increased significantly by raising carrier or electron-hole pair density. This enhanced optomagnetic effect opens new opportunities to manipulate two-dimensional magnetism through noncontact, optical approaches.

Chemically Exfoliated VSe2 Monolayers with Room-Temperature Ferromagnetism

Among van der Waals layered ferromagnets, monolayer vanadium diselenide (VSe₂ ) stands out due to its robust ferromagnetism. However, the exfoliation of monolayer VSe₂ is challenging, not least because the monolayer flake is extremely unstable in air. Using an electrochemical exfoliation approach with organic cations as the intercalants, monolayer 1T-VSe₂ flakes are successfully obtained from the bulk crystal at high yield. Thiol molecules are further introduced onto the VSe₂ surface to passivate the exfoliated flakes, which improves the air stability of the flakes for subsequent characterizations. Room-temperature ferromagnetism is confirmed on the exfoliated 2D VSe₂ flakes using a superconducting quantum interference device (SQUID), X-ray magnetic circular dichroism (XMCD), and magnetic force microscopy (MFM), where the monolayer flake displays the strongest ferromagnetic properties. Se vacancies, which can be ubiquitous in such materials, also contribute to the ferromagnetism of VSe₂ , although density functional theory (DFT) calculations show that such effect can be minimized by physisorbed oxygen molecules or covalently bound thiol molecules.