In-depth analysis of anisotropic magnetoconductance in Bi2Se3thin films with electron-electron interaction corrections

A combination of out-of-plane (OOP) and in-plane (IP) magnetoconductance (MC) study in topological insulators (TI) is often used as an experimental technique to probe weak anti-localization (WAL) response of the topological surface states (TSSs). However, in addition to the above WAL response, weak localization (WL) contribution from conducting bulk states are also known to coexist and contribute to the overall MC; a study that has so far received limited attention. In this article, we accurately extract the above WL contribution by systematically analyzing the temperature and magnetic field dependency of conductivity in Bi₂Se₃films. For accurate analysis, we quantify the contribution of electron-electron interactions to the measured MC which is often ignored in the WAL studies. Moreover, we show that the WAL effect arising from the TSSs with finite penetration depth, for OOP and IP magnetic field can together explain the anisotropic magnetoconductance (AMC) and, thus, the investigated AMC study can serve as a useful technique to probe the parameters like phase coherence length and penetration depth that characterise the TSSs in 3D TIs. We also demonstrate that increase in bulk-disorder, achieved by growing the films on amorphous SiO₂substrate rather than on crystalline Al₂O₃(0001), can lead to stronger decoupling between the top and bottom surface states of the film.

Finite transverse conductance and anisotropic magnetoconductance under an applied in-plane magnetic field in two-dimensional electron gases with strong spin-orbit coupling

The current in response to a bias in certain two-dimensional electron gas (2DEG), can have a nonzero transverse component under a finite magnetic field applied in the plane where electrons are confined. This phenomenon known as planar Hall effect (PHE) is accompanied by dependencies of both the longitudinal and the transverse components of the current on the angleϕbetween the bias direction and the magnetic field. This effect can be observed in a variety of systems, for example in topological insulators where spin-momentum locking of the topologically protected surface states is the root cause for the effect and in magnetic systems where anisotropic magnetic ordering induces it. In 2DEG with spin orbit coupling (SOC) such as oxide interfaces, this effect has been experimentally witnessed. Further, a fourfold oscillation in longitudinal resistance as a function ofϕhas also been observed. Motivated by these, we perform scattering theory calculations on a 2DEG with SOC in presence of an in-plane magnetic field connected to two-dimensional leads on either sides to obtain longitudinal and transverse conductances. We find that the longitudinal conductance isπ-periodic and the transverse conductance is 2π-periodic inϕ. The magnitude of oscillation in transverse conductance withϕis enhanced in certain patches in (α,b)-plane whereαis the strength of SOC andbis Zeeman energy due to magnetic field. The oscillation in transverse conductance withϕcan be highly multi-fold for large values ofαandb. The highly multi-fold oscillations of transverse conductance are due to Fabry-Pérot type interference between the modes in the central region as backed by its length dependent features. Our study establishes that SOC in a material is sufficient to observe PHE without the need for anisotropic magnetic ordering or nontrivial topology of the bandstructure.

Quantitative Analysis of Weak Antilocalization Effect of Topological Surface States in Topological Insulator BiSbTeSe2

Quantitative analysis of the weak antilocalization (WAL) effect of topological surface states in topological insulators is of tremendous importance. The major obstacle to achieve accurate results is how to eliminate the contribution of the anisotropic magnetoconductance of bulk states when the Fermi level lies in bulk bands. Here, we demonstrate that we can analyze quantitatively and accurately the WAL effect of topological surface states in topological insulator, BiSbTeSe₂ (BSTS), by measuring the anisotropic magnetoconductance. The anomalous conductance peaks induced by the WAL effect of topological surface states of BSTS together with the anisotropic magnetoconductance of bulk states have been observed. By subtracting the anisotropic magnetoconductance of bulk states, we are able to analyze the WAL effect of topological surface states using the Hikami-Larkin-Nagaoka expression. Our findings offer an alternative strategy for the quantitative exploration of the WAL effect of topological surface states in topological insulators.