Z-Type Ligand Enables Efficient and Stable Deep-Blue Perovskite Light-Emitting Diodes

During the synthesis of deep-blue perovskite quantum dots (PQDs), they generally emerge as a two-dimensional byproduct with poor yield and low photoluminescence quantum yield (PLQY) due to amine ligand enrichment-induced abundant surface defects. Herein, we provide a colloidal synthesis method to prepare deep-blue CsPbBr3 PQDs in a green nontoxic solvent via strategic Z-type ligand engineering. Z-type ligands of zinc octanoate enable the formation of robust coordination bonds with surface bromide ions of PQDs, maintaining acid-base equilibrium and reducing excess amine enrichment on the PQDs surface. Consequently, homogeneous and monodispersed PQDs with improved PLQY of 73% are successfully synthesized, achieving efficient deep-blue LEDs with a peak EQE of 5.46%, a maximum luminance of 847.6 cd/m2, and an operational half-lifetime of 14 min. The devices exhibit color coordinates of (0.137, 0.049), closely approximating the Rec. 2020 blue standard. Our work offers a potentially eco-friendly and viable route for realizing high-performance LEDs in the deep-blue region.

Crown-Assisted CsCu2I3 Growth and Trap Passivation for Perovskite Light-Emitting Diodes

Copper (Cu)-based perovskites are promising for lead-free perovskite light-emitting diodes (PeLEDs). However, it remains a significant challenge to achieve high performance devices due to the nonradiative loss caused by the disordered crystallization and lack of passivation. Crown ethers are known to form host-guest complexes by the interaction between C-O-C groups and certain cations, and 18-crown-6 (18C6) with an appropriate complementary size can interact with Cs+ and Cu+ cations. Herein, we studied the interaction between CsCu2I3 and two crowns with the same cyclic size, 18C6 and dibenzo-18-crown-6 (D18C6). Particularly, D18C6 can reduce the nonradiative recombination rate of CsCu2I3 film by passivating the defects and optimizing the film morphology effectively. The room mean square (RMS) decreased from 5.06 to 2.95 nm, and the PLQY was promoted from 4.71% to 19.9%. Besides, D18C6 can also decrease the barrier of hole injection. The PeLEDs based on D18C6-modified CsCu2I3 realized noticeable improvement with a maximum luminance and EQE of 583 cd/m2 and 0.662%, respectively.

Interfacial Regulation toward Efficient CsPbBr3 Quantum Dot-Based Inverted Perovskite Light-Emitting Diodes

Inverted perovskite light-emitting diodes (PeLEDs) based on quantum dots (QDs) are some of the most promising candidates for next-generation lighting and display applications. Due to the strong fluorescence quenching caused by zinc oxide, high performance in such inverted devices remains challenging. Here, we report an efficient inverted green CsPbBr3 QDs LED using an emitting buffer layer. Ultrathin CsPbBr3 QD emitters act as the buffer layer to reduce the interface luminescence quenching reaction at the ZnO/upper emitting layer interface, increasing the probability of exciton recombination within the emissive layer and regulating the charge transport, leading to effective carrier recombination. The resulting device exhibits an external quantum efficiency of 13.1%, enhanced by about 4.7 times compared with that without a buffer layer device. This work provides a path to fabricating high-performance inverted PeLEDs.

Charge Injection and Auger Recombination Modulation for Efficient and Stable Quasi-2D Perovskite Light-Emitting Diodes

The inefficient charge transport and large exciton binding energy of quasi-2D perovskites pose challenges to the emission efficiency and roll-off issues for perovskite light-emitting diodes (PeLEDs) despite excellent stability compared to 3D counterparts. Herein, alkyldiammonium cations with different molecular sizes, namely 1,4-butanediamine (BDA), 1,6-hexanediamine (HDA) and 1,8-octanediamine (ODA), are employed into quasi-2D perovskites, to simultaneously modulate the injection efficiency and recombination dynamics. The size increase of the bulky cation leads to increased excitonic recombination and also larger Auger recombination rate. Besides, the larger size assists the formation of randomly distributed 2D perovskite nanoplates, which results in less efficient injection and deteriorates the electroluminescent performance. Moderate exciton binding energy, suppressed 2D phases and balanced carrier injection of HDA-based PeLEDs contribute to a peak external quantum efficiency of 21.9%, among the highest in quasi-2D perovskite based near-infrared devices. Besides, the HDA-PeLED shows an ultralong operational half-lifetime T50 up to 479 h at 20 mA cm-2 , and sustains the initial performance after a record-level 30 000 cycles of ON-OFF switching, attributed to the suppressed migration of iodide anions into adjacent layers and the electrochemical reaction in HDA-PeLEDs. This work provides a potential direction of cation design for efficient and stable quasi-2D-PeLEDs.

Enhancing Light Outcoupling Efficiency via Anisotropic Low Refractive Index Electron Transporting Materials for Efficient Perovskite Light-Emitting Diodes

Thanks to the extensive efforts toward optimizing perovskite crystallization properties, high-quality perovskite films with near-unity photoluminescence quantum yield are successfully achieved. However, the light outcoupling efficiency of perovskite light-emitting diodes (PeLEDs) is impeded by insufficient light extraction, which poses a challenge to the further advancement of PeLEDs. Here, an anisotropic multifunctional electron transporting material, 9,10-bis(4-(2-phenyl-1H-benzo[d]imidazole-1-yl)phenyl) anthracene (BPBiPA), with a low extraordinary refractive index (ne ) and high electron mobility is developed for fabricating high-efficiency PeLEDs. The anisotropic molecular orientations of BPBiPA can result in a low ne of 1.59 along the z-axis direction. Optical simulations show that the low ne of BPBiPA can effectively mitigate the surface plasmon polariton loss and enhance the photon extraction efficiency in waveguide mode, thereby improving the light outcoupling efficiency of PeLEDs. In addition, the high electron mobility of BPBiPA can facilitate balanced carrier injection in PeLEDs. As a result, high-efficiency green PeLEDs with a record external quantum efficiency of 32.1% and a current efficiency of 111.7 cd A-1 are obtained, which provides new inspirations for the design of electron transporting materials for high-performance PeLEDs.

In Situ Hydrolysis of Phosphate Enabling Sky-Blue Perovskite Light-Emitting Diode with EQE Approaching 16.32

The performance of blue perovskite light-emitting diodes (PeLEDs) lags behind the green and red counterparts owing to high trap density and undesirable red shift of the electroluminescence spectrum under operation conditions. Organic molecular additives were employed as passivators in previous reports. However, most commonly have limited functions, making it challenging to effectively address both efficiency and stability issues simultaneously. Herein, we reported an innovatively dynamic in situ hydrolysis strategy to modulate quasi-2D sky-blue perovskites by the multifunctional passivator phenyl dichlorophosphate that not only passivated the defects but also underwent in situ hydrolysis reaction to stabilize the emission. Moreover, hydrolysis products were beneficial for low-dimensional phase manipulation. Eventually, we obtained high-performance sky-blue PeLEDs with a maximum external quantum efficiency (EQE) of 16.32% and an exceptional luminance of 5740 cd m-2. More importantly, the emission peak of devices located at 485 nm remained stable under different biases. Our work signified the significant advancement toward realizing future applications of PeLEDs.

