2D Materials for Optical Modulation: Challenges and Opportunities

Transition metal dichalcogenides integrated waveguide modulator and attenuator in silicon nitride platform

Embedding transition metal dichalcogenides (TMDs) into optical devices enhance the light-matter interaction, which holds a great promise for designing compact integrated photonic components. The chemical composition and thickness of TMDs affect their electronic and optical properties. The optical properties demonstrate stable and strong gate tunable optical response near the excitonic transitions. These materials are, therefore, promising candidates for designing electro-optic modulators and attenuators. Here, an electro-absorption modulator is investigated based on integrating different TMD monolayers on silicon nitride waveguides near the excitonic binding energy. A comparison of absorption changes due to electrostatically induced charges in MoS₂, MoSe₂, WS₂, WSe_2, and graphene has been presented for modulator design. The results show that with the confinement factor of about 0.10% in the monolayer TMDs, the modulation strength is 10x higher in WS₂ as compared to the graphene-based modulator design. The WS₂ based modulator shows the highest modulation strength with an improvement by a factor of 5 as compared to Mo based designs. Further, the change in the spectral response of these materials with thickness and chemical composition has been exploited for the design of attenuator. A micro-opto-mechanical system technology with TMD integrated supersubstrate above a Si₃N₄ waveguide affecting the optical response is investigated. By replacing the TMD in the supersubstrate with Se atom instead of S in the MX₂ and WX₂ compound, the attenuation is shifted from visible to near-infrared range allowing tuning from 620 to 750 nm. The tuning of the attenuation wavelength will help the designer choose the best material for visible light photonic applications.

CVD-Bi2Te3 as a saturable absorber for various solitons in a mode-locked Er-doped fiber laser

In this work, we report about high energy and various solitons' operation by using high-efficiency topological insulator bismuth telluride (Bi₂Te₃) nanofilms as broadband saturable absorbers in the passively mode-locked Er-doped fiber laser. The Bi₂Te₃ film was successfully synthesized by chemical vapor deposition (CVD). Excellent characteristics of the dark-bright pulse pairs, bright pulses, and multiharmonics have been investigated experimentally by adjusting the polarization state. At the same time, the maximum average output power was 40.18 mW, and the single-pulse energy was 20.91 nJ. As we all know, it is the various solitons of the first generation with large pulse energy in an Er-doped fiber laser with Bi₂Te₃ as saturable absorber. The experimental results show that CVD Bi₂Te₃ can be used as an excellent candidate in mode-locked fiber lasers.

A Single Chiral Nanoparticle Induced Valley Polarization Enhancement

Valley polarization is among the most critical attributes of atomically thin materials. However, increasing contrast from monolayer transition metal dichalcogenides (TMDs) has so far been challenging. In this work, a large degree of circular polarization up to 45% from a monolayer WS₂ is achieved at room temperature by using a single chiral plasmonic nanoparticle. The increased contrast is attributed to the selective enhancement of both the excitation and the emission rate having one particular handedness of the circular polarization, together with accelerated radiative recombination of valley excitons due to the Purcell effect. The experimental results are corroborated by the optical simulation using the finite-difference time-domain (FDTD) method. Additionally, the single chiral nanoparticle enables the observation of valley-polarized luminescence with a linear excitation. The results provide a promising pathway to enhance valley contrast from monolayer TMDs and utilize them for nanophotonic devices.

Direct femtosecond laser ablation of large-area TaSe2, SnS2, and TiS2 thick films by a back ablation procedure

Direct ablation of large-area graphene-like two-dimensional (2D) materials, i.e., tantalum diselenide (TaSe₂), stannic disulfide (SnS₂), and titanium disulfide (TiS₂), by the back ablation method with a femtosecond laser with a repetition rate of 50 MHz and pulse width of 200 fs is studied for the first time to our knowledge. The ablation thresholds of the three kinds of materials are discussed. In addition, the optimization and ablation of narrow grooves on the films are demonstrated. Our work demonstrates the direct femtosecond laser ablation processing of the graphene-like 2D-material films and the potential of 2D-material-film-based devices.

ZrSe2 nanosheet as saturable absorber for soliton operations within an Er-doped passive mode-locked fiber laser

Two-dimensional materials have extensively promoted the development of ultrafast photonics in the past decade. In our work, the saturable absorption properties of ZrSe₂ were presented. The saturation intensity, modulation depth, and nonlinear absorption coefficient of the ZrSe₂ saturable absorber (SA) are about 13.14MW/cm², 6.09%, and 1.85∗10^-1cm/GW. In the experiment, based on the ZrSe₂ SA, two types of solitons were recorded. A conventional soliton with a pulse width of 985 fs and a three-pulse bound state soliton have been obtained. Our experiment reveals that ZrSe₂ can be employed for generating multiple ultrafast soliton generations and possess promising application in ultrafast photonics.

Niobium Carbide MXenes with Broad-Band Nonlinear Optical Response and Ultrafast Carrier Dynamics

Exploring the nonlinear photonics of emerging promising two-dimensional (2D) materials like MXenes will boost the development of broad-band optoelectronic and photonic applications. In this paper, the broad-band nonlinear optical response and the excited-carrier dynamics of an emerging MXene, Nb₂C, are systematically investigated for the wavelength range of visible to the near-infrared band. The obtained nonlinear optical response shows a wavelength and excitation intensity dependence. The imaginary part of the third-order nonlinear optical susceptibility Imχ⁽³⁾ and figure of merit were found to be -1.4 × 10^-10 esu and 7.5 × 10^-12 esu cm, respectively. The interesting nonlinear absorption response inversion properties (e.g., a shift from saturable absorption to two-photon absorption) of Nb₂C nanosheets in the near-infrared promise possible important applications in nonlinear photonics, such as an optical switch. We also demonstrate that the wavelength-dependent relaxation times consist of two different relaxation components, that is, time constants in which one is hundreds of femtoseconds and the other is several picoseconds. Our results indicate promising potential in near-infrared nanophotonic applications of 2D Nb₂C and offer a promising candidate for 2D-material-based nanophotonic devices and beyond.

