Atomic-Scale Desorption Through Electronic and Vibrational Excitation Mechanisms

A theoretical guide for fabricating a conductive molecular wire on a silicon surface via an in situ surface polymerization reaction

It has been a long-standing goal to make conductive molecular wires or linear polymer chains on traditional semiconductors or insulator substrates to satisfy the ongoing miniaturization in electronic devices. Here, we have proposed a surface in situ polymerization reaction for a pre-absorbed molecule, 4-hydrazinyl-3-(pyridin-4-ylmethyl)-benzaldehyde (HPyMB), to produce a conductive molecular wire on a silicon surface. Our first-principles calculations show that HPyMB molecules can absorb alternatively on the exposed Si atoms created via ultrahigh vacuum scanning tunneling microscopy on a hydrogen passivated H-Si(001)2 × 1 surface along the [110] direction. The adsorption is exothermic and its generated energy is sufficient for the following intermolecular dehydration polymerization reaction to overcome the activation energy barriers and thereafter form a molecular wire on the surface. This polymerized molecular wire is mechanically stable since it is chemically bonded onto the surface. After polymerization, the system becomes conductive due to the charge transfer from the molecule-surface bonds to their pyridine rings. More importantly, by removing 1.1 electrons from the system, the surface polymer chain is the sole conductive channel. Furthermore, its conducting nature remains robust even under a large external electric field. Our findings open a new window for the fabrication of conductive molecular wires or polymer chains on semiconductor surfaces, and provide insights into the mechanism behind the molecular wire conductivity.

Trapping and Characterization of a Single Hydrogen Molecule in a Continuously Tunable Nanocavity

Using inelastic electron tunneling spectroscopy with the scanning tunneling microscope (STM-IETS) and density functional theory calculations (DFT), we investigated properties of a single H2 molecule trapped in nanocavities with controlled shape and separation between the STM tip and the Au (110) surface. The STM tip not only serves for the purpose of characterization, but also is directly involved in modification of chemical environment of molecule. The bond length of H2 expands in the atop cavity, with a tendency of dissociation when the gap closes, whereas it remains unchanged in the trough cavity. The availability of two substantially different cavities in the same setup allows understanding of H2 adsorption on noble metal surfaces and sets a path for manipulating a single chemical bond by design.

Hot-electron-mediated surface chemistry: toward electronic control of catalytic activity

Energy dissipation at surfaces and interfaces is mediated by excitation of elementary processes, including phonons and electronic excitation, once external energy is deposited to the surface during exothermic chemical processes. Nonadiabatic electronic excitation in exothermic catalytic reactions results in the flow of energetic electrons with an energy of 1-3 eV when chemical energy is converted to electron flow on a short (femtosecond) time scale before atomic vibration adiabatically dissipates the energy (in picoseconds). These energetic electrons that are not in thermal equilibrium with the metal atoms are called "hot electrons". The detection of hot electron flow under atomic or molecular processes and understanding its role in chemical reactions have been major topics in surface chemistry. Recent studies have demonstrated electronic excitation produced during atomic or molecular processes on surfaces, and the influence of hot electrons on atomic and molecular processes. We outline research efforts aimed at identification of the intrinsic relation between the flow of hot electrons and catalytic reactions. We show various strategies for detection and use of hot electrons generated by the energy dissipation processes in surface chemical reactions and photon absorption. A Schottky barrier localized at the metal-oxide interface of either catalytic nanodiodes or hybrid nanocatalysts allows hot electrons to irreversibly transport through the interface. We show that the chemicurrent, composed of hot electrons excited by the surface reaction of CO oxidation or hydrogen oxidation, correlates well with the turnover rate measured separately by gas chromatography. Furthermore, we show that hot electron flows generated on a gold thin film by photon absorption (or internal photoemission) can be amplified by localized surface plasmon resonance. The influence of hot charge carriers on the chemistry at the metal-oxide interface are discussed for the cases of Au, Ag, and Pt nanoparticles on oxide supports and Pt-CdSe-Pt nanodumbbells. We show that the accumulation or depletion of hot electrons on metal nanoparticles, in turn, can also influence catalytic reactions. Mechanisms suggested for hot-electron-induced chemical reactions on a photoexcited plasmonic metal are discussed. We propose that the manipulation of the flow of hot electrons by changing the electrical characteristics of metal-oxide and metal-semiconductor interfaces can give rise to the intriguing capability of tuning the catalytic activity of hybrid nanocatalysts.

