ZnO-based ultraviolet photodetectors

Atomic-Thin ZnO Sheet for Visible-Blind Ultraviolet Photodetection

The atomic-thin 2D semiconductors have emerged as plausible candidates for future optoelectronics with higher performance in terms of the scaling process. However, currently reported 2D photodetectors still have huge shortcomings in ultraviolet and especially visible-blind wavelengths. Here, a simple and nontoxic surfactant-assisted synthesis strategy is reported for the controllable growth of atomically thin (1.5 to 4 nm) ZnO nanosheets with size ranging from 3 to 30 µm. Benefit from the short carbon chains and the water-soluble ability of sodium dodecyl sulfate (SDS), the synthesized ZnO nanosheets possess high crystal quality and clean surface, leading to good compatibility with traditional micromanufacturing technology and high sensitivity to UV light. The photodetectors constructed with ZnO demonstrate the highest responsivity (up to 2.0 × 10⁴ A W^-1 ) and detectivity (D* = 6.83 × 10¹⁴ Jones) at a visible-blind wavelength of 254 nm, and the photoresponse speed is optimized by the 400 °C annealing treatment (τ_R  = 3.97 s, τ_D  = 5.32 s), thus the 2D ZnO can serve as a promising material to fill in the gap for deep-UV photodetection. The method developed here opens a new avenue to controllably synthesize 2D nonlayered materials and accelerates their applications in high-performance optoelectronic devices.

Investigation of Ga2O3-Based Deep Ultraviolet Photodetectors Using Plasma-Enhanced Atomic Layer Deposition System

In this work, Ga₂O₃ films were deposited on sapphire substrates using a plasma-enhanced atomic layer deposition system with trimethylgallium precursor and oxygen (O₂) plasma. To improve the quality of Ga₂O₃ films, they were annealed in an O₂ ambient furnace system for 15 min at 700, 800, and 900 °C, respectively. The performance improvement was verified from the measurement results of X-ray diffraction, X-ray photoelectron spectroscopy, and photoluminescence spectroscopy. The optical bandgap energy of the Ga₂O₃ films decreased with an increase of annealing temperatures. Metal-semiconductor-metal ultraviolet C photodetectors (MSM UVC-PDs) with various Ga₂O₃ active layers were fabricated and studied in this work. The cut-off wavelength of the MSM UVC-PDs with the Ga₂O₃ active layers annealed at 800 °C was 250 nm. Compared with the performance of the MSM UVC-PDs with the as-grown Ga₂O₃ active layers, the MSM UVC-PDs with the 800 °C-annealed Ga₂O₃ active layers under a bias voltage of 5 V exhibited better performances including photoresponsivity of 22.19 A/W, UV/visible rejection ratio of 5.98 × 10⁴, and detectivity of 8.74 × 10¹² cmHz^1/2W^-1.

Free carrier enhanced depletion in ZnO nanorods decorated with bimetallic AuPt nanoclusters

The decoration of semiconductor nanostructures with small metallic clusters usually leads to an improvement of their properties in sensing or catalysis. Bimetallic cluster decoration typically is claimed to be even more effective. Here, we report a detailed investigation of the effects of Au, Pt or AuPt nanocluster decoration of ZnO nanorods on charge transport, photoluminescence and UV sensitivity. ZnO nanorods were synthesized by chemical bath deposition while decoration with small nanoclusters (2-3 nm in size) was achieved by a laser-ablation based cluster beam deposition technology. The structural properties were investigated by scanning electron microscopy, high resolution transmission electron microscopy, X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry, and the optoelectronic properties by current-voltage and photoluminescence measurements. The extent of band bending at the cluster-ZnO interface was quantitatively modeled through numerical simulations. The decoration of ZnO nanorods with monometallic Au or Pt nanoclusters causes a significant depletion of free electrons below the surface, leading to a reduction of UV photoluminescence, an increase of ZnO nanorod dark resistance (up to 200 times) and, as a consequence, an improved sensitivity (up to 6 times) to UV light. These effects are strongly enhanced (up to 450 and 10 times, respectively) when ZnO nanorods are decorated with bimetallic AuPt nanoclusters that substantially augment the depletion of free carriers likely due to a more efficient absorption of the gas molecules on the surface of the bimetallic AuPt nanoclusters than on that of their monometallic counterparts. The depletion of free carriers in cluster decorated ZnO nanorods is quantitatively investigated and modelled, allowing the application of these composite materials in UV sensing and light induced catalysis.

Enhancement in the photonic response of ZnO nanorod-gated AlGaN/GaN HEMTs with N2O plasma treatment

We demonstrate an improvement in the photoresponse characteristics of ultraviolet (UV) photodetectors (PDs) using the N₂O plasma-treated ZnO nanorod (NR) gated AlGaN/GaN high electron mobility transistor (HEMT) structure. The PDs fabricated with ZnO NRs plasma-treated for 6 min show superior performance in terms of responsivity (∼1.54×10 ⁵ A/W), specific detectivity (∼ 4.7×10¹³ cm·Hz^-1/2/W), and on/off current ratio (∼40). These improved performance parameters are the best among those from HEMT-based PDs reported to date. Photoluminescence analysis shows a significant enhancement in near band edge emission due to the effective suppression of native defects near the surface of ZnO NRs after plasma treatment. As our X-ray photoelectron spectroscopy reveals a very high O/Zn ratio of ∼0.96 from the NR samples plasma-treated for 6 min, the N₂O plasma radicals also show a clear impact on ZnO stoichiometry. From our X-ray diffraction analysis, the plasma-treated ZnO NRs show much greater improvement in (002) peak intensity and degree of (002) orientation (∼0.996) than those of as-grown NRs. This significant enhancement in (002) degree of orientation and stoichiometry in ZnO nano-crystals contribute to the enhancement in photoresponse characteristics of the PDs.