Active terahertz time differentiator using piezoelectric micromachined ultrasonic transducer array

The rapid growth of information technology is closely linked to our ability to modulate and demodulate a signal, whether in the frequency or in the time domain. Recent demonstrations of terahertz (THz) modulation involve active semiconductor metamaterial surfaces or use of a grating-based micromirror for frequency offset tuning. However, a wideband and active differentiator in the THz frequency band is yet to be demonstrated. Here, we propose a simple method to differentiate a THz pulse by inducing tiny phase changes on the THz beam path using a piezoelectric micromachined ultrasonic transducer array. We precisely demonstrate that the modulated THz signal detected after the piezoelectric device is proportional to the first-order derivative of the THz pulse. The proposed technique will be able to support a wide range of THz applications, such as peak detection schemes for telecommunication systems.

2D materials beyond graphene toward Si integrated infrared optoelectronic devices

Since the discovery of graphene in 2004, it has become a worldwide hot topic due to its fascinating properties. However, the zero band gap and weak light absorption of graphene strictly restrict its applications in optoelectronic devices. In this regard, semiconducting two-dimensional (2D) materials are thought to be promising candidates for next-generation optoelectronic devices. Infrared (IR) light has gained intensive attention due to its vast applications, including night vision, remote sensing, target acquisition, optical communication, etc. Consequently, the generation, modulation, and detection of IR light are crucial for practical applications. Due to the van der Waals interaction between 2D materials and Si, the lattice mismatch of 2D materials and Si can be neglected; consequently, the integration process can be achieved easily. Herein, we review the recent progress of semiconducting 2D materials in IR optoelectronic devices. Firstly, we introduce the background and motivation of the review. Then, the suitable materials for IR applications are presented, followed by a comprehensive review of the applications of 2D materials in light emitting devices, optical modulators, and photodetectors. Finally, the problems encountered and further developments are summarized. We believe that milestone investigations of IR optoelectronics based on 2D materials beyond graphene will emerge soon, which will bring about great industrial revelations in 2D material-based integrated nanodevice commercialization.

2D Material Optoelectronics for Information Functional Device Applications: Status and Challenges

Graphene and the following derivative 2D materials have been demonstrated to exhibit rich distinct optoelectronic properties, such as broadband optical response, strong and tunable light-mater interactions, and fast relaxations in the flexible nanoscale. Combining with optical platforms like fibers, waveguides, grating, and resonators, these materials has spurred a variety of active and passive applications recently. Herein, the optical and electrical properties of graphene, transition metal dichalcogenides, black phosphorus, MXene, and their derivative van der Waals heterostructures are comprehensively reviewed, followed by the design and fabrication of these 2D material-based optical structures in implementation. Next, distinct devices, ranging from lasers to light emitters, frequency convertors, modulators, detectors, plasmonic generators, and sensors, are introduced. Finally, the state-of-art investigation progress of 2D material-based optoelectronics offers a promising way to realize new conceptual and high-performance applications for information science and nanotechnology. The outlook on the development trends and important research directions are also put forward.

Graphene-based all-optical modulators

All-optical devices, which are utilized to process optical signals without electro-optical conversion, play an essential role in the next generation ultrafast, ultralow power-consumption optical information processing systems. To satisfy the performance requirement, nonlinear optical materials that are associated with fast response, high nonlinearity, broad wavelength operation, low optical loss, low fabrication cost, and integration compatibility with optical components are required. Graphene is a promising candidate, particularly considering its electrically or optically tunable optical properties, ultrafast large nonlinearity, and high integration compatibility with various nanostructures. Thus far, three all-optical modulation systems utilize graphene, namely free-space modulators, fiber-based modulators, and on-chip modulators. This paper aims to provide a broad view of state-of-the-art researches on the graphene-based all-optical modulation systems. The performances of different devices are reviewed and compared to present a comprehensive analysis and perspective of graphene-based all-optical modulation devices.

Infrared Nanoimaging of Surface Plasmons in Type-II Dirac Semimetal PtTe2 Nanoribbons

Topological Dirac semimetals made of two-dimensional transition-metal dichalcogenides (TMDCs) have attracted enormous interest for use in electronic and optoelectronic devices because of their electron transport properties. As van der Waals materials with a strong interlayer interaction, these semimetals are expected to support layer-dependent plasmonic polaritons yet to be revealed experimentally. Here, we demonstrate the apparent retardation and attenuation of mid-infrared (MIR) plasmonic waves in type-II Dirac semimetal platinum tellurium (PtTe₂) nanoribbons and nanoflakes by near-field nanoimaging. The attenuated dispersion relations for the plasmonic modes in the PtTe₂ nanoribbons (15-25 nm thick) extracted from the near-field standing-wave patterns are applied for the fitting of PtTe₂ permittivity in the MIR regime, indicating that both free carriers and Dirac fermions are involved in MIR light-matter interaction in PtTe₂. The annihilation of plasmonic modes in the ultrathin (<10 nm) PtTe₂ is observed and analyzed, which manifests no near-field resonant pattern due to the intrinsic layer-dependent optoelectronic properties of PtTe₂. These results could pave a potential wave for MIR photodetection and modulation with TMDC semimetals.

Efficient All-Optical Plasmonic Modulators with Atomically Thin Van Der Waals Heterostructures

All-optical modulators are attracting significant attention due to their intrinsic perspective on high-speed, low-loss, and broadband performance, which are promising to replace their electrical counterparts for future information communication technology. However, high-power consumption and large footprint remain obstacles for the prevailing nonlinear optical methods due to the weak photon-photon interaction. Here, efficient all-optical mid-infrared plasmonic waveguide and free-space modulators in atomically thin graphene-MoS₂ heterostructures based on the ultrafast and efficient doping of graphene with the photogenerated carrier in the monolayer MoS₂ are reported. Plasmonic modulation of 44 cm^-1 is demonstrated by an LED with light intensity down to 0.15 mW cm^-2 , which is four orders of magnitude smaller than the prevailing graphene nonlinear all-optical modulators (≈10³ mW cm^-2 ). The ultrafast carrier transfer and recombination time of photogenerated carriers in the heterostructure may achieve ultrafast modulation of the graphene plasmon. The demonstration of the efficient all-optical mid-infrared plasmonic modulators, with chip-scale integrability and deep-sub wavelength light field confinement derived from the van der Waals heterostructures, may be an important step toward on-chip all-optical devices.

