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Zhang N, Cui M, Zhou J, Shao Z, Gao X, Liu J, Sun R, Zhang Y, Li W, Li X, Yao J, Gao F, Feng W. High-Performance Self-Powered Photoelectrochemical Ultraviolet Photodetectors Based on an In 2O 3 Nanocube Film. ACS Appl Mater Interfaces 2024; 16:19167-19174. [PMID: 38569197 DOI: 10.1021/acsami.4c00801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/05/2024]
Abstract
Ultraviolet photodetectors (UV PDs) have attracted significant attention due to their wide range of applications, such as underwater communication, biological analysis, and early fire warning systems. Indium oxide (In2O3) is a candidate for developing high-performance photoelectrochemical (PEC)-type UV PDs owing to its high UV absorption and good stability. However, the self-powered photoresponse of the previously reported In2O3-based PEC UV PDs is unsatisfactory. In this work, high-performance self-powered PEC UV PDs were constructed by using an In2O3 nanocube film (NCF) as a photoanode. In2O3 NCF photoanodes were synthesized on FTO by using hydrothermal methods with a calcining process. The influence of the electrolyte concentration, bias potential, and irradiation light on the photoresponse properties was systematically studied. In2O3 NCF PEC UV PDs exhibit outstanding self-powered photoresponses to 365 nm UV light with a high responsivity of 44.43 mA/W and fast response speed (20/30 ms) under zero bias potential, these results are superior to those of previously reported In2O3-based PEC UV PDs. The improved self-powered photoresponse is attributed to the higher photogenerated carrier separation efficiency and faster charge transport of the in-situ grown In2O3 NCF. In addition, these PDs exhibit excellent multicycle stability, maintaining the photocurrent at 98.69% of the initial value after 700 optical switching cycles. Therefore, our results prove the great promise of In2O3 in self-powered PEC UV PDs.
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Affiliation(s)
- Nana Zhang
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Mengqi Cui
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Junxin Zhou
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Zhitao Shao
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Xinyu Gao
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Jiaming Liu
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Ruyu Sun
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Yuan Zhang
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Wenhui Li
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Xinghan Li
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Jing Yao
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
| | - Feng Gao
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
| | - Wei Feng
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
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Fan C, Yang J, Mehrez JAA, Zhang Y, Quan W, Wu J, Liu X, Zeng M, Hu N, Wang T, Tian B, Fan X, Yang Z. Mesoporous and Encapsulated In 2O 3/Ti 3C 2T x Schottky Heterojunctions for Rapid and ppb-Level NO 2 Detection at Room Temperature. ACS Sens 2024. [PMID: 38401047 DOI: 10.1021/acssensors.3c02466] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/26/2024]
Abstract
Rapid and ultrasensitive detection of toxic gases at room temperature is highly desired in health protection but presents grand challenges in the sensing materials reported so far. Here, we present a gas sensor based on novel zero dimensional (0D)/two dimensional (2D) indium oxide (In2O3)/titanium carbide (Ti3C2Tx) Schottky heterostructures with a high surface area and rich oxygen vacancies for parts per billion (ppb) level nitrogen dioxide (NO2) detection at room temperature. The In2O3/Ti3C2Tx gas sensor exhibits a fast response time (4 s), good response (193.45% to 250 ppb NO2), high selectivity, and excellent cycling stability. The rich surface oxygen vacancies play the role of active sites for the adsorption of NO2 molecules, and the Schottky junctions effectively adjust the charge-transfer behavior through the conduction tunnel in the sensing material. Furthermore, In2O3 nanoparticles almost fully cover the Ti3C2Tx nanosheets which can avoid the oxidation of Ti3C2Tx, thus contributing to the good cycling stability of the sensing materials. This work sheds light on the sensing mechanism of heterojunction nanostructures and provides an efficient pathway to construct high-performance gas sensors through the rational design of active sites.
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Affiliation(s)
- Chao Fan
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
| | - Jianhua Yang
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
| | - Jaafar Abdul-Aziz Mehrez
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
| | - Yongwei Zhang
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
| | - Wenjing Quan
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
| | - Jian Wu
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
| | - Xue Liu
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
| | - Min Zeng
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
| | - Nantao Hu
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
| | - Tao Wang
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
| | - Bing Tian
- Digital Grid Research Institute, China Southern Power Grid Corporation, Guangzhou 510700, P. R. China
| | - Xiaopeng Fan
- Digital Grid Research Institute, China Southern Power Grid Corporation, Guangzhou 510700, P. R. China
| | - Zhi Yang
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
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3
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Lee HY, Hur JS, Cho I, Choi CH, Yoon SH, Kwon Y, Shong B, Jeong JK. Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In 2O 3 and Application to High-Performance Field-Effect Transistors. ACS Appl Mater Interfaces 2023. [PMID: 37877895 DOI: 10.1021/acsami.3c11796] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Subscribe] [Scholar Register] [Indexed: 10/26/2023]
Abstract
Indium oxide (In2O3) is a transparent wide-bandgap semiconductor suitable for use in the back-end-of-line-compatible channel layers of heterogeneous monolithic three-dimensional (M3D) devices. The structural, chemical, and electrical properties of In2O3 films deposited by plasma-enhanced atomic layer deposition (PEALD) were examined using two different liquid-based precursors: (3-(dimethylamino)propyl)-dimethyl indium (DADI) and (N,N-dimethylbutylamine)trimethylindium (DATI). DATI-derived In2O3 films had higher growth per cycle (GPC), superior crystallinity, and low defect density compared with DADI-derived In2O3 films. Density functional theory calculations revealed that the structure of DATI can exhibit less steric hindrance compared with that of DADI, explaining the superior physical and electrical properties of the DATI-derived In2O3 film. DATI-derived In2O3 field-effect transistors (FETs) exhibited unprecedented performance, showcasing a high field-effect mobility of 115.8 cm2/(V s), a threshold voltage of -0.12 V, and a low subthreshold gate swing value of <70 mV/decade. These results were achieved by employing a 10-nm-thick HfO2 gate dielectric layer with an effective oxide thickness of 3.9 nm. Both DADI and DATI-derived In2O3 FET devices exhibited remarkable stability under bias stress conditions due to a high-quality In2O3 channel layer, good gate dielectric/channel interface matching, and a suitable passivation layer. These findings underscore the potential of ALD In2O3 films as promising materials for upper-layer channels in the next generation of M3D devices.
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Affiliation(s)
- Ho Young Lee
- Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Jae Seok Hur
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Iaan Cho
- Department of Chemical Engineering, Hongik University, Seoul 04066, Republic of Korea
| | - Cheol Hee Choi
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Seong Hun Yoon
- Department of Display Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Yongwoo Kwon
- Department of Materials Science and Engineering, Hongik University, Seoul 04066, Republic of Korea
| | - Bonggeun Shong
- Department of Chemical Engineering, Hongik University, Seoul 04066, Republic of Korea
| | - Jae Kyeong Jeong
- Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, Republic of Korea
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
- Department of Display Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea
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4
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Gericke SM, Kauppinen MM, Wagner M, Riva M, Franceschi G, Posada-Borbón A, Rämisch L, Pfaff S, Rheinfrank E, Imre AM, Preobrajenski AB, Appelfeller S, Blomberg S, Merte LR, Zetterberg J, Diebold U, Grönbeck H, Lundgren E. Effect of Different In 2O 3(111) Surface Terminations on CO 2 Adsorption. ACS Appl Mater Interfaces 2023; 15:45367-45377. [PMID: 37704018 PMCID: PMC10540140 DOI: 10.1021/acsami.3c07166] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Accepted: 08/07/2023] [Indexed: 09/15/2023]
Abstract
In2O3-based catalysts have shown high activity and selectivity for CO2 hydrogenation to methanol; however, the origin of the high performance of In2O3 is still unclear. To elucidate the initial steps of CO2 hydrogenation over In2O3, we have combined X-ray photoelectron spectroscopy and density functional theory calculations to study the adsorption of CO2 on the In2O3(111) crystalline surface with different terminations, namely, the stoichiometric, reduced, and hydroxylated surface. The combined approach confirms that the reduction of the surface results in the formation of In adatoms and that water dissociates on the surface at room temperature. A comparison of the experimental spectra and the computed core-level shifts (using methanol and formic acid as benchmark molecules) suggests that CO2 adsorbs as a carbonate on all three surface terminations. We find that the adsorption of CO2 is hindered by hydroxyl groups on the hydroxylated surface.
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Affiliation(s)
| | - Minttu M. Kauppinen
- Department
of Physics and Competence Centre for Catalysis, Chalmers University of Technology, 41296 Göteborg, Sweden
| | - Margareta Wagner
- Institute
of Applied Physics, Technische Universität
Wien, 1040 Vienna, Austria
| | - Michele Riva
- Institute
of Applied Physics, Technische Universität
Wien, 1040 Vienna, Austria
| | - Giada Franceschi
- Institute
of Applied Physics, Technische Universität
Wien, 1040 Vienna, Austria
| | - Alvaro Posada-Borbón
- Department
of Physics and Competence Centre for Catalysis, Chalmers University of Technology, 41296 Göteborg, Sweden
| | - Lisa Rämisch
- Division
of Combustion Physics, Lund University, 22100 Lund, Sweden
| | - Sebastian Pfaff
- Division
of Combustion Physics, Lund University, 22100 Lund, Sweden
| | - Erik Rheinfrank
- Institute
of Applied Physics, Technische Universität
Wien, 1040 Vienna, Austria
| | - Alexander M. Imre
- Institute
of Applied Physics, Technische Universität
Wien, 1040 Vienna, Austria
| | | | | | - Sara Blomberg
- Department
of Chemical Engineering, Lund University, 22100 Lund, Sweden
| | - Lindsay R. Merte
- Department
of Materials Science and Applied Mathematics, Malmö University, 20506 Malmö, Sweden
| | - Johan Zetterberg
- Division
of Combustion Physics, Lund University, 22100 Lund, Sweden
| | - Ulrike Diebold
- Institute
of Applied Physics, Technische Universität
Wien, 1040 Vienna, Austria
| | - Henrik Grönbeck
- Department
of Physics and Competence Centre for Catalysis, Chalmers University of Technology, 41296 Göteborg, Sweden
| | - Edvin Lundgren
- Division
of Synchrotron Radiation Research, Lund
University, 22100 Lund, Sweden
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5
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Ikim MI, Gromov VF, Gerasimov GN, Spiridonova EY, Erofeeva AR, Kurmangaleev KS, Polunin KS, Ilegbusi OJ, Trakhtenberg LI. Structure, Conductivity, and Sensor Properties of Nanosized ZnO-In 2O 3 Composites: Influence of Synthesis Method. Micromachines (Basel) 2023; 14:1685. [PMID: 37763848 PMCID: PMC10535064 DOI: 10.3390/mi14091685] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/24/2023] [Revised: 08/25/2023] [Accepted: 08/27/2023] [Indexed: 09/29/2023]
Abstract
The influence of the method used for synthesizing ZnO-In2O3 composites (nanopowder mixing, impregnation, and hydrothermal method) on the structure, conductivity, and sensor properties is investigated. With the nanopowder mixing, the size of the parent nanoparticles in the composite remains practically unchanged in the range of 50-100 nm. The impregnation composites consist of 70 nm In2O3 nanoparticles with ZnO nanoclusters < 30 nm in size located on its surface. The nanoparticles in the hydrothermal composites have a narrow size distribution in the range of 10-20 nm. The specific surface of hydrothermal samples is five times higher than that of impregnated samples. The sensor response of the impregnated composite to 1100 ppm H2 is 1.3-1.5 times higher than the response of the mixed composite. Additives of 15-20 and 85 wt.% ZnO to mixed and impregnated composites lead to an increase in the response compared with pure In2O3. In the case of hydrothermal composite, up to 20 wt.% ZnO addition leads to a decrease in response, but 65 wt.% ZnO addition increases response by almost two times compared with pure In2O3. The sensor activity of a hydrothermal composite depends on the phase composition of In2O3. The maximum efficiency is reached for the composite containing cubic In2O3 and the minimum for rhombohedral In2O3. An explanation is provided for the observed effects.
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Affiliation(s)
- Mariya I Ikim
- N.N. Semenov Federal Research Center for Chemical Physics of RAS, Moscow 119991, Russia
| | - Vladimir F Gromov
- N.N. Semenov Federal Research Center for Chemical Physics of RAS, Moscow 119991, Russia
| | - Genrikh N Gerasimov
- N.N. Semenov Federal Research Center for Chemical Physics of RAS, Moscow 119991, Russia
| | - Elena Y Spiridonova
- N.N. Semenov Federal Research Center for Chemical Physics of RAS, Moscow 119991, Russia
| | - Anastasiya R Erofeeva
- N.N. Semenov Federal Research Center for Chemical Physics of RAS, Moscow 119991, Russia
| | - Kairat S Kurmangaleev
- N.N. Semenov Federal Research Center for Chemical Physics of RAS, Moscow 119991, Russia
| | - Kirill S Polunin
- N.N. Semenov Federal Research Center for Chemical Physics of RAS, Moscow 119991, Russia
| | - Olusegun J Ilegbusi
- Department of Mechanical and Aerospace Engineering, University of Central Florida, Orlando, FL 32816, USA
| | - Leonid I Trakhtenberg
- N.N. Semenov Federal Research Center for Chemical Physics of RAS, Moscow 119991, Russia
- Chemical Faculty, Lomonosov Moscow State University, Moscow 119991, Russia
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6
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Ham J, Kim HU, Jeon N. Key Factors in Enhancing Pseudocapacitive Properties of PANI-InO x Hybrid Thin Films Prepared by Sequential Infiltration Synthesis. Polymers (Basel) 2023; 15:2616. [PMID: 37376262 DOI: 10.3390/polym15122616] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/11/2023] [Revised: 06/01/2023] [Accepted: 06/06/2023] [Indexed: 06/29/2023] Open
Abstract
Sequential infiltration synthesis (SIS) is an emerging vapor-phase synthetic route for the preparation of organic-inorganic composites. Previously, we investigated the potential of polyaniline (PANI)-InOx composite thin films prepared using SIS for application in electrochemical energy storage. In this study, we investigated the effects of the number of InOx SIS cycles on the chemical and electrochemical properties of PANI-InOx thin films via combined characterization using X-ray photoelectron spectroscopy, ultraviolet-visible spectroscopy, Raman spectroscopy, Fourier transform infrared spectroscopy, and cyclic voltammetry. The area-specific capacitance values of PANI-InOx samples prepared with 10, 20, 50, and 100 SIS cycles were 1.1, 0.8, 1.4, and 0.96 mF/cm², respectively. Our result shows that the formation of an enlarged PANI-InOx mixed region directly exposed to the electrolyte is key to enhancing the pseudocapacitive properties of the composite films.
