Minimizing Interfacial Recombination in 1.8 eV Triple-Halide Perovskites for 27.5% Efficient All-Perovskite Tandems

All-perovskite tandem solar cells show great potential to enable the highest performance at reasonable costs for a viable market entry in the near future. In particular, wide-bandgap (WBG) perovskites with higher open-circuit voltage (VOC ) are essential to further improve the tandem solar cells' performance. Here, a new 1.8 eV bandgap triple-halide perovskite composition in conjunction with a piperazinium iodide (PI) surface treatment is developed. With structural analysis, it is found that the PI modifies the surface through a reduction of excess lead iodide in the perovskite and additionally penetrates the bulk. Constant light-induced magneto-transport measurements are applied to separately resolve charge carrier properties of electrons and holes. These measurements reveal a reduced deep trap state density, and improved steady-state carrier lifetime (factor 2.6) and diffusion lengths (factor 1.6). As a result, WBG PSCs achieve 1.36 V VOC , reaching 90% of the radiative limit. Combined with a 1.26 eV narrow bandgap (NBG) perovskite with a rubidium iodide additive, this enables a tandem cell with a certified scan efficiency of 27.5%.

Highly Efficient Indoor Organic Solar Cells by Voltage Loss Minimization through Fine-Tuning of Polymer Structures

Herein, we report a detailed study on the optoelectronic properties, photovoltaic performance, structural conformation, morphology variation, charge carrier mobility, and recombination dynamics in bulk heterojunction solar cells comprising a series of donor-acceptor conjugated polymers as electron donors based on benzodithiophene (BDT) and 5,8-bis(5-bromothiophen-2-yl)-6,7-difluoro-2,3-bis(3-(octyloxy)phenyl)quinoxaline as a function of the BDT's thienyl substitution (alkyl (WF3), alkylthio (WF3S), and fluoro (WF3F)). The synergistic positive effects of the fluorine substituents on the minimization of the bimolecular recombination losses, the reduction of the series resistances (R_S), the increment of the shunt resistances (R_Sh), the suppression of the trap-assisted recombination losses, the balanced charge transport, the finer nanoscale morphology, and the deeper highest occupied molecular orbital (E_HOMO) are manifested versus the alkyl and alkylthio substituents. According to these findings, the WF3F:[6,6]-phenyl-C₇₁-butyric acid methyl ester (PC₇₁BM)-based organic photovoltaic device is a rare example that features a high power conversion efficiency (PCE) of 17.34% under 500 lx indoor light-emitting diode light source with a high open-circuit voltage (V_OC) of 0.69 V, due to the suppression of the voltage losses, and a PCE of 9.44% at 1 sun (100 mW/cm²) conditions, simultaneously.

Suppressing the Surface Recombination and Tuning the Open-Circuit Voltage of Polymer/Fullerene Solar Cells by Implementing an Aggregative Ternary Compound

In this work, we present a novel small molecule based on dithienylthienothiadiazole units (named SM1) acting as an efficient component in ternary blend organic solar cells to modify the hole extraction at the interface. Our findings show that the SM1 suppresses the surface recombination and enhances the open-circuit voltage ( V_oc). By introducing SM1 in a host system composed of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl- C₆₁-butyric acid methyl ester (PCBM), we obtained V_oc values of up to 0.75 V and fill factors larger than 70% for the ternary blends. As a consequence, the power conversion efficiency is improved by about 30% compared to P3HT:PCBM binary devices. Interestingly, external quantum efficiency and absorption spectra in the near-infrared region do not show any contribution of SM1 in dried films. Instead, the addition of the small molecule improves the V_oc by reducing the surface recombination losses. To shed light on the recombination processes, we carried out Fourier-transform photocurrent spectroscopy and impedance spectroscopy measurements. This work shows that the ternary concept can also have functionalities other than photosensitization and can even act as a morphology-directing agent or an interface modifier.

Single Molecular Precursor Solution for CuIn(S,Se)2 Thin Films Photovoltaic Cells: Structure and Device Characteristics

A single molecular precursor solution is described for the deposition of CuIn(S,Se)₂ (CIS) film onto Mo-coated glass substrates by spin coating, followed by annealing in Se atmosphere. Characterization of the films by X-ray diffraction, Raman spectroscopy and scanning electron microscopy demonstrates the formation of a highly homogeneous and compact 1.1 μm thick CIS layer, with a MoSe₂ under-layer. Atomic force microscopy reveals the presence of spherical grains between 400 and 450 nm, featuring surface corrugation in the range of 30 nm. Film composition is found to be in close agreement with that of the precursor solution. Diffuse reflectance spectroscopy shows a direct band gap (E_g) of 1.36 eV. Intensity and temperature dependence photoluminescence spectra show characteristic features associated with a donor-acceptor pair recombination mechanism, featuring activation energy of 34 meV. Over 85 solar cell devices with the configuration Mo/CIS/CdS/i-ZnO/Al:ZnO/Ni-Al and an total area of 0.5 cm² were fabricated and tested. The champion cell shows a power efficiency of 3.4% with an open circuit voltage of 521 mV and short circuit current of 14 mA/cm² under AM 1.5 illumination and an external quantum efficiency above 60%. Overall variation in each of solar cell parameters remains below 10% of the average value, demonstrating the remarkable homogeneity of this solution processing method. To understand the limitation of devices, the dependence of the open-circuit voltage and impedance spectra upon temperature were analyzed. The data reveal that the CuIn(S,Se)₂/CdS interface is the main recombination pathway with an activation energy of 0.79 eV as well as the presence of two "bulk" defect states with activation energies of 37 and 122 meV. We also estimated that the MoSe₂ under-layer generates back contact barrier of 195 meV.