Unlocking the Potential of Porous Bi2Te3-Based Thermoelectrics Using Precise Interface Engineering through Atomic Layer Deposition

Porous thermoelectric materials offer exciting prospects for improving the thermoelectric performance by significantly reducing the thermal conductivity. Nevertheless, porous structures are affected by issues, including restricted enhancements in performance attributed to decreased electronic conductivity and degraded mechanical strength. This study introduces an innovative strategy for overcoming these challenges using porous Bi0.4Sb1.6Te3 (BST) by combining porous structuring and interface engineering via atomic layer deposition (ALD). Porous BST powder was produced by selectively dissolving KCl in a milled mixture of BST and KCl; the interfaces were engineered by coating ZnO films through ALD. This novel architecture remarkably reduced the thermal conductivity owing to the presence of several nanopores and ZnO/BST heterointerfaces, promoting efficient phonon scattering. Additionally, the ZnO coating mitigated the high resistivity associated with the porous structure, resulting in an improved power factor. Consequently, the ZnO-coated porous BST demonstrated a remarkable enhancement in thermoelectric efficiency, with a maximum zT of approximately 1.53 in the temperature range of 333-353 K, and a zT of 1.44 at 298 K. Furthermore, this approach plays a significant role in enhancing the mechanical strength, effectively mitigating a critical limitation of porous structures. These findings open new avenues for the development of advanced porous thermoelectric materials and highlight their potential for precise interface engineering through the ALD.

Photonic Properties of Thin Films Composed of Gallium Nitride Quantum Dots Synthesized by Nonequilibrium Plasma Aerotaxy

Gallium nitride quantum dots (GaN QDs) are a promising material for optoelectronics, but the synthesis of freestanding GaN QDs remains a challenge. To date, the size-dependent photonic properties of freestanding GaN QDs have not been reported. Here, we examine the photonic properties exhibited by thin films composed of GaN QDs synthesized by nonequilibrium plasma aerotaxy. Each film exhibited two photoluminescence peaks after exposure to ambient air. The first peak was in the ultraviolet spectral region, and the second peak was in the visible region. Both peak positions depended on the QD size. Our findings, supported by transient absorption spectroscopy experiments, suggest that conduction band to valence band recombination was the cause of the ultraviolet photoluminescence and that recombination between the conduction band and an acceptor level was the cause of visible photoluminescence. Furthermore, we show that coating the surface of fresh QDs with Al2O3 suppressed the visible region photoluminescence, corroborating the conclusion that the photoactive defect was caused by oxidation in air.

Constructing an Al3+/Zn2+-Based Solid Electrolyte Interphase to Enable Extraordinarily Stable Al3+-Based Electrochromic Devices

The interface between the electrochromic (EC) electrode and ionic conductor is crucial for high-performance and extraordinarily stable EC devices (ECDs). Herein, the effect of the ALD-AZO interfacial layer on the performance of the WO3 thin film was examined, revealing that an introduction of the ALD-AZO interfacial layer to the Al3+-based complementary ECDs can lead to improved EC performance and stability, such as an extraordinary cyclability of more than 20,000 cycles, an outstanding coloration efficiency of 109.69 cm2 C-1, and a maximum transmittance modulation of 63.44%@633 nm. The probable explanation is that the introduced ALD-AZO interfacial layer can effectively regulate the band gap of WO3, promote the electron transport process, and induce the formation of a robust solid electrolyte interphase to protect the electrode during cycling. These findings offer valuable insights for enhancing the EC performance of the EC thin films and new space for the construction of advanced multivalent Al3+-based ECDs.

Precise Design of TiO2@CoOx Heterostructure via Atomic Layer Deposition for Synergistic Sono-Chemodynamic Oncotherapy

Sonodynamic therapy (SDT), a tumor treatment modality with high tissue penetration and low side effects, is able to selectively kill tumor cells by producing cytotoxic reactive oxygen species (ROS) with ultrasound-triggered sonosensitizers. N-type inorganic semiconductor TiO2 has low ROS quantum yields under ultrasound irradiation and inadequate anti-tumor activity. Herein, by using atomic layer deposition (ALD) to create a heterojunction between porous TiO2 and CoOx, the sonodynamic therapy efficiency of TiO2 can be improved. Compared to conventional techniques, the high controllability of ALD allows for the delicate loading of CoOx nanoparticles into TiO2 pores, resulting in the precise tuning of the interfaces and energy band structures and ultimately optimal SDT properties. In addition, CoOx exhibits a cascade of H2O2→O2→·O2 - in response to the tumor microenvironment, which not only mitigates hypoxia during the SDT process, but also contributes to the effect of chemodynamic therapy (CDT). Correspondingly, the synergistic CDT/SDT treatment is successful in inhibiting tumor growth. Thus, ALD provides new avenues for catalytic tumor therapy and other pharmaceutical applications.

Constructing tin oxides Interfacial Layer with Gradient Compositions for Efficient Perovskite/Silicon Tandem Solar Cells with Efficiency Exceeding 28

Atomic layer deposition (ALD) growth of conformal thin SnOx films on perovskite absorbers offers a promising method to improve carrier-selective contacts, enable sputter processing, and prevent humidity ingress toward high-performance tandem perovskite solar cells. However, the interaction between perovskite materials and reactive ALD precursor limits the process parameters of ALD-SnOx film and requires an additional fullerene layer. Here, it demonstrates that reducing the water dose to deposit SnOx can reduce the degradation effect upon the perovskite underlayer while increasing the water dose to promote the oxidization can improve the electrical properties. Accordingly, a SnOx buffer layer with a gradient composition structure is designed, in which the compositionally varying are achieved by gradually increasing the oxygen source during the vapor deposition from the bottom to the top layer. In addition, the gradient SnOx structure with favorable energy funnels significantly enhances carrier extraction, further minimizing its dependence on the fullerene layer. Its broad applicability for different perovskite compositions and various textured morphology is demonstrated. Notably, the design boosts the efficiencies of perovskite/silicon tandem cells (1.0 cm2) on industrially textured Czochralski (CZ) silicon to a certified efficiency of 28.0%.

Recent Achievements for Flexible Encapsulation Films Based on Atomic/Molecular Layer Deposition

The purpose of this paper is to review the research progress in the realization of the organic-inorganic hybrid thin-film packaging of flexible organic electroluminescent devices using the PEALD (plasma-enhanced atomic layer deposition) and MLD (molecular layer deposition) techniques. Firstly, the importance and application prospect of organic electroluminescent devices in the field of flexible electronics are introduced. Subsequently, the principles, characteristics and applications of PEALD and MLD technologies in device packaging are described in detail. Then, the methods and process optimization strategies for the preparation of organic-inorganic hybrid thin-film encapsulation layers using PEALD and MLD technologies are reviewed. Further, the research results on the encapsulation effect, stability and reliability of organic-inorganic hybrid thin-film encapsulation layers in flexible organic electroluminescent devices are discussed. Finally, the current research progress is summarized, and the future research directions and development trends are prospected.

Conformal High-Aspect-Ratio Solid Electrolyte Thin Films for Li-Ion Batteries by Atomic Layer Deposition

Lithium phosphorus oxynitride (LiPON) is a state-of-the-art solid electrolyte material for thin-film microbatteries. These applications require conformal thin films on challenging 3D surface structures, and among the advanced thin-film deposition techniques, atomic layer deposition (ALD) is believed to stand out in terms of producing appreciably conformal thin films. Here we quantify the conformality (i.e., the evenness of deposition) of thin ALD-grown LiPON films using lateral high-aspect-ratio test structures. Two different lithium precursors, lithium tert-butoxide (LiOtBu) and lithium bis(trimethylsilyl)amide (Li-HMDS), were investigated in combination with diethyl phosphoramidate as the source of oxygen, phosphorus, and nitrogen. The results indicate that the film growth proceeded significantly deeper into the 3D cavities for the films grown from LiOtBu, while the Li-HMDS-based films grew more evenly initially, right after the cavity entrances. These observations can be explained by differences in the precursor diffusion and reactivity. The results open possibilities for the use of LiPON as a solid electrolyte in batteries with high-surface-area electrodes. This could enable faster charging and discharging as well as the use of thin-film technology in fabricating thin-film electrodes of meaningful charge capacity.