Ultrahigh Responsivity Photodetectors of 2D Covalent Organic Frameworks Integrated on Graphene

2D materials exhibit superior properties in electronic and optoelectronic fields. The wide demand for high-performance optoelectronic devices promotes the exploration of diversified 2D materials. Recently, 2D covalent organic frameworks (COFs) have emerged as next-generation layered materials with predesigned π-electronic skeletons and highly ordered topological structures, which are promising for tailoring their optoelectronic properties. However, COFs are usually produced as solid powders due to anisotropic growth, making them unreliable to integrate into devices. Here, by selecting tetraphenylethylene monomers with photoelectric activity, elaborately designed photosensitive 2D-COFs with highly ordered donor-acceptor topologies are in situ synthesized on graphene, ultimately forming COF-graphene heterostructures. Ultrasensitive photodetectors are successfully fabricated with the COF_ETBC-TAPT -graphene heterostructure and exhibited an excellent overall performance with a photoresponsivity of ≈3.2 × 10⁷ A W^-1 at 473 nm and a time response of ≈1.14 ms. Moreover, due to the high surface area and the polarity selectivity of COFs, the photosensing properties of the photodetectors can be reversibly regulated by specific target molecules. The research provides new strategies for building advanced functional devices with programmable material structures and diversified regulation methods, paving the way for a generation of high-performance applications in optoelectronics and many other fields.

Photocarrier-Induced Active Control of Second-Order Optical Nonlinearity in Monolayer MoS2

Atomically thin transition metal dichalcogenides (TMDs) in their excited states can serve as exceptionally small building blocks for active optical platforms. In this scheme, optical excitation provides a practical approach to control light-TMD interactions via the photocarrier generation, in an ultrafast manner. Here, it is demonstrated that via a controlled generation of photocarriers the second-harmonic generation (SHG) from a monolayer MoS₂ crystal can be substantially modulated up to ≈55% within a timeframe of ≈250 fs, a set of performance characteristics that showcases the promise of low-dimensional materials for all-optical nonlinear data processing. The combined experimental and theoretical study suggests that the large SHG modulation stems from the correlation between the second-order dielectric susceptibility χ⁽²⁾ and the density of photoexcited carriers in MoS₂ . Indeed, the depopulation of the conduction band electrons, at the vicinity of the high-symmetry K/K' points of MoS₂ , suppresses the contribution of interband electronic transitions in the effective χ⁽²⁾ of the monolayer crystal, enabling the all-optical modulation of the SHG signal. The strong dependence of the second-order optical response on the density of photocarriers reveals the promise of time-resolved nonlinear characterization as an alternative route to monitoring carrier dynamics in excited states of TMDs.

Tunable metasurfaces for visible and SWIR applications

Demand on optical or photonic applications in the visible or short-wavelength infrared (SWIR) spectra, such as vision, virtual or augmented displays, imaging, spectroscopy, remote sensing (LIDAR), chemical reaction sensing, microscopy, and photonic integrated circuits, has envisaged new type of subwavelength-featured materials and devices for controlling electromagnetic waves. The study on metasurfaces, of which the thickness is either comparable to or smaller than the wavelength of the considered incoming electromagnetic wave, has been grown rapidly to embrace the needs of developing sub 100-micron active photonic pixelated devices and their arrayed form. Meta-atoms in metasurfaces are now actively controlled under external stimuli to lead to a large phase shift upon the incident light, which has provided a huge potential for arrayed two-dimensional active optics. This short review summarizes actively tunable or reconfigurable metasurfaces for the visible or SWIR spectra, to account for the physical operating principles and the current issues to overcome.

2D materials towards ultrafast photonic applications

Two-dimensional materials are now excelling in yet another arena of ultrafast photonics, including optical modulation through optical limiting/mode-locking, photodetectors, optical communications, integrated miniaturized all-optical devices, etc.

All-Optical Tuning of Light in WSe2-Coated Microfiber

The tungsten diselenide (WSe₂) has attracted considerable interest owing to their versatile applications, such as p-n junctions, transistors, fiber lasers, spintronics, and conversion of solar energy into electricity. We demonstrate all-optical tuning of light in WSe₂-coated microfiber (MF) using WSe₂'s broad absorption bandwidth and thermo-optic effect. The transmitted optical power (TOP) can be tuned using external incidence pump lasers (405, 532, and 660 nm). The sensitivity under 405-nm pump light excitation is 0.30 dB/mW. A rise/fall time of ~ 15.3/16.9 ms is achieved under 532-nm pump light excitation. Theoretical simulations are performed to investigate the tuning mechanism of TOP. The advantages of this device are easy fabrication, all-optical control, high sensitivity, and fast response. The proposed all-optical tunable device has potential applications in all-optical circuitry, all-optical modulator, and multi-dimensionally tunable optical devices, etc.

