Tunable Rashba spin-orbit interaction at oxide interfaces

Carrier density and disorder tuned superconductor-metal transition in a two-dimensional electron system

Quantum ground states that arise at atomically controlled oxide interfaces provide an opportunity to address key questions in condensed matter physics, including the nature of two-dimensional metallic behaviour often observed adjacent to superconductivity. At the superconducting LaAlO3/SrTiO3 interface, a metallic ground state emerges upon the collapse of superconductivity with field-effect gating and is accompanied with a pseudogap. Here we utilize independent control of carrier density and disorder of the interfacial superconductor using dual electrostatic gates, which enables the comprehensive examination of the electronic phase diagram approaching zero temperature. We find that the pseudogap corresponds to precursor pairing, and the onset of long-range phase coherence forms a two-dimensional superconducting dome as a function of the dual-gate voltages. The gate-tuned superconductor-metal transitions are driven by macroscopic phase fluctuations of Josephson coupled superconducting puddles.

Interference Induced Enhancement of Magneto-Optical Effect in Pt/TbCo Hetero-Structured Films

Magnetic films with a heavy metal layer show strong interfacial interaction of spin-orbit. Spin-orbit interaction is one of the key technologies for spintronics. In this paper, we measured magneto-optical Kerr spectra of Pt/TbCo hetero-structure films on a thermally oxidized silicon substrate (0.3 mm); A: Pt (3 nm)/TbCo (6 nm)/Pt (3 nm), B: Si3N4 (10 nm)/TbCo (6 nm)/Pt (3 nm), and C: Pt (3 nm)/TbCo (6 nm)/Si3N4 (10 nm). Magneto-optical Kerr spectra of each sample were measured with a wavelength range of 300–700 nm, and were compared to the simulated spectra using the effective refractive index method. In the sample A, which has a symmetric structure, the simulated spectra are consistent with the measured ones. On the other hand, in the samples B and C, with an asymmetric structure, there are some differences between the simulated spectra and the measured ones in a lower photon energy region. This may be caused by interfacial effects of the spin-orbit interaction.

High-Mobility Spin-Polarized Two-Dimensional Electron Gases at EuO/KTaO_{3} Interfaces

Two-dimensional electron gases (2DEGs) at oxide interfaces, which provide unique playgrounds for emergent phenomena, have attracted increasing attention in recent years. While most of the previous works focused on the 2DEGs at LaAlO_{3}/SrTiO_{3} interfaces, here we report on a new kind of 2DEGs formed between a magnetic insulator EuO and a high-k perovskite KTaO_{3}. The 2DEGs are not only highly conducting, with a maximal Hall mobility of 111.6  cm^{2}/V s at 2 K, but also well spin polarized, showing strongly hysteretic magnetoresistance up to 25 K and well-defined anomalous Hall effect up to 70 K. Moreover, unambiguous correspondences between the hysteretic behaviors of 2DEGs and the EuO layer are captured, suggesting the proximity effect of the latter on the former. This is confirmed by the results of density-functional theory calculations: Through interlayer exchange, EuO drives the neighboring TaO_{2} layer into a ferromagnetic state. The present work opens new avenues for the exploration for high performance spin-polarized 2DEGs at oxide interfaces.

Asymmetric and Symmetric Exchange in a Generalized 2D Rashba Ferromagnet

Dzyaloshinskii-Moriya interaction (DMI) is investigated in a 2D ferromagnet (FM) with spin-orbit interaction of Rashba type at finite temperatures. The FM is described in the continuum limit by an effective s-d model with arbitrary dependence of spin-orbit coupling (SOC) and kinetic energy of itinerant electrons on the absolute value of momentum. In the limit of weak SOC, we derive a general expression for the DMI constant D from a microscopic analysis of the electronic grand potential. We compare D with the exchange stiffness A and show that, to the leading order in small SOC strength α_{R}, the conventional relation D=(4mα_{R}/ℏ)A, in general, does not hold beyond the Bychkov-Rashba model. Moreover, in this model, both A and D vanish at zero temperature in the metal regime (i.e., when two spin sub-bands are partly occupied). For nonparabolic bands or nonlinear Rashba coupling, these coefficients are finite and acquire a nontrivial dependence on the chemical potential that demonstrates the possibility to control the size and chirality of magnetic textures by adjusting a gate voltage.

A possible superconductor-like state at elevated temperatures near metal electrodes in an LaAlO3/SrTiO3 interface

We experimentally investigated the transport properties near metal electrodes installed on a conducting channel in a LaAlO3/SrTiO3 interface. The local region around the Ti and Al electrodes has a higher electrical conductance than that of other regions, where the upper limits of the temperature and magnetic field can be well defined. Beyond these limits, the conductance abruptly decreases, as in the case of a superconductor. The samples with the Ti- or Al-electrode have an upper-limit temperature of approximately 4 K, which is 10 times higher than the conventional superconducting critical temperature of LaAlO3/SrTiO3 interfaces and delta-doped SrTiO3. This phenomenon is explained by the mechanism of electron transfer between the metal electrodes and electronic d-orbitals in the LaAlO3/SrTiO3 interface. The transferred electrons trigger a phase transition to a superconductor-like state. Our results contribute to the deep understanding of the superconductivity in the LaAlO3/SrTiO3 interface and will be helpful for the development of high-temperature interface superconductors.

Extreme Reconfigurable Nanoelectronics at the CaZrO3 /SrTiO3 Interface

Complex oxide heterostructures have fascinating emergent properties that originate from the properties of the bulk constituents as well as from dimensional confinement. The conductive behavior of the polar/nonpolar LaAlO3 /SrTiO3 interface can be reversibly switched using conductive atomic force microscopy (c-AFM) lithography, enabling a wide range of devices and physics to be explored. Here, extreme nanoscale control over the CaZrO3 /SrTiO3 (CZO/STO) interface, which is formed from two materials that are both nonpolar, is reported. Nanowires with measured widths as narrow as 1.2 nm are realized at the CZO/STO interface at room temperature by c-AFM lithography. These ultrathin nanostructures have spatial dimensions at room temperature that are comparable to single-walled carbon nanotubes, and hold great promise for alternative oxide-based nanoelectronics, as well as offer new opportunities to investigate the electronic structure of the complex oxide interfaces. The cryogenic properties of devices constructed from quasi-1D channels, tunnel barriers, and planar gates exhibit gate-tunable superconductivity, quantum oscillations, electron pairing outside of the superconducting regime, and quasi-ballistic transport. This newly demonstrated ability to control the metal-insulator transition at nonpolar oxide interface greatly expands the class of materials whose behavior can be patterned and reconfigured at extreme nanoscale dimensions.

