1
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Zhang Y, He L, Cai Y, Zhang J, Wang P. Aza[5]helicene-Derived Semiconducting Polymers for Improved Performance in Perovskite Solar Cells: Exploring Energetic and Morphological Influences. Angew Chem Int Ed Engl 2024; 63:e202401605. [PMID: 38363082 DOI: 10.1002/anie.202401605] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/23/2024] [Revised: 02/16/2024] [Accepted: 02/16/2024] [Indexed: 02/17/2024]
Abstract
The strategic design of solution-processable semiconducting polymers possessing both matched energy levels and elevated glass transition temperatures is of urgent importance in the progression of thermally robust n-i-p perovskite solar cells with efficiencies exceeding 25 %. In this work, we employed direct arylation polymerization to achieve the high-yield synthesis of three aza[5]helicene-derived copolymers with distinct HOMO energy levels and exceptional glass transition temperatures. Upon integration of these semiconducting polymers into formamidinium lead triiodide-based perovskite solar cells, marked disparities in photovoltaic parameters manifest, primarily stemming from variations in the electrical conductivity and film morphology of the hole transport layers. The p-A5HP-E-POZOD-E copolymer, featuring a main chain comprising alternating repeats of aza[5]helicene, ethylenedioxythiophene, phenoxazine, and ethylenedioxythiophene, attains an initial average efficiency of 25.5 %, markedly surpassing reference materials such as spiro-OMeTAD (23.0 %), PTAA (17.0 %), and P3HT (11.6 %). Notably, p-A5HP-E-POZOD-E exhibits a high cohesive energy density, resulting in enhanced Young's modulus and diminished external species diffusion coefficients, thereby conferring perovskite solar cells with exceptional 85 °C tolerance and operational stability.
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Affiliation(s)
- Yuyan Zhang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Chemistry, Zhejiang University, Hangzhou, 310058, China
| | - Lifei He
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Chemistry, Zhejiang University, Hangzhou, 310058, China
| | - Yaohang Cai
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Chemistry, Zhejiang University, Hangzhou, 310058, China
| | - Jing Zhang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Chemistry, Zhejiang University, Hangzhou, 310058, China
| | - Peng Wang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Chemistry, Zhejiang University, Hangzhou, 310058, China
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2
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Guo Y, Li M, Zhao C, Zhang Y, Jia C, Guo X. Understanding Emergent Complexity from a Single-Molecule Perspective. JACS Au 2024; 4:1278-1294. [PMID: 38665639 PMCID: PMC11040556 DOI: 10.1021/jacsau.3c00845] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/29/2023] [Revised: 02/27/2024] [Accepted: 02/27/2024] [Indexed: 04/28/2024]
Abstract
Molecules, with structural, scaling, and interaction diversities, are crucial for the emergence of complex behaviors. Interactions are essential prerequisites for complex systems to exhibit emergent properties that surpass the sum of individual component characteristics. Tracing the origin of complex molecular behaviors from interactions is critical to understanding ensemble emergence, and requires insights at the single-molecule level. Electrical signals from single-molecule junctions enable the observation of individual molecular behaviors, as well as intramolecular and intermolecular interactions. This technique provides a foundation for bottom-up explorations of emergent complexity. This Perspective highlights investigations of various interactions via single-molecule junctions, including intramolecular orbital and weak intermolecular interactions and interactions in chemical reactions. It also provides potential directions for future single-molecule junctions in complex system research.
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Affiliation(s)
- Yilin Guo
- Beijing
National Laboratory for Molecular Sciences, National Biomedical Imaging
Center, College of Chemistry and Molecular Engineering, Peking University, 292 Chengfu Road, Haidian District, Beijing 100871, P. R. China
| | - Mingyao Li
- School
of Materials Science and Engineering, Peking
University, No.5 Yiheyuan
Road, Haidian District, Beijing 100871, P. R. China
| | - Cong Zhao
- Center
of Single-Molecule Sciences, Institute of Modern Optics, Frontiers
Science Center for New Organic Matter, Tianjin Key Laboratory of Micro-scale
Optical Information Science and Technology, College of Electronic
Information and Optical Engineering, Nankai
University, 38 Tongyan Road, Jinnan District, Tianjin 300350, P. R. China
| | - Yanfeng Zhang
- School
of Materials Science and Engineering, Peking
University, No.5 Yiheyuan
Road, Haidian District, Beijing 100871, P. R. China
| | - Chuancheng Jia
- Center
of Single-Molecule Sciences, Institute of Modern Optics, Frontiers
Science Center for New Organic Matter, Tianjin Key Laboratory of Micro-scale
Optical Information Science and Technology, College of Electronic
Information and Optical Engineering, Nankai
University, 38 Tongyan Road, Jinnan District, Tianjin 300350, P. R. China
| | - Xuefeng Guo
- Beijing
National Laboratory for Molecular Sciences, National Biomedical Imaging
Center, College of Chemistry and Molecular Engineering, Peking University, 292 Chengfu Road, Haidian District, Beijing 100871, P. R. China
- Center
of Single-Molecule Sciences, Institute of Modern Optics, Frontiers
Science Center for New Organic Matter, Tianjin Key Laboratory of Micro-scale
Optical Information Science and Technology, College of Electronic
Information and Optical Engineering, Nankai
University, 38 Tongyan Road, Jinnan District, Tianjin 300350, P. R. China
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3
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Tang T, Zheng JXK, Archer LA. Controlling Electrodeposition in Nonplanar High Areal Capacity Battery Anodes via Charge Transport and Chemical Modulation. JACS Au 2024; 4:1365-1373. [PMID: 38665677 PMCID: PMC11040661 DOI: 10.1021/jacsau.3c00721] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/17/2023] [Revised: 01/05/2024] [Accepted: 01/08/2024] [Indexed: 04/28/2024]
Abstract
Controlling the morphological evolution of electrochemical crystal growth in battery anodes is of fundamental and practical importance, particularly towards realizing practical, high-energy batteries based on metal electrodes. Such batteries require highly reversible plating/stripping reactions at the anode to achieve a long cycle life. While conformal electrodeposition and electrode reversibility have been demonstrated in numerous proof-of-concept experiments featuring moderate to low areal capacity (≤3 mA h/cm2) electrodes, achieving high levels of reversibility is progressively challenging at the higher capacities (e.g., 10 mA h/cm2), required in applications. Nonplanar, "3D" electrodes composed of electrically conductive, porous substrates are conventionally thought to overcome trade-offs between reversibility and capacity because they hypothetically "host" the electrodeposits in an electronically conducting framework, providing redundant pathways for electron flow. Here, we challenge this hypothesis and instead show that a nonplanar substrate with moderate electrical conductivity (ideally, with an electrical conductance similar to the ionic conductance of the electrolyte) and composed of a passivated cathode-facing surface efficiently regulates electro-crystallization. In contrast, an architecture with a high intrinsic electrical conductivity or with a high electrical conductivity coating on the front surface results in dominantly out-of-plane growth, making the 3D architecture in effect function as a 2D substrate. Using Zn as an example, we demonstrate that interconnected carbon fiber substrates coated by SiO2 on the front and Cu on the back successfully ushers electroplated Zn metal into the 3D framework at a macroscopic length scale, maximizing use of the interior space of the framework. The effective integration of electrodeposits into the 3D framework also enables unprecedented plating/stripping reversibility >99.5% at high current density (e.g., 10 mA/cm2) and high areal capacities (e.g., 10 mA h/cm2). Used in full-cell Zn||NaV3O8 batteries with stringent N/P ratios of 3:1, the substrates are also shown to enhance cycle life.
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Affiliation(s)
- Tian Tang
- Department
of Materials Science and Engineering, Cornell
University, Ithaca, New York 14853, United States
| | - J. X. Kent Zheng
- McKetta
Department of Chemical Engineering, The
University of Texas at Austin, Austin, Texas 78712, United States
| | - Lynden A. Archer
- Robert
Frederick Smith School of Chemical and Biomolecular Engineering, Cornell University, Ithaca, New York 14853, United States
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4
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Miller E, Hansen KR, Whittaker-Brooks L. Charge Transport and Ion Kinetics in 1D TiS 2 Structures are Dependent on the Introduction of Selenium Extrinsic Atoms. ACS Nanosci Au 2024; 4:146-157. [PMID: 38644968 PMCID: PMC11027203 DOI: 10.1021/acsnanoscienceau.3c00059] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/17/2023] [Revised: 01/12/2024] [Accepted: 01/16/2024] [Indexed: 04/23/2024]
Abstract
Improving charge insertion into intercalation hosts is essential for crucial energy and memory technologies. The layered material TiS2 provides a promising template for study, but further development of this compound demands improvement to its ion kinetics. Here, we report the incorporation of Se atoms into TiS2 nanobelts to address barriers related to sluggish ion motion in the material. TiS1.8Se0.2 nanobelts are synthesized through a solid-state method, and structural and electrochemical characterizations reveal that solid solutions based on TiS1.8Se0.2 nanobelts display increased interlayer spacing and electrical conductivity compared to pure TiS2 nanobelts. Cyclic voltammetry and electrochemical impedance spectroscopy indicate that the capacitive behavior of the TiS2 electrode is improved upon Se incorporation, particularly at low depths of discharge in the materials. The presence of Se in the structure can be directly related to an increased pseudocapacitive contribution to electrode behavior at a low Li+ content in the material and thus to improved ion kinetics in the TiS1.8Se0.2 nanobelts.
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Affiliation(s)
- Edwin
J. Miller
- Department of Chemistry, University of Utah, 315 South 1400 East, Salt
Lake City, Utah 84112, United States
| | - Kameron R. Hansen
- Department of Chemistry, University of Utah, 315 South 1400 East, Salt
Lake City, Utah 84112, United States
| | - Luisa Whittaker-Brooks
- Department of Chemistry, University of Utah, 315 South 1400 East, Salt
Lake City, Utah 84112, United States
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5
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Ren M, Fang L, Zhang Y, Eickemeyer FT, Yuan Y, Zakeeruddin SM, Grätzel M, Wang P. Durable Perovskite Solar Cells with 24.5% Average Efficiency: The Role of Rigid Conjugated Core in Molecular Semiconductors. Adv Mater 2024:e2403403. [PMID: 38631689 DOI: 10.1002/adma.202403403] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/06/2024] [Revised: 04/05/2024] [Indexed: 04/19/2024]
Abstract
Efficient and robust n-i-p perovskite solar cells necessitate superior organic hole-transport materials with both mechanical and electronic prowess. Deciphering the structure-property relationship of these materials is crucial for practical perovskite solar cell applications. Through direct arylation, two high glass transition temperature molecular semiconductors, DBC-ETPA (202 °C) and TPE-ETPA (180 °C) are synthesized, using dibenzo[g,p]chrysene (DBC) and 1,1,2,2-tetraphenylethene (TPE) tetrabromides with triphenylene-ethylenedioxythiophene-dimethoxytriphenylamine (ETPA). In comparison to spiro-OMeTAD, both semiconductors exhibit shallower HOMO energy levels, resulting in increased hole densities (generated by air oxidation doping) and accelerated hole extraction from photoexcited perovskite. Experimental and theoretical studies highlight the more rigid DBC core, enhancing hole mobility due to reduced reorganization energy and lower energy disorder. Importantly, DBC-ETPA possesses a higher cohesive energy density, leading to lower ion diffusion coefficients and higher Young's moduli. Leveraging these attributes, DBC-ETPA is employed as the primary hole-transport layer component, yielding perovskite solar cells with an average efficiency of 24.5%, surpassing spiro-OMeTAD reference cells (24.0%). Furthermore, DBC-ETPA-based cells exhibit superior operational stability and 85 °C thermal storage stability.
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Affiliation(s)
- Ming Ren
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Chemistry, Zhejiang University, Hangzhou, 310058, China
- Laboratory of Photonics and Interfaces, Institute of Chemical Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH 1015, Switzerland
| | - Lingyi Fang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Chemistry, Zhejiang University, Hangzhou, 310058, China
- Institute of Microstructure Technology, Karlsruhe Institute of Technology, 76131, Karlsruhe, Germany
| | - Yuyan Zhang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Chemistry, Zhejiang University, Hangzhou, 310058, China
| | - Felix T Eickemeyer
- Laboratory of Photonics and Interfaces, Institute of Chemical Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH 1015, Switzerland
| | - Yi Yuan
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Chemistry, Zhejiang University, Hangzhou, 310058, China
| | - Shaik M Zakeeruddin
- Laboratory of Photonics and Interfaces, Institute of Chemical Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH 1015, Switzerland
| | - Michael Grätzel
- Laboratory of Photonics and Interfaces, Institute of Chemical Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH 1015, Switzerland
| | - Peng Wang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Chemistry, Zhejiang University, Hangzhou, 310058, China
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6
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Chen Z, Woltering SL, Limburg B, Tsang MY, Baugh J, Briggs GAD, Mol JA, Anderson HL, Thomas JO. Connections to the Electrodes Control the Transport Mechanism in Single-Molecule Transistors. Angew Chem Int Ed Engl 2024; 63:e202401323. [PMID: 38410064 DOI: 10.1002/anie.202401323] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/19/2024] [Revised: 02/23/2024] [Accepted: 02/26/2024] [Indexed: 02/28/2024]
Abstract
When designing a molecular electronic device for a specific function, it is necessary to control whether the charge-transport mechanism is phase-coherent transmission or particle-like hopping. Here we report a systematic study of charge transport through single zinc-porphyrin molecules embedded in graphene nanogaps to form transistors, and show that the transport mechanism depends on the chemistry of the molecule-electrode interfaces. We show that van der Waals interactions between molecular anchoring groups and graphene yield transport characteristic of Coulomb blockade with incoherent sequential hopping, whereas covalent molecule-electrode amide bonds give intermediately or strongly coupled single-molecule devices that display coherent transmission. These findings demonstrate the importance of interfacial engineering in molecular electronic circuits.
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Affiliation(s)
- Zhixin Chen
- Department of Materials, University of Oxford, 16 Parks Road, Oxford, OX1 3PH, UK
| | - Steffen L Woltering
- Department of Materials, University of Oxford, 16 Parks Road, Oxford, OX1 3PH, UK
- Department of Chemistry, University of Oxford Chemistry Research Laboratory, Oxford, OX1 3TA, UK
| | - Bart Limburg
- Department of Chemistry, University of Oxford Chemistry Research Laboratory, Oxford, OX1 3TA, UK
| | - Ming-Yee Tsang
- Department of Materials, University of Oxford, 16 Parks Road, Oxford, OX1 3PH, UK
| | - Jonathan Baugh
- Institute for Quantum Computing, University of Waterloo, 200 University Avenue West, N2 L 3G1, Waterloo, ON, Canada
| | - G Andrew D Briggs
- Department of Materials, University of Oxford, 16 Parks Road, Oxford, OX1 3PH, UK
| | - Jan A Mol
- School of Physical and Chemical Sciences, Queen Mary University of London, Mile End Road, London, E1 4NS, UK
| | - Harry L Anderson
- Department of Chemistry, University of Oxford Chemistry Research Laboratory, Oxford, OX1 3TA, UK
| | - James O Thomas
- Department of Materials, University of Oxford, 16 Parks Road, Oxford, OX1 3PH, UK
- School of Physical and Chemical Sciences, Queen Mary University of London, Mile End Road, London, E1 4NS, UK
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7
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Sun S, Zhang J, Zhang Q, Liu J. Manipulation of Charge Transport in MoS 2/MoTe 2 Field Effect Transistors and Heterostructure by Propagating the Surface Acoustic Wave. ACS Appl Mater Interfaces 2024. [PMID: 38605510 DOI: 10.1021/acsami.4c00663] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/13/2024]
Abstract
Two-dimensional (2D) materials with atomic-scale thickness are promising candidates to develop next-generation electronic and optoelectronic devices with multiple functions due to their widely tunable physical properties by various stimuli. The surface acoustic wave (SAW) produced at the surface of the piezoelectrical substrate can generate electrical and strain fields simultaneously with micro/nanometer resolution during propagation. It provides a stable and wireless platform to manipulate the rich and fascinating properties of 2D materials. However, the interaction mechanisms between the SAW and 2D materials remain unclear, preventing further development and potential applications of SAW-integrated 2D devices. This work studied the acoustoelectric (AE) charge transport mechanism in 2D materials thoroughly by characterizing the performances of the n-type MoS2 and p-type MoTe2 field effect transistors (FETs) and the MoS2/MoTe2 p-n junction driven by the SAW. As compared to the case driven by the static electrical field alone, the SAW drove the electron and hole transport along the same direction as its propagation, and the generated AE current always had the opposite direction to the AE voltage. In the device level, the 2D FETs showed a significantly reduced subthreshold swing up to around 67% when the SAW was used to drive the channel carriers, indicating that the SAW enhanced the on/off switching speed. Moreover, the MoTe2/MoS2 p-n junction showed a tunable photoresponsivity by the power and propagation direction of the SAW. These findings provide a solid foundation to promote future research and potential applications of SAW-driven multifunctional devices based on 2D materials.
