New development of atomic layer deposition: processes, methods and applications

Titanium Dioxide Thin Films Obtained by Atomic Layer Deposition Promotes Osteoblasts' Viability and Differentiation Potential While Inhibiting Osteoclast Activity-Potential Application for Osteoporotic Bone Regeneration

Atomic layer deposition (ALD) technology has started to attract attention as an efficient method for obtaining bioactive, ultrathin oxide coatings. In this study, using ALD, we have created titanium dioxide (TiO2) layers. The coatings were characterised in terms of physicochemical and biological properties. The chemical composition of coatings, as well as thickness, roughness, wettability, was determined using XPS, XRD, XRR. Cytocompatibillity of ALD TiO2 coatings was accessed applying model of mouse pre-osteoblast cell line MC3T3-E1. The accumulation of transcripts essential for bone metabolism (both mRNA and miRNA) was determined using RT-qPCR. Obtained ALD TiO2 coatings were characterised as amorphous and homogeneous. Cytocompatibility of the layers was expressed by proper morphology and growth pattern of the osteoblasts, as well as their increased viability, proliferative and metabolic activity. Simultaneously, we observed decreased activity of osteoclasts. Obtained coatings promoted expression of Opn, Coll-1, miR-17 and miR-21 in MC3T3-E1 cells. The results are promising in terms of the potential application of TiO2 coatings obtained by ALD in the field of orthopaedics, especially in terms of metabolic- and age-related bone diseases, including osteoporosis.

Dual-guiding-layer resonance structure with an embedded metasurface for quasi-critical coupling without a perfect mirror

We propose an all-dielectric quasi-one-port resonance structure that achieves near perfect absorption without the use of a back mirror. The structure mainly consists of a high-refractive-index silicon metasurface and surrounding high-refractive-index guiding layers. The dual-guiding-layer (DGL) structure has high background reflectance and is designed to have a ratio of two decay rates into the upper and lower regions within a wider range. When an absorbing material is introduced into a DGL system, it can be designed to achieve a near critical-coupling condition by reducing the constraints in the two decay rates. By using single-layer graphene as an absorbing material, the DGL resonance structure shows an absorption of ~ 97% and a phase change of ∼ 0.95π near the wavelength of 1550 nm, confirming quasi-critical coupling. The optimized DGL structure is relatively insensitive to potential fabrication imperfections, and consequently, the expected average peak wavelength and absorption are obtained as 1549.29 nm and 96.74%, respectively. Angle-dependent absorption confirms that maximum absorption occurs under normal incidence. The DGL absorber is also designed to cover the whole C-band region, in order to meet the quasi-critical-coupling condition. All mode profiles are similarly quasi-symmetric along the metasurface due to the same DGL resonance mechanism.

Hafnium (IV) oxide obtained by atomic layer deposition (ALD) technology promotes early osteogenesis via activation of Runx2-OPN-mir21A axis while inhibits osteoclasts activity

BACKGROUND

Due to increasing aging of population prevalence of age-related disorders including osteoporosis is rapidly growing. Due to health and economic impact of the disease, there is an urgent need to develop techniques supporting bone metabolism and bone regeneration after fracture. Due to imbalance between bone forming and bone resorbing cells, the healing process of osteoporotic bone is problematic and prolonged. Thus searching for agents able to restore the homeostasis between these cells is strongly desirable.

RESULTS

In the present study, using ALD technology, we obtained homogeneous, amorphous layer of hafnium (IV) oxide (HfO2). Considering the specific growth rate (1.9Å/cycle) for the selected process at the temperature of 90 °C, we performed the 100 nm deposition process, which was confirmed by measuring film thickness using reflectometry. Then biological properties of the layer were investigated with pre-osteoblast (MC3T3), pre-osteoclasts (4B12) and macrophages (RAW 264.7) using immunofluorescence and RT-qPCR. We have shown, that HfO2 (i) enhance osteogenesis, (ii) reduce osteoclastogenesis (iii) do not elicit immune response and (iv) exert anti-inflammatory effects.

CONCLUSION

HfO2 layer can be applied to cover the surface of metallic biomaterials in order to enhance the healing process of osteoporotic bone fracture.