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Affiliation(s)
- Jiwoong Ham
- Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of Korea
| | - Hyeong-U Kim
- Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 34103, Republic of Korea
| | - Nari Jeon
- Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of Korea
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7
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Huang CH, Weng CY, Chen KH, Chou Y, Wu TL, Chou YC. Multiple-State Nonvolatile Memory Based on Ultrathin Indium Oxide Film via Liquid Metal Printing. ACS Appl Mater Interfaces 2023. [PMID: 37202222 DOI: 10.1021/acsami.3c03002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
In this work, the ultrathin two-dimensional (2D) indium oxide (InOx) with a large area of more than 100 μm2 and a high degree of uniformity was automatically peeled off from indium by the liquid-metal printing technique. Raman and optical measurements revealed that 2D-InOx has a polycrystalline cubic structure. By altering the printing temperature which affects the crystallinity of 2D-InOx, the mechanism of the existence and disappearance of memristive characteristics was established. The tunable characteristics of the 2D-InOx memristor with reproducible one-order switching was manifest from the electrical measurements. Further adjustable multistate characteristics of the 2D-InOx memristor and its resistance switching mechanism were evaluated. A detailed examination of the memristive process demonstrated the Ca2+ mimic dynamic in 2D-InOx memristors as well as the fundamental principles underlying biological and artificial synapses. These surveys allow us to comprehend a 2D-InOx memristor using the liquid-metal printing technique and could be applied to future neuromorphic applications and in the field of revolutionary 2D material exploration.
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Affiliation(s)
- Chang-Hsun Huang
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Chen-Yuan Weng
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Kuan-Hung Chen
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Yi Chou
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Tian-Li Wu
- International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yi-Chia Chou
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
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8
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Jung G, Shin H, Jeon SW, Lim YH, Hong S, Kim DH, Lee JH. Transducer-Aware Hydroxy-Rich-Surface Indium Oxide Gas Sensor for Low-Power and High-Sensitivity NO 2 Gas Sensing. ACS Appl Mater Interfaces 2023; 15:22651-22661. [PMID: 37115020 DOI: 10.1021/acsami.3c00022] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Low-power metal oxide (MOX)-based gas sensors are widely applied in edge devices. To reduce power consumption, nanostructured MOX-based sensors that detect gas at low temperatures have been reported. However, the fabrication process of these sensors is difficult for mass production, and these sensors are lack uniformity and reliability. On the other hand, MOX film-based gas sensors have been commercialized but operate at high temperatures and exhibit low sensitivity. Herein, commercially advantageous highly sensitive, film-based indium oxide sensors operating at low temperatures are reported. Ar and O2 gases are simultaneously injected during the sputtering process to form a hydroxy-rich-surface In2O3 film. Conventional indium oxide (In2O3) films (A0) and hydroxy-rich indium oxide films (A1) are compared using several analytical techniques. A1 exhibits a work function of 4.92 eV, larger than that of A0 (4.42 eV). A1 exhibits a Debye length 3.7 times longer than that of A0. A1 is advantageous for gas sensing when using field effect transistors (FETs) and resistors as transducers. Because of the hydroxy groups present on the surface of A1, A1 can react with NO2 gas at a lower temperature (∼100 °C) than A0 (180 °C). Operando diffuse reflectance infrared Fourier transform spectrometry (DRIFTS) shows that NO2 gas is adsorbed to A1 as nitrite (NO2-) at 100 °C and nitrite and nitrate (NO3-) at 200 °C. After NO2 is adsorbed as nitrate, the sensitivity of the A1 sensor decreases and its low-temperature operability is compromised. On the other hand, when NO2 is adsorbed only as nitrite, the performance of the sensor is maintained. The reliable hydroxy-rich FET-type gas sensor shows the best performance compared to that of the existing film-based NO2 gas sensors, with a 2460% response to 500 ppb NO2 gas at a power consumption of 1.03 mW.
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Affiliation(s)
- Gyuweon Jung
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Hunhee Shin
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Se Won Jeon
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
| | - Yong Hyun Lim
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
| | - Seongbin Hong
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Do Heui Kim
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
| | - Jong-Ho Lee
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
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9
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Lee W, Chen X, Shao Q, Baik SI, Kim S, Seidman D, Bedzyk M, Dravid V, Ketterson JB, Medvedeva J, Chang RPH, Grayson MA. Realizing the Heteromorphic Superlattice: Repeated Heterolayers of Amorphous Insulator and Polycrystalline Semiconductor with Minimal Interface Defects. Adv Mater 2023; 35:e2207927. [PMID: 36906738 DOI: 10.1002/adma.202207927] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Revised: 02/26/2023] [Indexed: 05/12/2023]
Abstract
An unconventional "heteromorphic" superlattice (HSL) is realized, comprised of repeated layers of different materials with differing morphologies: semiconducting pc-In2 O3 layers interleaved with insulating a-MoO3 layers. Originally proposed by Tsu in 1989, yet never fully realized, the high quality of the HSL heterostructure demonstrated here validates the intuition of Tsu, whereby the flexibility of the bond angle in the amorphous phase and the passivation effect of the oxide at interfacial bonds serve to create smooth, high-mobility interfaces. The alternating amorphous layers prevent strain accumulation in the polycrystalline layers while suppressing defect propagation across the HSL. For the HSL with 7:7 nm layer thickness, the observed electron mobility of 71 cm2 Vs-1 , matches that of the highest quality In2 O3 thin films. The atomic structure and electronic properties of crystalline In2 O3 /amorphous MoO3 interfaces are verified using ab-initio molecular dynamics simulations and hybrid functional calculations. This work generalizes the superlattice concept to an entirely new paradigm of morphological combinations.
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Affiliation(s)
- Woongkyu Lee
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Xianyu Chen
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Qing Shao
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Sung-Il Baik
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Sungkyu Kim
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - David Seidman
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Michael Bedzyk
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
- Department of Physics and Astronomy, Northwestern University, Evanston, IL, 60208, USA
| | - Vinayak Dravid
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - John B Ketterson
- Department of Physics and Astronomy, Northwestern University, Evanston, IL, 60208, USA
| | - Julia Medvedeva
- Department of Physics, Missouri University of Science and Technology, Rolla, MO, 65409, USA
| | - Robert P H Chang
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Matthew A Grayson
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, 60208, USA
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10
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Habib A, Khan MS, Zubair M, Hasan IU. Ni-Doped In 2O 3 Nanoparticles and Their Composite with rGO for Efficient Degradation of Organic Pollutants in Wastewater under Visible Light Irradiation. Int J Mol Sci 2023; 24:ijms24097950. [PMID: 37175664 PMCID: PMC10178878 DOI: 10.3390/ijms24097950] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/29/2023] [Revised: 04/15/2023] [Accepted: 04/19/2023] [Indexed: 05/15/2023] Open
Abstract
The efficient degradation of organic effluent is always desirable when using advanced photocatalysts with enhanced activity under visible light. Nickel-doped indium oxide (Ni-In2O3) is synthesized via a hydrothermal route as well as its composites with reduced graphene oxide (rGO). Facile synthesis and composite formation methods lead to a well-defined morphology of fabricated nanocomposite at low temperatures. The bandgap energy of indium oxide lies in the range of 3.00-4.30 eV. Its high light absorption capacity, high stability, and non-toxicity make it a choice as a photocatalyst that is active under visible light. The transition metal Ni-doping changes the indium oxide's chemical, optical, and physicochemical properties. The Ni-In2O3 and rGO composites improved the charge transport and reduced the charge recombination. The phase analysis of the developed photocatalysts was performed using X-ray diffraction (XRD), and the morphological and structural properties were observed using advanced microscopic techniques (SEM and TEM), while UV-vis and FTIR spectroscopic techniques were used to confirm the structure and optical and chemical properties. The electrochemical properties of the photocatalysts were investigated using cyclic voltammetry (CV), linear sweep voltammetry (LSV), and electrochemical impedance spectroscopy (EIS), and the charge-transfer properties of the obtained photocatalysts and the mechanism of the photocatalytic degradation mechanism of methylene blue, a common dye used in the dyeing industry, were determined.
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Affiliation(s)
- Amir Habib
- Department of Physics, College of Science, University of Hafr Al Batin, P.O. Box 1803, Hafr Al Batin 39524, Saudi Arabia
| | - Muhammad Shahzeb Khan
- Department of Mechanical Engineering, College of Engineering, University of Hafr Al Batin, P.O. Box 1803, Hafr Al Batin 39524, Saudi Arabia
| | - Muhammad Zubair
- Department of Physics, College of Science, University of Hafr Al Batin, P.O. Box 1803, Hafr Al Batin 39524, Saudi Arabia
| | - Iftikhar Ul Hasan
- Department of Physics, College of Science, University of Hafr Al Batin, P.O. Box 1803, Hafr Al Batin 39524, Saudi Arabia
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11
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Yu CW, Fu HW, Yang SM, Lin YS, Lu KC. Controlled Synthesis and Enhanced Gas Sensing Performance of Zinc-Doped Indium Oxide Nanowires. Nanomaterials (Basel) 2023; 13:1170. [PMID: 37049264 PMCID: PMC10097380 DOI: 10.3390/nano13071170] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/28/2023] [Revised: 03/21/2023] [Accepted: 03/23/2023] [Indexed: 06/19/2023]
Abstract
Indium oxide (In2O3) is a widely used n-type semiconductor for detection of pollutant gases; however, its gas selectivity and sensitivity have been suboptimal in previous studies. In this work, zinc-doped indium oxide nanowires with appropriate morphologies and high crystallinity were synthesized using chemical vapor deposition (CVD). An accurate method for electrical measurement was attained using a single nanowire microdevice, showing that electrical resistivity increased after doping with zinc. This is attributed to the lower valence of the dopant, which acts as an acceptor, leading to the decrease in electrical conductivity. X-ray photoelectron spectroscopy (XPS) analysis confirms the increased oxygen vacancies due to doping a suitable number of atoms, which altered oxygen adsorption on the nanowires and contributed to improved gas sensing performance. The sensing performance was evaluated using reducing gases, including carbon monoxide, acetone, and ethanol. Overall, the response of the doped nanowires was found to be higher than that of undoped nanowires at a low concentration (5 ppm) and low operating temperatures. At 300 °C, the gas sensing response of zinc-doped In2O3 nanowires was 13 times higher than that of undoped In2O3 nanowires. The study concludes that higher zinc doping concentration in In2O3 nanowires improves gas sensing properties by increasing oxygen vacancies after doping and enhancing gas molecule adsorption. With better response to reducing gases, zinc-doped In2O3 nanowires will be applicable in environmental detection and life science.
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Affiliation(s)
- Che-Wen Yu
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan; (C.-W.Y.); (H.-W.F.); (S.-M.Y.); (Y.-S.L.)
| | - Hsuan-Wei Fu
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan; (C.-W.Y.); (H.-W.F.); (S.-M.Y.); (Y.-S.L.)
| | - Shu-Meng Yang
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan; (C.-W.Y.); (H.-W.F.); (S.-M.Y.); (Y.-S.L.)
| | - Yu-Shan Lin
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan; (C.-W.Y.); (H.-W.F.); (S.-M.Y.); (Y.-S.L.)
| | - Kuo-Chang Lu
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan; (C.-W.Y.); (H.-W.F.); (S.-M.Y.); (Y.-S.L.)
- Core Facility Center, National Cheng Kung University, Tainan 701, Taiwan
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12
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Jia Y, Hsu HS, Huang WC, Lee DW, Lee SW, Chen TY, Zhou L, Wang JH, Wang KW, Dai S. Probing the Roles of Indium Oxides on Copper Catalysts for Enhanced Selectivity during CO 2-to-CO Electrochemical Reduction. Nano Lett 2023; 23:2262-2268. [PMID: 36913488 DOI: 10.1021/acs.nanolett.2c04925] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The electrochemical CO2 reduction reaction (CO2RR) provides an alternative protocol to producing industrial chemicals with renewable electricity sources, and the highly selective, durable, and economic catalysts should expedite CO2RR applications. Here, we demonstrate a composite Cu-In2O3 catalyst in which a trace amount of In2O3 decorated on Cu surface greatly improves the selectivity and stability for CO2-to-CO reduction as compared to the counterparts (Cu or In2O3), realizing a CO faradaic efficiency (FECO) of 95% at -0.7 V (vs RHE) and no obvious degradation within 7 h. In situ X-ray absorption spectroscopy reveals that In2O3 undergoes the redox reaction and preserves the metallic state of Cu during the CO2RR process. Strong electronic interaction and coupling occur at the Cu/In2O3 interface which serves as the active site for selective CO2RR. Theoretical calculation confirms the roles of In2O3 in preventing oxidation and altering the electronic structure of Cu to assist COOH* formation and demote CO* adsorption at the Cu/In2O3 interface.
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Affiliation(s)
- Yanyan Jia
- Key Laboratory for Advanced Materials and Feringa Nobel Prize Scientist Joint Research Center, School of Chemistry & Molecular Engineering, East China University of Science and Technology, Shanghai 200237, P. R. China
| | - Hua-Shan Hsu
- Department of Chemistry, National Taiwan Normal University, Taipei 116, Taiwan
| | - Wan-Chun Huang
- Institute of Materials Science and Engineering, National Central University, Taoyuan 320, Taiwan
| | - Da-Wei Lee
- Institute of Materials Science and Engineering, National Central University, Taoyuan 320, Taiwan
| | - Sheng-Wei Lee
- Institute of Materials Science and Engineering, National Central University, Taoyuan 320, Taiwan
| | - Tsan-Yao Chen
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
- Hierarchical Green-Energy Materials (Hi-GEM) Research Center, National Cheng Kung University, Tainan 70101, Taiwan
| | - Lihui Zhou
- Key Laboratory for Advanced Materials and Feringa Nobel Prize Scientist Joint Research Center, School of Chemistry & Molecular Engineering, East China University of Science and Technology, Shanghai 200237, P. R. China
| | - Jeng-Han Wang
- Department of Chemistry, National Taiwan Normal University, Taipei 116, Taiwan
| | - Kuan-Wen Wang
- Institute of Materials Science and Engineering, National Central University, Taoyuan 320, Taiwan
| | - Sheng Dai
- Key Laboratory for Advanced Materials and Feringa Nobel Prize Scientist Joint Research Center, School of Chemistry & Molecular Engineering, East China University of Science and Technology, Shanghai 200237, P. R. China
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13
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Zhai J, Hu Y, Su M, Shi J, Li H, Qin Y, Gao F, Lu Q. One-Step Phase Separation for Core-Shell Carbon@ Indium Oxide@Bismuth Microspheres with Enhanced Activity for CO 2 Electroreduction to Formate. Small 2023; 19:e2206440. [PMID: 36650934 DOI: 10.1002/smll.202206440] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2022] [Revised: 12/06/2022] [Indexed: 06/17/2023]
Abstract
It is a substantial challenge to construct electrocatalysts with high activity, good selectivity, and long-term stability for electrocatalytic reduction of carbon dioxide to formic acid. Herein, bismuth and indium species are innovatively integrated into a uniform heterogeneous spherical structure by a neoteric quasi-microemulsion method, and a novel C@In2 O3 @Bi50 core-shell structure is constructed through a subsequent one-step phase separation strategy due to melting point difference and Kirkendall effect with the nano-limiting effect of the carbon structure. This core-shell C@In2 O3 @Bi50 catalyst can selectively reduce CO2 to formate with high selectivity (≈90% faradaic efficiency), large partial current density (24.53 mA cm-2 at -1.36 V), and long-term stability (up to 14.5 h), superior to most of the Bi-based catalysts. The hybrid Bi/In2 O3 interfaces of core-shell C@In2 O3 @Bi will stabilize the key intermediate HCOO* and suppress CO poisoning, benefiting the CO2 RR selectivity and stability, while the internal cavity of core-shell structure will improve the reaction kinetics because of the large specific surface area and the enhancement of ion shuttle and electron transfer. Furthermore, the nano-limited domain effect of outmost carbon prevent active components from oxidation and agglomeration, helpful for stabilizing the catalyst. This work offers valuable insights into core-shell structure engineering to promote practical CO2 conversion technology.
