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Qu J, Cheng H, Lan H, Zheng B, Luo Z, Yang X, Yi X, Wu G, Chen S, Pan A. Space-Confined Growth of Ultrathin P-Type GeTe Nanosheets for Broadband Photodetectors. Small 2024:e2309391. [PMID: 38456381 DOI: 10.1002/smll.202309391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Revised: 02/18/2024] [Indexed: 03/09/2024]
Abstract
As p-type phase-change degenerate semiconductors, crystalline and amorphous germanium telluride (GeTe) exhibit metallic and semiconducting properties, respectively. However, the massive structural defects and strong interface scattering in amorphous GeTe films significantly reduce their performance. In this work, two-dimensional (2D) p-type GeTe nanosheets are synthesized via a specially designed space-confined chemical vapor deposition (CVD) method, with the thickness of the GeTe nanosheets reduced to 1.9 nm. The space-confined CVD method improves the crystallinity of ultrathin GeTe by lowering the partial pressure of the reactant gas, resulting in GeTe nanosheets with excellent p-type semiconductor properties, such as a satisfactory on/off ratio of 105 . Temperature-dependent electrical measurements demonstrate that variable-range hopping and optical-phonon-assisted hopping mechanisms dominate transport behavior at low and high temperatures, respectively. GeTe devices exhibit significantly high responsivity (6589 and 2.2 A W-1 at 633 and 980 nm, respectively) and detectivity (1.67 × 1011 and 1.3 × 108 Jones at 633 and 980 nm, respectively), making them feasible for broadband photodetectors in the visible to near-infrared range. Furthermore, the fabricated GeTe/WS2 diode exhibits a rectification ratio of 103 at zero gate voltage. These satisfactory p-type semiconductor properties demonstrate that ultrathin GeTe exhibits enormous potential for applications in optoelectronic interconnection circuits.
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Affiliation(s)
- Junyu Qu
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Haodong Cheng
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Huiping Lan
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Biyuan Zheng
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Ziyu Luo
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Xin Yang
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Xiao Yi
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Guangcheng Wu
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Shula Chen
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Anlian Pan
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
- School of Physics and Electronics, Hunan Normal University, Changsha, Hunan, 410081, P. R. China
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Liu Y, Liu J, Deng C, Wang B, Xia B, Liang X, Yang Y, Li S, Wang X, Li L, Lan X, Fei P, Zhang J, Gao L, Tang J. Planar Cation Passivation on Colloidal Quantum Dots Enables High-Performance 0.35-1.8 µm Broadband TFT Imager. Adv Mater 2024:e2313811. [PMID: 38358302 DOI: 10.1002/adma.202313811] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2023] [Revised: 02/05/2024] [Indexed: 02/16/2024]
Abstract
Solution-processed colloidal quantum dots (CQDs) are promising candidates for broadband photodetectors from visible light to shortwave infrared (SWIR). However, large-size PbS CQDs sensitive to longer SWIR are mainly exposed with nonpolar (100) facets on the surface, which lack robust passivation strategies. Herein, an innovative passivation strategy that employs planar cation, is introduced to enable face-to-face coupling on (100) facets and strengthen halide passivation on (111) facets. The defect density of CQDs film (Eg ≈ 0.74 eV) is reduced from 2.74 × 1015 to 1.04 × 1015 cm-3 , coupled with 0.1 eV reduction in the activation energy of defects. The resultant CQDs photodiodes exhibit a low dark current density of 14 nA cm-2 with a high external quantum efficiency (EQE) of 62%, achieving a linear dynamic range of 98 dB, a -3dB bandwidth of 103 kHz and a detectivity of 4.7 × 1011 Jones. The comprehensive performance of the CQDs photodiodes outperforms previously reported CQDs photodiodes operating at >1.6 µm. By monolithically integrated with thin-film transistor (TFT) readout circuit, the broadband CQDs imager covering 0.35-1.8 µm realizes the functions including silicon wafer perspectivity and material discrimination, showing its potential for wide range of applications.