Tailoring Phase Distribution of Quasi-2D Perovskites via Taurine-Assistance Enables Efficient Blue Light-Emitting Diodes

Quasi-2D (Q-2D) perovskites with typical varied n-phase structures deserve promising candidates in pursuing high-performance perovskite light-emitting diodes (PeLEDs). Whereas their weakness in precise n-phase distribution control disables the optical property of PeLEDs since the n = 1 phase is dominated by severe nonradiative recombination. Here, an effective phase distribution tailoring strategy is developed for pure blue PeLEDs by introducing taurine (TAU) into mixed halide Q-2D perovskites. The sulfonic acid group in TAU can coordinate with Pb2+ to suppress the formation of the n = 1 phase while promoting the growth of Q-2D perovskites into domains with the graded distribution of n = 2 and 3. The amino group in TAU forms hydrogen bonds with electronegative halide ions, suppressing the formation of halide vacancies and reducing the defect density in the Q-2D perovskite films. As a result, optimized blue Q-2D perovskite films boosted PLQY to 92%. Target blue PeLED  was endowed with a peak EQE of 14.82% (average 12.6%) at 475 nm and a maximum luminance of 1937 cd m-2 , which is among the reported high-level pure blue PeLEDs. This work demonstrates a feasible approach to regulate the phase distribution of Q-2D perovskites for high-performance blue PeLEDs.

Synergistic Surface Modification for High-Efficiency Perovskite Nanocrystal Light-Emitting Diodes: Divalent Metal Ion Doping and Halide-Based Ligand Passivation

Surface defects of metal halide perovskite nanocrystals (PNCs) substantially compromise the optoelectronic performances of the materials and devices via undesired charge recombination. However, those defects, mainly the vacancies, are structurally entangled with each other in the PNC lattice, necessitating a delicately designed strategy for effective passivation. Here, a synergistic metal ion doping and surface ligand exchange strategy is proposed to passivate the surface defects of CsPbBr3 PNCs with various divalent metal (e.g., Cd2+ , Zn2+, and Hg2+ ) acetate salts and didodecyldimethylammonium (DDA+ ) via one-step post-treatment. The addition of metal acetate salts to PNCs is demonstrated to suppress the defect formation energy effectively via the ab initio calculations. The developed PNCs not only have near-unity photoluminescence quantum yield and excellent stability but also show luminance of 1175 cd m-2 , current efficiency of 65.48 cd A-1 , external quantum efficiency of 20.79%, wavelength of 514 nm in optimized PNC light-emitting diodes with Cd2+ passivator and DDA ligand. The "organic-inorganic" hybrid engineering approach is completely general and can be straightforwardly applied to any combination of quaternary ammonium ligands and source of metal, which will be useful in PNC-based optoelectronic devices such as solar cells, photodetectors, and transistors.

High-Efficiency and Emission-Tunable Inorganic Blue Perovskite Light-Emitting Diodes Based on Vacuum Deposition

The fabrication of perovskite light-emitting diodes (PeLEDs) with vacuum deposition shows great potential and commercial value in realizing large-area display panel manufacturing. However, the electroluminescence (EL) performance of vacuum-deposited PeLEDs still lags behind the counterparts fabricated by solution process, especially in the field of blue PeLEDs. Here, the fabrication of high-quality CsPbBr3- x Clx film through tri-source co-evaporation is reported to achieve high photoluminescence quantum yield (PLQY). Compared with the conventional traditional dual-source co-evaporation, the tri-source co-evaporation method allows for freely adjustable elemental ratios, enabling the introduction of the lattice-matched Cs4 Pb(Br/Cl)6 phase with the quantum-limited effect into the inorganic CsPb(Br/Cl)3 emitter. By adjusting the phase distribution, the surface defects of the emitter can be effectively reduced, leading to better blue emission and film quality. Further, the effects of Cs/Pb ratio and Br/Cl ratio on the PLQY and carrier recombination dynamics of perovskite films are investigated. By optimizing the deposition rate of each precursor source, spectrally stable blue PeLEDs are achieved with tunable emission ranging from 468 to 488 nm. Particularly, the PeLEDs with an EL peak at 488 nm show an external quantum efficiency (EQE) of 4.56%, which is the highest EQE value for mixed-halide PeLEDs fabricated by vacuum deposition.

High Curvature PEDOT:PSS Transport Layer Toward Enhanced Perovskite Light-Emitting Diodes

The rapidly developed metal halide perovskite light-emitting diodes (PeLEDs) are considered as a promising candidate for next-generation display and illumination, but the unbalanced charge transport is still a hard-treat case to restrict its efficiency and operational stability. Here, a high curvature PEDOT:PSS transport layer is demonstrated via the self-assembly island-like structures by the incorporation of alkali metal salts. Benefiting from the dielectric confinement effect of the high curvature surface, the modified CsPbBr3 -based PeLEDs present a 2.1 times peak external quantum efficiency (EQE) from 6.75% to 14.23% and a 3.3 times half lifetime (T50 ) from 3.96 to 13.01 h. Besides, the PeLEDs show high luminance up to 44834 cd m-2 . Evidently, this work may provide a deep insight into the structure-activity relationship between the micro-structures at the PEDOT:PSS/perovskite interface and the performance of PeLEDs, and crack the codes for ameliorating the performance of PeLEDs via interfacial micro-structured regulation.

All-Thermally Evaporated Blue Perovskite Light-Emitting Diodes for Active Matrix Displays

With the rapid progress of perovskite light-emitting diodes (PeLEDs), the large-scale fabrication of active matrix PeLED displays (AM-PeLEDs) is gaining increasing attention. However, the integration of high-resolution PeLED arrays with thin-film transistor backplanes remains a significant challenge for conventional spin-coating techniques. Here, the demonstration of large-area, blue-emitting AM-PeLEDs are demonstrated using a vacuum deposition technique, which is regarded as the most effective route for organic light-emitting diode displays. By the introduction of an in situ passivation strategy, the defects-related nonradiative recombination is largely suppressed, which leads to an improved photoluminescence quantum yield of vapor-deposited blue-emitting perovskites. The as-prepared blue PeLEDs exhibit a peak external quantum efficiency of 2.47% with pure-blue emission at 475 nm, which represents state-of-the-art performance for vapor-deposited pure-blue PeLEDs. Benefiting from the excellent uniformity and compatibility of thermal evaporation, the 6.67-inch blue-emitting AM-PeLED display with a high resolution of 394 pixels per inch is successfully demonstrated. The demonstration of blue-emitting AM-PeLED display represents a crucial step toward full-color perovskite display technology.

A Multifunctional Additive Strategy Enables Efficient Pure-Blue Perovskite Light-Emitting Diodes

Lead halide perovskites have shown exceptional performance in light-emitting devices (PeLEDs), particularly in producing significant electroluminescence in sky-blue to near-infrared wavelengths. However, PeLEDs emitting pure-blue light at 465-475 nm are still not satisfactory. Herein, efficient and stable pure-blue PeLEDs are reported by controlling phase distribution, passivation of defects, as well as surface modifications using multifunctional phenylethylammonium trifluoroacetate (PEATFA) in reduced-dimensional p-F-PEA2 Csn-1 Pbn (Br0.55 Cl0.45 )3n+1 polycrystalline perovskite films. Compared with 4-fluorophenylethylammonium (p-F-PEA+ ) in the pristine films, phenylethylammonium (PEA+ ) has lower adsorption energy while interacting with perovskites, resulting in large-n low-dimensional perovskites, which can greatly facilitate charge transport within the low-dimensional perovskite films. The interaction between the CO group in trifluoroacetate (TFA- ) and perovskites significantly reduces defects in the perovskite films. Additionally, the electron-giving CF3 group in TFA- uplifts surface potential in the films, resulting in smooth electronic injection in devices. The multifunctional additive strategy leads to elevated radiative recombination and efficient carrier transport in the films and devices. As a result, the devices exhibit a maximum external quantum efficiency (EQE) of 11.87% at 468 nm with stable spectral output, the highest reported to date for pure-blue PeLEDs. Thus, this study extends the way for high-efficiency pure-blue LED with perovskite polycrystal films.

