Magnetoresistance in an all-organic-based spin valve

Strategies and applications of generating spin polarization in organic semiconductors

The advent of spintronics has undoubtedly revolutionized data storage, processing, and sensing applications. Organic semiconductors (OSCs), characterized by long spin relaxation times (>μs) and abundant spin-dependent properties, have emerged as promising materials for advanced spintronic applications. To successfully implement spin-related functions in organic spintronic devices, the four fundamental processes of spin generation, transport, manipulation, and detection form the main building blocks and are commonly in demand. Thereinto, the effective generation of spin polarization in OSCs is a precondition, but in practice, this has not been an easy task. In this context, considerable efforts have been made on this topic, covering novel materials systems, spin-dependent theories, and device fabrication technologies. In this review, we underline recent advances in external spin injection and organic property-induced spin polarization, according to the distinction between the sources of spin polarization. We focused mainly on summarizing and discussing both the physical mechanism and representative research on spin generation in OSCs, especially for various spin injection methods, organic magnetic materials, the chiral-induced spin selectivity effect, and the spinterface effect. Finally, the challenges and prospects that allow this topic to continue to be dynamic were outlined.

Dynamical Behavior of Pure Spin Current in Organic Materials

Growing concentration on the novel information processing technology and low-cost, flexible materials make the spintronics and organic materials appealing for the future interdisciplinary investigations. Organic spintronics, in this context, has arisen and witnessed great advances during the past two decades owing to the continuous innovative exploitation of the charge-contained spin polarized current. Albeit with such inspiring facts, charge-absent spin angular momentum flow, namely pure spin currents (PSCs) are less probed in organic functional solids. In this review, the past exploring journey of PSC phenomenon in organic materials are retrospected, including non-magnetic semiconductors and molecular magnets. Starting with the basic concepts and the generation mechanism for PSC, the representative experimental observations of PSC in the organic-based networks are subsequently demonstrated and summarized, by accompanying explicit discussion over the propagating mechanism of net spin itself in the organic media. Finally, future perspectives on PSC in organic materials are illustrated mainly from the material point of view, including single molecule magnets, complexes for the organic ligands framework as well as the lanthanide metal complexes, organic radicals, and the emerging 2D organic magnets.

Recent Progress of Organic Semiconductor Materials in Spintronics

Spintronics, a new discipline focusing on the spin-dependent transport process of electrons, has been developing rapidly. Spin valves are the most significant carriers of spintronics utilizing the spin freedom of electrons. It is expected to pierce "Moore's Law" and become the core component in processors of the next generation. Organic semiconductors advance in their adjustable band gap, weak spin-orbit coupling and hyperfine interaction, excellent film-forming property, having enormous promise for spin valves. Here, the principle of spin valves is introduced, and the history and progress in organic spin injection and transport materials are summarized. Then we analyze the influence of spinterface on device performance and introduce reliable methods of constructing organic spin valves. Finally, the challenges for spin valves are discussed, and the future is proposed. We aim to draw the attention of researchers to organic spin valves and promote further research in spintronics through this paper.

Response of Spin to Chiral Orbit and Phonon in Organic Chiral Ferrimagnetic Crystals

Achiral organic materials show nearly negligible orbit angular momentum, whereas organic ferrimagnets with chirality and reduced electron-lattice scattering could fundamentally bridge the gap between ferromagnetism and antiferromagnetism in the rapidly emerging field of ferrimagnetic spintronics. In this work, we report enantiomeric organic chiral ferrimagnets, where the chirality results from the molecular torsion by propeller-like arrangement of the donor and acceptor molecules. The ferrimagnetism results from the difference in electron-phonon coupling of the donor and acceptor inside the chiral crystals. Because the spin polarization is significantly dependent on the chirality, the magnetization of right-handed organic chiral ferrimagnetic crystals is larger than that of left-handed ones by 300% at 10 K. In addition, the processes of both excitation and recombination are strongly related to spin, phonon, and chiral orbit in these chiral ferrimagnets. Overall, both the organic chiral ferrimagnetism and spin chiroptical activities may substantially enrich the field of organic spintronics.