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Affiliation(s)
- Yuxuan Liu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
| | - Jing Liu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
- Optics Valley Laboratory, 1037 Luoyu Road, Wuhan, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute, Huazhong University of Science and Technology, 225 Chaoyang New Street, Wenzhou, 325035, P. R. China
| | - Chengjie Deng
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
| | - Bo Wang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
| | - Bing Xia
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
| | - Xinyi Liang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
| | - Yang Yang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
| | - Shengman Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Xihua Wang
- Department of Electrical and Computer Engineering, University of Alberta, Edmonton, T6G 2V4, Canada
| | - Luying Li
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
| | - Xinzheng Lan
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
- Optics Valley Laboratory, 1037 Luoyu Road, Wuhan, 430074, P. R. China
| | - Peng Fei
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
| | - Jianbing Zhang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
- Optics Valley Laboratory, 1037 Luoyu Road, Wuhan, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute, Huazhong University of Science and Technology, 225 Chaoyang New Street, Wenzhou, 325035, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, Guangdong, 518057, China
| | - Liang Gao
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
- Optics Valley Laboratory, 1037 Luoyu Road, Wuhan, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute, Huazhong University of Science and Technology, 225 Chaoyang New Street, Wenzhou, 325035, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, Guangdong, 518057, China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
- Optics Valley Laboratory, 1037 Luoyu Road, Wuhan, 430074, P. R. China
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Jiang X, Li H, Ma J, Li H, Ma X, Tang Y, Li J, Chi X, Deng Y, Zeng S, Liu Z. Role of Type VI secretion system in pathogenic remodeling of host gut microbiota during Aeromonas veronii infection. ISME J 2024; 18:wrae053. [PMID: 38531781 PMCID: PMC11014884 DOI: 10.1093/ismejo/wrae053] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/30/2023] [Revised: 01/31/2024] [Accepted: 03/21/2024] [Indexed: 03/28/2024]
Abstract
Intestinal microbial disturbance is a direct cause of host disease. The bacterial Type VI secretion system (T6SS) often plays a crucial role in the fitness of pathogenic bacteria by delivering toxic effectors into target cells. However, its impact on the gut microbiota and host pathogenesis is poorly understood. To address this question, we characterized a new T6SS in the pathogenic Aeromonas veronii C4. First, we validated the secretion function of the core machinery of A. veronii C4 T6SS. Second, we found that the pathogenesis and colonization of A. veronii C4 is largely dependent on its T6SS. The effector secretion activity of A. veronii C4 T6SS not only provides an advantage in competition among bacteria in vitro, but also contributes to occupation of an ecological niche in the nutritionally deficient and anaerobic environment of the host intestine. Metagenomic analysis showed that the T6SS directly inhibits or eliminates symbiotic strains from the intestine, resulting in dysregulated gut microbiome homeostasis. In addition, we identified three unknown effectors, Tse1, Tse2, and Tse3, in the T6SS, which contribute to T6SS-mediated bacterial competition and pathogenesis by impairing targeted cell integrity. Our findings highlight that T6SS can remodel the host gut microbiota by intricate interplay between T6SS-mediated bacterial competition and altered host immune responses, which synergistically promote pathogenesis of A. veronii C4. Therefore, this newly characterized T6SS could represent a general interaction mechanism between the host and pathogen, and may offer a potential therapeutic target for controlling bacterial pathogens.
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Affiliation(s)
- Xiaoli Jiang
- School of Life and Health Sciences, Hainan University, Haikou 570228, China
| | - Hanzeng Li
- School of Life and Health Sciences, Hainan University, Haikou 570228, China
| | - Jiayue Ma
- School of Life and Health Sciences, Hainan University, Haikou 570228, China
| | - Hong Li
- School of Life and Health Sciences, Hainan University, Haikou 570228, China
| | - Xiang Ma
- School of Life and Health Sciences, Hainan University, Haikou 570228, China
| | - Yanqiong Tang
- School of Life and Health Sciences, Hainan University, Haikou 570228, China
| | - Juanjuan Li
- School of Life and Health Sciences, Hainan University, Haikou 570228, China
| | - Xue Chi
- School of Life and Health Sciences, Hainan University, Haikou 570228, China
| | - Yong Deng
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Sheng Zeng
- Susheng Biotech (Hainan) Co., Ltd, Haikou 570228, China
| | - Zhu Liu
- School of Life and Health Sciences, Hainan University, Haikou 570228, China
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He Z, Peng C, Guo R, Chen B, Li X, Zhu X, Zhang J, Liang W, Wang L. High-Efficiency and Emission-Tunable Inorganic Blue Perovskite Light-Emitting Diodes Based on Vacuum Deposition. Small 2024; 20:e2305379. [PMID: 37658512 DOI: 10.1002/smll.202305379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2023] [Revised: 07/31/2023] [Indexed: 09/03/2023]
Abstract
The fabrication of perovskite light-emitting diodes (PeLEDs) with vacuum deposition shows great potential and commercial value in realizing large-area display panel manufacturing. However, the electroluminescence (EL) performance of vacuum-deposited PeLEDs still lags behind the counterparts fabricated by solution process, especially in the field of blue PeLEDs. Here, the fabrication of high-quality CsPbBr3- x Clx film through tri-source co-evaporation is reported to achieve high photoluminescence quantum yield (PLQY). Compared with the conventional traditional dual-source co-evaporation, the tri-source co-evaporation method allows for freely adjustable elemental ratios, enabling the introduction of the lattice-matched Cs4 Pb(Br/Cl)6 phase with the quantum-limited effect into the inorganic CsPb(Br/Cl)3 emitter. By adjusting the phase distribution, the surface defects of the emitter can be effectively reduced, leading to better blue emission and film quality. Further, the effects of Cs/Pb ratio and Br/Cl ratio on the PLQY and carrier recombination dynamics of perovskite films are investigated. By optimizing the deposition rate of each precursor source, spectrally stable blue PeLEDs are achieved with tunable emission ranging from 468 to 488 nm. Particularly, the PeLEDs with an EL peak at 488 nm show an external quantum efficiency (EQE) of 4.56%, which is the highest EQE value for mixed-halide PeLEDs fabricated by vacuum deposition.
