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Sk MR, Thunder S, Lehninger D, Sanctis S, Raffel Y, Lederer M, Jank MPM, Kämpfe T, De S, Chakrabarti B. Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation. ACS Appl Electron Mater 2023; 5:812-820. [PMID: 36873263 PMCID: PMC9979788 DOI: 10.1021/acsaelm.2c01357] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/07/2022] [Accepted: 11/25/2022] [Indexed: 06/18/2023]
Abstract
Indium gallium zinc oxide (IGZO)-based ferroelectric thin-film transistors (FeTFTs) are being vigorously investigated for being deployed in computing-in-memory (CIM) applications. Content-addressable memories (CAMs) are the quintessential example of CIM, which conduct a parallel search over a queue or stack to obtain the matched entries for a given input data. CAM cells offer the ability for massively parallel searches in a single clock cycle throughout an entire CAM array for the input query, thereby enabling pattern matching and searching functionality. Therefore, CAM cells are used extensively for pattern matching or search operations in data-centric computing. This paper investigates the impact of retention degradation on IGZO-based FeTFT on the multibit operation in content CAM cell applications. We propose a scalable multibit 1FeTFT-1T-based CAM cell composed of only one FeTFT and one transistor, thus significantly improving the density and energy efficiency compared with conventional complementary metal-oxide-semiconductor (CMOS)-based CAM. We successfully demonstrate the operations of our proposed CAM with storage and search by exploiting the multilevel states of the experimentally calibrated IGZO-based FeTFT devices. We also investigate the impact of retention degradation on the search operation. Our proposed IGZO-based 3-bit and 2-bit CAM cell shows 104 s and 106 s retention, respectively. The single-bit CAM cell shows lifelong (10 years) retention.
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Affiliation(s)
- Masud Rana Sk
- Indian
Institute of Technology Madras, Chennai600036, India
| | - Sunanda Thunder
- Fraunhofer-Institut
für Photonische Mikrosysteme IPMS - Center Nanoelectronic Technologies, Dresden01099, Germany
| | - David Lehninger
- Fraunhofer-Institut
für Photonische Mikrosysteme IPMS - Center Nanoelectronic Technologies, Dresden01099, Germany
| | - Shawn Sanctis
- Electron
Devices, Friedrich-Alexander-University
of Erlangen-Nuremberg, Cauerstr. 6, 91058 Erlangen, Germany
| | - Yannick Raffel
- Fraunhofer-Institut
für Photonische Mikrosysteme IPMS - Center Nanoelectronic Technologies, Dresden01099, Germany
| | - Maximilian Lederer
- Fraunhofer-Institut
für Photonische Mikrosysteme IPMS - Center Nanoelectronic Technologies, Dresden01099, Germany
| | - Michael P. M. Jank
- Fraunhofer-Institut
für Integrierte Systeme und Bauelementetechnologie, Erlangen91058, Germany
| | - Thomas Kämpfe
- Fraunhofer-Institut
für Photonische Mikrosysteme IPMS - Center Nanoelectronic Technologies, Dresden01099, Germany
| | - Sourav De
- Fraunhofer-Institut
für Photonische Mikrosysteme IPMS - Center Nanoelectronic Technologies, Dresden01099, Germany
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Hoffmann RC, Sanctis S, Liedke MO, Butterling M, Wagner A, Njel C, Schneider JJ. Zinc Oxide Defect Microstructure and Surface Chemistry Derived from Oxidation of Metallic Zinc: Thin-Film Transistor and Sensor Behavior of ZnO Films and Rods. Chemistry 2021; 27:5422-5431. [PMID: 33241921 PMCID: PMC8048417 DOI: 10.1002/chem.202004270] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/21/2020] [Indexed: 11/15/2022]
Abstract
Zinc oxide thin films are fabricated by controlled oxidation of sputtered zinc metal films on a hotplate in air at temperatures between 250 and 450 °C. The nanocrystalline films possess high relative densities and show preferential growth in (100) orientation. Integration in thin-film transistors reveals moderate charge carrier mobilities as high as 0.2 cm2 V-1 s-1 . The semiconducting properties depend on the calcination temperature, whereby the best performance is achieved at 450 °C. The defect structure of the thin ZnO film can be tracked by Doppler-broadening positron annihilation spectroscopy as well as positron lifetime studies. Comparably long positron lifetimes suggest interaction of zinc vacancies (VZn ) with one or more oxygen vacancies (VO ) in larger structural entities. Such VO -VZn defect clusters act as shallow acceptors, and thus, reduce the overall electron conductivity of the film. The concentration of these defect clusters decreases at higher calcination temperatures as indicated by changes in the S and W parameters. Such zinc oxide films obtained by conversion of metallic zinc can also be used as seed layers for solution deposition of zinc oxide nanowires employing a mild microwave-assisted process. The functionality of the obtained nanowire arrays is tested in a UV sensor device. The best results with respect to sensor sensitivity are achieved with thinner seed layers for device construction.