Microwave-Absorbing Foams with Adjustable Absorption Frequency and Structural Coloration

Microwave-absorbing materials with regulatable absorption frequency and optical camouflage hold great significance in intelligent electronic devices and advanced stealth technology. Herein, we present an innovative microwave-absorbing foam that can dynamically tune microwave absorption frequencies via a simple mechanical compression while in parallel enabling optical camouflage over broad spectral ranges by adjusting the structural colors. The vivid colors spanning different color categories generated from thin-film interference can be precisely regulated by adjusting the thickness of the conformal TiO2 coatings on Ni/melamine foam. Enhanced interfacial and defect-induced polarizations resulting from the introduction of TiO2 coating synergistically contribute to the dielectric attenuation performance. Consequently, such a foam exhibits exceptional microwave absorption capabilities, and the absorption frequency can be dynamically tuned from the S band to the Ku band by manipulating its compression ratio. Additionally, simulation calculations validate the adjustable electromagnetic wave loss behavior, offering valuable insights for the development of next-generation intelligent electromagnetic devices across diverse fields.

Monolithic Two-Terminal Tandem Solar Cells Using Sb2S3 and Solution-Processed PbS Quantum Dots Achieving an Open-Circuit Potential beyond 1.1 V

Multijunction solar cells have the prospect of a greater theoretical efficiency limit than single-junction solar cells by minimizing the transmissive and thermalization losses a single absorber material has. In solar cell applications, Sb2S3 is considered an attractive absorber due to its elemental abundance, stability, and high absorption coefficient in the visible range of the solar spectrum, yet with a band gap of 1.7 eV, it is transmissive for near-IR and IR photons. Using it as the top cell (the cell where light is first incident) in a two-terminal tandem architecture in combination with a bottom cell (the cell where light arrives second) of PbS quantum dots (QDs), which have an adjustable band gap suitable for absorbing longer wavelengths, is a promising approach to harvest the solar spectrum more effectively. In this work, these two subcells are monolithically fabricated and connected in series by a poly(3,4-ethylene-dioxythiophene) polystyrene sulfonate (PEDOT:PSS)-ZnO tunnel junction as the recombination layer. We explore the surface morphology of ZnO QD films with different spin-coating conditions, which serve as the PbS QD cell's electron transport material. Furthermore, we examine the differences in photogenerated current upon varying the PbS QD absorber layer thickness and the electrical and optical characteristics of the tandem with respect to the stand-alone reference cells. This tandem architecture demonstrates an extended spectral response into the IR with an open-circuit potential exceeding 1.1 V and a power conversion efficiency of 5.6%, which is greater than that of each single-junction cell.

Surface Composites Synthesized through the Incorporation of Atomic Layer Deposited AlOx into Nanoporous Fuzzy Tungsten

The incorporation of energetic helium gaseous species into materials such as tungsten (W) imparts intrinsic surface fragility, yielding fuzzy tungsten. To enhance the robustness of the surface layers, aluminum oxide (AlOx) was deposited by atomic layer deposition into the fuzzy W. The conformally deposited ceramic yields a new class of surface composites. Structural characterization of the fuzzy W-AlOx composites through nanoindentation testing indicated enhanced indentation modulus (Eind) and hardness (Hind) and was modeled through various rules of mixtures approaches. The distribution of AlOx in fuzzy W was explored and a systematic study of the extent of incorporation of the AlOx into the fuzzy W was carried out. The synthesized composites may be utilized for improved structural characteristics, e.g., in reducing crack initiation and fracture.

Fabrication of NiCo Bimetallic MOF Films on 3D Foam with Assistance of Atomic Layer Deposition for Non-Invasive Lactic Acid Sensing

Lactic acid (LA) is an important downstream product of glycolysis in living cells and is abundant in our body fluids, which are strongly associated with diseases. The development of enzyme-free LA sensors with high sensitivity and low consumption remains a challenge. 2D metal-organic frameworks (MOFs) are considered to be promising electrochemical sensing materials and have attracted much attention in recent years. Compared to monometallic MOFs, the construction of bimetallic MOFs (BMOFs) can obtain a larger specific surface area, thereby increasing the exposed active site. 3D petal-like NixCoy MOF films on nickel foams (NixCoy BMOF@Ni foams) are successfully prepared by combining atomic layer deposition-assisted technology and hydrothermal strategy. The established NixCoy BMOF@Ni foams demonstrate noticeable LA sensing activity, and the study is carried out on behalf of the Ni1Co5 BMOF@Ni foam, which has a sensitivity of up to 9030 μA mM-1 cm-2 with a linear range of 0.01-2.2 mM and the detection limit is as low as 0.16 μM. Additionally, the composite has excellent stability and repeatability for the detection of LA under a natural air environment with high accuracy and reliability. Density functional theory calculation is applied to study the reaction process between composites and LA, and the result suggests that the active site in the NiCo BMOF film favors the adsorption of LA relative to the active site of monometallic MOF film, resulting in improved performance. The developed composite has a great potential for the application of noninvasive LA biosensors.

Vertically Stackable Ovonic Threshold Switch Oscillator Using Atomic Layer Deposited Ge0.6Se0.4 Film for High-Density Artificial Neural Networks

Nanodevice oscillators (nano-oscillators) have received considerable attention to implement in neuromorphic computing as hardware because they can significantly improve the device integration density and energy efficiency compared to complementary metal oxide semiconductor circuit-based oscillators. This work demonstrates vertically stackable nano-oscillators using an ovonic threshold switch (OTS) for high-density neuromorphic hardware. A vertically stackable Ge0.6Se0.4 OTS-oscillator (VOTS-OSC) is fabricated with a vertical crossbar array structure by growing Ge0.6Se0.4 film conformally on a contact hole structure using atomic layer deposition. The VOTS-OSC can be vertically integrated onto peripheral circuits without causing thermal damage because the fabrication temperature is <400 °C. The fabricated device exhibits oscillation characteristics, which can serve as leaky integrate-and-fire neurons in spiking neural networks (SNNs) and coupled oscillators in oscillatory neural networks (ONNs). For practical applications, pattern recognition and vertex coloring are demonstrated with SNNs and ONNs, respectively, using semiempirical simulations. This structure increases the oscillator integration density significantly, enabling complex tasks with a large number of oscillators. Moreover, it can enhance the computational speed of neural networks due to its rapid switching speed.

Advanced TiO2/Al2O3 Bilayer ALD Coatings for Improved Lithium-Rich Layered Oxide Electrodes

Surface modification is a highly effective strategy for addressing issues in lithium-rich layered oxide (LLO) cathodes, including phase transformation, particle cracking, oxygen gas release, and transition-metal ion dissolution. Existing single-/double-layer coating strategies face drawbacks such as poor component contact and complexity. Herein, we present the results of a low-temperature atomic layer deposition (ALD) process for creating a TiO2/Al2O3 bilayer on composite cathodes made of AS200 (Li1.08Ni0.34Co0.08Mn0.5O2). Electrochemical analysis demonstrates that TiO2/Al2O3-coated LLO electrodes exhibit improved discharge capacities and enhanced capacity retention compared with uncoated samples. The TAA-5/AS200 bilayer-coated electrode, in particular, demonstrates exceptional capacity retention (∼90.4%) and a specific discharge capacity of 146 mAh g-1 after 100 cycles at 1C within the voltage range of 2.2 to 4.6 V. The coated electrodes also show reduced voltage decay, lower surface film resistance, and improved interfacial charge transfer resistances, contributing to enhanced stability. The ALD-deposited TiO2/Al2O3 bilayer coatings exhibit promising potential for advancing the electrochemical performance of lithium-rich layered oxide cathodes in lithium-ion batteries.