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Affiliation(s)
- Zhiyuan He
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Chencheng Peng
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Runda Guo
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Ben Chen
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Xin Li
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Xiangyu Zhu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Jian Zhang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Wenxi Liang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Lei Wang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
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5
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Wang X, Liu J, Liu H, Zhou Z, Qin Z, Cao J. The Influence of Laser Process Parameters on the Adhesion Strength between Electroless Copper and Carbon Fiber Composites Determined Using Response Surface Methodology. Micromachines (Basel) 2023; 14:2168. [PMID: 38138337 PMCID: PMC10744980 DOI: 10.3390/mi14122168] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2023] [Revised: 11/19/2023] [Accepted: 11/21/2023] [Indexed: 12/24/2023]
Abstract
Laser process technology provides a feasible method for directly manufacturing surface-metallized carbon fiber composites (CFCs); however, the laser's process parameters strongly influence on the adhesion strength between electroless copper and CFCs. Here, a nanosecond ultraviolet laser was used to fabricate electroless copper on the surface of CFCs. In order to achieve good adhesion strength, four key process parameters, namely, the laser power, scanning line interval, scanning speed, and pulse frequency, were optimized experimentally using response surface methodology, and a central composite design was utilized to design the experiments. An analysis of variance was conducted to evaluate the adequacy and significance of the developed regression model. Also, the effect of the process parameters on the adhesion strength was determined. The numerical analysis indicated that the optimized laser power, scanning line interval, scanning speed, and pulse frequency were 5.5 W, 48.2 μm, 834.0 mm/s, and 69.5 kHz, respectively. A validation test confirmed that the predicted results were consistent with the actual values; thus, the developed mathematical model can adequately predict responses within the limits of the laser process parameters being used.
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Affiliation(s)
- Xizhao Wang
- Institute of Laser and Intelligent Manufacturing Technology, South-Central Minzu University, Wuhan 430074, China; (X.W.); (H.L.)
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China; (J.L.); (Z.Z.)
| | - Jianguo Liu
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China; (J.L.); (Z.Z.)
| | - Haixing Liu
- Institute of Laser and Intelligent Manufacturing Technology, South-Central Minzu University, Wuhan 430074, China; (X.W.); (H.L.)
| | - Zhicheng Zhou
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China; (J.L.); (Z.Z.)
| | - Zhongli Qin
- School of Electronics and Information Engineering, Hubei University of Science and Technology, Xianning 437100, China;
| | - Jiawen Cao
- School of Electronics and Information Engineering, Hubei University of Science and Technology, Xianning 437100, China;
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Xu L, Ji H, Qiu W, Wang X, Liu Y, Li Y, Li J, Zhang X, Zhang D, Wang J, Tao Y, Li M, Chen R. Enhanced Resonance for Facilitated Modulation of Large-Area Perovskite Films with Stable Photovoltaics. Adv Mater 2023; 35:e2301752. [PMID: 37815114 DOI: 10.1002/adma.202301752] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2023] [Revised: 09/24/2023] [Indexed: 10/11/2023]
Abstract
Upscaling efficient and stable perovskite films is a challenging task in the industrialization of perovskite solar cells partly due to the lack of high-performance hole transport materials (HTMs), which can simultaneously promote hole transport and regulate the quality of perovskite films especially in inverted solar cells. Here, a novel HTM based on N-C = O resonance structure is designed for facilitating the modulation of the crystallization and bottom-surface defects of perovskite films. Benefiting from the resonance interconversion (N-C = O and N+ = C-O- ) in donor-resonance-donor (D-r-D) architecture and interactions with uncoordinated Pb2+ in perovskite, the resulting D-r-D HTM with two donor units exhibits not only excellent hole extraction and transport capacities, but also efficient crystallization modulation of perovskite for high-quality photovoltaic films in large area. The D-r-D HTM-based large-area (1.02 cm2 ) devices exhibit high power conversion efficiencies (PCEs) up to 21.0%. Moreover, the large-area devices have excellent photo-thermal stability, showing only a 2.6% reduction in PCE under continuous AM 1.5G light illumination at elevated temperature (≈65 °C) for over 1320 h without encapsulation.