Homogeneous Phase Distribution in Q-2D Perovskites via Co-Assembly of Spacer Cations for Efficient Light-Emitting Diodes

Quasi-2D (Q-2D) perovskites are promising candidates to apply in light-emitting diodes (LEDs). However, delicate control on crystallization kinetics is needed to suppress severe phase segregation. Here, the crystallization kinetics of Q-2D perovskites are investigated via in situ absorbance spectroscopy and for the first time find the multiphase distribution is governed by the arrangement, rather than diffusion, of spacer cations at the nucleation stage, which associate with its assembling ability determined by molecular configuration. A "co-assembly" strategy is conceived by combining co-cations with different configuration characteristics, where bulky cations disturb the assembling between slender cations and lead-bromide sheet, contributing to homogeneous emitting phase with effective passivation. Correspondingly, in the phenylethylammonium (PEA+ )-based Q-2D perovskites ( = 3), homogeneous phase distribution is achieved by incorporating co-cation triphenylmethaneammonium (TPMA+ ), the branching terminals of which suppress cations assembling into low-n phases and afford adequate cations as passivating ligands. Therefore, the champion external quantum efficiency of the LED device reaches 23.9%, which is among the highest performance of green Q-2D perovskite LEDs. This work reveals that the arrangement of spacer cations determines the crystallization kinetics in Q-2D perovskites, providing further guidance on the molecular design and phase modulation of Q-2D perovskites.

Deep-Blue Perovskite Light-Emitting Diodes Realized by a Dynamic Interfacial Ion Exchange

The external quantum efficiency (EQE) of the sky-blue perovskite light-emitting diodes (PeLEDs) has reached 18.65%. However, the EQE of the deep-blue PeLEDs is still inferior to that of sky-blue PeLEDs, which restricts the PeLED application in displays. Herein, a novel dynamic interfacial ion-exchange technique is developed to obtain deep-blue PeLEDs. By spin-coating quaternary ammonium chloride on top of a quasi-2D green perovskite film, a 68 nm spectral transition from green light emission at 513 nm to deep-blue light emission at 445 nm has been successfully realized. To the best of our knowledge, it is the largest spectrum transition ever achieved. By further introducing tricyclohexylphosphine oxide into the perovskite precursor solution to passivate defects, high-quality deep-blue PeLEDs have been fabricated with color coordinates at (0.13, 0.06). The maximum EQE reaches 1.8%, and the peak luminance reaches 847 cd/m².

Multifunctional Conjugated Molecular Additives for Highly Efficient Perovskite Light-Emitting Diodes

Further optimization of perovskite light-emitting diodes (PeLEDs) is impeded by crystal deformation caused by residual stress and defect formation with subsequent non-radiative recombination. Molecular additives for defect passivation are widely studied; however, the majority have insulating properties that hinder charge injection and transport. Herein, highly efficient green-emitting PeLEDs are reported by introducing semiconducting molecular additives (Fl-OEGA and Fl-C8A). Transmission electron microscopy shows that conjugated additives exist primarily at the grain boundaries of perovskite, and Kelvin probe force microscopy confirms that the variation in contact potential difference between grain boundaries and perovskite crystal domains is significantly reduced. The residual tensile stress is reduced by 13% and the activation energy for ion migration increases in the Fl-OEGA-treated perovskite film, compared to those of the film without additives. Compared to insulating 2,2'-(ethylenedioxy)diethylamine (EDEA), the introduction of semiconducting additives prevents a significant reduction in the charge-transport capability. Furthermore, the PeLEDs with Fl-OEGA show a negligible shift in the turn-on voltage and a significantly smaller decrease in the current density with increasing Fl-OEGA compared to the devices with EDEA. Finally, the 3D CsPbBr₃ -PeLEDs show the highest external quantum efficiency of 21.3% by the incorporation of semiconducting Fl-OEGA as a new multifunctional additive.

Additive-Stabilized Emission Centers for Blue Perovskite Light-Emitting Diodes

The performance of the blue perovskite light-emitting diodes (PeLEDs) is limited by the low photoluminescence quantum yields (PLQYs) and the unstable emission centers. In this work, we incorporate sodium bromide and acesulfame potassium into a quasi-2D perovskite to control the dimension distribution and promote the PLQYs. Benefiting from the efficient energy cascade channel and passivation, the sky-blue PeLED has an external quantum efficiency of 9.7% and no shift of the electroluminescence center under operation voltages from 4 to 8 V. Moreover, the half lifetime of the devices reaches 325 s, 3.3 times that of control devices without additives. This work provides new insights into enhancing the performance of blue PeLEDs.

Glutamine Induced High-Quality Perovskite Film to Improve the Efficiency of NIR Perovskite Light-Emitting Diodes

Formamidine lead iodide (FAPbI₃ ) is an important material for realizing high-performance near-infrared light-emitting diodes (NIR-LEDs). However, due to the uncontrollable growth of solution-processed films which usually causes low coverage, and poor surface morphology, the development of FAPbI₃ -based NIR-LEDs is hindered, restraining its potential industrial applications. In this work, by employing glutamine (Gln) in perovskite precursor, the quality of FAPbI₃ film is improved significantly. Due to the ameliorated solution process by the organic additive, the film coverage over the substrate is substantially enhanced. Meanwhile, the trap state of grain is largely reduced. Consequently, NIR perovskite LEDs are demonstrated with a maximum external quantum efficiency (EQE) of 15% with the emission peak at 795 nm, which is four times higher than the device with pristine perovskite film.

Performance Enhancement of Perovskite Quantum Dot Light-Emitting Diodes via Management of Hole Injection

Poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) is widely used in optoelectronic devices due to its excellent hole current conductivity and suitable work function. However, imbalanced carrier injection in the PEDOT:PSS layer impedes obtaining high-performance perovskite light-emitting diodes (PeLEDs). In this work, a novel poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,40-(N-(p-butylphenyl))diphenylamine)] (TFB) is applied as the hole transport layers (HTLs) to facilitate the hole injection with cascade-like energy alignment between PEDOT:PSS and methylammonium lead tribromide (MAPbBr₃) film. Our results indicate that the introduced TFB layer did not affect the surface morphology or lead to any additional surface defects of the perovskite film. Consequently, the optimal PeLEDs with TFB HTLs show a maximum current efficiency and external quantum efficiency (EQE) of 21.26 cd A^-1 and 6.68%, respectively. Such EQE is 2.5 times higher than that of the control devices without TFB layers. This work provides a facile and robust route to optimize the device structure and improve the performance of PeLEDs.

Morphology and Luminescence Regulation for CsPbBr3 Perovskite Light-Emitting Diodes by Controlling Growth of Low-Dimensional Phases

At present, the high defect density and strong nonradiative recombination rate of all-inorganic cesium lead bromide (CsPbBr₃) perovskite light-emitting diodes (PeLEDs) seriously inhibit the improvement of their quantum efficiency. In this paper, the addition of a short-chain additive, diethylammonium bromide (DEABr), aims to control the generation of a quasi-2D large n-phase to optimize the surface morphology and construct two-dimensional/three-dimensional (2D/3D) heterojunction perovskite structures to enhance the EL efficiency of PeLEDs. Through Kelvin probe force microscopy (KPFM) characterization, we confirmed that the 2D phase grains with a low potential are locally formed on the surface of the perovskite film under the action of DEABr. The existence of the 2D phase effectively improved the surface morphology and suppressed surface defects. In addition, the in situ constructed 2D/3D heterojunction perovskite structure further increases the exciton radiative recombination rate and significantly improves the electroluminescent performance. By optimizing its doping concentration, the optimal all-inorganic PeLED displays a current efficiency (CE) of 30.3 cd A^-1, an external quantum efficiency (EQE) of 9.6%, and a maximum brightness of 32,500 cd m^-2. According to our results, the formation of 2D structures on the surface of the CsPbBr₃ film can improve surface morphology issues and optoelectronic properties of the film.