Investigation on Contact Properties of 2D van der Waals Semimetallic 1T-TiS2/MoS2 Heterojunctions

Two-dimensional transition metal dichalcogenides (2D TMDCs) are considered promising alternatives to Si as channel materials because of the possibility of retaining their superior electronic transport properties even at atomic body thicknesses. However, the realization of high-performance 2D TMDC field-effect transistors remains a challenge owing to Fermi-level pinning (FLP) caused by gap states and the inherent high Schottky barrier height (SBH) within the metal contact and channel layer. This study demonstrates that high-quality van der Waals (vdW) heterojunction-based contacts can be formed by depositing semimetallic TiS2 onto monolayer (ML) MoS2. After confirming the successful formation of a TiS2/ML MoS2 heterojunction, the contact properties of vdW semimetal TiS2 were thoroughly investigated. With clean interfaces of the TiS2/ML MoS2 heterojunctions, atomic-layer-deposited TiS2 can induce gap-state saturation and suppress FLP. Consequently, compared with conventional evaporated metal electrodes, the TiS2/ML MoS2 heterojunctions exhibit a lower SBH of 8.54 meV and better contact properties. This, in turn, substantially improves the overall performance of the device, including its on-current, subthreshold swing, and threshold voltage. Furthermore, we believe that our proposed strategy for vdW-based contact formation will contribute to the development of 2D materials used in next-generation electronics.

Shear Bond Strength to Enamel, Mechanical Properties and Cellular Studies of Fiber-Reinforced Composites Modified by Depositing SiO2 Nanofilms on Quartz Fibers via Atomic Layer Deposition

Introduction

Poor interfacial bonding between the fibers and resin matrix in fiber-reinforced composites (FRCs) is a significant drawback of the composites. To enhance the mechanical properties of FRC, fibers were modified by depositing SiO2 nanofilms via the atomic layer deposition (ALD) technique. This study aims to evaluate the effect of ALD treatment of the fibers on the mechanical properties of the FRCs.

Methods

The quartz fibers were modified by depositing different cycles (50, 100, 200, and 400) of SiO2 nanofilms via the ALD technique and FRCs were proposed from the modified fibers. The morphologies, surface characterizations of nanofilms, mechanical properties, and cytocompatibility of FRCs were systematically investigated. Moreover, the shear bond strength (SBS) of FRCs to human enamel was also evaluated.

Results

The SEM and SE results showed that the ALD-deposited SiO2 nanofilms have good conformality and homogeneity. According to the results of FTIR and TGA, SiO2 nanofilms and quartz fiber surfaces had good chemical combinations. Three-point bending tests with FRCs showed that the deposited SiO2 nanofilms effectively improved FRCs' strength and Group D underwent 100 deposition cycles and had the highest flexural strength before and after aging. Furthermore, the strength of the FRCs demonstrated a crescendo-decrescendo tendency with SiO2 nanofilm thickness increasing. The SBS results also showed that Group D had outstanding performance. Moreover, the results of cytotoxicity experiments such as cck8, LDH and Elisa, etc., showed that the FRCs have good cytocompatibility.

Conclusion

Changing the number of ALD reaction cycles affects the mechanical properties of FRCs, which may be related to the stress relaxation and fracture between SiO2 nanofilm layers and the built-up internal stresses in the nanofilms. Eventually, the SiO2 nanofilms could enhance the FRCs' mechanical properties and performance to enamel by improving the interfacial bonding strength, and have good cytocompatibility.

Low-Temperature ALD of SbOx /Sb2 Te3 Multilayers with Boosted Thermoelectric Performance

Nanoscale superlattice (SL) structures have proven to be effective in enhancing the thermoelectric (TE) properties of thin films. Herein, the main phase of antimony telluride (Sb2 Te3 ) thin film with sub-nanometer layers of antimony oxide (SbOx ) is synthesized via atomic layer deposition (ALD) at a low temperature of 80 °C. The SL structure is tailored by varying the cycle numbers of Sb2 Te3 and SbOx . A remarkable power factor of 520.8 µW m-1 K-2 is attained at room temperature when the cycle ratio of SbOx and Sb2 Te3 is set at 1:1000 (i.e., SO:ST = 1:1000), corresponding to the highest electrical conductivity of 339.8 S cm-1 . The results indicate that at the largest thickness, corresponding to ten ALD cycles, the SbOx layers act as a potential barrier that filters out the low-energy charge carriers from contributing to the overall electrical conductivity. In addition to enhancing the scattering of the mid-to-long-wavelength at the SbOx /Sb2 Te3 interface, the presence of the SbOx sub-layer induces the confinement effect and strain forces in the Sb2 Te3 thin film, thereby effectively enhancing the Seebeck coefficient and reducing the thermal conductivity. These findings provide a new perspective on the design of SL-structured TE materials and devices.

Review-Extremely Thin Amorphous Indium Oxide Transistors

Amorphous oxide semiconductor transistors have been a mature technology in display panels for upward of a decade, and have recently been considered as promising back-end-of-line compatible channel materials for monolithic 3D applications. However, achieving high-mobility amorphous semiconductor materials with comparable performance to traditional crystalline semiconductors has been a long-standing problem. Recently it has been found that greatly reducing the thickness of indium oxide, enabled by an atomic layer deposition (ALD) process, can tune its material properties to achieve high mobility, high drive current, high on/off ratio, and enhancement-mode operation at the same time, beyond the capabilities of conventional oxide semiconductor materials. In this work, the history leading to the re-emergence of indium oxide, its fundamental material properties, growth techniques with a focus on ALD, state-of-the-art indium oxide device research, and the bias stability of the devices are reviewed.

TiO2/PDA Multilayer Nanocomposites with Exceptionally Sharp Large-Scale Interfaces and Nitrogen Doping Gradient

The evolving field of photocatalysis requires the development of new functional materials, particularly those suitable for large-scale commercial systems. One particularly promising approach is the creation of hybrid organic/inorganic materials. Despite being extensively studied, materials such as polydopamine (PDA) and titanium oxide continue to show significant promise for use in such applications. Nitrogen-doped titanium oxide and free-standing PDA films obtained at the air/water interface are particularly interesting. This study introduces a straightforward and reproducible approach for synthesizing a novel class of large-scale multilayer nanocomposites. The method involves the alternate layering of high-quality materials at the air/water interface combined with precise atomic layer deposition techniques, resulting in a gradient nitrogen doping of titanium oxide layers with exceptionally sharp oxide/polymer interfaces. The analysis confirmed the presence of nitrogen in the interstitial and substitutional sites of the TiO2 lattice while maintaining the 2D-like structure of the PDA films. These chemical and structural characteristics translate into a reduction of the band gap by over 0.63 eV and an increase in the photogenerated current by over 60% compared with pure amorphous TiO2. Furthermore, the nanocomposites demonstrate excellent stability during the 1 h continuous photocurrent generation test.

Atomic layer deposition of SnS2film on a precursor pre-treated substrate

Two-dimensional (2D) materials are attracting attention because of their outstanding physical, chemical, and electrical properties for applications of various future devices such as back-end-of-line field effect transistor (BEOL FET). Among many 2D materials, tin disulfide (SnS2) material is advantageous for low temperature process due to low melting point that can be used for flexible devices and back-end-of-line (BEOL) devices that require low processing temperature. However, low temperature synthesis method has a poor crystallinity for applying to various semiconductor industries. Hence, many studies of improving crystallinity of tin disulfide film are studied for enhancing the quality of film. In this work, we propose a precursor multi-dosing method before deposition of SnS2. This precursor pre-treatment was conducted by atomic layer deposition cycles for more adsorption of precursors to the substrate before deposition. The film quality was analyzed by x-ray diffraction, Raman, transmission electron microscopy, atomic force microscopy and x-ray photoelectron spectroscopy. As a result, more adsorbates by precursor pre-treatment induce higher growth rate and better crystallinity of film.

