Tunable Fabry-Perot Interferometer Designed for Far-Infrared Wavelength by Utilizing Electromagnetic Force

A tunable Fabry-Perot interferometer (TFPI)-type wavelength filter designed for the long-wavelength infrared (LWIR) region is fabricated using micro electro mechanical systems (MEMS) technology and the novel polydimethylsiloxane (PDMS) micro patterning technique. The structure of the proposed infrared sensor consists of a Fabry-Perot interferometer (FPI)-based optical filter and infrared (IR) detector. An amorphous Si-based thermal IR detector is located under the FPI-based optical filter to detect the IR-rays filtered by the FPI. The filtered IR wavelength is selected according to the air etalon gap between reflectors, which is defined by the thickness of the patterned PDMS. The 8 μm-thick PDMS pattern is fabricated on a 3 nm-thick Al layer used as a reflector. The air etalon gap is changed using the electromagnetic force between the permanent magnet and solenoid. The measured PDMS gap height is about 2 μm, ranging from 8 μm to 6 μm, with driving current varying from 0 mA to 600 mA, resulting in a tunable wavelength range of 4 μm. The 3-dB bandwidth (full width at half maximum, FWHM) of the proposed filter is 1.5 nm, while the Free Spectral Range (FSR) is 8 μm. Experimental results show that the proposed TFPI can detect a specific wavelength at the long LWIR region.

High Conversion Efficiency Carbon Nanotube-Based Barrier-Free Bipolar-Diode Photodetector

Conversion efficiency (CE) is the most important figure of merit for photodetectors. For carbon nanotubes (CNT) based photodetectors, the CE is mainly determined by excitons dissociation and transport of free carriers toward contacts. While phonon-assisted exciton dissociation mechanism is effective in split-gate CNT p-n diodes, the CE is typically low in these devices, approximately 1-5%. Here, we evaluate the performance of a barrier-free bipolar diode (BFBD), which is basically a semiconducting CNT asymmetrically contacted by perfect n-type ohmic contact (Sc) and p-type ohmic contact (Pd) at the two ends of the diode. We show that the CE in short channel BFBD devices (e.g., 60 nm) is over 60%, and it reduces rapidly with increasing channel length. We find that the electric-field-assisted mechanism dominates the dissociation rate of excitons in BFBD devices at zero bias and thus the photocurrent generation process. By performing a time-resolved and spatial-resolved Monte Carlo simulation, we find that there exists an effective electron (hole)-rich region near the n-type (p-type) electrode in the asymmetrically contacted BFBD device, where the electric-field strength is larger than 17 V/μm and exciton dissociation is extremely fast (<0.1 ps), leading to very high CE in the BFBD devices.

Improved Near-Infrared Spectral Responsivity Scale

A cryogenic radiometer-based system was constructed at the National Institute of Standards and Technology for absolute radiometric measurements to improve detector spectral power responsivity scales in the wavelength range from 900 nm to 1800 nm. In addition to the liquid-helium-cooled cryogenic radiometer, the system consists of a 100 W quartz-tungsten-halogen lamp light source and a 1 m single-grating monochromator for wavelength selection. The system was characterized and the uncertainty in spectral power responsivity measurements evaluated. A variety of photodetectors, including indium gallium arsenide photodiodes (InGaAs), germanium (Ge) photodiodes, and pyroelectric detectors, were subsequently calibrated. Over most of the spectral range, the spectral power responsivity of the photodetectors can be measured with a combined relative standard uncertainty of 0.4 % or less. This is more than a factor of two smaller than our previous capabilities, and represents a significant improvement in the near infrared (NIR) spectral power responsivity scale maintained at NIST. We discuss the characterization of the monochromator-based system and present results of photodetector spectral power responsivity calibrations.