Realization of Deep UV Plasmonic Enhancement to Photo Response through Al Mesh

High-performance UV detectors are of great significance for various applications. Plasmonic structures enable great improvement of the performance of detectors. However, to push the plasmonic enhancement to photo response into the deep-UV region presents some challenges. In this work, we found that the optical properties of the supporting layer play important roles in achieving the optimal plasmonic enhancement. Therefore, we fully considered the dependence of the optical constants of the MgZnO supporting layer, which is a promising material to realize deep-UV photodetectors, on microstructure and crystalline quality, which are related to the fabrication method. Based on the optical constants, we designed an Al mesh plasmonic structure and fabricated it with a polystyrene monolayer as a mask. Finally, we demonstrated a three-times enhancement to photo response with UV radiation at 254 nm.

Femtosecond Pulse Ablation Assisted Mg-ZnO Nanoparticles for UV-Only Emission

The need for improved UV emitting luminescent materials underscored by applications in optical communications, sterilization and medical technologies is often addressed by wide bandgap semiconducting oxides. Among these, the Mg-doped ZnO system is of particular interest as it offers the opportunity to tune the UV emission by engineering its bandgap via doping control. However, both the doped system and its pristine congener, ZnO, suffer from being highly prone to parasitic defect level emissions, compromising their efficiency as light emitters in the ultraviolet region. Here, employing the process of femtosecond pulsed laser ablation in a liquid (fs-PLAL), we demonstrate the systematic control of enhanced UV-only emission in Mg-doped ZnO nanoparticles using both photoluminescence and cathodoluminescence spectroscopies. The ratio of luminescence intensities corresponding to near band edge emission to defect level emission was found to be six-times higher in Mg-doped ZnO nanoparticles as compared to pristine ZnO. Insights from UV-visible absorption and Raman analysis also reaffirm this defect suppression. This work provides a simple and effective single-step methodology to achieve UV-emission and mitigation of defect emissions in the Mg-doped ZnO system. This is a significant step forward in its deployment for UV emitting optoelectronic devices.

Inhibition of Photoconversion Activity in Self-Assembled ZnO-Graphene Quantum Dots Aggregated by 4-Aminophenol Used as a Linker

The aggregation of zinc oxide nanoparticles leads to an increased absorbance in the ultraviolet-visible region by an induced light scattering effect. Herein, we demonstrate the inhibition of photoconversion activity in ZnO-graphene core-shell quantum dots (QD) (ZGQDs) agglomerated by 4-aminophenol (4-AP) used as a linker. The ZnO-graphene quantum dots (QD) aggregates (ZGAs) were synthesized using a facile solvothermal process. The ZGAs revealed an increased absorbance in the wavelengths between 350 and 750 nm as compared with the ZGQDs. Against expectation, the calculated average photoluminescence lifetime of ZGAs was 7.37 ns, which was 4.65 ns longer than that of ZGQDs and was mainly due to the high contribution of a slow (τ2, τ3) component by trapped carriers in the functional groups of graphene shells and 4-AP. The photoelectrochemical (PEC) cells and photodetectors (PDs) were fabricated to investigate the influence of ZGAs on the photoconversion activity. The photocurrent density of PEC cells with ZGAs was obtained as 0.04 mA/cm2 at 0.6 V, which was approximately 3.25 times lower than that of the ZGQDs. The rate constant value of the photodegradation value of rhodamine B was also decreased by around 1.4 times. Furthermore, the photoresponsivity of the PDs with ZGAs (1.54 μA·mW-1) was about 2.5 times as low as that of the PDs with ZGQDs (3.85 μA·mW-1). Consequently, it suggests that the device performances could be degraded by the inhibition phenomenon of the photoconversion activity in the ZGAs due to an increase of trap sites.

The recent progress of triboelectric nanogenerator-assisted photodetectors

Since 2012, triboelectric nanogenerator (TENG) has attracted significant interest from researchers in the field of energy conversion due to its unique output characteristics of high voltage, pulse and low current. In addition, recent advancements have demonstrated that photodetection platforms based on TENG exhibit great advantages such as being simple, low-cost, portable, with high sensitivity, high response, etc, and are environment friendly. Here, this article provides a comprehensive review on the state-of-the-art photodetectors based on TENG in recent years, and a detailed introduction to the structural design and potential mechanisms. It mainly focuses on self-powered photodetectors (including photodetectors as a load resistance of a TENG and photosensitive materials such as tribo-layer of TENG) and the modulation of photodetectors based on TENG (including utilizing the voltage of TENG as well as triboelectric microplasma). Finally, we put forward some perspectives and outlook, including structure engineering and mechanism guidance, for the future development of simple, high-performance and portable photodetectors based on TENG.

High-Performance Ultraviolet Photodetector Based on a Zinc Oxide Nanoparticle@Single-Walled Carbon Nanotube Heterojunction Hybrid Film

A hybrid film consisting of zinc oxide nanoparticles (ZnO NPs) and carbon nanotubes (CNTs) is formed on a glass substrate using a simple and swift spin coating process for the use in ultraviolet photodetectors (UV PDs). The incorporation of various types of CNTs into ZnO NPs (ZnO@CNT) enhances the performance of UV PDs with respect to sensitivity, photoresponse, and long-term operation stability when compared with pristine ZnO NP films. In particular, the introduction of single-walled CNTs (SWNTs) exhibits a superior performance when compared with the multiwalled CNTs (MWNTs) because SWNTs can not only facilitate the stability of free electrons generated by the O₂ desorption on ZnO under UV irradiation owing to the built-in potential between ZnO and SWNT heterojunctions, but also allow facile and efficient transport pathways for electrons through SWNTs with high aspect ratio and low defect density. Furthermore, among the various SWNTs (arc-discharged (A-SWNT), Hipco (H-SWNT), and CoMoCat (C-SWNT) SWNTs), we demonstrate the ZnO@A-SWNT hybrid film exhibits the best performance because of higher conductivity and aspect ratio in A-SWNTs when compared with those of other types of SWNTs. At the optimized conditions for the ZnO@A-SWNT film (ratio of A-SWNTs and ZnO NPs and electrode distance), ZnO@A-SWNT displays a sensitivity of 4.9 × 10³ % with an on/off current ratio of ~10⁴ at the bias of 2 V under the UV wavelength of 365 nm (0.47 mW/cm²). In addition, the stability in long-term operation and photoresponse time are significantly improved by the introduction of A-SWNTs into the ZnO NP film when compared with the bare ZnO NPs film.