Probing Single-Molecule Dissociations from a Bimolecular Complex NO-Co-Porphyrin

Axial coordinations of diatomic NO molecules to metalloporphyrins play key roles in dynamic processes of biological functions such as blood pressure control and immune response. Probing such reactions at the single molecule level is essential to understand their physical mechanisms but has been rarely performed. Here we report on our single molecule dissociation experiments of diatomic NO from NO-Co-porphyrin complexes describing its dissociation mechanisms. Under tunneling junctions of scanning tunneling microscope, both positive and negative energy pulses gave rise to dissociations of NO with threshold voltages, +0.68 and -0.74 V at 0.1 nA tunneling current on Au(111). From the observed power law relations between dissociation rate and tunneling current, we argue that the dissociations were inelastically induced with molecular orbital resonances by stochastically tunneling electrons, which is supported with our density functional theory calculations. Our study shows that single molecule dissociation experiments can be used to probe reaction mechanisms in a variety of axial coordinations between small molecules and metalloporphyrins.

Tunneling Desorption of Single Hydrogen on the Surface of Titanium Dioxide

We investigated the reaction mechanism of the desorption of single hydrogen from a titanium dioxide surface excited by the tip of a scanning tunneling microscope (STM). Analysis of the desorption yield, in combination with theoretical calculations, indicates the crucial role played by the applied electric field. Instead of facilitating desorption by reducing the barrier height, the applied electric field causes a reduction in the barrier width, which, when coupled with the electron excitation induced by the STM tip, leads to the tunneling desorption of the hydrogen. A significant reduction in the desorption yield was observed when deuterium was used instead of hydrogen, providing further support for the tunneling-desorption mechanism.

Atomically Traceable Nanostructure Fabrication

Reducing the scale of etched nanostructures below the 10 nm range eventually will require an atomic scale understanding of the entire fabrication process being used in order to maintain exquisite control over both feature size and feature density. Here, we demonstrate a method for tracking atomically resolved and controlled structures from initial template definition through final nanostructure metrology, opening up a pathway for top-down atomic control over nanofabrication. Hydrogen depassivation lithography is the first step of the nanoscale fabrication process followed by selective atomic layer deposition of up to 2.8 nm of titania to make a nanoscale etch mask. Contrast with the background is shown, indicating different mechanisms for growth on the desired patterns and on the H passivated background. The patterns are then transferred into the bulk using reactive ion etching to form 20 nm tall nanostructures with linewidths down to ~6 nm. To illustrate the limitations of this process, arrays of holes and lines are fabricated. The various nanofabrication process steps are performed at disparate locations, so process integration is discussed. Related issues are discussed including using fiducial marks for finding nanostructures on a macroscopic sample and protecting the chemically reactive patterned Si(100)-H surface against degradation due to atmospheric exposure.

Vibrational excitation induces double reaction

Electron-induced reaction at metal surfaces is currently the subject of extensive study. Here, we broaden the range of experimentation to a comparison of vibrational excitation with electronic excitation, for reaction of the same molecule at the same clean metal surface. In a previous study of electron-induced reaction by scanning tunneling microscopy (STM), we examined the dynamics of the concurrent breaking of the two C-I bonds of ortho-diiodobenzene physisorbed on Cu(110). The energy of the incident electron was near the electronic excitation threshold of E0=1.0 eV required to induce this single-electron process. STM has been employed in the present work to study the reaction dynamics at the substantially lower incident electron energies of 0.3 eV, well below the electronic excitation threshold. The observed increase in reaction rate with current was found to be fourth-order, indicative of multistep reagent vibrational excitation, in contrast to the first-order rate dependence found earlier for electronic excitation. The change in mode of excitation was accompanied by altered reaction dynamics, evidenced by a different pattern of binding of the chemisorbed products to the copper surface. We have modeled these altered reaction dynamics by exciting normal modes of vibration that distort the C-I bonds of the physisorbed reagent. Using the same ab initio ground potential-energy surface as in the prior work on electronic excitation, but with only vibrational excitation of the physisorbed reagent in the asymmetric stretch mode of C-I bonds, we obtained the observed alteration in reaction dynamics.

