Heterodimensional superlattice with in-plane anomalous Hall effect

Superlattices-a periodic stacking of two-dimensional layers of two or more materials-provide a versatile scheme for engineering materials with tailored properties1,2. Here we report an intrinsic heterodimensional superlattice consisting of alternating layers of two-dimensional vanadium disulfide (VS2) and a one-dimensional vanadium sulfide (VS) chain array, deposited directly by chemical vapour deposition. This unique superlattice features an unconventional 1T stacking with a monoclinic unit cell of VS2/VS layers identified by scanning transmission electron microscopy. An unexpected Hall effect, persisting up to 380 kelvin, is observed when the magnetic field is in-plane, a condition under which the Hall effect usually vanishes. The observation of this effect is supported by theoretical calculations, and can be attributed to an unconventional anomalous Hall effect owing to an out-of-plane Berry curvature induced by an in-plane magnetic field, which is related to the one-dimensional VS chain. Our work expands the conventional understanding of superlattices and will stimulate the synthesis of more extraordinary superstructures.

Obstructed Surface States as the Descriptor for Predicting Catalytic Active Sites in Inorganic Crystalline Materials

The discovery of new catalysts that are efficient and sustainable is a major research endeavor for many industrial chemical processes. This requires an understanding and determination of the catalytic origins, which remains a challenge. Here, a novel method to identify the position of active sites based on searching for crystalline symmetry-protected obstructed atomic insulators (OAIs) that have metallic surface states is described. The obstructed Wannier charge centers (OWCCs) in OAIs are pinned by symmetries at some empty Wyckoff positions so that surfaces that accommodate these sites are guaranteed to have metallic obstructed surface states (OSSs). It is proposed and confirmed that the OSSs are the catalytic activity origins for crystalline materials. The theory on 2H-MoTe₂ , 1T'-MoTe₂ , and NiPS₃ bulk single crystals is verified, whose active sites are consistent with the calculations. Most importantly, several high-efficiency catalysts are successfully identified just by considering the number of OWCCs and the symmetry. Using the real-space-invariant theory applied to a database of 34 013 topologically trivial insulators, 1788 unique OAIs are identified, of which 465 are potential high-performance catalysts. The new methodology will facilitate and accelerate the discovery of new catalysts for a wide range of heterogeneous redox reactions.

Setting of the magnetic structure of chiral kagome antiferromagnets by a seeded spin-orbit torque

The current-induced spin-orbit torque switching of ferromagnets has had huge impact in spintronics. However, short spin-diffusion lengths limit the thickness of switchable ferromagnetic layers, thereby limiting their thermal stability. Here, we report a previously unobserved seeded spin-orbit torque (SSOT) by which current can set the magnetic states of even thick layers of the chiral kagome antiferromagnet Mn₃Sn. The mechanism involves setting the orientation of the antiferromagnetic domains in a thin region at the interface with spin currents arising from an adjacent heavy metal while also heating the layer above its magnetic ordering temperature. This interface region seeds the resulting spin texture of the entire layer as it cools down and, thereby, overcomes the thickness limitation of conventional spin-orbit torques. SSOT switching in Mn₃Sn can be extended beyond chiral antiferromagnets to diverse magnetic systems and provides a path toward the development of highly efficient, high-speed, and thermally stable spintronic devices.

Giant Spin Hall Effect and Spin-Orbit Torques in 5d Transition Metal-Aluminum Alloys from Extrinsic Scattering

The generation of spin currents from charge currents via the spin Hall effect (SHE) is of fundamental and technological interest. Here, some of the largest SHEs yet observed via extrinsic scattering are found in a large class of binary compounds formed from a 5d element and aluminum, with a giant spin Hall angle (SHA) of ≈1 in the compound Os₂₂ Al₇₈ . A critical composition of the 5d element is found at which there is a structural phase boundary between poorly and highly textured crystalline material, where the SHA exhibits its largest value. Furthermore, a systematic increase is found in the spin Hall conductivity (SHC) and SHA at this critical composition as the atomic number of the 5d element is systematically increased. This clearly shows that the SHE and SHC are derived from extrinsic scattering mechanisms related to the potential mismatch between the 5d element and Al. These studies show the importance of extrinsic mechanisms derived from potential mismatch as a route to obtaining large spin Hall angles with high technological impact. Indeed, it is demonstrated that a state-of-the-art racetrack device has a several-fold increased current-induced domain wall efficiency using these materials as compared to prior-art materials.