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Affiliation(s)
- Shipeng Sun
- State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin 300072, China
| | - Jinxi Zhang
- State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin 300072, China
| | - Qiankun Zhang
- Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instruments, Beijing Information Science and Technology University, Beijing 100192, China
| | - Jing Liu
- State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin 300072, China
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8
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Zhang Y, Liang H, Qi P, Xu Z, Fei H, Guo C. Deciphering the Roles of Interfacial Amino Acids in Inter-Protein Charge Transport. Nano Lett 2024; 24:4178-4185. [PMID: 38552164 DOI: 10.1021/acs.nanolett.4c00164] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
Elucidating charge transport (CT) through proteins is critical for gaining insights into ubiquitous CT chain reactions in biological systems and developing high-performance bioelectronic devices. While intra-protein CT has been extensively studied, crucial knowledge about inter-protein CT via interfacial amino acids is still absent due to the structural complexity. Herein, by loading cytochrome c (Cyt c) on well-defined peptide self-assembled monolayers to mimic the protein-protein interface, we provide a precisely controlled platform for identifying the roles of interfacial amino acids in solid-state CT via peptide-Cyt c junctions. The terminal amino acid of peptides serves as a fine-tuning factor for both the interfacial interaction between peptides and Cyt c and the immobilized Cyt c orientation, resulting in a nearly 10-fold difference in current through peptide-Cyt c junctions with varied asymmetry. This work provides a valuable platform for studying CT across proteins and contributes to the understanding of fundamental principles governing inter-protein CT.
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Affiliation(s)
- Yongkang Zhang
- College of Chemistry and Molecular Sciences, Wuhan University, 299 Bayi Road, Wuhan, Hubei 430072, China
| | - Han Liang
- College of Chemistry and Molecular Sciences, Wuhan University, 299 Bayi Road, Wuhan, Hubei 430072, China
| | - Pan Qi
- College of Chemistry and Molecular Sciences, Wuhan University, 299 Bayi Road, Wuhan, Hubei 430072, China
| | - Zhongchen Xu
- College of Chemistry and Molecular Sciences, Wuhan University, 299 Bayi Road, Wuhan, Hubei 430072, China
| | - Houguo Fei
- College of Chemistry and Molecular Sciences, Wuhan University, 299 Bayi Road, Wuhan, Hubei 430072, China
| | - Cunlan Guo
- College of Chemistry and Molecular Sciences, Wuhan University, 299 Bayi Road, Wuhan, Hubei 430072, China
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9
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Parashar RK, Jash P, Zharnikov M, Mondal PC. Metal-organic Frameworks in Semiconductor Devices. Angew Chem Int Ed Engl 2024; 63:e202317413. [PMID: 38252076 DOI: 10.1002/anie.202317413] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/15/2023] [Revised: 01/16/2024] [Accepted: 01/22/2024] [Indexed: 01/23/2024]
Abstract
Metal-organic frameworks (MOFs) are a specific class of hybrid, crystalline, nano-porous materials made of metal-ion-based 'nodes' and organic linkers. Most of the studies on MOFs largely focused on porosity, chemical and structural diversity, gas sorption, sensing, drug delivery, catalysis, and separation applications. In contrast, much less reports paid attention to understanding and tuning the electrical properties of MOFs. Poor electrical conductivity of MOFs (~10-7-10-10 S cm-1), reported in earlier studies, impeded their applications in electronics, optoelectronics, and renewable energy storage. To overcome this drawback, the MOF community has adopted several intriguing strategies for electronic applications. The present review focuses on creatively designed bulk MOFs and surface-anchored MOFs (SURMOFs) with different metal nodes (from transition metals to lanthanides), ligand functionalities, and doping entities, allowing tuning and enhancement of electrical conductivity. Diverse platforms for MOFs-based electronic device fabrications, conductivity measurements, and underlying charge transport mechanisms are also addressed. Overall, the review highlights the pros and cons of MOFs-based electronics (MOFtronics), followed by an analysis of the future directions of research, including optimization of the MOF compositions, heterostructures, electrical contacts, device stacking, and further relevant options which can be of interest for MOF researchers and result in improved devices performance.
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Affiliation(s)
- Ranjeev Kumar Parashar
- Department of Chemistry, Indian Institute of Technology, Kanpur, Uttar Pradesh, 208016, India
| | - Priyajit Jash
- Department of Chemistry, Indian Institute of Technology, Kanpur, Uttar Pradesh, 208016, India
| | - Michael Zharnikov
- Angewandte Physikalische Chemie, Universität Heidelberg, Im Neuenheimer Feld 253, 69120, Heidelberg, Germany
| | - Prakash Chandra Mondal
- Department of Chemistry, Indian Institute of Technology, Kanpur, Uttar Pradesh, 208016, India
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10
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Šilhavík M, Kumar P, Levinský P, Zafar ZA, Hejtmánek J, Červenka J. Anderson Localization of Phonons in Thermally Superinsulating Graphene Aerogels with Metal-Like Electrical Conductivity. Small Methods 2024:e2301536. [PMID: 38577909 DOI: 10.1002/smtd.202301536] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/05/2023] [Revised: 03/24/2024] [Indexed: 04/06/2024]
Abstract
In the quest to improve energy efficiency and design better thermal insulators, various engineering strategies have been extensively investigated to minimize heat transfer through a material. Yet, the suppression of thermal transport in a material remains elusive because heat can be transferred by multiple energy carriers. Here, the realization of Anderson localization of phonons in a random 3D elastic network of graphene is reported. It is shown that thermal conductivity in a cellular graphene aerogel can be drastically reduced to 0.9 mW m-1 K-1 by the application of compressive strain while keeping a high metal-like electrical conductivity of 120 S m-1 and ampacity of 0.9 A. The experiments reveal that the strain can cause phonon localization over a broad compression range. The remaining heat flow in the material is dominated by charge transport. Conversely, electrical conductivity exhibits a gradual increase with increasing compressive strain, opposite to the thermal conductivity. These results imply that strain engineering provides the ability to independently tune charge and heat transport, establishing a new paradigm for controlling phonon and charge conduction in solids. This approach will enable the development of a new type of high-performance insulation solutions and thermally superinsulating materials with metal-like electrical conductivity.
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Affiliation(s)
- Martin Šilhavík
- Department of Thin Films and Nanostructures, FZU - Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10/112, Prague, 162 00, Czech Republic
| | - Prabhat Kumar
- Department of Thin Films and Nanostructures, FZU - Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10/112, Prague, 162 00, Czech Republic
| | - Petr Levinský
- Department of Magnetics and Superconductors, FZU - Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10/112, Prague, 162 00, Czech Republic
| | - Zahid Ali Zafar
- Department of Thin Films and Nanostructures, FZU - Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10/112, Prague, 162 00, Czech Republic
| | - Jiří Hejtmánek
- Department of Magnetics and Superconductors, FZU - Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10/112, Prague, 162 00, Czech Republic
| | - Jiří Červenka
- Department of Thin Films and Nanostructures, FZU - Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10/112, Prague, 162 00, Czech Republic
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11
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Wang S, Zhu W, Jacobs IE, Wood WA, Wang Z, Manikandan S, Andreasen JW, Un HI, Ursel S, Peralta S, Guan S, Grivel JC, Longuemart S, Sirringhaus H. Enhancing the Thermoelectric Properties of Conjugated Polymers by Suppressing Dopant-Induced Disorder. Adv Mater 2024:e2314062. [PMID: 38558210 DOI: 10.1002/adma.202314062] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2023] [Revised: 03/17/2024] [Indexed: 04/04/2024]
Abstract
Doping is a crucial strategy to enhance the performance of various organic electronic devices. However, in many cases, the random distribution of dopants in conjugated polymers leads to the disruption of the polymer microstructure, severely constraining the achievable performance of electronic devices. Here, it is shown that by ion-exchange doping polythiophene-based P[(3HT)1-x-stat-(T)x] (x = 0 (P1), 0.12 (P2), 0.24 (P3), and 0.36 (P4)), remarkably high electrical conductivity of >400 S cm-1 and power factor of >16 µW m-1 K-2 are achieved for the random copolymer P3, ranking it among highest ever reported for unaligned P3HT-based films, significantly higher than that of P1 (<40 S cm-1, <4 µW m-1 K-2). Although both polymers exhibit comparable field-effect transistor hole mobilities of ≈0.1 cm2 V-1 s-1 in the pristine state, after doping, Hall effect measurements indicate that P3 exhibits a large Hall mobility up to 1.2 cm2 V-1 s-1, significantly outperforming that of P1 (0.06 cm2 V-1 s-1). GIWAXS measurement determines that the in-plane π-π stacking distance of doped P3 is 3.44 Å, distinctly shorter than that of doped P1 (3.68 Å). These findings contribute to resolving the long-standing dopant-induced-disorder issues in P3HT and serve as an example for achieving fast charge transport in highly doped polymers for efficient electronics.
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Affiliation(s)
- Suhao Wang
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
- Unité de Dynamique et Structure des Matériaux Moléculaires, Université du Littoral Côte d'Opale, 145 Avenue Maurice Schumann, Dunkerque, 59140, France
| | - Wenjin Zhu
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Ian E Jacobs
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - William A Wood
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Zichen Wang
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Suraj Manikandan
- Department of Energy Conversion and Storage, Technical University of Denmark, Kongens Lyngby, 2800, Denmark
| | - Jens Wenzel Andreasen
- Department of Energy Conversion and Storage, Technical University of Denmark, Kongens Lyngby, 2800, Denmark
| | - Hio-Ieng Un
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Sarah Ursel
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Sébastien Peralta
- Laboratoire de Physicochimie des Polymères et des Interfaces, CY Cergy Paris Université, 5 Mail Gay Lussac, Neuville-sur-Oise, 95000, France
| | - Shaoliang Guan
- Maxwell Centre, Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, UK
| | - Jean-Claude Grivel
- Department of Energy Conversion and Storage, Technical University of Denmark, Kongens Lyngby, 2800, Denmark
| | - Stéphane Longuemart
- Unité de Dynamique et Structure des Matériaux Moléculaires, Université du Littoral Côte d'Opale, 145 Avenue Maurice Schumann, Dunkerque, 59140, France
| | - Henning Sirringhaus
- Optoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
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12
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Chen S, Al-Hilfi SH, Chen G, Zhang H, Zheng W, Virgilio LD, Geuchies JJ, Wang J, Feng X, Riedinger A, Bonn M, Wang HI. Tuning the Inter-Nanoplatelet Distance and Coupling Strength by Thermally Induced Ligand Decomposition. Small 2024; 20:e2308951. [PMID: 38010120 DOI: 10.1002/smll.202308951] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2023] [Indexed: 11/29/2023]
Abstract
CdSe nanoplatelets (NPLs) are promising 2D semiconductors for optoelectronic applications, in which efficient charge transport properties are desirable. It is reported that thermal annealing constitutes an effective strategy to control the optical absorption and electrical properties of CdSe NPLs by tuning the inter-NPL distance. Combining optical absorption, transmission electron microscopy, and thermogravimetric analysis, it is revealed that the thermal decomposition of ligands (e.g., cadmium myristate) governs the inter-NPL distance and thus the inter-NPL electronic coupling strength. Employing ultrafast terahertz spectroscopy, it is shown that this enhanced electronic coupling increases both the free carrier generation efficiency and the short-range mobility in NPL solids. The results show a straightforward method of controlling the interfacial electronic coupling strength for developing functional optoelectronic devices through thermal treatments.
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Affiliation(s)
- Shuai Chen
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Samir H Al-Hilfi
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Guangbo Chen
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, Mommsenstr. 4, 01062, Dresden, Germany
| | - Heng Zhang
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Wenhao Zheng
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Lucia Di Virgilio
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Jaco J Geuchies
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Junren Wang
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Xinliang Feng
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, Mommsenstr. 4, 01062, Dresden, Germany
- Max Planck Institute of Microstructure Physics, D-06120, Halle (Saale), Germany
| | - Andreas Riedinger
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Mischa Bonn
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Hai I Wang
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
- Nanophotonics, Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 1, Utrecht, 3584 CC, The Netherlands
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13
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Sachnik O, Ie Y, Ando N, Tan X, Blom PWM, Wetzelaer GJAH. Single-Layer Organic Light-Emitting Diode with Trap-Free Host Beats Power Efficiency and Lifetime of Multilayer Devices. Adv Mater 2024; 36:e2311892. [PMID: 38214416 DOI: 10.1002/adma.202311892] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2023] [Indexed: 01/13/2024]
Abstract
Organic light-emitting diodes (OLEDs) employing a single active layer potentially offer a number of benefits compared to multilayer devices; reduced number of materials and deposition steps, potential for solution processing, and reduced operating voltage due to the absence of heterojunctions. However, for single-layer OLEDs to achieve efficiencies approaching those of multilayer devices, balanced charge transport is a prerequisite. This requirement excludes many efficient emitters based on thermally activated delayed fluorescence (TADF) that exhibit electron trapping, such as the green-emitting bis(4-(9,9-dimethylacridin-10(9H)-yl)phenyl)methanone (DMAC-BP). By employing a recently developed trap-free large band gap material as a host for DMAC-BP, nearly balanced charge transport is achieved. The single-layer OLED reaches an external quantum efficiency (EQE) of 19.6%, which is comparable to the reported EQEs of 18.9-21% for multilayer devices, but achieves a record power efficiency for DMAC-BP OLEDs of 82 lm W-1, clearly surpassing the reported multilayer power efficiencies of 52.9-59 lm W-1. In addition, the operational stability is greatly improved compared to multilayer devices and the use of conventional host materials in combination with DMAC-BP as an emitter. Next to the obvious reduction in production costs, single-layer OLEDs therefore also offer the advantage of reduced energy consumption and enhanced stability.
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Affiliation(s)
- Oskar Sachnik
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Yutaka Ie
- Department of Soft Nanomaterials, Nanoscience and Nanotechnology Center, The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Osaka, Ibaraki, 567-0047, Japan
| | - Naoki Ando
- Department of Soft Nanomaterials, Nanoscience and Nanotechnology Center, The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Osaka, Ibaraki, 567-0047, Japan
| | - Xiao Tan
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Paul W M Blom
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
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14
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Brouillac C, McIntosh N, Heinrich B, Jeannin O, De Sagazan O, Coulon N, Rault‐Berthelot J, Cornil J, Jacques E, Quinton C, Poriel C. Grafting Electron-Accepting Fragments on [4]cyclo-2,7-carbazole Scaffold: Tuning the Structural and Electronic Properties of Nanohoops. Adv Sci (Weinh) 2024; 11:e2309115. [PMID: 38251412 PMCID: PMC10987112 DOI: 10.1002/advs.202309115] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2023] [Indexed: 01/23/2024]
Abstract
Since the first applications of nanohoops in organic electronics appear promising, the time has come to go deeper into their rational design in order to reach high-efficiency materials. To do so, systematic studies dealing with the incorporation of electron-rich and/or electron-poor functional units on nanohoops have to be performed. Herein, the synthesis, the electrochemical, photophysical, thermal, and structural properties of two [4]cyclo-2,7-carbazoles, [4]C-Py-Cbz, and [4]C-Pm-Cbz, possessing electron-withdrawing units on their nitrogen atoms (pyridine or pyrimidine) are reported. The synthesis of these nanohoops is first optimized and a high yield above 50% is reached. Through a structure-properties relationship study, it is shown that the substituent has a significant impact on some physicochemical properties (eg HOMO/LUMO levels) while others are kept unchanged (eg fluorescence). Incorporation in electronic devices shows that the most electrically efficient Organic Field-Effect transistors are obtained with [4]C-Py-Cbz although this compound does not present the best-organized semiconductor layer. These experimental data are finally confronted with the electronic couplings between the nanohoops determined at the DFT level and have highlighted the origin in the difference of charge transport properties. [4]C-Py-Cbz has the advantage of a more 2D-like transport character than [4]C-Pm-Cbz, which alleviates the impact of defects and structural organization.