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Affiliation(s)
- Rudolf C. Hoffmann
- Eduard-Zintl-Institute for Inorganic and Physical ChemistryTechnical University DarmstadtAlarich-Weiss-Straße 1264287DarmstadtGermany
| | - Shawn Sanctis
- Eduard-Zintl-Institute for Inorganic and Physical ChemistryTechnical University DarmstadtAlarich-Weiss-Straße 1264287DarmstadtGermany
| | - Maciej O. Liedke
- Institute of Radiation PhysicsHelmholtz-Zentrum Dresden-RossendorfBautzner Landstraße 40001328DresdenGermany
| | - Maik Butterling
- Institute of Radiation PhysicsHelmholtz-Zentrum Dresden-RossendorfBautzner Landstraße 40001328DresdenGermany
| | - Andreas Wagner
- Institute of Radiation PhysicsHelmholtz-Zentrum Dresden-RossendorfBautzner Landstraße 40001328DresdenGermany
| | - Christian Njel
- Institute for Applied Materials—Energy StorageKarlsruhe Institute of Technology (KIT)Hermann-von-Helmholtz-Platz 176344Eggenstein- LeopoldshafenGermany
| | - Jörg J. Schneider
- Eduard-Zintl-Institute for Inorganic and Physical ChemistryTechnical University DarmstadtAlarich-Weiss-Straße 1264287DarmstadtGermany
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Hoffmann RC, Sanctis S, Liedke MO, Butterling M, Wagner A, Njel C, Schneider JJ. Front Cover: Zinc Oxide Defect Microstructure and Surface Chemistry Derived from Oxidation of Metallic Zinc: Thin‐Film Transistor and Sensor Behavior of ZnO Films and Rods (Chem. Eur. J. 17/2021). Chemistry 2021. [DOI: 10.1002/chem.202005364] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- Rudolf C. Hoffmann
- Eduard-Zintl-Institute for Inorganic and Physical Chemistry Technical University Darmstadt Alarich-Weiss-Straße 12 64287 Darmstadt Germany
| | - Shawn Sanctis
- Eduard-Zintl-Institute for Inorganic and Physical Chemistry Technical University Darmstadt Alarich-Weiss-Straße 12 64287 Darmstadt Germany
| | - Maciej O. Liedke
- Institute of Radiation Physics Helmholtz-Zentrum Dresden-Rossendorf Bautzner Landstraße 400 01328 Dresden Germany
| | - Maik Butterling
- Institute of Radiation Physics Helmholtz-Zentrum Dresden-Rossendorf Bautzner Landstraße 400 01328 Dresden Germany
| | - Andreas Wagner
- Institute of Radiation Physics Helmholtz-Zentrum Dresden-Rossendorf Bautzner Landstraße 400 01328 Dresden Germany
| | - Christian Njel
- Institute for Applied Materials—Energy Storage Karlsruhe Institute of Technology (KIT) Hermann-von-Helmholtz-Platz 1 76344 Eggenstein- Leopoldshafen Germany
| | - Jörg J. Schneider
- Eduard-Zintl-Institute for Inorganic and Physical Chemistry Technical University Darmstadt Alarich-Weiss-Straße 12 64287 Darmstadt Germany
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Hoffmann RC, Sanctis S, Liedke MO, Butterling M, Wagner A, Njel C, Schneider JJ. Zinc Oxide Defect Microstructure and Surface Chemistry Derived from Oxidation of Metallic Zinc. Thin Film Transistor and Sensoric Behaviour of ZnO Films and Rods. Chemistry 2021; 27:5312. [PMID: 33538371 DOI: 10.1002/chem.202005365] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Abstract
Invited for the cover of this issue is Jörg J. Schneider and co-workers at Technical University Darmstadt, Helmholtz-Zentrum Dresden-Rossendorf and KIT Karlsruhe. The image depicts the application of high energy generated electron/positron couples which are able to detect defects sites in semiconducting zinc oxide thin films. Read the full text of the article at 10.1002/chem.202004270.
