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Zhong Y, Yang J, Wang X, Liu Y, Cai Q, Tan L, Chen Y. Inhibition of Ion Migration for Highly Efficient and Stable Perovskite Solar Cells. Adv Mater 2023; 35:e2302552. [PMID: 37067957 DOI: 10.1002/adma.202302552] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2023] [Revised: 04/13/2023] [Indexed: 06/19/2023]
Abstract
In recent years, organic-inorganic halide perovskites are now emerging as the most attractive alternatives for next-generation photovoltaic devices, due to their excellent optoelectronic characteristics and low manufacturing cost. However, the resultant perovskite solar cells (PVSCs) are intrinsically unstable owing to ion migration, which severely impedes performance enhancement, even with device encapsulation. There is no doubt that the investigation of ion migration and the summarization of recent advances in inhibition strategies are necessary to develop "state-of-the-art" PVSCs with high intrinsic stability for accelerated commercialization. This review systematically elaborates on the generation and fundamental mechanisms of ion migration in PVSCs, the impact of ion migration on hysteresis, phase segregation, and operational stability, and the characterizations for ion migration in PVSCs. Then, many related works on the strategies for inhibiting ion migration toward highly efficient and stable PVSCs are summarized. Finally, the perspectives on the current obstacles and prospective strategies for inhibition of ion migration in PVSCs to boost operational stability and meet all of the requirements for commercialization success are summarized.
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Affiliation(s)
- Yang Zhong
- College of Chemistry and Chemical Engineering/Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Jia Yang
- College of Chemistry and Chemical Engineering/Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Xueying Wang
- College of Chemistry and Chemical Engineering/Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Yikun Liu
- College of Chemistry and Chemical Engineering/Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Qianqian Cai
- College of Chemistry and Chemical Engineering/Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Licheng Tan
- College of Chemistry and Chemical Engineering/Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, 226010, China
| | - Yiwang Chen
- College of Chemistry and Chemical Engineering/Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
- National Engineering Research Center for Carbohydrate Synthesis/Key Lab of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, 99 Ziyang Avenue, Nanchang, 330022, China
- College of Chemistry and Chemical Engineering, Gannan Normal University, Ganzhou, 341000, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, 226010, China
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Nikam RD, Lee J, Lee K, Hwang H. Exploring the Cutting-Edge Frontiers of Electrochemical Random Access Memories (ECRAMs) for Neuromorphic Computing: Revolutionary Advances in Material-to- Device Engineering. Small 2023; 19:e2302593. [PMID: 37300356 DOI: 10.1002/smll.202302593] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2023] [Revised: 05/23/2023] [Indexed: 06/12/2023]
Abstract
Advanced materials and device engineering has played a crucial role in improving the performance of electrochemical random access memory (ECRAM) devices. ECRAM technology has been identified as a promising candidate for implementing artificial synapses in neuromorphic computing systems due to its ability to store analog values and its ease of programmability. ECRAM devices consist of an electrolyte and a channel material sandwiched between two electrodes, and the performance of these devices depends on the properties of the materials used. This review provides a comprehensive overview of material engineering strategies to optimize the electrolyte and channel materials' ionic conductivity, stability, and ionic diffusivity to improve the performance and reliability of ECRAM devices. Device engineering and scaling strategies are further discussed to enhance ECRAM performance. Last, perspectives on the current challenges and future directions in developing ECRAM-based artificial synapses in neuromorphic computing systems are provided.