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Affiliation(s)
| | - Nemo McIntosh
- Laboratory for Chemistry of Novel MaterialsUniversity of MonsMonsB‐7000Belgium
| | - Benoît Heinrich
- Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS)UMR 7504CNRS‐Université de Strasbourg23 rue du Loess, BP 43, Cedex 2Strasbourg67034France
| | | | | | | | | | - Jérôme Cornil
- Laboratory for Chemistry of Novel MaterialsUniversity of MonsMonsB‐7000Belgium
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15
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Zhang H, Liu Y, Ran G, Li H, Zhang W, Cheng P, Bo Z. Sequentially Processed Bulk-Heterojunction-Buried Structure for Efficient Organic Solar Cells with 500 nm Thickness. Adv Mater 2024:e2400521. [PMID: 38477468 DOI: 10.1002/adma.202400521] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/10/2024] [Revised: 03/03/2024] [Indexed: 03/14/2024]
Abstract
Large-area printing fabrication is a distinctive feature of organic solar cells (OSCs). However, the advance of upscalable fabrication is challenged by the thickness of organic active layers considering the importance of both exciton dissociation and charge collection. In this work, a bulk-heterojunction-buried (buried-BHJ) structure is introduced by sequential deposition to realize efficient exciton dissociation and charge collection, thereby contributing to efficient OSCs with 500 nm thick active layers. The buried-BHJ distributes donor and acceptor phases in the vertical direction as charge transport channels, while numerous BHJ interfaces are buried in each phase to facilitate exciton dissociation simultaneously. It is found that buried-BHJ configurations possess efficient exciton dissociation and rapid charge transport, resulting in reduced recombination losses. In comparison with traditional structures, the buried-BHJ structure displays a decent tolerance to film thickness. In particular, a power conversion efficiency of 16.0% is achieved with active layers at a thickness of 500 nm. To the best of the authors' knowledge, this represents the champion efficiency of thick film OSCs.
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Affiliation(s)
- Huarui Zhang
- College of Textiles and Clothing, State Key Laboratory of Bio-fibers and Eco-textiles, Qingdao University, Qingdao, 266071, China
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing, 100875, China
| | - Yuqiang Liu
- College of Textiles and Clothing, State Key Laboratory of Bio-fibers and Eco-textiles, Qingdao University, Qingdao, 266071, China
| | - Guangliu Ran
- Department of Physics and Applied Optics Beijing Area Major Laboratory, Center for Advanced Quantum Studies, Beijing Normal University, Beijing, 100875, China
| | - Hongxiang Li
- State Key Laboratory of Polymer Materials Engineering, College of Polymer Science and Engineering, Sichuan University, Chengdu, 610065, China
| | - Wenkai Zhang
- Department of Physics and Applied Optics Beijing Area Major Laboratory, Center for Advanced Quantum Studies, Beijing Normal University, Beijing, 100875, China
| | - Pei Cheng
- State Key Laboratory of Polymer Materials Engineering, College of Polymer Science and Engineering, Sichuan University, Chengdu, 610065, China
| | - Zhishan Bo
- College of Textiles and Clothing, State Key Laboratory of Bio-fibers and Eco-textiles, Qingdao University, Qingdao, 266071, China
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing, 100875, China
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16
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Colin-Molina A, Nematiaram T, Cheung AMH, Troisi A, Frisbie CD. The Conductance Isotope Effect in Oligophenylene Imine Molecular Wires Depends on the Number and Spacing of 13C-Labeled Phenylene Rings. ACS Nano 2024; 18:7444-7454. [PMID: 38411123 DOI: 10.1021/acsnano.3c11327] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/28/2024]
Abstract
We report a strong and structurally sensitive 13C intramolecular conductance isotope effect (CIE) for oligophenyleneimine (OPI) molecular wires connected to Au electrodes. Wires were built from Au surfaces beginning with the formation of 4-aminothiophenol self-assembled monolayers (SAMs) followed by subsequent condensation reactions with 13C-labeled terephthalaldehyde and phenylenediamine; in these monomers the phenylene rings were either completely 13C-labeled or the naturally abundant 12C isotopologues. Alternatively, perdeuterated versions of terephthalaldehyde and phenylenediamine were employed to make 2H(D)-labeled OPI wires. For 13C-isotopologues of short OPI wires (<4 nm) in length where the charge transport mechanism is tunneling, there was no measurable effect, i.e., 13C CIE ≈ 1, where CIE is defined as the ratio of labeled and unlabeled wire resistances, i.e., CIE = Rheavy/Rlight. However, for long OPI wires >4 nm, in which the transport mechanism is polaron hopping, a strong 13C CIE = 4-5 was observed. A much weaker inverse CIE < 1 was evident for the longest D-labeled wires. Importantly, the magnitude of the 13C CIE was sensitive to the number and spacing of 13C-labeled rings, i.e., the CIE was structurally sensitive. The structural sensitivity is intriguing because it may be employed to understand polaron hopping mechanisms and charge localization/delocalization in molecular wires. A preliminary theoretical analysis explored several possible explanations for the CIE, but so far a fully satisfactory explanation has not been identified. Nevertheless, the latest results unambiguously demonstrate structural sensitivity of the heavy atom CIE, offering directions for further utilization of this interesting effect.
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Affiliation(s)
- Abraham Colin-Molina
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Tahereh Nematiaram
- Department of Pure and Applied Chemistry, University of Strathclyde, Glasgow G11XL, United Kingdom
| | - Andy Man Hong Cheung
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Alessandro Troisi
- Department of Chemistry, University of Liverpool, Liverpool L697ZD, United Kingdom
| | - C Daniel Frisbie
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
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17
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Chen Z, Zhang S, Ren J, Zhang T, Dai J, Wang J, Ma L, Qiao J, Hao X, Hou J. Molecular Design for Vertical Phase Distribution Modulation in High-Performance Organic Solar Cells. Adv Mater 2024:e2310390. [PMID: 38433157 DOI: 10.1002/adma.202310390] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2023] [Revised: 02/23/2024] [Indexed: 03/05/2024]
Abstract
Component distribution within the photoactive layer dictates the morphology and electronic structure and substantially influences the performance of organic solar cells (OSCs). In this study, a molecular design strategy is introduced to manipulate component and energetics distribution by adjusting side-chain polarity. Two non-fullerene acceptors (NFAs), ITIC-16F and ITIC-E, are synthesized by introducing different polar functional substituents onto the side chains of ITIC. The alterations result in different distribution tendencies in the bulk heterojunction film: ITIC-16F with intensified hydrophobicity aligns predominantly with the top surface, while ITIC-E with strong hydrophilicity gravitates toward the bottom. This divergence directly impacts the vertical distribution of the excitation energy levels, thereby influencing the excitation kinetics over extended time periods and larger spatial ranges including enhanced diffusion-mediated exciton dissociation and stimulated charge carrier transport. Benefitting from the favorable energy distribution, the device incorporating ITIC-E into the PBQx-TF:eC9-2Cl blend showcases an impressive power conversion efficiency of 19.4%. This work highlights side-chain polarity manipulation as a promising strategy for designing efficient NFA molecules and underscores the pivotal role of spatial energetics distribution in OSC performance.
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Affiliation(s)
- Zhihao Chen
- State Key Laboratory of Polymer Physics and Chemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Shaoqing Zhang
- State Key Laboratory of Polymer Physics and Chemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemistry and Biology Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Junzhen Ren
- State Key Laboratory of Polymer Physics and Chemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Tao Zhang
- State Key Laboratory of Polymer Physics and Chemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jiangbo Dai
- State Key Laboratory of Polymer Physics and Chemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jingwen Wang
- State Key Laboratory of Polymer Physics and Chemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Lijiao Ma
- State Key Laboratory of Polymer Physics and Chemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jiawei Qiao
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong, 250100, P. R. China
| | - Xiaotao Hao
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong, 250100, P. R. China
| | - Jianhui Hou
- State Key Laboratory of Polymer Physics and Chemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemistry and Biology Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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18
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Li Y, Li R, Jia Z, Yu B, Yang Y, Bai S, Pollard M, Liu Y, Ma Y, Kampwerth H, Lin Q. Precursor Engineering of Solution-Processed Sb 2 S 3 Solar Cells. Small 2024; 20:e2308895. [PMID: 37875777 DOI: 10.1002/smll.202308895] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2023] [Indexed: 10/26/2023]
Abstract
Antimony-based chalcogenides have emerged as promising candidates for next-generation thin film photovoltaics. Particularly, binary Sb2 S3 thin films have exhibited great potential for optoelectronic applications, due to the facile and low-cost fabrication, simple composition, decent charge transport and superior stability. However, most of the reported efficient Sb2 S3 solar cells are realized based on chemical bath deposition and hydrothermal methods, which require large amount of solution and are normally very time-consuming. In this work, Ag ions are introduced within the Sb2 S3 sol-gel precursors, and effectively modulated the crystallization and charge transport properties of Sb2 S3 . The crystallinity of the Sb2 S3 crystal grains are enhanced and the charge carrier mobility is increased, which resulted improved charge collection efficiency and reduced charge recombination losses, reflected by the greatly improved fill factor and open-circuit voltage of the Ag incorporated Sb2 S3 solar cells. The champion devices reached a record high power conversion efficiency of 7.73% (with antireflection coating), which is comparable with the best photovoltaic performance of Sb2 S3 solar cells achieved based on chemical bath deposition and hydrothermal techniques, and pave the great avenue for next-generation solution-processed photovoltaics.
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Affiliation(s)
- Yanyan Li
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, Hubei, 430072, China
| | - Ruiming Li
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, Hubei, 430072, China
| | - Zhenglin Jia
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, Hubei, 430072, China
| | - Bin Yu
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, Hubei, 430072, China
| | - Yujie Yang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, Hubei, 430072, China
| | - Songxue Bai
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, Hubei, 430072, China
| | - Michael Pollard
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales, NSW 205, Australia
| | - Yong Liu
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, Hubei, 430072, China
| | - Ye Ma
- Core Facility of Wuhan University, Wuhan University, Wuhan, Hubei, 430072, China
| | - Henner Kampwerth
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales, NSW 205, Australia
| | - Qianqian Lin
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, Hubei, 430072, China
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19
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Park J, Jang JG, Kang K, Kim SH, Kwak J. High Thermoelectric Performance in Solution-Processed Semicrystalline PEDOT:PSS Films by Strong Acid-Base Treatment: Limitations and Potential. Adv Sci (Weinh) 2024; 11:e2308368. [PMID: 38236169 PMCID: PMC10933597 DOI: 10.1002/advs.202308368] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2023] [Revised: 01/06/2024] [Indexed: 01/19/2024]
Abstract
Thermoelectric (TE) generation with solution-processable conducting polymers offers substantial potential in low-temperature energy harvesting based on high tunability in materials, processes, and form-factors. However, manipulating the TE and charge transport properties accompanies structural and energetic disorders, restricting the enhancement of thermoelectric power factor (PF). Here, solution-based strong acid-base treatment techniques are introduced to modulate the doping level of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin films with preserving its molecular orientation, enabling to achieve a remarkably high PF of 534.5 µW m-1 K-2 . Interestingly, theoretical modeling suggested that further de-doping can increase the PF beyond the experimental value. However, it is impossible to reach this value experimentally, even without any degradation of PEDOT crystallinity. Uncovering the underlying reason for the limitation, an analysis of the relationship among the microstructure-thermoelectric performance-charge transport property revealed that inter-domain connectivity via tie-chains and the resultant percolation for transport are crucial factors in achieving high TE performance, as in charge transport. It is believed that the methods and fundamental understandings in this work would contribute to the exploitation of conducting polymer-based low-temperature energy harvesting.
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Affiliation(s)
- Juhyung Park
- Department of Electrical and Computer EngineeringInter‐University Semiconductor Research CenterSoft Foundry InstituteSeoul National UniversitySeoul08826Republic of Korea
| | - Jae Gyu Jang
- Department of Carbon Convergence EngineeringWonkwang UniversityIksan54538Republic of Korea
| | - Keehoon Kang
- Department of Materials Science and EngineeringResearch Institute of Advanced MaterialsInstitute of Applied PhysicsSeoul National UniversitySeoul08826Republic of Korea
| | - Sung Hyun Kim
- Department of Carbon Convergence EngineeringWonkwang UniversityIksan54538Republic of Korea
| | - Jeonghun Kwak
- Department of Electrical and Computer EngineeringInter‐University Semiconductor Research CenterSoft Foundry InstituteSeoul National UniversitySeoul08826Republic of Korea
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20
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Yao F, Dong K, Ke W, Fang G. Micro/Nano Perovskite Materials for Advanced X-ray Detection and Imaging. ACS Nano 2024; 18:6095-6110. [PMID: 38372495 DOI: 10.1021/acsnano.3c10116] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/20/2024]
Abstract
Halide perovskites have emerged as highly promising materials for ionizing radiation detection due to their exceptional characteristics, including a large mobility-lifetime product, strong stopping power, tunable band gap, and cost-effective crystal growth via solution processes. Semiconductor-type X-ray detectors employing various micro/nano perovskite materials have shown impressive progress in achieving heightened sensitivity and lower detection limits. Here, we present a comprehensive review of the applications of micro/nano perovskite materials for direct type X-ray detection, with a focus on the requirements for micro/nano crystal assembly and device properties in advanced X-ray detectors. We explore diverse processing techniques and optoelectronic considerations applied to perovskite X-ray detectors. Additionally, this review highlights the challenges and promising opportunities for perovskite X-ray detector arrays in real-world applications, potentially necessitating further research efforts.
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Affiliation(s)
- Fang Yao
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
- School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan 430200, People's Republic of China
| | - Kailian Dong
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
- Shenzhen Institute, Wuhan University, Shenzhen 518055, Guangdong, People's Republic of China
| | - Weijun Ke
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
- Shenzhen Institute, Wuhan University, Shenzhen 518055, Guangdong, People's Republic of China
| | - Guojia Fang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
- School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan 430200, People's Republic of China
- Shenzhen Institute, Wuhan University, Shenzhen 518055, Guangdong, People's Republic of China
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21
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Vello TP, Albano LGS, Dos Santos TC, Colletti JC, Santos Batista CV, Leme VFC, Dos Santos TC, Miguel MPDC, de Camargo DHS, Bof Bufon CC. Electrical Conductivity Boost: In Situ Polypyrrole Polymerization in Monolithically Integrated Surface-Supported Metal-Organic Framework Templates. Small 2024; 20:e2305501. [PMID: 37752688 DOI: 10.1002/smll.202305501] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/03/2023] [Revised: 08/21/2023] [Indexed: 09/28/2023]
Abstract
Recent progress in synthesizing and integrating surface-supported metal-organic frameworks (SURMOFs) has highlighted their potential in developing hybrid electronic devices with exceptional mechanical flexibility, film processability, and cost-effectiveness. However, the low electrical conductivity of SURMOFs has limited their use in devices. To address this, researchers have utilized the porosity of SURMOFs to enhance electrical conductivity by incorporating conductive materials. This study introduces a method to improve the electrical conductivity of HKUST-1 templates by in situ polymerization of conductive polypyrrole (PPy) chains within the SURMOF pores (named as PPy@HKUST-1). Nanomembrane-origami technology is employed for integration, allowing a rolled-up metallic nanomembrane to contact the HKUST-1 films without causing damage. After a 24 h loading period, the electrical conductivity at room temperature reaches approximately 5.10-6 S m-1 . The nanomembrane-based contact enables reliable electrical characterization even at low temperatures. Key parameters of PPy@HKUST-1 films, such as trap barrier height, dielectric constant, and tunneling barrier height, are determined using established conduction mechanisms. These findings represent a significant advancement in real-time control of SURMOF conductivity, opening pathways for innovative electronic-optoelectronic device development. This study demonstrates the potential of SURMOFs to revolutionize hybrid electronic devices by enhancing electrical conductivity through intelligent integration strategies.