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Affiliation(s)
- Jingrong Zhai
- State Key Laboratory of Coordination Chemistry, Coordination Chemistry Institute, Collaborative Innovation Center of Advanced Microstructures, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, P. R. China
| | - Ye Hu
- State Key Laboratory of Coordination Chemistry, Coordination Chemistry Institute, Collaborative Innovation Center of Advanced Microstructures, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, P. R. China
| | - Mengfei Su
- State Key Laboratory of Coordination Chemistry, Coordination Chemistry Institute, Collaborative Innovation Center of Advanced Microstructures, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, P. R. China
| | - Jiangwei Shi
- State Key Laboratory of Coordination Chemistry, Coordination Chemistry Institute, Collaborative Innovation Center of Advanced Microstructures, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, P. R. China
| | - Hang Li
- State Key Laboratory of Coordination Chemistry, Coordination Chemistry Institute, Collaborative Innovation Center of Advanced Microstructures, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, P. R. China
| | - Yezhi Qin
- Department of Materials Science and Engineering, Jiangsu Key Laboratory of Artificial Functional Materials, Collaborative Innovation Center of Advanced Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210023, P. R. China
| | - Feng Gao
- Department of Materials Science and Engineering, Jiangsu Key Laboratory of Artificial Functional Materials, Collaborative Innovation Center of Advanced Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210023, P. R. China
| | - Qingyi Lu
- State Key Laboratory of Coordination Chemistry, Coordination Chemistry Institute, Collaborative Innovation Center of Advanced Microstructures, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, P. R. China
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14
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Ovsianytskyi O, Bekheet MF, Gili A, Gurlo A. Revealing the Chemical State of Palladium in Operating In 2 O 3 Gas Sensors: Metallic Pd Enhances Sensing Response and Intermetallic In x Pd y Compound Blocks It. Chemphyschem 2023; 24:e202200775. [PMID: 36807687 DOI: 10.1002/cphc.202200775] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/17/2022] [Revised: 02/13/2023] [Accepted: 02/13/2023] [Indexed: 02/22/2023]
Abstract
The sensing response of metal oxides activated with noble metal nanoparticles is significantly influenced by changes to the chemical state of corresponding elements under operating conditions. Here, a PdO/rh-In2 O3 consisting of PdO nanoparticles loaded onto rhombohedral In2 O3 was studied as a gas sensor for H2 gas (100-40000 ppm in an oxygen-free atmosphere) in the temperature range of 25-450 °C. The phase composition and chemical state of elements were examined by resistance measurements combined with synchrotron-based in situ X-ray diffraction and ex situ X-ray photoelectron spectroscopy. As found, PdO/rh-In2 O3 undergoes a series of structural and chemical transformations during operation: from PdO to Pd/PdHx and finally to the intermetallic Inx Pdy phase. The maximal sensing response (RN2 /RH2 ) of ∼5 ⋅ 107 towards 40000 ppm (4 vol %) H2 at 70 °C is correlated with the formation of PdH0.706 /Pd. The Inx Pdy intermetallic compounds formed around 250 °C significantly decrease the sensing response.
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Affiliation(s)
- Oleksandr Ovsianytskyi
- Fachgebiet Keramische Werkstoffe / Chair of Advanced Ceramic Materials, Institut für Werkstoffwissenschaften und -technologien, Technische Universität Berlin, Straße des 17. Juni 135, 10623, Berlin, Germany
| | - Maged F Bekheet
- Fachgebiet Keramische Werkstoffe / Chair of Advanced Ceramic Materials, Institut für Werkstoffwissenschaften und -technologien, Technische Universität Berlin, Straße des 17. Juni 135, 10623, Berlin, Germany
| | - Albert Gili
- Fachgebiet Keramische Werkstoffe / Chair of Advanced Ceramic Materials, Institut für Werkstoffwissenschaften und -technologien, Technische Universität Berlin, Straße des 17. Juni 135, 10623, Berlin, Germany.,PVcomB, Helmholtz-Zentrum Berlin für Materialien und Energie, Schwarzschildstr. 3, 12489, Berlin, Germany
| | - Aleksander Gurlo
- Fachgebiet Keramische Werkstoffe / Chair of Advanced Ceramic Materials, Institut für Werkstoffwissenschaften und -technologien, Technische Universität Berlin, Straße des 17. Juni 135, 10623, Berlin, Germany
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15
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Zuo X, Yang Z, Kong J, Han Z, Zhang J, Meng X, Hao S, Wu L, Wu S, Liu J, Wang Z, Wang F. Imbedding Pd Nanoparticles into Porous In 2O 3 Structure for Enhanced Low-Concentration Methane Sensing. Sensors (Basel) 2023; 23:1163. [PMID: 36772203 PMCID: PMC9921143 DOI: 10.3390/s23031163] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/01/2023] [Revised: 01/17/2023] [Accepted: 01/18/2023] [Indexed: 06/18/2023]
Abstract
Methane (CH4), as the main component of natural gas and coal mine gas, is widely used in daily life and industrial processes and its leakage always causes undesirable misadventures. Thus, the rapid detection of low concentration methane is quite necessary. However, due to its robust chemical stability resulting from the strong tetrahedral-symmetry structure, the methane molecules are usually chemically inert to the sensing layers in detectors, making the rapid and efficient alert a big challenge. In this work, palladium nanoparticles (Pd NPs) embedded indium oxide porous hollow tubes (In2O3 PHTs) were successfully synthesized using Pd@MIL-68 (In) MOFs as precursors. All In2O3-based samples derived from Pd@MIL-68 (In) MOFs inherited the morphology of the precursors and exhibited the feature of hexagonal hollow tubes with porous architecture. The gas-sensing performances to 5000 ppm CH4 were evaluated and it was found that Pd@In2O3-2 gave the best response (Ra/Rg = 23.2) at 370 °C, which was 15.5 times higher than that of pristine-In2O3 sensors. In addition, the sensing materials also showed superior selectivity against interfering gases and a rather short response/recovery time of 7 s/5 s. The enhancement in sensing performances of Pd@In2O3-2 could be attributed to the large surface area, rich porosity, abundant oxygen vacancies and the catalytic function of Pd NPs.
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Affiliation(s)
- Xiaoyang Zuo
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials Ministry of Education, Shandong University, Jinan 250061, China
| | - Zhengyi Yang
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials Ministry of Education, Shandong University, Jinan 250061, China
| | - Jing Kong
- China Aerospace Components Engineering Center, China Academy of Space Technology, Beijing 100094, China
| | - Zejun Han
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials Ministry of Education, Shandong University, Jinan 250061, China
| | - Jianxin Zhang
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials Ministry of Education, Shandong University, Jinan 250061, China
| | - Xiangwei Meng
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials Ministry of Education, Shandong University, Jinan 250061, China
| | - Shuyan Hao
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials Ministry of Education, Shandong University, Jinan 250061, China
| | - Lili Wu
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials Ministry of Education, Shandong University, Jinan 250061, China
| | - Simeng Wu
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials Ministry of Education, Shandong University, Jinan 250061, China
| | - Jiurong Liu
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials Ministry of Education, Shandong University, Jinan 250061, China
| | - Zhou Wang
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials Ministry of Education, Shandong University, Jinan 250061, China
| | - Fenglong Wang
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials Ministry of Education, Shandong University, Jinan 250061, China
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16
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Ikim MI, Gerasimov GN, Gromov VF, Ilegbusi OJ, Trakhtenberg LI. Synthesis, Structural and Sensor Properties of Nanosized Mixed Oxides Based on In 2O 3 Particles. Int J Mol Sci 2023; 24:ijms24021570. [PMID: 36675093 PMCID: PMC9863344 DOI: 10.3390/ijms24021570] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2022] [Revised: 01/09/2023] [Accepted: 01/11/2023] [Indexed: 01/14/2023] Open
Abstract
The paper considers the relationship between the structure and properties of nanostructured conductometric sensors based on binary mixtures of semiconductor oxides designed to detect reducing gases in the environment. The sensor effect in such systems is determined by the chemisorption of molecules on the surface of catalytically active particles and the transfer of chemisorbed products to electron-rich nanoparticles, where these products react with the analyzed gas. In this regard, the role is evaluated of the method of synthesizing the composites, the catalytic activity of metal oxides (CeO2, SnO2, ZnO), and the type of conductivity of metal oxides (Co3O4, ZrO2) in the sensor process. The effect of oxygen vacancies present in the composites on the performance characteristics is also considered. Particular attention is paid to the influence of the synthesis procedure for preparing sensitive layers based on CeO2-In2O3 on the structure of the resulting composites, as well as their conductive and sensor properties.
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Affiliation(s)
- Mariya I. Ikim
- N.N. Semenov Federal Research Center for Chemical Physics of RAS, Moscow 119991, Russia
| | - Genrikh N. Gerasimov
- N.N. Semenov Federal Research Center for Chemical Physics of RAS, Moscow 119991, Russia
| | - Vladimir F. Gromov
- N.N. Semenov Federal Research Center for Chemical Physics of RAS, Moscow 119991, Russia
| | - Olusegun J. Ilegbusi
- Biomedical and Process Modeling Lab, University of Central Florida, Orlando, FL 32816, USA
| | - Leonid I. Trakhtenberg
- N.N. Semenov Federal Research Center for Chemical Physics of RAS, Moscow 119991, Russia
- Moscow Institute of Physics and Technology, State University, Dolgoprudny 141701, Russia
- Chemical Faculty, Lomonosov Moscow State University, Moscow 119991, Russia
- Correspondence:
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17
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Chen H, Blatnik MA, Ritterhoff CL, Sokolović I, Mirabella F, Franceschi G, Riva M, Schmid M, Čechal J, Meyer B, Diebold U, Wagner M. Water Structures Reveal Local Hydrophobicity on the In 2O 3(111) Surface. ACS Nano 2022; 16:21163-21173. [PMID: 36449748 PMCID: PMC9798908 DOI: 10.1021/acsnano.2c09115] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/13/2022] [Accepted: 11/17/2022] [Indexed: 06/17/2023]
Abstract
Clean oxide surfaces are generally hydrophilic. Water molecules anchor at undercoordinated surface metal atoms that act as Lewis acid sites, and they are stabilized by H bonds to undercoordinated surface oxygens. The large unit cell of In2O3(111) provides surface atoms in various configurations, which leads to chemical heterogeneity and a local deviation from this general rule. Experiments (TPD, XPS, nc-AFM) agree quantitatively with DFT calculations and show a series of distinct phases. The first three water molecules dissociate at one specific area of the unit cell and desorb above room temperature. The next three adsorb as molecules in the adjacent region. Three more water molecules rearrange this structure and an additional nine pile up above the OH groups. Despite offering undercoordinated In and O sites, the rest of the unit cell is unfavorable for adsorption and remains water-free. The first water layer thus shows ordering into nanoscopic 3D water clusters separated by hydrophobic pockets.
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Affiliation(s)
- Hao Chen
- Institute
of Applied Physics, TU Wien, 1040Vienna, Austria
- State
Key Laboratory of Catalysis, Dalian Institute
of Chemical Physics, Chinese Academy of Sciences, Dalian116023, China
- University
of the Chinese Academy of Sciences, Beijing100049, China
| | - Matthias A. Blatnik
- Institute
of Applied Physics, TU Wien, 1040Vienna, Austria
- Central
European Institute of Technology (CEITEC), Brno University of Technology, 61200Brno, Czech
Republic
| | - Christian L. Ritterhoff
- Interdisciplinary
Center for Molecular Materials (ICMM) and Computer Chemistry Center
(CCC), Friedrich-Alexander-Universität
Erlangen-Nürnberg (FAU), 91052Erlangen, Germany
| | - Igor Sokolović
- Institute
of Applied Physics, TU Wien, 1040Vienna, Austria
| | | | | | - Michele Riva
- Institute
of Applied Physics, TU Wien, 1040Vienna, Austria
| | - Michael Schmid
- Institute
of Applied Physics, TU Wien, 1040Vienna, Austria
| | - Jan Čechal
- Central
European Institute of Technology (CEITEC), Brno University of Technology, 61200Brno, Czech
Republic
| | - Bernd Meyer
- Interdisciplinary
Center for Molecular Materials (ICMM) and Computer Chemistry Center
(CCC), Friedrich-Alexander-Universität
Erlangen-Nürnberg (FAU), 91052Erlangen, Germany
| | - Ulrike Diebold
- Institute
of Applied Physics, TU Wien, 1040Vienna, Austria
| | - Margareta Wagner
- Institute
of Applied Physics, TU Wien, 1040Vienna, Austria
- Central
European Institute of Technology (CEITEC), Brno University of Technology, 61200Brno, Czech
Republic
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18
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Tian Y, Qiao H, Yao T, Gao S, Dai L, Zhao J, Chen Y, Xu P. Highly Sensitive MEMS Sensor Using Bimetallic Pd-Ag Nanoparticles as Catalyst for Acetylene Detection. Sensors (Basel) 2022; 22:7485. [PMID: 36236585 PMCID: PMC9570800 DOI: 10.3390/s22197485] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/23/2022] [Revised: 09/23/2022] [Accepted: 09/28/2022] [Indexed: 06/16/2023]
Abstract
Acetylene detection plays an important role in fault diagnosis of power transformers. However, the available dissolved gas analysis (DGA) techniques have always relied on bulky instruments and are time-consuming. Herein, a high-performance acetylene sensor was fabricated on a microhotplate chip using In2O3 as the sensing material. To achieve high sensing response to acetylene, Pd-Ag core-shell nanoparticles were synthesized and used as catalysts. The transmission electron microscopy (TEM) image clearly shows that the Ag shell is deposited on one face of the cubic Pd nanoseeds. By loading the Pd-Ag bimetallic catalyst onto the surface of In2O3 sensing material, the acetylene sensor has been fabricated for acetylene detection. Due to the high catalytic performance of Pd-Ag bimetallic nanoparticles, the microhotplate sensor has a high response to acetylene gas, with a limit of detection (LOD) of 10 ppb. In addition to high sensitivity, the fabricated microhotplate sensor exhibits satisfactory selectivity, good repeatability, and fast response to acetylene. The high performance of the microhotplate sensor for acetylene gas indicates the application potential of trace acetylene detection in power transformer fault diagnosis.