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Affiliation(s)
- Revannath Dnyandeo Nikam
- Center for Single Atom-based Semiconductor Device, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
- Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
| | - Jongwon Lee
- Center for Single Atom-based Semiconductor Device, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
- Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
| | - Kyumin Lee
- Center for Single Atom-based Semiconductor Device, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
- Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
| | - Hyunsang Hwang
- Center for Single Atom-based Semiconductor Device, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
- Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
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Guo J, Wang B, Lu D, Wang T, Liu T, Wang R, Dong X, Zhou T, Zheng N, Fu Q, Xie Z, Wan X, Xing G, Chen Y, Liu Y. Ultra-Long Carrier Lifetime Exceeding 20 μs in Lead Halide Perovskite Film Enable Efficient Solar Cells. Adv Mater 2023:e2212126. [PMID: 37163976 DOI: 10.1002/adma.202212126] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Subscribe] [Scholar Register] [Received: 12/26/2022] [Revised: 03/19/2023] [Indexed: 05/12/2023]
Abstract
The carrier lifetime is one of the key parameters for perovskite solar cells. However, it's still a great challenge to achieve long carrier lifetimes in perovskite films that are comparable with perovskite crystals owning to the large trap density resulting from the unavoidable defects in grain boundaries and surfaces. Here, by regulating the electronic structure with ou r developed 2-thiopheneformamidinium bromide (ThFABr) combined with the unique film structure of 2D perovskite layer caped 2D/3D polycrystalline perovskite film, w e achieved an ultra-long carrier lifetime exceeding 20 μs and carrier diffusion lengths longer than 6.5 μm. These excellent properties enable the ThFA-based devices to yield a champion efficiency of 24.69% with a minimum VOC loss of 0.33 V. The unencapsulated device retained ∼95% of its initial efficiency after 1180 h by max power point (MPP) tracking under continuous light illumination. Our work provides important implications for structured 2D/(2D/3D) perovskite films combined with unique FA-based spacers to achieve ultralong carrier lifetime for high-performance PSCs and other optoelectronic applecations. This article is protected by copyright. All rights reserved.
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Affiliation(s)
- Jiahao Guo
- The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry and Renewable Energy Conversion and Storage Center (RECAST), Nankai University, Tianjin, 300071, China
| | - Bingzhe Wang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau, 999078, China
| | - Di Lu
- The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry and Renewable Energy Conversion and Storage Center (RECAST), Nankai University, Tianjin, 300071, China
| | - Ting Wang
- The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry and Renewable Energy Conversion and Storage Center (RECAST), Nankai University, Tianjin, 300071, China
| | - Tingting Liu
- The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry and Renewable Energy Conversion and Storage Center (RECAST), Nankai University, Tianjin, 300071, China
| | - Rui Wang
- The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry and Renewable Energy Conversion and Storage Center (RECAST), Nankai University, Tianjin, 300071, China
| | - Xiyue Dong
- The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry and Renewable Energy Conversion and Storage Center (RECAST), Nankai University, Tianjin, 300071, China
| | - Tong Zhou
- The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry and Renewable Energy Conversion and Storage Center (RECAST), Nankai University, Tianjin, 300071, China
| | - Nan Zheng
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Qiang Fu
- The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry and Renewable Energy Conversion and Storage Center (RECAST), Nankai University, Tianjin, 300071, China
| | - Zengqi Xie
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Xiangjian Wan
- The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry and Renewable Energy Conversion and Storage Center (RECAST), Nankai University, Tianjin, 300071, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau, 999078, China
| | - Yongsheng Chen
- The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry and Renewable Energy Conversion and Storage Center (RECAST), Nankai University, Tianjin, 300071, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China
| | - Yongsheng Liu
- The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry and Renewable Energy Conversion and Storage Center (RECAST), Nankai University, Tianjin, 300071, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China
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Lin YD, Lu CW, Su HC. Long-Wavelength Light-Emitting Electrochemical Cells: Materials and Device Engineering. Chemistry 2023; 29:e202202985. [PMID: 36346637 DOI: 10.1002/chem.202202985] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/24/2022] [Revised: 11/05/2022] [Accepted: 11/07/2022] [Indexed: 11/11/2022]
Abstract
Long-wavelength light-emitting electrochemical cells (LECs) are potential deep-red and near infrared light sources with solution-processable simple device architecture, low-voltage operation, and compatibility with inert metal electrodes. Many scientific efforts have been made to material design and device engineering of the long-wavelength LECs over the past two decades. The materials designed the for long-wavelength LECs cover ionic transition metal complexes, small molecules, conjugated polymers, and perovskites. On the other hand, device engineering techniques, including spectral modification by adjusting microcavity effect, light outcoupling enhancement, energy down-conversion from color conversion layers, and adjusting intermolecular interactions, are also helpful in improving the device performance of long-wavelength LECs. In this review, recent advances in the long-wavelength LECs are reviewed from the viewpoints of materials and device engineering. Finally, discussions on conclusion and outlook indicate possible directions for future developments of the long-wavelength LECs. This review would like to pave the way for the researchers to design materials and device engineering techniques for the long-wavelength LECs in the applications of displays, bio-imaging, telecommunication, and night-vision displays.