General, Vertical, Three-Dimensional Printing of Two-Dimensional Materials with Multiscale Alignment

Two-dimensional (2D) materials (e.g., boron nitride (BN), graphene, and MoS₂) have great potential in emerging energy, environmental, and electronics applications. Assembly of 2D materials into vertically aligned structures is highly desirable (e.g., low tortuosity for rapid ion transport in fast charging-discharging batteries, guiding thermal transport for efficient thermal management), yet extremely challenging due to the energetically unfavorable in processing. Herein, we reported a general three-dimensional (3D) printing method to fabricate vertically aligned 2D materials in multiscale, using BN nanosheet as the proof-of-concept. The 3D-printed macroscale rods are composed of vertically aligned BN nanosheets at the nanoscale. The formation of the hierarchical aligned structure is enabled by the optimized ink that holds a significant shear-thinning behavior and an ultrahigh storage modulus, as identified at a narrow region in the printability diagram. The resulting vertically aligned multiscale structure with 2D nanosheets demonstrated an outstanding through-plane thermal conductivity, up to 5.65 W m^-1 K^-1, significantly higher than the value of conventional BN based structures where the sheets are horizontally aligned. The vertical 3D printing of 2D BN nanosheets can be expanded to other 2D materials in constructing hierarchically aligned structures for a range of emerging technologies such as batteries, membranes, and structural materials.

Tuning silicon-rich nitride microring resonances with graphene capacitors for high-performance computing applications

We demonstrate the potential of a graphene capacitor structure on silicon-rich nitride micro-ring resonators for multitasking operations within high performance computing. Capacitor structures formed by two graphene sheets separated by a 10 nm insulating silicon nitride layer are considered. Hybrid integrated photonic structures are then designed to exploit the electro-absorptive operation of the graphene capacitor to tuneably control the transmission and attenuation of different wavelengths of light. By tuning the capacitor length, a shift in the resonant wavelength is produced giving rise to a broadband multilevel photonic volatile memory. The advantages of using silicon-rich nitride as the waveguiding material in place of the more conventional silicon nitride (Si₃N₄) are shown, with a doubling of the device's operational bandwidth from 31.2 to 62.41 GHz achieved while also allowing a smaller device footprint. A systematic evaluation of the device's performance and energy consumption is presented. A difference in the extinction ratio between the ON and OFF states of 16.5 dB and energy consumptions of <0.3 pJ/bit are obtained. Finally, it has been demonstrated that increasing the permittivity of the insulator layer in the capacitor structure, the energy consumption per bit can be reduced even further. Overall, the resonance tuning enabled by the novel graphene capacitor makes it a key component for future multilevel photonic memories and optical routing in high performance computing.

Simulation of tuning graphene plasmonic behaviors by ferroelectric domains for self-driven infrared photodetector applications

We demonstrate a tunable longwave infrared photodetector with ultra-high sensitivity based on graphene surface plasmon polaritons controlled by ferroelectric domains. The simulated results show that the photodetector shows a tunable absorption peak, modulated by periodically polarized ferroelectric domains at the nanoscale, with an ultra-high responsivity up to 7.62 × 10⁶ A W^-1 and a detectivity of ∼6.24 × 10¹³ Jones (Jones = cm Hz^1/2 W^-1) in the wavelengths ranging from 5 to 20 μm at room temperature. The potential mechanism for the prominent performances of the proposed photodetector can be attributed to the highly confined graphene surface plasmons excited by the local electrical field across the interface of the graphene and ferroelectric layer resonant to the incident wavelength, which could be easily controlled by the features of the ferroelectric domains. Compared with the silicon-based graphene plasmonic photodetector using a complex process of micro-nano fabrication, the proposed photodetector provides the advantages of a more convenient and controllable technique without the need for patterning graphene, and lower energy consumption due to the non-volatile properties of the ferroelectrics without an additional contact electrode. The tunable spectral response and the ultra-high responsivity make the graphene plasmonic photodetector tuned by the ferroelectric domains promising in practical applications of micro-spectrometers and other light sensing devices.

Broadband Nonlinear Optical Response of Single-Crystalline Bismuth Thin Film

Bismuth (Bi), a topological material, where many interesting condensed matter phenomena have been observed, possesses unique physical properties when its thickness is reduced to thin film. Here, we prepared the highly stable, single-crystalline, continuous Bi thin film via the vapor deposition (VD) method and found that the Bi thin film can exhibit broadband, ultrafast nonlinear optical response with low saturable intensity ranging from the near-infrared to mid-infrared spectral range under strong excitation. Moreover, we demonstrated that the Bi thin film was favorable to act as a nonlinear pulse modulator toward a high performance pulsed laser operating in optical communication and mid-infrared wavelengths. The experimental results highlight the prospects of Bi thin film as broadband pulsed modulators and may open new avenues toward advanced Bi-based broadband photonic devices.

Chemical Vapor Transport Reactions for Synthesizing Layered Materials and Their 2D Counterparts

2D materials, namely thin layers of layered materials, are attracting much attention because of their unique electronic, optical, thermal, and catalytic properties for wide applications. To advance both the fundamental studies and further practical applications, the scalable and controlled synthesis of large-sized 2D materials is desired, while there still lacks ideal approaches. Alternatively, the chemical vapor transport reaction is an old but powerful technique, and is recently adopted for synthesizing 2D materials, producing bulk crystals of layered materials or corresponding 2D films. Herein, recent advancements in synthesizing both bulk layered and 2D materials by chemical vapor transport reactions are summarized. Beginning with a brief introduction of the fundamentals of chemical vapor transport reactions, chemical vapor transport-based syntheses of bulk layered and 2D materials, mainly exampled by transition metal dichalcogenides and black phosphorus, are reviewed. Particular attention is paid to important factors that can influence the reactions and the growth mechanisms of black phosphorus. Finally, perspectives about the chemical vapor transport-based synthesis of 2D materials are discussed, intending to redraw attentions on chemical vapor transport reactions.

Path towards graphene commercialization from lab to market

The ground-breaking demonstration of the electric field effect in graphene reported more than a decade ago prompted the strong push towards the commercialization of graphene as evidenced by a wealth of graphene research, patents and applications. Graphene flake production capability has reached thousands of tonnes per year, while continuous graphene sheets of tens of metres in length have become available. Various graphene technologies developed in laboratories have now transformed into commercial products, with the very first demonstrations in sports goods, automotive coatings, conductive inks and touch screens, to name a few. Although challenges related to quality control in graphene materials remain to be addressed, the advancement in the understandings of graphene will propel the commercial success of graphene as a compelling technology. This Review discusses the progress towards commercialization of graphene for the past decade and future perspectives.