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Affiliation(s)
- Tatiana Parra Vello
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-970, Brazil
- Department of Physical Chemistry, Institute of Chemistry (IQ), University of Campinas (UNICAMP), Campinas, São Paulo, 13083-862, Brazil
| | - Luiz Gustavo Simão Albano
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-970, Brazil
| | - Thamiris Cescon Dos Santos
- Postgraduate Program in Materials Science and Technology (POSMAT), São Paulo State University (UNESP), Bauru, São Paulo, 17033-360, Brazil
| | - Julia Cantovitz Colletti
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-970, Brazil
| | - Carlos Vinícius Santos Batista
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-970, Brazil
- Postgraduate Program in Materials Science and Technology (POSMAT), São Paulo State University (UNESP), Bauru, São Paulo, 17033-360, Brazil
| | - Vitória Fernandes Cintra Leme
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-970, Brazil
| | - Thamiris Costa Dos Santos
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-970, Brazil
| | - Maria Paula Dias Carneiro Miguel
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-970, Brazil
| | - Davi Henrique Starnini de Camargo
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-970, Brazil
| | - Carlos César Bof Bufon
- Department of Physical Chemistry, Institute of Chemistry (IQ), University of Campinas (UNICAMP), Campinas, São Paulo, 13083-862, Brazil
- Postgraduate Program in Materials Science and Technology (POSMAT), São Paulo State University (UNESP), Bauru, São Paulo, 17033-360, Brazil
- Mackenzie Evangelical Faculty of Paraná (FEMPAR), Curitiba, Paraná, 80730-000, Brazil
- Mackenzie Presbyterian Institute (IPM), São Paulo, São Paulo, 01302-907, Brazil
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22
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He B, Kuang K, Tong G, Tang J, Cao S, Yu Z, Li M, He Y, Chen J. Halide Ordering Enables Superior Charge Transport in 3D (NMPDA)Pb 2 I 4 Br 2 Perovskitoid Single Crystal. Small 2024; 20:e2305990. [PMID: 37821401 DOI: 10.1002/smll.202305990] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Revised: 09/09/2023] [Indexed: 10/13/2023]
Abstract
Halide composition engineering has been demonstrated as an effective strategy for optical and electronic properties modulation in 3D perovskites. While the impact of halide mixing on the structural and charge transport properties of 3D perovskitoids remains largely unexplored. Herein, it is demonstrated that bromine (Br) mixing in 3D (NMPDA)Pb2 I6 (NMPDA = N-methyl-1,3-propane diammonium) perovskitoid yields stabilized (NMPDA)Pb2 I4 Br2 with specific ordered halide sites, where Br ions locate at the edge-sharing sites. The halide ordered structure enables stronger H-bonds, shorter interlayer distance, and lower octahedra distortion in (NMPDA)Pb2 I4 Br2 with respect to the pristine (NMPDA)Pb2 I6 . These attributes further result in high ion migration activation energy, low defect states density, and enhanced carrier mobility-lifetime product (µτ), as underpinned by the electrical properties investigation and DFT calculations. Remarkably, the parallel configured photodetector based on (NMPDA)Pb2 I4 Br2 single crystal delivers a high on/off current ratio of 3.92 × 103 , a satisfying photoresponsivity and detectivity of 0.28 A W-1 and 3.05 × 1012 Jones under 10.94 µW cm-2 irradiation, superior to that of (NMPDA)Pb2 I6 and the reported 3D perovskitoids. This work sheds novel insight on exploring 3D mixed halide perovskitoids toward advanced and stable optoelectronic devices.
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Affiliation(s)
- Biqi He
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
| | - Kuan Kuang
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
| | - Guoliang Tong
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
| | - Junjie Tang
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
| | - Sheng Cao
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
| | - Zixian Yu
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
| | - Mingkai Li
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
| | - Yunbin He
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
| | - Junnian Chen
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
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23
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Yang X, Cui J, Lin L, Bian A, Dai J, Du W, Guo S, Hu J, Xu X. Enhanced Charge Separation in Nanoporous BiVO4 by External Electron Transport Layer Boosts Solar Water Splitting. Adv Sci (Weinh) 2024; 11:e2305567. [PMID: 38059797 PMCID: PMC10837342 DOI: 10.1002/advs.202305567] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2023] [Revised: 11/10/2023] [Indexed: 12/08/2023]
Abstract
The optimization of charge transport with electron-hole separation directed toward specific redox reactions is a crucial mission for artificial photosynthesis. Bismuth vanadate (BiVO4 , BVO) is a popular photoanode material for solar water splitting, but it faces tricky challenges in poor charge separation due to its modest charge transport properties. Here, a concept of the external electron transport layer (ETL) is first proposed and demonstrated its effectiveness in suppressing the charge recombination both in bulk and at surface. Specifically, a conformal carbon capsulation applied on BVO enables a remarkable increase in the charge separation efficiency, thanks to its critical roles in passivating surface charge-trapping sites and building external conductance channels. Through decorated with an oxygen evolution catalyst to accelerate surface charge transfer, the carbon-encased BVO (BVO@C) photoanode manifests durable water splitting over 120 h with a high current density of 5.9 mA cm-2 at 1.23 V versus the reversible hydrogen electrode (RHE) under 1 sun irradiation (100 mW cm-2 , AM 1.5 G), which is an activity-stability trade-off record for single BVO light absorber. This work opens up a new avenue to steer charge separation via external ETL for solar fuel conversion.
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Affiliation(s)
- Xiaotian Yang
- College of Physics Science and Technology, and Interdisciplinary Research CenterYangzhou UniversityYangzhou225002China
| | - Jianpeng Cui
- College of Physics Science and Technology, and Interdisciplinary Research CenterYangzhou UniversityYangzhou225002China
| | - Luxue Lin
- College of Physics Science and Technology, and Interdisciplinary Research CenterYangzhou UniversityYangzhou225002China
| | - Ang Bian
- School of ScienceJiangsu University of Science and TechnologyZhenjiang212100China
| | - Jun Dai
- School of ScienceJiangsu University of Science and TechnologyZhenjiang212100China
| | - Wei Du
- College of Physics Science and Technology, and Interdisciplinary Research CenterYangzhou UniversityYangzhou225002China
| | - Shiying Guo
- College of Physics Science and Technology, and Interdisciplinary Research CenterYangzhou UniversityYangzhou225002China
| | - Jingguo Hu
- College of Physics Science and Technology, and Interdisciplinary Research CenterYangzhou UniversityYangzhou225002China
| | - Xiaoyong Xu
- College of Physics Science and Technology, and Interdisciplinary Research CenterYangzhou UniversityYangzhou225002China
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24
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Li Z, Wu C, Chen L, Wang Y, Mutulu Z, Uehara H, Zhou J, Cakmak M, Ramprasad R, Cao Y. Probing Electronic Band Structures of Dielectric Polymers via Pre-Breakdown Conduction. Adv Mater 2024:e2310497. [PMID: 38215240 DOI: 10.1002/adma.202310497] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2023] [Revised: 01/06/2024] [Indexed: 01/14/2024]
Abstract
The electronic band structure, especially the defect states at the conduction band tail, dominates electron transport and electrical degradation of a dielectric material under an extremely high electric field. However, the electronic band structure in a dielectric is barely well studied due to experimental challenges in detecting the electrical conduction to an extremely high electric field, i.e., prebreakdown. In this work, the electronic band structure of polymer dielectric films is probed through an in situ prebreakdown conduction measurement method in conjunction with a space-charge-limited-current spectroscopic analysis. An exponential distribution of defect states at the conduction band tail with varying trap levels is observed in accordance with the specific morphological disorder in the polymer dielectric, and the experimental defect states show also a favorable agreement with the calculated density of states from the density functional theory. The methodology demonstrated in this work bridges the molecule-structure-determined electronic band structure and the macro electrical conduction behavior with a highly improved understanding of material properties that control the electrical breakdown, and paves a way for guiding the modification of existing material and the exploration of novel materials for high electric field applications.
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Affiliation(s)
- Zongze Li
- Electrical Insulation Research Center, University of Connecticut, 97 N Eagleville Rd, Storrs, CT, 06269, USA
- Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Storrs, CT, 06269, USA
| | - Chao Wu
- Electrical Insulation Research Center, University of Connecticut, 97 N Eagleville Rd, Storrs, CT, 06269, USA
- Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Storrs, CT, 06269, USA
- Department of Electrical Engineering, Tsinghua University, Beijing, 100084, China
| | - Lihua Chen
- School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive NW, Atlanta, GA, 30332, USA
| | - Yifei Wang
- Electrical Insulation Research Center, University of Connecticut, 97 N Eagleville Rd, Storrs, CT, 06269, USA
- Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Storrs, CT, 06269, USA
| | - Zeynep Mutulu
- Departments of Materials Engineering and Mechanical Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Hiroaki Uehara
- Department of Electrical Engineering, Kanto Gakuin University, 1-50-1 Mutsuura-higashi, Kanazawa-ku, Yokohama, 236-8501, Japan
| | - Jierui Zhou
- Electrical Insulation Research Center, University of Connecticut, 97 N Eagleville Rd, Storrs, CT, 06269, USA
- Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Storrs, CT, 06269, USA
| | - Miko Cakmak
- Departments of Materials Engineering and Mechanical Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Rampi Ramprasad
- School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive NW, Atlanta, GA, 30332, USA
| | - Yang Cao
- Electrical Insulation Research Center, University of Connecticut, 97 N Eagleville Rd, Storrs, CT, 06269, USA
- Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Storrs, CT, 06269, USA
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25
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Dong X, Wang R, Gao Y, Ling Q, Hu Z, Chen M, Liu H, Liu Y. Orbital Interactions in 2D Dion-Jacobson Perovskites Using Oligothiophene-Based Semiconductor Spacers Enable Efficient Solar Cells. Nano Lett 2024; 24:261-269. [PMID: 38113224 DOI: 10.1021/acs.nanolett.3c03887] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
2D Dion-Jacobson (DJ) perovskites have emerged as promising photovoltaic materials, but the insulating organic spacer has hindered the efficient charge transport. Herein, we successfully synthesized a terthiophene-based semiconductor spacer, namely, 3ThDMA, for 2D DJ perovskite. An interesting finding is that the energy levels of 3ThDMA extensively overlap with the inorganic components and directly contribute to the band formation of (3ThDMA)PbI4, leading to enhanced charge transport across the organic spacer layers, whereas no such orbital interactions were found in (UDA)PbI4, a DJ perovskite based on 1,11-undecanediaminum (UDA). The devices based on (3ThDMA)MAn-1PbnI3n+1 (nominal n = 5) obtained a champion efficiency of 15.25%, which is a record efficiency for 2D DJ perovskite solar cells using long-conjugated spacers (conjugated rings ≥ 3) and a 22.60% efficiency for 3ThDMA-treated 3D PSCs. Our findings provide an important insight into understanding the orbital interactions in 2D DJ perovskite using an organic semiconductor spacer for efficient solar cells.
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Affiliation(s)
- Xiyue Dong
- The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry, Nankai University, Tianjin 300071, China
| | - Rui Wang
- The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry, Nankai University, Tianjin 300071, China
| | - Yuping Gao
- The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry, Nankai University, Tianjin 300071, China
| | - Qin Ling
- Department of Microelectronic Science and Engineering, Ningbo University, Ningbo 315211, China
| | - Ziyang Hu
- Department of Microelectronic Science and Engineering, Ningbo University, Ningbo 315211, China
| | - Mingqian Chen
- The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry, Nankai University, Tianjin 300071, China
| | - Hang Liu
- The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry, Nankai University, Tianjin 300071, China
| | - Yongsheng Liu
- The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry, Nankai University, Tianjin 300071, China
- Renewable Energy Conversion and Storage Center (RECAST), Nankai University, Tianjin 300071, China
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26
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Ahlawat M, Neelakshi, Ramapanicker R, Govind Rao V. Enhancing Photocatalytic Attributes of Perovskite Nanocrystals in Aqueous Media via Ligand Engineering. ACS Appl Mater Interfaces 2024; 16:623-632. [PMID: 38112532 DOI: 10.1021/acsami.3c14321] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
The remarkable catalytic potential of perovskite nanocrystals (NCs) remains underutilized due to their limited stability in polar media, resulting from the vulnerability of their structure to disruption by polar solvents. In this study, we address this challenge by employing the bolaamphiphilic NKE-12 ligand, which features multiple denticities to effectively shield the surface of CsPbBr3 NCs from polar solvent interactions without compromising their light-harvesting properties. Our research, utilizing electrochemical impedance and photocurrent response measurements, highlights efficient charge separation and charge transfer enabled by NKE-12 ligands, which feature multiple ionic groups and peptide bonds, compared to conventional oleylamine/oleic acid ligands on CsPbBr3 NCs. Through the utilization of purely ligand-derived water-dispersed CsPbBr3/NKE-12 NCs, we successfully showcased their photocatalytic activity for acrylamide polymerization. A series of control experiments unveil a radical-based reaction pathway and suggest the synergistic involvement of photogenerated electrons and holes in producing the O2·- and OH· free radicals, respectively. Our findings emphasize the crucial role of ligand engineering in stabilizing perovskites in water and harnessing their exceptional photocatalytic attributes. This study opens new avenues for applying perovskite NCs in various catalytic processes in polar media.
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Affiliation(s)
- Monika Ahlawat
- Department of Chemistry, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh 208016, India
| | - Neelakshi
- Department of Chemistry, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh 208016, India
| | - Ramesh Ramapanicker
- Department of Chemistry, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh 208016, India
| | - Vishal Govind Rao
- Department of Chemistry, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh 208016, India
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27
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Li K, Tang R, Zhu C, Chen T. Critical Review on Crystal Orientation Engineering of Antimony Chalcogenide Thin Film for Solar Cell Applications. Adv Sci (Weinh) 2024; 11:e2304963. [PMID: 37939308 PMCID: PMC10787070 DOI: 10.1002/advs.202304963] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Revised: 09/16/2023] [Indexed: 11/10/2023]
Abstract
The emerging antimony chalcogenide (Sb2 (Sx Se1-x )3 , 0 ≤ x ≤ 1) semiconductors are featured as quasi-1D structures comprising (Sb4 S(e)6 )n ribbons, this structural characteristic generates facet-dependent properties such as directional charge transfer and trap states. In terms of carrier transport, proper control over the crystal nucleation and growth conditions can promote preferentially oriented growth of favorable crystal planes, thus enabling efficient electron transport along (Sb4 S(e)6 )n ribbons. Furthermore, an in-depth understanding of the origin and impact of the crystal orientation of Sb2 (Sx Se1-x )3 films on the performance of corresponding photovoltaic devices is expected to lead to a breakthrough in power conversion efficiency. In fact, there are many studies on the orientation control of Sb2 (Sx Se1-x )3 colloidal nanomaterials. However, the synthesis of Sb2 (Sx Se1-x )3 thin films with controlled facets has recently been a focus in optoelectronic device applications. This work summarizes methodologies that are applied in the fabrication of preferentially oriented Sb2 (Sx Se1-x )3 films, including treatment strategies developed for crystal orientation engineering in each process. The mechanisms in the orientation control are thoroughly analyzed. An outlook on perspectives for the future development of Sb2 (Sx Se1-x )3 solar cells based on recent research and issues on orientation control is finally provided.