Observation of Out-of-Plane Spin Texture in a SrTiO_{3}(111) Two-Dimensional Electron Gas

We explore the second order bilinear magnetoelectric resistance (BMER) effect in the d-electron-based two-dimensional electron gas (2DEG) at the SrTiO_{3}(111) surface. We find evidence of a spin-split band structure with the archetypal spin-momentum locking of the Rashba effect for the in-plane component. Under an out-of-plane magnetic field, we find a BMER signal that breaks the sixfold symmetry of the electronic dispersion, which is a fingerprint for the presence of a momentum-dependent out-of-plane spin component. Relativistic electronic structure calculations reproduce this spin texture and indicate that the out-of-plane component is a ubiquitous property of oxide 2DEGs arising from strong crystal field effects. We further show that the BMER response of the SrTiO_{3}(111) 2DEG is tunable and unexpectedly large.

Graphene-Complex-Oxide Nanoscale Device Concepts

The integration of graphene with complex-oxide heterostructures such as LaAlO₃/SrTiO₃ offers the opportunity to combine the multifunctional properties of an oxide interface with the exceptional electronic properties of graphene. The ability to control interface conduction through graphene and understanding how it affects the intrinsic properties of an oxide interface are critical to the technological development of multifunctional devices. Here we demonstrate several device archetypes in which electron transport at an oxide interface is modulated using a patterned graphene top-gate. Nanoscale devices are fabricated at the oxide interface by conductive atomic force microscope (c-AFM) lithography, and transport measurements are performed as a function of the graphene gate voltage. Experiments are performed with devices written adjacent to or directly underneath the graphene gate. Distinct capabilities of this approach include the ability to create highly flexible device configurations, the ability to modulate carrier density at the oxide interface, and the ability to control electron transport up to the single-electron tunneling regime, while maintaining intrinsic transport properties of the oxide interface. Our results facilitate the design of a variety of nanoscale devices that combine excellent transport properties of these two proximal two-dimensional electron systems.

Transport regimes of a split gate superconducting quantum point contact in the two-dimensional LaAlO3/SrTiO3 superfluid

One of the hallmark experiments of quantum transport is the observation of the quantized resistance in a point contact in GaAs/AlGaAs heterostructures. Being formed with split gate technology, these structures represent in an ideal manner equilibrium reservoirs which are connected only through a few electron mode channel. It has been a long standing goal to achieve similar experimental conditions also in superconductors. Here we demonstrate the formation of a superconducting quantum point contact (SQPC) with split gate technology in a two-dimensional superconductor, utilizing the unique gate tunability of the superfluid at the LaAlO3/SrTiO3 interface. When the constriction is tuned through the action of metallic split gates we identify three regimes of transport: First, SQPC for which the supercurrent is carried only by a few quantum transport channels. Second, superconducting island strongly coupled to the equilibrium reservoirs. Third, charge island with a discrete spectrum weakly coupled to the reservoirs.

Theory of the Interfacial Dzyaloshinskii-Moriya Interaction in Rashba Antiferromagnets

In antiferromagnetic (AFM) thin films, broken inversion symmetry or coupling to adjacent heavy metals can induce Dzyaloshinskii-Moriya (DM) interactions. Knowledge of the DM parameters is essential for understanding and designing exotic spin structures, such as hedgehog Skyrmions and chiral Néel walls, which are attractive for use in novel information storage technologies. We introduce a framework for computing the DM interaction in two-dimensional Rashba antiferromagnets. Unlike in Rashba ferromagnets, the DM interaction is not suppressed even at low temperatures. The material parameters control both the strength and the sign of the interfacial DM interaction. Our results suggest a route toward controlling the DM interaction in AFM materials by means of doping and electric fields.

Nonzero Berry phase in quantum oscillations from giant Rashba-type spin splitting in LaTiO3/SrTiO3 heterostructures

The manipulation of the spin degrees of freedom in a solid has been of fundamental and technological interest recently for developing high-speed, low-power computational devices. There has been much work focused on developing highly spin-polarized materials and understanding their behavior when incorporated into so-called spintronic devices. These devices usually require spin splitting with magnetic fields. However, there is another promising strategy to achieve spin splitting using spatial symmetry breaking without the use of a magnetic field, known as Rashba-type splitting. Here we report evidence for a giant Rashba-type splitting at the interface of LaTiO₃ and SrTiO₃. Analysis of the magnetotransport reveals anisotropic magnetoresistance, weak anti-localization and quantum oscillation behavior consistent with a large Rashba-type splitting. It is surprising to find a large Rashba-type splitting in 3d transition metal oxide-based systems such as the LaTiO₃/SrTiO₃ interface, but it is promising for the development of a new kind of oxide-based spintronics.

Rashba-type splitting is an effective way to manipulate the spin degrees of freedom in a solid without external magnetic field. Here, the authors demonstrate a strong Rashba-type splitting at the interface of LaTiO₃ and SrTiO₃ which is promising for the development of oxide-based spintronics.

Effect of Nb concentration on the spin-orbit coupling strength in Nb-doped SrTiO3 epitaxial thin films

Several oxide materials have attracted much interest for the application in spintronic devices due to unusual properties originating from the strongly correlated orbital and spin degrees of freedom. One missing part in oxide spintronics is a good spin channel featured by strong spin-orbit coupling (SOC) which enables an efficient control of the electron’s spin. We have systematically investigated the dependence of the SOC strength of Sr(Nb_xTi_1−x)O₃ thin films on Nb concentration (n_Nb = 2~20 at. %) as a deeper exploration of a recent finding of the strong SOC in a heavily Nb-doped SrTiO₃ (Sr(Nb_0.2Ti_0.8)O₃) epitaxial film. Apart from a finding of a proportionality of the SOC to n_Nb, we have observed an intriguing temperature dependence of the SOC strength and the anisotropic magnetoresistance (MR) in the intermediate n_Nb region. These phenomena are associated with the temperature dependence of Landé g-factor and the change of the band structure, which is consistent with the result of density functional theory (DFT) calculation.