Ultrathin Free-Standing Oxide Membranes for Electron and Photon Spectroscopy Studies of Solid-Gas and Solid-Liquid Interfaces

Free-standing ultrathin (∼2 nm) films of several oxides (Al₂O₃,TiO₂, and others) have been developed, which are mechanically robust and transparent to electrons with E_kin ≥ 200 eV and to photons. We demonstrate their applicability in environmental X-ray photoelectron and infrared spectroscopy for molecular level studies of solid-gas (≥1 bar) and solid-liquid interfaces. These films act as membranes closing a reaction cell and as substrates and electrodes for electrochemical reactions. The remarkable properties of such ultrathin oxides membranes enable atomic/molecular level studies of interfacial phenomena, such as corrosion, catalysis, electrochemical reactions, energy storage, geochemistry, and biology, in a broad range of environmental conditions.

Pharmaceutical Application of Tablet Film Coating

Tablet film coating is a common but critical process providing various functionalities to tablets, thereby meeting diverse clinical needs and increasing the value of oral solid dosage forms. Tablet film coating is a technology-driven process and the evolution of coated dosage forms relies on advancements in coating technology, equipment, analytical techniques, and coating materials. Although multiple coating techniques are developed for solvent-based or solvent-free coating processes, each method has advantages and disadvantages that may require continuous technical refinement. In the film coating process, intra- and inter-batch coating uniformity of tablets is critical to ensure the quality of the final product, especially for active film coating containing active pharmaceutical ingredients in the coating layer. In addition to experimental evaluation, computational modeling is also actively pursued to predict the influence of operation parameters on the quality of the final product and optimize process variables of tablet film coating. The concerted efforts of experiments and computational modeling can save time and cost in optimizing the tablet coating process. This review provides a brief overview of tablet film coating technology and modeling approaches with a focus on recent advancements in pharmaceutical applications.

Phase identification of vanadium oxide thin films prepared by atomic layer deposition using X-ray absorption spectroscopy

The chemical and local structures of vanadium oxide (VO_x) thin films prepared by atomic layer deposition (ALD) were investigated by soft X-ray absorption spectroscopy. It is shown that the as-deposited film was a mixture of VO₂ and V₂O₅ in disordered form, while the chemistry changed significantly after heat treatment, subject to the different gas environment. Forming gas (95% N₂ + 5% H₂) annealing resulted in a VO₂ composition, consisting mostly of the VO₂ (B) phase with small amount of the VO₂ (M) phase, whereas O₂ annealing resulted in the V₂O₅ phase. An X-ray circular magnetic dichroism study further revealed the absence of ferromagnetic ordering, confirming the absence of oxygen vacancies despite the reduction of V ions in VO₂ (V⁴⁺) with respect to the precursor used in the ALD (V⁵⁺). This implies that the prevalence of VO₂ in the ALD films cannot be attributed to a simple oxygen-deficiency-related reduction scheme but should be explained by the metastability of the local VO₂ structures.

X-ray absorption spectroscopy reveals the local structures of atomic-layer-deposited vanadium oxide films subject to heat treatments.

Ultrathin permselective membranes: the latent way for efficient gas separation

Membrane gas separation has attracted the attention of chemical engineers for the selective separation of gases. Among the different types of membranes used, ultrathin membranes are recognized to break the trade-off between selectivity and permeance to provide ultimate separation. Such success has been associated with the ultrathin nature of the selective layer as well as their defect-free structure. These membrane features can be obtained from specific membrane preparation procedures used, in which the intrinsic properties of different nanostructured materials (e.g., polymers, zeolites, covalent-organic frameworks, metal-organic frameworks, and graphene and its derivatives) also play a crucial role. It is likely that such a concept of membranes will be explored in the coming years. Therefore, the goal of this review study is to give the latest insights into the use of ultrathin selective barriers, highlighting and describing the primary membrane preparation protocols applied, such as atomic layer deposition, in situ crystal formation, interfacial polymerization, Langmuir-Blodgett technique, facile filtration process, and gutter layer formation, to mention just a few. For this, the most recent approaches are addressed, with particular emphasis on the most relevant results in separating gas molecules. A brief overview of the fundamentals for the application of the techniques is given. Finally, by reviewing the ongoing development works, the concluding remarks and future trends are also provided.