Spin transport in dangling-bond wires on doped H-passivated Si(100)

New advances in single-atom manipulation are leading to the creation of atomic structures on H-passivated Si surfaces with functionalities important for the development of atomic and molecular based technologies. We perform total-energy and electron-transport calculations to reveal the properties and understand the features of atomic wires crafted by H removal from the surface. The presence of dopants radically change the wire properties. Our calculations show that dopants have a tendency to approach the dangling-bond wires, and in these conditions, transport is enhanced and spin selective. These results have important implications in the development of atomic-scale spintronics showing that boron, and to a lesser extent phosphorous, convert the wires in high-quality spin filters.

Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling

For potential applications in spintronics and quantum computing, it is desirable to place a quantum spin Hall insulator [i.e., a 2D topological insulator (TI)] on a substrate while maintaining a large energy gap. Here, we demonstrate a unique approach to create the large-gap 2D TI state on a semiconductor surface, based on first-principles calculations and effective Hamiltonian analysis. We show that when heavy elements with strong spin orbit coupling (SOC) such as Bi and Pb atoms are deposited on a patterned H-Si(111) surface into a hexagonal lattice, they exhibit a 2D TI state with a large energy gap of ≥0.5 eV. The TI state arises from an intriguing substrate orbital filtering effect that selects a suitable orbital composition around the Fermi level, so that the system can be matched onto a four-band effective model Hamiltonian. Furthermore, it is found that within this model, the SOC gap does not increase monotonically with the increasing strength of SOC. These interesting results may shed new light in future design and fabrication of large-gap topological quantum states.

Hydrogen adsorption and diffusion around Si(0 0 1)/Si(1 1 0) corners in nanostructures

While the diffusion of hydrogen on silicon surfaces has been relatively well characterized, both experimentally and theoretically, diffusion around corners between surfaces, as will be found on nanowires and nanostructures, has not been studied. Motivated by nanostructure fabrication by Patterned Atomic Layer Epitaxy, we present a density functional theory study of the diffusion of hydrogen around the edge formed by the orthogonal (0 0 1) and (1 1 0) surfaces in silicon. We find that the barrier from (0 0 1) to (1 1 0) is approximately 0.3 eV lower than from (1 1 0) to (0 0 1), and that it is comparable to diffusion between rows on a clean surface, with no significant effect on the hydrogen patterns at the growth temperatures used.

Surface hydrogenation reactions at the single-molecule level

Hydrogenation and dehydrogenation reactions on metal surfaces are among the most important in heterogeneous catalysis. Such reactions can be observed and characterized at the single-molecule level with low temperature scanning tunnelling microscopy (LT-STM). A brief review of such studies is presented. A specific example, the hydrogenation of methyl isocyanide to methyl aminocarbyne on the Pt(111) surface, is described in detail. This reaction was first identified in a study with reflection absorption infrared spectroscopy, a technique that averages over monolayer quantities of molecules. The example illustrates the importance of characterization of surface reactions with complementary techniques in order to properly interpret the single-molecule LT-STM images. A second example of the complementary nature of LT-STM and other surface characterization methods is the tip-induced dehydrogenation on Pt(111) of acetonitrile, the more stable isomer of methyl isocyanide.

Electron beam controlled restructuring of luminescence centers in polycrystalline diamond

Color centers in diamond are becoming prime candidates for applications in photonics and sensing. In this work we study the time evolution of cathodoluminescence (CL) emissions from color centers in a polycrystalline diamond film under electron irradiation. We demonstrate room-temperature activation of several luminescence centers through a thermal mechanism that is catalyzed by an electron beam. CL activation kinetics were measured in realtime and are discussed in the context of electron induced dehydrogenation of nitrogen-vacancy-hydrogen clusters and dislocation defects. Our results also show that (unintentional) electron beam induced chemical etching can take place during CL analysis of diamond. The etching is caused by residual H2O molecules present in high vacuum CL systems.