Continuous Monitoring of Air Purification: A Study on Volatile Organic Compounds in a Gas Cell

Air pollution is one of the major environmental issues that humanity is facing. Considering Indoor Air Quality (IAQ), Volatile Organic Compounds (VOCs) are among the most harmful gases that need to be detected, but also need to be eliminated using air purification technologies. In this work, we tackle both problems simultaneously by introducing an experimental setup enabling continuous measurement of the VOCs by online absorption spectroscopy using a MEMS-based Fourier Transform infrared (FTIR) spectrometer, while those VOCs are continuously eliminated by continuous adsorption and photocatalysis, using zinc oxide nanowires (ZnO-NWs). The proposed setup enabled a preliminary study of the mechanisms involved in the purification process of acetone and toluene, taken as two different VOCs, also typical of those that can be found in tobacco smoke. Our experiments revealed very different behaviors for those two gases. An elimination ratio of 63% in 3 h was achieved for toluene, while it was only 14% for acetone under same conditions. Adsorption to the nanowires appears as the dominant mechanism for the acetone, while photocatalysis is dominant in case of the toluene.

Wide spectral photoresponse of template assisted out of plane grown ZnO/NiO composite nanowire photodetector

Zinc oxide (ZnO) one-dimensional nanostructures are extensively used in ultra-violet (UV) detection. To improve the optical sensing capability of ZnO, various nickel oxide (NiO) based p-n junctions have been employed. ZnO/NiO heterojunction based sensing has been limited to UV detection and not been extended to the visible region. In the present work, p-NiO/n-ZnO composite nanowire (NW) heterojunction based UV-visible photodetector is fabricated. A porous anodic aluminum oxide template based electrochemical deposition method is adopted for well separated and vertically aligned growth of composite NWs. The photoresponse is studied in an out of plane contact configuration. The fabricated photodetector shows fast response under UV-visible light with a rise and decay time of tens of ms. The wide spectral photoresponse is analyzed in terms of conduction from defect states of ZnO and interfacial defects during p-n junction formation. Light interaction with heterojunction along the length of the composite NW results in enhanced visible photoresponse of the detector and is further supported by simulation.

Photocatalytic synthesis of unsymmetrical thiourea derivatives via visible-light irradiation using nitrogen-doped ZnO nanorods

N-ZnO as a photocatalyst under visible-light irradiation promoted an environmentally friendly route for the synthesis of unsymmetrical thiourea derivatives.

Enlarged responsivity-ZnO honeycomb nanomaterials UV photodetectors with light trapping effect

The ability of ZnO photodetectors to absorb UV light plays a key role in enhancing responsivity and performance in electronic, optical, and photonic devices. Herein, the light trapping effect of ZnO is used to design and fabricate a novel honeycomb-like ZnO nanomaterial-based UV photodetector with an excellent photoelectric performance. Compared with the traditional ZnO film UV photodetector, the photoresponsivity of the film with honeycomb nanomaterials can reach up to 4.79 A W-1, which is an improvement of about 300 times. In addition, the honeycomb ZnO nanomaterials UV photodetectors exhibit an improved light absorption, a very photo-to-dark current ratio (2.46 × 103), and an excellent detectivity (4.61 × 1012 Jones). The ZnO honeycomb nanostructure synthesized in this work exhibits a strong trapping effect, providing new insights into the research of nanomaterials used for UV photodetectors.

Effect of GO Additive in ZnO/rGO Nanocomposites with Enhanced Photosensitivity and Photocatalytic Activity

Zinc oxide/reduced graphene oxide nanocomposites (ZnO/rGO) are synthesized via a simple one-pot solvothermal technique. The nanoparticle-nanorod turnability was achieved with the increase in GO additive, which was necessary to control the defect formation. The optimal defect in ZnO/rGO not only increased ZnO/rGO surface and carrier concentration, but also provided the alternative carrier pathway assisted with rGO sheet for electron-hole separation and prolonging carrier recombination. These properties are ideal for photodetection and photocatalytic applications. For photosensing properties, ZnO/rGO shows the improvement of photosensitivity compared with pristine ZnO from 1.51 (ZnO) to 3.94 (ZnO/rGO (20%)). Additionally, applying bending strain on ZnO/rGO enhances its photosensitivity even further, as high as 124% at r = 12.5 mm, due to improved surface area and induced negative piezoelectric charge from piezoelectric effect. Moreover, the photocatalytic activity with methylene blue (MB) was studied. It was observed that the rate of MB degradation was higher in presence of ZnO/rGO than pristine ZnO. Therefore, ZnO/rGO became a promising materials for different applications.

Improved responsivity performance of ZnO film ultraviolet photodetectors by vertical arrays ZnO nanowires with light trapping effect

The light trapping effect of zinc oxide (ZnO) ultraviolet photodetectors (UV PDs) has been established as a promising way to optimize the performance of optoelectronic devices. In this paper, we report a light trapping fabricated metal-semiconductor-metal structure, consisting of a ZnO nanowire array as a top layer light absorber supported by a ZnO film. The ZnO film is bridged between two interdigitated metal electrodes for collecting photo-generated carriers. In this connection, high-dense ZnO nanowires can be used as a light trapping unit and to transmit the photogenerated carriers towards the ZnO film. The photogenerated carriers diffuse along the longitudinal direction of the ZnO nanowire and then to the ZnO film and are collected by the applied bias electrode. Compared to present ZnO thin film UV PDs, our device has an effective light trapping effect and the enhancement of photo-generated carriers at the top interface by a ZnO nanowire array structure are highly beneficial to UV light detection as they can provide a long optical path and more surface area. In addition, when the device was connected with nanowires, a 10 times augment of responsivity appeared accompanied by a giant photo-to-dark current ratio (1.6 × 10³). This novel work not only enhanced fundamental improvement of nanowires to ZnO film UV PDs, but also provided a distinct contrast between light trapping UV PDs and ZnO film UV PDs.