Dependence of the Metal-Insulator-Semiconductor Schottky Barrier Height on Insulator Composition

The effects of different high-κ tunnel oxides on the metal-insulator-semiconductor Schottky barrier height (ΦB) were systematically investigated. While these high-κ interlayers have been previously observed to affect ΦB, there has never been a clear consensus as to why this ΦB modulation occurs. Changes in ΦB were measured when adding 0.5 nm of seven different high-κ oxides to n-Si/Ni contacts with a thin native silicon oxide also present. Depending on the high-κ oxide composition and ΦB measurement technique, increases in ΦB up to 0.4 eV and decreases up to 0.2 eV with a high-κ introduction were measured. The results were compared to several different hypotheses regarding the effects of tunnel oxides on ΦB. The experimental data correlated most closely with the model of a dipole formed at the SiOx/high-κ interface due to the difference in the oxygen areal density between the two oxides. Knowledge of this relationship will aid in the design of Schottky and ohmic contacts by providing criteria to predict the effects of different oxide stacks on ΦB.

Graded-Band-Gap Zinc-Tin Oxide Thin-Film Transistors with a Vertically Stacked Structure for Wavelength-Selective Photodetection

Filter-free wavelength-selective photodetectors have garnered significant attention due to the growing demand for smart sensors, artificial intelligence, the Internet of Everything, and so forth. However, the challenges associated with large-scale preparation and compatibility with complementary metal-oxide-semiconductor (CMOS) technology limit their wide-ranging applications. In this work, we address the challenges by constructing vertically stacked graded-band-gap zinc-tin oxide (ZTO) thin-film transistors (TFTs) specifically designed for wavelength-selective photodetection. The ZTO thin films with various band gaps are fabricated via atomic layer deposition (ALD) by varying the ALD cycle ratios of zinc oxide (ZnO) and SnO2. The ZTO film with a small Sn ratio exhibits a decreased band gap, and the resultant TFT shows a degraded performance, which can be attributed to the Sn4+ dopant introducing a series of deep-state energy levels in the ZnO band gap. As the ratio of Sn increases further, the band gap of the ZTO also increases, and the mobility of the ZTO TFT increases up to 30 cm2/V s, with a positive shift of the threshold voltage. The photodetectors employing ZTO thin films with distinct band gaps show different spectral responsivities. Then, vertically stacked ZTO (S-ZTO) thin films, with gradient band gaps increasing from the bottom to the top, have been successfully deposited using consecutive ALD technology. The S-ZTO TFT shows decent performance with a mobility of 18.4 cm2/V s, a threshold voltage of 0.5 V, an on-off current ratio higher than 107, and excellent stability under ambient conditions. The resultant S-ZTO TFT also exhibits obviously distinct photoresponses to light at different wavelength ranges. Furthermore, a device array of S-ZTO TFTs demonstrates color imaging by precisely reconstructing patterned illuminations with different wavelengths. Therefore, this work provides CMOS-compatible and structure-compact wavelength-selective photodetectors for advanced and integrable optoelectronic applications.

ALD-Engineered CuxO Overlayers Transform ZnO Nanorods for Selective Production of CO in Electrochemical CO2 Reduction

The electrochemical CO2 reduction reaction (CO2RR) holds tremendous promise as a strategy for lowering atmospheric CO2 levels and creating new clean energy sources. The conversion of CO2RR to CO, in particular, has garnered significant scientific interest due to its industrial feasibility. Within this context, the CuZn-based electrocatalyst presents an attractive alternative to conventional CO-selective electrocatalysts, which are often costly and scarce. Nevertheless, the wide-range utilization of CuZn electrocatalysts requires a more comprehensive understanding of their performance and characteristics. In this study, we synthesized ZnO nanorods through electrodeposition and subsequently coated them with CuxO overlayers prepared by atomic layer deposition (ALD). CuxO significantly enhanced CO selectivity, and 88% CO selectivity at a relatively low potential of -0.8 V was obtained on an optimized CuxO overlayer thickness (CuxO-250/ZnO). The addition of CuxO on ZnO was found to dramatically increase the electrochemical surface area (ESCA), lower the charge-transfer resistance (Rct), and introduce new active sites in the ε-CuZn4 phase. Furthermore, electrochemical Raman spectroscopy results showed that the CuxO-250/ALD electrode developed a ZnO layer on the surface during the CO2RR, while the bare ZnO electrode showed no evidence of ZnO during the reaction. These results suggest that the addition of CuxO by ALD played a crucial role in stabilizing ZnO on the surface. The initial amount of CuxO was shown to further affect the redeposition of the ZnO layer and hence affect the final composition of the surface. We attribute the improvement in CO selectivity to the introduction of both ε-CuZn4 and ZnO that developed during the CO2RR. Overall, our study provides new insights into the dynamic behavior and surface composition of CuZn electrocatalysts during CO2RR.

Ultrathin TiO2 Coatings via Atomic Layer Deposition Strongly Improve Cellular Interactions on Planar and Nanotubular Biomedical Ti Substrates

This work aims to investigate the chemical and/or structural modification of Ti and Ti-6Al-4V (TiAlV) alloy surfaces to possess even more favorable properties toward cell growth. These modifications were achieved by (i) growing TiO2 nanotube layers on these substrates by anodization, (ii) surface coating by ultrathin TiO2 atomic layer deposition (ALD), or (iii) by the combination of both. In particular, an ultrathin TiO2 coating, achieved by 1 cycle of TiO2 ALD, was intended to shade the impurities of F- and V-based species in tested materials while preserving the original structure and morphology. The cell growth on TiO2-coated and uncoated TiO2 nanotube layers, Ti foils, and TiAlV alloy foils were compared after incubation for up to 72 h. For evaluation of the biocompatibility of tested materials, cell lines of different tissue origin, including predominantly MG-63 osteoblastic cells, were used. For all tested nanomaterials, adding an ultrathin TiO2 coating improved the growth of MG-63 cells and other cell lines compared with the non-TiO2-coated counterparts. Here, the presented approach of ultrathin TiO2 coating could be used potentially for improving implants, especially in terms of shading problematic F- and V-based species in TiO2 nanotube layers.

Control of ZIF-62 and ag ZIF-62 Film Thickness within Asymmetric Tubular Supports through Pressure and Dose Time Variation of Atomic Layer Deposition

Thin-films of metal-organic frameworks (MOFs) have widespread potential applications, especially with the emergence of glass-forming MOFs, which remove the inherent issue of grain boundaries and allow coherent amorphous films to be produced. Herein, it is established that atomic layer deposition (ALD) of zinc oxide lends excellent control over the thickness and localization of resultant polycrystalline and glass zeolitic imidazole framework-62 (ZIF-62) thin-films within tubular α-alumina supports. Through the reduction of the chamber pressure and dose times during zinc oxide deposition, the resultant ZIF-62 films are reduced from 38 µm to 16 µm, while the presence of sporadic ZIF-62 (previously forming as far as 280 µm into the support) is prevented. Furthermore, the glass transformation shows a secondary reduction in film thickness from 16 to 2 µm.

De-Pinning Fermi Level and Accelerating Surface Kinetics with an ALD Finish Boost the Fill Factor of BiVO4 Photoanodes to 44

With the rapid development of performance and long-term stability, bismuth vanadate (BiVO4 ) has emerged as the preferred photoanode in photoelectrochemical tandem devices. Although state-of-the-art BiVO4 photoanodes realize a saturated photocurrent density approaching the theoretical maximum, the fill factor (FF) is still inferior, pulling down the half-cell applied bias photon-to-current efficiency (HC-ABPE). Among the major fundamental limitations are the Fermi level pinning and sluggish surface kinetics at the low applied potentials. This work demonstrates that the plasma-assisted atomic layer deposition technique is capable of addressing these issues by seamlessly installing an angstrom-scale FeNi-layer between BiVO4 and electrolyte. Not only this ultrathin FeNi layer serves as an efficient OER cocatalyst, more importantly, it also effectively passivates the surface states of BiVO4 , de-pins the surface Fermi level, and enlarges the built-in voltage, allowing the photoanode to make optimal use of the photogenerated holes for achieving high FF up to 44% and HC-ABPE to 2.2%. This study offers a new approach for enhancing the FF of photoanodes and provides guidelines for designing efficient unassisted solar fuel devices.