Direct imaging of the electron liquid at oxide interfaces

The breaking of symmetry across an oxide heterostructure causes the electronic orbitals to be reconstructed at the interface into energy states that are different from their bulk counterparts ¹ . The detailed nature of the orbital reconstruction critically affects the spatial confinement and the physical properties of the electrons occupying the interfacial orbitals^2-4. Using an example of two-dimensional electron liquids forming at LaAlO₃/SrTiO₃ interfaces^5,6 with different crystal symmetry, we show that the selective orbital occupation and spatial quantum confinement of electrons can be resolved with subnanometre resolution using inline electron holography. For the standard (001) interface, the charge density map obtained by inline electron holography shows that the two-dimensional electron liquid is confined to the interface with narrow spatial extension (~1.0 ± 0.3 nm in the half width). On the other hand, the two-dimensional electron liquid formed at the (111) interface shows a much broader spatial extension (~3.3 ± 0.3 nm) with the maximum density located ~2.4 nm away from the interface, in excellent agreement with density functional theory calculations.

Direct observation of a two-dimensional hole gas at oxide interfaces

The discovery of a two-dimensional electron gas (2DEG) at the LaAlO₃/SrTiO₃ interface ¹ has resulted in the observation of many properties^2-5 not present in conventional semiconductor heterostructures, and so become a focal point for device applications^6-8. Its counterpart, the two-dimensional hole gas (2DHG), is expected to complement the 2DEG. However, although the 2DEG has been widely observed ⁹ , the 2DHG has proved elusive. Herein we demonstrate a highly mobile 2DHG in epitaxially grown SrTiO₃/LaAlO₃/SrTiO₃ heterostructures. Using electrical transport measurements and in-line electron holography, we provide direct evidence of a 2DHG that coexists with a 2DEG at complementary heterointerfaces in the same structure. First-principles calculations, coherent Bragg rod analysis and depth-resolved cathodoluminescence spectroscopy consistently support our finding that to eliminate ionic point defects is key to realizing a 2DHG. The coexistence of a 2DEG and a 2DHG in a single oxide heterostructure provides a platform for the exciting physics of confined electron-hole systems and for developing applications.

Physics of SrTiO3-based heterostructures and nanostructures: a review

This review provides a summary of the rich physics expressed within SrTiO3-based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO3 itself, we will then discuss the basics of SrTiO3-based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.

Maximal Rashba-like spin splitting via kinetic-energy-coupled inversion-symmetry breaking

Engineering and enhancing the breaking of inversion symmetry in solids-that is, allowing electrons to differentiate between 'up' and 'down'-is a key goal in condensed-matter physics and materials science because it can be used to stabilize states that are of fundamental interest and also have potential practical applications. Examples include improved ferroelectrics for memory devices and materials that host Majorana zero modes for quantum computing. Although inversion symmetry is naturally broken in several crystalline environments, such as at surfaces and interfaces, maximizing the influence of this effect on the electronic states of interest remains a challenge. Here we present a mechanism for realizing a much larger coupling of inversion-symmetry breaking to itinerant surface electrons than is typically achieved. The key element is a pronounced asymmetry of surface hopping energies-that is, a kinetic-energy-coupled inversion-symmetry breaking, the energy scale of which is a substantial fraction of the bandwidth. Using spin- and angle-resolved photoemission spectroscopy, we demonstrate that such a strong inversion-symmetry breaking, when combined with spin-orbit interactions, can mediate Rashba-like spin splittings that are much larger than would typically be expected. The energy scale of the inversion-symmetry breaking that we achieve is so large that the spin splitting in the CoO₂- and RhO₂-derived surface states of delafossite oxides becomes controlled by the full atomic spin-orbit coupling of the 3d and 4d transition metals, resulting in some of the largest known Rashba-like spin splittings. The core structural building blocks that facilitate the bandwidth-scaled inversion-symmetry breaking are common to numerous materials. Our findings therefore provide opportunities for creating spin-textured states and suggest routes to interfacial control of inversion-symmetry breaking in designer heterostructures of oxides and other material classes.

Strain-induced conductivity accelerated recoveries in LaAlO3/SrTiO3 heterostructure with millimeter scale

The transport and magnetic properties of LaAlO₃/SrTiO₃ (LAO/STO) heterostructure have been studied during cooling and warming. The strain gradient perpendicular to the surface of the heterostructure increases with the thickness of LAO film. The conductivity accelerated recoveries (CAR) are found at 80 K and 176 K in the interface of LAO/STO sample with millimeter scale, and are more obvious for thicker LAO layers during warming. These two recovering temperatures correspond to the migrating energies of oxygen single vacancy and divacancy trapped by polarized domain walls, separately. This indicated that domain walls diffuse along the longitudinal direction and expand to larger area due the strain gradient perpendicular to the interface. The stable and precise accelerating recovering temperatures make the sample at a larger scale a potential widely applied temperature standard reference. The magnetization measurements reveal the coexistence of paramagnetic and diamagnetic in the LAO/STO samples at whole temperature from 2 K to 300 K. The abnormal electric resistance rise is observed with the decreasing temperature below 25 K for the samples of 7 and 15 LAO layers. This anomaly is attributed to the Kondo effect below 25 K and weak anti-localization below 5 K due to the weightier paramagnetic content. The larger diamagnetic content suppresses these contributions in 25 LAO layers sample. This work provided an insightful view that the strain modified structure domain leads to the enhancement of CAR effect, which helps to achieve a better understanding of domain related physics in the LAO/STO system.

The transport and magnetic properties of LaAlO₃/SrTiO₃ (LAO/STO) heterostructure have been studied during cooling and warming.

Room-Temperature Giant Charge-to-Spin Conversion at the SrTiO3-LaAlO3 Oxide Interface

The two-dimensional electron gas (2DEG) formed at the interface between SrTiO₃ (STO) and LaAlO₃ (LAO) insulating layer is supposed to possess strong Rashba spin-orbit coupling. To date, the inverse Edelstein effect (i.e., spin-to-charge conversion) in the 2DEG layer is reported. However, the direct effect of charge-to-spin conversion, an essential ingredient for spintronic devices in a current-induced spin-orbit torque scheme, has not been demonstrated yet. Here we show, for the first time, a highly efficient spin generation with the efficiency of ∼6.3 in the STO/LAO/CoFeB structure at room temperature by using spin torque ferromagnetic resonance. In addition, we suggest that the spin transmission through the LAO layer at a high temperature range is attributed to the inelastic tunneling via localized states in the LAO band gap. Our findings may lead to potential applications in the oxide insulator based spintronic devices.