All topological bands of all nonmagnetic stoichiometric materials

Topological quantum chemistry and symmetry-based indicators have facilitated large-scale searches for materials with topological properties at the Fermi energy (E_F). We report the implementation of a publicly accessible catalog of stable and fragile topology in all of the bands both at and away from E_F in the 96,196 processable entries in the Inorganic Crystal Structure Database. Our calculations, which represent the completion of the symmetry-indicated band topology of known nonmagnetic materials, have enabled the discovery of repeat-topological and supertopological materials, including rhombohedral bismuth and Bi₂Mg₃. We find that 52.65% of all materials are topological at E_F, roughly two-thirds of bands across all materials exhibit symmetry-indicated stable topology, and 87.99% of all materials contain at least one stable or fragile topological band.

Atomic Scale Control of Spin Current Transmission at Interfaces

Ferromagnet/heavy metal bilayers represent a central building block for spintronic devices where the magnetization of the ferromagnet can be controlled by spin currents generated in the heavy metal. The efficiency of spin current generation is paramount. Equally important is the efficient transfer of this spin current across the ferromagnet/heavy metal interface. Here, we show theoretically and experimentally that for Ta as heavy metal the interface only partially transmits the spin current while this effect is absent when Pt is used as heavy metal. This is due to magnetic moment reduction at the interface caused by 3d-5d hybridization effects. We show that this effect can be avoided by atomically thin interlayers. On the basis of our theoretical model we conclude that this is a general effect and occurs for all 5d metals with less than half-filled 5d shell.

Fermi surface chirality induced in a TaSe2 monosheet formed by a Ta/Bi2Se3 interface reaction

Spin-momentum locking in topological insulators and materials with Rashba-type interactions is an extremely attractive feature for novel spintronic devices and is therefore under intense investigation. Significant efforts are underway to identify new material systems with spin-momentum locking, but also to create heterostructures with new spintronic functionalities. In the present study we address both subjects and investigate a van der Waals-type heterostructure consisting of the topological insulator Bi₂Se₃ and a single Se-Ta-Se triple-layer (TL) of H-type TaSe₂ grown by a method which exploits an interface reaction between the adsorbed metal and selenium. We then show, using surface x-ray diffraction, that the symmetry of the TaSe₂-like TL is reduced from D_3h to C_3v resulting from a vertical atomic shift of the tantalum atom. Spin- and momentum-resolved photoemission indicates that, owing to the symmetry lowering, the states at the Fermi surface acquire an in-plane spin component forming a surface contour with a helical Rashba-like spin texture, which is coupled to the Dirac cone of the substrate. Our approach provides a route to realize chiral two-dimensional electron systems via interface engineering in van der Waals epitaxy that do not exist in the corresponding bulk materials.

Current limitations of spintronics devices based on bulk topological materials stimulate the search for new materials and structures with interesting spin properties. Here the authors report a chiral spin texture around the Fermi level related to structural symmetry breaking in a TaSe₂ layer grown on a Bi2Se3 surface.

Observation of fractional spin textures in a Heusler material

Recently a zoology of non-collinear chiral spin textures has been discovered, most of which, such as skyrmions and antiskyrmions, have integer topological charges. Here we report the experimental real-space observation of the formation and stability of fractional antiskyrmions and fractional elliptical skyrmions in a Heusler material. These fractional objects appear, over a wide range of temperature and magnetic field, at the edges of a sample, whose interior is occupied by an array of nano-objects with integer topological charges, in agreement with our simulations. We explore the evolution of these objects in the presence of magnetic fields and show their interconversion to objects with integer topological charges. This means the topological charge can be varied continuously. These fractional spin textures are not just another type of skyrmion, but are essentially a new state of matter that emerges and lives only at the boundary of a magnetic system. The coexistence of both integer and fractionally charged spin textures in the same material makes the Heusler family of compounds unique for the manipulation of the real-space topology of spin textures and thus an exciting platform for spintronic and magnonic applications.

Skyrmions and anti-skyrmions are magnetic textures that have garnered much interest due to their stability. Here, Jena et al demonstrate the existence of fractional spin textures at the edges of Heusler alloy sample, which can have continuous variable topological charges.