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Affiliation(s)
- Rudolf C Hoffmann
- Eduard-Zintl-Institute for Inorganic and Physical Chemistry, Technical University Darmstadt, Alarich-Weiss-Straße 12, 64287, Darmstadt, Germany
| | - Shawn Sanctis
- Eduard-Zintl-Institute for Inorganic and Physical Chemistry, Technical University Darmstadt, Alarich-Weiss-Straße 12, 64287, Darmstadt, Germany
| | - Maciej O Liedke
- Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328, Dresden, Germany
| | - Maik Butterling
- Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328, Dresden, Germany
| | - Andreas Wagner
- Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328, Dresden, Germany
| | - Christian Njel
- Institute for Applied Materials-Energy Storage, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein- Leopoldshafen, Germany
| | - Jörg J Schneider
- Eduard-Zintl-Institute for Inorganic and Physical Chemistry, Technical University Darmstadt, Alarich-Weiss-Straße 12, 64287, Darmstadt, Germany
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Atanasova P, Hoffmann RC, Stitz N, Sanctis S, Burghard Z, Bill J, Schneider JJ, Eiben S. Engineered nanostructured virus/ZnO hybrid materials with dedicated functional properties. Bioinspired, Biomimetic and Nanobiomaterials 2019. [DOI: 10.1680/jbibn.18.00006] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
Affiliation(s)
- Petia Atanasova
- Institute for Materials Science, University of Stuttgart, Stuttgart, Germany
| | - Rudolf C Hoffmann
- Eduard-Zintl-Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt, Darmstadt, Germany
| | - Nina Stitz
- Institute for Materials Science, University of Stuttgart, Stuttgart, Germany
| | - Shawn Sanctis
- Eduard-Zintl-Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt, Darmstadt, Germany
| | - Zaklina Burghard
- Institute for Materials Science, University of Stuttgart, Stuttgart, Germany
| | - Joachim Bill
- Institute for Materials Science, University of Stuttgart, Stuttgart, Germany
| | - Jörg J Schneider
- Eduard-Zintl-Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt, Darmstadt, Germany
| | - Sabine Eiben
- Institute of Biomaterials and Biological Systems, University of Stuttgart, Stuttgart, Germany
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Sanctis S, Hoffmann RC, Koslowski N, Foro S, Bruns M, Schneider JJ. Aqueous Solution Processing of Combustible Precursor Compounds into Amorphous Indium Gallium Zinc Oxide (IGZO) Semiconductors for Thin Film Transistor Applications. Chem Asian J 2018; 13:3912-3919. [PMID: 30426698 DOI: 10.1002/asia.201801371] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/12/2018] [Revised: 10/07/2018] [Indexed: 11/08/2022]
Abstract
Combustion synthesis of semiconducting amorphous indium gallium zinc oxide IGZO (In:Ga:Zn, 7:1:1.5) thin films was carried out using urea nitrate precursor compounds of indium(III), gallium(III) and zinc(II). This approach provides further understanding towards the oxide formation process under a moderate temperature regime by employment of well-defined coordination compounds. All precursor compounds were fully characterized by spectroscopic techniques as well as by single crystal structure analysis. Their intrinsic thermal decomposition was studied by a combination of differential scanning calorimetry (DSC) and thermogravimetry coupled with mass spectrometry and infrared spectroscopy (TG-MS/IR). For all precursors a multistep decomposition involving a complex redox-reaction pathway under in situ formation of nitrogen containing molecular species was observed. Controlled thermal conversion of a mixture of the indium, gallium and zinc urea nitrate complexes into ternary amorphous IGZO films could thus be achieved. Thin film transistors (TFTs) were fabricated from a defined compositional mixture of the molecular precursors. The TFT devices exhibited decent charge carrier mobilities of 0.4 and 3.1 cm2 /(Vs) after annealing of the deposited films at temperatures as low as 250 and 350 °C, respectively. This approach represents a significant step further towards a low temperature solution processing of semiconducting thin films.