High-Efficiency Pure-Red Perovskite Quantum-Dot Light-Emitting Diodes

It is still challenging to achieve high-efficiency pure-red (620-650 nm wavelength) perovskite light-emitting diodes (PeLEDs). Herein, we report pure-red PeLEDs with Commission Internationale de l'Eclairage coordinates (0.703, 0.297) meeting the Rec. 2020, an external quantum efficiency of 20.8%, and a luminance of 3775 cd/m². This design is based on the strong quantum confinement CsPbI₃ quantum dots (QDs) capped by composite ligands of 3-phenyl-1-propylamine and tetrabutylammonium iodide. This strategy stabilized the structure of the strong-confined QDs and reduced the influence of the electric field-induced Stark effect on the PeLEDs. Furthermore, the exciton binding energy of the QDs was decreased by the composited ligands to suppress Auger recombination within the devices. Additionally, the valence-band maximum of the QDs was lifted to match the hole-transport layer, thus balancing charge injection in the PeLEDs. Our device also demonstrated a stable electroluminescence spectrum and a lifetime of 5.6 times longer than the control device.

Superior External Quantum Efficiency of LEDs via Quasi-2D Perovskite Crystals Implanted with Phenethylammonium Acetate

The multiple quantum well structure of a quasi-two-dimensional (quasi-2D) perovskite leads to nonradiative Auger recombination (AR). This is due to high local carrier density in recombination centers, although the radiative recombination is improved by efficient energy transfer. In this study, we suppress the AR by introducing phenethylammonium acetate (PEAAc) into the quasi-2D PEA₂Cs_n-1Pb_nBr_3n+1 perovskite. The recombination centers of n ≥ 4 phases can be promoted because the COO^- preferentially coordinates with Pb²⁺_, inhibiting the fast formation of n = 1, 2, 3 phases with phenethylammonium anion (PEA⁺). Thus, the AR is suppressed due to the lower density of local charge carriers. To balance the AR suppression and decreasing binding energy in promoting the n ≥ 4 phases, the PEAAc:PEABr molar ratios are adjusted. At the optimal molar ratio, perovskite light-emitting diodes (PeLEDs) with a maximum luminescence of ∼29942 cd m^-2 and a maximum external quantum efficiency of ∼20.2% are achieved. These results confirm the most efficient PeLEDs based on PEA₂Cs_n-1Pb_nBr_3n+1 without passivation. Moreover, the efficiency roll off is significantly mitigated with a high threshold of over 3.51 mA/cm². This study develops high-efficiency PeLEDs with a low efficiency rolloff.

Efficient Quasi-2D Perovskite Light-Emitting Diodes Enabled by Regulating Phase Distribution with a Fluorinated Organic Cation

Metal halide perovskites have become a research highlight in the optoelectronic field due to their excellent properties. The perovskite light-emitting diodes (PeLEDs) have achieved great improvement in performance in recent years, and the construction of quasi-2D perovskites by incorporating large-size organic cations is an effective strategy for fabricating efficient PeLEDs. Here, we incorporate the fluorine meta-substituted phenethylammonium bromide (m-FPEABr) into CsPbBr₃ to prepare quasi-2D perovskite films for efficient PeLEDs, and study the effect of fluorine substitution on regulating the crystallization kinetics and phase distribution of the quasi-2D perovskites. It is found that m-FPEABr allows the transformation of low-n phases to high-n phases during the annealing process, leading to the suppression of n = 1 phase and increasing higher-n phases with improved crystallinity. The rational phase distribution results in the formation of multiple quantum wells (MQWs) in the m-FPEABr based films. The carrier dynamics study reveals that the resultant MQWs enable rapid energy funneling from low-n phases to emission centers. As a result, the green PeLEDs achieve a peak external quantum efficiency of 16.66% at the luminance of 1279 cd m^-2. Our study demonstrates that the fluorinated organic cations would provide a facile and effective approach to developing high-performance PeLEDs.

Perovskite-Gallium Nitride Tandem Light-Emitting Diodes with Improved Luminance and Color Tunability

Tandem structures with different subpixels are promising for perovskite-based multicolor electroluminescence (EL) devices in ultra-high-resolution full-color displays; however, realizing excellent luminance- and color-independent tunability considering the low brightness and stability of blue perovskite light-emitting diodes (PeLEDs) remains a challenge. Herein, a bright and stable blue gallium nitride (GaN) LED is utilized for vertical integration with a green MAPbBr₃ PeLED, successfully achieving a Pe-GaN tandem LED with independently tunable luminance and color. The electronic and photonic co-excitation (EPCE) effect is found to suppress the radiative recombination and current injection of PeLEDs, leading to degraded luminance and current efficiency under direct current modulation. Accordingly, the pulse-width modulation is introduced to the tandem device with a negligible EPCE effect, and the average hybrid current efficiency is significantly improved by 139.5%, finally achieving a record tunable luminance (average tuning range of 16631 cd m^-2 at an arbitrary color from blue to green) for perovskite-based multi-color LEDs. The reported excellent independent tunability can be the starting point for perovskite-based multicolor EL devices, enabling the combination with matured semiconductor technologies to facilitate their commercialization in advanced display applications with ultra-high resolution.

Diammonium-Mediated Perovskite Film Formation for High-Luminescence Red Perovskite Light-Emitting Diodes

3D mixed-halide perovskite-based red emitters combine excellent charge-transport characteristics with simple solution processing and good film formation; however, light-emitting diodes (LEDs) based on these emitters cannot yet outperform their nanocrystal counterparts. Here the use of diammonium halides in regulating the formation of mixed bromide-iodide perovskite films is explored. It is found that the diammonium cations preferentially bond to Pb-Br, rather than Pb-I, octahedra, promoting the formation of quasi-2D phases. It is proposed that the perovskite formation is initially dominated by the crystallization of the thermodynamically more favorable 3D phase, but, as the solution gets depleted from the regular A cations, thin shells of amorphous quasi-2D perovskites form. This leads to crystalline perovskite grains with efficiently passivated surfaces and reduced lattice strain. As a result, the diammonium-treated perovskite LEDs demonstrate a record luminance (10745 cd m^-2 ) and half-lifetime among 3D perovskite-based red LEDs.

Ion Migration in Perovskite Light-Emitting Diodes: Mechanism, Characterizations, and Material and Device Engineering

In recent years, perovskite light-emitting diodes (PeLEDs) have emerged as a promising new lighting technology with high external quantum efficiency, color purity, and wavelength tunability, as well as, low-temperature processability. However, the operational stability of PeLEDs is still insufficient for their commercialization. The generation and migration of ionic species in metal halide perovskites has been widely acknowledged as the primary factor causing the performance degradation of PeLEDs. Herein, this topic is systematically discussed by considering the fundamental and engineering aspects of ion-related issues in PeLEDs, including the material and processing origins of ion generation, the mechanisms driving ion migration, characterization approaches for probing ion distributions, the effects of ion migration on device performance and stability, and strategies for ion management in PeLEDs. Finally, perspectives on remaining challenges and future opportunities are highlighted.