Lithography and doping in strained Si towards atomically precise device fabrication

We investigate the ability to introduce strain into atomic-scale silicon device fabrication by performing hydrogen lithography and creating electrically active phosphorus δ-doped silicon on strained silicon-on-insulator (sSOI) substrates. Lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist layer adsorbed on a clean, atomically flat sSOI(001) surface with a scanning tunnelling microscope tip operating in ultra-high vacuum. The influence of the tip-to-sample bias on the lithographic process was investigated allowing us to pattern feature-sizes from several microns down to 1.3 nm. In parallel we have investigated the impact of strain on the electrical properties of P:Si δ-doped layers. Despite the presence of strain inducing surface variations in the silicon substrate we still achieve high carrier densities (>1.0 × 10(14) cm(-2)) with mobilities of ∼100 cm(2) V(-1) s(-1). These results open up the possibility of a scanning-probe lithography approach to the fabrication of strained atomic-scale devices in silicon.

Engineering the electronic structure of surface dangling bond nanowires of different size and dimensionality

We demonstrate how the local density of electronic states evolves as the size and dimensionality of surface dangling bond nanowires are modified. These wires were fabricated using the probe of a scanning tunneling microscope on a hydrogen passivated n-type Si(100)-(2 × 1) surface. We demonstrate that by varying the number and arrangement of dangling bonds on the surface it is possible to arbitrarily engineer the electronic characteristic of a surface nanowire from that of a semiconductor with a controllable band gap to that of a metal.

Manipulation of subsurface donors in ZnO

Single donors close to the ZnO(0001) surface are investigated with scanning tunneling microscopy. Their binding energies and depths are determined from spatially resolved spectra of the differential conductance. At elevated bias of the STM tip, vertical motion of the donors can be induced. The direction of the motion can be controlled by the bias polarity.

Antiferromagnetic ordering of dangling-bond electrons at the stepped Si(001) surface

Using first-principles density-functional calculations, we explore the possibility of magnetic order at the rebonded DB step of the Si(001) surface. The rebonded DB step containing threefold coordinated Si atoms can be treated as a one-dimensional dangling-bond (DB) wire along the step edge. We find that Si atoms composing the step edge are displaced up and down alternatively due to Jahn-Teller-like distortion, but, if Si dimers on the terrace are passivated by H atoms, the antiferromagnetic (AFM) order can be stabilized at the step edge with a suppression of Jahn-Teller-like distortion. We also find that the energy preference of AFM order over Jahn-Teller-like distortion is enhanced in an oscillatory way as the length of DB wires decreases, showing the so-called quantum size effects.

Hot carrier-driven catalytic reactions on Pt-CdSe-Pt nanodumbbells and Pt/GaN under light irradiation

Hybrid nanocatalysts consisting of metal nanoparticle-semiconductor junctions offer an interesting platform to study the role of metal-oxide interfaces and hot electron flows in heterogeneous catalysis. Here, we report that hot carriers generated upon photon absorption significantly impact the catalytic activity of CO oxidation. We found that Pt-CdSe-Pt nanodumbbells exhibit a higher turnover frequency by a factor of 2 during irradiation by light with energy higher than the bandgap of CdSe, while the turnover rate on bare Pt nanoparticles did not depend on light irradiation. We found that Pt nanoparticles deposited on a GaN substrate under light irradiation exhibit changes in catalytic activity of CO oxidation that depends on the type of doping of the GaN. We suppose that hot electrons are generated upon the absorption of photons by the semiconducting nanorods or substrates, whereafter the hot electrons are injected into the Pt nanoparticles, resulting in the change in catalytic activity. The results imply that hot carrier flows generated during light irradiation significantly influence the catalytic activity of CO oxidation, leading to potential applications as a hot electron-based catalytic actuator.

STM-switching of organic molecules on semiconductor surfaces: an above threshold density matrix model for 1,5 cyclooctadiene on Si(100)

The scanning tunnelling microscope (STM)-induced switching of a single cyclooctadiene molecule between two stable conformations chemisorbed on a Si(100) surface is investigated using an above threshold model including a neutral ground state and an ionic excited state potential. Switching was recently achieved experimentally with an STM operated at cryogenic temperatures (Nacci et al 2008 Phys. Rev. B 77 121405(R)) and rationalized by a below threshold model using just a single potential energy surface (Nacci et al 2009 Nano Lett. 9 2997). In the present paper, we show that experimental key findings on the inelastic electron tunnelling (IET) switching can also be rationalized using an above threshold density matrix model, which includes, in addition to the neutral ground state potential, an anionic or cationic excited potential. We use one and two-dimensional potential energy surfaces. Furthermore, the influence of two key parameters of the density matrix description, namely the electronic lifetime of the ionic resonance and the vibrational lifetimes, on the ground state potential are discussed.