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Affiliation(s)
- Shawn Sanctis
- Department of Chemistry, Eduard-Zintl Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt, Alarich-Weiss-Straße 12, 64287, Darmstadt, Germany
| | - Rudolf C Hoffmann
- Department of Chemistry, Eduard-Zintl Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt, Alarich-Weiss-Straße 12, 64287, Darmstadt, Germany
| | - Nico Koslowski
- Department of Chemistry, Eduard-Zintl Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt, Alarich-Weiss-Straße 12, 64287, Darmstadt, Germany
| | - Sabine Foro
- Department of Material Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 8, 64287, Darmstadt, Germany
| | - Michael Bruns
- Institute for Applied Materials-Karlsruhe Nano Micro Facility, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, D-76344, Eggenstein-Leopoldshafen, Germany
| | - Jörg J Schneider
- Department of Chemistry, Eduard-Zintl Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt, Alarich-Weiss-Straße 12, 64287, Darmstadt, Germany
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Krausmann J, Sanctis S, Engstler J, Luysberg M, Bruns M, Schneider JJ. Charge Transport in Low-Temperature Processed Thin-Film Transistors Based on Indium Oxide/Zinc Oxide Heterostructures. ACS Appl Mater Interfaces 2018; 10:20661-20671. [PMID: 29888585 DOI: 10.1021/acsami.8b03322] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The influence of the composition within multilayered heterostructure oxide semiconductors has a critical impact on the performance of thin-film transistor (TFT) devices. The heterostructures, comprising alternating polycrystalline indium oxide and zinc oxide layers, are fabricated by a facile atomic layer deposition (ALD) process, enabling the tuning of its electrical properties by precisely controlling the thickness of the individual layers. This subsequently results in enhanced TFT performance for the optimized stacked architecture after mild thermal annealing at temperatures as low as 200 °C. Superior transistor characteristics, resulting in an average field-effect mobility (μsat.) of 9.3 cm2 V-1 s-1 ( W/ L = 500), an on/off ratio ( Ion/ Ioff) of 5.3 × 109, and a subthreshold swing of 162 mV dec-1, combined with excellent long-term and bias stress stability are thus demonstrated. Moreover, the inherent semiconducting mechanism in such multilayered heterostructures can be conveniently tuned by controlling the thickness of the individual layers. Herein, devices comprising a higher In2O3/ZnO ratio, based on individual layer thicknesses, are predominantly governed by percolation conduction with temperature-independent charge carrier mobility. Careful adjustment of the individual oxide layer thicknesses in devices composed of stacked layers plays a vital role in the reduction of trap states, both interfacial and bulk, which consequently deteriorates the overall device performance. The findings enable an improved understanding of the correlation between TFT performance and the respective thin-film composition in ALD-based heterostructure oxides.
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Affiliation(s)
- Jan Krausmann
- Fachbereich Chemie, Eduard-Zintl-Institut, Fachgebiet Anorganische Chemie , Technische Universität Darmstadt , Alarich-Weiss-Straße 12 , 64287 Darmstadt , Germany
| | - Shawn Sanctis
- Fachbereich Chemie, Eduard-Zintl-Institut, Fachgebiet Anorganische Chemie , Technische Universität Darmstadt , Alarich-Weiss-Straße 12 , 64287 Darmstadt , Germany
| | - Jörg Engstler
- Fachbereich Chemie, Eduard-Zintl-Institut, Fachgebiet Anorganische Chemie , Technische Universität Darmstadt , Alarich-Weiss-Straße 12 , 64287 Darmstadt , Germany
| | - Martina Luysberg
- Forschungszentrum Jülich GmbH, Ernst Ruska-Centre (ERC) and Peter Grünberg Institute (PGI) , Wilhelm-Johnen-Straße , 52428 Jülich , Germany
| | - Michael Bruns
- Institute for Applied Materials (IAM-ESS) , Karlsruhe Institute of Technology , Hermann-von-Helmholtz-Platz 1, B 321 , D-76344 Eggenstein-Leopoldshafen , Germany
| | - Jörg J Schneider
- Fachbereich Chemie, Eduard-Zintl-Institut, Fachgebiet Anorganische Chemie , Technische Universität Darmstadt , Alarich-Weiss-Straße 12 , 64287 Darmstadt , Germany
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Sanctis S, Koslowski N, Hoffmann R, Guhl C, Erdem E, Weber S, Schneider JJ. Toward an Understanding of Thin-Film Transistor Performance in Solution-Processed Amorphous Zinc Tin Oxide (ZTO) Thin Films. ACS Appl Mater Interfaces 2017; 9:21328-21337. [PMID: 28573850 DOI: 10.1021/acsami.7b06203] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Amorphous zinc tin oxide (ZTO) thin films are accessible by a molecular precursor approach using mononuclear zinc(II) and tin(II) compounds with methoxyiminopropionic acid ligands. Solution processing of two precursor solutions containing a mixture of zinc and tin(II)-methoxyiminopropinato complexes results in the formation of smooth homogeneous thin films, which upon calcination are converted into the desired semiconducting amorphous ZTO thin films. ZTO films integrated within a field-effect transistor (FET) device exhibit an active semiconducting behavior in the temperature range between 250 and 400 °C, giving an increased performance, with mobility values between μ = 0.03 and 5.5 cm2/V s, with on/off ratios increasing from 105 to 108 when going from 250 to 400 °C. Herein, our main emphasis, however, was on an improved understanding of the material transformation pathway from weak to high performance of the semiconductor in a solution-processed FET as a function of the processing temperature. We have correlated this with the chemical composition and defects states within the microstructure of the obtained ZTO thin film via photoelectron spectroscopy (X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy), Auger electron spectroscopy, electron paramagnetic resonance spectroscopy, atomic force microscopy, and photoluminescence investigations. The critical factor observed for the improved performance within this ZTO material could be attributed to a higher tin concentration, wherein the contributions of point defects arising from the tin oxide within the final amorphous ZTO material play the dominant role in governing the transistor performance.