Control of Oxygen Vacancy Ordering in Brownmillerite Thin Films via Ionic Liquid Gating

Oxygen defects and their atomic arrangements play a significant role in the physical properties of many transition metal oxides. The exemplary perovskite SrCoO_3-δ (P-SCO) is metallic and ferromagnetic. However, its daughter phase, the brownmillerite SrCoO_2.5 (BM-SCO), is insulating and an antiferromagnet. Moreover, BM-SCO exhibits oxygen vacancy channels (OVCs) that in thin films can be oriented either horizontally (H-SCO) or vertically (V-SCO) to the film's surface. To date, the orientation of these OVCs has been manipulated by control of the thin film deposition parameters or by using a substrate-induced strain. Here, we present a method to electrically control the OVC ordering in thin layers via ionic liquid gating (ILG). We show that H-SCO (antiferromagnetic insulator, AFI) can be converted to P-SCO (ferromagnetic metal, FM) and subsequently to V-SCO (AFI) by the insertion and subtraction of oxygen throughout thick films via ILG. Moreover, these processes are independent of substrate-induced strain which favors formation of H-SCO in the as-deposited film. The electric-field control of the OVC channels is a path toward the creation of oxitronic devices.

Enhanced thin film analysis via High Resolution RBS using the NEC CARBS system

Advancements in thin film deposition techniques can now produce films of only a few monolayers in thicknesses, with multiple applications emerging in the nano technology field. This maturing manufacturing technique is driving the need for diagnostics tools able to accurately measure depth profiles. To meet this need, the Compact Automated Rutherford Back-Scattering (CARBS) system is under development at National Electrostatics Corp. (NEC) for nanometer thin film analysis using High-resolution RBS (HRBS) within a 4 x 4meter footprint. We present the recent development of the system and demonstrate a study of HRBS applied to a 30nm CoAl alloy film. We compare the performance of the CARBS system with the conventional NEC HRBS end station and discuss the advantages of HRBS over SIMS method.

Ultrafast Sub-100 fs All-Optical Modulation and Efficient Third-Harmonic Generation in Weyl Semimetal Niobium Phosphide Thin Films

Since their experimental discovery in 2015, Weyl semimetals have generated a large amount of attention due their intriguing physical properties that arise from their linear electron dispersion relation and topological surface states. In particular, in the field of nonlinear (NL) optics and light harvesting, Weyl semimetals have shown outstanding performances and achieved record NL conversion coefficients. In this context, the first steps toward Weyl semimetal nanophotonics are performed here by thoroughly characterizing the linear and NL optical behavior of epitaxially grown niobium phosphide (NbP) thin films, covering the visible to the near-infrared regime of the electromagnetic spectrum. Despite the measured high linear absorption, third-harmonic generation studies demonstrate high conversion efficiencies up to 10^-4 % that can be attributed to the topological electron states at the surface of the material. Furthermore, nondegenerate pump-probe measurements with sub-10 fs pulses reveal a maximum modulation depth of ≈1%, completely decaying within 100 fs and therefore suggesting the possibility of developing all-optical switching devices based on NbP. Altogether, this work reveals the promising NL optical properties of Weyl semimetal thin films, which outperform bulk crystals of the same material, laying the grounds for nanoscale applications, enabled by top-down nanostructuring, such as light-harvesting, on-chip frequency conversion, and all-optical processing.

Magnetic Skyrmions in a Thickness Tunable 2D Ferromagnet from a Defect Driven Dzyaloshinskii-Moriya Interaction

There is considerable interest in van der Waals (vdW) materials as potential hosts for chiral skyrmionic spin textures. Of particular interest is the ferromagnetic, metallic compound Fe₃ GeTe₂ (FGT), which has a comparatively high Curie temperature (150-220 K). Several recent studies have reported the observation of chiral Néel skyrmions in this compound, which is inconsistent with its presumed centrosymmetric structure. Here the observation of Néel type skyrmions in single crystals of FGT via Lorentz transmission electron microscopy (LTEM) is reported. It is shown from detailed X-ray diffraction structure analysis that FGT lacks an inversion symmetry as a result of an asymmetric distribution of Fe vacancies. This vacancy-induced breaking of the inversion symmetry of this compound is a surprising and novel observation and is a prerequisite for a Dzyaloshinskii-Moriya vector exchange interaction which accounts for the chiral Néel skyrmion phase. This phenomenon is likely to be common to many 2D vdW materials and suggests a path to the preparation of many such acentric compounds. Furthermore, it is found that the skyrmion size in FGT is strongly dependent on its thickness: the skyrmion size increases from ≈100 to ≈750 nm as the thickness of the lamella is increased from ≈90 nm to ≈2 µm. This extreme size tunability is a feature common to many low symmetry ferro- and ferri-magnetic compounds.