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Affiliation(s)
- Yan-Ding Lin
- Department of Applied Chemistry, Providence University, Taichung, 43301, Taiwan
| | - Chin-Wei Lu
- Department of Applied Chemistry, Providence University, Taichung, 43301, Taiwan
| | - Hai-Ching Su
- Institute of Lighting and Energy Photonics, National Yang Ming Chiao Tung University, Tainan, 71150, Taiwan
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Shen Y, Dong Z, Sun Y, Guo H, Wu F, Li X, Tang J, Liu J, Wu X, Tian H, Ren TL. The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms. Adv Mater 2022; 34:e2201916. [PMID: 35535757 DOI: 10.1002/adma.202201916] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2022] [Revised: 04/12/2022] [Indexed: 06/14/2023]
Abstract
2D transition metal chalcogenide (TMDC) materials, such as MoS2 , have recently attracted considerable research interest in the context of their use in ultrascaled devices owing to their excellent electronic properties. Microprocessors and neural network circuits based on MoS2 have been developed at a large scale but still do not have an advantage over silicon in terms of their integrated density. In this study, the current structures, contact engineering, and doping methods for 2D TMDC materials for the scaling-down process and performance optimization are reviewed. Devices are introduced according to a new mechanism to provide the comprehensive prospects for the use of MoS2 beyond the traditional complementary-metal-oxide semiconductor in order to summarize obstacles to the goal of developing high-density and low-power integrated circuits (ICs). Finally, prospects for the use of MoS2 in large-scale ICs from the perspectives of the material, system performance, and application to nonlogic functionalities such as sensor circuits and analogous circuits, are briefly analyzed. The latter issue is along the direction of "more than Moore" research.
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Affiliation(s)
- Yang Shen
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Zuoyuan Dong
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Yabin Sun
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Hao Guo
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Fan Wu
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Xianglong Li
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Jun Tang
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Jun Liu
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Xing Wu
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - He Tian
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Tian-Ling Ren
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
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Li N, Jia Y, Guo Y, Zhao N. Ion Migration in Perovskite Light-Emitting Diodes: Mechanism, Characterizations, and Material and Device Engineering. Adv Mater 2022; 34:e2108102. [PMID: 34847262 DOI: 10.1002/adma.202108102] [Citation(s) in RCA: 38] [Impact Index Per Article: 19.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2021] [Revised: 11/26/2021] [Indexed: 06/13/2023]
Abstract
In recent years, perovskite light-emitting diodes (PeLEDs) have emerged as a promising new lighting technology with high external quantum efficiency, color purity, and wavelength tunability, as well as, low-temperature processability. However, the operational stability of PeLEDs is still insufficient for their commercialization. The generation and migration of ionic species in metal halide perovskites has been widely acknowledged as the primary factor causing the performance degradation of PeLEDs. Herein, this topic is systematically discussed by considering the fundamental and engineering aspects of ion-related issues in PeLEDs, including the material and processing origins of ion generation, the mechanisms driving ion migration, characterization approaches for probing ion distributions, the effects of ion migration on device performance and stability, and strategies for ion management in PeLEDs. Finally, perspectives on remaining challenges and future opportunities are highlighted.
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Affiliation(s)
- Nan Li
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Yongheng Jia
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Yuwei Guo
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Ni Zhao
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
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Chen Z, Li Z, Hopper TR, Bakulin AA, Yip HL. Materials, photophysics and device engineering of perovskite light-emitting diodes. Rep Prog Phys 2021; 84:046401. [PMID: 33730709 DOI: 10.1088/1361-6633/abefba] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2020] [Accepted: 03/17/2021] [Indexed: 06/12/2023]
Abstract
Here we provide a comprehensive review of a newly developed lighting technology based on metal halide perovskites (i.e. perovskite light-emitting diodes) encompassing the research endeavours into materials, photophysics and device engineering. At the outset we survey the basic perovskite structures and their various dimensions (namely three-, two- and zero-dimensional perovskites), and demonstrate how the compositional engineering of these structures affects the perovskite light-emitting properties. Next, we turn to the physics underpinning photo- and electroluminescence in these materials through their connection to the fundamental excited states, energy/charge transport processes and radiative and non-radiative decay mechanisms. In the remainder of the review, we focus on the engineering of perovskite light-emitting diodes, including the history of their development as well as an extensive analysis of contemporary strategies for boosting device performance. Key concepts include balancing the electron/hole injection, suppression of parasitic carrier losses, improvement of the photoluminescence quantum yield and enhancement of the light extraction. Overall, this review reflects the current paradigm for perovskite lighting, and is intended to serve as a foundation to materials and device scientists newly working in this field.