High-Luminance Microsized CH3NH3PbBr3 Single-Crystal-Based Light-Emitting Diodes via a Facile Liquid-Insulator Bridging Route

Micro-/nanosized organic-inorganic hybrid perovskite single crystals (SCs) with appropriate thickness and high crystallinity are promising candidates for high-performance electroluminescent (EL) devices. However, their small lateral size poses a great challenge for efficient device construction and performance optimization, causing perovskite SC-based light-emitting diodes (PSC-LEDs) to demonstrate poor EL performance. Here, we develop a facile liquid-insulator bridging (LIB) strategy to fabricate high-luminance PSC-LEDs based on single-crystalline CH₃NH₃PbBr₃ microflakes. By introducing a blade-coated poly(methyl methacrylate) (PMMA) insulating layer to effectively overcome the problems of leakage current and possible short circuits between electrodes, we achieve the reliable fabrication of PSC-LEDs. The LIB method also allows us to systematically boost the device performance through crystal growth regulation and device architecture optimization. Consequently, we realize the best CH₃NH₃PbBr₃ microflake-based PSC-LED with an ultrahigh luminance of 136100 cd m^-2 and a half-lifetime of 88.2 min at an initial luminance of ∼1100 cd m^-2, which is among the highest for organic-inorganic hybrid perovskite LEDs reported to date. Moreover, we observe the strong polarized edge emission of the microflake-based PSC-LEDs with a high degree of polarization up to 0.69. Our work offers a viable approach for the development of high-performance perovskite SC-based EL devices.

Conductive Phosphine Oxide Passivator Enables Efficient Perovskite Light-Emitting Diodes

Recently, surface passivation has been proved to be an essential approach for obtaining efficient and stable perovskite light-emitting diodes (Pero-LEDs). Phosphine oxides performed well as passivators in many reports. However, the most commonly used phosphine oxides are insulators, which may inhibit carrier transport between the perovskite emitter and charge-transporter layers, limiting the corresponding device performance. Here, 2,7-bis(diphenylphosphoryl)-9,9'-spirobifluorene (SPPO13), a conductive molecule with two phosphine oxide functional groups, is introduced to modify the perovskite emitting layer. The bifunctional SPPO13 can passivate the nonradiative defects of perovskite and promote electron injection at the interface of perovskite emitter and electron-transporter layers. As a result, the corresponding Pero-LEDs obtain a maximum external quantum efficiency (EQE) of 22.3%. In addition, the Pero-LEDs achieve extremely high brightness with a maximum of around 190 000 cd/m².

Deep-Red Perovskite Light-Emitting Diodes Based on One-Step-Formed γ-CsPbI3 Cuboid Crystallites

Inorganic CsPbI₃ perovskite with high chemical stability is attractive for efficient deep-red perovskite light-emitting diodes (PeLEDs) with high color purity. Compared to PeLEDs based on ex-situ-synthesized CsPbI₃ nanocrystals/quantum dots suffering from low conductivity and efficiency droop under high current densities, in situ deposited 3D CsPbI₃ films from precursor solutions can maintain high conductivity but show high trap density. Here, it is demonstrated that introducing diammonium iodide can increase the size of colloids in the precursor solution, retard the phase-transition rate, and passivate trap states of the in-situ-formed cuboid crystallites. The PeLED based on the one-step-formed 3D CsPbI₃ cuboid crystallite films shows a peak external quantum efficiency (EQE) value up to 15.03% because of the high conductivity and reduced trap states. Furthermore, this one-step method also has a wide processing window, which is attractive for flow-line production of large-area PeLED modules. The fabrication of a 9 cm² PeLED that exhibits a peak EQE of 10.30% is successfully demonstrated.

Efficient and Spectrally Stable Blue Perovskite Light-Emitting Diodes Employing a Cationic π-Conjugated Polymer

Metal halide perovskite semiconductors have demonstrated remarkable potentials in solution-processed blue light-emitting diodes (LEDs). However, the unsatisfied efficiency and spectral stability responsible for trap-mediated non-radiative losses and halide phase segregation remain the primary unsolved challenges for blue perovskite LEDs. In this study, it is reported that a fluorene-based π-conjugated cationic polymer can be blended with the perovskite semiconductor to control film formation and optoelectronic properties. As a result, sky-blue and true-blue perovskite LEDs with Commission Internationale de l'Eclairage coordinates of (0.08, 0.22) and (0.12, 0.13) at the record external quantum efficiencies of 11.2% and 8.0% were achieved. In addition, the mixed halide perovskites with the conjugated cationic polymer exhibit excellent spectral stability under external bias. This result illustrates that π-conjugated cationic polymers have a great potential to realize efficient blue mixed-halide perovskite LEDs with stable electroluminescence.

Spectrally Stable and Efficient Pure Red CsPbI3 Quantum Dot Light-Emitting Diodes Enabled by Sequential Ligand Post-Treatment Strategy

Metal halide perovskites are promising semiconductors for next-generation light-emitting diodes (LEDs) due to their high luminance, excellent color purity, and handily tunable band gap. However, it remains a great challenge to develop perovskite LEDs (PeLEDs) with pure red emission at the wavelength of 630 nm. Herein, we report a spectrally stable and efficient pure red PeLED by employing sequential ligand post-treated CsPbI₃ quantum dots (QDs). The synthesized CsPbI₃ QDs with a size of ∼5 nm are treated in sequential steps using the ligands of 1-hydroxy-3-phenylpropan-2-aminium iodide (HPAI) and tributylsulfonium iodide (TBSI), respectively. The CsPbI₃ QD films exhibit improved optoelectronic properties, which enables the fabrication of a pure red PeLED with a peak external quantum efficiency (EQE) of 6.4% and a stable EL emission centered at the wavelength of 630 nm. Our reported sequential ligand post-treatment strategy opens a new route to improve the stability and efficiency of PeLEDs based on QDs.

Interfacial "Anchoring Effect" Enables Efficient Large-Area Sky-Blue Perovskite Light-Emitting Diodes

While tremendous progress has recently been made in perovskite light-emitting diodes (PeLEDs), large-area blue devices feature inferior performance due to uneven morphologies and vast defects in the solution-processed perovskite films. To alleviate these issues, a facile and reliable interface engineering scheme is reported for manipulating the crystallization of perovskite films enabled by a multifunctional molecule 2-amino-1,3-propanediol (APDO)-triggered "anchoring effect" at the grain-growth interface. Sky-blue perovskite films with large-area uniformity and low trap states are obtained, showing the distinctly improved radiative recombination and hole-transport capability. Based on the APDO-induced interface engineering, synergistical boost in device performance is achieved for large-area sky-blue PeLED (measuring at 100 mm2 ) with a peak external quantum efficiency (EQE) of 9.2% and a highly prolonged operational lifetime. A decent EQE up to 6.1% is demonstrated for the largest sky-blue device emitting at 400 mm2 .