Link between the Superconducting Dome and Spin-Orbit Interaction in the (111) LaAlO_{3}/SrTiO_{3} Interface

We measure the gate voltage (V_{g}) dependence of the superconducting properties and the spin-orbit interaction in the (111)-oriented LaAlO_{3}/SrTiO_{3} interface. Superconductivity is observed in a dome-shaped region in the carrier density-temperature phase diagram with the maxima of superconducting transition temperature T_{c} and the upper critical fields lying at the same V_{g}. The spin-orbit interaction determined from the superconducting parameters and confirmed by weak-antilocalization measurements follows the same gate voltage dependence as T_{c}. The correlation between the superconductivity and spin-orbit interaction as well as the enhancement of the parallel upper critical field, well beyond the Chandrasekhar-Clogston limit, suggest that superconductivity and the spin-orbit interaction are linked in a nontrivial fashion. We propose possible scenarios to explain this unconventional behavior.

Insulator-to-Metal Transition at Oxide Interfaces Induced by WO3 Overlayers

Interfaces between complex oxides constitute a unique playground for two-dimensional electron systems (2DESs), where superconductivity and magnetism can arise from combinations of bulk insulators. The 2DES at the LaAlO₃/SrTiO₃ interface is one of the most studied in this regard, and its origin is determined by the polar field in LaAlO₃ as well as by the presence of point defects, like oxygen vacancies and intermixed cations. These defects usually reside in the conduction channel and are responsible for a decrease of the electronic mobility. In this work, we use an amorphous WO₃ overlayer to obtain a high-mobility 2DES in WO₃/LaAlO₃/SrTiO₃ heterostructures. The studied system shows a sharp insulator-to-metal transition as a function of both LaAlO₃ and WO₃ layer thickness. Low-temperature magnetotransport reveals a strong magnetoresistance reaching 900% at 10 T and 1.5 K, the presence of multiple conduction channels with carrier mobility up to 80 000 cm² V^-1 s^-1, and quantum oscillations of conductance.

Imaging and tuning polarity at SrTiO3 domain walls

Electrostatic fields tune the ground state of interfaces between complex oxide materials. Electronic properties, such as conductivity and superconductivity, can be tuned and then used to create and control circuit elements and gate-defined devices. Here we show that naturally occurring twin boundaries, with properties that are different from their surrounding bulk, can tune the LaAlO₃/SrTiO₃ interface 2DEG at the nanoscale. In particular, SrTiO₃ domain boundaries have the unusual distinction of remaining highly mobile down to low temperatures, and were recently suggested to be polar. Here we apply localized pressure to an individual SrTiO₃ twin boundary and detect a change in LaAlO₃/SrTiO₃ interface current distribution. Our data directly confirm the existence of polarity at the twin boundaries, and demonstrate that they can serve as effective tunable gates. As the location of SrTiO₃ domain walls can be controlled using external field stimuli, our findings suggest a novel approach to manipulate SrTiO₃-based devices on the nanoscale.

Giant Tunability of the Two-Dimensional Electron Gas at the Interface of γ-Al2O3/SrTiO3

Two-dimensional electron gases (2DEGs) formed at the interface between two oxide insulators provide a rich platform for the next generation of electronic devices. However, their high carrier density makes it rather challenging to control the interface properties under a low electric field through a dielectric solid insulator, that is, in the configuration of conventional field-effect transistors. To surpass this long-standing limit, we used ionic liquids as the dielectric layer for electrostatic gating of oxide interfaces in an electric double layer transistor (EDLT) configuration. Herein, we reported giant tunability of the physical properties of 2DEGs at the spinel/perovskite interface of γ-Al₂O₃/SrTiO₃ (GAO/STO). By modulating the carrier density thus the band filling with ionic-liquid gating, the system experiences a Lifshitz transition at a critical carrier density of 3.0 × 10¹³ cm^-2, where a remarkably strong enhancement of Rashba spin-orbit interaction and an emergence of Kondo effect at low temperatures are observed. Moreover, as the carrier concentration depletes with decreasing gating voltage, the electron mobility is enhanced by more than 6 times in magnitude, leading to the observation of clear quantum oscillations. The great tunability of GAO/STO interface by EDLT gating not only shows promise for design of oxide devices with on-demand properties but also sheds new light on the electronic structure of 2DEG at the nonisostructural spinel/perovskite interface.

On-Demand Spin-Orbit Interaction from Which-Layer Tunability in Bilayer Graphene

Spin-orbit interaction (SOI) that is gate-tunable over a broad range is essential to exploiting novel spin phenomena. Achieving this regime has remained elusive because of the weakness of the underlying relativistic coupling and lack of its tunability in solids. Here we outline a general strategy that enables exceptionally high tunability of SOI through creating a which-layer spin-orbit field inhomogeneity in graphene multilayers. An external transverse electric field is applied to shift carriers between the layers with strong and weak SOI. Because graphene layers are separated by subnanometer scales, exceptionally high tunability of SOI can be achieved through a minute carrier displacement. A detailed analysis of the experimentally relevant case of bilayer graphene on a semiconducting transition metal dichalchogenide substrate is presented. In this system, a complete tunability of SOI amounting to its ON/OFF switching can be achieved. New opportunities for spin control are exemplified with electrically driven spin resonance and topological phases with different quantized intrinsic valley Hall conductivities.

Optical Manipulation of Rashba Spin-Orbit Coupling at SrTiO3-Based Oxide Interfaces

Spin-orbit coupling (SOC) plays a crucial role for spintronics applications. Here we present the first demonstration that the Rashba SOC at the SrTiO₃-based interfaces is highly tunable by photoinduced charge doping, that is, optical gating. Such optical manipulation is nonvolatile after the removal of the illumination in contrast to conventional electrostatic gating and also erasable via a warming-cooling cycle. Moreover, the SOC evolutions tuned by illuminations with different wavelengths at various gate voltages coincide with each other in different doping regions and collectively form an upward-downward trend curve: In response to the increase of conductivity, the SOC strength first increases and then decreases, which can be attributed to the orbital hybridization of Ti 3d subbands. More strikingly, the optical manipulation is effective enough to tune the interferences of Bloch wave functions from constructive to destructive and therefore to realize a transition from weak localization to weak antilocalization. The present findings pave a way toward the exploration of photoinduced nontrivial quantum states and the design of optically controlled spintronic devices.