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Affiliation(s)
- Ke Li
- Hefei National Research Center for Physical Sciences at the Microscale, CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
- Institute of Energy, Hefei Comprehensive National Science Center, Hefei, 230041, P. R. China
| | - Rongfeng Tang
- Hefei National Research Center for Physical Sciences at the Microscale, CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
- Institute of Energy, Hefei Comprehensive National Science Center, Hefei, 230041, P. R. China
| | - Changfei Zhu
- Hefei National Research Center for Physical Sciences at the Microscale, CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
- Institute of Energy, Hefei Comprehensive National Science Center, Hefei, 230041, P. R. China
| | - Tao Chen
- Hefei National Research Center for Physical Sciences at the Microscale, CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
- Institute of Energy, Hefei Comprehensive National Science Center, Hefei, 230041, P. R. China
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28
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Wang R, Lyu H, Poon Ho GSH, Chen H, Yuan Y, Bang KT, Kim Y. Highly Conductive Covalent-Organic Framework Films. Small 2024; 20:e2306634. [PMID: 37702138 DOI: 10.1002/smll.202306634] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2023] [Revised: 08/31/2023] [Indexed: 09/14/2023]
Abstract
Chemically inert organic networks exhibiting electrical conductivity comparable to metals can advance organic electronics, catalysis, and energy storage systems. Covalent-organic frameworks (COFs) have emerged as promising materials for those applications due to their high crystallinity, porosity, and tunable functionality. However, their low conductivity has limited their practical utilization. In this study, copper-coordinated-fluorinated-phthalocyanine and 2,3,6,7-tetrahydroxy-9,10-anthraquinone-based COF (CuPc-AQ-COF) films with ultrahigh conductivity are developed. The COF films exhibit an electrical conductivity of 1.53 × 103 S m-1 and a Hall mobility of 6.02 × 102 cm2 V-1 s-1 at 298 K, reaching the level of metals. The films are constructed by linking phthalocyanines and anthraquinones through vapor-assisted synthesis. The high conductivity properties of the films are attributed to the molecular design of the CuPc-AQ-COFs and the generation of high-quality crystals via the vapor-assisted method. Density functional theory analysis reveals that an efficient donor-acceptor system between the copper-coordinated phthalocyanines and anthraquinones significantly promotes charge transfer. Overall, the CuPc-AQ-COF films set new records of COF conductivity and mobility and represent a significant step forward in the development of COFs for electronic, catalytic, and electrochemical applications.
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Affiliation(s)
- Rui Wang
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Hong Kong SAR, 999077, China
| | - Hang Lyu
- Department of Chemistry, The Hong Kong University of Science and Technology, Hong Kong SAR, 999077, China
| | - Gerald Siu Hang Poon Ho
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Hong Kong SAR, 999077, China
| | - Huanhuan Chen
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Hong Kong SAR, 999077, China
| | - Yufei Yuan
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Hong Kong SAR, 999077, China
| | - Ki-Taek Bang
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Hong Kong SAR, 999077, China
| | - Yoonseob Kim
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Hong Kong SAR, 999077, China
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29
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Wang C, Cusin L, Ma C, Unsal E, Wang H, Consolaro VG, Montes-García V, Han B, Vitale S, Dianat A, Croy A, Zhang H, Gutierrez R, Cuniberti G, Liu Z, Chi L, Ciesielski A, Samorì P. Enhancing the Carrier Transport in Monolayer MoS 2 through Interlayer Coupling with 2D Covalent Organic Frameworks. Adv Mater 2024; 36:e2305882. [PMID: 37690084 DOI: 10.1002/adma.202305882] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/18/2023] [Revised: 08/23/2023] [Indexed: 09/12/2023]
Abstract
The coupling of different 2D materials (2DMs) to form van der Waals heterostructures (vdWHs) is a powerful strategy for adjusting the electronic properties of 2D semiconductors, for applications in opto-electronics and quantum computing. 2D molybdenum disulfide (MoS2 ) represents an archetypical semiconducting, monolayer thick versatile platform for the generation of hybrid vdWH with tunable charge transport characteristics through its interfacing with molecules and assemblies thereof. However, the physisorption of (macro)molecules on 2D MoS2 yields hybrids possessing a limited thermal stability, thereby jeopardizing their technological applications. Herein, the rational design and optimized synthesis of 2D covalent organic frameworks (2D-COFs) for the generation of MoS2 /2D-COF vdWHs exhibiting strong interlayer coupling effects are reported. The high crystallinity of the 2D-COF films makes it possible to engineer an ultrastable periodic doping effect on MoS2 , boosting devices' field-effect mobility at room temperature. Such a performance increase can be attributed to the synergistic effect of the efficient interfacial electron transfer process and the pronounced suppression of MoS2 's lattice vibration. This proof-of-concept work validates an unprecedented approach for the efficient modulation of the electronic properties of 2D transition metal dichalcogenides toward high-performance (opto)electronics for CMOS digital circuits.
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Affiliation(s)
- Can Wang
- State Key Laboratory of Supramolecular Structure and Materials, Jilin University, Changchun, 130012, P. R. China
- Institut de Science et d'Ingénierie Supramoléculaires (ISIS), Université de Strasbourg & CNRS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Luca Cusin
- Institut de Science et d'Ingénierie Supramoléculaires (ISIS), Université de Strasbourg & CNRS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Chun Ma
- Institut de Science et d'Ingénierie Supramoléculaires (ISIS), Université de Strasbourg & CNRS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Elif Unsal
- Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden, 01062, Dresden, Germany
| | - Hanlin Wang
- Institut de Science et d'Ingénierie Supramoléculaires (ISIS), Université de Strasbourg & CNRS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | | | - Verónica Montes-García
- Institut de Science et d'Ingénierie Supramoléculaires (ISIS), Université de Strasbourg & CNRS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Bin Han
- Institut de Science et d'Ingénierie Supramoléculaires (ISIS), Université de Strasbourg & CNRS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Stefania Vitale
- Institut de Science et d'Ingénierie Supramoléculaires (ISIS), Université de Strasbourg & CNRS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Arezoo Dianat
- Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden, 01062, Dresden, Germany
| | - Alexander Croy
- Institute of Physical Chemistry, Friedrich Schiller University Jena, 07737, Jena, Germany
| | - Haiming Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon Based Functional Materials & Devices, Soochow University, Suzhou, 215123, P. R. China
| | - Rafael Gutierrez
- Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden, 01062, Dresden, Germany
| | - Gianaurelio Cuniberti
- Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden, 01062, Dresden, Germany
- Dresden Center for Computational Materials Science (DCMS), TU Dresden, 01062, Dresden, Germany
| | - Zhaoyang Liu
- State Key Laboratory of Supramolecular Structure and Materials, Jilin University, Changchun, 130012, P. R. China
| | - Lifeng Chi
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon Based Functional Materials & Devices, Soochow University, Suzhou, 215123, P. R. China
| | - Artur Ciesielski
- Institut de Science et d'Ingénierie Supramoléculaires (ISIS), Université de Strasbourg & CNRS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Paolo Samorì
- Institut de Science et d'Ingénierie Supramoléculaires (ISIS), Université de Strasbourg & CNRS, 8 allée Gaspard Monge, Strasbourg, 67000, France
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30
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Zang X, Xiong S, Jiang S, Li D, Wu H, Ren H, Cao A, Li B, Ma Z, Chen J, Ding L, Tang J, Sun Z, Chu J, Bao Q. Passivating Dipole Layer Bridged 3D/2D Perovskite Heterojunction for Highly Efficient and Stable p-i-n Solar Cells. Adv Mater 2023:e2309991. [PMID: 38154115 DOI: 10.1002/adma.202309991] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/26/2023] [Revised: 12/02/2023] [Indexed: 12/30/2023]
Abstract
Constructing 3D/2D perovskite heterojunction is a promising approach to integrate the benefits of high efficiency and superior stability in perovskite solar cells (PSCs). However, in contrast to n-i-p architectural PSCs, the p-i-n PSCs with 3D/2D heterojunction have serious limitations in achieving high-performance as they suffer from a large energetic mismatch and electron extraction energy barrier from a 3D perovskite layer to a 2D perovskite layer, and serious nonradiative recombination at the heterojunction. Here a strategy of incorporating a thin passivating dipole layer (PDL) onto 3D perovskite and then depositing 2D perovskite without dissolving the underlying layer to form an efficient 3D/PDL/2D heterojunction is developed. It is revealed that PDL regulates the energy level alignment with the appearance of interfacial dipole and strongly interacts with 3D perovskite through covalent bonds, which eliminate the energetic mismatch, reduce the surface defects, suppress the nonradiative recombination, and thus accelerate the charge extraction at such electron-selective contact. As a result, it is reported that the 3D/PDL/2D junction p-i-n PSCs present a power conversion efficiency of 24.85% with robust stability, which is comparable to the state-of-the-art efficiency of the 3D/2D junction n-i-p devices.
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Affiliation(s)
- Xiaoxiao Zang
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Shaobing Xiong
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Sheng Jiang
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Di Li
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Hongbo Wu
- Center for Advanced Low-Dimension Materials, Donghua University, Shanghai, 201620, China
| | - Hao Ren
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, China
| | - Aiping Cao
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Bo Li
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Zaifei Ma
- Center for Advanced Low-Dimension Materials, Donghua University, Shanghai, 201620, China
| | - Jinde Chen
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, China
| | - Liming Ding
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Jianxin Tang
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, China
| | - Zhenrong Sun
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
| | - Junhao Chu
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Qinye Bao
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
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Banerjee S, Rodrigues M, Ballester M, Vija AH, Katsaggelos A. Identifying Defects without a priori Knowledge in a Room-Temperature Semiconductor Detector Using Physics Inspired Machine Learning Model. Sensors (Basel) 2023; 24:92. [PMID: 38202954 PMCID: PMC10781357 DOI: 10.3390/s24010092] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/11/2023] [Revised: 12/16/2023] [Accepted: 12/20/2023] [Indexed: 01/12/2024]
Abstract
Room-temperature semiconductor radiation detectors (RTSD) such as CdZnTe are popular in Computed Tomography (CT) imaging and other applications. Transport properties and material defects with respect to electron and hole transport often need to be characterized, which is a labor intensive process. However, these defects often vary from one RTSD to another and are not known a priori during characterization of the material. In recent years, physics-inspired machine learning (PI-ML) models have been developed for the RTSDs which have the ability to characterize the defects in a RTSD by discretizing it volumetrically. These learning models capture the heterogeneity of the defects in the RTSD-which arises due to the fabrication process and the energy bands of elements in the RTSD. In those models, the different defects of RTSD-trapping, detrapping and recombination for electrons and holes-are present. However, these defects are often unknown. In this work, we show the capabilities of a PI-ML model which has been developed considering all the material defects to identify certain defects which are present (or absent). Additionally, these models can identify the defects over the volume of the RTSD in a discretized manner.
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Affiliation(s)
- Srutarshi Banerjee
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208, USA; (M.B.); (A.K.)
| | - Miesher Rodrigues
- Siemens Medical Solutions USA, Inc., Hoffmann Estates, IL 60192, USA; (M.R.); (A.H.V.)
| | - Manuel Ballester
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208, USA; (M.B.); (A.K.)
| | - Alexander Hans Vija
- Siemens Medical Solutions USA, Inc., Hoffmann Estates, IL 60192, USA; (M.R.); (A.H.V.)
| | - Aggelos Katsaggelos
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208, USA; (M.B.); (A.K.)
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32
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Leitonas K, Vigante B, Volyniuk D, Bucinskas A, Dimitrijevs P, Lapcinska S, Arsenyan P, Grazulevicius JV. Aromatic systems with two and three pyridine-2,6-dicarbazolyl-3,5-dicarbonitrile fragments as electron-transporting organic semiconductors exhibiting long-lived emissions. Beilstein J Org Chem 2023; 19:1867-1880. [PMID: 38116244 PMCID: PMC10729123 DOI: 10.3762/bjoc.19.139] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/25/2023] [Accepted: 10/18/2023] [Indexed: 12/21/2023] Open
Abstract
The pyridine-3,5-dicarbonitrile moiety has gained significant attention in the field of materials chemistry, particularly in the development of heavy-metal-free pure organic light-emitting diodes (OLEDs). Extensive research on organic compounds exhibiting thermally activated delayed fluorescence (TADF) has led to numerous patents and research articles. This study focuses on the synthesis and investigation of the semiconducting properties of polyaromatic π-systems containing two and three fragments of pyridine-2,6-dicarbazolyl-3,5-dicarbonitrile. The compounds are synthesized by Sonogashira coupling reactions and characterized by steady-state and time-resolved luminescence spectroscopy. The compounds show efficient intramolecular charge transfer (ICT) from the donor to the acceptor. The photoluminescence (PL) spectra of the solutions of the compounds showed non-structured emission peaks in the visible region, which are attributed to ICT emission. The PL intensities of the solutions of the compounds are enhanced after deoxygenation, which is indicative of TADF. The photoluminescence quantum yields and TADF properties of the compounds are sensitive to the medium. Cyclic voltammetry measurements indicate good hole-blocking and electron-injecting properties due to their high ionization potentials. Photoelectron spectroscopy and time-of-flight measurements reveal good electron-transporting properties for one of the compounds. In general, polyaromatic π-systems with pyridine-3,5-dicarbonitrile fragments demonstrate promising potential for use in organic electronic devices, such as OLEDs.
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Affiliation(s)
- Karolis Leitonas
- Department of Polymer Chemistry and Technology, Kaunas University of Technology, Radvilenu pl. 19, LT-50254, Kaunas, Lithuania
| | - Brigita Vigante
- Latvian Institute of Organic Synthesis, Aizkraukles 21, LV-1006, Riga, Latvia
| | - Dmytro Volyniuk
- Department of Polymer Chemistry and Technology, Kaunas University of Technology, Radvilenu pl. 19, LT-50254, Kaunas, Lithuania
| | - Audrius Bucinskas
- Department of Polymer Chemistry and Technology, Kaunas University of Technology, Radvilenu pl. 19, LT-50254, Kaunas, Lithuania
| | - Pavels Dimitrijevs
- Latvian Institute of Organic Synthesis, Aizkraukles 21, LV-1006, Riga, Latvia
| | - Sindija Lapcinska
- Latvian Institute of Organic Synthesis, Aizkraukles 21, LV-1006, Riga, Latvia
| | - Pavel Arsenyan
- Latvian Institute of Organic Synthesis, Aizkraukles 21, LV-1006, Riga, Latvia
| | - Juozas Vidas Grazulevicius
- Department of Polymer Chemistry and Technology, Kaunas University of Technology, Radvilenu pl. 19, LT-50254, Kaunas, Lithuania
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33
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Gupta R, Bhandari S, Kaya S, Katin KP, Mondal PC. Thickness-Dependent Charge Transport in Three Dimensional Ru(II)- Tris(phenanthroline)-Based Molecular Assemblies. Nano Lett 2023. [PMID: 38048073 DOI: 10.1021/acs.nanolett.3c03256] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/05/2023]
Abstract
We describe here the fabrication of large-area molecular junctions with a configuration of ITO/[Ru(Phen)3]/Al to understand temperature- and thickness-dependent charge transport phenomena. Thanks to the electrochemical technique, thin layers of electroactive ruthenium(II)-tris(phenanthroline) [Ru(Phen)3] with thicknesses of 4-16 nm are covalently grown on sputtering-deposited patterned ITO electrodes. The bias-induced molecular junctions exhibit symmetric current-voltage (j-V) curves, demonstrating highly efficient long-range charge transport and weak attenuation with increased molecular film thickness (β = 0.70 to 0.79 nm-1). Such a lower β value is attributed to the accessibility of Ru(Phen)3 molecular conduction channels to Fermi levels of both the electrodes and a strong electronic coupling at ITO-molecules interfaces. The thinner junctions (d = 3.9 nm) follow charge transport via resonant tunneling, while the thicker junctions (d = 10-16 nm) follow thermally activated (activation energy, Ea ∼ 43 meV) Poole-Frenkel charge conduction, showing a clear "molecular signature" in the nanometric junctions.