Promoting Energy Transfer via Manipulation of Crystallization Kinetics of Quasi-2D Perovskites for Efficient Green Light-Emitting Diodes

Quasi-2D (Q-2D) perovskites are promising materials applied in light-emitting diodes (LEDs) due to their high exciton binding energy and quantum confinement effects. However, Q-2D perovskites feature a multiphase structure with abundant grain boundaries and interfaces, leading to nonradiative loss during the energy-transfer process. Here, a more efficient energy transfer in Q-2D perovskites is achieved by manipulating the crystallization kinetics of different-n phases. A series of alkali-metal bromides is utilized to manipulate the nucleation and growth of Q-2D perovskites, which is likely associated with the Coulomb interaction between alkali-metal ions and the negatively charged PbBr₆ ^4- frames. The incorporation of K⁺ is found to restrict the nucleation of high-n phases and allows the subsequent growth of low-n phases, contributing to a spatially more homogeneous distribution of different-n phases and promoted energy transfer. As a result, highly efficient green Q-2D perovskites LEDs with a champion EQE of 18.15% and a maximum brightness of 25 800 cd m^-2 are achieved. The findings affirm a novel method to optimize the performance of Q-2D perovskite LEDs.

Efficient Blue Light Emitting Diodes Based On Europium Halide Perovskites

Flat panel displays enjoy 100 billion-dollar markets with significant penetration in daily life, which require efficient, color-saturated blue, green, and red light-emitting diodes (LEDs). The recently emerged halide perovskites have demonstrated low-cost and outstanding performance for potential LED applications. However, the performance of blue perovskite LEDs (PeLEDs) lags far behind red and green cousins, particularly for color coordinates approaching (0.131, 0.046) that fulfill the Rec. 2020 specification for blue emitters. Here, a high-efficiency, lead-free perovskite, CsEuBr₃ , is reported that exhibits bright blue exciton emission centered at 448 nm with a color coordinates of (0.15, 0.04), contributed from Eu-5d→Eu-4f/Br-4p transition with an optical band gap of 2.85 eV. Further optical characterizations reveal its short excited-state lifetime of 151 ns, excellent exciton diffusion diffusivity of 0.0227 cm² s^-1 , and high quantum yield of ≈69%. Inspired by these findings, deep-blue PeLEDs based on all-vacuum processing methods, which have been demonstrated as the most successful approach for the organic LED industry, are constructed. The devices show a maximum external quantum efficiency of 6.5% with an operating half-lifetime of 50 mins at an initial brightness of 15.9 cd m^-2 . It is anticipated that this work will inspire further research on lanthanide-based perovskites for next-generation LED applications.

Excess Ion-Induced Efficiency Roll-Off in High-Efficiency Perovskite Light-Emitting Diodes

Applying extensively excess ammonium halides in forming perovskites is a widely used approach to achieve high-performance perovskite light-emitting diodes (PeLEDs). However, most of these PeLEDs suffer from severe external quantum efficiency (EQE) roll-off at high current densities, thereby restricting the realization of high-brightness PeLEDs and laser diodes. In this work, we explore the underlying mechanism of the EQE roll-off in high-efficiency formamidinium lead iodide (FAPbI₃)-based PeLEDs. By combining voltage-dependent electrical stress measurements and ex situ ion distribution analysis of PeLEDs, we found that the electric field-driven migration and local segregation of excess iodide ions, originated from nonstoichiometric precursors, trigger the EQE roll-off via promoting imbalanced charge injection. Based on this discovery, we introduced a simple wash-off treatment with chloroform to remove the excess iodides from the perovskite surface and demonstrated that the treatment is highly effective in suppressing the roll-off behavior. By combining the treatment and the use of an ultrathin poly(methyl methacrylate) (PMMA) interlayer, we achieved a high-brightness PeLED with an EQE_max of 19.6%, a critical current density of 1550 mA cm^-2, and a radiance_max of 875 W sr^-1 m^-2. The study reveals the double-edge sword effect of precursor nonstoichiometry and highlights the importance of managing excess ions in perovskite films.

Low Roll-Off and High Stable Electroluminescence in Three-Dimensional FAPbI3 Perovskites with Bifunctional-Molecule Additives

Three-dimensional (3D) perovskites have been demonstrated as an effective strategy to achieve efficient light-emitting diodes (LEDs) at high brightness. However, most 3D perovskite LEDs still suffer from serious efficiency roll-off. Here, using FAPbI₃ as a model system, we find that the main reason for efficiency droop and degradation in 3D perovskite LEDs is defects and the ion migration under electrical stress. By introducing bifunctional-molecule 3-chlorobenzylamine additive into the perovskite precursor solution, the detrimental effects can be significantly suppressed through the growth of high crystalline perovskites and defect passivation. This approach leads to bright near-infrared perovskite LEDs with a peak external quantum efficiency of 16.6%, which sustains 80% of its peak value at a high current density of 460 mA cm^-2, corresponding to a high brightness of 300 W sr^-1 m^-2. Moreover, the device exhibits a record half-lifetime of 49 h under a constant current density of 100 mA cm^-2.

Perovskite Light-Emitting Diodes with External Quantum Efficiency Exceeding 22% via Small-Molecule Passivation

Perovskite light-emitting diodes (PeLEDs) are considered as particularly attractive candidates for high-quality lighting and displays, due to possessing the features of wide gamut and real color expression. However, most PeLEDs are made from polycrystalline perovskite films that contain a high concentration of defects, including point and extended imperfections. Reducing and mitigating non-radiative recombination defects in perovskite materials are still crucial prerequisites for achieving high performance in light-emitting applications. Here, ethoxylated trimethylolpropane triacrylate (ETPTA) is introduced as a functional additive dissolved in antisolvent to passivate surface and bulk defects during the spinning process. The ETPTA can effectively decrease the charge trapping states by passivation and/or suppression of defects. Eventually, the perovskite films that are sufficiently passivated by ETPTA make the devices achieve a maximum external quantum efficiency (EQE) of 22.49%. To our knowledge, these are the most efficient green PeLEDs up to now. In addition, a threefold increase in the T₅₀ operational time of the devices was observed, compared to control samples. These findings provide a simple and effective strategy to make highly efficient perovskite polycrystalline films and their optoelectronics devices.

Perovskite Light-Emitting Diodes with Near Unit Internal Quantum Efficiency at Low Temperatures

Room-temperature-high-efficiency light-emitting diodes based on metal halide perovskite FAPbI₃ are shown to be able to work perfectly at low temperatures. A peak external quantum efficiency (EQE) of 32.8%, corresponding to an internal quantum efficiency of 100%, is achieved at 45 K. Importantly, the devices show almost no degradation after working at a constant current density of 200 mA m^-2 for 330 h. The enhanced EQEs at low temperatures result from the increased photoluminescence quantum efficiencies of the perovskite, which is caused by the increased radiative recombination rate. Spectroscopic and calculation results suggest that the phase transitions of the FAPbI₃ play an important role for the enhancement of exciton binding energy, which increases the recombination rate.

Perovskite Quantum Dots with Ultralow Trap Density by Acid Etching-Driven Ligand Exchange for High Luminance and Stable Pure-Blue Light-Emitting Diodes

The research on metal halide perovskite light-emitting diodes (PeLEDs) with green and infrared emission has demonstrated significant progress in achieving higher functional performance. However, the realization of stable pure-blue (≈470 nm wavelength) PeLEDs with increased brightness and efficiency still constitutes a considerable challenge. Here, a novel acid etching-driven ligand exchange strategy is devised for achieving pure-blue emitting small-sized (≈4 nm) CsPbBr₃ perovskite quantum dots (QDs) with ultralow trap density and excellent stability. The acid, hydrogen bromide (HBr), is employed to etch imperfect [PbBr₆ ]^4- octahedrons, thereby removing surface defects and excessive carboxylate ligands. Subsequently, didodecylamine and phenethylamine are successively introduced to bond the residual uncoordinated sites of the QDs and attain in situ exchange with the original long-chain organic ligands, resulting in near-unity quantum yield (97%) and remarkable stability. The QD-based PeLEDs exhibit pure-blue electroluminescence at 470 nm (corresponding to the Commission Internationale del'Eclairage (CIE) (0.13, 0.11) coordinates), an external quantum efficiency of 4.7%, and a remarkable luminance of 3850 cd m^-2 , which is the highest brightness reported so far for pure-blue PeLEDs. Furthermore, the PeLEDs exhibit robust durability, with a half-lifetime exceeding 12 h under continuous operation, representing a record performance value for blue PeLEDs.