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Affiliation(s)
- Yuan Tian
- State Grid Hebei Electric Power Co., Ltd., Electric Power Research Institute, Shijiazhuang 050021, China
| | - Hui Qiao
- Equipment Department of State Grid Hebei Electric Power Co., Ltd., Shijiazhuang 050022, China
| | - Tao Yao
- State Grid Hebei Information & Telecommunication Branch, Shijiazhuang 050013, China
| | - Shuguo Gao
- State Grid Hebei Electric Power Co., Ltd., Electric Power Research Institute, Shijiazhuang 050021, China
| | - Lujian Dai
- State Grid Hebei Electric Power Co., Ltd., Electric Power Research Institute, Shijiazhuang 050021, China
| | - Jun Zhao
- State Grid Hebei Electric Power Co., Ltd., Electric Power Research Institute, Shijiazhuang 050021, China
| | - Ying Chen
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Pengcheng Xu
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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19
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Cui M, Shao Z, Qu L, Liu X, Yu H, Wang Y, Zhang Y, Fu Z, Huang Y, Feng W. MOF-Derived In 2O 3 Microrods for High-Performance Photoelectrochemical Ultraviolet Photodetectors. ACS Appl Mater Interfaces 2022; 14:39046-39052. [PMID: 35981319 DOI: 10.1021/acsami.2c09968] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ultraviolet photodetectors (UV PDs) have attracted extensive attention owing to their wide applications, such as optical communication, missile tracking, and fire warning. Wide-bandgap metal-oxide semiconductor materials have become the focus of high-performance UV PD development owing to their unique photoelectric properties and good stability. Compared with other wide-bandgap materials, studies on indium oxide (In2O3)-based photoelectrochemical (PEC) UV PDs are rare. In this work, we explore the photoresponse of In2O3-based PEC UV PDs for the first time. In2O3 microrods (MRs) were synthesized by a hydrothermal method with subsequent annealing. In2O3 MR PEC PDs have good UV photoresponse, showing a high responsivity of 21.19 mA/W and high specific detectivity of 2.03 × 1010 Jones, which surpass most aqueous-type PEC UV PDs. Moreover, In2O3 MR PEC PDs have good multicycle and long-term stability irradiated by 365 nm. Our results prove that In2O3 holds great promise in high-performance PEC UV PDs.
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Affiliation(s)
- MengQi Cui
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Zhitao Shao
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - LiHang Qu
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Xin Liu
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Huan Yu
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Yunxia Wang
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Yunxiao Zhang
- Tianjin Jinhang Technical Physics Institute, Tianjin 300308, China
| | - Zhendong Fu
- Tianjin Jinhang Technical Physics Institute, Tianjin 300308, China
| | - Yuewu Huang
- College of Science, Harbin University of Science and Technology, Harbin 150080, China
| | - Wei Feng
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
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20
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Kataoka T, Magari Y, Makino H, Furuta M. Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InO x:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors. Materials (Basel) 2021; 15:187. [PMID: 35009333 PMCID: PMC8745918 DOI: 10.3390/ma15010187] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/28/2021] [Revised: 12/02/2021] [Accepted: 12/19/2021] [Indexed: 06/14/2023]
Abstract
We successfully demonstrated a transition from a metallic InOx film into a nondegenerate semiconductor InOx:H film. A hydrogen-doped amorphous InOx:H (a-InOx:H) film, which was deposited by sputtering in Ar, O2, and H2 gases, could be converted into a polycrystalline InOx:H (poly-InOx:H) film by low-temperature (250 °C) solid-phase crystallization (SPC). Hall mobility increased from 49.9 cm2V-1s-1 for an a-InOx:H film to 77.2 cm2V-1s-1 for a poly-InOx:H film. Furthermore, the carrier density of a poly-InOx:H film could be reduced by SPC in air to as low as 2.4 × 1017 cm-3, which was below the metal-insulator transition (MIT) threshold. The thin film transistor (TFT) with a metallic poly-InOx channel did not show any switching properties. In contrast, that with a 50 nm thick nondegenerate poly-InOx:H channel could be fully depleted by a gate electric field. For the InOx:H TFTs with a channel carrier density close to the MIT point, maximum and average field effect mobility (μFE) values of 125.7 and 84.7 cm2V-1s-1 were obtained, respectively. We believe that a nondegenerate poly-InOx:H film has great potential for boosting the μFE of oxide TFTs.
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Affiliation(s)
- Taiki Kataoka
- Materials Science and Engineering Course, Kochi University of Technology, Kami 782-8502, Kochi, Japan;
| | - Yusaku Magari
- Graduate School of Natural Science and Technology, Shimane University, Matsue 690-8504, Shimane, Japan;
| | - Hisao Makino
- Center for Nanotechnology, Research Institute, Kochi University of Technology, Kami 782-8502, Kochi, Japan;
- Electronic and Photonic Systems Engineering Course, Kochi University of Technology, Kami 782-8502, Kochi, Japan
| | - Mamoru Furuta
- Materials Science and Engineering Course, Kochi University of Technology, Kami 782-8502, Kochi, Japan;
- Center for Nanotechnology, Research Institute, Kochi University of Technology, Kami 782-8502, Kochi, Japan;
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21
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Duy LT, Kang H, Shin HC, Han S, Singh R, Seo H. Multifunctional Nanohybrid of Alumina and Indium Oxide Prepared Using the Atomic Layer Deposition Technique. ACS Appl Mater Interfaces 2021; 13:59115-59125. [PMID: 34860496 DOI: 10.1021/acsami.1c18623] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Developing new transparent conducting materials, especially those having flexibility, is of great interest for electronic applications. Here, our study on using the ozone-assisted atomic layer deposition (ALD) technique at a low temperature of 200 °C for making an ultrathin, transparent, flexible, and highly electroconducting nanohybrid of indium and aluminum oxides is introduced. Through various characterizations, measurements, and density functional theory-based calculations, excellent electrical conductivity (∼950 S cm-1), transparency (95% in the visible region), and flexibility (bendable angle of 130° for 10 000 cycles) of our nanohybrid oxide thin film with a total layer thickness below 15 nm (2-4 nm for alumina and 10 nm for indium oxide) have been revealed and discussed. Besides, potential sensing applications of our oxide films on a flexible substrate have been demonstrated, such as strain sensors, temperature sensors (25-100 °C, resolution of 0.1 °C), and NO2 gas sensors (0.35-3.5 ppm, optimum operation at 65-75 °C). With the great potential in not only transparent conducting oxide but also sensing applications, our multifunctional nanohybrid prepared using a simple ozone-assisted ALD route opens more room for the applicability of transparent and flexible electronics.
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Affiliation(s)
- Le Thai Duy
- Department of Materials Science and Engineering, Ajou University, Suwon 16499, Republic of Korea
| | - Hyunwoo Kang
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Hee-Cheol Shin
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Seunggik Han
- Department of Materials Science and Engineering, Ajou University, Suwon 16499, Republic of Korea
| | - Ranveer Singh
- Department of Materials Science and Engineering, Ajou University, Suwon 16499, Republic of Korea
| | - Hyungtak Seo
- Department of Materials Science and Engineering, Ajou University, Suwon 16499, Republic of Korea
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
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22
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Liu Z, Tian B, Zhang B, Zhang Z, Liu J, Zhao L, Shi P, Lin Q, Jiang Z. High-Performance Temperature Sensor by Employing Screen Printing Technology. Micromachines (Basel) 2021; 12:mi12080924. [PMID: 34442546 PMCID: PMC8400255 DOI: 10.3390/mi12080924] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/12/2021] [Revised: 07/28/2021] [Accepted: 07/29/2021] [Indexed: 12/27/2022]
Abstract
In the present study, a high-performance n-type temperature sensor was developed by a new and facile synthesis approach, which could apply to ambient temperature applications. As impacted by the low sintering temperature of flexible polyimide substrates, a screen printing technology-based method to prepare thermoelectric materials and a low-temperature heat treatment process applying to polymer substrates were proposed and achieved. By regulating the preparation parameters of the high-performance n-type indium oxide material, the optimal proportioning method and the post-treatment process method were developed. The sensors based on thermoelectric effects exhibited a sensitivity of 162.5 μV/°C, as well as a wide range of temperature measurement from ambient temperature to 223.6 °C. Furthermore, it is expected to conduct temperature monitoring in different scenarios through a sensor prepared in masks and mechanical hands, laying a foundation for the large-scale manufacturing and widespread application of flexible electronic skin and devices.
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23
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Büschges MI, Hoffmann RC, Regoutz A, Schlueter C, Schneider JJ. Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, Their Characterization and Transistor Performance under Illumination. Chemistry 2021; 27:9791-9800. [PMID: 34002896 PMCID: PMC8362207 DOI: 10.1002/chem.202101126] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/31/2021] [Indexed: 11/23/2022]
Abstract
Multilayered heterostructures comprising of In2 O3 , SnO2 , and Al2 O3 were studied for their application in thin-film transistors (TFT). The compositional influence of tin oxide on the properties of the thin-film, as well as on the TFT characteristics is investigated. The heterostructures are fabricated by atomic layer deposition (ALD) at 200 °C, employing trimethylindium (TMI), tetrakis(dimethylamino)tin (TDMASn), trimethylaluminum (TMA), and water as precursors. After post-deposition annealing at 400 °C the thin-films are found to be amorphous, however, they show a discrete layer structure of the individual oxides of uniform film thickness and high optical transparency in the visible region. Incorporation of only two monolayers of Al2 O3 in the active semiconducting layer the formation of oxygen vacancies can be effectively suppressed, resulting in an improved semiconducting and switching behavior. The heterostacks comprising of In2 O3 /SnO2 /Al2 O3 are incorporated into TFT devices, exhibiting a saturation field-effect mobility (μsat ) of 2.0 cm2 ⋅ V-1 s-1 , a threshold-voltage (Vth ) of 8.6 V, a high current on/off ratio (IOn /IOff ) of 1.0×107 , and a subthreshold swing (SS) of 485 mV ⋅ dec-1 . The stability of the TFT under illumination is also altered to a significant extent. A change in the transfer characteristic towards conductive behavior is evident when illuminated with light of an energy of 3.1 eV (400 nm).
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Affiliation(s)
- M. Isabelle Büschges
- Fachbereich ChemieEduard-Zintl-Institut für Anorganische und Physikalische ChemieTechnische Universität DarmstadtAlarich-Weiss-Straße 1264287DarmstadtGermany
| | - Rudolf C. Hoffmann
- Fachbereich ChemieEduard-Zintl-Institut für Anorganische und Physikalische ChemieTechnische Universität DarmstadtAlarich-Weiss-Straße 1264287DarmstadtGermany
| | - Anna Regoutz
- Department of ChemistryUniversity College London20 Gordon StreetWC1H 0AJLondonUK
| | | | - Jörg J. Schneider
- Fachbereich ChemieEduard-Zintl-Institut für Anorganische und Physikalische ChemieTechnische Universität DarmstadtAlarich-Weiss-Straße 1264287DarmstadtGermany
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24
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Cheng P, Wang Y, Wang C, Ma J, Xu L, Lv C, Sun Y. Investigation of doping effects of different noble metals for ethanol gas sensors based on mesoporous In 2O 3. Nanotechnology 2021; 32:305503. [PMID: 33794509 DOI: 10.1088/1361-6528/abf453] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2021] [Accepted: 04/01/2021] [Indexed: 06/12/2023]
Abstract
Elaborating the sensitization effects of different noble metals on In2O3has great significance in providing an optimum method to improve ethanol sensing performance. In this study, long-range ordered mesoporous In2O3has been fabricated through replicating the structure of SBA-15. Different noble metals (Au, Ag, Pt and Pd) with the same doping amount (1 at%) have been introduced by anin situdoping routine. The results of the gas sensing investigation indicate that the gas responses towards ethanol can be obviously increased by doping different noble metals. In particular, the best sensing performance towards ethanol detection can be achieved through Pd doping, and the sensors based on Pd-doped In2O3not only possess the highest response (39.0-100 ppm ethanol) but also have the shortest response and recovery times at the optimal operating temperature of 250 °C. The sensing mechanism of noble metal doped materials can be attributed to the synergetic effect combining 'catalysis' and 'electronic and chemical sensitization' of noble metals. In particular, the chemical state of the noble metal also has a great influence on the gas sensing mechanism. A detailed explanation of the enhancement of gas sensing performance through noble metal doping is presented in the gas sensing mechanism part of the manuscript.
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Affiliation(s)
- Pengfei Cheng
- School of Aerospace Science and Technology, Xidian University, Xi'an 710126, People's Republic of China
| | - Yinglin Wang
- Institute of Complex Systems, Bioelectronics (ICS-8), Forschungszentrum Jülich GmbH, Jülich 52425, Germany
| | - Chen Wang
- School of Aerospace Science and Technology, Xidian University, Xi'an 710126, People's Republic of China
| | - Jian Ma
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
| | - Luping Xu
- School of Aerospace Science and Technology, Xidian University, Xi'an 710126, People's Republic of China
| | - Chao Lv
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
| | - Yanfeng Sun
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
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25
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Zhao MJ, Zhang ZX, Hsu CH, Zhang XY, Wu WY, Lien SY, Zhu WZ. Properties and Mechanism of PEALD-In 2O 3 Thin Films Prepared by Different Precursor Reaction Energy. Nanomaterials (Basel) 2021; 11:nano11040978. [PMID: 33920231 PMCID: PMC8070178 DOI: 10.3390/nano11040978] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/15/2021] [Revised: 04/02/2021] [Accepted: 04/07/2021] [Indexed: 11/16/2022]
Abstract
Indium oxide (In2O3) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In2O3 film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable. In this work, In2O3 film was prepared by ALD using a remote O2 plasma as oxidant, which provides highly reactive oxygen radicals, and hence significantly enhancing the film growth. The substrate temperature that determines the adsorption state on the substrate and reaction energy of the precursor was investigated. At low substrate temperature (100–150 °C), the ratio of chemically adsorbed precursors is low, leading to a low growth rate and amorphous structure of the films. An amorphous-to-crystalline transition was observed at 150–200 °C. An ALD window with self-limiting reaction and a reasonable film growth rate was observed in the intermediate temperature range of 225–275 °C. At high substrate temperature (300–350 °C), the film growth rate further increases due to the decomposition of the precursors. The resulting film exhibits a rough surface which consists of coarse grains and obvious grain boundaries. The growth mode and properties of the In2O3 films prepared by plasma-enhanced ALD can be efficiently tuned by varying the substrate temperature.
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Affiliation(s)
- Ming-Jie Zhao
- School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (M.-J.Z.); (Z.-X.Z.); (C.-H.H.); (X.-Y.Z.); (W.-Z.Z.)
- Fujian Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen 361024, China
| | - Zhi-Xuan Zhang
- School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (M.-J.Z.); (Z.-X.Z.); (C.-H.H.); (X.-Y.Z.); (W.-Z.Z.)
| | - Chia-Hsun Hsu
- School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (M.-J.Z.); (Z.-X.Z.); (C.-H.H.); (X.-Y.Z.); (W.-Z.Z.)
| | - Xiao-Ying Zhang
- School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (M.-J.Z.); (Z.-X.Z.); (C.-H.H.); (X.-Y.Z.); (W.-Z.Z.)
| | - Wan-Yu Wu
- Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan;
| | - Shui-Yang Lien
- School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (M.-J.Z.); (Z.-X.Z.); (C.-H.H.); (X.-Y.Z.); (W.-Z.Z.)
- Fujian Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen 361024, China
- Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan;
- Correspondence:
| | - Wen-Zhang Zhu
- School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China; (M.-J.Z.); (Z.-X.Z.); (C.-H.H.); (X.-Y.Z.); (W.-Z.Z.)