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Affiliation(s)
- Ligang Xu
- Key Laboratory for Organic Electronics and Information Displays (KLOEID) & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 1037 Geyu Road, Wuhan, Hubei, 430074, China
| | - Haodong Ji
- School of Environment and Energy, Peking University Shenzhen Graduate School, 1120 Lianhua Road, Shenzhen, 518055, China
| | - Wei Qiu
- Key Laboratory for Organic Electronics and Information Displays (KLOEID) & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Xin Wang
- Key Laboratory for Organic Electronics and Information Displays (KLOEID) & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Yan Liu
- Key Laboratory for Organic Electronics and Information Displays (KLOEID) & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Yuanhao Li
- School of Environment and Energy, Peking University Shenzhen Graduate School, 1120 Lianhua Road, Shenzhen, 518055, China
- Department of Civil and Environmental Engineering, Carnegie Mellon University, Pittsburgh, PA, 15213, USA
| | - Jing Li
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 29 Zhongguancun east road, Beijing, 100190, China
| | - Xin Zhang
- Key Laboratory for Organic Electronics and Information Displays (KLOEID) & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Daiquan Zhang
- Key Laboratory for Organic Electronics and Information Displays (KLOEID) & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Jiexue Wang
- College of Chemistry and Life Science, Sichuan Provincial Key Laboratory for Structural Optimization and Application of Functional Molecules, Chengdu Normal University, 4 Baishou Road, Chengdu, 611130, China
| | - Ye Tao
- Key Laboratory for Organic Electronics and Information Displays (KLOEID) & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Meicheng Li
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of New Energy, North China Electric Power University, 2 Beinong Road, Beijing, 102206, China
| | - Runfeng Chen
- Key Laboratory for Organic Electronics and Information Displays (KLOEID) & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
- School of Materials Science and Engineering, Zhejiang Sci-Tech University, Hangzhou, 310018, China
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Zhang C, Fang H, Du W, Zhang D, Qu Y, Tang F, Ding A, Huang K, Peng B, Li L, Huang W. Ultrafast Detection of Monoamine Oxidase A in Live Cells and Clinical Glioma Tissues Using an Affinity Binding-Based Two-Photon Fluorogenic Probe. Angew Chem Int Ed Engl 2023; 62:e202310134. [PMID: 37585321 DOI: 10.1002/anie.202310134] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Revised: 08/13/2023] [Accepted: 08/15/2023] [Indexed: 08/18/2023]
Abstract
Abnormal expression of monoamine oxidase A (MAO-A) has been implicated in the development of human glioma, making MAO-A a promising target for therapy. Therefore, a rapid determination of MAO-A is critical for diagnosis. Through in silico screening of two-photon fluorophores, we discovered that a derivative of N,N-dimethyl-naphthalenamine (pre-mito) can effectively fit into the entrance of the MAO-A cavity. Substitutions on the N-pyridine not only further explore the MAO-A cavity, but also enable mitochondrial targeting ability. The aminopropyl substituted molecule, CD1, showed the fastest MAO-A detection (within 20 s), high MAO-A affinity and selectivity. It was also used for in situ imaging of MAO-A in living cells, enabling a comparison of the MAO-A content in human glioma and paracancerous tissues. Our results demonstrate that optimizing the affinity binding-based fluorogenic probes significantly improves their detection rate, providing a general approach for rapid detection probe design and optimization.