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Affiliation(s)
- Ritu Gupta
- Department of Chemistry, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh 208016, India
| | - Shapath Bhandari
- Department of Chemistry, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh 208016, India
| | - Savas Kaya
- Department of Pharmacy, Faculty of Science, Cumhuriyet University, Sivas 58140, Turkey
| | - Konstantin P Katin
- Institute of Nanotechnologies in Electronics, Spintronics and Photonics, National Research Nuclear University "MEPhI", Moscow 115409, Russia
| | - Prakash Chandra Mondal
- Department of Chemistry, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh 208016, India
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34
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Sullivan RP, Morningstar JT, Castellanos-Trejo E, Welker ME, Jurchescu OD. The Stark Effect: A Tool for the Design of High-Performance Molecular Rectifiers. Nano Lett 2023. [PMID: 37974048 DOI: 10.1021/acs.nanolett.3c03068] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/19/2023]
Abstract
Molecular electronic devices offer a path to the miniaturization of electronic circuits and could potentially facilitate novel functionalities that can be embedded into the molecular structure. Given their nanoscale dimensions, device properties are strongly influenced by quantum effects, yet many of these phenomena have been largely overlooked. We investigated the mechanism responsible for current rectification in molecular diodes and found that efficient rectification is achieved by enhancing the Stark effect strength and enabling a large number of molecules to participate in transport. These findings provided insights into the operation of molecular rectifiers and guided the development of high-performance devices via the design of molecules containing polarizable aromatic rings. Our results are consistent for different molecular structures and are expected to have broad applicability to all molecular devices by answering key questions related to charge transport mechanisms in such systems.
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Affiliation(s)
- Ryan P Sullivan
- Department of Physics and Center for Functional Materials, Wake Forest University, Winston-Salem, North Carolina 27109, United States
| | - John T Morningstar
- Department of Chemistry and Center for Functional Materials, Wake Forest University, Winston-Salem, North Carolina 27109, United States
| | - Eduardo Castellanos-Trejo
- Department of Physics and Center for Functional Materials, Wake Forest University, Winston-Salem, North Carolina 27109, United States
| | - Mark E Welker
- Department of Chemistry and Center for Functional Materials, Wake Forest University, Winston-Salem, North Carolina 27109, United States
| | - Oana D Jurchescu
- Department of Physics and Center for Functional Materials, Wake Forest University, Winston-Salem, North Carolina 27109, United States
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35
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Willis J, Claes R, Zhou Q, Giantomassi M, Rignanese GM, Hautier G, Scanlon DO. Limits to Hole Mobility and Doping in Copper Iodide. Chem Mater 2023; 35:8995-9006. [PMID: 38027540 PMCID: PMC10653089 DOI: 10.1021/acs.chemmater.3c01628] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Revised: 10/09/2023] [Accepted: 10/09/2023] [Indexed: 12/01/2023]
Abstract
Over one hundred years have passed since the discovery of the p-type transparent conducting material copper iodide, predating the concept of the "electron-hole" itself. Supercentenarian status notwithstanding, little is understood about the charge transport mechanisms in CuI. Herein, a variety of modeling techniques are used to investigate the charge transport properties of CuI, and limitations to the hole mobility over experimentally achievable carrier concentrations are discussed. Poor dielectric response is responsible for extensive scattering from ionized impurities at degenerately doped carrier concentrations, while phonon scattering is found to dominate at lower carrier concentrations. A phonon-limited hole mobility of 162 cm2 V-1 s-1 is predicted at room temperature. The simulated charge transport properties for CuI are compared to existing experimental data, and the implications for future device performance are discussed. In addition to charge transport calculations, the defect chemistry of CuI is investigated with hybrid functionals, revealing that reasonably localized holes from the copper vacancy are the predominant source of charge carriers. The chalcogens S and Se are investigated as extrinsic dopants, where it is found that despite relatively low defect formation energies, they are unlikely to act as efficient electron acceptors due to the strong localization of holes and subsequent deep transition levels.
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Affiliation(s)
- Joe Willis
- Department
of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.
- Thomas
Young Centre, University College London, Gower Street, London WC1E 6BT, U.K.
| | - Romain Claes
- UCLouvain,
Institute of Condensed Matter and Nanosciences (IMCN), Chemin des Étoiles 8, Louvain-la-Neuve B-1348, Belgium
| | - Qi Zhou
- Department
of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.
- Thomas
Young Centre, University College London, Gower Street, London WC1E 6BT, U.K.
| | - Matteo Giantomassi
- UCLouvain,
Institute of Condensed Matter and Nanosciences (IMCN), Chemin des Étoiles 8, Louvain-la-Neuve B-1348, Belgium
| | - Gian-Marco Rignanese
- UCLouvain,
Institute of Condensed Matter and Nanosciences (IMCN), Chemin des Étoiles 8, Louvain-la-Neuve B-1348, Belgium
| | - Geoffroy Hautier
- UCLouvain,
Institute of Condensed Matter and Nanosciences (IMCN), Chemin des Étoiles 8, Louvain-la-Neuve B-1348, Belgium
- Thayer
School of Engineering, Dartmouth College, Hanover, New Hampshire 03755, United States
| | - David O. Scanlon
- Department
of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.
- Thomas
Young Centre, University College London, Gower Street, London WC1E 6BT, U.K.
- School
of Chemistry, University of Birmingham, Edgbaston, Birmingham B15 2TT, U.K.
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36
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Zeng X, Yan C, Wang Q, Cao J, Fu X, Yang S, Chen Y, Pan L, Li W, Yang W. High Curvature PEDOT:PSS Transport Layer Toward Enhanced Perovskite Light-Emitting Diodes. Small 2023; 19:e2304411. [PMID: 37491785 DOI: 10.1002/smll.202304411] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/26/2023] [Revised: 07/16/2023] [Indexed: 07/27/2023]
Abstract
The rapidly developed metal halide perovskite light-emitting diodes (PeLEDs) are considered as a promising candidate for next-generation display and illumination, but the unbalanced charge transport is still a hard-treat case to restrict its efficiency and operational stability. Here, a high curvature PEDOT:PSS transport layer is demonstrated via the self-assembly island-like structures by the incorporation of alkali metal salts. Benefiting from the dielectric confinement effect of the high curvature surface, the modified CsPbBr3 -based PeLEDs present a 2.1 times peak external quantum efficiency (EQE) from 6.75% to 14.23% and a 3.3 times half lifetime (T50 ) from 3.96 to 13.01 h. Besides, the PeLEDs show high luminance up to 44834 cd m-2 . Evidently, this work may provide a deep insight into the structure-activity relationship between the micro-structures at the PEDOT:PSS/perovskite interface and the performance of PeLEDs, and crack the codes for ameliorating the performance of PeLEDs via interfacial micro-structured regulation.
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Affiliation(s)
- Xiankan Zeng
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031, P. R. China
| | - Cheng Yan
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031, P. R. China
| | - Qungui Wang
- College of Physics, Sichuan University, Chengdu, 610065, P. R. China
| | - Jingjing Cao
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031, P. R. China
| | - Xuehai Fu
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031, P. R. China
| | - Shiyu Yang
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031, P. R. China
| | - Yongjian Chen
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031, P. R. China
| | - Lunyao Pan
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031, P. R. China
| | - Wen Li
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031, P. R. China
| | - Weiqing Yang
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031, P. R. China
- Research Institute of Frontier Science, Southwest Jiaotong University, Chengdu, 610031, P. R. China
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37
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Yi Y, Hai F, Guo J, Gao X, Chen W, Tian X, Tang W, Hua W, Li M. Electrochemical Enhancement of Lithium-Ion Diffusion in Polypyrrole-Modified Sulfurized Polyacrylonitrile Nanotubes for Solid-to-Solid Free-Standing Lithium-Sulfur Cathodes. Small 2023; 19:e2303781. [PMID: 37544919 DOI: 10.1002/smll.202303781] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2023] [Revised: 07/17/2023] [Indexed: 08/08/2023]
Abstract
The energy density of lithium-sulfurized polyacrylonitrile (Li-SPAN) batteries has chronically suffered from low sulfur content. Although a free-standing electrode can significantly reduce noncapacity mass contribution, the slow bulk reaction kinetics still constrain the electrochemical performance. In this regard, a novel electrochemically active additive, polypyrrole (PPy), is introduced to construct PAN nanotubes as a sulfur carrier. This hollow channel greatly facilitates charge transport within the electrode and increases the sulfur content. Both electrochemical tests and simulations show that the SPANPPy-1% cathode possesses a larger lithium-ion diffusion coefficient and a more homogeneous phase interface than the SPAN cathode. Consequently, significantly improved capabilities and rate properties are achieved, as well as decent exportations under high-sulfur-loading or lean-electrolyte conditions. In-situ and semi-situ characterizations are further performed to demonstrate the nucleation growth of lithium sulfide and the evolution of the electrode surface structure. This type of electrochemically active additive provides a well-supported implementation of high-energy-density Li-S batteries.
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Affiliation(s)
- Yikun Yi
- Shaanxi Key Laboratory of Energy Chemical Process Intensification, School of Chemical Engineering and Technology, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, Shannxi, 710049, China
| | - Feng Hai
- Shaanxi Key Laboratory of Energy Chemical Process Intensification, School of Chemical Engineering and Technology, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, Shannxi, 710049, China
| | - Jingyu Guo
- Shaanxi Key Laboratory of Energy Chemical Process Intensification, School of Chemical Engineering and Technology, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, Shannxi, 710049, China
| | - Xin Gao
- Shaanxi Key Laboratory of Energy Chemical Process Intensification, School of Chemical Engineering and Technology, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, Shannxi, 710049, China
| | - Wenting Chen
- Shaanxi Key Laboratory of Energy Chemical Process Intensification, School of Chemical Engineering and Technology, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, Shannxi, 710049, China
| | - Xiaolu Tian
- Shaanxi Key Laboratory of Energy Chemical Process Intensification, School of Chemical Engineering and Technology, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, Shannxi, 710049, China
| | - Wei Tang
- Shaanxi Key Laboratory of Energy Chemical Process Intensification, School of Chemical Engineering and Technology, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, Shannxi, 710049, China
| | - Weibo Hua
- Shaanxi Key Laboratory of Energy Chemical Process Intensification, School of Chemical Engineering and Technology, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, Shannxi, 710049, China
| | - Mingtao Li
- Shaanxi Key Laboratory of Energy Chemical Process Intensification, School of Chemical Engineering and Technology, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, Shannxi, 710049, China
- Xi'an Jiaotong University Suzhou Institute, No. 99 Renai Road, Suzhou Industrial Park, Jiang Su, 215000, China
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38
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Mansour A, Warren R, Lungwitz D, Forster M, Scherf U, Opitz A, Malischewski M, Koch N. Coordination of Tetracyanoquinodimethane-Derivatives with Tris(pentafluorophenyl)borane Provides Stronger p-Dopants with Enhanced Stability. ACS Appl Mater Interfaces 2023; 15:46148-46156. [PMID: 37730205 PMCID: PMC10561139 DOI: 10.1021/acsami.3c10373] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Accepted: 08/18/2023] [Indexed: 09/22/2023]
Abstract
Strong molecular dopants for organic semiconductors that are stable against diffusion are in demand, enhancing the performance of organic optoelectronic devices. The conventionally used p-dopants based on 7,7,8,8-tetracyanoquinodimethane (TCNQ) and its derivatives "FxTCN(N)Q", such as 2,3,4,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) and 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (F6TCNNQ), feature limited oxidation strength, especially for modern polymer semiconductors with high ionization energy (IE). These small molecular dopants also exhibit pronounced diffusion in the polymer hosts. Here, we demonstrate a facile approach to increase the oxidation strength of FxTCN(N)Q by coordination with four tris(pentafluorophenyl)borane (BCF) molecules using a single-step solution mixing process, resulting in bulky dopant complexes "FxTCN(N)Q-4(BCF)". Using a series of polymer semiconductors with IE up to 5.9 eV, we show by optical absorption spectroscopy of solutions and thin films that the efficiency of doping using FxTCN(N)Q-4(BCF) is significantly higher compared to that using FxTCN(N)Q or BCF alone. Electrical transport measurements with the prototypical poly(3-hexylthiophene-2,5-diyl) (P3HT) confirm the higher doping efficiency of F4TCNQ-4(BCF) compared to F4TCNQ. Additionally, the bulkier structure of F4TCNQ-4(BCF) is shown to result in higher stability against drift in P3HT under an applied electric field as compared to F4TCNQ. The simple approach of solution-mixing of readily accessible molecules thus offers access to enhanced molecular p-dopants for the community.
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Affiliation(s)
- Ahmed
E. Mansour
- Helmholtz-Zentrum
Berlin für Materialien und Energie GmbH, 12489 Berlin, Germany
- Institut
für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
| | - Ross Warren
- Institut
für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
| | - Dominique Lungwitz
- Institut
für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
| | - Michael Forster
- Department
of Chemistry and Wuppertal Center for Smart Materials and Systems
(CM@S), Bergische Universität Wuppertal, 42097 Wuppertal, Germany
| | - Ullrich Scherf
- Department
of Chemistry and Wuppertal Center for Smart Materials and Systems
(CM@S), Bergische Universität Wuppertal, 42097 Wuppertal, Germany
| | - Andreas Opitz
- Institut
für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
| | - Moritz Malischewski
- Institute
of Chemistry and Biochemistry, Freie Universität
Berlin, 14195 Berlin, Germany
| | - Norbert Koch
- Helmholtz-Zentrum
Berlin für Materialien und Energie GmbH, 12489 Berlin, Germany
- Institut
für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
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Boschi A, Kovtun A, Liscio F, Xia Z, Kim KH, Avila SL, De Simone S, Mussi V, Barone C, Pagano S, Gobbi M, Samorì P, Affronte M, Candini A, Palermo V, Liscio A. Mesoscopic 3D Charge Transport in Solution-Processed Graphene-Based Thin Films: A Multiscale Analysis. Small 2023; 19:e2303238. [PMID: 37330652 DOI: 10.1002/smll.202303238] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2023] [Revised: 06/05/2023] [Indexed: 06/19/2023]
Abstract
Graphene and related 2D material (GRM) thin films consist of 3D assembly of billions of 2D nanosheets randomly distributed and interacting via van der Waals forces. Their complexity and the multiscale nature yield a wide variety of electrical characteristics ranging from doped semiconductor to glassy metals depending on the crystalline quality of the nanosheets, their specific structural organization ant the operating temperature. Here, the charge transport (CT) mechanisms are studied that are occurring in GRM thin films near the metal-insulator transition (MIT) highlighting the role of defect density and local arrangement of the nanosheets. Two prototypical nanosheet types are compared, i.e., 2D reduced graphene oxide and few-layer-thick electrochemically exfoliated graphene flakes, forming thin films with comparable composition, morphology and room temperature conductivity, but different defect density and crystallinity. By investigating their structure, morphology, and the dependence of their electrical conductivity on temperature, noise and magnetic-field, a general model is developed describing the multiscale nature of CT in GRM thin films in terms of hopping among mesoscopic bricks, i.e., grains. The results suggest a general approach to describe disordered van der Waals thin films.