Graphene-Based Spatial Light Modulator Using Metal Hot Spots

Here, we report a graphene-based electric field enhancement structure achieved by several adjacent metal nanoribbons which form the hot spots of the electric field and thus promote the absorption of the single layered graphene below the hot spots. Based on the tunability of the graphene's Fermi level, the absorption rate can be modulated from near 100% to 35% under low electrostatic gating, leading to a 20 dB modulation depth of reflectance. Compared with the existing near infrared spatial light modulators such as optical cavities integrated with graphene and other structures utilizing patterned or highly doped graphene, our design has the advantages of strong optical field enhancement, low power dissipation and high modulation depth. The proposed electro-optic modulator has a promising potential for developing optical communication and exploiting big data interaction systems.

Ultrafast All-Optical Modulation in 2D Hybrid Perovskites

Two-dimensional (2D) hybrid organic-inorganic Ruddlesden-Popper perovskites (RPPs) have been recently shown to exhibit large nonlinear optical properties due to the strong excitonic effects present in their multiple quantum wells. In this work, we use nondegenerate pump-probe spectroscopy in the 600-1000 nm wavelength range to study the influence of nonlinear effects on the ultrafast dynamics of 2D RPP thin flakes. We find that, under sub-bandgap excitation, ∼100 nm thick perovskite sheets allow up to ∼2% reflectivity modulation within a 20 fs period, due to the nonlinear optical Kerr effect and two-photon absorption, surpassing by a factor of ∼5 the reported nonlinear performance of photonic metasurfaces and single nanoantennas. When the excitation is resonant with the excitonic absorption, the ultrafast nature of the nonlinear response is lost due to the presence of linear absorption creating long-lived free carriers. Our results suggest that 2D RPPs are potential nanoscale all-optical modulators in the visible/near-infrared waveband for applications such as ultrafast information processing, optical data transmission, and high-performance computing.

1.34 µm Q-Switched Nd:YVO4 Laser with a Reflective WS2 Saturable Absorber

In this work, a Tungsten disulfide (WS₂) reflective saturable absorber (SA) fabricated using the Langmuir–Blodgett technique was used in a solid state Nd:YVO₄ laser operating at 1.34 µm. A Q-switched laser was constructed. The shortest pulse width was 409 ns with the repetition rate of 159 kHz, and the maximum output power was 338 mW. To the best of our knowledge, it is the first time that short laser pulses have been generated in a solid state laser at 1.34 µm using a reflective WS₂ SA fabricated by the Langmuir–Blodgett method.

Active control of terahertz plasmon-induced transparency in the hybrid metamaterial/monolayer MoS2/Si structure

Active control of terahertz waves is critical to the development of terahertz devices. Two-dimensional materials with excellent optical properties provide more choices for opto-electrical devices due to the advancement in their preparation technology. We proposed a hybrid structure of a metamaterial/monolayer MoS2/Si and investigated its optical properties in the terahertz range. The plasmon-induced transparency (PIT) effect was observed in the transmission spectra, resulting from the near-field coupling of two bright modes. According to the simulated results, this phenomenon confirmed its dependency on the length of the cutwire and the distance between DSSRs. Furthermore, an external optical field supported by a 1064 nm laser could exert a switch effect on the sample. The resonances of the PIT metamaterial disappeared when the optical power was further increased, as the excited carriers in the MoS2/Si substrate blocked the coupling effect. In addition, the experimental results indicated that the PIT metamaterial enhanced the interaction of infrared light with the monolayer MoS2/Si substrate.

Broadband all-light-control with WS2 coated microfibers

All-optical light amplitude tuning functionality is demonstrated in a layered tungsten disulfide (WS₂) nanosheets coated microfiber (MF) structure. Due to the strong light-matter interactions between WS₂ nanosheets and the evanescent field around the MF, a large variation in the transmitted power can be observed under both external and internal pump light excitations over a broadband spectrum (~100 nm). A power variation rate of ~0.3744 dB/mW is obtained under external violet pump light excitation, whereas the power variation rate of similar devices in the state of the art are usually less than 0.3 dB/mW. In terms of the response time, a moderate rise/fall time of ∼20.5/19.6 ms is achieved, which is mainly limited by the employed structure fabrication methods. These results indicate that the optical transmitted power of the WS₂ coated MF can be modulated by different pump light with the power in the order of mW, thus the proposed device might have potential applications in all optical controllable devices and sensors, etc.

A reliable procedure for the preparation of graphene-boron nitride superlattices as large area (cm × cm) films on arbitrary substrates or powders (gram scale) and unexpected electrocatalytic properties

Herein, a reliable procedure for the preparation of graphene-boron nitride superlattices, either as films or powders, consisting of the pyrolysis at 900 °C of polystyrene embedded pre-formed boron nitride single sheets is reported. The procedure can serve to prepare large area films (cm × cm) of this superlattice on quartz, copper foil and ceramics. Selected area electron diffraction patterns at every location on the films show the occurrence of the graphene-boron nitride superlattice all over the film. The procedure can also be applied to the preparation of powdered samples on a gram scale. Comparison with other materials indicates that the superlattice appears spontaneously as the growing graphene sheets develop, due to the templating effect of pre-existing boron nitride single sheets. Since the characteristic boron nitride emission in the visible region is completely quenched in the superlattice configuration, it is proposed that fluorescence microscopy can be used as a routine technique to determine the occurrence of superlattice in large area films. Electrodes of this material show an unforeseen catalytic activity for oxygen reduction reaction and exhibit a decrease of the heterojunction-electrolyte interphase electrical resistance.