Angle-resolved photoemission spectroscopy studies of metallic surface and interface states of oxide insulators

Over the last decade, conducting states embedded in insulating transition metal oxides (TMOs) have served as gateways to discovering and probing surprising phenomena that can emerge in complex oxides, while also opening opportunities for engineering advanced devices. These states are commonly realized at thin film interfaces, such as the well-known case of LaAlO3 (LAO) grown on SrTiO3 (STO). In recent years, the use of angle-resolved photoemission spectroscopy (ARPES) to investigate the k-space electronic structure of such materials led to the discovery that metallic states can also be formed on the bare surfaces of certain TMOs. In this topical review, we report on recent studies of low-dimensional metallic states confined at insulating oxide surfaces and interfaces as seen from the perspective of ARPES, which provides a direct view of the occupied band structure. While offering a fairly broad survey of progress in the field, we draw particular attention to STO, whose surface is so far the best-studied, and whose electronic structure is probably of the most immediate interest, given the ubiquitous use of STO substrates as the basis for conducting oxide interfaces. The ARPES studies provide crucial insights into the electronic band structure, orbital character, dimensionality/confinement, spin structure, and collective excitations in STO surfaces and related oxide surface/interface systems. The obtained knowledge increases our understanding of these complex materials and gives new perspectives on how to manipulate their properties.

Highly Mobile Two-Dimensional Electron Gases with a Strong Gating Effect at the Amorphous LaAlO3/KTaO3 Interface

Two-dimensional electron gas (2DEG) at the perovskite oxide interface exhibits a lot of exotic properties, presenting a promising platform for the exploration of emergent phenomena. While most of the previous works focused on SrTiO₃-based 2DEG, here we report on the fabrication of high-quality 2DEGs by growing an amorphous LaAlO₃ layer on a (001)-orientated KTaO₃ substrate, which is a 5d metal oxide with a polar surface, at a high temperature that is usually adopted for crystalline LaAlO₃. Metallic 2DEGs with a Hall mobility as high as ∼2150 cm²/(V s) and a sheet carrier density as low as 2 × 10¹² cm^-2 are obtained. For the first time, the gating effect on the transport process is studied, and its influence on spin relaxation and inelastic and elastic scattering is determined. Remarkably, the spin relaxation time can be strongly tuned by a back gate. It is reduced by a factor of ∼69 while the gate voltage is swept from -25 to +100 V. The mechanism that dominates the spin relaxation is elucidated.

Spin-orbit interaction and Kondo scattering at the PrAlO3/SrTiO3 interface: effects of oxygen content

We report the effects of oxygen pressure during growth ([Formula: see text]) on the electronic and magnetic properties of PrAlO₃ films grown on [Formula: see text]-terminated SrTiO₃ substrates. Resistivity measurements show an increase in the sheet resistance as [Formula: see text] is increased. The saturation of the sheet resistance down to 0.3 K is consistent with Kondo theory for [Formula: see text] torr. Resistivity data fits indicate Kondo temperatures of 16-18 K. For the [Formula: see text] sample, we measured a moderate positive magnetoresistance (MR) due to a strong spin-orbit (SO) interaction at low magnetic fields that evolves into a larger negative MR at high fields due to the Kondo effect. Analysis of the MR data permitted the extraction of the SO interaction critical field for the [Formula: see text] torr interface ([Formula: see text] T). We observed high positive MR for the least oxygenated sample, where a fraction of the n-type carriers are derived from oxygen vacancies and possible cation interdiffusion; for this [Formula: see text] torr sample, Hall effect data indicate a thick conducting layer. Its extremely high MR (∼[Formula: see text]) is attributed to classical behavior due to a distribution of mobilities.

Charge transfer driven emergent phenomena in oxide heterostructures

Complex oxides exhibit many intriguing phenomena, including metal-insulator transition, ferroelectricity/multiferroicity, colossal magnetoresistance and high transition temperature superconductivity. Advances in epitaxial thin film growth techniques enable us to combine different complex oxides with atomic precision and form an oxide heterostructure. Recent theoretical and experimental work has shown that charge transfer across oxide interfaces generally occurs and leads to a great diversity of emergent interfacial properties which are not exhibited by bulk constituents. In this report, we review mechanisms and physical consequence of charge transfer across interfaces in oxide heterostructures. Both theoretical proposals and experimental measurements of various oxide heterostructures are discussed and compared. We also review the theoretical methods that are used to calculate charge transfer across oxide interfaces and discuss the success and challenges in theory. Finally, we present a summary and perspectives for future research.

Strong evidence for d-electron spin transport at room temperature at a LaAlO3/SrTiO3 interface

A d-orbital electron has an anisotropic electron orbital and is a source of magnetism. The realization of a two-dimensional electron gas (2DEG) embedded at a LaAlO₃/SrTiO₃ interface surprised researchers in materials and physical sciences because the 2DEG consists of 3d-electrons of Ti with extraordinarily large carrier mobility, even in the insulating oxide heterostructure. To date, a wide variety of physical phenomena, such as ferromagnetism and the quantum Hall effect, have been discovered in this 2DEG system, demonstrating the ability of d-electron 2DEG systems to provide a material platform for the study of interesting physics. However, because of both ferromagnetism and the Rashba field, long-range spin transport and the exploitation of spintronics functions have been believed difficult to implement in d-electron 2DEG systems. Here, we report the experimental demonstration of room-temperature spin transport in a d-electron-based 2DEG at a LaAlO₃/SrTiO₃ interface, where the spin relaxation length is about 300 nm. Our finding, which counters the conventional understandings of d-electron 2DEGs, highlights the spin-functionality of conductive oxide systems and opens the field of d-electron spintronics.