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Affiliation(s)
- Alex Boschi
- Consiglio Nazionale delle Ricerche, Istituto per la Sintesi Organica e la Fotoreattività, (CNR-ISOF), via Gobetti 101, Bologna, 40129, Italy
- Istituto Italiano di Tecnologia, IIT - CNI, Laboratorio NEST, piazza S. Silvestro 12, Pisa, 56127, Italy
| | - Alessandro Kovtun
- Consiglio Nazionale delle Ricerche, Istituto per la Sintesi Organica e la Fotoreattività, (CNR-ISOF), via Gobetti 101, Bologna, 40129, Italy
| | - Fabiola Liscio
- Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi, (CNR-IMM) - Bologna Unit, via Gobetti 101, Bologna, 40129, Italy
| | - Zhenyuan Xia
- Consiglio Nazionale delle Ricerche, Istituto per la Sintesi Organica e la Fotoreattività, (CNR-ISOF), via Gobetti 101, Bologna, 40129, Italy
- Chalmers University of Technology, Department of Industrial and Materials Science, Kemivägen 9, Gothenburg, 41296, Sweden
| | - Kyung Ho Kim
- Chalmers University of Technology, Department of Microtechnology and Nanoscience, Kemivägen 9, Gothenburg, 41296, Sweden
- Physics Department, Royal Holloway, University of London, Egham, Surrey, TW20 0EX, UK
| | - Samuel Lara Avila
- Chalmers University of Technology, Department of Microtechnology and Nanoscience, Kemivägen 9, Gothenburg, 41296, Sweden
| | - Sara De Simone
- Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi, (CNR-IMM) - Roma Unit, via del Fosso del Cavaliere 100, Roma, 00133, Italy
- Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi, (CNR-IMM) - Lecce Unit, SP Lecce-Monteroni km 1,200, Lecce, 73100, Italy
| | - Valentina Mussi
- Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi, (CNR-IMM) - Roma Unit, via del Fosso del Cavaliere 100, Roma, 00133, Italy
| | - Carlo Barone
- Dipartimento di Fisica "E.R. Caianiello", Università degli Studi di Salerno, Via Giovanni Paolo II 132, Fisciano, SA, 84084, Italy
- CNR-SPIN Salerno and INFN Gruppo Collegato di Salerno, c/o Università degli Studi di Salerno, Fisciano, SA, 84084, Italy
| | - Sergio Pagano
- Dipartimento di Fisica "E.R. Caianiello", Università degli Studi di Salerno, Via Giovanni Paolo II 132, Fisciano, SA, 84084, Italy
- CNR-SPIN Salerno and INFN Gruppo Collegato di Salerno, c/o Università degli Studi di Salerno, Fisciano, SA, 84084, Italy
| | - Marco Gobbi
- CIC nanoGUNE, Tolosa Hiribidea 76, Donostia - San Sebastian, E-20018, Spain
| | - Paolo Samorì
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Marco Affronte
- Dipartimento di Scienze Fisiche, Informatiche e Matematiche (FIM), via Giuseppe Campi 213/a, Modena, 41125, Italy
| | - Andrea Candini
- Consiglio Nazionale delle Ricerche, Istituto per la Sintesi Organica e la Fotoreattività, (CNR-ISOF), via Gobetti 101, Bologna, 40129, Italy
| | - Vincenzo Palermo
- Consiglio Nazionale delle Ricerche, Istituto per la Sintesi Organica e la Fotoreattività, (CNR-ISOF), via Gobetti 101, Bologna, 40129, Italy
| | - Andrea Liscio
- Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi, (CNR-IMM) - Roma Unit, via del Fosso del Cavaliere 100, Roma, 00133, Italy
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40
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Paulin JV, Bayram S, Graeff CFO, Bufon CCB. Exploring the Charge Transport of a Natural Eumelanin for Sustainable Technologies. ACS Appl Bio Mater 2023; 6:3633-3637. [PMID: 37676251 DOI: 10.1021/acsabm.3c00469] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/08/2023]
Abstract
Eumelanin, the main quinone-based biomaterial of the melanin family of compounds, is emerging as a model for medical and sustainable electronic interfaces due to its biocompatibility, biodegradability, and transducing abilities. The study utilizes current-voltage measurements and impedance/dielectric spectroscopy under a controlled hydration atmosphere to investigate the charge transport of eumelanin produced from the S. parvus BSB49 strain. We show no differences in the electrical response in highly hydrated conditions compared to the standard synthetic eumelanin. Hence, our findings provide the groundwork to assess the potential use of this natural eumelanin in sustainable organic (bio)electronic applications.
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Affiliation(s)
- João V Paulin
- School of Sciences, Department of Physics and Meteorology, São Paulo State University (UNESP), Bauru, SP 17033-360, Brazil
| | - Sinan Bayram
- Department of Medical Services and Techniques, Vocational School of Health Services, Bayburt University, 69000 Bayburt, Turkey
| | - Carlos F O Graeff
- School of Sciences, Department of Physics and Meteorology, São Paulo State University (UNESP), Bauru, SP 17033-360, Brazil
- School of Sciences, Postgraduate Program in Materials Science and Technology (POSMAT), São Paulo State University (UNESP), Bauru, SP 17033-360, Brazil
| | - Carlos C B Bufon
- School of Sciences, Postgraduate Program in Materials Science and Technology (POSMAT), São Paulo State University (UNESP), Bauru, SP 17033-360, Brazil
- Mackenzie Evangelical Faculty of Paraná, Curitiba, PR 80730-000, Brazil
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Doan UTT, Le DK, Huynh TL, Ngo TT, Vo TQ, Thi MTT, Pham ATT, Tran VC, Nguyen PT, Pham NK. Tuned Transport Path of Perovskite MAPbI 3 -based Memristor Structure. Chemphyschem 2023; 24:e202300210. [PMID: 37394623 DOI: 10.1002/cphc.202300210] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/24/2023] [Revised: 06/29/2023] [Accepted: 06/30/2023] [Indexed: 07/04/2023]
Abstract
In this study, the features of resistive random access memory (RRAM) employing a straightforward Cr/MAPbI3 /FTO three-layer structure have been examined and clarified. The device displays various resistance switching (RS) behavior at various sweep voltages between 0.5 and 5 V. The RS effect has a conversion in the direction of the SET and RESET processes during sweeping for a number of cycles at a specific voltage. The directional change of the RS processes corresponds to the dominant transition between the generation/recombination of iodide ion and vacancy in the MAPbI3 perovskite layer and the electrochemical metallization of the Cr electrode under the influence of an electric field, which results in the conductive filament (CF) formation/rupture. At each stage, these processes are controlled by specific charge conduction mechanisms, including Ohmic conduction, space-charge-limited conduction (SCLC), and variable-range hopping (VRH). By identifying the biased voltage and the quantity of voltage sweep cycles, one can take a new approach to control or modulate the pathways for effective charge transport. This new approach is made possible by an understanding of the RS characteristics and the corresponding mechanisms causing the variation of RS behavior in the structure.
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Affiliation(s)
- Uyen Tu Thi Doan
- Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City, 70000, Vietnam
- Vietnam National University, Ho Chi Minh City, 70000, Vietnam
- Laboratory of Advanced Materials, University of Science, Ho Chi Minh City, 70000, Vietnam
| | - Duy Khanh Le
- Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City, 70000, Vietnam
- Vietnam National University, Ho Chi Minh City, 70000, Vietnam
| | - Truong Lam Huynh
- Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City, 70000, Vietnam
- Vietnam National University, Ho Chi Minh City, 70000, Vietnam
| | - Tung Thanh Ngo
- Vietnam National University, Ho Chi Minh City, 70000, Vietnam
- Faculty of Chemistry, University of Science, Ho Chi Minh City, 70000, Vietnam
| | - Trieu Quang Vo
- Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City, 70000, Vietnam
- Vietnam National University, Ho Chi Minh City, 70000, Vietnam
| | - Minh Thu Tran Thi
- Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City, 70000, Vietnam
- Vietnam National University, Ho Chi Minh City, 70000, Vietnam
| | - Anh Tuan Thanh Pham
- Vietnam National University, Ho Chi Minh City, 70000, Vietnam
- Laboratory of Advanced Materials, University of Science, Ho Chi Minh City, 70000, Vietnam
| | - Vinh Cao Tran
- Vietnam National University, Ho Chi Minh City, 70000, Vietnam
- Laboratory of Advanced Materials, University of Science, Ho Chi Minh City, 70000, Vietnam
| | - Phuong Tuyet Nguyen
- Vietnam National University, Ho Chi Minh City, 70000, Vietnam
- Faculty of Chemistry, University of Science, Ho Chi Minh City, 70000, Vietnam
| | - Ngoc Kim Pham
- Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City, 70000, Vietnam
- Vietnam National University, Ho Chi Minh City, 70000, Vietnam
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Carrasco I, Ehni P, Ebert M, Dumait N, Taupier G, Amela-Cortes M, Roiland C, Cordier S, Knöller JA, Jacques E, Laschat S, Molard Y. Game of Crowns: Na + Is Coming! Red NIR-Emissive Hybrid Liquid Crystals Containing Discotic Crown Ethers and Na 2Mo 6X 8iCl 6 (X i = Cl or Br). ACS Appl Mater Interfaces 2023; 15:39752-39764. [PMID: 37566407 DOI: 10.1021/acsami.3c08441] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/12/2023]
Abstract
Molecular or supramolecular materials that can self-organize into columns such as discotic liquid crystals are of interest for several applications in the field of optoelectronics. We show in this work that red near-infrared (NIR)-emissive metal cluster compounds of general formula Na2Mo6X8iCl6 (Xi = Cl or Br) can be readily complexed with discotic liquid crystals containing a crown ether. Three cavity sizes have been tested with crown ethers bearing 4, 5, or 6 oxygen atoms. In all cases, 1:1 complexes were formed, thanks to the well-known supramolecular interactions existing between the Na+ cations of the metal cluster salt and the crown ether derivatives. All obtained hybrids are homogeneous, emit in the red NIR region, and show liquid crystalline properties on a wider temperature range than their precursors. Charge transport properties have been investigated by using a space charge limited current device. Obtained results demonstrate that metal cluster compounds can enhance the charge carrier mobility by 5 orders of magnitude compared to the native discotic organic ligands. Considering that the presented organic crown ether derivatives are not the best candidates to design optoelectronic devices because of their inherently low conductivity, but that similar compounds were developed to design proton conductive porous framework, our results open promising perspectives for the use of metal cluster compounds in devices dedicated to such a field.
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Affiliation(s)
- Irene Carrasco
- Univ Rennes, CNRS, ISCR─UMR 6226, ScanMAT─UAR 2025, IETR─UMR6164, F-35000 Rennes, France
| | - Philipp Ehni
- Institut für Organische Chemie, Universität Stuttgart, Pfaffenwaldring 55, 70569 Stuttgart, Germany
| | - Max Ebert
- Institut für Organische Chemie, Universität Stuttgart, Pfaffenwaldring 55, 70569 Stuttgart, Germany
| | - Noée Dumait
- Univ Rennes, CNRS, ISCR─UMR 6226, ScanMAT─UAR 2025, IETR─UMR6164, F-35000 Rennes, France
| | - Gregory Taupier
- Univ Rennes, CNRS, ISCR─UMR 6226, ScanMAT─UAR 2025, IETR─UMR6164, F-35000 Rennes, France
| | - Maria Amela-Cortes
- Univ Rennes, CNRS, ISCR─UMR 6226, ScanMAT─UAR 2025, IETR─UMR6164, F-35000 Rennes, France
| | - Claire Roiland
- Univ Rennes, CNRS, ISCR─UMR 6226, ScanMAT─UAR 2025, IETR─UMR6164, F-35000 Rennes, France
| | - Stéphane Cordier
- Univ Rennes, CNRS, ISCR─UMR 6226, ScanMAT─UAR 2025, IETR─UMR6164, F-35000 Rennes, France
| | - Julius A Knöller
- Institut für Organische Chemie, Universität Stuttgart, Pfaffenwaldring 55, 70569 Stuttgart, Germany
| | - Emmanuel Jacques
- Univ Rennes, CNRS, ISCR─UMR 6226, ScanMAT─UAR 2025, IETR─UMR6164, F-35000 Rennes, France
| | - Sabine Laschat
- Institut für Organische Chemie, Universität Stuttgart, Pfaffenwaldring 55, 70569 Stuttgart, Germany
| | - Yann Molard
- Univ Rennes, CNRS, ISCR─UMR 6226, ScanMAT─UAR 2025, IETR─UMR6164, F-35000 Rennes, France
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Karamov DD, Galiev AF, Lachinov AA, Davlyatgareev KI, Salazkin SN, Yakhin AR, Lachinov AN. Non-Conjugated Poly(Diphenylene Phthalide)-New Electroactive Material. Polymers (Basel) 2023; 15:3366. [PMID: 37631421 PMCID: PMC10459138 DOI: 10.3390/polym15163366] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Revised: 08/07/2023] [Accepted: 08/09/2023] [Indexed: 08/27/2023] Open
Abstract
In organic electronics, conjugated conductive polymers are most widely used. The scope of their application is currently very wide. Non-conjugated polymers are used much less in electronics and are usually used as insulation materials or materials for capacitors. However, the potential of non-conjugated polymers is much wider, due to the fact that new electronic materials with unique electronic properties can be created on the basis of non-conjugated polymers, as well as other inorganic dielectrics. This article demonstrates the possibilities of creating electrically conductive materials with unique electronic parameters based on non-conjugated polymers. The results of the study of the sensory properties of humidity are given as examples of the practical application of the structure. The abnormal electronic properties are realized along the interface of two polymer dielectrics with functional polar groups. The submicron films of polydiphenylenephthalide were used as a dielectric. It is shown that a quasi-two-dimensional electronic structure with abnormally large values of conductivity and mobility of charge carriers occurs along the interface. These structures are often called quasi-two-dimensional electron gas (Q2DEG). This article describes the manufacturing processes of multielectrode devices. Polymer films are deposited via the spin-coating method with polymer solutions in cyclohexanone. The metal electrodes were manufactured through thermal deposition in a vacuum. Three types of metal electrodes made of aluminum, copper and chromium were used. The influence of the electron work function of contacting metals on the electronic parameters of the structure was studied. It was established that the work function decrease leads to an increase in the conductivity and mobility of charge carriers. The charge carrier parameters were estimated based on the analysis of the current-voltage characteristics within the space-charge-limited current technique. The Richardson-Schottky thermionic emission model was used to evaluate values a potential barrier at metal/organic interfaces. It was established that the change in ambient humidity strongly affects the electronic transport properties along the polymer/polymer interface. It is demonstrated that the increase in conductivity with an increase in humidity occurs due to an increase in the mobility of charge carriers and a decrease in the height of the potential barrier at the three-dimensional metal contact with two-dimensional polymer interface. The potential barrier between the electrode and the bulk of the polymer film is significantly higher than between the electrode and the quasi-two-dimensional polymer structure.
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Affiliation(s)
- Danfis D. Karamov
- Institute of Molecule and Crystal Physics—Subdivision of the Ufa Federal Research Centre of the Russian Academy of Sciences, 450075 Ufa, Russia; (A.F.G.); (A.N.L.)
| | - Azat F. Galiev
- Institute of Molecule and Crystal Physics—Subdivision of the Ufa Federal Research Centre of the Russian Academy of Sciences, 450075 Ufa, Russia; (A.F.G.); (A.N.L.)
| | - Alexey A. Lachinov
- Institute of Molecule and Crystal Physics—Subdivision of the Ufa Federal Research Centre of the Russian Academy of Sciences, 450075 Ufa, Russia; (A.F.G.); (A.N.L.)
| | - Khalim I. Davlyatgareev
- Institute of Physics, Mathematics, Digital and Nanotechnologies, Akmulla Bashkir State Pedagogical University, 450000 Ufa, Russia
| | - Sergey N. Salazkin
- Nesmeyanov Institute of Organoelement Compounds of the Russian Academy of Sciences, 119334 Moscow, Russia;
- Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, 119991 Moscow, Russia
| | - Artur R. Yakhin
- Institute of Physics, Mathematics, Digital and Nanotechnologies, Akmulla Bashkir State Pedagogical University, 450000 Ufa, Russia
| | - Alexey N. Lachinov
- Institute of Molecule and Crystal Physics—Subdivision of the Ufa Federal Research Centre of the Russian Academy of Sciences, 450075 Ufa, Russia; (A.F.G.); (A.N.L.)