Heusler-based synthetic antiferrimagnets

Antiferromagnet spintronic devices eliminate or mitigate long-range dipolar fields, thereby promising ultrafast operation. For spin transport electronics, one of the most successful strategies is the creation of metallic synthetic antiferromagnets, which, to date, have largely been formed from transition metals and their alloys. Here, we show that synthetic antiferrimagnetic sandwiches can be formed using exchange coupling spacer layers composed of atomically ordered RuAl layers and ultrathin, perpendicularly magnetized, tetragonal ferrimagnetic Heusler layers. Chemically ordered RuAl layers can both be grown on top of a Heusler layer and allow for the growth of ordered Heusler layers deposited on top of it that are as thin as one unit cell. The RuAl spacer layer gives rise to a thickness-dependent oscillatory interlayer coupling with an oscillation period of ~1.1 nm. The observation of ultrathin ordered synthetic antiferrimagnets substantially expands the family of synthetic antiferromagnets and magnetic compounds for spintronic technologies.

Anomalous excitations of atomically crafted quantum magnets

High-energy resolution spectroscopic studies of quantum magnets proved extremely valuable in accessing magnetodynamics quantities, such as energy barriers, magnetic interactions, and lifetime of excited states. Here, we investigate a previously unexplored flavor of low-energy spin excitations for quantum spins coupled to an electron bath. In sharp contrast to the usual tunneling signature of two steps symmetrically centered around the Fermi level, we find a single step in the conductance. Combining time-dependent and many-body perturbation theories, magnetic field-dependent tunneling spectra are explained as the result of an interplay between weak magnetic anisotropy energy, magnetic interactions, and Stoner-like electron-hole excitations that are strongly dependent on the magnetic states of the nanostructures. The results are rationalized in terms of a noncollinear magnetic ground state and the dominance of ferro- and antiferromagnetic interactions. The atomically crafted nanomagnets offer an appealing model for the exploration of electrically pumped spin systems.

Josephson diode effect from Cooper pair momentum in a topological semimetal

Cooper pairs in non-centrosymmetric superconductors can acquire finite centre-of-mass momentum in the presence of an external magnetic field. Recent theory predicts that such finite-momentum pairing can lead to an asymmetric critical current, where a dissipationless supercurrent can flow along one direction but not in the opposite one. Here we report the discovery of a giant Josephson diode effect in Josephson junctions formed from a type-II Dirac semimetal, NiTe₂. A distinguishing feature is that the asymmetry in the critical current depends sensitively on the magnitude and direction of an applied magnetic field and achieves its maximum value when the magnetic field is perpendicular to the current and is of the order of just 10 mT. Moreover, the asymmetry changes sign several times with an increasing field. These characteristic features are accounted for by a model based on finite-momentum Cooper pairing that largely originates from the Zeeman shift of spin-helical topological surface states. The finite pairing momentum is further established, and its value determined, from the evolution of the interference pattern under an in-plane magnetic field. The observed giant magnitude of the asymmetry in critical current and the clear exposition of its underlying mechanism paves the way to build novel superconducting computing devices using the Josephson diode effect.

Long range and highly tunable interaction between local spins coupled to a superconducting condensate

Interfacing magnetism with superconducting condensates is rapidly emerging as a viable route for the development of innovative quantum technologies. In this context, the development of rational design strategies to controllably tune the interaction between magnetic moments is crucial. Here we address this problem demonstrating the possibility of tuning the interaction between local spins coupled through a superconducting condensate with atomic scale precision. By using Cr atoms coupled to superconducting Nb, we use atomic manipulation techniques to precisely control the relative distance between local spins along distinct crystallographic directions while simultaneously sensing their coupling by scanning tunneling spectroscopy. Our results reveal the existence of highly anisotropic interactions, lasting up to very long distances, demonstrating the possibility of crossing a quantum phase transition by acting on the direction and interatomic distance between spins. The high tunability provides novel opportunities for the realization of topological superconductivity and the rational design of magneto-superconducting interfaces.