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Affiliation(s)
- Congcong Zhang
- The Institute of Flexible Electronics (IFE, Future Technologies), Xiamen University, Xiamen, 361005, China
| | - Haixiao Fang
- The Institute of Flexible Electronics (IFE, Future Technologies), Xiamen University, Xiamen, 361005, China
- Future Display Institute in Xiamen, Xiamen, 361005, China
| | - Wei Du
- School of Basic Medical Sciences, Anhui Medical University, Hefei, 230032, China
| | - Duoteng Zhang
- The Institute of Flexible Electronics (IFE, Future Technologies), Xiamen University, Xiamen, 361005, China
| | - Yunwei Qu
- The Institute of Flexible Electronics (IFE, Future Technologies), Xiamen University, Xiamen, 361005, China
| | - Fang Tang
- The Institute of Flexible Electronics (IFE, Future Technologies), Xiamen University, Xiamen, 361005, China
- Future Display Institute in Xiamen, Xiamen, 361005, China
| | - Aixiang Ding
- The Institute of Flexible Electronics (IFE, Future Technologies), Xiamen University, Xiamen, 361005, China
| | - Kai Huang
- Future Display Institute in Xiamen, Xiamen, 361005, China
| | - Bo Peng
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, Xi'an, 710072, China
- Wuhan National Laboratory for Optoelectronics - Advanced Biomedical Imaging Facility, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Lin Li
- The Institute of Flexible Electronics (IFE, Future Technologies), Xiamen University, Xiamen, 361005, China
- Future Display Institute in Xiamen, Xiamen, 361005, China
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Wei Huang
- The Institute of Flexible Electronics (IFE, Future Technologies), Xiamen University, Xiamen, 361005, China
- Future Display Institute in Xiamen, Xiamen, 361005, China
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, Xi'an, 710072, China
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Chen C, Ran C, Yao Q, Wang J, Guo C, Gu L, Han H, Wang X, Chao L, Xia Y, Chen Y. Screen-Printing Technology for Scale Manufacturing of Perovskite Solar Cells. Adv Sci (Weinh) 2023; 10:e2303992. [PMID: 37541313 PMCID: PMC10558701 DOI: 10.1002/advs.202303992] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2023] [Revised: 07/05/2023] [Indexed: 08/06/2023]
Abstract
As a key contender in the field of photovoltaics, third-generation thin-film perovskite solar cells (PSCs) have gained significant research and investment interest due to their superior power conversion efficiency (PCE) and great potential for large-scale production. For commercialization consideration, low-cost and scalable fabrication is of primary importance for PSCs, and the development of the applicable film-forming techniques that meet the above requirements plays a key role. Currently, large-area perovskite films are mainly produced by printing techniques, such as slot-die coating, inkjet printing, blade coating, and screen-printing. Among these techniques, screen printing offers a high degree of functional layer compatibility, pattern design flexibility, and large-scale ability, showing great promise. In this work, the advanced progress on applying screen-printing technology in fabricating PSCs from technique fundamentals to practical applications is presented. The fundamentals of screen-printing technique are introduced and the state-of-the-art studies on screen-printing different functional layers in PSCs and the control strategies to realize fully screen-printed PSCs are summarized. Moreover, the current challenges and opportunities faced by screen-printed perovskite devices are discussed. This work highlights the critical significance of high throughput screen-printing technology in accelerating the commercialization course of PSCs products.
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Affiliation(s)
- Changshun Chen
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE)Northwestern Polytechnical UniversityXi'an710072P. R. China
- Key Laboratory of Flexible Electronics (KLOFE) and Institution of Advanced Materials (IAM)School of Flexible Electronics (Future Technologies)Nanjing Tech University (NanjingTech)NanjingJiangsu211816P. R. China
| | - Chenxin Ran
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE)Northwestern Polytechnical UniversityXi'an710072P. R. China
| | - Qing Yao
- Key Laboratory of Flexible Electronics (KLOFE) and Institution of Advanced Materials (IAM)School of Flexible Electronics (Future Technologies)Nanjing Tech University (NanjingTech)NanjingJiangsu211816P. R. China
| | - Jinpei Wang
- Key Laboratory of Flexible Electronics (KLOFE) and Institution of Advanced Materials (IAM)School of Flexible Electronics (Future Technologies)Nanjing Tech University (NanjingTech)NanjingJiangsu211816P. R. China
| | - Chunyu Guo
- Key Laboratory of Flexible Electronics (KLOFE) and Institution of Advanced Materials (IAM)School of Flexible Electronics (Future Technologies)Nanjing Tech University (NanjingTech)NanjingJiangsu211816P. R. China
| | - Lei Gu
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE)Northwestern Polytechnical UniversityXi'an710072P. R. China
| | - Huchen Han
- Key Laboratory of Flexible Electronics (KLOFE) and Institution of Advanced Materials (IAM)School of Flexible Electronics (Future Technologies)Nanjing Tech University (NanjingTech)NanjingJiangsu211816P. R. China
| | - Xiaobo Wang
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE)Northwestern Polytechnical UniversityXi'an710072P. R. China
| | - Lingfeng Chao