Reactive Vapor-Phase Inhibitors for Area-Selective Depositions at Tunable Critical Dimensions

Area-selective depositions (ASD) take advantage of the chemical contrast between material surfaces in device fabrication, where a film can be selectively grown by chemical vapor deposition on metal versus a dielectric, for instance, and can provide a path to nontraditional device architectures as well as the potential to improve existing device fabrication schemes. While ASD can be accessed through a variety of methods, the incorporation of reactive moieties in inhibitors presents several advantages, such as increasing thermal stability and limiting precursor diffusion into the blocking layer. Alkyne-terminated small molecule inhibitors (SMIs)─propargyl, dipropargyl, and tripropargylamine─were evaluated as metal-selective inhibitors. Modeling these SMIs provided insight into the binding mechanism, influence of sterics, and complex polymer network formed from the reaction between inhibitors consisting of alkene, aromatic, and network branchpoints. While a significant contrast in the binding of the SMIs on copper versus a dielectric was observed, residual amounts were detected on the dielectric surfaces, leading to variable ALD growth rates dependent on pattern-critical dimensions. This behavior can be controlled and utilized to direct film growth on patterns only above a critical threshold dimension; below this threshold, both the dielectric and metal features are protected. This method provides another design parameter for ASD processes and may extend its application to broader-ranging device fabrication schemes.

Low Surface Recombination in Hexagonal SiGe Alloy Nanowires: Implications for SiGe-Based Nanolasers

Monolithic integration of silicon-based electronics and photonics could open the door toward many opportunities including on-chip optical data communication and large-scale application of light-based sensing devices in healthcare and automotive; by some, it is considered the Holy Grail of silicon photonics. The monolithic integration is, however, severely hampered by the inability of Si to efficiently emit light. Recently, important progress has been made by the demonstration of efficient light emission from direct-bandgap hexagonal SiGe (hex-SiGe) alloy nanowires. For this promising material, realized by employing a nanowire structure, many challenges and open questions remain before a large-scale application can be realized. Considering that for other direct-bandgap materials like GaAs, surface recombination can be a true bottleneck, one of the open questions is the importance of surface recombination for the photoluminescence efficiency of this new material. In this work, temperature-dependent photoluminescence measurements were performed on both hex-Ge and hex-SiGe nanowires with and without surface passivation schemes that have been well documented and proven effective on cubic silicon and germanium to elucidate whether and to what extent the internal quantum efficiency (IQE) of the wires can be improved. Additionally, time-resolved photoluminescence (TRPL) measurements were performed on unpassivated hex-SiGe nanowires as a function of their diameter. The dependence of the surface recombination on the SiGe composition could, however, not be yet addressed given the sample-to-sample variations of the state-of-the-art hex-SiGe nanowires. With the aforementioned experiments, we demonstrate that at room temperature, under high excitation conditions (a few kW cm-2), the hex-(Si)Ge surface is most likely not a bottleneck for efficient radiative emission under relatively high excitation conditions. This is an important asset for future hex(Si)Ge optoelectronic devices, specifically for nanolasers.

Novel Strategy for High Efficient and Stable Perovskite Solar Cells through Atomic Layer Deposition

The perovskite material has demonstrated conceivable potential as an absorbing material of solar cells. Although the power conversion efficiency of the device based on perovskite has rapidly come to 26%, there are still many factors that affect the further improvement of the photoelectric conversion efficiency. Interface defects are the dominating concern that influence carrier transportation and stability. Here, we report a novel strategy where B2O3 is deposited on the fresh perovskite film by atomic layer deposition technology. The organic atmosphere during atomic layer deposition can effectively regulate the crystallization kinetics of perovskites and promote crystal growth. The B2O3 adsorbed on the perovskite light-absorption layer can effectively reduce the electropositive defects on the surface of the perovskite, such as uncoordinated Pb2+ and I vacancies due to the electron-donating properties of the side O atoms in B2O3. Consequently, the power conversion efficiency of the perovskite solar cell after B2O3 treatment increases to 21.78% from 18.89%. Simultaneously, B2O3 can improve the stability of devices.

Prolonging the Cycle Stability of Anion Redox P3-Type Na0.6Li0.2Mn0.8O2 through Al2O3 Atomic Layer Deposition Surface Modification

Sodium-ion batteries (SIBs) are becoming an alternative option for large-scale energy storage systems owing to their low cost and abundance. The lattice oxygen redox (LOR), which has the potential to increase the reversible capacity of materials, has promoted the development of high-energy cathode materials in SIBs. However, the utilization of oxygen anion redox reactions usually results in harmful lattice oxygen release, which hastens structural deformation and declines electrochemical performance, severely hindering their practical application. Herein, a ribbon-ordered superstructured P3-type Na0.6Li0.2Mn0.8O2 (NLMO) cathode with a uniform Al2O3 coating through atomic layer deposition (ALD) was synthesized. The cycling stability and rate capability of the materials were improved by a proper thickness of the Al2O3 layer. Differential electrochemical mass spectrometry (DEMS) results clearly suggest that the Al2O3 coating can inhibit the CO2 release caused by the highly active surface of the NLMO material. Moreover, the results of transmission electron microscopy (TEM) and etching X-ray photoelectron spectroscopy (XPS) show that the Al2O3 coating can effectively prevent electrolyte and electrode side reactions and the dissolution of Mn. This surface engineering strategy sheds light on the way to prolong the cycling stability of anionic redox cathode materials.

Controlling Nucleation Sites for Metal Oxide Film Growth on Glassy Carbon via Electrochemical Preoxidation

Coating electrode materials with metal oxide thin films can improve the performance of electrocatalysts and charge storage materials. Atomic layer deposition (ALD) enables the deposition of conformal, uniform films on a wide range of electrodes; however, an even film depends on the availability of nucleation sites directly on the electrode surface. Here, we show that the electrochemical oxidation of glassy carbon electrodes prior to the deposition of alumina thin films by ALD leads to more uniform electrochemically passivating films. Cyclic voltammetry (CV), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) demonstrate that film uniformity increases with the increasing potential of preoxidation until 2.50 V versus Ag/AgCl, at which point the films are fully passivating and appear continuous by SEM. Further increasing the potential of preoxidation leads to uniform but less consistently passivating alumina films. These findings show that electrochemical preoxidation is a rapid and readily tunable strategy for controlling oxygenic nucleation sites and therefore the growth of thin metal oxide films on glassy carbon electrodes.

High Voltage Cycling Stability of LiF-Coated NMC811 Electrode

The development of LiNi0.8Mn0.1Co0.1O2 (NMC811) as a cathode material for high-energy-density lithium-ion batteries (LIBs) intends to address the driving limitations of electric vehicles. However, the commercialization of this technology has been hindered by poor cycling stability at high cutoff voltages. The potential instability and drastic capacity fade stem from irreversible parasitic side reactions at the electrode-electrolyte interface. To address these issues, a stable nanoscale lithium fluoride (LiF) coating is deposited on the NMC811 electrode via atomic layer deposition. The nanoscale LiF coating diminishes the direct contact between NMC811 and the electrolyte, suppressing the detrimental parasitic reactions. LiF-NMC811 delivers cycling stability superior to uncoated NMC811 with high cutoff voltage for half-cell (3.0-4.6 V vs Li/Li+) and full-cell (2.8-4.5 V vs graphite) configurations. The structural, morphological, and chemical analyses of the electrodes after cycling show that capacity decline fundamentally arises from the electrode-electrolyte interface growth, irreversible phase transformation, transition metal dissolution and crossover, and particle cracking. Overall, this work demonstrates that LiF is an effective electrode coating for high-voltage cycling without compromising rate performance, even at high discharge rates. The findings of this work highlight the need to stabilize the electrode-electrolyte interface to fully utilize the high-capacity performance of NMC811.