- Fujian Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen 361024, China
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26
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Nguyen NT, Xia M, Duchesne PN, Wang L, Mao C, Jelle AA, Yan T, Li P, Lu ZH, Ozin GA. Enhanced CO 2 Photocatalysis by Indium Oxide Hydroxide Supported on TiN@TiO 2 Nanotubes. Nano Lett 2021; 21:1311-1319. [PMID: 33493396 DOI: 10.1021/acs.nanolett.0c04008] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Herein is developed a ternary heterostructured catalyst, based on a periodic array of 1D TiN nanotubes, with a TiO2 nanoparticulate intermediate layer and a In2O3-x(OH)y nanoparticulate shell for improved performance in the photocatalytic reverse water gas shift reaction. It is demonstrated that the ordering of the three components in the heterostructure sensitively determine its activity in CO2 photocatalysis. Specifically, TiN nanotubes not only provide a photothermal driving force for the photocatalytic reaction, owing to their strong optical absorption properties, but they also serve as a crucial scaffold for minimizing the required quantity of In2O3-x(OH)y nanoparticles, leading to an enhanced CO production rate. Simultaneously, the TiO2 nanoparticle layer supplies photogenerated electrons and holes that are transferred to active sites on In2O3-x(OH)y nanoparticles and participate in the reactions occurring at the catalyst surface.
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Affiliation(s)
- Nhat Truong Nguyen
- Solar Fuels Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6, Canada
| | - Meikun Xia
- Solar Fuels Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6, Canada
| | - Paul N Duchesne
- Solar Fuels Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6, Canada
| | - Lu Wang
- Solar Fuels Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6, Canada
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong 518172, P.R. China
| | - Chengliang Mao
- Solar Fuels Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6, Canada
- Key Laboratory of Pesticide and Chemical Biology of Ministry of Education, Institute of Environmental and Applied Chemistry, College of Chemistry, Central China Normal University, Wuhan 430079, P.R. China
| | - Abdinoor A Jelle
- Solar Fuels Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6, Canada
| | - Tingjiang Yan
- The Key Laboratory of Life-Organic Analysis, College of Chemistry and Chemical Engineering, Qufu Normal University, Qufu, Shandong 273165, P.R. China
| | - Peicheng Li
- Department of Materials Science and Engineering, University of Toronto, 184 College Street, Suite 140, Toronto, Ontario M5S 3E4, Canada
| | - Zheng-Hong Lu
- Department of Materials Science and Engineering, University of Toronto, 184 College Street, Suite 140, Toronto, Ontario M5S 3E4, Canada
| | - Geoffrey A Ozin
- Solar Fuels Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6, Canada
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27
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Swallow JEN, Palgrave RG, Murgatroyd PAE, Regoutz A, Lorenz M, Hassa A, Grundmann M, von Wenckstern H, Varley JB, Veal TD. Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors. ACS Appl Mater Interfaces 2021; 13:2807-2819. [PMID: 33426870 DOI: 10.1021/acsami.0c16021] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The electronic and optical properties of (InxGa1-x)2O3 alloys are highly tunable, giving rise to a myriad of applications including transparent conductors, transparent electronics, and solar-blind ultraviolet photodetectors. Here, we investigate these properties for a high quality pulsed laser deposited film which possesses a lateral cation composition gradient (0.01 ≤ x ≤ 0.82) and three crystallographic phases (monoclinic, hexagonal, and bixbyite). The optical gaps over this composition range are determined, and only a weak optical gap bowing is found (b = 0.36 eV). The valence band edge evolution along with the change in the fundamental band gap over the composition gradient enables the surface space-charge properties to be probed. This is an important property when considering metal contact formation and heterojunctions for devices. A transition from surface electron accumulation to depletion occurs at x ∼ 0.35 as the film goes from the bixbyite In2O3 phase to the monoclinic β-Ga2O3 phase. The electronic structure of the different phases is investigated by using density functional theory calculations and compared to the valence band X-ray photoemission spectra. Finally, the properties of these alloys, such as the n-type dopability of In2O3 and use of Ga2O3 as a solar-blind UV detector, are understood with respect to other common-cation compound semiconductors in terms of simple chemical trends of the band edge positions and the hydrostatic volume deformation potential.
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Affiliation(s)
- Jack E N Swallow
- Stephenson Institute for Renewable Energy and Department of Physics, University of Liverpool, Liverpool L69 7ZF, U.K
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, U.K
| | - Robert G Palgrave
- Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K
| | - Philip A E Murgatroyd
- Stephenson Institute for Renewable Energy and Department of Physics, University of Liverpool, Liverpool L69 7ZF, U.K
| | - Anna Regoutz
- Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K
| | - Michael Lorenz
- Felix Bloch Institute for Solid State Physics, Universität Leipzig, Leipzig, Germany
| | - Anna Hassa
- Felix Bloch Institute for Solid State Physics, Universität Leipzig, Leipzig, Germany
| | - Marius Grundmann
- Felix Bloch Institute for Solid State Physics, Universität Leipzig, Leipzig, Germany
| | - Holger von Wenckstern
- Felix Bloch Institute for Solid State Physics, Universität Leipzig, Leipzig, Germany
| | - Joel B Varley
- Lawrence Livermore National Laboratory, Livermore, California 94550, United States
| | - Tim D Veal
- Stephenson Institute for Renewable Energy and Department of Physics, University of Liverpool, Liverpool L69 7ZF, U.K
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28
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Abstract
In this work, we demonstrate enhancement-mode field-effect transistors by an atomic-layer-deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is found to be critical on the materials and electron transport of In2O3. Controllable thickness of In2O3 at atomic scale enables the design of sufficient 2D carrier density in the In2O3 channel integrated with the conventional dielectric. The threshold voltage and channel carrier density are found to be considerably tuned by channel thickness. Such a phenomenon is understood by the trap neutral level (TNL) model, where the Fermi-level tends to align deeply inside the conduction band of In2O3 and can be modulated to the bandgap in atomic layer thin In2O3 due to the quantum confinement effect, which is confirmed by density function theory (DFT) calculation. The demonstration of enhancement-mode amorphous In2O3 transistors suggests In2O3 is a competitive channel material for back-end-of-line (BEOL) compatible transistors and monolithic 3D integration applications.
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Affiliation(s)
- Mengwei Si
- School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Yaoqiao Hu
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Zehao Lin
- School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Xing Sun
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Adam Charnas
- School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Dongqi Zheng
- School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Xiao Lyu
- School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Haiyan Wang
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Kyeongjae Cho
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Peide D Ye
- School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
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29
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Nguyen NT, Yan T, Wang L, Loh JYY, Duchesne PN, Mao C, Li PC, Jelle AA, Xia M, Ghoussoub M, Kherani NP, Lu ZH, Ozin GA. Plasmonic Titanium Nitride Facilitates Indium Oxide CO 2 Photocatalysis. Small 2020; 16:e2005754. [PMID: 33201581 DOI: 10.1002/smll.202005754] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2020] [Revised: 10/18/2020] [Indexed: 06/11/2023]
Abstract
Nanoscale titanium nitride TiN is a metallic material that can effectively harvest sunlight over a broad spectral range and produce high local temperatures via the photothermal effect. Nanoscale indium oxide-hydroxide, In2 O3- x (OH)y , is a semiconducting material capable of photocatalyzing the hydrogenation of gaseous CO2 ; however, its wide electronic bandgap limits its absorption of photons to the ultraviolet region of the solar spectrum. Herein, the benefits of both nanomaterials in a ternary heterostructure: TiN@TiO2 @In2 O3- x (OH)y are combined. This heterostructured material synergistically couples the metallic TiN and semiconducting In2 O3- x (OH)y phases via an interfacial semiconducting TiO2 layer, allowing it to drive the light-assisted reverse water gas shift reaction at a conversion rate greatly surpassing that of its individual components or any binary combinations thereof.
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Affiliation(s)
- Nhat Truong Nguyen
- Solar Fuels Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, ON, M5S 3H6, Canada
| | - Tingjiang Yan
- Solar Fuels Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, ON, M5S 3H6, Canada
- The Key Laboratory of Life-Organic Analysis, College of Chemistry and Chemical Engineering, Qufu Normal University, Qufu, Shandong, 273165, P. R. China
| | - Lu Wang
- Solar Fuels Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, ON, M5S 3H6, Canada
| | - Joel Yi Yang Loh
- Department of Materials Science and Engineering, University of Toronto, 184 College Street, Suite 140, Toronto, ON, M5S 3E4, Canada
| | - Paul N Duchesne
- Solar Fuels Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, ON, M5S 3H6, Canada
| | - Chengliang Mao
- Solar Fuels Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, ON, M5S 3H6, Canada
- Key Laboratory of Pesticide and Chemical Biology of Ministry of Education, Institute of Environmental & Applied Chemistry, College of Chemistry, Central China Normal University, Wuhan, 430079, P. R. China
| | - Pei-Cheng Li
- Department of Materials Science and Engineering, University of Toronto, 184 College Street, Suite 140, Toronto, ON, M5S 3E4, Canada
| | - Abdinoor A Jelle
- Solar Fuels Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, ON, M5S 3H6, Canada
| | - Meikun Xia
- Solar Fuels Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, ON, M5S 3H6, Canada
| | - Mireille Ghoussoub
- Solar Fuels Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, ON, M5S 3H6, Canada
| | - Nazir P Kherani
- Department of Materials Science and Engineering, University of Toronto, 184 College Street, Suite 140, Toronto, ON, M5S 3E4, Canada
| | - Zheng-Hong Lu
- Department of Materials Science and Engineering, University of Toronto, 184 College Street, Suite 140, Toronto, ON, M5S 3E4, Canada
| | - Geoffrey A Ozin
- Solar Fuels Group, Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, ON, M5S 3H6, Canada
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He X, Waldman RZ, Mandia DJ, Jeon N, Zaluzec NJ, Borkiewicz OJ, Ruett U, Darling SB, Martinson ABF, Tiede DM. Resolving the Atomic Structure of Sequential Infiltration Synthesis Derived Inorganic Clusters. ACS Nano 2020; 14:14846-14860. [PMID: 33170644 DOI: 10.1021/acsnano.0c03848] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Sequential infiltration synthesis (SIS) is a route to the precision deposition of inorganic solids in analogy to atomic layer deposition but occurs within (vs upon) a soft material template. SIS has enabled exquisite nanoscale morphological complexity in various oxides through selective nucleation in block copolymers templates. However, the earliest stages of SIS growth remain unresolved, including the atomic structure of nuclei and the evolution of local coordination environments, before and after polymer template removal. We employed In K-edge extended X-ray absorption fine structure and atomic pair distribution function analysis of high-energy X-ray scattering to unravel (1) the structural evolution of InOxHy clusters inside a poly(methyl methacrylate) (PMMA) host matrix and (2) the formation of porous In2O3 solids (obtained after annealing) as a function of SIS cycle number. Early SIS cycles result in InOxHy cluster growth with high aspect ratio, followed by the formation of a three-dimensional network with additional SIS cycles. That the atomic structures of the InOxHy clusters can be modeled as multinuclear clusters with bonding patterns related to those in In2O3 and In(OH)3 crystal structures suggests that SIS may be an efficient route to 3D arrays of discrete-atom-number clusters. Annealing the mixed inorganic/polymer films in air removes the PMMA template and consolidates the as-grown clusters into cubic In2O3 nanocrystals with structural details that also depend on SIS cycle number.
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Affiliation(s)
| | - Ruben Z Waldman
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | | | | | | | | | | | - Seth B Darling
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
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Luo M, Zhu M, Wei M, Shao S, Robin M, Wei C, Cui Z, Zhao J, Zhang Z. Radiation-Hard and Repairable Complementary Metal-Oxide-Semiconductor Circuits Integrating n-type Indium Oxide and p-type Carbon Nanotube Field-Effect Transistors. ACS Appl Mater Interfaces 2020; 12:49963-49970. [PMID: 33095560 DOI: 10.1021/acsami.0c12539] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Special radiation-hard and ultralow-power complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) are used in the fields of deep space, nuclear energy, and medical X-ray imaging. In this work, we first constructed radiation-hard, repairable, and sub-1 V-driven printed hybrid CMOS field-effect transistors (FETs) and ICs, which integrate printed carbon nanotube (CNT) (band gap ∼ 0.65 eV) p-type FETs and indium oxide (In2O3) (band gap ∼3.64 eV) n-type FETs on glass substrates using a printed PS-PMMA/[EMIM][TFSI] mixture as the gate dielectric layer. The PS-PMMA/[EMIM][TFSI] mixture gate dielectric layer not only lowered the supply voltage (VDD) by providing ultrahigh gate efficiency but also improved the anti-irradiation ability of the hybrid CMOS FETs and ICs. Specifically, the hybrid CMOS inverters exhibited rail-to-rail output with a high voltage gain and high noise margins at a low VDD that could be scaled down to 0.4 V. Furthermore, the hybrid CMOS FETs and ICs showed excellent radiation hardness, that is, withstanding a 3 Mrad (Si) total irradiation dose (TID) at a dose rate of 560 rad s-1 (Si), which is an exceptional result for CMOS transistors and ICs. Furthermore, the radiation-damaged CMOS FETs could be fully recovered by removing and reprinting the PS-PMMA/[EMIM][TFSI] mixture gate dielectric layer, indicating the ability to repair irradiation damage. This work provides an in-space IC fabrication technology.
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Affiliation(s)
- Manman Luo
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou 215123, P. R. China
- International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, P. R. China
| | - Maguang Zhu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Centre for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, P. R. China
| | - Miaomiao Wei
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou 215123, P. R. China
| | - Shuangshuang Shao
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou 215123, P. R. China
| | - Malo Robin
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou 215123, P. R. China
| | - Changting Wei
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou 215123, P. R. China
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, P. R. China
| | - Zheng Cui
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou 215123, P. R. China
| | - Jianwen Zhao
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou 215123, P. R. China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Centre for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, P. R. China
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Chen YY, Yang SM, Lu KC. Synthesis of High-Density Indium Oxide Nanowires with Low Electrical Resistivity. Nanomaterials (Basel) 2020; 10:E2100. [PMID: 33113939 PMCID: PMC7690706 DOI: 10.3390/nano10112100] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/03/2020] [Revised: 10/16/2020] [Accepted: 10/21/2020] [Indexed: 11/16/2022]
Abstract
In this study, indium oxide nanowires of high-density were synthesized by chemical vapor deposition (CVD) through a vapor-liquid-solid (VLS) mechanism without carrier gas. The indium oxide nanowires possess great morphology with an aspect ratio of over 400 and an average diameter of 50 nm; the length of the nanowires could be over 30 μm, confirmed by field-emission scanning electron microscopy (SEM). Characterization was conducted with X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence spectrum (PL). High-resolution TEM studies confirm that the grown nanowires were single crystalline c-In2O3 nanowires of body-centered cubic structures. The room temperature PL spectrum shows a strong peak around 2.22 eV, originating from the defects in the crystal structure. The electrical resistivity of a single indium oxide nanowire was measured to be 1.0 × 10-4 Ω⋅cm, relatively low as compared with previous works, which may result from the abundant oxygen vacancies in the nanowires, acting as unintentional doping.
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Affiliation(s)
- Yu-Yang Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan; (Y.-Y.C.); (S.-M.Y.)
| | - Shu-Meng Yang
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan; (Y.-Y.C.); (S.-M.Y.)
| | - Kuo-Chang Lu
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan; (Y.-Y.C.); (S.-M.Y.)
- Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan
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Nasriddinov A, Rumyantseva M, Konstantinova E, Marikutsa A, Tokarev S, Yaltseva P, Fedorova O, Gaskov A. Effect of Humidity on Light-Activated NO and NO 2 Gas Sensing by Hybrid Materials. Nanomaterials (Basel) 2020; 10:nano10050915. [PMID: 32397437 PMCID: PMC7279420 DOI: 10.3390/nano10050915] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/01/2020] [Revised: 04/27/2020] [Accepted: 04/30/2020] [Indexed: 01/25/2023]
Abstract
Air humidity is one of the main factors affecting the characteristics of semiconductor gas sensors, especially at low measurement temperatures. In this work we analyzed the influence of relative humidity on sensor properties of the hybrid materials based on the nanocrystalline SnO2 and In2O3 and Ru (II) heterocyclic complex and verified the possibility of using such materials for NO (0.25–4.0 ppm) and NO2 (0.05–1.0 ppm) detection in high humidity conditions (relative humidity (RH) = 20%, 40%, 65%, 90%) at room temperature during periodic blue (λmax = 470 nm) illumination. To reveal the reasons for the different influence of humidity on the sensors’ sensitivity when detecting NO and NO2, electron paramagnetic resonance (EPR) spectroscopy and diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) investigations were undertaken. It was established that the substitution of adsorbed oxygen by water molecules causes the decrease in sensor response to NO in humid air. The influence of humidity on the interaction of sensitive materials with NO2 is determined by the following factors: the increase in charge carrier’s concentration, the decrease in the number of active sites capable of interacting with gases, and possible substitution of chemisorbed oxygen with NO2− groups.
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Affiliation(s)
- Abulkosim Nasriddinov
- Chemistry Department, Moscow State University, 119991 Moscow, Russia; (A.N.); (A.M.); (S.T.); (P.Y.); (O.F.); (A.G.)
- Faculty of Materials Science, Moscow State University, 119991 Moscow, Russia
| | - Marina Rumyantseva
- Chemistry Department, Moscow State University, 119991 Moscow, Russia; (A.N.); (A.M.); (S.T.); (P.Y.); (O.F.); (A.G.)
- Correspondence: ; Tel.: +7-495-939-5471
| | - Elizaveta Konstantinova
- Physics Department, Moscow State University, 119991 Moscow, Russia;
- Faculty of nano-, bio-, information and cognitive technologies, Moscow Institute of Physics and Technology, Dolgoprudny, 141700 Moscow Region, Russia
- National Research Center “Kurchatov Institute”, 123182 Moscow, Russia
| | - Artem Marikutsa
- Chemistry Department, Moscow State University, 119991 Moscow, Russia; (A.N.); (A.M.); (S.T.); (P.Y.); (O.F.); (A.G.)
| | - Sergey Tokarev
- Chemistry Department, Moscow State University, 119991 Moscow, Russia; (A.N.); (A.M.); (S.T.); (P.Y.); (O.F.); (A.G.)
- A.N. Nesmeyanov Institute of Organoelement Compounds RAS, 119991 Moscow, Russia
| | - Polina Yaltseva
- Chemistry Department, Moscow State University, 119991 Moscow, Russia; (A.N.); (A.M.); (S.T.); (P.Y.); (O.F.); (A.G.)
| | - Olga Fedorova
- Chemistry Department, Moscow State University, 119991 Moscow, Russia; (A.N.); (A.M.); (S.T.); (P.Y.); (O.F.); (A.G.)
- A.N. Nesmeyanov Institute of Organoelement Compounds RAS, 119991 Moscow, Russia
| | - Alexander Gaskov
- Chemistry Department, Moscow State University, 119991 Moscow, Russia; (A.N.); (A.M.); (S.T.); (P.Y.); (O.F.); (A.G.)
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Kim MG, Jeong J, Choi Y, Park J, Park E, Cheon CH, Kim NK, Min BK, Kim W. Synthesis of V-doped In 2O 3 Nanocrystals via Digestive-Ripening Process and Their Electrocatalytic Properties in CO 2 Reduction Reaction. ACS Appl Mater Interfaces 2020; 12:11890-11897. [PMID: 31967458 DOI: 10.1021/acsami.9b19584] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The development of synthetic methods for monodisperse nanomaterial is of great importance in science and technology related to nanomaterials. The strong demands to prepare exceptionally monodisperse nanocrystals have made digestive-ripening one of the most sought-after size-focusing processes. Although digestive-ripening processes have been demonstrated to produce various metals and semiconductors, their applicability to oxides has rarely been studied despite various unique properties and applications of oxide nanomaterials. In this work, we demonstrate the successful synthesis of monodisperse V-doped In2O3 nanocrystals via a modified digestive-ripening process. The nanocrystals have truncated octahedral shape faceted with eight (222) and six (220) planes. To the best of our knowledge, this is the first report on the digestive-ripening synthesis of highly symmetrical doped oxide nanocrystals. Moreover, V-doped In2O3 nanocrystals exhibit electrocatalytic activities for CO2 electrochemical reduction and produce CH3OH, which has not been attainable from previously reported electrocatalysts based on indium or indium oxide. This distinctive catalytic property of V-doped In2O3 is attributed to the presence of V-dopants in the In2O3 host. Our demonstration has important implications for both nanocrystal synthesis and electrocatalyst development.
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Affiliation(s)
- Myeong-Geun Kim
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Jinhoo Jeong
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Youngjo Choi
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Jinwoo Park
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Eunjoon Park
- Department of Chemistry, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Cheol-Hong Cheon
- Department of Chemistry, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Nak-Kyoon Kim
- Advanced Analysis Center, Korea Institute of Science and Technology, 5 Hwarang-ro 14-gil, Seongbuk-gu, Seoul 02792, Republic of Korea
| | - Byoung Koun Min
- Clean Energy Research Center, Korea Institute of Science and Technology, 5 Hwarang-ro 14-gil, Seongbuk-gu, Seoul 02792, Republic of Korea
- Green School, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Woong Kim
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
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Jovic V, Moser S, Papadogianni A, Koch RJ, Rossi A, Jozwiak C, Bostwick A, Rotenberg E, Kennedy JV, Bierwagen O, Smith KE. The Itinerant 2D Electron Gas of the Indium Oxide (111) Surface: Implications for Carbon- and Energy-Conversion Applications. Small 2020; 16:e1903321. [PMID: 31489781 DOI: 10.1002/smll.201903321] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2019] [Revised: 08/09/2019] [Indexed: 06/10/2023]
Abstract
Transparent conducting oxides (TCO) have integral and emerging roles in photovoltaic, thermoelectric energy conversion, and more recently, photocatalytic systems. The functional properties of TCOs, and thus their role in these applications, are often mediated by the bulk electronic band structure but are also strongly influenced by the electronic structure of the native surface 2D electron gas (2DEG), particularly under operating conditions. This study investigates the 2DEG, and its response to changes in chemistry, at the (111) surface of the model TCO In2 O3 , through angle resolved and core level X-ray photoemission spectroscopy. It is found that the itinerant charge carriers of the 2DEG reside in two quantum well subbands penetrating up to 65 Å below the surface. The charge carrier concentration of this 2DEG, and thus the high surface n-type conductivity, emerges from donor-type oxygen vacancies of surface character and proves to be remarkably robust against surface absorbents and contamination. The optical transparency, however, may rely on the presence of ubiquitous surface adsorbed oxygen groups and hydrogen defect states that passivate localized oxygen vacancy states in the bandgap of In2 O3 .
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Affiliation(s)
- Vedran Jovic
- National Isotope Center, GNS Science, MacDiarmid Institute for Advanced Materials and Nanotechnology, Lower Hutt, Wellington, 5010, New Zealand
- School of Chemical Sciences, The University of Auckland, Auckland, 1010, New Zealand
| | - Simon Moser
- Physikalisches Institut, Universität Würzburg, Würzburg, D-97074, Germany
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Alexandra Papadogianni
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, Berlin, 10117, Germany
| | - Roland J Koch
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Antonio Rossi
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Physics, University of California, Davis, CA, 95616, USA
| | - Chris Jozwiak
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Aaron Bostwick
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Eli Rotenberg
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - John V Kennedy
- National Isotope Center, GNS Science, MacDiarmid Institute for Advanced Materials and Nanotechnology, Lower Hutt, Wellington, 5010, New Zealand
| | - Oliver Bierwagen
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, Berlin, 10117, Germany
| | - Kevin E Smith
- Department of Physics, Boston University, Boston, MA, 02215, USA
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Han G, Wang X, Yao J, Zhang M, Wang J. The Application of Indium Oxide@CPM-5-C-600 Composite Material Derived from MOF in Cathode Material of Lithium Sulfur Batteries. Nanomaterials (Basel) 2020; 10:E177. [PMID: 31968547 DOI: 10.3390/nano10010177] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/07/2019] [Revised: 01/05/2020] [Accepted: 01/09/2020] [Indexed: 11/17/2022]
Abstract
Due to the “shuttle effect”, the cycle performance of lithium sulfur (Li-S) battery is poor and the capacity decays rapidly. Replacing lithium-ion battery is the maximum problem to be overcome. In order to solve this problem, we use a cage like microporous MOF(CPM-5) as a carbon source, which is carbonized at high temperature to get a micro-mesoporous carbon composite material. In addition, indium oxide particles formed during carbonization are deposited on CPM-5 structure, forming a simple core-shell structure CPM-5-C-600. When it is used as the cathode of Li-S battery, the small molecule sulfide can be confined in the micropores, while the existence of large pore size mesopores can provide a channel for the transmission of lithium ions, so as to improve the conductivity of the material and the rate performance of the battery. After 100 cycles, the specific capacity of the battery can be still maintained at 650 mA h·g−1 and the Coulombic efficiency is close to 100%. When the rate goes up to 2 C, the first discharge capacity not only can reach 1400 mA h·g−1, but also still provides 500 mA h·g−1 after 200 cycles, showing excellent rate performance.
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37
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Loh JYY, Ye Y, Kherani NP. Synergistic Coupling of Photo and Thermal Conditions for Enhancing CO 2 Reduction Rates in the Reverse Water Gas Shift Reaction. ACS Appl Mater Interfaces 2020; 12:2234-2242. [PMID: 31846296 DOI: 10.1021/acsami.9b14097] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The photocatalytic activity of nanostructured In2O3-x(OH)y for the reverse water gas shift (RWGS) reaction CO2 + H2 → CO + H2O can be greatly enhanced by substitution of Bi(III) for In(III) in the lattice of BizIn2-zO3-x(OH)y. This behavior was hypothesized as the effect of the population and location of Bi(III) on the Lewis acidity and Lewis basicity of proximal hydroxide and coordinately unsaturated metal surface sites in BizIn2-zO3-x(OH)y acting synergistically as a frustrated Lewis acid-base pair reaction. Nonetheless, such photocatalytic activity is usually optimized in a specific batch reactor setup sequence, with H2 as an initial gas input under photo and thermal conditions before introducing CO2. Hence, the chemical interplay between environment parameters such as photoillumination, thermal input, and gas reactant components with the effects of Bi substitution is unclear. Reported herein, glovebox-protected X-ray photoelectron spectroscopy (XPS) interrogates this photochemical RWGS reaction transiting from vacuum state to similar conditions in a photocatalytic reactor, under dark and ambient temperatures, 150°C in dark and 150 °C under photoillumination. Binding energy shifts were used to correlate the material system's Lewis basicity response to these acidic probe gases. In-situ gas electronic sensitivity and in-situ UV-vis-derived band-gap trends confirm the trends shown in the XPS results, hence showing its equivalency with in situ methods. The enhanced photocatalytic reduction rate of CO2 with H2 with a low doped 0.05% a.t Bi system is thus associated with an increased gas sensitivity in H2 + CO2, a greater expansion in the OH shoulder than that of the undoped system under heat and light conditions, as well as a greater thermal stability of dissociated H adatoms. The photoinduced expansion of the OH shoulder and the increased positive binding energy shifts show the important role of photoillumination over that of thermal conditions. The poor catalytic performance of the high doped system can be attributed to a competing H2 reduction of In3+. The results provide new insight into how pairing photo and thermal conditions with the methodical tuning of the Lewis acidity and Lewis basicity of surface frustrated Lewis acid-base pair sites by varying z amount in BizIn2-zO3-x(OH)y enables optimization of the rate of the photochemical RWGS.
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Affiliation(s)
- Joel Y Y Loh
- Electrical and Computing Engineering , University of Toronto , Toronto , Ontario M5S 3G4 , Canada
| | - Yufeng Ye
- Research Laboratory of Electronics , Massachusetts Institute of Technology , 50 Vassar St , Cambridge , Massachusetts 02142 , United States
| | - Nazir P Kherani
- Electrical and Computing Engineering , University of Toronto , Toronto , Ontario M5S 3G4 , Canada
- Material Science and Engineering , University of Toronto , Toronto , Ontario M5S 3E4 , Canada
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38
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Zhu Y, Liu G, Xin Z, Fu C, Wan Q, Shan F. Solution-Processed, Electrolyte-Gated In 2O 3 Flexible Synaptic Transistors for Brain-Inspired Neuromorphic Applications. ACS Appl Mater Interfaces 2020; 12:1061-1068. [PMID: 31820620 DOI: 10.1021/acsami.9b18605] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Emulating the essential synaptic behaviors using single synaptic transistor has attracted extensive attention for building the brain-inspired neuromorphic systems. However, few reports on synaptic transistors fabricated by solution processes have been reported. In this article, the indium oxide synaptic transistors based on polyimide substrates were fabricated by a nontoxic water-inducement method at a low temperature, and lithium perchlorate (LiClO4) was dissolved in polyethylene oxide as the gate electrolyte. For water-inducement process, comparable electrical properties of the synaptic transistors can be achieved by prolonging the annealing time rather than high-temperature annealing with a relatively short time. The effect of the annealing time on the electrical performance of the electrolyte-gated transistors annealed at various temperatures was investigated. It is found that the electrolyte-gated-synaptic transistor on polyimide substrate annealed at 200 °C exhibits high electrical performance and good mechanical stability. Due to the ion migration relaxation dynamics in the polymer electrolyte, various important synaptic behaviors such as the excitatory postsynaptic current, paired-pulse facilitation, high-pass filtering characteristics, and long-term memory performance were successfully mimicked. The electrolyte-gated synaptic transistors based on solution-processed In2O3 exhibit great potential in neuromorphological applications.
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Affiliation(s)
| | | | - Zhijie Xin
- Collaborative Innovation Center for Eco-Textiles of Shandong Province , Qingdao 266071 , China
| | - Chuanyu Fu
- Collaborative Innovation Center for Eco-Textiles of Shandong Province , Qingdao 266071 , China
| | - Qing Wan
- College of Electronic Science & Engineering , Nanjing University , Nanjing 210093 , China
| | - Fukai Shan
- Collaborative Innovation Center for Eco-Textiles of Shandong Province , Qingdao 266071 , China
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Nasriddinov A, Rumyantseva M, Shatalova T, Tokarev S, Yaltseva P, Fedorova O, Khmelevsky N, Gaskov A. Organic-Inorganic Hybrid Materials for Room Temperature Light-Activated Sub-ppm NO Detection. Nanomaterials (Basel) 2019; 10:E70. [PMID: 31905665 PMCID: PMC7023258 DOI: 10.3390/nano10010070] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/23/2019] [Revised: 12/16/2019] [Accepted: 12/24/2019] [Indexed: 11/30/2022]
Abstract
Nitric oxide (NO) is one of the main environmental pollutants and one of the biomarkers noninvasive diagnosis of respiratory diseases. Organic-inorganic hybrids based on heterocyclic Ru (II) complex and nanocrystalline semiconductor oxides SnO2 and In2O3 were studied as sensitive materials for NO detection at room temperature under periodic blue light (λmax = 470 nm) illumination. The semiconductor matrixes were obtained by chemical precipitation with subsequent thermal annealing and characterized by XRD, Raman spectroscopy, and single-point BET methods. The heterocyclic Ru (II) complex was synthesized for the first time and characterized by 1H NMR, 13C NMR, MALDI-TOF mass spectrometry and elemental analysis. The HOMO and LUMO energies of the Ru (II) complex are calculated from cyclic voltammetry data. The thermal stability of hybrids was investigated by thermogravimetric analysis (TGA)-MS analysis. The optical properties of Ru (II) complex, nanocrystalline oxides and hybrids were studied by UV-Vis spectroscopy in transmission and diffuse reflectance modes. DRIFT spectroscopy was performed to investigate the interaction between NO and the surface of the synthesized materials. Sensor measurements demonstrate that hybrid materials are able to detect NO at room temperature in the concentration range of 0.25-4.0 ppm with the detection limit of 69-88 ppb.
