Application of electrodeposited Cu-metal nanoflake structures as 3D current collector in lithium-metal batteries

Since uncontrolled lithium (Li) dendrite growth and dendrite-induced dead Li severely limit the development of Li metal batteries, 3D Cu current collectors can effectively alleviate these problems during Li plating/stripping. Herein, one-step galvanostatic electrodeposition method is employed to fabricate a new current collector on Cu foam decorated with large-scale and uniform 3D porous Cu-based nanoflake (NF) structures (abbreviated as 3D Cu NF@Cu foam). This 3D structure with large internal surface areas not only generates lithophilic surface copper oxides and hydroxides as charge centers and nucleation sites for Li insertion/extraction, but also endows abundant space with interlinked NFs for buffering the cell volume expansion and increasing battery performance. As a result, Li-deposited 3D Cu NF@Cu foam current collector can realize stable cycling over 455 cycles with an average Coulombic efficiency of 98.8% at a current density of 1.0 mA cm^-2, as well as a prolonged lifespan of >380 cycles in symmetrical cell without short-circuit, which are superior to those of blank Cu foam current collector. This work realizes Li metal anode stabilization by constructing 3D porous Cu NFs current collectors, which can advance the development of Li metal anode for battery industries.

Galvanostatically Deposited PtNi Thin-Films as Electrocatalysts for the Hydrogen Evolution Reaction

The synthesis of hybrid platinum materials is fundamental to enable alkaline water electrolysis for cost-effective H2 generation. In this work, we have used a galvanostatic method to co-deposit PtNi films onto polycrystalline gold. The surface concentrations of Ni (ΓNi ) and Pt (ΓPt ) were calculated from electrochemical measurements; the ΓPt /ΓNi ratio and electrocatalytic activity of these materials towards hydrogen evolution reaction (HER) in 1 M KOH show a strong dependence on the current density pulse applied during the electrodeposition. Analysis of the Tafel parameters hints that, on these deposits, HER proceeds through a Volmer-Heyrovsky mechanism. The galvanostatically deposited PtNi layers present a high current output per Pt gram, 3199 A gPt -1 , which is significantly larger compared to other PtNi-based materials obtained by more extended and more complex synthesis methods.

Optimal Blending of PbSe and CdSe in Polycrystalline PbCdSe Nanocomposite Film: Improved Carrier Multiplication and Enhanced Photoconversion Efficiency

The present work reports galvanostatic electro-co-deposition of n-PbCdSe semiconductor (SC) films on FTO substrate from the respective precursors. Self-designed matrices were formulated at variable concentrations of Pb²⁺ in the deposition medium. The semiconductor films constitute an intermixed structure of close-packed PbSe and CdSe nanoparticles (NPs), and the band gap (E_g) was effectively tuned in the range 0.99-1.47 eV for the variable compositions. Energy dispersive spectroscopy studies revealed that Cd exists in low level in the film matrix compared to Pb, presumably due to competitive deposition kinetics of the two chalcogenide compounds and the crystallite sizes determined from XRD studies, ranges between 15 and 12 nm, which corresponds to the size quenching of SC-NPs with increased Pb²⁺ concentration. The durability studies identify the most stable film developed at 0.025 M Pb²⁺ concentration. PbSe materials are typically characterized with impact ionization which effectively induces carrier multiplication (CM) in the quasi Type-II PbCdSe composite, exhibiting reasonably high photoconversion efficiency (PCE) of 6.14% with current output of 19.2 mA cm^-2 for the optimal PbCdSe film.