- Key Laboratory of Flexible Electronics (KLOFE) and Institution of Advanced Materials (IAM)School of Flexible Electronics (Future Technologies)Nanjing Tech University (NanjingTech)NanjingJiangsu211816P. R. China
| | - Yingdong Xia
- Key Laboratory of Flexible Electronics (KLOFE) and Institution of Advanced Materials (IAM)School of Flexible Electronics (Future Technologies)Nanjing Tech University (NanjingTech)NanjingJiangsu211816P. R. China
| | - Yonghua Chen
- Key Laboratory of Flexible Electronics (KLOFE) and Institution of Advanced Materials (IAM)School of Flexible Electronics (Future Technologies)Nanjing Tech University (NanjingTech)NanjingJiangsu211816P. R. China
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Zhang X, Zhou Y, Chen M, Wang D, Chao L, Lv Y, Zhang H, Xia Y, Li M, Hu Z, Chen Y. Novel Bilayer SnO 2 Electron Transport Layers with Atomic Layer Deposition for High-Performance α-FAPbI 3 Perovskite Solar Cells. Small 2023; 19:e2303254. [PMID: 37226363 DOI: 10.1002/smll.202303254] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/29/2023] [Indexed: 05/26/2023]
Abstract
Perovskite solar cells (PSCs) based on the SnO2 electron transport layer (ETL) have achieved remarkable photovoltaic efficiency. However, the commercial SnO2 ETLs show various shortcomings. The SnO2 precursor is prone to agglomeration, resulting in poor morphology with numerous interface defects. Additionally, the open circuit voltage (Voc ) would be constrained by the energy level mismatch between the SnO2 and the perovskite. And, few studies designed SnO2 -based ETLs to promote crystal growth of PbI2 , a crucial prerequisite for obtaining high-quality perovskite films via the two-step method. Herein, we proposed a novel bilayer SnO2 structure that combined the atomic layer deposition (ALD) and sol-gel solution to well address the aforementioned issues. Due to the unique conformal effect of ALD-SnO2 , it can effectively modulate the roughness of FTO substrate, enhance the quality of ETL, and induce the growth of PbI2 crystal phase to develop the crystallinity of perovskite layer. Furthermore, a created built-in field of the bilayer SnO2 can help to overcome the electron accumulation at the ETL/perovskite interface, leading to a higher Voc and fill factor. Consequently, the efficiency of PSCs with ionic liquid solvent increases from 22.09% to 23.86%, maintaining 85% initial efficiency in a 20% humidity N2 environment for 1300 h.
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Affiliation(s)
- Xuecong Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, China
| | - Yan Zhou
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, China
| | - Muyang Chen
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, China
| | - Dianxi Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, China
| | - Lingfeng Chao
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, China
| | - Yifan Lv
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, China
| | - Hui Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, China
| | - Yingdong Xia
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, China
| | - Mingjie Li
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen, Guangdong, 518057, China
| | - Zhelu Hu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, China
| | - Yonghua Chen
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, China
- Optics Valley Laboratory, Wuhan, 430074, China
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10
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Ali W, Liu Y, Huang M, Xie Y, Li Z. Temperature-Dependent Phonon Scattering and Photoluminescence in Vertical MoS 2/WSe 2 Heterostructures. Nanomaterials (Basel) 2023; 13:2349. [PMID: 37630934 PMCID: PMC10459064 DOI: 10.3390/nano13162349] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2023] [Revised: 08/08/2023] [Accepted: 08/09/2023] [Indexed: 08/27/2023]
Abstract
Transition metal dichalcogenide (TMD) monolayers and their heterostructures have attracted considerable attention due to their distinct properties. In this work, we performed a systematic investigation of MoS2/WSe2 heterostructures, focusing on their temperature-dependent Raman and photoluminescence (PL) characteristics in the range of 79 to 473 K. Our Raman analysis revealed that both the longitudinal and transverse modes of the heterostructure exhibit linear shifts towards low frequencies with increasing temperatures. The peak position and intensity of PL spectra also showed pronounced temperature dependency. The activation energy of thermal-quenching-induced PL emissions was estimated as 61.5 meV and 82.6 meV for WSe2 and MoS2, respectively. Additionally, we observed that the spectral full width at half maximum (FWHM) of Raman and PL peaks increases as the temperature increases, and these broadenings can be attributed to the phonon interaction and the expansion of the heterostructure's thermal coefficients. This work provides valuable insights into the interlayer coupling of van der Waals heterostructures, which is essential for understanding their potential applications in extreme temperatures.
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Affiliation(s)
- Wajid Ali
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; (W.A.)
| | - Ye Liu
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; (W.A.)
| | - Ming Huang
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; (W.A.)
| | - Yunfei Xie
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; (W.A.)
| | - Ziwei Li
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; (W.A.)