Molecular Dopant-Dependent Charge Transport in Surface-Charge-Transfer-Doped Tungsten Diselenide Field Effect Transistors

The controllability of carrier density and major carrier type of transition metal dichalcogenides(TMDCs) is critical for electronic and optoelectronic device applications. To utilize doping in TMDC devices, it is important to understand the role of dopants in charge transport properties of TMDCs. Here, the effects of molecular doping on the charge transport properties of tungsten diselenide (WSe₂ ) are investigated using three p-type molecular dopants, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F₄ -TCNQ), tris(4-bromophenyl)ammoniumyl hexachloroantimonate (magic blue), and molybdenum tris(1,2-bis(trifluoromethyl)ethane-1,2-dithiolene) (Mo(tfd-COCF₃ )₃ ). The temperature-dependent transport measurements show that the dopant counterions on WSe₂ surface can induce Coulomb scattering in WSe₂ channel and the degree of scattering is significantly dependent on the dopant. Furthermore, the quantitative analysis revealed that the amount of charge transfer between WSe₂ and dopants is related to not only doping density, but also the contribution of each dopant ion toward Coulomb scattering. The first-principles density functional theory calculations show that the amount of charge transfer is mainly determined by intrinsic properties of the dopant molecules such as relative frontier orbital positions and their spin configurations. The authors' systematic investigation of the charge transport of doped TMDCs will be directly relevant for pursuing molecular routes for efficient and controllable doping in TMDC nanoelectronic devices.

Intrinsic 2D-XY ferromagnetism in a van der Waals monolayer

[Figure: see text].

Role of Two-Dimensional Ising Superconductivity in the Nonequilibrium Quasiparticle Spin-to-Charge Conversion Efficiency

Nonequilibrium studies of two-dimensional (2D) superconductors (SCs) with Ising spin-orbit coupling are prerequisite for their successful application to equilibrium spin-triplet Cooper pairs and, potentially, Majorana Fermions. By taking advantage of the recent discoveries of 2D SCs and their compatibility with any other materials, we fabricate here nonlocal magnon devices to examine how such 2D Ising superconductivity affects the conversion efficiency of magnon spin to quasiparticle charge in superconducting flakes of 2H-NbSe₂ transferred onto ferrimagnetic insulating Y₃Fe₅O₁₂. Comparison with a reference device based on a conventionally paired superconductor shows that the Y₃Fe₅O₁₂-induced in-plane (IP) exchange spin-splitting in the NbSe₂ flake is hindered by its inherent out-of-plane (OOP) spin-orbit field, which, in turn, limits the transition-state enhancement of the spin-to-charge conversion efficiency. Our out-of-equilibrium study highlights the significance of symmetry matching between underlying Cooper pairs and exchange-induced spin-splitting for the giant transition-state spin-to-charge conversion and may have implications toward proximity-engineered spin-polarized triplet pairing via tuning the relative strength of IP exchange and OOP spin-orbit fields in ferromagnetic insulator/2D Ising SC bilayers.

Long-range supercurrents through a chiral non-collinear antiferromagnet in lateral Josephson junctions

The proximity-coupling of a chiral non-collinear antiferromagnet (AFM)^1-5 with a singlet superconductor allows spin-unpolarized singlet Cooper pairs to be converted into spin-polarized triplet pairs^6-8, thereby enabling non-dissipative, long-range spin correlations^9-14. The mechanism of this conversion derives from fictitious magnetic fields that are created by a non-zero Berry phase¹⁵ in AFMs with non-collinear atomic-scale spin arrangements^1-5. Here we report long-ranged lateral Josephson supercurrents through an epitaxial thin film of the triangular chiral AFM Mn₃Ge (refs. ^3-5). The Josephson supercurrents in this chiral AFM decay by approximately one to two orders of magnitude slower than would be expected for singlet pair correlations^9-14 and their response to an external magnetic field reflects a clear spatial quantum interference. Given the long-range supercurrents present in both single- and mixed-phase Mn₃Ge, but absent in a collinear AFM IrMn¹⁶, our results pave a way for the topological generation of spin-polarized triplet pairs^6-8 via Berry phase engineering¹⁵ of the chiral AFMs.

