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Assali S, Lähnemann J, Vu TTT, Jöns KD, Gagliano L, Verheijen MA, Akopian N, Bakkers EPAM, Haverkort JEM. Crystal Phase Quantum Well Emission with Digital Control. Nano Lett 2017; 17:6062-6068. [PMID: 28892396 PMCID: PMC5642001 DOI: 10.1021/acs.nanolett.7b02489] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/13/2017] [Revised: 09/06/2017] [Indexed: 05/31/2023]
Abstract
One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems.
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Affiliation(s)
- S. Assali
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB, Eindhoven, The Netherlands
| | - J. Lähnemann
- Paul-Drude-Institut
für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - T. T. T. Vu
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB, Eindhoven, The Netherlands
| | - K. D. Jöns
- Kavli
Institute of Nanoscience, Delft University
of Technology, 2600 GA, Delft, The Netherlands
| | - L. Gagliano
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB, Eindhoven, The Netherlands
| | - M. A. Verheijen
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB, Eindhoven, The Netherlands
- Philips
Innovation Services Eindhoven, High Tech Campus 11, 5656 AE, Eindhoven, The
Netherlands
| | - N. Akopian
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB, Eindhoven, The Netherlands
- Kavli
Institute of Nanoscience, Delft University
of Technology, 2600 GA, Delft, The Netherlands
| | - E. P. A. M. Bakkers
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB, Eindhoven, The Netherlands
- Kavli
Institute of Nanoscience, Delft University
of Technology, 2600 GA, Delft, The Netherlands
| | - J. E. M. Haverkort
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB, Eindhoven, The Netherlands
| |
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