Orbital angular momentum analysis for giant spin splitting in solids and nanostructures

Giant spin splitting (GSS) of electronic bands, which is several orders of magnitude greater than the standard Rashba effect has been observed in various systems including noble-metal surfaces and thin films of transition-metal dichalcogenides. Previous studies reported that orbital angular momentum (OAM) is not quenched in some GSS materials and that the atomic spin-orbit interaction (SOI) generates spin splitting in some solid states via the interorbital hopping. Although the unquenched OAM may be closely related to the interorbital hopping, their relationship is hardly studied in the aspect of using the unquenched OAM as a control parameter of GSS. Here, we analyze OAM in GSS materials by using the interorbital-hopping mechanism and first-principles calculations. We report that the interatomic hopping between different-parity orbitals, which is generated by specific broken mirror symmetry, produces k-dependent OAM, resulting in valley-dependent GSS in WSe₂ monolayer, Rashba-type GSS in Au (111) surface, and Dresselhaus-type GSS in bulk HgTe. We also demonstrate systematic control of OAM by pressure, external fields, and substrates, thereby controlling the spin splitting, and discuss the temperature dependence of OAM. Our results provide a simplified picture for systematic design and control of GSS materials.

Ferroelectricity, Antiferroelectricity, and Ultrathin 2D Electron/Hole Gas in Multifunctional Monolayer MXene

The presence of ferroelectric polarization in 2D materials is extremely rare due to the effect of the surface depolarizing field. Here, we use first-principles calculations to show the largest out-of-plane polarization observed in a monolayer in functionalized MXenes (Sc₂CO₂). The switching of polarization in this new class of ferroelectric materials occurs through a previously unknown intermediate antiferroelectric structure, thus establishing three states for applications in low-dimensional nonvolatile memory. We show that the armchair domain interface acts as an 1D metallic nanowire separating two insulating domains. In the case of the van der Waals bilayer we observe, interestingly, the presence of an ultrathin 2D electron/hole gas (2DEG) on the top/bottom layers, respectively, due to the redistrubution of charge carriers. The 2DEG is nondegenerate due to spin-orbit coupling, thus paving the way for spin-orbitronic devices. The coexistence of ferroelectricity, antiferroelectricity, 2DEG, and spin-orbit splitting in this system suggests that such 2D polar materials possess high potential for device application in a multitude of fields ranging from nanoelectronics to photovoltaics.

Potential Fluctuations at Low Temperatures in Mesoscopic-Scale SmTiO3/SrTiO3/SmTiO3 Quantum Well Structures

Heterointerfaces of SrTiO₃ with other transition metal oxides make up an intriguing family of systems with a bounty of coexisting and competing physical orders. Some examples, such as LaAlO₃/SrTiO₃, support a high carrier density electron gas at the interface whose electronic properties are determined by a combination of lattice distortions, spin-orbit coupling, defects, and various regimes of magnetic and charge ordering. Here, we study electronic transport in mesoscale devices made with heterostructures of SrTiO₃ sandwiched between layers of SmTiO₃, in which the transport properties can be tuned from a regime of Fermi-liquid like resistivity (ρ ∝ T²) to a non-Fermi liquid (ρ ∝ T^5/3) by controlling the SrTiO₃ thickness. In mesoscale devices at low temperatures, we find unexpected voltage fluctuations that grow in magnitude as T is decreased below 20 K, are suppressed with increasing contact electrode size, and are independent of the drive current and contact spacing distance. Magnetoresistance fluctuations are also observed, which are reminiscent of universal conductance fluctuations but not entirely consistent with their conventional properties. Candidate explanations are considered, and a mechanism is suggested based on mesoscopic temporal fluctuations of the Seebeck coefficient. An improved understanding of charge transport in these model systems, especially their quantum coherent properties, may lead to insights into the nature of transport in strongly correlated materials that deviate from Fermi liquid theory.

Two-Dimensional Large Gap Topological Insulators with Tunable Rashba Spin-Orbit Coupling in Group-IV films

The coexistence of nontrivial topology and giant Rashba splitting, however, has rare been observed in two-dimensional (2D) films, limiting severely its potential applications at room temperature. Here, we through first-principles calculations to propose a series of inversion-asymmetric group-IV films, ABZ₂ (A ≠ B = Si, Ge, Sn, Pb; Z = F, Cl, Br), whose stability are confirmed by phonon spectrum calculations. The analyses of electronic structures reveal that they are intrinsic 2D TIs with a bulk gap as large as 0.74 eV, except for GeSiF₂, SnSiCl₂, GeSiCl₂ and GeSiBr₂ monolayers which can transform from normal to topological phases under appropriate tensile strain of 4, 4, 5, and 4%, respectively. The nontrivial topology is identified by Z₂ topological invariant together with helical edge states, as well as the berry curvature of these systems. Another prominent intriguing feature is the giant Rashba spin splitting with a magnitude reaching 0.15 eV, the largest value reported in 2D films so far. The tunability of Rashba SOC and band topology can be realized through achievable compressive/tensile strains (−4 ~ 6%). Also, the BaTe semiconductor is an ideal substrate for growing ABZ₂ films without destroying their nontrivial topology.

Mobility Modulation and Suppression of Defect Formation in Two-Dimensional Electron Systems by Charge-Transfer Management

Electron mobility is one of the most-debated key attributes of low-dimensional electron systems emerging at complex oxide heterointerfaces. However, a common understanding of how electron mobility can be optimized in these systems has not been achieved so far. Here, we discuss a novel approach for achieving a systematic increase in electron mobility in polar/nonpolar perovskite interfaces by suppressing the thermodynamically required defect formation at the nanoscale. We discuss the transport properties of electron gases established at interfaces between SrTiO₃ and various polar perovskites [LaAlO₃, NdGaO₃, and (La,Sr)(Al,Ta)O₃], allowing for the individual variation of epitaxial strain and charge transfer among these epitaxial interfaces. As we show, the reduced charge transfer at (La,Sr)(Al,Ta)O₃/SrTiO₃ interfaces yields a systematic increase in electron mobility, while the reduced epitaxial strain has only minor impact. As thermodynamic continuum simulations suggest, the charge transfer across these interfaces affects both the spatial distribution of electrons and the background distribution of ionic defects, acting as major scatter centers within the potential well. Easing charge transfer in (La,Sr)(Al,Ta)O₃/SrTiO₃ yields an enlarged spatial separation of mobile charge carriers and scattering centers, as well as a reduced driving force for the formation of ionic defects at the nanoscale. Our results suggest a general recipe for achieving electron enhancements at oxide heterostructure interfaces and provide new perspectives for atomistic understanding of electron scattering in these systems.