Intermediate phase-assisted solution preparation of two dimensional CsPbCl3 perovskite for efficient ultraviolet photodetection

Fully-inorganic halide perovskites (HPs) have realized respectable progress in multiple optoelectronic applications. However, Cl-based fully-inorganic HPs that are ideal for ultraviolet (UV) photodetection applications in high demand still remain rarely explored mainly due to the poor solution processability compared with other counterparts. Here we propose a facile solution method to fabricate CsPbCl₃ with not only high crystallinity but also a two dimensional (2D) morphology for efficient UV photodetection. 2D Ruddlesden-Popper perovskites (RPPs) are firstly prepared as the intermediate phase, which habitually grow into microplates owing to an intrinsic 2D structure. Then Cs⁺ was introduced in the form of highly soluble cesium acetate to exchange with the organic cations in the RPPs to produce 2D CsPbCl₃ with preserved morphology and micron scale size. By this chemical route, the poor solubility issue can be addressed. All the procedures are conducted at room temperature in open air. The perfect band gap, high crystallinity and 2D morphology promise superior UV light sensing capability, one of the best overall performances featuring high responsivity, fast response speed, low driving voltages and good stability is obtained. This work is believed to fill in the "Cl-gap" for this promising class of material.

Zinc oxide ultraviolet photodetectors: rapid progress from conventional to self-powered photodetectors

Currently, the development of ultraviolet (UV) photodetectors (PDs) has attracted the attention of the research community because of the vast range of applications of photodetectors in modern society. A variety of wide-band gap nanomaterials have been utilized for UV detection to achieve higher photosensitivity. Specifically, zinc oxide (ZnO) nanomaterials have attracted significant attention primarily due to their additional properties such as piezo-phototronic and pyro-phototronic effects, which allow the fabrication of high-performance and low power consumption-based UV PDs. This article primarily focuses on the recent development of ZnO nanostructure-based UV PDs ranging from nanomaterials to architectural device design. A brief overview of the photoresponse characteristics of UV PDs and potential ZnO nanostructures is presented. Moreover, the recent development in self-powered PDs and implementation of the piezo-phototronic effect, plasmonic effect and pyro-phototronic effect for performance enhancement is highlighted. Finally, the research perspectives and future research direction related to ZnO nanostructures for next-generation UV PDs are summarized.

Solution-Processed Mg-Substituted ZnO Thin Films for Metal-Semiconductor-Metal Visible-Blind Photodetectors

The effects of Mg on the microstructural, optical, and electrical properties of sol-gel derived ZnO transparent semiconductor thin films and the photoelectrical properties of photodetectors based on MgxZn1−xO (where x = 0 to 0.3) thin films with the metal-semiconductor-metal (MSM) configuration were investigated in this study. All the as-synthesized ZnO-based thin films had a single-phase wurtzite structure and showed high average transmittance of 91% in the visible wavelength region. The optical bandgap of MgxZn1−xO thin films increased from 3.25 to 3.56 eV and the electrical resistivity of the films rose from 6.1 × 102 to 1.4 × 104 Ω·cm with an increase in Mg content from x = 0 to x = 0.3. Compared with those of the pure ZnO thin film, the PL emission peaks of the MgZnO thin films showed an apparent blue-shift feature in the UV and visible regions. The photo-detection capability was investigated under visible, UVA, and UVC light illumination. Linear I-V characteristics were obtained in these ZnO-based photodetectors under dark and light illumination conditions, indicating an ohmic contact between the Au electrodes and ZnO-based thin films. It was found that the pure ZnO photodetector exhibited the best photoconductivity gain, percentage of sensitivity, and responsivity under UVA illumination. Under UVC illumination, the photoconductivity gain and percentage of sensitivity of the MgZnO photodetectors were better than those of the pure ZnO photodetector.

Constructing a Green Light Photodetector on Inorganic/Organic Semiconductor Homogeneous Hybrid Nanowire Arrays with Remarkably Enhanced Photoelectric Response

We demonstrate that a novel photodetector is constructed by CdS/poly( p-phenylene vinylene) (PPV) homogeneous hybrid nanowire arrays via a simple template-assisted electrochemical codeposition approach. Owing to the well-matched energy levels between CdS and PPV, the recombination of photogenerated electrons and holes in CdS/PPV hybrid nanowire arrays is greatly inhibited. It is found that the homogeneous hybrid nanowire arrays exhibit remarkably enhanced photoelectric response and the ON/OFF ratio by 17 times compared to the individual CdS component. More importantly, the CdS/PPV hybrid nanowire arrays are observed with significant spectral selectivity especially for green light under 545 nm. In addition, a straight linear relationship is obtained between the ON/OFF ratios and the illumination intensities, implying that the quantitative detection of illumination intensity can be achieved. The new as-prepared homogeneous hybrid organic/inorganic semiconductor nanowire arrays have a bright prospect for applications in high-sensitivity and high-speed green photodetectors.

Fast response UV detection based on waveguide characteristics of vertically grown ZnO nanorods partially embedded in anodic alumina template

Zinc oxide (ZnO)-based ultraviolet (UV) detector has been fabricated and its photoresponse is studied in an out-of-plane contact configuration. Porous anodic aluminum oxide (AAO) template-based deposition method is adopted for the aligned and well-separated growth of ZnO nanorods (NRs). Through-hole in silicon (Si) by modified metal assisted chemical etching is used as a window for the electrochemical deposition of ZnO in the template and for out-of-plane electrical contacts during device analysis. The fabricated photodetector shows a fast response under UV (365 nm) light illumination, with rise and decay times of 31 ± 2 ms and 85 ± 3 ms, respectively. This fast response is analysed in terms of vertical growth and the waveguide nature of ZnO NRs embedded in anodic alumina. These results are further supported by a simulation comparing the electric field distribution of ZnO NR embedded in AAO with that of bare ZnO NR.