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Affiliation(s)
- Abulkosim Nasriddinov
- Chemistry Department, Moscow State University, Moscow 119991, Russia; (A.N.); (T.S.); (S.T.); (P.Y.); (O.F.); (A.G.)
- Faculty of Materials Science, Moscow State University, Moscow 119991, Russia
| | - Marina Rumyantseva
- Chemistry Department, Moscow State University, Moscow 119991, Russia; (A.N.); (T.S.); (S.T.); (P.Y.); (O.F.); (A.G.)
| | - Tatyana Shatalova
- Chemistry Department, Moscow State University, Moscow 119991, Russia; (A.N.); (T.S.); (S.T.); (P.Y.); (O.F.); (A.G.)
| | - Sergey Tokarev
- Chemistry Department, Moscow State University, Moscow 119991, Russia; (A.N.); (T.S.); (S.T.); (P.Y.); (O.F.); (A.G.)
- A.N. Nesmeyanov Institute of Organoelement Compounds RAS, Moscow 119991, Russia
| | - Polina Yaltseva
- Chemistry Department, Moscow State University, Moscow 119991, Russia; (A.N.); (T.S.); (S.T.); (P.Y.); (O.F.); (A.G.)
| | - Olga Fedorova
- Chemistry Department, Moscow State University, Moscow 119991, Russia; (A.N.); (T.S.); (S.T.); (P.Y.); (O.F.); (A.G.)
- A.N. Nesmeyanov Institute of Organoelement Compounds RAS, Moscow 119991, Russia
| | - Nikolay Khmelevsky
- LISM, Moscow State Technological University Stankin, Moscow 127055, Russia;
| | - Alexander Gaskov
- Chemistry Department, Moscow State University, Moscow 119991, Russia; (A.N.); (T.S.); (S.T.); (P.Y.); (O.F.); (A.G.)
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40
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Loh JYY, Kherani NP. X-ray Photospectroscopy and Electronic Studies of Reactor Parameters on Photocatalytic Hydrogenation of Carbon Dioxide by Defect-Laden Indium Oxide Hydroxide Nanorods. Molecules 2019; 24:molecules24213818. [PMID: 31652758 PMCID: PMC6864452 DOI: 10.3390/molecules24213818] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/31/2019] [Revised: 10/04/2019] [Accepted: 10/09/2019] [Indexed: 01/06/2023] Open
Abstract
In the study reported herein, glovebox-protected X-ray photoelectron spectroscopy (XPS) and in situ Hall charge carrier measurements provide new insights into the surface physical chemistry of gaseous H2, CO2, and H2+CO2 combined with nanostructured In2O(3−x)(OH)y nanorods, which ensue under photochemical and thermochemical operating conditions. Heterolytic dissociation of H2 in H2-only atmosphere appears to occur mainly under dark and ambient temperature conditions, while the greatest amount of OH shoulder expansion in H2+CO2 atmosphere appears to mainly occur under photoilluminated conditions. These results correlate with those of the Hall measurements, which show that the prevalence of homolytic over heterolytic dissociation at increasing temperatures leads to a steeper rate of increase in carrier concentrations; and that H2 adsorption is more prevalent than CO2 in H2+CO2 photoillumination conditions.
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Affiliation(s)
- Joel Y Y Loh
- Department of Electrical and Computing Engineering, University of Toronto, Toronto, ON M5S 3G4, Canada.
| | - Nazir P Kherani
- Department of Electrical and Computing Engineering, University of Toronto, Toronto, ON M5S 3G4, Canada.
- Department of Material Science and Engineering, University of Toronto, Toronto, ON M5S 3E4, Canada.
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Michel J, Splith D, Rombach J, Papadogianni A, Berthold T, Krischok S, Grundmann M, Bierwagen O, von Wenckstern H, Himmerlich M. Processing Strategies for High-Performance Schottky Contacts on n-Type Oxide Semiconductors: Insights from In 2O 3. ACS Appl Mater Interfaces 2019; 11:27073-27087. [PMID: 31269791 DOI: 10.1021/acsami.9b06455] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Preparation of rectifying Schottky contacts on n-type oxide semiconductors, such as indium oxide (In2O3), is often challenged by the presence of a distinct surface electron accumulation layer. We investigated the material properties and electrical transport characteristics of platinum contact/indium oxide heterojunctions to define routines for the preparation of high-performance Schottky diodes on n-type oxide semiconductors. Combining the evaluation of different Pt deposition methods, such as electron-beam evaporation and (reactive) sputtering in an (O and) Ar atmosphere, with oxygen plasma interface treatments, we identify key parameters to obtain Schottky-type contacts with high electronic barrier height and high rectification ratio. Different photoelectron spectroscopy approaches are compared to characterize the chemical properties of the contact layers and the interface region toward In2O3, to analyze charge transfer and plasma oxidation processes as well as to evaluate the precision and limits of different methodologies to determine heterointerface energy barriers. An oxygen-plasma-induced passivation of the semiconductor surface, which induces electron depletion and generates an intrinsic interface energy barrier, is found to be not sufficient to generate rectifying platinum contacts. The dissolution of the functional interface oxide layer within the Pt film results in an energy barrier of ∼0.5 eV, which is too low for an In2O3 electron concentration of ∼1018 cm-3. A reactive sputter process in an Ar and O atmosphere is required to fabricate rectifying contacts that are composed of platinum oxide (PtOx). Combining oxygen plasma interface oxidation of the semiconductor surface with reactive sputtering of PtOx layers results in the generation of a high Schottky barrier of ∼0.9 eV and a rectification ratio of up to 106. An additional oxygen plasma treatment after contact deposition further reduced the reverse leakage current, likely by eliminating a surface conduction path between the coplanar Ohmic and Schottky contacts. We conclude that processes that allow us to increase the oxygen content in the interface and contact region are essential for fabrication of device-quality-rectifying contacts on various oxide semiconductors.
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Affiliation(s)
- Jonas Michel
- Institut für Physik and Institut für Mikro- und Nanotechnologien , Technische Universität Ilmenau , PF 100565, 98684 Ilmenau , Germany
| | - Daniel Splith
- Felix Bloch Institute for Solid State Physics , Universität Leipzig , Linnéstr. 5 , 04103 Leipzig , Germany
| | - Julius Rombach
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Alexandra Papadogianni
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Theresa Berthold
- Institut für Physik and Institut für Mikro- und Nanotechnologien , Technische Universität Ilmenau , PF 100565, 98684 Ilmenau , Germany
| | - Stefan Krischok
- Institut für Physik and Institut für Mikro- und Nanotechnologien , Technische Universität Ilmenau , PF 100565, 98684 Ilmenau , Germany
| | - Marius Grundmann
- Felix Bloch Institute for Solid State Physics , Universität Leipzig , Linnéstr. 5 , 04103 Leipzig , Germany
| | - Oliver Bierwagen
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Holger von Wenckstern
- Felix Bloch Institute for Solid State Physics , Universität Leipzig , Linnéstr. 5 , 04103 Leipzig , Germany
| | - Marcel Himmerlich
- Institut für Physik and Institut für Mikro- und Nanotechnologien , Technische Universität Ilmenau , PF 100565, 98684 Ilmenau , Germany
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42
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Kim JS, Na CW, Kwak CH, Li HY, Yoon JW, Kim JH, Jeong SY, Lee JH. Humidity-Independent Gas Sensors Using Pr-Doped In 2O 3 Macroporous Spheres: Role of Cyclic Pr 3+/Pr 4+ Redox Reactions in Suppression of Water-Poisoning Effect. ACS Appl Mater Interfaces 2019; 11:25322-25329. [PMID: 31268653 DOI: 10.1021/acsami.9b06386] [Citation(s) in RCA: 25] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Pure and 3-12 at. % Pr-doped In2O3 macroporous spheres were fabricated by ultrasonic spray pyrolysis and their acetone-sensing characteristics under dry and humid conditions were investigated to design humidity-independent gas sensors. The 12 at. % Pr-doped In2O3 sensor exhibited approximately the same acetone responses and sensor resistances at 450 °C regardless of the humidity variation, whereas the pure In2O3 exhibited significant deterioration in gas-sensing characteristics upon the change in the atmosphere, from dry to humid (relative humidity: 80%). Moreover, the 12 at. % Pr-doped In2O3 sensor exhibited a high response to acetone with negligible cross responses to interfering gases (NH3, CO, benzene, toluene, NO2, and H2) under the highly humid atmosphere. The mechanism for the humidity-immune gas-sensing characteristics was investigated by X-ray photoelectron and diffuse reflectance infrared Fourier transform spectroscopies together with the phenomenological gas-sensing results and discussed in relation with Pr3+/Pr4+ redox pairs, regenerative oxygen adsorption, and scavenging of hydroxyl groups.
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Affiliation(s)
- Jun-Sik Kim
- Department of Materials Science and Engineering , Korea University , Seoul 02841 , Republic of Korea
| | - Chan Woong Na
- Dongnam Regional Division , Korea Institute of Industrial Technology , Busan 46938 , Republic of Korea
| | - Chang-Hoon Kwak
- Department of Materials Science and Engineering , Korea University , Seoul 02841 , Republic of Korea
| | - Hua-Yao Li
- School of Optical and Electronic Information , Huazhong University of Science and Technology , 1037 Luoyu Road , Wuhan , Hubei 430074 , P. R. China
| | - Ji Won Yoon
- Department of Materials Science and Engineering , Korea University , Seoul 02841 , Republic of Korea
| | - Jae-Hyeok Kim
- Department of Materials Science and Engineering , Korea University , Seoul 02841 , Republic of Korea
| | - Seong-Yong Jeong
- Department of Materials Science and Engineering , Korea University , Seoul 02841 , Republic of Korea
| | - Jong-Heun Lee
- Department of Materials Science and Engineering , Korea University , Seoul 02841 , Republic of Korea
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43
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Bonaccorsi L, Malara A, Donato A, Donato N, Leonardi SG, Neri G. Effects of UV Irradiation on the Sensing Properties of In 2O 3 for CO Detection at Low Temperature. Micromachines (Basel) 2019; 10:mi10050338. [PMID: 31121927 PMCID: PMC6562503 DOI: 10.3390/mi10050338] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/29/2019] [Revised: 05/13/2019] [Accepted: 05/17/2019] [Indexed: 11/16/2022]
Abstract
In this study, UV irradiation was used to improve the response of indium oxide (In2O3) used as a CO sensing material for a resistive sensor operating in a low temperature range, from 25 °C to 150 °C. Different experimental conditions have been compared, varying UV irradiation mode and sensor operating temperature. Results demonstrated that operating the sensor under continuous UV radiation did not improve the response to target gas. The most advantageous condition was obtained when the UV LED irradiated the sensor in regeneration and was turned off during CO detection. In this operating mode, the semiconductor layer showed an apparent "p-type" behavior due to the UV irradiation. Overall, the effect was an improvement of the indium oxide response at 100 °C toward low CO concentrations (from 1 to 10 ppm) that showed higher results than in the dark, which is promising to extend the detection of CO with an In2O3-based sensor in the sub-ppm range.
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Affiliation(s)
- Lucio Bonaccorsi
- Dipartimento DICEAM, Università Mediterranea, Loc. Feo di Vito, 89060 Reggio Cal, Italy.
| | - Angela Malara
- Dipartimento DICEAM, Università Mediterranea, Loc. Feo di Vito, 89060 Reggio Cal, Italy.
| | - Andrea Donato
- Dipartimento DICEAM, Università Mediterranea, Loc. Feo di Vito, 89060 Reggio Cal, Italy.
| | - Nicola Donato
- Dipartimento di Ingegneria, Università di Messina, C.da Di Dio, 98166 Messina, Italy.
| | | | - Giovanni Neri
- Dipartimento di Ingegneria, Università di Messina, C.da Di Dio, 98166 Messina, Italy.
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Tandon B, Agrawal A, Heo S, Milliron DJ. Competition between Depletion Effects and Coupling in the Plasmon Modulation of Doped Metal Oxide Nanocrystals. Nano Lett 2019; 19:2012-2019. [PMID: 30794418 DOI: 10.1021/acs.nanolett.9b00079] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Degenerately doped semiconductor nanocrystals (NCs) exhibit strong light-matter interactions due to localized surface plasmon resonance (LSPR) in the near- to mid-infrared region. Besides being readily tuned through dopant concentration introduced during synthesis, this LSPR can also be dynamically modulated by applying an external electrochemical potential. This characteristic makes these materials candidates for electrochromic window applications. Here, using prototypical doped indium oxide NCs as a model system, we find that the extent of electrochemical modulation of LSPR frequency is governed by the depletion width and the extent of inter-NC LSPR coupling, which are indirectly controlled by the dopant density, size, and packing density of the NCs. The depletion layer is a near-surface region with a sharply reduced free carrier population that occurs whenever the surface potential lies below the Fermi level. Changes in the depletion width under applied bias substantially control the spectral modulation of the LSPR of individual NCs and also modify the inter-NC LSPR coupling, which additionally modulates the LSPR absorption on the NC film scale. Here, we show that both of these effects must be considered primary factors in determining the extent of LSPR frequency modulation and that the dominant factor depends on NC size. For a constant doping concentration, depletion effects govern LSPR modulation for smaller NCs, while LSPR coupling is prevalent in larger NCs. Consequently, as the size of the NCs is increased while keeping the doping concentration constant, we observe a reversal in the sign of the LSPR frequency modulation from positive to negative.
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Affiliation(s)
- Bharat Tandon
- McKetta Department of Chemical Engineering , University of Texas at Austin , Austin , Texas 78712-1589 , United States
- Department of Chemistry , Indian Institute of Science Education and Research , Dr. Homi Bhabha Road , Pune 411008 , India
| | - Ankit Agrawal
- McKetta Department of Chemical Engineering , University of Texas at Austin , Austin , Texas 78712-1589 , United States
| | - Sungyeon Heo
- McKetta Department of Chemical Engineering , University of Texas at Austin , Austin , Texas 78712-1589 , United States
| | - Delia J Milliron
- McKetta Department of Chemical Engineering , University of Texas at Austin , Austin , Texas 78712-1589 , United States
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45
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Xie H, Chen S, Ma F, Liang J, Miao Z, Wang T, Wang HL, Huang Y, Li Q. Boosting Tunable Syngas Formation via Electrochemical CO 2 Reduction on Cu/In 2O 3 Core/Shell Nanoparticles. ACS Appl Mater Interfaces 2018; 10:36996-37004. [PMID: 30303003 DOI: 10.1021/acsami.8b12747] [Citation(s) in RCA: 50] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
In this work, monodisperse core/shell Cu/In2O3 nanoparticles (NPs) were developed to boost efficient and tunable syngas formation via electrochemical CO2 reduction for the first time. The efficiency and composition of syngas production on the developed carbon-supported Cu/In2O3 catalysts are highly dependent on the In2O3 shell thickness (0.4-1.5 nm). As a result, a wide H2/CO ratio (4/1 to 0.4/1) was achieved on the Cu/In2O3 catalysts by controlling the shell thickness and the applied potential (from -0.4 to -0.9 V vs reversible hydrogen electrode), with Faraday efficiency of syngas formation larger than 90%. Specifically, the best-performing Cu/In2O3 catalyst demonstrates remarkably large current densities under low overpotentials (4.6 and 12.7 mA/cm2 at -0.6 and -0.9 V, respectively), which are competitive with most of the reported systems for syngas formation. Mechanistic discussion implicates that the synergistic effect between lattice compression and Cu doping in the In2O3 shell may enhance the binding of *COOH on the Cu/In2O3 NP surface, leading to the enhanced CO generation relative to Cu and In2O3 catalysts. This report demonstrates a new strategy to realize efficient and tunable syngas formation via rationally designed core/shell catalyst configuration.
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Affiliation(s)
- Huan Xie
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology , Wuhan , Hubei 430074 , China
| | - Shaoqing Chen
- Department of Materials Science and Engineering , Southern University of Science and Technology , Shenzhen , Guangdong 518055 , China
| | - Feng Ma
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology , Wuhan , Hubei 430074 , China
| | - Jiashun Liang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology , Wuhan , Hubei 430074 , China
| | - Zhengpei Miao
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology , Wuhan , Hubei 430074 , China
| | - Tanyuan Wang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology , Wuhan , Hubei 430074 , China
| | - Hsing-Lin Wang
- Department of Materials Science and Engineering , Southern University of Science and Technology , Shenzhen , Guangdong 518055 , China
| | - Yunhui Huang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology , Wuhan , Hubei 430074 , China
| | - Qing Li
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology , Wuhan , Hubei 430074 , China
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46
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Naberezhnyi D, Rumyantseva M, Filatova D, Batuk M, Hadermann J, Baranchikov A, Khmelevsky N, Aksenenko A, Konstantinova E, Gaskov A. Effects of Ag Additive in Low Temperature CO Detection with In₂O₃ Based Gas Sensors. Nanomaterials (Basel) 2018; 8:E801. [PMID: 30297657 DOI: 10.3390/nano8100801] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/11/2018] [Revised: 10/04/2018] [Accepted: 10/05/2018] [Indexed: 11/16/2022]
Abstract
Nanocomposites In2O3/Ag obtained by ultraviolet (UV) photoreduction and impregnation methods were studied as materials for CO sensors operating in the temperature range 25–250 °C. Nanocrystalline In2O3 and In2O3/Ag nanocomposites were characterized by X-ray diffraction (XRD), single-point Brunauer-Emmet-Teller (BET) method, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) with energy dispersive X-ray (EDX) mapping. The active surface sites were investigated using Fourier-transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), electron paramagnetic resonance (EPR) spectroscopy and thermo-programmed reduction with hydrogen (TPR-H2) method. Sensor measurements in the presence of 15 ppm CO demonstrated that UV treatment leads to a complete loss of In2O3 sensor sensitivity, while In2O3/Ag-UV nanocomposite synthesized by UV photoreduction demonstrates an increased sensor signal to CO at T < 200 °C. The observed high sensor response of the In2O3/Ag-UV nanocomposite at room temperature may be due to the realization of an additional mechanism of CO oxidation with participation of surface hydroxyl groups associated via hydrogen bonds.
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47
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Zhao C, Xu X, Bae SH, Yang Q, Liu W, Belling JN, Cheung KM, Rim YS, Yang Y, Andrews AM, Weiss PS. Large-Area, Ultrathin Metal-Oxide Semiconductor Nanoribbon Arrays Fabricated by Chemical Lift-Off Lithography. Nano Lett 2018; 18:5590-5595. [PMID: 30060654 PMCID: PMC6363913 DOI: 10.1021/acs.nanolett.8b02054] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Nanoribbon- and nanowire-based field-effect transistors (FETs) have attracted significant attention due to their high surface-to-volume ratios, which make them effective as chemical and biological sensors. However, the conventional nanofabrication of these devices is challenging and costly, posing a major barrier to widespread use. We report a high-throughput approach for producing arrays of ultrathin (∼3 nm) In2O3 nanoribbon FETs at the wafer scale. Uniform films of semiconducting In2O3 were prepared on Si/SiO2 surfaces via a sol-gel process prior to depositing Au/Ti metal layers. Commercially available high-definition digital versatile discs were employed as low-cost, large-area templates to prepare polymeric stamps for chemical lift-off lithography, which selectively removed molecules from self-assembled monolayers functionalizing the outermost Au surfaces. Nanoscale chemical patterns, consisting of one-dimensional lines (200 nm wide and 400 nm pitch) extending over centimeter length scales, were etched into the metal layers using the remaining monolayer regions as resists. Subsequent etch processes transferred the patterns into the underlying In2O3 films before the removal of the protective organic and metal coatings, revealing large-area nanoribbon arrays. We employed nanoribbons in semiconducting FET channels, achieving current on-to-off ratios over 107 and carrier mobilities up to 13.7 cm2 V-1 s-1. Nanofabricated structures, such as In2O3 nanoribbons and others, will be useful in nanoelectronics and biosensors. The technique demonstrated here will enable these applications and expand low-cost, large-area patterning strategies to enable a variety of materials and design geometries in nanoelectronics.
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Affiliation(s)
- Chuanzhen Zhao
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Xiaobin Xu
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Sang-Hoon Bae
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
- Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Qing Yang
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Wenfei Liu
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Jason N. Belling
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Kevin M. Cheung
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - You Seung Rim
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
- Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
- School of Intelligent Mechatronics Engineering, Sejong University, Seoul 05006, Republic of Korea
| | - Yang Yang
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
- Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Anne M. Andrews
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
- Department of Psychiatry and Biobehavioral Sciences, Semel Institute for Neuroscience and Human Behavior, and Hatos Center for Neuropharmacology, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Paul S. Weiss
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
- Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
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48
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Huang W, Zhu B, Chang SY, Zhu S, Cheng P, Hsieh YT, Meng L, Wang R, Wang C, Zhu C, McNeill C, Wang M, Yang Y. High Mobility Indium Oxide Electron Transport Layer for an Efficient Charge Extraction and Optimized Nanomorphology in Organic Photovoltaics. Nano Lett 2018; 18:5805-5811. [PMID: 30075074 DOI: 10.1021/acs.nanolett.8b02452] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The electron transport layer (ETL) plays an important role in determining the device efficiency of organic solar cells (OSCs). A rational design of an ETL for OSCs targets high charge extraction and induction of an optimized active layer morphology. In this Letter, a high mobility In2O3 synthesized via a solution-processed combustion reaction is successfully used as a universal ETL in an organic photovoltaic device. With the modification of a thin layer of polyethylenimine ethoxylated (PEIE), a device based on crystalline In2O3 outperforms its counterpart, ZnO, in both PBDTTT-EFT-based fullerene and nonfullerene systems. As ZnO is replaced by In2O3, the average efficiency increases from 9.5% to 10.5% for PBDTTT-EFT-PC71BM fullerene-based organic solar cells and also increases from 10.8% to 11.5% for PBDTTT-EFT-IEICO-4F nonfullerene-based organic solar cells, respectively. Morphological studies have unraveled the fact that the crystalline In2O3 ETL with highly aligned nanocrystallites has induced the crystallization of polymer into a preferential molecular packing that favors the charge transport across an active layer. From the photophysical study, it is found that charge extraction in the crystalline In2O3 device is significantly faster than in the ZnO device due to the higher mobility of In2O3 and optimized nanomorphology of the active layer.
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Affiliation(s)
- Wenchao Huang
- Department of Materials Science and Engineering , University of California , Los Angeles , California 90095 , United States
- California NanoSystems Institute , University of California , Los Angeles , California 90095 , United States
| | - Bowen Zhu
- Department of Materials Science and Engineering , University of California , Los Angeles , California 90095 , United States
- California NanoSystems Institute , University of California , Los Angeles , California 90095 , United States
| | - Sheng-Yung Chang
- Department of Materials Science and Engineering , University of California , Los Angeles , California 90095 , United States
- California NanoSystems Institute , University of California , Los Angeles , California 90095 , United States
| | - Shuanglin Zhu
- Department of Materials Science and Engineering , University of California , Los Angeles , California 90095 , United States
- California NanoSystems Institute , University of California , Los Angeles , California 90095 , United States
| | - Pei Cheng
- Department of Materials Science and Engineering , University of California , Los Angeles , California 90095 , United States
- California NanoSystems Institute , University of California , Los Angeles , California 90095 , United States
| | - Yao-Tsung Hsieh
- Department of Materials Science and Engineering , University of California , Los Angeles , California 90095 , United States
- California NanoSystems Institute , University of California , Los Angeles , California 90095 , United States
| | - Lei Meng
- Department of Materials Science and Engineering , University of California , Los Angeles , California 90095 , United States
- California NanoSystems Institute , University of California , Los Angeles , California 90095 , United States
| | - Rui Wang
- Department of Materials Science and Engineering , University of California , Los Angeles , California 90095 , United States
- California NanoSystems Institute , University of California , Los Angeles , California 90095 , United States
| | - Chaochen Wang
- Department of Materials Science and Engineering , University of California , Los Angeles , California 90095 , United States
- California NanoSystems Institute , University of California , Los Angeles , California 90095 , United States
| | - Chenhui Zhu
- Advanced Light Source , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
| | - Christopher McNeill
- Department of Materials Science and Engineering , Monash University , Clayton , Victoria 3800 , Australia
| | - Mingkui Wang
- Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430070 , People's Republic of China
| | - Yang Yang
- Department of Materials Science and Engineering , University of California , Los Angeles , California 90095 , United States
- California NanoSystems Institute , University of California , Los Angeles , California 90095 , United States
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Rumyantseva M, Nasriddinov A, Vladimirova S, Tokarev S, Fedorova O, Krylov I, Drozdov K, Baranchikov A, Gaskov A. Photosensitive Organic-Inorganic Hybrid Materials for Room Temperature Gas Sensor Applications. Nanomaterials (Basel) 2018; 8:E671. [PMID: 30158451 DOI: 10.3390/nano8090671] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/24/2018] [Revised: 08/22/2018] [Accepted: 08/28/2018] [Indexed: 01/22/2023]
Abstract
In this work, the hybrids based on nanocrystalline SnO₂ or In₂O₃ semiconductor matrixes and heterocyclic Ru(II) complex are studied as materials for gas sensors operating at room temperature under photoactivation with visible light. Nanocrystalline semiconductor oxides are obtained by chemical precipitation with subsequent thermal annealing and characterized by XRD, SEM and single-point BET methods. The heterocyclic Ru(II) complex is synthesized for the first time and investigated by ¹H NMR, 13C NMR APT, MALDI-MS analysis, and UV-Vis spectroscopy. The HOMO and LUMO energies of the Ru(II) complex are calculated from cyclic voltammetry data. The hybrid materials are characterized by TGA-MS analysis and EDX mapping. The optical properties of hybrids are studied by UV-Vis spectroscopy in the diffuse reflection mode. The investigation of spectral dependencies of photoconductivity of hybrid samples demonstrates that the role of organic dye consists in shifting the photosensitivity range towards longer wavelengths. Sensor measurements demonstrate that hybrid materials are able to detect NO₂ in the concentration range of 0.25⁻2 ppm without the use of thermal heating under periodic illumination with even low-energy long-wavelength (red) light.
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Krausmann J, Sanctis S, Engstler J, Luysberg M, Bruns M, Schneider JJ. Charge Transport in Low-Temperature Processed Thin-Film Transistors Based on Indium Oxide/Zinc Oxide Heterostructures. ACS Appl Mater Interfaces 2018; 10:20661-20671. [PMID: 29888585 DOI: 10.1021/acsami.8b03322] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The influence of the composition within multilayered heterostructure oxide semiconductors has a critical impact on the performance of thin-film transistor (TFT) devices. The heterostructures, comprising alternating polycrystalline indium oxide and zinc oxide layers, are fabricated by a facile atomic layer deposition (ALD) process, enabling the tuning of its electrical properties by precisely controlling the thickness of the individual layers. This subsequently results in enhanced TFT performance for the optimized stacked architecture after mild thermal annealing at temperatures as low as 200 °C. Superior transistor characteristics, resulting in an average field-effect mobility (μsat.) of 9.3 cm2 V-1 s-1 ( W/ L = 500), an on/off ratio ( Ion/ Ioff) of 5.3 × 109, and a subthreshold swing of 162 mV dec-1, combined with excellent long-term and bias stress stability are thus demonstrated. Moreover, the inherent semiconducting mechanism in such multilayered heterostructures can be conveniently tuned by controlling the thickness of the individual layers. Herein, devices comprising a higher In2O3/ZnO ratio, based on individual layer thicknesses, are predominantly governed by percolation conduction with temperature-independent charge carrier mobility. Careful adjustment of the individual oxide layer thicknesses in devices composed of stacked layers plays a vital role in the reduction of trap states, both interfacial and bulk, which consequently deteriorates the overall device performance. The findings enable an improved understanding of the correlation between TFT performance and the respective thin-film composition in ALD-based heterostructure oxides.
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Affiliation(s)
- Jan Krausmann
- Fachbereich Chemie, Eduard-Zintl-Institut, Fachgebiet Anorganische Chemie , Technische Universität Darmstadt , Alarich-Weiss-Straße 12 , 64287 Darmstadt , Germany
| | - Shawn Sanctis
- Fachbereich Chemie, Eduard-Zintl-Institut, Fachgebiet Anorganische Chemie , Technische Universität Darmstadt , Alarich-Weiss-Straße 12 , 64287 Darmstadt , Germany
| | - Jörg Engstler
- Fachbereich Chemie, Eduard-Zintl-Institut, Fachgebiet Anorganische Chemie , Technische Universität Darmstadt , Alarich-Weiss-Straße 12 , 64287 Darmstadt , Germany
| | - Martina Luysberg
- Forschungszentrum Jülich GmbH, Ernst Ruska-Centre (ERC) and Peter Grünberg Institute (PGI) , Wilhelm-Johnen-Straße , 52428 Jülich , Germany
| | - Michael Bruns
- Institute for Applied Materials (IAM-ESS) , Karlsruhe Institute of Technology , Hermann-von-Helmholtz-Platz 1, B 321 , D-76344 Eggenstein-Leopoldshafen , Germany
| | - Jörg J Schneider
- Fachbereich Chemie, Eduard-Zintl-Institut, Fachgebiet Anorganische Chemie , Technische Universität Darmstadt , Alarich-Weiss-Straße 12 , 64287 Darmstadt , Germany
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