Patterning of sub-1 nm dangling-bond lines with atomic precision alignment on H:Si(100) surface at room temperature

We have patterned sub-1 nm dangling-bond (DB) lines on a H-terminated Si(100)-2 × 1 surface aligned with atomic precision at room temperature using a scanning tunneling microscope (STM) to controllably desorb hydrogen atoms from a H:Si(100) surface. In order to achieve continuous and aligned DB lines, we have performed a detailed investigation of the effects of patterning parameters such as the writing voltage, writing current and electron dosage, as well as STM tip apex geometry on the fabrication and alignment of Si DB lines. We show that there exists an optimum set of patterning parameters which enables us to obtain near-perfect Si DB lines and align them with near atomic precision in a highly controllable manner. In addition, our results indicate that the pattern quality is weakly dependent on the STM tip apex quality when the patterning parameters are within the optimum parameter space.

Scanning tunneling microscopy study and nanomanipulation of graphene-coated water on mica

We study interfacial water trapped between a sheet of graphene and a muscovite (mica) surface using Raman spectroscopy and ultrahigh vacuum scanning tunneling microscopy (UHV-STM) at room temperature. We are able to image the graphene-water interface with atomic resolution, revealing a layered network of water trapped underneath the graphene. We identify water layer numbers with a carbon nanotube height reference. Under normal scanning conditions, the water structures remain stable. However, at greater electron energies, we are able to locally manipulate the water using the STM tip.

Time-resolved energy transduction in a quantum capacitor

The capability to deposit charge and energy quantum-by-quantum into a specific atomic site could lead to many previously unidentified applications. Here we report on the quantum capacitor formed by a strongly localized field possessing such capability. We investigated the charging dynamics of such a capacitor by using the unique scanning tunneling microscopy that combines nanosecond temporal and subangstrom spatial resolutions, and by using Si(001) as the electrode as well as the detector for excitations produced by the charging transitions. We show that sudden switching of a localized field induces a transiently empty quantum dot at the surface and that the dot acts as a tunable excitation source with subangstrom site selectivity. The timescale in the deexcitation of the dot suggests the formation of long-lived, excited states. Our study illustrates that a quantum capacitor has serious implications not only for the bottom-up nanotechnology but also for future switching devices.

Inducing electronic changes in graphene through silicon (100) substrate modification

We have performed scanning tunneling microscopy and spectroscopy (STM/STS) measurements as well as ab initio calculations for graphene monolayers on clean and hydrogen(H)-passivated silicon (100) (Si(100)/H) surfaces. In order to experimentally study the same graphene piece on both substrates, we develop a method to depassivate hydrogen from under graphene monolayers on the Si(100)/H surface. Our work represents the first demonstration of successful and reproducible depassivation of hydrogen from beneath monolayer graphene flakes on Si(100)/H by electron-stimulated desorption. Ab initio simulations combined with STS taken before and after hydrogen desorption demonstrate that graphene interacts differently with the clean and H-passivated Si(100) surfaces. The Si(100)/H surface does not perturb the electronic properties of graphene, whereas the interaction between the clean Si(100) surface and graphene changes the electronic states of graphene significantly. This effect results from the covalent bonding between C and surface Si atoms, modifying the π-orbital network of the graphene layer. The local density of states shows that the bonded C and Si surface states are highly disturbed near the Fermi energy.

Tunnel coupled dangling bond structures on hydrogen terminated silicon surfaces

We study both experimentally and theoretically the electronic behavior of dangling bonds (DBs) at a hydrogen terminated Si(100)-2×1 surface. Dangling bonds behave as quantum dots and, depending on their separation, can be tunnel coupled with each other or completely isolated. On n-type highly doped silicon, the latter have a net charge of -1e, while coupled DBs exhibit altered but predictable filling behavior derived from an interplay between interdot tunneling and Coulomb repulsion. We found good correlation between many scanning tunneling micrographs of dangling bond structures and our theoretical results of a corresponding extended Hubbard model. We also demonstrated chemical methods to prevent tunnel coupling and isolate charge on a single dangling bond.