2D group-VA fluorinated antimonene: synthesis and saturable absorption

A new derivative of antimonene named fluorinated antimonene was synthesized using the method of ionic liquid-assisted electrochemical exfoliation and synchronous fluorination. Passive Q-switched pulses were produced from a Nd:LuAG laser with fluorinated antimonene, having a pulse width of 326.7 ns and a repetition rate of 733.1 kHz demonstrating its potential application as a saturable absorber. Density functional theory calculations revealed that compared with pure antimonene with an indirect bandgap, fluorinated antimonene exhibits a direct bandgap modulated by the fluorination degree showing that fluorinated antimonene would be applied as optical devices beyond its application as a saturable absorber.

Ternary chalcogenide Ta2NiS5 as a saturable absorber for a 1.9 μm passively Q-switched bulk laser

In this Letter, a high-quality saturable absorber (SA) based on a multilayered two-dimensional ternary chalcogenide Ta₂NiS₅ with a narrow bandgap, has been successfully fabricated and used as a SA in a 1.9 μm spectral region. The nonlinear saturable absorption properties of the as-prepared SA have been investigated by using an open-aperture Z-scan method. A passively Q-switched all-solid-state laser operating at 1.9 μm has been realized with the Ta₂NiS₅ SA. The maximum average output power, shortest pulse width, pulse energy, and pulse peak power from the passively Q-switched (PQS) laser are 1.1 W, 313 ns, 22.0 μJ, and 71.0 W, respectively. This is the first demonstration of the saturable absorption property of Ta₂NiS₅, to the best of our knowledge. The results indicate well the promising potential of Ta₂NiS₅ as a broadband SA in realizing pulsed mid-infrared lasers with high performance.

Many-Body Complexes in 2D Semiconductors

2D semiconductors such as transition metal dichalcogenides (TMDs) and black phosphorus (BP) are currently attracting great attention due to their intrinsic bandgaps and strong excitonic emissions, making them potential candidates for novel optoelectronic applications. Optoelectronic devices fabricated from 2D semiconductors exhibit many-body complexes (exciton, trion, biexciton, etc.) which determine the materials optical and electrical properties. Characterization and manipulation of these complexes have become a reality due to their enhanced binding energies as a direct result from reduced dielectric screening and enhanced Coulomb interactions in the 2D regime. Furthermore, the atomic thickness and extremely large surface-to-volume ratio of 2D semiconductors allow the possibility of modulating their inherent optical, electrical, and optoelectronic properties using a variety of different environmental stimuli. To fully realize the potential functionalities of these many-body complexes in optoelectronics, a comprehensive understanding of their formation mechanism is essential. A topical and concise summary of the recent frontier research progress related to many-body complexes in 2D semiconductors is provided here. Moreover, detailed discussions covering the aspects of fundamental theory, experimental investigations, modulation of properties, and optoelectronic applications are given. Lastly, personal insights into the current challenges and future outlook of many-body complexes in 2D semiconducting materials are presented.

Synergistic additive-mediated CVD growth and chemical modification of 2D materials

This review summarizes significant advances in the use of typical synergistic additives in growth of 2D materials with chemical vapor deposition, and the corresponding performance improvement of field effect transistors and photodetectors.

Tunable/Reconfigurable Metasurfaces: Physics and Applications

Metasurfaces, ultrathin metamaterials constructed by planar meta-atoms with tailored electromagnetic (EM) responses, have attracted tremendous attention due to their exotic abilities to freely control EM waves. With active elements incorporated into metasurface designs, one can realize tunable and/or reconfigurable metadevices with functionalities controlled by external stimuli, opening a new platform to dynamically manipulate EM waves. In this article, we briefly review recent progress on tunable/reconfigurable metasurfaces, focusing on their working mechanisms and practical applications. We first describe available approaches, categorized into different classes based on external stimuli applied, to realize homogeneous tunable/reconfigurable metasurfaces, which can offer uniform manipulations on EM waves. We next summarize recent achievements on inhomogeneous tunable/reconfigurable metasurfaces with constitutional meta-atoms locally tuned by external knobs, which can dynamically control the wave-fronts of EM waves. We conclude this review by presenting our own perspectives on possible future directions and existing challenges in this fast developing field.

Optically controlled tunable ultra-narrow linewidth fiber laser with Rayleigh backscattering and saturable absorption ring

We propose an optically controlled tunable ultra-narrow linewidth fiber laser assisted with the mode selection induced by a saturable absorption interference ring and linewidth narrowing of fiber Rayleigh backscattering (RBS). The interference ring serves as an artificial narrow-band filter, which conduces to the laser operating at a single-frequency state. To realize narrower linewidths, additional single-mode fiber is utilized to accumulate a weak RBS feedback. On basis of inherent wavelength universality of this linewidth-narrowing mechanism, an all-optical technique is employed to enable linear and stable tunability of the laser. Cooperating with a micro-fiber Bragg grating covered by graphene, the lasing wavelength is tuned precisely and reversibly with a sensitivity of 12.4 pm/mW and a linear fitting R2 over 0.997 by changing the power of a controlling beam. During a stability test with the controlling pump power fixed, the long-term free-running power fluctuation is less than 0.5%. The Output laser linewidth is compressed to be ~200 Hz, which is also confirmed by the descending frequency noise spectrum.

Tailoring the nonlinear optical performance of two-dimensional MoS2 nanofilms via defect engineering

Defect engineering plays a key role in determining the catalytic and optical properties of two-dimensional (2D) materials such as molybdenum disulfide (MoS2) in their practical applications in optical and photonic devices. Here, we report a direct strategy for the fabrication of wafer-scale 2D MoS2 nanofilms with tunable sulfur (S) vacancies and crystallinity by a modified solvothermal method via a polyelectrolyte-assisted annealing process. Our results demonstrate that the S vacancies in MoS2 nanofilms can induce saturable absorption (SA) in MoS2 by introducing new energy bands within the band gap of MoS2, and the crystallinity has a significant effect on the two-photon absorption (TPA) coefficient of MoS2 nanofilms. The SA responses in MoS2 will gradually dominate the nonlinear optical (NLO) behavior of MoS2 with a lower saturable intensity along with increasing the S vacancies. The TPA coefficient of the MoS2 nanofilms with increased crystallinity is improved to (4.3 ± 0.5) × 102 cm GW-1 on increasing the crystallinity of MoS2 films, over four times larger than that of their counterpart with relatively low crystallinity. Additionally, the damage threshold of MoS2 nanofilms after polyelectrolyte-assisted annealing treatment is greatly improved to ∼74.1 GW cm-2 compared to ∼32.6 GW cm-2 of their counterpart with few S vacancies and relatively low crystallinity, due to the increased crystallinity and partial oxidation of MoS2. This work sheds light on how the defects tailor the nonlinear optical properties of 2D MoS2 nanofilms and affords an effective strategy for defect engineering via a polyelectrolyte-assisted annealing process, which can be applied to other 2D transition metal dichalcogenides.