Efficient and Stable Red Perovskite Light-Emitting Diodes with Operational Stability >300 h

The long-term operational stability of perovskite light-emitting diodes (PeLEDs), especially red PeLEDs with only several hours typically, has always faced great challenges. Stable β-CsPbI₃ nanocrystals (NCs) are demonstrated for highly efficient and stable red-emitting PeLEDs through incorporation of poly(maleic anhydride-alt-1-octadecene) (PMA) in synthesizing the NCs. The PMA can chemically interact with PbI₂ in the precursors via the coupling effect between O groups in PMA and Pb²⁺ to favor crystallization of stable β-CsPbI₃ NCs. Meanwhile, the cross-linked PMA significantly reduces the Pb_Cs anti-site defect on the surface of the β-CsPbI₃ NCs. Benefiting from the improved crystal phase quality, the photoluminescence quantum yield for β-CsPbI₃ NCs films remarkably increases from 34% to 89%. The corresponding red-emitting PeLEDs achieves a high external quantum efficiency of 17.8% and superior operational stability with the lifetime, the time to half the initial electroluminescence intensity (T₅₀ ) reaching 317 h at a constant current density of 30 mA cm^-2 .

Phosphomolybdic Acid-Modified Monolayer Graphene Anode for Efficient Organic and Perovskite Light-Emitting Diodes

Graphene is a promising flexible transparent electrode, and significant progress in graphene-based optoelectronic devices has been accomplished by reducing the sheet resistance and tuning the work function. Herein, phosphomolybdic acid (PMA) is proposed as a novel p-type chemical dopant for graphene, and the optical and electrical properties of graphene are investigated systematically. As a result, the monolayer graphene electrode with lower sheet resistance and work function are obtained while maintaining a high transmittance. The Raman spectrum proves the p-type doping effect of PMA on graphene, and the X-ray photoelectron spectroscopy results reveal the mechanism, which is that the electrons transfer from graphene to PMA through the Mo-O-C bond. Furthermore, using the PMA-doped graphene anode, organic and perovskite light-emitting diodes obtained the maximum efficiencies of 129.3 and 15.6 cd/A with an increase of 50.8 and 36.8% compared with the pristine counterparts, respectively. This work confirms that PMA is a potential p-type chemical dopant to achieve an ideal graphene electrode and demonstrates the feasibility of PMA-doped graphene in the practical application of next-generation displays and solid-state lighting.

Directional Polarized Light Emission from Thin-Film Light-Emitting Diodes

Light-emitting diodes (LEDs) with directional and polarized light emission have many photonic applications, and beam shaping of these devices is fundamentally challenging because they are Lambertian light sources. In this work, using organic and perovskite LEDs (PeLEDs) for demonstrations, by selectively diffracting the transverse electric (TE) waveguide mode while suppressing other optical modes in a nanostructured LED, the authors first demonstrate highly directional light emission from a full-area organic LED with a small divergence angle less than 3° and a TE to transverse magnetic (TM) polarization extinction ratio of 13. The highly selective diffraction of only the TE waveguide mode is possible due to the planarization of the device stack by thermal evaporation and solution processing. Using this strategy, directional and polarized emission from a perovskite LED having a current efficiency 2.6 times compared to the reference planar device is further demonstrated. This large enhancement in efficiency in the PeLED is attributed to a larger contribution from the TE waveguide mode resulting from the high refractive index in perovskite materials.

Understanding the Role of Ion Migration in the Operation of Perovskite Light-Emitting Diodes by Transient Measurements

Perovskite light-emitting diodes have been gaining attention in recent years due to their high efficiencies. Despite of the recent progress made in device efficiency, the operation mechanisms of these devices are still not well understood, especially the effects of ion migration. In this work, the role of ion migration is investigated by measuring the transient electroluminescence and current responses, with both the current and efficiency showing a slow response in a time scale of tens of milliseconds. The results of the charge injection dynamics show that the slow response of the current is attributed to the migration and accumulation of halide ions at the anode interface, facilitating hole injection and leading to a strong charge imbalance. Further, the results of the charge recombination dynamics show that the slow response of the efficiency is attributed to enhanced charge injection facilitated by ion migration, which leads to an increased carrier density favoring bimolecular radiative recombination. Through a combined analysis of both charge injection and recombination dynamics, we finally present a comprehensive picture of the role of ion migration in device operation.

Improving Efficiency and Stability in Quasi-2D Perovskite Light-Emitting Diodes by a Multifunctional LiF Interlayer

Owing to the enlarged exciton binding energy and the ability to confine charge carriers compared to their three-dimensional (3D) counterparts, research on quasi-two-dimensional (quasi-2D) perovskite materials and the correlative application in light-emitting diodes (LEDs) has attracted considerable attention. However, high density of defects, exciton emission trapping, and unbalanced charge injection are still the main intractable obstacles to their further development and practical application. Herein, we report an efficient multifunctional interlayer, lithium fluoride (LiF), to boost the performance of green-emitting quasi-2D perovskite LEDs (PeLEDs) by simultaneously overcoming the aforementioned issues. The introduced LiF interlayer not only eliminates the defects at perovskite grain boundaries and the surface by reinforcing the chemical bonds with uncoordinated lead ions but also restrains the emission of perovskite from quenching triggered by the electron transport layer and reduces excess electron injections to effectively balance carriers in the device. As a result, the resulting green quasi-2D PeLED shows a maximum external quantum efficiency of 16.35%, which is the best value obtained for quasi-2D perovskite-based LEDs reported so far, with simultaneous improvement in the operating lifetime of the device.

Surface-Plasmon-Enhanced Perovskite Light-Emitting Diodes

Perovskite light-emitting diodes (PeLEDs) have attracted considerable attention because of their potential in display and lighting applications. To promote commercialization of PeLEDs, it is important to improve the external quantum efficiency of the devices, which depends on their internal quantum efficiency (IQE) and light extraction efficiency. Optical simulations have revealed that 20-50% of the light generated in the device will be lost to surface plasmon (SP) modes formed in the metal/dielectric interfaces. Therefore, extracting the optical energy in SP modes to the air will greatly increase the light extraction efficiency of PeLEDs. In addition, the SPs can accelerate radiative recombination of the emitter via near-field effects. Thus, the IQE of a PeLED can also be enhanced by SP manipulation. In this review, first, general concepts of the SPs and how they can enhance the efficiency of LEDs are introduced. Then recent progresses in SP-enhanced emission of perovskite films and LEDs are systematically reviewed. After that, the challenges and opportunities of the SP-enhanced PeLEDs are shown, followed by an outlook of further development of the SPs in perovskite optoelectronic devices.