Studies of Effects of Calcination Temperature on the Crystallinity and Optical Properties of Ag-Doped ZnO Nanocomposites

Ag-doped ZnO nanocomposites are successfully synthesized at different calcination temperatures and times through a simple, effective, high-yield and low-cost mechanochemical combustion technique. Effects of calcination temperature on the crystallinity and optical properties of Ag/ZnO nanocomposites have been studied by X-ray diffraction (XRD), UV−visible diffuse reflectance spectroscopy (UV-DRS), photoluminescence spectroscopy (PL) and X-ray photoelectron spectroscopy (XPS). The XRD patterns of the synthesized Ag/ZnO exhibit a well-crystalline wurtzite ZnO crystal structure. The grain size of Ag/ZnO nanocomposites is found to be 19 and 46 nm at calcination temperatures of 400 °C and 700 °C, respectively. The maximum absorption in the UV region is obtained for Ag/ZnO nanocomposites synthesized at a calcination temperature of 500 °C for 3 h. The peak position of blue emissions is almost the same for the nanocomposites obtained at 300–700 °C calcination temperatures. The usual band edge emission in the UV is not obtained at 330 nm excitation. Band edge and blue band emissions are observed for the use of low excitation energy at 335–345 nm.

β-Ga2O3 nanorod arrays with high light-to-electron conversion for solar-blind deep ultraviolet photodetection

Vertically aligned nanorod arrays (NRAs), with effective optical coupling with the incident light and rapid electron transport for photogenerated carriers, have attracted much interest for photoelectric devices. Herein, the monoclinic β-Ga₂O₃ NRAs with an average diameter/length of 500 nm/1.287 μm were prepared by the hydrothermal and post-annealing method. Then a circular Ti/Au electrode was patterned on β-Ga₂O₃ NRAs to fabricate solar-blind deep ultraviolet photodetectors. At zero bias, the device shows a photoresponsivity (R_λ) of 10.80 mA W⁻¹ and a photo response time of 0.38 s under 254 nm light irradiation with a light intensity of 1.2 mW cm⁻², exhibiting a self-powered characteristic. This study presents a promising candidate for use in solar-blind deep ultraviolet photodetection with zero power consumption.

Vertically aligned β-Ga₂O₃ nanorod arrays with high light coupling and rapid electron transport were assembled for solar-blind deep UV detection.

Hollow multi-shell structured SnO2 with enhanced performance for ultraviolet photodetectors

Hollow multi-shell structured (HoMS) SnO₂ was utilized as an active material to enhance ultraviolet photodetector performance.

Highly efficient and flexible photodetector based on MoS2–ZnO heterostructures

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS₂) and tungsten diselenide (WSe₂), have recently attracted attention for their applicability as building blocks for fabricating advanced functional materials. In this study, a high quality hybrid material based on 2D TMD nanosheets and ZnO nanopatches was demonstrated. An organic promoter layer was employed for the large-scale growth of the TMD sheet, and atomic layer deposition (ALD) was utilized for the growth of ZnO nanopatches. Photodetectors based on 2D TMD nanosheets and ZnO nanopatches were successfully fabricated and investigated, which showed a high photoresponsivity of 2.7 A/W. Our novel approach is a promising and effective method for the fabrication of photodetectors with a new structure for application in TMD-based transparent and flexible optoelectronic devices.

Two-dimensional transition metal dichalcogenides (TMDs) such as molybdenum disulfide, have recently attracted attention for their applicability as building blocks for fabricating advanced functional materials.

Enhanced photocatalytic activity of a pine-branch-like ternary CuO/CuS/ZnO heterostructure under visible light irradiation

A pine-branch-like ternary CuO/CuS/ZnO heterostructure exhibits enhanced visible light photocatalytic ability toward organic dyes.

Wearable UV Sensor Based on Carbon Nanotube-Coated Cotton Thread

A fabric-compatible UV sensor is presented using a cellulose-based thread coated with single-wall carbon nanotube ink. Two-terminal resistive responses of the thread were measured upon exposure to UV, and the effects of intensity, wavelength, and on/off cycling were studied. The sensor was tested in the field under direct sunlight, demonstrating practical usability for a wearable/flexible UV sensor system. The results here confirm the potential for an inexpensive wearable sensor in contrast to the conventional rigid and bulky solid-state detectors.

Low temperature-processed ZnO thin films for p-n junction-based visible-blind ultraviolet photodetectors

Ultraviolet (UV) photodetectors have drawn extensive attention due to their numerous applications in both civilian and military areas including flame detection, UV sterilization, aerospace UV monitoring, missile early warning, and ultraviolet imaging. Zinc oxide (ZnO)-based UV detectors exhibit remarkable performance; however, many of them are not visible-blind, and the fabrication techniques involve a high-temperature annealing step. Here, we fabricated a p-n junction photodiode based on annealing-free ZnO thin films prepared from ZnO nanoparticles and N,N'-di(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (NPB). NPB was chosen due to its transparent nature in the visible region and high hole mobility. The ZnO nanoparticles and thin films were characterized by UV-visible absorption spectroscopy, atomic force microscopy (AFM), scanning electron microscopy (SEM), dynamic light scattering (DLS) particle size analysis, Fourier-transform infrared (FTIR) spectroscopy, photoluminescence spectroscopy, XRD and profilometry. The device exhibited responsivity of 0.037 A/W and an external quantum efficiency (EQE) of 12.86% at 5 V bias under 360 nm illumination. In addition, with no biasing, the device exhibited an on-off ratio of more than 103 and a linear dynamic range (LDR) of 63 dB. A high built-in potential at the ZnO/NPB interface could be the reason for this performance at zero bias. The rise and fall times were 156 ms and 319 ms, respectively. The results suggest that a visible-blind UV photodetector with acceptable performance can be fabricated using annealing-free ZnO films, which may lead to the realization of flexible detectors due to the low-temperature processes involved.