Analyzing the Li-Al-O Interphase of Atomic Layer-Deposited Al2O3 Films on Layered Oxide Cathodes Using Atomistic Simulations

Alumina surface coatings are commonly applied to layered oxide cathode particles for lithium-ion battery applications. Atomic layer deposition (ALD) is one such surface coating technique, and ultrathin alumina ALD films (<2 nm) are shown to improve the electrochemical performance of LiNixMnyCo1-x-yO2 materials, with groups hypothesizing that a beneficial Li-Al-O product is being formed during the alumina ALD process. However, the atomic structure of these films is still not well understood, and quantifying the interface of ultrathin (∼1 nm) ALD films is an arduous experimental task. Here, we perform molecular dynamics simulations of amorphous alumina films of varying thickness in contact with the (0001) LiCoO2 (LCO) surface to quantify the film nanostructure. We calculate elemental mass density profiles through the films and observe that the Li-Al-O interphase extends ∼2 nm from the LCO surface. Additionally, we observe layering of Al and O atoms at the LCO-film interface that extends for ∼1.5 nm. To access the short-range order of the amorphous film, we calculated the Al coordination numbers through the film. We find that while [4]Al is the prevailing coordination environment, significant amounts of [6]Al exist at the interface between the LiCoO2 surface and the film. Taken together, these principal findings point to a pseudomorphic Li-Al-O overlayer that approximates the underlying layered LiCoO2 lattice but does not exactly replicate it. Additionally, with sufficient thickness, the Li-Al-O film transitions to an amorphous alumina structure. We anticipate that our findings on the ALD-like, Li-Al-O film nanostructure can be applied to other layered LiNixMnyCo1-x-yO2 materials because of their shared crystal structure with LiCoO2. This work provides insight into the nanostructure of amorphous ALD alumina films to help inform their use as protective coatings for Li-ion battery cathode active materials.

Tailoring Subthreshold Swing in A-IGZO Thin-Film Transistors for Amoled Displays: Impact of Conversion Mechanism on Peald Deposition Sequences

Amorphous IGZO (a-IGZO) thin-film transistors (TFTs) are standard backplane electronics to power active-matrix organic light-emitting diode (AMOLED) televisions due to their high carrier mobility and negligible low leakage characteristics. Despite their advantages, limitations in color depth arise from a steep subthreshold swing (SS) (≤ 0.1 V/decade), necessitating costly external compensation for IGZO transistors. For mid-size mobile applications such as OLED tablets and notebooks, it is important to ensure controllable SS value (≥ 0.3 V/decade). In this study, a conversion mechanism during plasma-enhanced atomic layer deposition (PEALD) is proposed as a feasible route to control the SS. When a pulse of a diethylzinc (DEZn) precursor is exposed to the M2 O3 (M = In or Ga) surface layer, partial conversion of the underlying M2 O3 to ZnO is predicted on the basis of density function theory calculations. Notably, significant distinctions between In-Ga-Zn (Case I) and In-Zn-Ga (Case II) films are observed: Case II exhibits a lower growth rate and larger Ga/In ratio. Case II TFTs with a-IGZO (subcycle ratio of In:Ga:Zn = 3:1:1) show reasonable SS values (313 mV decade-1 ) and high mobility (µFE ) of 29.3 cm2 Vs-1 (Case I: 84 mV decade-1 and 33.4 cm2 Vs-1 ). The rationale for Case II's reasonable SS values is discussed, attributing it to the plausible formation of In-Zn defects, supported by technology computer-aided design (TCAD) simulations.

Orientational analysis of atomic pair correlations in nanocrystalline indium oxide thin films

The application of grazing-incidence total X-ray scattering (GITXS) for pair distribution function (PDF) analysis using >50 keV X-rays from synchrotron light sources has created new opportunities for structural characterization of supported thin films with high resolution. Compared with grazing-incidence wide-angle X-ray scattering, which is only useful for highly ordered materials, GITXS/PDFs expand such analysis to largely disordered or nanostructured materials by examining the atomic pair correlations dependent on the direction relative to the surface of the supporting substrate. A characterization of nanocrystalline In2O3-derived thin films is presented here with in-plane-isotropic and out-of-plane-anisotropic orientational ordering of the atomic structure, each synthesized using different techniques. The atomic orientations of such films are known to vary based on the synthetic conditions. Here, an azimuthal orientational analysis of these films using GITXS with a single incident angle is shown to resolve the markedly different orientations of the atomic structures with respect to the planar support and the different degrees of long-range order, and hence, the terminal surface chemistries. It is anticipated that orientational analysis of GITXS/PDF data will offer opportunities to extend structural analyses of thin films by providing a means to qualitatively determine the major atomic orientation within nanocrystalline and, eventually, non-crystalline films.

Suppressed Ion Migration in FA-Rich Perovskite Photovoltaics through Enhanced Nucleation of Encapsulation Interface

With excellent homogeneity, compactness and controllable thickness, atomic layer deposition (ALD) technology is widely used in perovskite solar cells (PSCs). However, residual organic sources and undesired reactions pose serious challenges to device performance as well as stability. Here, ester groups of poly(ethylene-co-vinyl acetate) are introduced as a reaction medium to promote the nucleation and complete conversion of tetrakis(dimethylamino)tin(IV) (TDMA-Sn). Through simulations and experiments, it is verified that ester groups as Lewis bases can coordinate with TDMA-Sn to facilitate homogeneous deposition of ALD-SnOx , which acts as self-encapsulated interface with blocking properties against external moisture as well as internal ion migration. Meanwhile, a comprehensive evaluation of the self-encapsulated interface reveals that the energy level alignment is optimized to improve the carrier transport. Finally, the self-encapsulated device obtains a champion photovoltaic conversion efficiency (PCE) of 22.06% and retains 85% of the initial PCE after being stored at 85 °C with relative humidity of 85% for more than 800 h.

Subtractive Patterning of Nanoscale Thin Films Using Acid-Based Electrohydrodynamic-Jet Printing

As an alternative to traditional photolithography, printing processes are widely explored for the patterning of customizable devices. However, to date, the majority of high-resolution printing processes for functional nanomaterials are additive in nature. To complement additive printing, there is a need for subtractive processes, where the printed ink results in material removal, rather than addition. In this study, a new subtractive patterning approach that uses electrohydrodynamic-jet (e-jet) printing of acid-based inks to etch nanoscale zinc oxide (ZnO) thin films deposited using atomic layer deposition (ALD) is introduced. By tuning the printing parameters, the depth and linewidth of the subtracted features can be tuned, with a minimum linewidth of 11 µm and a tunable channel depth with ≈5 nm resolution. Furthermore, by tuning the ink composition, the volatility and viscosity of the ink can be adjusted, resulting in variable spreading and dissolution dynamics at the solution/film interface. In the future, acid-based subtractive patterning using e-jet printing can be used for rapid prototyping or customizable manufacturing of functional devices on a range of substrates with nanoscale precision.

Prompt Hole Extraction Suppresses V5+ Dissolution and Sustains Large-Area BiVO4 Photoanodes for Over 2100 h Water Oxidation

Nanostructured bismuth vanadate (BiVO4) is at the forefront of emerging photoanodes in photoelectrochemical tandem devices for solar water splitting owing to the suitable band edge position and efficient charge separation capability. However, the (photo)chemical corrosion involving V5+ dissolution limits the long-term stability of BiVO4. Herein, guided by DFT calculations, we introduce an ALD-derived NiOx catalyst layer on BiVO4 to stabilize the surface Bi-O bonds, facilitate hole extraction, and thus suppress the V5+ dissolution. At the same time, the ALD NiOx catalyst layer could efficiently suppress the surface recombination and accelerate the surface OER kinetics, boosting the half-cell applied bias photon-to-current efficiency of BiVO4 to 2.05%, as well as a fill factor of 47.1%. By adding trace NaVO3 to the electrolyte, the NiOx/BiVO4 photoanode with an illumination area of 10.5 cm2 shows a record operational stability of more than 2100 h.

