Unconventional Charge-Density-Wave Gap in Monolayer NbS2

Using scanning tunneling microscopy and spectroscopy, for a monolayer of transition metal dichalcogenide H-NbS2 grown by molecular beam epitaxy on graphene, we provide unambiguous evidence for a charge density wave (CDW) with a 3 × 3 superstructure, which is not present in bulk NbS2. Local spectroscopy displays a pronounced gap on the order of 20 meV at the Fermi level. Within the gap, low-energy features are present. The gap structure with its low-energy features is at variance with the expectation for a gap opening in the electronic band structure due to a CDW. Instead, comparison with ab initio calculations indicates that the observed gap structure must be attributed to combined electron-phonon quasiparticles. The phonons in question are the elusive amplitude and phase collective modes of the CDW transition. Our findings advance the understanding of CDW mechanisms in 2D materials and their spectroscopic signatures.

Vanadium Intercalation into Niobium Disulfide to Enhance the Catalytic Activity for Lithium-Sulfur Batteries

Despite their high specific energy and great promise for next-generation energy storage, lithium-sulfur (Li-S) batteries suffer from polysulfide shuttling, slow redox kinetics, and poor cyclability. Catalysts are needed to accelerate polysulfide conversion and suppress the shuttling effect. However, a lack of structure-activity relationships hinders the rational development of efficient catalysts. Herein, we studied the Nb-V-S system and proposed a V-intercalated NbS₂ (Nb₃VS₆) catalyst for high-efficiency Li-S batteries. Structural analysis and modeling revealed that undercoordinated sulfur anions of [VS₆] octahedra on the surface of Nb₃VS₆ may break the catalytic inertness of the basal planes, which are usually the primary exposed surfaces of many 2D layered disulfides. Using Nb₃VS₆ as the catalyst, the resultant Li-S batteries delivered high capacities of 1541 mAh g^-1 at 0.1 C and 1037 mAh g^-1 at 2 C and could retain 73.2% of the initial capacity after 1000 cycles. Such an intercalation-induced high activity offers an alternative approach to building better Li-S catalysts.

Functionalized Metallic 2D Transition Metal Dichalcogenide-Based Solid-State Electrolyte for Flexible All-Solid-State Supercapacitors

Highly efficient and durable flexible solid-state supercapacitors (FSSSCs) are emerging as low-cost devices for portable and wearable electronics due to the elimination of leakage of toxic/corrosive liquid electrolytes and their capability to withstand elevated mechanical stresses. Nevertheless, the spread of FSSSCs requires the development of durable and highly conductive solid-state electrolytes, whose electrochemical characteristics must be competitive with those of traditional liquid electrolytes. Here, we propose an innovative composite solid-state electrolyte prepared by incorporating metallic two-dimensional group-5 transition metal dichalcogenides, namely, liquid-phase exfoliated functionalized niobium disulfide (f-NbS₂) nanoflakes, into a sulfonated poly(ether ether ketone) (SPEEK) polymeric matrix. The terminal sulfonate groups in f-NbS₂ nanoflakes interact with the sulfonic acid groups of SPEEK by forming a robust hydrogen bonding network. Consequently, the composite solid-state electrolyte is mechanically/dimensionally stable even at a degree of sulfonation of SPEEK as high as 70.2%. At this degree of sulfonation, the mechanical strength is 38.3 MPa, and thanks to an efficient proton transport through the Grotthuss mechanism, the proton conductivity is as high as 94.4 mS cm^-1 at room temperature. To elucidate the importance of the interaction between the electrode materials (including active materials and binders) and the solid-state electrolyte, solid-state supercapacitors were produced using SPEEK and poly(vinylidene fluoride) as proton conducting and nonconducting binders, respectively. The use of our solid-state electrolyte in combination with proton-conducting SPEEK binder and carbonaceous electrode materials (mixture of activated carbon, single/few-layer graphene, and carbon black) results in a solid-state supercapacitor with a specific capacitance of 116 F g^-1 at 0.02 A g^-1, optimal rate capability (76 F g^-1 at 10 A g^-1), and electrochemical stability during galvanostatic charge/discharge cycling and folding/bending stresses.

Superconducting 2D NbS2 Grown Epitaxially by Chemical Vapor Deposition

Metallic two-dimensional (2D) transition metal dichalcogenides (TMDCs) are attracting great attention because of their interesting low-temperature properties such as superconductivity, magnetism, and charge density waves (CDW). However, further studies and practical applications are being slowed down by difficulties in synthesizing high-quality materials with a large grain size and well-determined thickness. In this work, we demonstrate epitaxial chemical vapor deposition (CVD) growth of 2D NbS₂ crystals on a sapphire substrate, with a thickness-dependent structural phase transition. NbS₂ crystals are epitaxially aligned by the underlying c-plane sapphire resulting in high-quality growth. The thickness of NbS₂ is well controlled by growth parameters to be between 1.5 and 10 nm with a large grain size of up to 500 μm. As the thickness increases, we observe in our NbS₂ a transition from a metallic 3R-polytype to a superconducting 2H-polytype, confirmed by Raman spectroscopy, aberration-corrected scanning transmission electron microscopy (STEM) and electrical transport measurements. A Berezinskii-Kosterlitz-Thouless (BKT) superconducting transition occurs in the CVD-grown 2H-phase NbS₂ below the transition temperature (T_c) of 3 K. Our work demonstrates thickness and phase-controllable synthesis of high-quality superconducting 2D NbS₂, which is imperative for its practical applications in next-generation TMDC-based electrical devices.