Investigation of Interface Effect on the Performance of CH3NH3PbCl3/ZnO UV Photodetectors

Recent investigations indicate that the performance of organic-inorganic perovskite optoelectronic devices can be improved by combining the perovskites and the inorganic materials. However, very few studies have focused on the investigation of perovskites/inorganic semiconductor hybrid UV photodetectors and their detailed performance-enhancement mechanism is still not very clear. In this work, a CH₃NH₃PbCl₃/ZnO UV photodetector has been first demonstrated and investigated. Both the photoresponsivity and response speed of the hybrid device are higher than those of pure CH₃NH₃PbCl₃ and ZnO devices. The photoluminescence and transient absorption spectra indicate that the photoinduced electron transfer between CH₃NH₃PbCl₃ and ZnO should be responsible for the performance enhancement of the hybrid device. In addition, the high crystal quality of CH₃NH₃PbCl₃ on ZnO film is another important reason for the excellent UV detection performance. Our findings in this work provide new insights into the intrinsic photophysics essential for perovskite optoelectronic devices.

Investigation of nanoscale voids in Sb-doped p-type ZnO nanowires

While it has multiple advantageous optoelectronic and piezoelectric properties, the application of zinc oxide has been limited by the lack of a stable p-type dopant. Recently, it was discovered that antimony doping can lead to stable p-type doping in ZnO, but one curious side effect of the doping process is the formation of voids inside the nanowire. While previously used as a signifier of successful doping, up until now, little research has been performed on these structures themselves. In this work, the effect of annealing on the size and microstructure of the voids was investigated using TEM and XRD, finding that the voids form around a region of Zn₇Sb₂O₁₂. Furthermore, using Raman spectroscopy, a new peak associated with successful doping was identified. The most surprising finding, however, was the presence of water trapped inside the nanowire, showing that this is actually a composite structure. Water was initially discovered in the nanowires using atom probe tomography, and verified using Raman spectroscopy.

Ultraviolet Detectors Based on Wide Bandgap Semiconductor Nanowire: A Review

Ultraviolet (UV) detectors have attracted considerable attention in the past decade due to their extensive applications in the civil and military fields. Wide bandgap semiconductor-based UV detectors can detect UV light effectively, and nanowire structures can greatly improve the sensitivity of sensors with many quantum effects. This review summarizes recent developments in the classification and principles of UV detectors, i.e., photoconductive type, Schottky barrier type, metal-semiconductor-metal (MSM) type, p-n junction type and p-i-n junction type. The current state of the art in wide bandgap semiconductor materials suitable for producing nanowires for use in UV detectors, i.e., metallic oxide, III-nitride and SiC, during the last five years is also summarized. Finally, novel types of UV detectors such as hybrid nanostructure detectors, self-powered detectors and flexible detectors are introduced.

Ferroelectric Localized Field-Enhanced ZnO Nanosheet Ultraviolet Photodetector with High Sensitivity and Low Dark Current

Zinc oxide (ZnO) nanosheets have demonstrated outstanding electrical and optical properties, which are well suited for ultraviolet (UV) photodetectors. However, they have a high density of intrinsically unfilled traps, and it is difficult to achieve p-type doping, leading to the poor performance for low light level switching ratio and a high dark current that limit practical applications in UV photodetection. Here, UV photodetectors based on ZnO nanosheets are demonstrated, whose performance is significantly improved by using a ferroelectric localized field. Specifically, the photodetectors have achieved a responsivity of up to 3.8 × 10⁵ A W^-1 , a detectivity of 4.4 × 10¹⁵ Jones, and a photocurrent gain up to 1.24 × 10⁶ . These device figures of merit are far beyond those of traditional ZnO ultraviolet photodetectors. In addition, the devices' initial dark current can be easily restored after continuous photocurrent measurement by using a positive gate voltage pulse. This study establishes a new approach to produce high-sensitivity and low-dark-current ultraviolet photodetectors and presents a crucial step for further practical applications.

Skin-inspired highly stretchable and conformable matrix networks for multifunctional sensing

Mechanosensation electronics (or Electronic skin, e-skin) consists of mechanically flexible and stretchable sensor networks that can detect and quantify various stimuli to mimic the human somatosensory system, with the sensations of touch, heat/cold, and pain in skin through various sensory receptors and neural pathways. Here we present a skin-inspired highly stretchable and conformable matrix network (SCMN) that successfully expands the e-skin sensing functionality including but not limited to temperature, in-plane strain, humidity, light, magnetic field, pressure, and proximity. The actualized specific expandable sensor units integrated on a structured polyimide network, potentially in three-dimensional (3D) integration scheme, can also fulfill simultaneous multi-stimulus sensing and achieve an adjustable sensing range and large-area expandability. We further construct a personalized intelligent prosthesis and demonstrate its use in real-time spatial pressure mapping and temperature estimation. Looking forward, this SCMN has broader applications in humanoid robotics, new prosthetics, human–machine interfaces, and health-monitoring technologies.

Electronic skins have been developed to emulate human sensory systems, but simultaneous detection of multiple stimuli remains a big challenge due to coupling of electronic signals. Here, Hua et al. overcome this problem in a stretchable and conformable matrix network integrated with seven different modes.

Synthesis of silver sulfide nanoparticles and their photodetector applications

Silver sulfide nanoparticles (Ag₂S NPs) are currently being explored as infrared active nanomaterials that can provide environmentally stable alternatives to heavy metals such as lead. In this paper, we describe the novel synthesis of Ag₂S NPs by using a sonochemistry method and the fabrication of photodetector devices through the integration of Ag₂S NPs atop a graphene sheet. We have also synthesized Li-doped Ag₂S NPs that exhibited a significantly enhanced photodetector sensitivity via their enhanced absorption ability in the UV-NIR region. First-principles calculations based on a density functional theory formalism indicated that Li-doping produced a dramatic enhancement of NIR photoluminescence of the Ag₂S NPs. Finally, high-performance photodetectors based on CVD graphene and Ag₂S NPs were demonstrated and investigated; the hybrid photodetectors based on Ag₂S NPs and Li-doped Ag₂S NPs exhibited a photoresponse of 2723.2 and 4146.0 A W⁻¹ respectively under a light exposure of 0.89 mW cm⁻² at 550 nm. Our novel approach represents a promising and effective method for the synthesis of eco-friendly semiconducting NPs for photoelectric devices.