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Affiliation(s)
- Shawn Sanctis
- Fachbereich Chemie, Eduard-Zintl-Institut, Fachgebiet Anorganische Chemie, Technische Universität Darmstadt , Alarich-Weiss-Straße 12, 64287 Darmstadt, Germany
| | - Nico Koslowski
- Fachbereich Chemie, Eduard-Zintl-Institut, Fachgebiet Anorganische Chemie, Technische Universität Darmstadt , Alarich-Weiss-Straße 12, 64287 Darmstadt, Germany
| | - Rudolf Hoffmann
- Fachbereich Chemie, Eduard-Zintl-Institut, Fachgebiet Anorganische Chemie, Technische Universität Darmstadt , Alarich-Weiss-Straße 12, 64287 Darmstadt, Germany
| | - Conrad Guhl
- Fachgebiet Surface Science, Technische Universität Darmstadt , Jovanka-Bontschits-Straße 2, 64287 Darmstadt, Germany
| | - Emre Erdem
- Institute of Physical Chemistry, Universität Freiburg , Albert Straße 21, 79104 Freiburg, Germany
| | - Stefan Weber
- Institute of Physical Chemistry, Universität Freiburg , Albert Straße 21, 79104 Freiburg, Germany
| | - Jörg J Schneider
- Fachbereich Chemie, Eduard-Zintl-Institut, Fachgebiet Anorganische Chemie, Technische Universität Darmstadt , Alarich-Weiss-Straße 12, 64287 Darmstadt, Germany
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Hoffmann RC, Sanctis S, Schneider JJ. Molecular Precursors for ZnO Nanoparticles: Field-Assisted Synthesis, Electrophoretic Deposition, and Field-Effect Transistor Device Performance. Inorg Chem 2017; 56:7550-7557. [DOI: 10.1021/acs.inorgchem.7b01088] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Rudolf C. Hoffmann
- Fachbereich Chemie, Eduard-Zintl-Institut,
Fachgebiet Anorganische Chemie, Technische Universität Darmstadt, Alarich-Weiss-Straße 12, 64287 Darmstadt, Germany
| | - Shawn Sanctis
- Fachbereich Chemie, Eduard-Zintl-Institut,
Fachgebiet Anorganische Chemie, Technische Universität Darmstadt, Alarich-Weiss-Straße 12, 64287 Darmstadt, Germany
| | - Jörg J. Schneider
- Fachbereich Chemie, Eduard-Zintl-Institut,
Fachgebiet Anorganische Chemie, Technische Universität Darmstadt, Alarich-Weiss-Straße 12, 64287 Darmstadt, Germany
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Atanasova P, Stitz N, Sanctis S, Maurer JHM, Hoffmann RC, Eiben S, Jeske H, Schneider JJ, Bill J. Genetically improved monolayer-forming tobacco mosaic viruses to generate nanostructured semiconducting bio/inorganic hybrids. Langmuir 2015; 31:3897-3903. [PMID: 25768914 DOI: 10.1021/acs.langmuir.5b00700] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
The genetically determined design of structured functional bio/inorganic materials was investigated by applying a convective assembly approach. Wildtype tobacco mosaic virus (wt TMV) as well as several TMV mutants were organized on substrates over macroscopic-length scales. Depending on the virus type, the self-organization behavior showed pronounced differences in the surface arrangement under the same convective assembly conditions. Additionally, under varying assembly parameters, the virus particles generated structures encompassing morphologies emerging from single micrometer long fibers aligned parallel to the triple-contact line through disordered but dense films to smooth and uniform monolayers. Monolayers with diverse packing densities were used as templates to form TMV/ZnO hybrid materials. The semiconducting properties can be directly designed and tuned by the variation of the template architecture which are reflected in the transistor performance.