Gate-Tunable Band Structure of the LaAlO_{3}-SrTiO_{3} Interface

The two-dimensional electron system at the interface between LaAlO_{3} and SrTiO_{3} has several unique properties that can be tuned by an externally applied gate voltage. In this work, we show that this gate tunability extends to the effective band structure of the system. We combine a magnetotransport study on top-gated Hall bars with self-consistent Schrödinger-Poisson calculations and observe a Lifshitz transition at a density of 2.9×10^{13}cm^{-2}. Above the transition, the carrier density of one of the conducting bands decreases with increasing gate voltage. This surprising decrease is accurately reproduced in the calculations if electronic correlations are included. These results provide a clear, intuitive picture of the physics governing the electronic structure at complex-oxide interfaces.

Room-Temperature Quantum Transport Signatures in Graphene/LaAlO3 /SrTiO3 Heterostructures

High mobility graphene field-effect devices, fabricated on the complex-oxide heterostructure LaAlO₃ /SrTiO₃ , exhibit quantum interference signatures up to room temperature. The oxide material is believed to play a critical role in suppressing short-range and phonon contributions to scattering. The ability to maintain pseudospin coherence at room temperature holds promise for the realization of new classical and quantum information technologies.

Observation of inverse Edelstein effect in Rashba-split 2DEG between SrTiO3 and LaAlO3 at room temperature

The Rashba physics has been intensively studied in the field of spin orbitronics for the purpose of searching novel physical properties and the ferromagnetic (FM) magnetization switching for technological applications. We report our observation of the inverse Edelstein effect up to room temperature in the Rashba-split two-dimensional electron gas (2DEG) between two insulating oxides, SrTiO3 and LaAlO3, with the LaAlO3 layer thickness from 3 to 40 unit cells (UC). We further demonstrate that the spin voltage could be markedly manipulated by electric field effect for the 2DEG between SrTiO3 and 3-UC LaAlO3. These results demonstrate that the Rashba-split 2DEG at the complex oxide interface can be used for efficient charge-and-spin conversion at room temperature for the generation and detection of spin current.

Superconductivity and spin-orbit coupling in non-centrosymmetric materials: a review

In non-centrosymmetric superconductors, where the crystal structure lacks a centre of inversion, parity is no longer a good quantum number and an electronic antisymmetric spin-orbit coupling (ASOC) is allowed to exist by symmetry. If this ASOC is sufficiently large, it has profound consequences on the superconducting state. For example, it generally leads to a superconducting pairing state which is a mixture of spin-singlet and spin-triplet components. The possibility of such novel pairing states, as well as the potential for observing a variety of unusual behaviors, led to intensive theoretical and experimental investigations. Here we review the experimental and theoretical results for superconducting systems lacking inversion symmetry. Firstly we give a conceptual overview of the key theoretical results. We then review the experimental properties of both strongly and weakly correlated bulk materials, as well as two dimensional systems. Here the focus is on evaluating the effects of ASOC on the superconducting properties and the extent to which there is evidence for singlet-triplet mixing. This is followed by a more detailed overview of theoretical aspects of non-centrosymmetric superconductivity. This includes the effects of the ASOC on the pairing symmetry and the superconducting magnetic response, magneto-electric effects, superconducting finite momentum pairing states, and the potential for non-centrosymmetric superconductors to display topological superconductivity.

Tunable Positive to Negative Magnetoresistance in Atomically Thin WTe2

Transitional metal ditelluride WTe₂ has been extensively studied owing to its intriguing physical properties like nonsaturating positive magnetoresistance and being possibly a type-II Weyl semimetal. While surging research activities were devoted to the understanding of its bulk properties, it remains a substantial challenge to explore the pristine physics in atomically thin WTe₂. Here, we report a successful synthesis of mono- to few-layer WTe₂ via chemical vapor deposition. Using atomically thin WTe₂ nanosheets, we discover a previously inaccessible ambipolar behavior that enables the tunability of magnetoconductance of few-layer WTe₂ from weak antilocalization to weak localization, revealing a strong electrical field modulation of the spin-orbit interaction under perpendicular magnetic field. These appealing physical properties unveiled in this study clearly identify WTe₂ as a promising platform for exotic electronic and spintronic device applications.

Spin Orientation of Two-Dimensional Electrons Driven by Temperature-Tunable Competition of Spin-Orbit and Exchange-Magnetic Interactions

Finding ways to create and control the spin-dependent properties of two-dimensional electron states (2DESs) is a major challenge for the elaboration of novel spin-based devices. Spin-orbit and exchange-magnetic interactions (SOI and EMI) are two fundamental mechanisms that enable access to the tunability of spin-dependent properties of carriers. The silicon surface of HoRh₂Si₂ appears to be a unique model system, where concurrent SOI and EMI can be visualized and controlled by varying the temperature. The beauty and simplicity of this system lie in the 4f moments, which act as a multiple tuning instrument on the 2DESs, as the 4f projections parallel and perpendicular to the surface order at essentially different temperatures. Here we show that the SOI locks the spins of the 2DESs exclusively in the surface plane when the 4f moments are disordered: the Rashba-Bychkov effect. When the temperature is gradually lowered and the system experiences magnetic order, the rising EMI progressively competes with the SOI leading to a fundamental change in the spin-dependent properties of the 2DESs. The spins rotate and reorient toward the out-of-plane Ho 4f moments. Our findings show that the direction of the spins and the spin-splitting of the two-dimensional electrons at the surface can be manipulated in a controlled way by using only one parameter: the temperature.

Side Gate Tunable Josephson Junctions at the LaAlO3/SrTiO3 Interface

Novel physical phenomena arising at the interface of complex oxide heterostructures offer exciting opportunities for the development of future electronic devices. Using the prototypical LaAlO₃/SrTiO₃ interface as a model system, we employ a single-step lithographic process to realize gate-tunable Josephson junctions through a combination of lateral confinement and local side gating. The action of the side gates is found to be comparable to that of a local back gate, constituting a robust and efficient way to control the properties of the interface at the nanoscale. We demonstrate that the side gates enable reliable tuning of both the normal-state resistance and the critical (Josephson) current of the constrictions. The conductance and Josephson current show mesoscopic fluctuations as a function of the applied side gate voltage, and the analysis of their amplitude enables the extraction of the phase coherence and thermal lengths. Finally, we realize a superconducting quantum interference device in which the critical currents of each of the constriction-type Josephson junctions can be controlled independently via the side gates.