Antimicrobial Bilayer Nanocomposites Based on the Incorporation of As-Synthetized Hollow Zinc Oxide Nanotubes

An antimicrobial polymeric bilayer structure based on the application of an acrylic coating containing hollow zinc oxide nanotubes over a polymeric substrate was developed in this work. Firstly, zinc oxide nanotubes (ZnO_NT) were obtained by an atomic layer deposition (ALD) process over electrospun polyvinyl alcohol nanofibers followed by polymer removal through calcination with the purpose of obtaining antimicrobial nanostructures with a high specific area. Parameters of electrospinning, ALD, and calcination processes were set in order to obtain successfully hollow zinc oxide nanotubes. Morphological studies through scanning electron microscopy (SEM) and transmission electron microscopy (TEM) microscopies confirmed the morphological structure of ZnO_NT with an average diameter of 180 nm and thickness of approximately 60 nm. Thermal and X-ray diffraction (XRD) analyses provided evidence that calcination completely removed the polymer, resulting in a crystalline hexagonal wurtzite structure. Subsequently, ZnO_NT were incorporated into a polymeric coating over a polyethylene extruded film at two concentrations: 0.5 and 1 wt. % with respect to the polymer weight. An antimicrobial analysis of developed antimicrobial materials was performed following JIS Z2801 against Staphylococcus aureus and Escherichia coli. When compared to active materials containing commercial ZnO nanoparticles, materials containing ZnO_NT presented higher microbial inhibition principally against Gram-negative bacteria, whose reduction was total for films containing 1 wt. % ZnO_NT. Antiviral studies were also performed, but these materials did not present significant viral reduction.

ALD Al2O3 gate dielectric on the reduction of interface trap density and the enhanced photo-electric performance of IGO TFT

The amorphous indium gallium oxide thin film transistor was fabricated using a cosputtering method. Two samples with different gate dielectric layers were used as follows: sample A with a SiO₂ dielectric layer; and sample B with an Al₂O₃ dielectric layer. The influence of the gate dielectrics on the electric and photo performance has been investigated. Atomic layer deposition deposited the dense film with low interface trapping density and effectively increased drain current. Therefore, sample B exhibited optimal parameters, with an I_on/I_off ratio of 7.39 × 10⁷, the subthreshold swing of 0.096 V dec⁻¹, and μ_FE of 5.36 cm² V⁻¹ s⁻¹. For ultraviolet (UV) detection, the UV-to-visible rejection ratio of the device was 3 × 10⁵, and the photoresponsivity was 0.38 A W⁻¹ at the V_GS of −5 V.

The amorphous indium gallium oxide thin film transistor was fabricated using a cosputtering method.

Multifunctional Magnetic Nanowires: Design, Fabrication, and Future Prospects as Cancer Therapeutics

Traditional cancer therapeutics are limited by factors such as multi-drug resistance and a plethora of adverse effect. These limitations need to be overcome for the progression of cancer treatment. In order to overcome these limitations, multifunctional nanosystems have recently been introduced into the market. The employment of multifunctional nanosystems provide for the enhancement of treatment efficacy and therapeutic effect as well as a decrease in drug toxicity. However, in addition to these effects, magnetic nanowires bring specific advantages over traditional nanoparticles in multifunctional systems in terms of the formulation and application into a therapeutic system. The most significant of which is its larger surface area, larger net magnetic moment compared to nanoparticles, and interaction under a magnetic field. This results in magnetic nanowires producing a greater drug delivery and therapeutic platform with specific regard to magnetic drug targeting, magnetic hyperthermia, and magnetic actuation. This, in turn, increases the potential of magnetic nanowires for decreasing adverse effects and improving patient therapeutic outcomes. This review focuses on the design, fabrication, and future potential of multifunctional magnetic nanowire systems with the emphasis on improving patient chemotherapeutic outcomes.

Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition

This study presents the characteristics of HfAlO films for a series of Al incorporation ratios into a HfO₂ dielectric by atomic layer deposition on a Si substrate. A small amount of Al doping into the HfO₂ film can stabilize the tetragonal phase of the HfO₂, which helps to achieve a higher dielectric constant (k) and lower leakage current density, as well as a higher breakdown voltage than HfO₂ film on its own. Moreover, assimilation of Al₂O₃ into HfO₂ can reduce the hysteresis width and frequency dispersion. These are indications of border trap reduction, which was also verified by the border trap extraction mechanism. X-ray photoelectron spectroscopy (XPS) analysis also verified the HfAlO microstructural properties for various Al compositions. In addition, higher amounts of Al₂O₃ in HfAlO resulted in better interface and dielectric behavior through trap minimization, although the equivalent-oxide-thickness (EOT) values show the opposite trend.