Conformal Growth of Nanometer-Thick Transition Metal Dichalcogenide TiS x -NbS x Heterostructures over 3D Substrates by Atomic Layer Deposition: Implications for Device Fabrication

The scalable and conformal synthesis of two-dimensional (2D) transition metal dichalcogenide (TMDC) heterostructures is a persisting challenge for their implementation in next-generation devices. In this work, we report the synthesis of nanometer-thick 2D TMDC heterostructures consisting of TiS x -NbS x on both planar and 3D structures using atomic layer deposition (ALD) at low temperatures (200-300 °C). To this end, a process was developed for the growth of 2D NbS x by thermal ALD using (tert-butylimido)-tris-(diethylamino)-niobium (TBTDEN) and H2S gas. This process complemented the TiS x thermal ALD process for the growth of 2D TiS x -NbS x heterostructures. Precise thickness control of the individual TMDC material layers was demonstrated by fabricating multilayer (5-layer) TiS x -NbS x heterostructures with independently varied layer thicknesses. The heterostructures were successfully deposited on large-area planar substrates as well as over a 3D nanowire array for demonstrating the scalability and conformality of the heterostructure growth process. The current study demonstrates the advantages of ALD for the scalable synthesis of 2D heterostructures conformally over a 3D substrate with precise thickness control of the individual material layers at low temperatures. This makes the application of 2D TMDC heterostructures for nanoelectronics promising in both BEOL and FEOL containing high-aspect-ratio 3D structures.

Bifunctional NbS2-Based Asymmetric Heterostructure for Lateral and Vertical Electronic Devices

Structural asymmetry of materials plays a crucial role in developing multipurpose devices. Layered metallic transition metal dichalcogenides (MTMDCs) have been proposed as promising materials in electronics. However, they are still subject to native surface oxidation, limiting their practical applications. Combination of surface protection and native surface oxidation of MTMDCs will create asymmetric structures for devices but has yet to be explored. Here, we report a bifunctional NbS₂-based vertical heterostructure derived from epitaxially grown NbS₂ on MoS₂ followed by a natural oxidation (MoS₂-NbS₂-NbO_x), which simultaneously exhibits both high-efficiency tunneling conductive and memristive surfaces. With the tunneling conductive surface, the heterostructure functions as nearly ohmic contact electrodes with a two-dimensional (2D) channel in lateral transistors, delivering an enhanced mobility ∼140 times higher than that of the exfoliated NbS₂-contacted device. With the memristive surface, the heterostructure can be used to build high-performance lateral or vertical memristors with low working voltages and synaptic functions. By combining both types of surfaces, a memristor array for nonvolatile memory is further developed. Moreover, the memristors show a good endurance for 2000 cycles of bending as flexible devices. The bifunctional heterostructure based on NbS₂ offers a strategy toward the future applications of layered metallic materials.

Two-Dimensional NbS2 Gas Sensors for Selective and Reversible NO2 Detection at Room Temperature

Transition metal dichalcogenides (TMDs) have attracted enormous attention in diverse research fields. Especially, gas sensors are considered in a promising application exploiting TMDs. However, the studies are confined to only major TMDs such as MoS₂ and WS₂. Particularly, the chemoresistive sensing properties of two-dimensional (2D) NbS₂ have never been explored. For the first time, we report room temperature NO₂ sensing characteristics of 2D NbS₂ nanosheets and the sensing mechanisms using first-principles calculations based on density functional theory. The results demonstrate that the NbS₂ edges possessing different configurations depending on synthetic conditions differ in the sensing ability of the TMD nanosheets. This study not only broadens the potential of 2D NbS₂ for gas sensing applications, but also presents the important role of edge configuration of TMDs depending on synthetic conditions for further studies.

Plasmon-Free Surface-Enhanced Raman Spectroscopy Using Metallic 2D Materials

Two dimensional (2D) materials-based plasmon-free surface-enhanced Raman scattering (SERS) is an emerging field in nondestructive analysis. However, impeded by the low density of state (DOS), an inferior detection sensitivity is frequently encountered due to the low enhancement factor of most 2D materials. Metallic transition-metal dichalcogenides (TMDs) could be ideal plasmon-free SERS substrates because of their abundant DOS near the Fermi level. However, the absence of controllable synthesis of metallic 2D TMDs has hindered their study as SERS substrates. Here, we realize controllable synthesis of ultrathin metallic 2D niobium disulfide (NbS₂) (<2.5 nm) with large domain size (>160 μm). We have explored the SERS performance of as-obtained NbS₂, which shows a detection limit down to 10^-14 mol·L^-1. The enhancement mechanism was studied in depth by density functional theory, which suggested a strong correlation between the SERS performance and DOS near the Fermi level. NbS₂ features the most abundant DOS and strongest binding energy with probe molecules as compared with other 2D materials such as graphene, 1T-phase MoS₂, and 2H-phase MoS₂. The large DOS increases the intermolecular charge transfer probability and thus induces prominent Raman enhancement. To extend the results to practical applications, the resulting NbS₂-based plasmon-free SERS substrates were applied for distinguishing different types of red wines.