Silver sulfide nanoparticles (Ag₂S NPs) are currently being explored as infrared active nanomaterials that can provide environmentally stable alternatives to heavy metals such as lead.

Self-Powered Ultraviolet Photodetectors Driven by Built-In Electric Field

Self-powered ultraviolet (UV) photodetectors, which have vast applications in the military and for civilian purposes, have become particularly attractive in recent years due to their advantages of high sensitivity, ultrasmall size, and low power consumption. In particular, self-powered UV photodetectors driven by a built-in electric field cannot only detect UV signals but also be powered by the incident signals instead of external power. In this concept, the key issues and most recent developments on photovoltaic type UV photodetectors driven by p-n homojunction, heterojunction, and Schottky junction are surveyed. This should generate extensive interest in this field and encourage more researchers to engage in and tackle the scientific challenges.

Visible-Blind UV Photodetector Based on Single-Walled Carbon Nanotube Thin Film/ZnO Vertical Heterostructures

Ultraviolet (UV) photodetectors based on heterojunctions of conventional (Ge, Si, and GaAs) and wide bandgap semiconductors have been recently demonstrated, but achieving high UV sensitivity and visible-blind photodetection still remains a challenge. Here, we utilized a semitransparent film of p-type semiconducting single-walled carbon nanotubes (SC-SWNTs) with an energy gap of 0.68 ± 0.07 eV in combination with a molecular beam epitaxy grown n-ZnO layer to build a vertical p-SC-SWNT/n-ZnO heterojunction-based UV photodetector. The resulting device shows a current rectification ratio of 10³, a current photoresponsivity up to 400 A/W in the UV spectral range from 370 to 230 nm, and a low dark current. The detector is practically visible-blind with the UV-to-visible photoresponsivity ratio of 10⁵ due to extremely short photocarrier lifetimes in the one-dimensional SWNTs because of strong electron-phonon interactions leading to exciton formation. In this vertical configuration, UV radiation penetrates the top semitransparent SC-SWNT layer with low losses (10-20%) and excites photocarriers within the n-ZnO layer in close proximity to the p-SC-SWNT/n-ZnO interface, where electron-hole pairs are efficiently separated by a high built-in electric field associated with the heterojunction.

Synthesis of Zn1−xCdxO Nanoparticles by Co-Precipitation: Structural, Optical and Photodetection Analysis

Zinc oxide (ZnO) is a wide bandgap semiconductor with excellent photoresponse in ultra-violet (UV) regime. Tuning the bandgap of ZnO by alloying with cadmium can shift its absorption cutoff wavelength from UV to visible (Vis) region. Our work aims at synthesis of Zn[Formula: see text]CdxO nanoparticles by co-precipitation method for the fabrication of photodetector. The properties of nanoparticles were analyzed using X-ray diffractometer, UV–Vis spectrometer, scanning electron microscope and energy dispersive spectrometer. The incorporation of cadmium without altering the wurtzite structure resulted in the red shift in the absorption edge of ZnO. Further, the photoresponse characteristics of Zn[Formula: see text]CdxO nanopowders were investigated by fabricating photodetectors. It has been found that with Cd alloying the photosensitivity was increased in the UVA-violet as well in the blue region.

Color-selective photodetection from intermediate colloidal quantum dots buried in amorphous-oxide semiconductors

We report color-selective photodetection from intermediate, monolayered, quantum dots buried in between amorphous-oxide semiconductors. The proposed active channel in phototransistors is a hybrid configuration of oxide-quantum dot-oxide layers, where the gate-tunable electrical property of silicon-doped, indium-zinc-oxide layers is incorporated with the color-selective properties of quantum dots. A remarkably high detectivity (8.1 × 10¹³ Jones) is obtained, along with three major findings: fast charge separation in monolayered quantum dots; efficient charge transport through high-mobility oxide layers (20 cm² V^-1 s^-1); and gate-tunable drain-current modulation. Particularly, the fast charge separation rate of 3.3 ns^-1 measured with time-resolved photoluminescence is attributed to the intermediate quantum dots buried in oxide layers. These results facilitate the realization of efficient color-selective detection exhibiting a photoconductive gain of 10⁷, obtained using a room-temperature deposition of oxide layers and a solution process of quantum dots. This work offers promising opportunities in emerging applications for color detection with sensitivity, transparency, and flexibility.The development of highly sensitive photodetectors is important for image sensing and optical communication applications. Cho et al., report ultra-sensitive photodetectors based on monolayered quantum dots buried in between amorphous-oxide semiconductors and demonstrate color-detecting logic gates.

ZnO Film UV Photodetector with Enhanced Performance: Heterojunction with CdMoO4 Microplates and the Hot Electron Injection Effect of Au Nanoparticles

A novel CdMoO₄ -ZnO composite film is prepared by spin-coating CdMoO₄ microplates on ZnO film and is constructed as a heterojunction photodetector (PD). With an optimized loading amount of CdMoO₄ microplates, this composite film PD achieves a ≈18-fold higher responsivity than pure ZnO film PD at 5 V bias under 350 nm (0.15 mW cm^-2 ) UV light illumination, and its decay time shortens to half of the original value. Furthermore, Au nanoparticles are then deposited to modify the CdMoO₄ -ZnO composite film, and the as-constructed photodetector with an optimized deposition time of Au nanoparticles yields an approximately two-fold higher photocurrent under the same condition, and the decay time reduces by half. The introduced CdMoO₄ microplates form type-II heterojunctions with ZnO film and improve the photoelectric performance. The hot electrons from Au nanoparticles are injected into the CdMoO₄ -ZnO composite film, leading to the increased photocurrent. When the light is off, the Schottky barriers formed between Au nanoparticles and CdMoO₄ -ZnO composite film block the carrier transportation and accelerate the decay process of current. The study on Au-nanoparticle-modified CdMoO₄ -ZnO composite film provides a facile method to construct ZnO film based PD with novel structure and high photoelectric performance.