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Affiliation(s)
- Petia Atanasova
- †Institute of Materials Science, Universität Stuttgart, Heisenbergstrasse 3, 70569 Stuttgart, Germany
| | - Nina Stitz
- †Institute of Materials Science, Universität Stuttgart, Heisenbergstrasse 3, 70569 Stuttgart, Germany
| | - Shawn Sanctis
- ‡Fachbereich Chemie, Eduard-Zintl-Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt, Alarich-Weiss-Strasse 12, 64287 Darmstadt, Germany
| | - Johannes H M Maurer
- †Institute of Materials Science, Universität Stuttgart, Heisenbergstrasse 3, 70569 Stuttgart, Germany
| | - Rudolf C Hoffmann
- ‡Fachbereich Chemie, Eduard-Zintl-Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt, Alarich-Weiss-Strasse 12, 64287 Darmstadt, Germany
| | - Sabine Eiben
- §Institute of Biomaterials and Biological Systems, Universität Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany
| | - Holger Jeske
- §Institute of Biomaterials and Biological Systems, Universität Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany
| | - Jörg J Schneider
- ‡Fachbereich Chemie, Eduard-Zintl-Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt, Alarich-Weiss-Strasse 12, 64287 Darmstadt, Germany
| | - Joachim Bill
- †Institute of Materials Science, Universität Stuttgart, Heisenbergstrasse 3, 70569 Stuttgart, Germany
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Sanctis S, Hoffmann RC, Eiben S, Schneider JJ. Microwave assisted synthesis and characterisation of a zinc oxide/tobacco mosaic virus hybrid material. An active hybrid semiconductor in a field-effect transistor device. Beilstein J Nanotechnol 2015; 6:785-791. [PMID: 25977849 PMCID: PMC4419583 DOI: 10.3762/bjnano.6.81] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/12/2014] [Accepted: 02/16/2015] [Indexed: 05/31/2023]
Abstract
Tobacco mosaic virus (TMV) has been employed as a robust functional template for the fabrication of a TMV/zinc oxide field effect transistor (FET). A microwave based approach, under mild conditions was employed to synthesize stable zinc oxide (ZnO) nanoparticles, employing a molecular precursor. Insightful studies of the decomposition of the precursor were done using NMR spectroscopy and material characterization of the hybrid material derived from the decomposition was achieved using dynamic light scattering (DLS), transmission electron microscopy (TEM), grazing incidence X-ray diffractometry (GI-XRD) and atomic force microscopy (AFM). TEM and DLS data confirm the formation of crystalline ZnO nanoparticles tethered on top of the virus template. GI-XRD investigations exhibit an orientated nature of the deposited ZnO film along the c-axis. FET devices fabricated using the zinc oxide mineralized virus template material demonstrates an operational transistor performance which was achieved without any high-temperature post-processing steps. Moreover, a further improvement in FET performance was observed by adjusting an optimal layer thickness of the deposited ZnO on top of the TMV. Such a bio-inorganic nanocomposite semiconductor material accessible using a mild and straightforward microwave processing technique could open up new future avenues within the field of bio-electronics.
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Affiliation(s)
- Shawn Sanctis
- Fachbereich Chemie, Eduard-Zintl-Institut, Fachgebiet Anorganische Chemie, Technische Universität Darmstadt, Alarich-Weiss Straße 12, 64287 Darmstadt, Germany
| | - Rudolf C Hoffmann
- Fachbereich Chemie, Eduard-Zintl-Institut, Fachgebiet Anorganische Chemie, Technische Universität Darmstadt, Alarich-Weiss Straße 12, 64287 Darmstadt, Germany
| | - Sabine Eiben
- Institute of Biomaterials and Biomolecular Systems, Dept. of Molecular Biology and Plant Virology, University of Stuttgart, 70550 Stuttgart, Germany
| | - Jörg J Schneider
- Fachbereich Chemie, Eduard-Zintl-Institut, Fachgebiet Anorganische Chemie, Technische Universität Darmstadt, Alarich-Weiss Straße 12, 64287 Darmstadt, Germany
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Sanctis S, Hoffmann RC, Schneider JJ. Microwave synthesis and field effect transistor performance of stable colloidal indium-zinc-oxide nanoparticles. RSC Adv 2013. [DOI: 10.1039/c3ra44222e] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
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