Ionitronic manipulation of current-induced domain wall motion in synthetic antiferromagnets

The current induced motion of domain walls forms the basis of several advanced spintronic technologies. The most efficient domain wall motion is found in synthetic antiferromagnetic (SAF) structures that are composed of an upper and a lower ferromagnetic layer coupled antiferromagnetically via a thin ruthenium layer. The antiferromagnetic coupling gives rise to a giant exchange torque with which current moves domain walls at maximum velocities when the magnetic moments of the two layers are matched. Here we show that the velocity of domain walls in SAF nanowires can be reversibly tuned by several hundred m/s in a non-volatile manner by ionic liquid gating. Ionic liquid gating results in reversible changes in oxidation of the upper magnetic layer in the SAF over a wide gate-voltage window. This changes the delicate balance in the magnetic properties of the SAF and, thereby, results in large changes in the exchange coupling torque and the current-induced domain wall velocity. Furthermore, we demonstrate an example of an ionitronic-based spintronic switch as a component of a potential logic technology towards energy-efficient, all electrical, memory-in-logic.

Synthetic anti-ferromagnets, where two ferromagnetic layers are coupled anti-ferromagnetically via a spacer, are known for their very large current-induced domain wall velocities. Here, Guan et al show that the velocity of the domain walls in synthetic anti-ferromagnetic nanowires can be tuned over a wide range due to reversible oxidization via ionic liquid gating.

Nanoscale Noncollinear Spin Textures in Thin Films of a D2d Heusler Compound

Magnetic nano-objects, namely antiskyrmions and Bloch skyrmions, have been found to coexist in single-crystalline lamellae formed from bulk crystals of inverse tetragonal Heusler compounds with D_2d symmetry. Here evidence is shown for magnetic nano-objects in epitaxial thin films of Mn₂ RhSn formed by magnetron sputtering. These nano-objects exhibit a wide range of sizes with stability with respect to magnetic field and temperature that is similar to single-crystalline lamellae. However, the nano-objects do not form well-defined arrays, nor is any evidence found for helical spin textures. This is speculated to likely be a consequence of the poorer homogeneity of chemical ordering in the thin films. However, evidence is found for elliptically distorted nano-objects along perpendicular crystallographic directions within the epitaxial films, which is consistent with elliptical Bloch skyrmions observed in single-crystalline lamellae. Thus, these measurements provide strong evidence for the formation of noncollinear spin textures in thin films of Mn₂ RhSn. Using these films, it is shown that individual nano-objects can be deleted using a local magnetic field from a magnetic tip and collections of nano-objects can be similarly written. These observations suggest a path toward the use of these objects in thin films with D_2d symmetry as magnetic memory elements.

Vortex-Oriented Ferroelectric Domains in SnTe/PbTe Monolayer Lateral Heterostructures

Heterostructures formed from interfaces between materials with complementary properties often display unconventional physics. Of especial interest are heterostructures formed with ferroelectric materials. These are mostly formed by combining thin layers in vertical stacks. Here the first in situ molecular beam epitaxial growth and scanning tunneling microscopy characterization of atomically sharp lateral heterostructures between a ferroelectric SnTe monolayer and a paraelectric PbTe monolayer are reported. The bias voltage dependence of the apparent heights of SnTe and PbTe monolayers, which are closely related to the type-II band alignment of the heterostructure, is investigated. Remarkably, it is discovered that the ferroelectric domains in the SnTe surrounding a PbTe core form either clockwise or counterclockwise vortex-oriented quadrant configurations. In addition, when there is a finite angle between the polarization and the interface, the perpendicular component of the polarization always points from SnTe to PbTe. Supported by first-principles calculation, the mechanism of vortex formation and preferred polarization direction is identified in the interaction between the polarization, the space charge, and the strain effect at the horizontal heterointerface. The studies bring the application of 2D group-IV monochalcogenides on in-plane ferroelectric heterostructures a step closer.

Origin of the quasi-quantized Hall effect in ZrTe5

The quantum Hall effect (QHE) is traditionally considered to be a purely two-dimensional (2D) phenomenon. Recently, however, a three-dimensional (3D) version of the QHE was reported in the Dirac semimetal ZrTe5. It was proposed to arise from a magnetic-field-driven Fermi surface instability, transforming the original 3D electron system into a stack of 2D sheets. Here, we report thermodynamic, spectroscopic, thermoelectric and charge transport measurements on such ZrTe5 samples. The measured properties: magnetization, ultrasound propagation, scanning tunneling spectroscopy, and Raman spectroscopy, show no signatures of a Fermi surface instability, consistent with in-field single crystal X-ray diffraction. Instead, a direct comparison of the experimental data with linear response calculations based on an effective 3D Dirac Hamiltonian suggests that the quasi-quantization of the observed Hall response emerges from the interplay of the intrinsic properties of the ZrTe5 electronic structure and its Dirac-type semi-metallic character.