Comparative Study of Photoresponse from Vertically Grown ZnO Nanorod and Nanoflake Films

Zinc oxide (ZnO) based ultraviolet (UV) photodetectors have been fabricated and their photoresponse is studied in Schottky diode configuration. A cost-effective single-step electrochemical deposition method is adopted for the growth of ZnO film with nanorod (NR) and nanoflake morphology. A comparative study of the photodetection parameters based on surface trap states, crystallinity, and strain is done for two different morphology films. Significant photocurrent enhancement is observed for the nanorods under UV light, with appreciable photoresponse in the blue region. A template-assisted growth of ZnO NR film is proposed for better photoresponse and sensitivity of the device, useful for various optoelectronic applications.

Quantum Dots-Facilitated Printing of ZnO Nanostructure Photodetectors with Improved Performance

A nanocomposite ink composed of zinc oxide precursor (ZnOPr) and crystalline ZnO quantum dots (ZnOPrQDs) has been explored for printing high-performance ultraviolet (UV) photodetectors. The performance of the devices has been compared with their counterparts' printed from ZnOPr ink without ZnO QDs. Remarkably, higher UV photoresponsivity of 383.6 A/W and the on/off ratio of 2470 are observed in the former, which are significantly better than 14.7 A/W and 949 in the latter. The improved performance is attributed to the increased viscosity in the nanocomposite ink to enable a nanoporous structure with improved crystallinity and surface-to-volume ratio. This is key to enhanced surface electron-depletion effect for higher UV responsivity and on/off ratio. In addition, the QD-assisted printing provides a simple and robust method for printing high-performance optoelectronics and sensors.

Electrically driven deep ultraviolet MgZnO lasers at room temperature

Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. In this paper, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM) random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29~33 A/cm² are achieved. Numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.

An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure

ZnO nanostructure-based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV-vis-NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV-vis-NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.

Highly Wavelength-Selective Enhancement of Responsivity in Ag Nanoparticle-Modified ZnO UV Photodetector

We proposed and demonstrated Ag nanoparticles (NPs)-decorated ZnO photodetectors for UV light sensing. After decoration of their surface with random Ag NPs, the dark current density of ZnO UV photodetectors decreases obviously. Moreover, the device exhibits an obvious increase in peak responsivity at around 380 nm, which can be attributed to the narrow-band quadrupole plasmon resonance of Ag NPs in the UV range. Meanwhile, the responsivity at the other wavelengths decreases a lot. As a result, the response peak becomes more significant, and the response of the devices presents an excellent wavelength selectivity after covering with Ag NPs. The detailed mechanism for this phenomenon was explained. We believe that our findings would open a way to harness the high-order plasmon modes in the field of UV optoelectronic devices.

Three-dimensional nano-heterojunction networks: a highly performing structure for fast visible-blind UV photodetectors

Visible-blind ultraviolet photodetectors are a promising emerging technology for the development of wide bandgap optoelectronic devices with greatly reduced power consumption and size requirements. A standing challenge is to improve the slow response time of these nanostructured devices. Here, we present a three-dimensional nanoscale heterojunction architecture for fast-responsive visible-blind UV photodetectors. The device layout consists of p-type NiO clusters densely packed on the surface of an ultraporous network of electron-depleted n-type ZnO nanoparticles. This 3D structure can detect very low UV light densities while operating with a near-zero power consumption of ca. 4 × 10^-11 watts and a low bias of 0.2 mV. Most notably, heterojunction formation decreases the device rise and decay times by 26 and 20 times, respectively. These drastic enhancements in photoresponse dynamics are attributed to the stronger surface band bending and improved electron-hole separation of the nanoscale NiO/ZnO interface. These findings demonstrate a superior structural design and a simple, low-cost CMOS-compatible process for the engineering of high-performance wearable photodetectors.

Technical Note: A novel interdigital transparent thin-film detector for medical dosimetry

PURPOSE

A new type of thin-film interdigital detector (TFID) for medical dosimetry is investigated. The focus of this study was to characterize the detector response as a function of detector geometry in an attempt to optimize it and to understand the underlying radio-electrical effects leading to signal formation.

METHODS

We characterize the detector response to kilovoltage x-ray beams used in fluoroscopy and computed tomography. Each element (pixel) of the detector is composed of conductive intercombing digits deposited on a thin-film dielectric substrate by nanofabrication or using a printing process. The detector is practically transparent to x-ray radiation, yet it generates sufficient signal for many types of medical dosimetry and quality assurance tasks. The thin-film detector has negligible surface mass density (about 2.5 mg/cm² for a 1-μm-thick Cu TFID on 12.5-μm-thick Kapton substrate) and it is conformable to curved geometries found in the medical x-ray equipment or on patient skin surface. The prototype detectors were made using glass and Kapton substrates with copper-copper and copper-aluminum interdigits. Although in principle the detector can be operated without any external bias voltage when the digits are made of disparate materials (e.g., Cu-Al), we also characterized the detector properties under small electric fields via its current-voltage curve (IV curve).

RESULTS

Using 120 kVp, 25 mA x-ray beam with 10V external bias, the Cu-Cu detector response was about 0.2 nA/cm² . We also measured a one-dimensional transmitted dose profile for a phantom under fluoroscopic x-rays and found relatively good agreement with a commercial photodiode (XR R12-0191, IBA Dosimetry).

CONCLUSIONS

We demonstrated the potential of TFID detectors for kilovoltage dosimetry and we defined its optimal geometry. For digits made of the same material and for digit width equal to the separation between them, we found that the thin-film detector has optimal performance when the distance between the digit centers is about 1 mm, while in the fixed digit width cases we observed that the signal is higher when their edge-to-edge separation is as small as possible.