- Institute of Physics, Mathematics, Digital and Nanotechnologies, Akmulla Bashkir State Pedagogical University, 450000 Ufa, Russia
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Wang G, Li C, Tang H, Li B, Madonini F, Alsallom FF, Calvin Sun WK, Peng P, Villa F, Li J, Cappellaro P. Manipulating solid-state spin concentration through charge transport. Proc Natl Acad Sci U S A 2023; 120:e2305621120. [PMID: 37527342 PMCID: PMC10410760 DOI: 10.1073/pnas.2305621120] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/06/2023] [Accepted: 06/30/2023] [Indexed: 08/03/2023] Open
Abstract
Solid-state defects are attractive platforms for quantum sensing and simulation, e.g., in exploring many-body physics and quantum hydrodynamics. However, many interesting properties can be revealed only upon changes in the density of defects, which instead is usually fixed in material systems. Increasing the interaction strength by creating denser defect ensembles also brings more decoherence. Ideally one would like to control the spin concentration at will while keeping fixed decoherence effects. Here, we show that by exploiting charge transport, we can take some steps in this direction, while at the same time characterizing charge transport and its capture by defects. By exploiting the cycling process of ionization and recombination of NV centers in diamond, we pump electrons from the valence band to the conduction band. These charges are then transported to modulate the spin concentration by changing the charge state of material defects. By developing a wide-field imaging setup integrated with a fast single photon detector array, we achieve a direct and efficient characterization of the charge redistribution process by measuring the complete spectrum of the spin bath with micrometer-scale spatial resolution. We demonstrate a two-fold concentration increase of the dominant spin defects while keeping the T2 of the NV center relatively unchanged, which also provides a potential experimental demonstration of the suppression of spin flip-flops via hyperfine interactions. Our work paves the way to studying many-body dynamics with temporally and spatially tunable interaction strengths in hybrid charge-spin systems.
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Affiliation(s)
- Guoqing Wang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA02139
- Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA02139
| | - Changhao Li
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA02139
- Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA02139
| | - Hao Tang
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA02139
| | - Boning Li
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA02139
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA02139
| | - Francesca Madonini
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA02139
- Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milano20133, Italy
| | - Faisal F. Alsallom
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA02139
| | - Won Kyu Calvin Sun
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA02139
| | - Pai Peng
- Department of Electrical Engineering, Princeton University, Princeton, NJ08544
| | - Federica Villa
- Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milano20133, Italy
| | - Ju Li
- Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA02139
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA02139
| | - Paola Cappellaro
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA02139
- Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA02139
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA02139
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Advincula AA, Atassi A, Gregory SA, Thorley KJ, Ponder JF, Freychet G, Jones AL, Su GM, Yee SK, Reynolds JR. Elucidating Design Rules toward Enhanced Solid-State Charge Transport in Oligoether-Functionalized Dioxythiophene-Based Alternating Copolymers. ACS Appl Mater Interfaces 2023. [PMID: 37449957 PMCID: PMC10375480 DOI: 10.1021/acsami.3c00053] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/18/2023]
Abstract
This study investigates the solid-state charge transport properties of the oxidized forms of dioxythiophene-based alternating copolymers consisting of an oligoether-functionalized 3,4-propylenedioxythiophene (ProDOT) copolymerized with different aryl groups, dimethyl ProDOT (DMP), 3,4-ethylenedioxythiophene (EDOT), and 3,4-phenylenedioxythiophene (PheDOT), respectively, to yield copolymers P(OE3)-D, P(OE3)-E, and P(OE3)-Ph. At a dopant concentration of 5 mM FeTos3, the electrical conductivities of these copolymers vary significantly (ranging between 9 and 195 S cm-1) with the EDOT copolymer, P(OE3)-E, achieving the highest electrical conductivity. UV-vis-NIR and X-ray spectroscopies show differences in both susceptibility to oxidative doping and extent of oxidation for the P(OE3) series, with P(OE3)-E being the most doped. Wide-angle X-ray scattering measurements indicate that P(OE3)-E generally demonstrates the lowest paracrystallinity values in the series, as well as relatively small π-π stacking distances. The significant (i.e., order of magnitude) increase in electrical conductivity of doped P(OE3)-E films versus doped P(OE3)-D or P(OE3)-Ph films can therefore be attributed to P(OE3)-E exhibiting both the highest carrier ratios in the P(OE3) series, along with good π-π overlap and local ordering (low paracrystallinity values). Furthermore, these trends in the extent of doping and paracrystallinity are consistent with the reduced Fermi energy level and transport function prefactor parameters calculated using the semilocalized transport (SLoT) model. Observed differences in carrier ratios at the transport edge (ct) and reduced Fermi energies [η(c)] suggest a broader electronic band (better overlap and more delocalization) for the EDOT-incorporating P(OE3)-E polymer relative to P(OE3)-D and P(OE3)-Ph. Ultimately, we rationalize improvements in electrical conductivity due to microstructural and doping enhancements caused by EDOT incorporation, a structure-property relationship worth considering in the future design of highly electrically conductive systems.
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Affiliation(s)
- Abigail A Advincula
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, United States
- ARCTOS Technology Solutions, Dayton, Ohio 45432, United States
| | - Amalie Atassi
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Shawn A Gregory
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Karl J Thorley
- Center for Applied Energy Research, University of Kentucky, Lexington, Kentucky 40511, United States
| | - James F Ponder
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, United States
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
- UES, Inc., Dayton, Ohio 45432, United States
| | - Guillaume Freychet
- NSLS-II, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Austin L Jones
- School of Chemistry and Biochemistry, Georgia Tech Polymer Network, Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Gregory M Su
- Advanced Light Source and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Shannon K Yee
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - John R Reynolds
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
- School of Chemistry and Biochemistry, Georgia Tech Polymer Network, Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
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46
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Song Z, Yang J, Dong X, Wang R, Dong Y, Liu D, Liu Y. Inverted Wide-Bandgap 2D/3D Perovskite Solar Cells with >22% Efficiency and Low Voltage Loss. Nano Lett 2023. [PMID: 37431747 DOI: 10.1021/acs.nanolett.3c01962] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Subscribe] [Scholar Register] [Indexed: 07/12/2023]
Abstract
Wide-bandgap perovskites play a key role in high-performance tandem solar cells, which have the potential to break the Schockley-Queisser limit. Here, a 2D/3D hybrid wide-bandgap perovskite was developed using octane-1,8-diaminium (ODA) as spacer. The incorporation of the ODA spacer can not only significantly reduce charge carrier nonradiative recombination loss but also inhibit phase separation. Moreover, with a synergy effect using butylammonium iodide (BAI) as a surface defect passivator, both the phase stability and device performance were further improved. Compared to the control inverted device with a VOC of 1.16 V and a PCE of 18.50%, the optimized PSCs based on a surface processed 2D/3D perovskite exhibit a superior high VOC of 1.26 V and a champion PCE of 22.19%, which is a record efficiency for wide-bandgap PSCs (Eg > 1.65 eV). This work provides a very effective strategy to suppress phase separation in wide-bandgap perovskites for highly efficient and stable solar cells.
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Affiliation(s)
- Zonglong Song
- The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry and Renewable Energy Conversion and Storage Center (RECAST), Nankai University, Tianjin 300071, China
| | - Jing Yang
- Renewable Energy and New Power System Engineering Research Center, China Three Gorges Corporation, Beijing 100038, China
| | - Xiyue Dong
- The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry and Renewable Energy Conversion and Storage Center (RECAST), Nankai University, Tianjin 300071, China
| | - Rui Wang
- The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry and Renewable Energy Conversion and Storage Center (RECAST), Nankai University, Tianjin 300071, China
| | - Yixin Dong
- Renewable Energy and New Power System Engineering Research Center, China Three Gorges Corporation, Beijing 100038, China
| | - Dongxue Liu
- Renewable Energy and New Power System Engineering Research Center, China Three Gorges Corporation, Beijing 100038, China
| | - Yongsheng Liu
- The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry and Renewable Energy Conversion and Storage Center (RECAST), Nankai University, Tianjin 300071, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
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47
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Steponaitis M, Jankauskas V, Kamarauskas E, Malinauskienė V, Karazhanov S, Malinauskas T, Getautis V. Investigation of biphenyl enamines for applications as p-type semiconductors. R Soc Open Sci 2023; 10:230260. [PMID: 37501661 PMCID: PMC10369019 DOI: 10.1098/rsos.230260] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/06/2023] [Accepted: 07/05/2023] [Indexed: 07/29/2023]
Abstract
Due to the ease of synthesis and the ability to easily tune properties, organic semiconductors are widely researched and used in many optoelectronic applications. Requirements such as thermal stability, appropriate energy levels and charge-carrier mobility have to be met in order to consider the suitability of an organic semiconductor for a specific application. Balancing of said properties is not a trivial task; often one characteristic is sacrificed to improve the other and therefore a search for well-balanced materials is necessary. Herein, seven new charge-transporting biphenyl-based enamine molecules are reported. The new materials were synthesized using a simple one-step reaction without the use of expensive transition metal catalysts. It was observed that subtle variations in the structure lead to notable changes in the properties. Materials exhibited high thermal stability and relatively high carrier drift mobility, reaching 2 × 10-2 cm2V-1 s-1 (for BE3) at strong electric fields. Based on the results, three materials show the potential to be applied in organic light emitting diodes and solar cells.
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Affiliation(s)
- Matas Steponaitis
- Department of Organic Chemistry, Kaunas University of Technology, Radvilenu pl. 19, 50254 Kaunas, Lithuania
| | - Vygintas Jankauskas
- Institute of Chemical Physics, Vilnius University, Sauletekio av. 9, 10222 Vilnius, Lithuania
| | - Egidijus Kamarauskas
- Institute of Chemical Physics, Vilnius University, Sauletekio av. 9, 10222 Vilnius, Lithuania
| | - Vida Malinauskienė
- Department of Organic Chemistry, Kaunas University of Technology, Radvilenu pl. 19, 50254 Kaunas, Lithuania
| | - Smagul Karazhanov
- Institute for Energy Technology (IFE), P.O Box 40, NO 2027, Kjeller, Norway
| | - Tadas Malinauskas
- Department of Organic Chemistry, Kaunas University of Technology, Radvilenu pl. 19, 50254 Kaunas, Lithuania
| | - Vytautas Getautis
- Department of Organic Chemistry, Kaunas University of Technology, Radvilenu pl. 19, 50254 Kaunas, Lithuania
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48
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Lu Z, Hou S, Lin R, Shi J, Wu Q, Zhao S, Lin L, Tang C, Yang Y, Lambert CJ, Hong W. Single-Atom Control of Single-Molecule van der Waals Junctions with Semimetallic Transition Metal Dichalcogenide Electrodes. Nano Lett 2023. [PMID: 37387588 DOI: 10.1021/acs.nanolett.3c01264] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Subscribe] [Scholar Register] [Indexed: 07/01/2023]
Abstract
Electrodes play an essential role in controlling electrode-molecule coupling. However, conventional metal electrodes require linkers to anchor the molecule. Van der Waals interaction offers a versatile strategy to connect the electrode and molecule without anchor groups. Except for graphene, the potential of other materials as electrodes to fabricate van der Waals molecular junctions remains unexplored. Herein, we utilize semimetallic transition metal dichalcogenides (TMDCs) 1T'-WTe2 as electrodes to fabricate WTe2/metalated tetraphenylporphyrin (M-TPP)/WTe2 junctions via van der Waals interaction. Compared with chemically bonded Au/M-TPP/Au junctions, the conductance of these M-TPP van der Waals molecular junctions is enhanced by ∼736%. More importantly, WTe2/M-TPP/WTe2 junctions exhibit the tunable conductance from 10-3.29 to 10-4.44 G0 (1.15 orders of magnitude) via single-atom control, recording the widest tunable range of conductance for M-TPP molecular junctions. Our work demonstrates the potential of two-dimensional TMDCs for constructing highly tunable and conductive molecular devices.
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Affiliation(s)
- Zhixing Lu
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, IKKEM, Xiamen University, Xiamen 361005, China
| | - Songjun Hou
- Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom
| | - Rongjian Lin
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, IKKEM, Xiamen University, Xiamen 361005, China
| | - Jie Shi
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, IKKEM, Xiamen University, Xiamen 361005, China
| | - Qingqing Wu
- Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom
| | - Shiqiang Zhao
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, IKKEM, Xiamen University, Xiamen 361005, China
| | - Luchun Lin
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, IKKEM, Xiamen University, Xiamen 361005, China
| | - Chun Tang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, IKKEM, Xiamen University, Xiamen 361005, China
| | - Yang Yang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, IKKEM, Xiamen University, Xiamen 361005, China
| | - Colin J Lambert
- Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom
| | - Wenjing Hong
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, IKKEM, Xiamen University, Xiamen 361005, China
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49
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Morab S, Sundaram MM, Pivrikas A. Influence of Traps and Lorentz Force on Charge Transport in Organic Semiconductors. Materials (Basel) 2023; 16:4691. [PMID: 37445005 DOI: 10.3390/ma16134691] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2023] [Revised: 06/24/2023] [Accepted: 06/26/2023] [Indexed: 07/15/2023]
Abstract
Charge transport characteristics in organic semiconductor devices become altered in the presence of traps due to defects or impurities in the semiconductors. These traps can lead to a decrease in charge carrier mobility and an increase in recombination rates, thereby ultimately affecting the overall performance of the device. It is therefore important to understand and mitigate the impact of traps on organic semiconductor devices. In this contribution, the influence of the capture and release times of trap states, recombination rates, and the Lorentz force on the net charge of a low-mobility organic semiconductor was determined using the finite element method (FEM) and Hall effect method through numerical simulations. The findings suggest that increasing magnetic fields had a lesser impact on net charge at constant capture and release times of trap states. On the other hand, by increasing the capture time of trap states at a constant magnetic field and fixed release time, the net charge extracted from the semiconductor device increased with increasing capture time. Moreover, the net charge extracted from the semiconductor device was nearly four and eight times greater in the case of the non-Langevin recombination rates of 0.01 and 0.001, respectively, when compared to the Langevin rate. These results imply that the non-Langevin recombination rate can significantly enhance the performance of semiconductor devices, particularly in applications that require efficient charge extraction. These findings pave the way for the development of more efficient and cost-effective electronic devices with improved charge transport properties and higher power conversion efficiencies, thus further opening up new avenues for research and innovation in this area of modern semiconductor technology.
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Affiliation(s)
- Seema Morab
- College of Science, Health, Engineering and Education, Murdoch University, Perth, WA 6150, Australia
| | | | - Almantas Pivrikas
- College of Science, Health, Engineering and Education, Murdoch University, Perth, WA 6150, Australia
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50
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Zhou Z, Luo N, Shao X, Zhang HL, Liu Z. Hyperbranched Polymers for Organic Semiconductors. Chempluschem 2023:e202300261. [PMID: 37377071 DOI: 10.1002/cplu.202300261] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/31/2023] [Revised: 06/28/2023] [Accepted: 06/28/2023] [Indexed: 06/29/2023]
Abstract
Hyperbranched polymers (HBPs) attracted increasing attention owing to their distinct highly branched topological structures, resulting in unique properties and wide applications in organic semiconductors (OSCs). In the present review, recent progress in functional HBPs is outlined in the field of OSCs, including organic light-emitting diodes (OLEDs), organic photovoltaics (OPVs), dye-sensitized solar cells (DSSCs), and organic field effect transistors (OFETs), among others. Prospects of HBPs-based materials in OSCs are examined. The results revealed that multi-dimensional topologies not only regulate the charge transport but also adjust the film morphology, thereby affecting the efficiency and long life of organic electronic devices. Many studies showed the usefulness of HBPs as hole transport materials but reports dealing with n-type and ambipolar materials are still lacking. In addition, the interchain covalent bond in hyperbranched polymers could mitigate the damage caused by stretching, conducive to building stable flexible stretchable devices with long-term durability and good safety under harsh environmental conditions. Overall, the flexible stretchable design may enrich the applications of HBPs in organic semiconductors and provide new ideas for guiding the future design of functional organic semiconductor materials.
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Affiliation(s)
- Zhaoqiong Zhou
- Lanzhou University, State Key Laboratory of Applied Organic Chemistry, CHINA
| | - Nan Luo
- Lanzhou University, State Key Laboratory of Applied Organic Chemistry, CHINA
| | - Xiangfeng Shao
- Lanzhou University, State Key Laboratory of Applied Organic Chemistry, CHINA
| | - Hao-Li Zhang
- Lanzhou University, State Key Laboratory of Applied Organic Chemistry, CHINA
| | - Zitong Liu
- Lanzhou University, State key laboratory of applied organic chemistry, Tianshui south road 222, 730000, Lanzhou, CHINA
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