Sub-200 fs soliton mode-locked fiber laser based on bismuthene saturable absorber

Few-layer bismuthene is an emerging two-dimensional material in the fields of physics, chemistry, and material science. However, its nonlinear optical property and the related photonics device have been seldom studied so far. Here, we demonstrate a sub-200 fs soliton mode-locked erbium-doped fiber laser (EDFL) using a microfiber-based bismuthene saturable absorber for the first time, to the best of our knowledge. The bismuthene nanosheets are synthesized by the sonochemical exfoliation method and transferred onto the taper region of a microfiber by the optical deposition method. Stable soliton pulses centered at 1561 nm with the shortest pulse duration of about 193 fs were obtained. Our findings unambiguously imply that apart from its fantastic electric and thermal properties, few-layer bismuthene may also possess attractive optoelectronic properties for nonlinear photonics, such as mode-lockers, Q-switchers, optical modulators and so on.

Effects of external magnetic field and out-of-plane strain on magneto-optical Kerr spectra in CrI3 monolayer

Magnetic semiconductors based on two-dimensional (2D) crystals have attracted attention owing to their intrinsic ferromagnetism and have potential for spintronic devices. Here, full-potential linearized augmented plane wave plus local orbitals method is used to explore the structural, electronic, magnetic, and magneto-optical properties of CrI₃ monolayer. Our first-principles calculations show that CrI₃ monolayer is a ferromagnetic indirect semiconductor with spin-up and spin-down band gaps of 1.23 and 1.90 eV, respectively, and a magnetic moment of 2.93 [Formula: see text] per Cr atom. Based on the macroscopic linear response theory, we systematically study the influences of external magnetic field and out-of-plane strain on the magneto-optical Kerr effect spectra in CrI₃ monolayer. The Kerr rotation of CrI₃ monolayer at 1.96 eV photon energy is [Formula: see text], which is consistent with the recent experiments. We find that the Kerr rotation reaches its maximum when the external magnetic field is perpendicular to CrI₃ plane, while it is almost zero on turning the magnetic field in the plane. This result as well as the sizable magnetocrystalline anisotropy energy (MAE) of 0.79 meV verifies that CrI₃ monolayer has a strong magnetic anisotropy with an out-of-plane easy axis. Further, applying out-of-plane compressive and tensile strain upon CrI₃ monolayer, we observe a redshift of the Kerr rotation spectra with the increase of the strain and the peak values of the Kerr rotation increase correspondingly. The rich electronic and magnetic properties, especially the magneto-optical spectra, render CrI₃ monolayer a promising 2D magnetic material for applications from sensing to data storage.

Recent Advances in the Solution-Based Preparation of Two-Dimensional Layered Transition Metal Chalcogenide Nanostructures

The precise control in size/thickness, composition, crystal phases, doping, defects, and surface properties of two-dimensional (2D) layered transition metal chalcogenide (TMC) is important for the investigation of interwoven relationship between structures, functions, and practical applications. Of the multiple synthetic routes, solution-based top-down and bottom-up chemical methods have been uniquely important for their potential to control the size and composition at the molecular level in addition to their scalability, competitive production cost, and solution processability. Here, we introduce an overview of the recent advances in the solution-based preparation routes of 2D layered TMC nanostructures along with important scientific developments.

Nonlinear Optics with 2D Layered Materials

2D layered materials (2DLMs) are a subject of intense research for a wide variety of applications (e.g., electronics, photonics, and optoelectronics) due to their unique physical properties. Most recently, increasing research efforts on 2DLMs are projected toward the nonlinear optical properties of 2DLMs, which are not only fascinating from the fundamental science point of view but also intriguing for various potential applications. Here, the current state of the art in the field of nonlinear optics based on 2DLMs and their hybrid structures (e.g., mixed-dimensional heterostructures, plasmonic structures, and silicon/fiber integrated structures) is reviewed. Several potential perspectives and possible future research directions of these promising nanomaterials for nonlinear optics are also presented.

Bending Rigidity of 2D Silica

A chemically stable bilayers of SiO_{2} (2D silica) is a new, wide band gap 2D material. Up till now graphene has been the only 2D material where the bending rigidity has been measured. Here we present inelastic helium atom scattering data from 2D silica on Ru(0001) and extract the first bending rigidity, κ, measurements for a nonmonoatomic 2D material of definable thickness. We find a value of κ=8.8  eV±0.5  eV which is of the same order of magnitude as theoretical values in the literature for freestanding crystalline 2D silica.

Terahertz wave modulation enhanced by laser processed PVA film on Si substrate

An optically pumped ultrasensitive broadband terahertz (THz) wave modulator based on polyvinyl alcohol (PVA) film on Si wafer was demonstrated in this work. The THz time domain spectroscopy experiments confirm that the PVA/Si can drastically enhance the photo-induced THz wave modulation on the Si surface, especially when the PVA film is heated by a high-power laser. A modulation depth of 72% can be achieved only under 0.55 W/cm² modulated laser power, which is superior significantly to the bare Si. The numerical simulations indicate that the laser processed PVA (LP-PVA) film increases the photo-generated carrier concentration on the Si surface in two orders of magnitude higher than that of bare Si. Moreover, the modulation mechanism and the dynamic process of laser heating on the PVA/Si have been discussed. This highly efficient THz modulation mechanism and its simple fabrication method have great application potentials in THz modulators.

