Device Modeling of Organic Photovoltaic Cells with Traditional and Inverted Cells Using s-SWCNT:C60 as Active Layer

This research work presents a thorough analysis of Traditional Organic Solar Cell (TOSC) and novel designed Inverted OSC (IOSC) using Bulk Hetero-Junction (BHJ) structure. Herein, 2D photovoltaic device models were used to observe the results of the semiconducting Single Wall Carbon Nanotube (s-SWCNT):C₆₀-based organic photovoltaic. This work has improved the BHJ photodiodes by varying the active layer thickness. The analysis has been performed at various active layer thicknesses from 50 to 300 nm using the active material s-SWCNT:C₆₀. An analysis with various parameters to determine the most effective parameters for organic photovoltaic performance has been conducted. As a result, it has been established that IOSC has the maximum efficiency of 10.4%, which is higher than the efficiency of TOSC (9.5%). In addition, the active layer with the highest efficacy has been recorded using this material for both TOSC and IOSC Nano Photodiodes (NPDs). Furthermore, the diode structure and geometrical parameters have been optimized and compared to maximize the performance of photodiodes.

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n-n Diodes: The Road to Reliable Vertical MOSFETs

This work investigates p⁺n^-n GaN-on-Si vertical structures, through dedicated measurements and TCAD simulations, with the ultimate goal of identifying possible strategies for leakage and breakdown optimization. First, the dominant leakage processes were identified through temperature-dependent current-voltage characterization. Second, the breakdown voltage of the diodes was modelled through TCAD simulations based on the incomplete ionization of Mg in the p⁺ GaN layer. Finally, the developed simulation model was utilized to estimate the impact of varying the p-doping concentration on the design of breakdown voltage; while high p-doped structures are limited by the critical electric field at the interface, low p-doping designs need to contend with possible depletion of the entire p-GaN region and the consequent punch-through. A trade-off on the value of p-doping therefore exists to optimize the breakdown.

Discrepancy between Constant Properties Model and Temperature-Dependent Material Properties for Performance Estimation of Thermoelectric Generators

The efficiency of a thermoelectric (TE) generator for the conversion of thermal energy into electrical energy can be easily but roughly estimated using a constant properties model (CPM) developed by Ioffe. However, material properties are, in general, temperature (T)-dependent and the CPM yields meaningful estimates only if physically appropriate averages, i.e., spatial averages for thermal and electrical resistivities and the temperature average (TAv) for the Seebeck coefficient (α), are used. Even though the use of αTAv compensates for the absence of Thomson heat in the CPM in the overall heat balance, we find that the CPM still overestimates performance (e.g., by up to 6% for PbTe) for many materials. The deviation originates from an asymmetric distribution of internally released Joule heat to either side of the TE leg and the distribution of internally released Thomson heat between the hot and cold side. The Thomson heat distribution differs from a complete compensation of the corresponding Peltier heat balance in the CPM. Both effects are estimated quantitatively here, showing that both may reach the same order of magnitude, but which one dominates varies from case to case, depending on the specific temperature characteristics of the thermoelectric properties. The role of the Thomson heat distribution is illustrated by a discussion of the transport entropy flow based on the α(T) plot. The changes in the lateral distribution of the internal heat lead to a difference in the heat input, the optimum current and thus of the efficiency of the CPM compared to the real case, while the estimate of generated power at maximum efficiency remains less affected as it is bound to the deviation of the optimum current, which is mostly <1%. This deviation can be corrected to a large extent by estimating the lateral Thomson heat distribution and the asymmetry of the Joule heat distribution. A simple guiding rule for the former is found.

Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode

Resistive random access memories (RRAMs) are a type of resistive memory with two metal electrodes and a semi-insulating switching material in-between. As the persistent technology node downscaling continues in transistor technologies, RRAM designers also face similar device scaling challenges in simple cross-point arrays. For this reason, a cost-effective 3D vertical RRAM (VRRAM) structure which requires a single pivotal lithography step is attracting significant attention from both the scientific community and the industry. Integrating an extremely thin plane electrode to such a structure is a difficult but necessary step to enable high memory density. In addition, experimentally verifying and modeling such devices is an important step to designing RRAM arrays with a high noise margin, low resistive-capacitive (RC) delays, and stable switching characteristics. In this work, we conducted an electromagnetic analysis on a 3D vertical RRAM with atomically thin graphene electrodes and compared it with the conventional metal electrode. Based on the experimental device measurement results, we derived a theoretical basis and models for each VRRAM design that can be further utilized in the estimation of graphene-based 3D memory at the circuit and architecture levels. We concluded that a 71% increase in electromagnetic field strength was observed in a 0.3 nm thick graphene electrode when compared to a 5 nm thick metal electrode. Such an increase in the field led to much lower energy consumption and fluctuation range during RRAM switching. Due to unique graphene properties resulting in improved programming behavior, the graphene-based VRRAM can be a strong candidate for stacked storage devices in new memory computing platforms.

Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors

This work develops the first frequency-dependent small-signal model for graphene electrolyte-gated field-effect transistors (EGFETs). Graphene EGFETs are microfabricated to measure intrinsic voltage gain, frequency response, and to develop a frequency-dependent small-signal model. The transfer function of the graphene EGFET small-signal model is found to contain a unique pole due to a resistive element, which stems from electrolyte gating. Intrinsic voltage gain, cutoff frequency, and transition frequency for the microfabricated graphene EGFETs are approximately 3.1 V/V, 1.9 kHz, and 6.9 kHz, respectively. This work marks a critical step in the development of high-speed chemical and biological sensors using graphene EGFETs.

An Optically and Electrochemically Decoupled Monolithic Photoelectrochemical Cell for High-Performance Solar-Driven Water Splitting

Photoelectrochemical (PEC) cells have attracted much attention as a viable route for storing solar energy and producing value-added chemicals and fuels. However, the competition between light absorption and electrocatalysis at a restrained cocatalyst area on conventional planar-type photoelectrodes could limit their conversion efficiency. Here, we demonstrate a new monolithic photoelectrode architecture that eliminate the optical-electrochemical coupling by forming locally nanostructured cocatalysts on a photoelectrode. As a model study, Ni inverse opal (IO), an ordered three-dimensional porous nanostructure, was used as a surface-area-controlled electrocatalyst locally formed on Si photoanodes. The optical-electrochemical decoupling of our monolithic photoanodes significantly enhances the PEC performance for the oxygen evolution reaction (OER) by increasing light absorption and by providing more electrochemically active sites. Our Si photoanode with local Ni IOs maintains an identical photolimiting current density but reduces the overpotential by about 120 mV compared to a Si photoanode with planar Ni cocatalysts with the same footprint under 1 sun illumination. Finally, a highly efficient Si photoanode with an onset potential of 0.94 V vs reversible hydrogen electrode (RHE) and a photocurrent density of 31.2 mA/cm² at 1.23 V vs RHE in 1 M KOH under 1 sun illumination is achieved with local NiFe alloy IOs.

Association between hemodynamic modifications and clinical outcome of intracranial aneurysms treated using flow diverters

Treatment of intracranial aneurysms (IAs) has been revolutionized by the advent of endovascular Flow Diverters (FDs), which disrupt blood flow within the aneurysm to induce pro-thrombotic conditions, and serves as a scaffold for endothelial ingrowth and arterial remodeling. Despite good clinical success of FDs, complications like incomplete occlusion and post-treatment rupture leading to subarachnoid hemorrhage have been reported. In silico computational fluid dynamic analysis of the pre- and post-treated geometries of IA patients can shed light on the contrasting blood hemodynamics associated with different clinical outcomes. In this study, we analyzed hemodynamic modifications in 15 IA patients treated using a single FD; 10 IAs were completely occluded (successful) and 5 were partially occluded (unsuccessful) at 12-month follow-up. An in-house virtual stenting workflow was used to recapitulate the clinical intervention on these cases, followed by CFD to obtain pre- and post-treatment hemodynamics. Bulk hemodynamic parameters showed comparable reductions in both groups with average inflow rate and aneurysmal velocity reduction of 40.3% and 52.4% in successful cases, and 34.4% and 49.2% in unsuccessful cases. There was a substantial reduction in localized parameter like vortex coreline length and Energy Loss for successful cases, 38.2% and 42.9% compared to 10.1% and 10.5% for unsuccessful cases. This suggest that for successfully treated IAs, the localized complex blood flow is disrupted more prominently by the FD as compared to unsuccessful cases. These localized hemodynamic parameters can be potentially used in prediction of treatment outcome, thus aiding the clinicians in a priori assessment of different treatment strategies.

Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency.