Processing Strategies for High-Performance Schottky Contacts on n-Type Oxide Semiconductors: Insights from In2O3

Tuning the Surface Electron Accumulation Layer of In2 O3 by Adsorption of Molecular Electron Donors and Acceptors

In2 O3 , an n-type semiconducting transparent transition metal oxide, possesses a surface electron accumulation layer (SEAL) resulting from downward surface band bending due to the presence of ubiquitous oxygen vacancies. Upon annealing In2 O3 in ultrahigh vacuum or in the presence of oxygen, the SEAL can be enhanced or depleted, as governed by the resulting density of oxygen vacancies at the surface. In this work, an alternative route to tune the SEAL by adsorption of strong molecular electron donors (specifically here ruthenium pentamethylcyclopentadienyl mesitylene dimer, [RuCp*mes]2 ) and acceptors (here 2,2'-(1,3,4,5,7,8-hexafluoro-2,6-naphthalene-diylidene)bis-propanedinitrile, F6 TCNNQ) is demonstrated. Starting from an electron-depleted In2 O3 surface after annealing in oxygen, the deposition of [RuCp*mes]2 restores the accumulation layer as a result of electron transfer from the donor molecules to In2 O3 , as evidenced by the observation of (partially) filled conduction sub-bands near the Fermi level via angle-resolved photoemission spectroscopy, indicating the formation of a 2D electron gas due to the SEAL. In contrast, when F6 TCNNQ is deposited on a surface annealed without oxygen, the electron accumulation layer vanishes and an upward band bending is generated at the In2 O3 surface due to electron depletion by the acceptor molecules. Hence, further opportunities to expand the application of In2 O3 in electronic devices are revealed.

Controllable fabrication of hollow In2O3 nanoparticles by electron beam irradiation

A growth strategy is presented for controllable fabrication of hollow In₂O₃ nanoparticles (NPs) via oxidation of In nanocrystals under electron beam irradiation. The morphology of the NPs can be tailored by changing the electron beam energy and current density. Yolk-shell NPs are preferentially formed under 200 keV electron beam irradiation, while hollow NPs are preferentially formed at 300 keV. This work confirms that electron beam irradiation is a valuable method for the engineering and modification of nanomaterials.

Reversible Barrier Switching of ZnO/RuO2 Schottky Diodes

The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies.

Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors

The electronic and optical properties of (In_xGa_1-x)₂O₃ alloys are highly tunable, giving rise to a myriad of applications including transparent conductors, transparent electronics, and solar-blind ultraviolet photodetectors. Here, we investigate these properties for a high quality pulsed laser deposited film which possesses a lateral cation composition gradient (0.01 ≤ x ≤ 0.82) and three crystallographic phases (monoclinic, hexagonal, and bixbyite). The optical gaps over this composition range are determined, and only a weak optical gap bowing is found (b = 0.36 eV). The valence band edge evolution along with the change in the fundamental band gap over the composition gradient enables the surface space-charge properties to be probed. This is an important property when considering metal contact formation and heterojunctions for devices. A transition from surface electron accumulation to depletion occurs at x ∼ 0.35 as the film goes from the bixbyite In₂O₃ phase to the monoclinic β-Ga₂O₃ phase. The electronic structure of the different phases is investigated by using density functional theory calculations and compared to the valence band X-ray photoemission spectra. Finally, the properties of these alloys, such as the n-type dopability of In₂O₃ and use of Ga₂O₃ as a solar-blind UV detector, are understood with respect to other common-cation compound semiconductors in terms of simple chemical trends of the band edge positions and the hydrostatic volume deformation potential.

Accelerated Aging Stability of β-Ga2O3-Titanium/Gold Ohmic Interfaces

Stable ohmic contacts are critical to enable efficient operation of high-voltage electronic devices using ultrawide bandgap semiconductors. Here we perform, for the first time, thermally accelerated aging of Ti/Au ohmic interfaces to (010) β-Ga₂O₃. We find that a heavily doped semiconductor, doped n-type by Si-ion implantation, treated with reactive ion etch (RIE), results in a low specific contact resistance of ∼10^-5 Ω cm² that is stable upon accelerated thermal aging at 300 °C for 108 h. The low resistance interface is due to thermionic field emission of electrons over an inhomogeneous barrier. Scanning/transmission electron microscopy indicates that the multi-layered structure and elemental distribution across the contact interface, formed during a 1 min 470 °C post-metallization anneal, do not change noticeably over the aging period. A ∼1 nm interfacial layer is observed by high-resolution microscopy at the Ti-TiO_x/Ga₂O₃ interface on all samples exposed to RIE, which may contribute to their excellent stability. In addition, longer-range facet-like interfacial features are observed, which may contribute to the inhomogeneous barrier. In contrast, Ti/Au junctions to moderately doped (010) Ga₂O₃ made with no RIE treatment exhibit a high contact resistance that increases upon accelerated aging, along with a partially lattice-matched interface. The methods used here to understand the process, structure, and electrical property relationships for Ti/Au contact interfaces to β-Ga₂O₃ can be applied to assess and tune the stability of a variety of other oxide-semiconductor interfaces.

Atomically Dispersed Au on In2O3 Nanosheets for Highly Sensitive and Selective Detection of Formaldehyde

As an important industrial chemical, formaldehyde is used in various fields but is harmful to health. Developing a convenient detection device for formaldehyde is significant. Based on atomically dispersed Au on In₂O₃ nanosheets, a formaldehyde sensor was fabricated in this work. The highly dispersed Au obtained by the ultraviolet (UV) light-assisted reduction method helps improve the sensing performance. A meager loading amount (0.01 wt %) of Au on In₂O₃ nanosheets exhibits high sensitivity toward ppb-level formaldehyde. Au acts as an electron sink and promotes the oxidation of formaldehyde. Atomically dispersed Au on In₂O₃ nanosheets decreases the activation energy and increases the number of active sites, which result in a highly efficient conversion of formaldehyde and a marked resistance change of the fabricated sensors. The selective adsorption and oxidation of formaldehyde on single atom Au's uniform sites establish excellent selectivity. Besides, the sensor exhibits short response/recovery time and excellent stability, with promising applications in formaldehyde detection.