- Wuhan National Laboratory for Optoelectronics, School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
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11
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Wu X, Kong D, Hao S, Zeng Y, Yu X, Zhang B, Dai M, Liu S, Wang J, Ren Z, Chen S, Sang J, Wang K, Zhang D, Liu Z, Gui J, Yang X, Xu Y, Leng Y, Li Y, Song L, Tian Y, Li R. Generation of 13.9-mJ Terahertz Radiation from Lithium Niobate Materials. Adv Mater 2023; 35:e2208947. [PMID: 36932897 DOI: 10.1002/adma.202208947] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2022] [Revised: 03/12/2023] [Indexed: 06/09/2023]
Abstract
Extremely strong-field terahertz (THz) radiation in free space has compelling applications in nonequilibrium condensed matter state regulation, all-optical THz electron acceleration and manipulation, THz biological effects, etc. However, these practical applications are constrained by the absence of high-intensity, high-efficiency, high-beam-quality, and stable solid-state THz light sources. Here, the generation of single-cycle 13.9-mJ extreme THz pulses from cryogenically cooled lithium niobate crystals and a 1.2% energy conversion efficiency from 800 nm to THz are demonstrated experimentally using the tilted pulse-front technique driven by a home-built 30-fs, 1.2-Joule Ti:sapphire laser amplifier. The focused peak electric field strength is estimated to be 7.5 MV cm-1 . A record of 1.1-mJ THz single-pulse energy at a 450 mJ pump at room temperature is produced and observed that the self-phase modulation of the optical pump can induce THz saturation behavior from the crystals in the substantially nonlinear pump regime. This study lays the foundation for the generation of sub-Joule THz radiation from lithium niobate crystals and will inspire more innovations in extreme THz science and applications.
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Affiliation(s)
- Xiaojun Wu
- School of Electronic and Information Engineering, and School of Cyber Science and Technology, Beihang University, Beijing, 100191, China
- Zhangjiang Laboratory, 100 Haike Road, Shanghai, 201210, China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Deyin Kong
- School of Electronic and Information Engineering, and School of Cyber Science and Technology, Beihang University, Beijing, 100191, China
- Zhangjiang Laboratory, 100 Haike Road, Shanghai, 201210, China
| | - Sibo Hao
- School of Electronic and Information Engineering, and School of Cyber Science and Technology, Beihang University, Beijing, 100191, China
| | - Yushan Zeng
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Xieqiu Yu
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Baolong Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Mingcong Dai
- School of Electronic and Information Engineering, and School of Cyber Science and Technology, Beihang University, Beijing, 100191, China
| | - Shaojie Liu
- School of Electronic and Information Engineering, and School of Cyber Science and Technology, Beihang University, Beijing, 100191, China
| | - Jiaqi Wang
- School of Electronic and Information Engineering, and School of Cyber Science and Technology, Beihang University, Beijing, 100191, China
| | - Zejun Ren
- School of Electronic and Information Engineering, and School of Cyber Science and Technology, Beihang University, Beijing, 100191, China
| | - Sai Chen
- School of Electronic and Information Engineering, and School of Cyber Science and Technology, Beihang University, Beijing, 100191, China
| | - Jianhua Sang
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Kang Wang
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Dongdong Zhang
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Zhongkai Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
- ShanghaiTech Laboratory for Topological Physics, Shanghai, 201210, China
| | - Jiayan Gui
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Xiaojun Yang
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Yi Xu
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Yuxin Leng
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Yutong Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Liwei Song
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Ye Tian
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Ruxin Li
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
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12
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Shi F, Guo P, Qiao X, Yao G, Zhang T, Lu Q, Wang Q, Wang X, Rikhsibaev J, Wang E, Zhang C, Kwon YW, Woo HY, Wu H, Hou J, Ma D, Armin A, Ma Y, Xia Y. A Nitroxide Radical Conjugated Polymer as an Additive to Reduce Nonradiative Energy Loss in Organic Solar Cells. Adv Mater 2023:e2212084. [PMID: 36924360 DOI: 10.1002/adma.202212084] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/24/2022] [Revised: 02/23/2023] [Indexed: 05/17/2023]
Abstract
Nonfullerene-acceptor-based organic solar cells (NFA-OSCs) are now set off to the 20% power conversion efficiency milestone. To achieve this, minimizing all loss channels, including nonradiative photovoltage losses, seems a necessity. Nonradiative recombination, to a great extent, is known to be an inherent material property due to vibrationally induced decay of charge-transfer (CT) states or their back electron transfer to the triplet excitons. Herein, it is shown that the use of a new conjugated nitroxide radical polymer with 2,2,6,6-tetramethyl piperidine-1-oxyl side groups (GDTA) as an additive results in an improvement of the photovoltaic performance of NFA-OSCs based on different active layer materials. Upon the addition of GDTA, the open-circuit voltage (VOC ), fill factor (FF), and short-circuit current density (JSC ) improve simultaneously. This approach is applied to several material systems including state-of-the-art donor/acceptor pairs showing improvement from 15.8% to 17.6% (in the case of PM6:Y6) and from 17.5% to 18.3% (for PM6:BTP-eC9). Then, the possible reasons behind the observed improvements are discussed. The results point toward the suppression of the CT state to triplet excitons loss channel. This work presents a facile, promising, and generic approach to further improve the performance of NFA-OSCs.