Charge control of surface dangling bonds using nanoscale Schottky contacts

Titanium silicide (TiSi2) nanoscale Schottky contacts were prepared on hydrogen-terminated n-type Si (100) surfaces. The Schottky contact created a region of upward band bending surrounding the TiSi2 contacts. The surface band bending was observed as a sloping surface depression using the scanning tunneling microscope. Scanning tunneling spectroscopy measurements also show shifted I/V data consistent with upward band bending. Charge control of dangling bonds was accomplished through a distance relationship between the dangling bond and the TiSi2 contact. The lowered chemical potential in the near contact region removes the ability of dangling bonds to become negatively charged while dangling bonds outside the close contact region remain fully charged. Methods to actively control dangling bond charge states are discussed.

Theory of Electron Field Emission From Diamond And Diamond-Ldxe Carbon

It is shown that the facile electron field emission from diamond and diamond-like carbon occurs because surface groups such as C-H can produce large changes in electron affinity, so that electric fields from the anode can be focused towards unhydrogenated surface areas of high affinity, the fields ending on negative charges in an underlying depletion layer. The resulting downwards band bending creates very large fields which cause Fowler-Nordheim emission, while not exceeding the material's breakdown field, which is the highest for any solid.

Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy

In this paper we demonstrate atomic-scale lithography on hydrogen terminated Ge(001). The lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist layer adsorbed on a clean, atomically flat Ge(001) surface with a scanning tunneling microscope tip operating in ultra-high vacuum. The influence of the tip-to-sample bias on the lithographic process have been investigated. Lithographic patterns with feature-sizes from 200 to 1.8 nm have been achieved by varying the tip-to-sample bias. These results open up the possibility of a scanning-probe lithography approach to the fabrication of future atomic-scale devices in germanium.

Making Mn substitutional impurities in InAs using a scanning tunneling microscope

We describe in detail an atom-by-atom exchange manipulation technique using a scanning tunneling microscope probe. As-deposited Mn adatoms (Mn(ad)) are exchanged one-by-one with surface In atoms (In(su)) to create a Mn surface-substitutional (Mn(In)) and an exchanged In adatom (In(ad)) by an electron tunneling induced reaction Mn(ad) + In(su) --> Mn(In) + In(ad) on the InAs(110) surface. In combination with density-functional theory and high resolution scanning tunneling microscopy imaging, we have identified the reaction pathway for the Mn and In atom exchange.

Patterning graphene at the nanometer scale via hydrogen desorption

We have demonstrated the reversible and local modification of the electronic properties of graphene by hydrogen passivation and subsequent electron-stimulated hydrogen desorption with an scanning tunneling microscope tip. In addition to changing the morphology, we show that the hydrogen passivation is stable at room temperature and modifies the electronic properties of graphene, opening a gap in the local density of states. This insulating state is reversed by local desorption of the hydrogen, and the unaltered electronic properties of graphene are recovered. Using this mechanism, we have "written" graphene patterns on nanometer length scales. For patterned regions that are roughly 20 nm or greater, the inherent electronic properties of graphene are completely recovered. Below 20 nm we observe dramatic variations in the electronic properties of the graphene as a function of pattern size. This reversible and local mechanism for modifying the electronic properties of graphene has far-reaching implications for nanoscale circuitry fabricated from this revolutionary material.

Atomic-scale, all epitaxial in-plane gated donor quantum dot in silicon

Nanoscale control of doping profiles in semiconductor devices is becoming of critical importance as channel length and pitch in metal oxide semiconductor field effect transistors (MOSFETs) continue to shrink toward a few nanometers. Scanning tunneling microscope (STM) directed self-assembly of dopants is currently the only proven method for fabricating atomically precise electronic devices in silicon. To date this technology has realized individual components of a complete device with a major obstacle being the ability to electrically gate devices. Here we demonstrate a fully functional multiterminal quantum dot device with integrated donor based in-plane gates epitaxially assembled on a single atomic plane of a silicon (001) surface. We show that such in-plane regions of highly doped silicon can be used to gate nanostructures resulting in highly stable Coulomb blockade (CB) oscillations in a donor-based quantum dot. In particular, we compare the use of these all epitaxial in-plane gates with conventional surface gates and find superior stability of the former. These results show that in the absence of the randomizing influences of interface and surface defects the electronic stability of dots in silicon can be comparable or better than that of quantum dots defined in other material systems. We anticipate our experiments will open the door for controlled scaling of silicon devices toward the single donor limit.