Surface-Modified Carbon Nanotubes with Ultrathin Co3O4 Layer for Enhanced Oxygen Evolution Reaction

Alkaline water electrolysis is a vital technology for sustainable and efficient hydrogen production. However, the oxygen evolution reaction (OER) at the anode suffers from sluggish kinetics, requiring overpotential. Precious metal-based electrocatalysts are commonly used but face limitations in cost and availability. Carbon nanostructures, such as carbon nanotubes (CNTs), offer promising alternatives due to their abundant active sites and efficient charge-transfer properties. Surface modification of CNTs through techniques such as pulsed laser ablation in liquid media (PLAL) can enhance their catalytic performance. In this study, we investigate the role of surface-modified carbon (SMC) as a support to increase the active sites of transition metal-based electrocatalysts and its impact on electrocatalytic performance for the OER. We focus on Co3O4@SMC heterostructures, where an ultrathin layer of Co3O4 is deposited onto SMCs using a combination of PLAL and atomic layer deposition. A comparative analysis with aggregated Co3O4 and Co3O4@pristine CNTs reveals the superior OER performance of Co3O4@SMC. The optimized Co3O4@SMC exhibits a 25.6% reduction in overpotential, a lower Tafel slope, and a significantly higher turnover frequency (TOF) in alkaline water splitting. The experimental results, combined with density functional theory (DFT) calculations, indicate that these improvements can be attributed to the high electrocatalytic activity of Co3O4 as active sites achieved through the homogeneous distribution on SMCs. The experimental methodology, morphology, composition, and their correlation with activity and stability of Co3O4@SMC for the OER in alkaline media are discussed in detail. This study contributes to the understanding of SMC-based heterostructures and their potential for enhancing electrocatalytic performance in alkaline water electrolysis.

Recent Developments in Atomic Layer Deposition of Functional Overlayers in Perovskite Solar Cells

Over the last decade, research in organic-inorganic lead halide perovskite solar cells (PSCs) has gathered unprecedented momentum, putting the technology on the brink of full-scale commercialization. A wide range of strategies have been implemented for enhancing the power conversion efficiency of devices and modules, as well as improving stability toward high levels of irradiation, temperature, and humidity. Another key element in the path to commercialization is the scalability of device manufacturing, which requires large-scale deposition of conformal layers without compromising the delicate structure of the perovskite film. In this context, atomic layer deposition (ALD) tools excel in depositing high-quality conformal films with precise control of film composition and thickness over large areas at relatively low processing temperatures. In this commentary, we will briefly outline recent progress in PSC technology enabled by ALD tools, focusing on layers deposited above the absorber layer. These interlayers include charge transport layers, passivation layers, buffer layers, and encapsulation techniques. Additionally, we will discuss some of the challenges and potential avenues for research in PSC technology underpinned by ALD tools.

Novel Energetic Co-Reactant for Thermal Oxide Atomic Layer Deposition: The Impact of Plasma-Activated Water on Al2O3 Film Growth

In the presented study, a novel approach for thermal atomic layer deposition (ALD) of Al2O3 thin films using plasma-activated water (PAW) as a co-reactant, replacing traditionally employed deionized (DI) water, is introduced. Utilizing ex situ PAW achieves up to a 16.4% increase in the growth per cycle (GPC) of Al2O3 films, consistent with results from plasma-enhanced atomic layer deposition (PEALD). Time-resolved mass spectrometry (TRMS) revealed disparities in CH4 partial pressures between TMA reactions with DI water and PAW, with PAW demonstrating enhanced reactivity. Reactive oxygen species (ROS), namely H2O2 and O3, are posited to activate Si(100) substrate sites, thereby improving GPC and film quality. Specifically, Al2O3 films grown with PAW pH = 3.1 displayed optimal stoichiometry, reduced carbon content, and an expanded bandgap. This study thus establishes "PAW-ALD" as a descriptor for this ALD variation and highlights the significance of comprehensive assessments of PAW in ALD processes.

Label-Free, Impedance-Based Biosensor for Kidney Disease Biomarker Uromodulin

We demonstrate the development of a label-free, impedance-based biosensor by using a passivation layer of 50-nm tantalum pentoxide (Ta2O5) on interdigitated electrodes (IDE). This layer was fabricated by atomic layer deposition (ALD) and has a high dielectric constant (high-κ), which improves the capacitive property of the IDE. We validate the biosensor's performance by measuring uromodulin, a urine biomarker for kidney tubular damage, from artificial urine samples. The passivation layer is functionalized with uromodulin antibodies for selective binding. The passivated IDE enables the non-faradaic impedance measurement of uromodulin concentrations with a measurement range from 0.5 ng/mL to 8 ng/mL and with a relative change in impedance of 15 % per ng/mL at a frequency of 150 Hz (log scale). This work presents a concept for point-of-care biosensing applications for disease biomarkers.

Flexible Li-CO2 Batteries with Boosted Reaction Kinetics and Cyclelife Enabled by Heterostructured Mo3 N2 @TiN Cathode and Interface-protected Li Anode

With theoretically endowing with high energy densities and environmentally friendly carbon neutralization ability, flexible fiber-shaped Li-CO2 battery emerges as a multipurpose platform for next-generation wearable electronics. Nevertheless, the ineluctable issues faced by cathode catalysts and Li anodes have brought enormous obstacles to the development of flexible fiber-shaped Li-CO2 batteries. Herein, a flexible fiber-shaped Li-CO2 battery based on Mo3 N2 cathode coating with atomic layer deposited TiN and Li3 N protected Li anode is constructed. Owing to the regulation surface electrons of Mo3 N2 by TiN, heterostructured cathode has more delocalized electrons which enable cathodes to stabilize 2-electron intermediate products Li2 C2 O4 by electron bridge bonds and avoid disproportionation into Li2 CO3 . Li3 N layers not only accelerate Li+ transportation but also avoid contact between Li and CO2 to form Li2 CO3 . Thus, the constructed Li-CO2 battery demonstrates a low charge potential of 3.22 V, low overpotential of 0.56 V, outstanding rate capabilities up to 1 A g-1 , and excellent long-term cycling (≈2000 h) with an energy efficiency of ≈80%. The fabricated flexible fiber-shaped Li-CO2 battery shows an ultrahigh energy density of 14 772.5 Wh kg-1 based on cathodes (340.8 Wh kg-1 based on device mass), and outstanding deformations adaptability, giving it great potential for wearable electronics.

Precursor Induced Assembly of Si Nanoparticles Encapsulated in Graphene/Carbon Matrices and the Influence of Al2 O3 Coating on their Properties as Anode for Lithium-Ion Batteries

The theoretical capacity of pristine silicon as anodes for lithium-ion batteries (LIBs) can reach up to 4200 mAh g-1 , however, the low electrical conductivity and the huge volume expansion limit their practical application. To address this challenge, a precursor strategy has been explored to induce the curling of graphene oxide (GO) flakes and the enclosing of Si nanoparticles by selecting protonated chitosan as both assembly inducer and carbon precursor. The Si nanoparticles are dispersed first in a slurry of GO by ball milling, then the resulting dispersion is dried by a spray drying process to achieve instantaneous solution evaporation and compact encapsulation of silicon particles with GO. An Al2 O3 layer is constructed on the surface of Si@rGO@C-SD composites by the atomic layer deposition method to modify the solid electrolyte interface. This strategy enhances obviously the electrochemical performance of the Si as anode for LIBs, including excellent long-cycle stability of 930 mAh g-1 after 1000 cycles at 1000 mA g-1 , satisfied initial Coulomb efficiency of 76.7%, and high rate ability of 806 mAh g-1 at 5000 mA g-1 . This work shows a potential solution to the shortcomings of Si-based anodes and provides meaningful insights for constructing high-energy anodes for LIBs.

Controllable interface-tailored strategy to reduce the nanotribological properties of Ti3C2Txby depositing MoS2using atomic layer deposition

Ti3C2TxMXene has attracted widespread attention in lubrication owing to its unique structure and surface properties. However, the inferior nanotribological properties of Ti3C2Txstill limit its applications in nano lubricants. Herein, we propose a controllable interface-tailored strategy to reduce the nanotribological properties of Ti3C2Txby depositing MoS2nano-sheet on its surface using atomic layer deposition (ALD). The nanotribological properties of the MoS2/Ti3C2Txnanocomposites synthesized by ALD are studied by atomic force microscope for the first time. At the optimal 20 ALD MoS2cycles, the nanofriction of MoS2/Ti3C2Txhas been reduced by 57%, 46%, and 44% (at 5, 10, and 15 nN load, respectively), while the adhesion has been reduced by 59%, compared to the original Ti3C2Tx. The results can contribute to understanding of the nanotribological mechanisms of Ti3C2Txcomposites and provide the potential prospects for Ti3C2Txas a nanoscale adjustable lubricant.