Catalyst-free one step synthesis of large area vertically stacked N-doped graphene-boron nitride heterostructures from biomass source

A procedure for the one-step preparation of films of few-layer N-doped graphene on top of nanometric hexagonal boron nitride sheets ((N)graphene/h-BN) based on the pyrolysis at 900 °C under an inert atmosphere of a film of chitosan containing about 20 wt% of ammonium borate salt as a precursor is reported. During the pyrolysis a spontaneous segregation of (N)graphene and boron nitride layers takes place. The films were characterized by optical microscopy that shows a thin graphene overlayer covering the boron nitride layer, the latter showing characteristic cracks, and by XPS measurements at different monitoring angles from 0° to 50° where an increase in the proportion of C vs. B and N was observed. The resulting (N)graphene/h-BN films were also characterized by Raman, HRTEM, SEM, FIB-SEM and AFM. The thickness of the (N)graphene and h-BN layers can be controlled by varying the concentration of precursors and the spin coating rate and is typically below 5 nm. Electrical conductivity measurements using microelectrodes can cause the burning of the graphene layer at high intensities, while lower intensities show that (N)graphene/h-BN films behave as capacitors in the range of positive voltages.

Phase-matching-free parametric oscillators based on two-dimensional semiconductors

Optical parametric oscillators are widely used as pulsed and continuous-wave tunable sources for innumerable applications, such as quantum technologies, imaging, and biophysics. A key drawback is material dispersion, which imposes a phase-matching condition that generally entails a complex design and setup, thus hindering tunability and miniaturization. Here we show that the burden of phase-matching is surprisingly absent in parametric micro-resonators utilizing mono-layer transition-metal dichalcogenides as quadratic nonlinear materials. By the exact solution of nonlinear Maxwell equations and first-principle calculations of the semiconductor nonlinear response, we devise a novel kind of phase-matching-free miniaturized parametric oscillator operating at conventional pump intensities. We find that different two-dimensional semiconductors yield degenerate and non-degenerate emission at various spectral regions due to doubly resonant mode excitation, which can be tuned by varying the incidence angle of the external pump laser. In addition, we show that high-frequency electrical modulation can be achieved by doping via electrical gating, which can be used to efficiently shift the threshold for parametric oscillation. Our results pave the way for the realization of novel ultra-fast tunable micron-sized sources of entangled photons-a key device underpinning any quantum protocol. Highly miniaturized optical parametric oscillators may also be employed in lab-on-chip technologies for biophysics, detection of environmental pollution and security.

Photodetectors Based on Organic-Inorganic Hybrid Lead Halide Perovskites

Recent years have witnessed skyrocketing research achievements in organic-inorganic hybrid lead halide perovskites (OIHPs) in the photovoltaic field. In addition to photovoltaics, more and more studies have focused on OIHPs-based photodetectors in the past two years, due to the remarkable optoelectronic properties of OIHPs. This article summarizes the latest progress in this research field. To begin with, the factors influencing the performance of photodetectors are discussed, including both internal and external factors. In particular, the channel width and the incident power intensities should be taken into account to precisely and objectively evaluate and compare the output performance of different photodetectors. Next, photodetectors fabricated on single-component perovskites in terms of different micromorphologies are discussed, namely, 3D thin-film and single crystalline, 2D nanoplates, 1D nanowires, and 0D nanocrystals, respectively. Then, bilayer structured perovskite-based photodetectors incorporating inorganic and organic semiconductors are discussed to improve the optoelectronic performance of their pristine counterparts. Additionally, flexible OIHPs-based photodetectors are highlighted. Finally, a brief conclusion and outlook is given on the progress and challenges in the field of perovskites-based photodetectors.

Controllable manipulation of bubbles in water by using underwater superaerophobic graphene-oxide/gold-nanoparticle composite surfaces

Manipulation of bubbles in water is of great importance in the mineral industry, oil production and separation, wastewater treatments, boiling processes, biological cell incubations, microfluidics and miniature reactor technologies. Generally, bubbles in an aqueous environment are inclined to stick to the channel walls, resulting in blockage and energy-consuming treatments. Herein, we report the fabrication of low-adhesion graphene-oxide (GO)/gold-nanoparticle (GNP) hybrid films with a good underwater superaerophobicity, which have the ability to arbitrarily manipulate bubbles in water. Owing to the hydrophilic nature of GO nanosheets and hierarchical structures of aggregated GNPs, the GO/GNP hybrid films showed low adhesion towards bubbles in water. Thus, bubbles could be freely manipulated using home-made tools coated with these low-adhesion, underwater superaerophobic GO/GNP hybrid films. The controlled 1D and 2D movements of one bubble and merging/reaction of two bubbles can be achieved. This study provides a new avenue to design new strategies for bubble manipulations, and further extends the application of superwettable 2D materials in interface fields involving gas phases.

Self-Powered Nanoscale Photodetectors

Novel self-powered nanoscale photodetectors that can work without an external power source, which have great application potential in next-generation nanodevices that operate wirelessly and independently, are being widely studied. This review aims to give a comprehensive summary of the state-of-the-art research results on self-powered nanoscale photodetectors. An introduction of recent progress on Schottky junction photodetectors is provided. Two types of Schottky junctions are discussed in detail: metal-semiconductor and semiconductor-graphene junctions. Next, recent developments of p-n junction photodetectors are highlighted, including homojunction and heterojunction photodetectors. Then, piezo-phototronic effect enhanced photodetection performances of Schottky junctions and p-n junctions are discussed. Then, significant results on the photoelectrochemical-cell-based photodetector and integrated self-powered nanosystem are presented, followed by a systematic comparison of different types of photodetectors. Finally, a summary of the previous results is given, and the major challenges that need to be addressed in the future are outlined. The hope is that this review can provide valuable insights into the current status of self-powered photodetectors and spur new structure and device designs to further enhance photodetection performance.