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Affiliation(s)
- Ziming Chen
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, School of Materials Science and Engineering, South China University of Technology, 381 Wushan Road, Guangzhou 510640, People's Republic of China
- School of Environment and Energy, South China University of Technology, Guangzhou University City, Panyu District, Guangzhou 510006, People's Republic of China
| | - Zhenchao Li
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, School of Materials Science and Engineering, South China University of Technology, 381 Wushan Road, Guangzhou 510640, People's Republic of China
| | - Thomas R Hopper
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, United Kingdom
| | - Artem A Bakulin
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, United Kingdom
| | - Hin-Lap Yip
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, School of Materials Science and Engineering, South China University of Technology, 381 Wushan Road, Guangzhou 510640, People's Republic of China
- Innovation Center of Printed Photovoltaics, South China Institute of Collaborative Innovation, Dongguan 523808, People's Republic of China
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong Special Administrative Region of China
- School of Energy and Environment, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong Special Administrative Region of China
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Duan L, Uddin A. Progress in Stability of Organic Solar Cells. Adv Sci (Weinh) 2020; 7:1903259. [PMID: 32537401 PMCID: PMC7284215 DOI: 10.1002/advs.201903259] [Citation(s) in RCA: 95] [Impact Index Per Article: 23.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2019] [Revised: 01/07/2020] [Accepted: 03/25/2020] [Indexed: 05/06/2023]
Abstract
The organic solar cell (OSC) is a promising emerging low-cost thin film photovoltaics technology. The power conversion efficiency (PCE) of OSCs has overpassed 16% for single junction and 17% for organic-organic tandem solar cells with the development of low bandgap organic materials synthesis and device processing technology. The main barrier of commercial use of OSCs is the poor stability of devices. Herein, the factors limiting the stability of OSCs are summarized. The limiting stability factors are oxygen, water, irradiation, heating, metastable morphology, diffusion of electrodes and buffer layers materials, and mechanical stress. The recent progress in strategies to increase the stability of OSCs is surveyed, such as material design, device engineering of active layers, employing inverted geometry, optimizing buffer layers, using stable electrodes and encapsulation materials. The International Summit on Organic Photovoltaic Stability guidelines are also discussed. The potential research strategies to achieve the required device stability and efficiency are highlighted, rendering possible pathways to facilitate the viable commercialization of OSCs.
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Affiliation(s)
- Leiping Duan
- School of Photovoltaic and Renewable Energy EngineeringUniversity of New South WalesSydneyNSW2052Australia
| | - Ashraf Uddin
- School of Photovoltaic and Renewable Energy EngineeringUniversity of New South WalesSydneyNSW2052Australia
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Lewis AE, Zhang Y, Gao P, Nazeeruddin MK. Unveiling the Concentration-Dependent Grain Growth of Perovskite Films from One- and Two-Step Deposition Methods: Implications for Photovoltaic Application. ACS Appl Mater Interfaces 2017; 9:25063-25066. [PMID: 28721721 DOI: 10.1021/acsami.7b05892] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
In order to achieve high-efficiency perovskite solar cells, understanding both the crystal structure and the optoelectronic properties of perovskite layers is of importance. This paper uses crystallization analysis and the modeling study of two different perovskite deposition methods (two- and one-step methods) and thereby shows that the one-step method embodies a film formation process that is dominated by crystal growth, while the dominant mechanism of the two-step procedure is nucleation. Our data based on experimental and theory shows that the one-step recipe is superior in terms of morphology control, and, hence, reproducibility, compared to the two-step recipe.
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Affiliation(s)
- Alison E Lewis
- Crystallization and Precipitation Research Unit, Department of Chemical Engineering University of Cape Town , Private Bag, Rondebosch, 7700, Cape Town, South Africa
| | - Yi Zhang
- Group for Molecular Engineering of Functional Materials, Institute of Chemical Sciences and Engineering, Ecole Polytechnique Federale de Lausanne CH-1951 Sion, Switzerland
| | - Peng Gao
- Group for Molecular Engineering of Functional Materials, Institute of Chemical Sciences and Engineering, Ecole Polytechnique Federale de Lausanne CH-1951 Sion, Switzerland
| | - Mohammad Khaja Nazeeruddin
- Group for Molecular Engineering of Functional Materials, Institute of Chemical Sciences and Engineering, Ecole Polytechnique Federale de Lausanne CH-1951 Sion, Switzerland
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