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Affiliation(s)
- Furong Shi
- Organic Semiconductor Materials and Applied Technology Research Centre of Gansu Province, School of Materials Science and Engineering, Lanzhou Jiaotong University, Lanzhou, 730070, P. R. China
| | - Pengzhi Guo
- Organic Semiconductor Materials and Applied Technology Research Centre of Gansu Province, School of Materials Science and Engineering, Lanzhou Jiaotong University, Lanzhou, 730070, P. R. China
- National Green Coating Equipment and Technology Research Centre, Lanzhou Jiaotong University, Lanzhou, 730070, P. R. China
| | - Xianfeng Qiao
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Guo Yao
- National Laboratory of Solid-State Microstructures, School of Physics, and Collaborative Innovation Center for Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Tao Zhang
- State Key Laboratory of Polymer Physics and Chemistry, Beijing National Laboratory for Molecular Sciences CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Qi Lu
- Organic Semiconductor Materials and Applied Technology Research Centre of Gansu Province, School of Materials Science and Engineering, Lanzhou Jiaotong University, Lanzhou, 730070, P. R. China
| | - Qian Wang
- Organic Semiconductor Materials and Applied Technology Research Centre of Gansu Province, School of Materials Science and Engineering, Lanzhou Jiaotong University, Lanzhou, 730070, P. R. China
| | - Xiaofeng Wang
- Organic Semiconductor Materials and Applied Technology Research Centre of Gansu Province, School of Materials Science and Engineering, Lanzhou Jiaotong University, Lanzhou, 730070, P. R. China
| | - Jasurbek Rikhsibaev
- Organic Semiconductor Materials and Applied Technology Research Centre of Gansu Province, School of Materials Science and Engineering, Lanzhou Jiaotong University, Lanzhou, 730070, P. R. China
| | - Ergang Wang
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Göteborg, SE-412 96, Sweden
| | - Chunfeng Zhang
- National Laboratory of Solid-State Microstructures, School of Physics, and Collaborative Innovation Center for Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Young-Wan Kwon
- Department of Chemistry, KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Han Young Woo
- Department of Chemistry, KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Hongbin Wu
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Jianhui Hou
- State Key Laboratory of Polymer Physics and Chemistry, Beijing National Laboratory for Molecular Sciences CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Dongge Ma
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Ardalan Armin
- Sustainable Advanced Materials (Sêr SAM), Department of Physics, Swansea University, Singleton Park, Swansea, SA2 8PP, UK
| | - Yuguang Ma
- Organic Semiconductor Materials and Applied Technology Research Centre of Gansu Province, School of Materials Science and Engineering, Lanzhou Jiaotong University, Lanzhou, 730070, P. R. China
| | - Yangjun Xia
- Organic Semiconductor Materials and Applied Technology Research Centre of Gansu Province, School of Materials Science and Engineering, Lanzhou Jiaotong University, Lanzhou, 730070, P. R. China
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Wu J, Chen H, Li X, Kang G, Lu Y. Correlation coefficient local capping REMD adaptive filtering method for laser interference signal. PLoS One 2022; 17:e0261875. [PMID: 35061729 PMCID: PMC8782343 DOI: 10.1371/journal.pone.0261875] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/21/2021] [Accepted: 12/10/2021] [Indexed: 11/19/2022] Open
Abstract
Considering the issue of noise reduction associated with Laser Doppler Interference (LDI) signal, the paper presented a correlation coefficient local capping robust empirical mode decomposition (REMD) filter algorithm for LDI laser sensor that enables more robust reconstruction of the displacement information from an LDI signal. The performance of the algorithm is studied, and it is shown that the algorithm is capable of removing high-frequency noise. Useful information can be extracted more easily by this method, and the Hilbert phase unwrapping displacement reconstructions method based on this algorithm has been experimentally validated. The experimental results show that the proposed method can improve the frequency separation performance in experiments, and is robust against noise interference.
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Affiliation(s)
- Junfeng Wu
- Key Laboratory of Space Photoelectric Detection and Perception of Ministry of Industry and Information Technology, The College of Astronautics, Nanjing University of Aeronautics and Astronautics, Nanjing, China
| | - Hanyu Chen
- Key Laboratory of Space Photoelectric Detection and Perception of Ministry of Industry and Information Technology, The College of Astronautics, Nanjing University of Aeronautics and Astronautics, Nanjing, China
| | - Xu Li
- Key Laboratory of Space Photoelectric Detection and Perception of Ministry of Industry and Information Technology, The College of Astronautics, Nanjing University of Aeronautics and Astronautics, Nanjing, China
| | - Guohua Kang
- Key Laboratory of Space Photoelectric Detection and Perception of Ministry of Industry and Information Technology, The College of Astronautics, Nanjing University of Aeronautics and Astronautics, Nanjing, China
| | - Yuangang Lu
- Key Laboratory of Space Photoelectric Detection and Perception of Ministry of Industry and Information Technology, The College of Astronautics, Nanjing University of Aeronautics and Astronautics, Nanjing, China
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