Dimensional Tailoring of Ultrahigh Vacuum Annealing-Assisted Quantum Wells for the Efficiency Enhancement of Perovskite Light-Emitting Diodes

Quasi-two-dimensional (Q-2D) perovskites featured with multidimensional quantum wells (QWs) have been the main candidates for optoelectronic applications. However, excessive low-dimensional perovskites are unfavorable to the device efficiency due to the phonon-exciton interaction and the inclusion of insulating large organic cations. Herein, the formation of low-dimensional QWs is suppressed by removing the organic cation 1-naphthylmethylamine iodide (NMAI) through ultrahigh vacuum (UHV) annealing. Perovskite light-emitting diode (PLED) devices based on films annealed with optimized UHV conditions show a higher external quantum efficiency (EQE) of 13.0% and wall-plug efficiency of 11.1% compared to otherwise identical devices with films annealed in a glovebox.

Rational Interface Engineering for Efficient Flexible Perovskite Light-Emitting Diodes

Although perovskite light-emitting diodes (PeLEDs) are promising for next-generation displays and lighting, their efficiency is still considerably below that of conventional inorganic and organic counterparts. Significant efforts in various aspects of the electroluminescence process are required to achieve high-performance PeLEDs. Here, we present an improved flexible PeLED structure based on the rational interface engineering for energy-efficient photon generation and enhanced light outcoupling. The interface-stimulated crystallization and defect passivation of the perovskite emitter are synergistically realized by tuning the underlying interlayer, leading to the suppression of trap-mediated nonradiative recombination losses. Besides approaching highly emissive perovskite layers, the outcoupling of trapped light is also enhanced by combining the silver nanowires-based electrode with quasi-random nanopatterns on flexible plastic substrate. Upon the collective optimization of the device structure, a record external quantum efficiency of 24.5% is achieved for flexible PeLEDs based on green-emitting CsPbBr₃ perovskite.

Boosting Efficiency and Curtailing the Efficiency Roll-Off in Green Perovskite Light-Emitting Diodes via Incorporating Ytterbium as Cathode Interface Layer

Perovskite light-emitting diodes (PeLEDs) exhibit high external quantum efficiencies (EQEs), emerging as a next-generation lighting and display technology. Nevertheless, they suffer from severe efficiency roll-off at high luminance, particularly in the case of blue and green emissions, which is one of the major bottlenecks in their industrial applications. Here, we attack this problem using a rare-earth metal, Yb, as cathode interface layer (CIL) for green PeLEDs. By adopting a new device configuration of ITO/TFB/FA-based quasi-2D perovskite/TPBi/Yb/Ag, we achieved a peak current efficiency (CE) of 22.3 cd/A with a corresponding EQE of 5.28% and a high maximum luminance of 19 160 cd/m². Importantly, the maximum CE of 22.0 cd/A at 2000 cd/m² slightly decreased to 16.8 cd/A at 5000 cd/m² and maintained a still-decent value of 12.0 cd/A at a high luminance of 10 000 cd/m², exhibiting a remarkably low efficiency roll-off. Our Yb-incorporated devices significantly outperformed the PeLEDs containing conventional CILs, including Mg and Liq, in terms of peak efficiency, efficiency roll-off, and operational lifetime. We attribute this encouraging performance to barrier-free, efficient electron injection enabled by the low work function of Yb (2.6 eV), which led to a high electron current, nearly approaching the hole current in hole-dominant PeLEDs, as confirmed by the single-carrier device measurements. In addition, we also present Yb-incorporated PeLEDs containing Cs-based quasi-2D perovskite as the emissive layer, which displayed an impressive CE of 51.3 cd/A with a corresponding EQE of 16.4% and a maximum luminance of 14 240 cd/m², and still demonstrated a reduced efficiency roll-off comparing to that of the Liq-based equivalent. These results unveil the inspiring prospects of Yb as an efficient CIL for PeLEDs toward high efficiency with curtailed roll-off.

High-Performance Green Light-Emitting Diodes Based on MAPbBr3 with π-Conjugated Ligand

The morphology, crystal size, and trap density of perovskite films significantly affect the luminescent properties of perovskite light-emitting diodes (PeLEDs). Recently, numerous studies have been conducted on ligands that surround the surface of perovskite crystals and passivate the trap sites to improve the performance of PeLEDs. In this study, a 4-aminobenzonitrile (ABN) ligand improved the performance of methylammonium lead bromide (MAPbBr₃)-based PeLEDs by reducing the MAPbBr₃ crystal size to the nanoscale and reducing the trap density. Moreover, the properties of PeLEDs with ABN were further improved using a surface-modified hole-transport layer (HTL) with a hydrophilic polymer. Finally, a bright green PeLED was fabricated, which exhibited the maximum luminance of 3350 cd/m² with an external quantum efficiency of 8.85%. Therefore, it is believed that the use of proper ligands for the perovskite layer and the optimization of the charge-transport layer have great potential for the development of high-performance PeLEDs.

Slot-Die-Printed Two-Dimensional ZrS3 Charge Transport Layer for Perovskite Light-Emitting Diodes

Liquid-phase exfoliation of zirconium trisulfide (ZrS₃) was used to produce stable and ready-to-use inks for solution-processed semiconductor thin-film deposition. Ribbon-like layered crystals of ZrS₃ were produced by the chemical vapor transport method and were then exfoliated in three different solvents: dimethylformamide, ethanol, and isopropyl alcohol. The resulting ZrS₃ dispersions were compared for stability and the ability to form continuous films on top of the perovskite layer in light-emitting diodes with the ITO/PEDOT:PSS/MAPbBr₃/2D-ZrS₃/LiF/Al structure. Film deposition was performed by using either spray or slot-die coating methods. The slot-die coating route proved to produce better and more uniform films with respect to spray coating. We found that the 2D ZrS₃ electron injection layer (EIL) stabilized the interface between the perovskite and LiF/Al cathode, reducing the turn-on voltage to 2.8 V and showing a luminance that does not degrade during voltage sweep. On the other hand, EIL-free devices show electroluminescence on the first voltage sweep that reduces almost to zero in the subsequent sweeps. Combining physical device simulation and density functional theory calculation, we are able to explain these results in terms of lowering the electron injection barrier at the cathode.

Improved Efficiency of Perovskite Light-Emitting Diodes Using a Three-Step Spin-Coated CH3NH3PbBr3 Emitter and a PEDOT:PSS/MoO3-Ammonia Composite Hole Transport Layer

High efficiency perovskite light-emitting diodes (PeLEDs) using PEDOT:PSS/MoO₃-ammonia composite hole transport layers (HTLs) with different MoO₃-ammonia ratios were prepared and characterized. For PeLEDs with one-step spin-coated CH₃NH₃PbBr₃ emitter, an optimal MoO₃-ammonia volume ratio (0.02) in PEDOT:PSS/MoO₃-ammonia composite HTL presented a maximum luminance of 1082 cd/m² and maximum current efficiency of 0.7 cd/A, which are 82% and 94% higher than those of the control device using pure PEDOT:PSS HTL respectively. It can be explained by that the optimized amount of MoO₃-ammonia in the composite HTLs cannot only facilitate hole injection into CH₃NH₃PbBr₃ through reducing the contact barrier, but also suppress the exciton quenching at the HTL/CH₃NH₃PbBr₃ interface. Three-step spin coating method was further used to obtain uniform and dense CH₃NH₃PbBr₃ films, which lead to a maximum luminance of 5044 cd/m² and maximum current efficiency of 3.12 cd/A, showing enhancement of 750% and 767% compared with the control device respectively. The significantly improved efficiency of PeLEDs using three-step spin-coated CH₃NH₃PbBr₃ film and an optimum PEDOT:PSS/MoO₃-ammonia composite HTL can be explained by the enhanced carrier recombination through better hole injection and film morphology optimization, as well as the reduced exciton quenching at HTL/CH₃NH₃PbBr₃ interface. These results present a promising strategy for the device engineering of high efficiency PeLEDs.