Atomic Layer Deposition of Antibacterial Nanocoatings: A Review

In recent years, antibacterial coatings have become an important approach in the global fight against bacterial pathogens. Developments in materials science, chemistry, and biochemistry have led to a plethora of materials and chemical compounds that have the potential to create antibacterial coatings. However, insufficient attention has been paid to the analysis of the techniques and technologies used to apply these coatings. Among the various inorganic coating techniques, atomic layer deposition (ALD) is worthy of note. It enables the successful synthesis of high-purity inorganic nanocoatings on surfaces of complex shape and topography, while also providing precise control over their thickness and composition. ALD has various industrial applications, but its practical application in medicine is still limited. In recent years, a considerable number of papers have been published on the proposed use of thin films and coatings produced via ALD in medicine, notably those with antibacterial properties. The aim of this paper is to carefully evaluate and analyze the relevant literature on this topic. Simple oxide coatings, including TiO2, ZnO, Fe2O3, MgO, and ZrO2, were examined, as well as coatings containing metal nanoparticles such as Ag, Cu, Pt, and Au, and mixed systems such as TiO2-ZnO, TiO2-ZrO2, ZnO-Al2O3, TiO2-Ag, and ZnO-Ag. Through comparative analysis, we have been able to draw conclusions on the effectiveness of various antibacterial coatings of different compositions, including key characteristics such as thickness, morphology, and crystal structure. The use of ALD in the development of antibacterial coatings for various applications was analyzed. Furthermore, assumptions were made about the most promising areas of development. The final section provides a comparison of different coatings, as well as the advantages, disadvantages, and prospects of using ALD for the industrial production of antibacterial coatings.

Atomic Layer Deposition of Cu Electrocatalysts on Gas Diffusion Electrodes for CO2 Reduction

Electrochemical reduction of CO2 using Cu catalysts enables the synthesis of C2+ products including C2H4 and C2H5OH. In this study, Cu catalysts were fabricated using plasma-enhanced atomic layer deposition (PEALD), achieving conformal deposition of catalysts throughout 3-D gas diffusion electrode (GDE) substrates while maintaining tunable control of Cu nanoparticle size and areal loading. The electrochemical CO2 reduction at the Cu surface yielded a total Faradaic efficiency (FE) > 75% for C2+ products. Parasitic hydrogen evolution was minimized to a FE of ∼10%, and a selectivity of 42.2% FE for C2H4 was demonstrated. Compared to a line-of-sight physical vapor deposition method, PEALD Cu catalysts show significant suppression of C1 products compared to C2+, which is associated with improved control of catalyst morphology and conformality within the porous GDE substrate. Finally, PEALD Cu catalysts demonstrated a stable performance for 15 h with minimal reduction in the C2H4 production rate.

Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone

Polycrystalline SnO2 thin films were grown by atomic layer deposition (ALD) on SiO2/Si(100) substrates from SnI4 and O3. Suitable evaporation temperatures for the SnI4 precursor as well as the relationship between growth per cycle and substrate temperature were determined. Crystal growth in the films in the temperature range of 225-600 °C was identified. Spectroscopic analyses revealed low amounts of residual iodine and implied the formation of single-phase oxide in the films grown at temperatures above 300 °C. Appropriateness of the mentioned precursor system to the preparation of SnO2 films was established.

Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In2O3 and Application to High-Performance Field-Effect Transistors

Indium oxide (In2O3) is a transparent wide-bandgap semiconductor suitable for use in the back-end-of-line-compatible channel layers of heterogeneous monolithic three-dimensional (M3D) devices. The structural, chemical, and electrical properties of In2O3 films deposited by plasma-enhanced atomic layer deposition (PEALD) were examined using two different liquid-based precursors: (3-(dimethylamino)propyl)-dimethyl indium (DADI) and (N,N-dimethylbutylamine)trimethylindium (DATI). DATI-derived In2O3 films had higher growth per cycle (GPC), superior crystallinity, and low defect density compared with DADI-derived In2O3 films. Density functional theory calculations revealed that the structure of DATI can exhibit less steric hindrance compared with that of DADI, explaining the superior physical and electrical properties of the DATI-derived In2O3 film. DATI-derived In2O3 field-effect transistors (FETs) exhibited unprecedented performance, showcasing a high field-effect mobility of 115.8 cm2/(V s), a threshold voltage of -0.12 V, and a low subthreshold gate swing value of <70 mV/decade. These results were achieved by employing a 10-nm-thick HfO2 gate dielectric layer with an effective oxide thickness of 3.9 nm. Both DADI and DATI-derived In2O3 FET devices exhibited remarkable stability under bias stress conditions due to a high-quality In2O3 channel layer, good gate dielectric/channel interface matching, and a suitable passivation layer. These findings underscore the potential of ALD In2O3 films as promising materials for upper-layer channels in the next generation of M3D devices.

Optimal Coatings of Co3 O4 Anodes for Acidic Water Electrooxidation

Implementation of proton-exchange membrane water electrolyzers for large-scale sustainable hydrogen production requires the replacement of scarce noble-metal anode electrocatalysts with low-cost alternatives. However, such earth-abundant materials often exhibit inadequate stability and/or catalytic activity at low pH, especially at high rates of the anodic oxygen evolution reaction (OER). Here, the authors explore the influence of a dielectric nanoscale-thin oxide layer, namely Al2 O3 , SiO2 , TiO2 , SnO2 , and HfO2 , prepared by atomic layer deposition, on the stability and catalytic activity of low-cost and active but insufficiently stable Co3 O4 anodes. It is demonstrated that the ALD layers improve both the stability and activity of Co3 O4 following the order of HfO2 > SnO2 > TiO2 > Al2 O3 , SiO2 . An optimal HfO2 layer thickness of 12 nm enhances the Co3 O4 anode durability by more than threefold, achieving over 42 h of continuous electrolysis at 10 mA cm-2 in 1 m H2 SO4 electrolyte. Density functional theory is used to investigate the superior performance of HfO2 , revealing a major role of the HfO2 |Co3 O4 interlayer forces in the stabilization mechanism. These insights offer a potential strategy to engineer earth-abundant materials for low-pH OER catalysts with improved performance from earth-abundant materials for efficient hydrogen production.

Stearic Acid as an Atomic Layer Deposition Inhibitor: Spectroscopic Insights from AFM-IR

Modern-day chip manufacturing requires precision in placing chip materials on complex and patterned structures. Area-selective atomic layer deposition (AS-ALD) is a self-aligned manufacturing technique with high precision and control, which offers cost effectiveness compared to the traditional patterning techniques. Self-assembled monolayers (SAMs) have been explored as an avenue for realizing AS-ALD, wherein surface-active sites are modified in a specific pattern via SAMs that are inert to metal deposition, enabling ALD nucleation on the substrate selectively. However, key limitations have limited the potential of AS-ALD as a patterning method. The choice of molecules for ALD blocking SAMs is sparse; furthermore, deficiency in the proper understanding of the SAM chemistry and its changes upon metal layer deposition further adds to the challenges. In this work, we have addressed the above challenges by using nanoscale infrared spectroscopy to investigate the potential of stearic acid (SA) as an ALD inhibiting SAM. We show that SA monolayers on Co and Cu substrates can inhibit ZnO ALD growth on par with other commonly used SAMs, which demonstrates its viability towards AS-ALD. We complement these measurements with AFM-IR, which is a surface-sensitive spatially resolved technique, to obtain spectral insights into the ALD-treated SAMs. The significant insight obtained from AFM-IR is that SA SAMs do not desorb or degrade with ALD, but rather undergo a change in substrate coordination modes, which can affect ALD growth on substrates.