Nonlocal Spin Diffusion Driven by Giant Spin Hall Effect at Oxide Heterointerfaces

A two-dimensional electron gas emerged at a LaAlO₃/SrTiO₃ interface is an ideal system for "spin-orbitronics" as the structure itself strongly couple the spin and orbital degree of freedom through the Rashba spin-orbit interaction. One of core experiments toward this direction is the nonlocal spin transport measurement, which has remained elusive due to the low spin injection efficiency to this system. Here we bypass the problem by generating a spin current not through the spin injection from outside but instead through the inherent spin Hall effect and demonstrate the nonlocal spin transport. The analysis on the nonlocal spin voltage, confirmed by the signature of a Larmor spin precession and its length dependence, displays that both D'yakonov-Perel' and Elliott-Yafet mechanisms involve in the spin relaxation at low temperature. Our results show that the oxide heterointerface is highly efficient in spin-charge conversion with exceptionally strong spin Hall coefficient γ ∼ 0.15 ± 0.05 and could be an outstanding platform for the study of coupled charge and spin transport phenomena and their electronic applications.

Highly efficient and tunable spin-to-charge conversion through Rashba coupling at oxide interfaces

The spin-orbit interaction couples the electrons' motion to their spin. As a result, a charge current running through a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronic functionalities and devices, some of which do not require any ferromagnetic material. However, the interconversion efficiency of SHE and ISHE (spin Hall angle) is a bulk property that rarely exceeds ten percent, and does not take advantage of interfacial and low-dimensional effects otherwise ubiquitous in spintronic hetero- and mesostructures. Here, we make use of an interface-driven spin-orbit coupling mechanism-the Rashba effect-in the oxide two-dimensional electron system (2DES) LaAlO₃/SrTiO₃ to achieve spin-to-charge conversion with unprecedented efficiency. Through spin pumping, we inject a spin current from a NiFe film into the oxide 2DES and detect the resulting charge current, which can be strongly modulated by a gate voltage. We discuss the amplitude of the effect and its gate dependence on the basis of the electronic structure of the 2DES and highlight the importance of a long scattering time to achieve efficient spin-to-charge interconversion.

Observation of Orbital Order in the Half-Filled 4f Gd Compound

Half-filled electron systems, even with the maximized spin angular moment, have been given little attention because of their zero-orbital angular moment according to Hund's rule. Nevertheless, there are several measurements that show evidence of a nonzero orbital moment as well as spin-orbit coupling. Here we report for the first time the orbital order in a half-filled 4f-electron system GdB_{4}, using the resonant soft x-ray scattering at Gd M_{4,5}-edges. Furthermore, we discovered that the development of this orbital order is strongly coupled with the antiferromagnetic spin order. These results clearly demonstrate that even in half-filled electron systems the orbital angular moment can be an important parameter to describe material properties, and may provide significant opportunities for tailoring new correlated electron systems.

A Metal-Insulator Transition of the Buried MnO2 Monolayer in Complex Oxide Heterostructure

A novel artificially created MnO₂ monolayer system is demonstrated in atomically controlled epitaxial perovskite heterostructures. With careful design of different electrostatic boundary conditions, a magnetic transition as well as a metal-insulator transition of the MnO₂ monolayer is unveiled, providing a fundamental understanding of dimensionality-confined strongly correlated electron systems and a direction to design new electronic devices.

Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System

Carrier density and disorder are two crucial parameters that control the properties of correlated two-dimensional electron systems. In order to disentangle their individual contributions to quantum phenomena, independent tuning of these two parameters is required. Here, by utilizing a hybrid liquid/solid electric dual-gate geometry acting on the conducting LaAlO₃/SrTiO₃ heterointerface, we obtain an additional degree of freedom to strongly modify the electron confinement profile and thus the strength of interfacial scattering, independent from the carrier density. A dual-gate controlled nonlinear Hall effect is a direct manifestation of this profile, which can be quantitatively understood by a Poisson-Schrödinger sub-band model. In particular, the large nonlinear dielectric response of SrTiO₃ enables a very wide range of tunable density and disorder, far beyond that for conventional semiconductors. Our study provides a broad framework for understanding various reported phenomena at the LaAlO₃/SrTiO₃ interface.

Large linear magnetoresistance in heavily-doped Nb:SrTiO3 epitaxial thin films

Interaction between electrons has long been a focused topic in condensed-matter physics since it has led to the discoveries of astonishing phenomena, for example, high-T_c superconductivity and colossal magnetoresistance (CMR) in strongly-correlated materials. In the study of strongly-correlated perovskite oxides, Nb-doped SrTiO₃ (Nb:SrTiO₃) has been a workhorse not only as a conducting substrate, but also as a host possessing high carrier mobility. In this work, we report the observations of large linear magnetoresistance (LMR) and the metal-to-insulator transition (MIT) induced by magnetic field in heavily-doped Nb:STO (SrNb_0.2Ti_0.8O₃) epitaxial thin films. These phenomena are associated with the interplay between the large classical MR due to high carrier mobility and the electronic localization effect due to strong spin-orbit coupling, implying that heavily Nb-doped Sr(Nb_0.2Ti_0.8)O₃ is promising for the application in spintronic devices.

Quantum interference in an interfacial superconductor

The two-dimensional superconductor that forms at the interface between the complex oxides lanthanum aluminate (LAO) and strontium titanate (STO) has several intriguing properties that set it apart from conventional superconductors. Most notably, an electric field can be used to tune its critical temperature (T_c; ref. 7), revealing a dome-shaped phase diagram reminiscent of high-T_c superconductors. So far, experiments with oxide interfaces have measured quantities that probe only the magnitude of the superconducting order parameter and are not sensitive to its phase. Here, we perform phase-sensitive measurements by realizing the first superconducting quantum interference devices (SQUIDs) at the LAO/STO interface. Furthermore, we develop a new paradigm for the creation of superconducting circuit elements, where local gates enable the in situ creation and control of Josephson junctions. These gate-defined SQUIDs are unique in that the entire device is made from a single superconductor with purely electrostatic interfaces between the superconducting reservoir and the weak link. We complement our experiments with numerical simulations and show that the low superfluid density of this interfacial superconductor results in a large, gate-controllable kinetic inductance of the SQUID. Our observation of robust quantum interference opens up a new pathway to understanding the nature of superconductivity at oxide interfaces.