Molecular Compounds in Spintronic Devices: An Intricate Marriage of Chemistry and Physics

Spintronics, a flourishing new field of microelectronics, uses the electron spin for reading and writing information in modern computers and other spintronic devices with a low power consumption and high reliability. In a quest to increase the productivity of such devices, the use of molecular materials as a spacer layer allowed them to perform equally well or even better than conventional all-inorganic heterostructures from metals, alloys, or inorganic semiconductors. In this review, we survey various classes of chemical compounds that have already been tested for this purpose─from organic compounds and coordination complexes to organic-inorganic hybrid materials─since the creation of the first molecule-based spintronic device in 2002. Although each class has its advantages, drawbacks, and applications in molecular spintronics, together they allowed nonchemists to gain insights into spin-related effects and to propose new concepts in the design and fabrication of highly efficient spintronic devices. Other molecular compounds that chemistry could offer in great numbers may soon emerge as suitable spacers or even electrodes in flexible magnetic field sensors, nonvolatile memories, and multifunctional spintronic devices.

Two-dimensional heterotriangulene-based manganese organic frameworks: bipolar magnetic and half semiconductors with perpendicular magnetocrystalline anisotropy

Two-dimensional (2D) organic intrinsic magnetic semiconductors have potential applications in low-dimensional organic spintronic devices due to their remarkable physical properties. However, 2D metal-organic frameworks with magnetic and semiconducting properties are rare. In this work, the electronic and magnetic properties of 2D heterotriangulene-based manganese organic frameworks including triphenylamine (TPA) and triphenylborane (TPB) organic ligands with methylene (M), carbonyl (C) or oxygen (O) coordination groups were studied by first-principles calculations. XTPA-Mn (X = M and O) is a bipolar magnetic semiconductor with a large spin-flip band gap. CTPA-Mn and XTPB-Mn (X = M, C and O) are half semiconductors with perpendicular magnetocrystalline anisotropy. The electronic properties of materials ranging from half semiconductors to bipolar magnetic semiconductors appear in CTPA-Mn and XTPB-Mn (X = M and C) at biaxial strains. XTPA-Mn and XTPB-Mn with a frustrated antiferromagnetic configuration are semiconductors with good ductility and stability. These results enrich the diversity of 2D organic intrinsic magnetic semiconductors, which have potential applications in spintronic devices.

The Application of Organic Semiconductor Materials in Spintronics

π-Conjugated semiconductors, primarily composed of elements with low atomic number, are regarded as promising spin-transport materials due to the weak spin-orbit coupling interaction and hence long spin relaxation time. Moreover, a large number of additional functions of organic semiconductors (OSCs), such as the abundant photo-electric properties, flexibility, and tailorability, endow the organic spintronic devices more unique properties and functionalities. Particularly, the integration of the photo-electric functionality and excellent spin transport property of OSCs in a single spintronic device has even shown great potential for the realization of spin manipulation in OSCs. In this review, the application of OSCs in spintronic study will be succinctly discussed. As the most important and extensive application, the long-distance spin transport property of OSCs will be discussed first. Subsequently, several multifunctional spintronic devices based on OSCs will be summarized. After that, the organic-based magnets used for the electrodes of spintronic devices will be introduced. Finally, according to the latest progress, spin manipulation in OSCs via novel spintronic devices together with other prospects and challenges will be outlined.

Recent Advances in Molecular Spintronics: Multifunctional Spintronic Devices

The field of spintronics has triggered an enormous revolution in information storage since the first observation of giant magnetoresistance (GMR). Molecular semiconductors are characterized by having very long spin relaxation times up to milliseconds, and are thus widely considered to hold immense potential for spintronic applications. Along with the development of molecular spintronics, it is clear that the study of multipurpose spintronic devices has gradually grown into a new research and development direction. The abundant photoelectric properties of molecular semiconductors and the intriguing functionality of the spinterface, together with novel designs of device structures, have promoted the integration of multiple functions and different mechanisms into discrete spintronic devices. Here, according to the different relationships between the integrated mechanisms, multifunctional molecular spintronic devices containing parallel and interactive types are highlighted. This is followed by the introduction of pure-spin-current-type molecular spintronic devices that have already demonstrated great potential for multifunction exploration. Finally, the challenges and outlook that make this field young and energetic are outlined.

All-Organic Dual Spin Valves with Well-Resolved Four Resistive-States

The formation of all-organic dual spin valves (DSVs) with three organic spin-selective layers, that is, spin-injection, spin-detection, and an additional spin-filtering layer at the intermediate, is reported. As spin-selective layers, manganese- and cobalt phthalocyanines, which are well-known single-molecule magnets, are used in their immobilized forms, so that all-organic DSVs can be prefabricated for characterization. The three spin-selective layers have provided four configurations with at most two spin-flip interfaces enforcing spin-flipping at the two nonmagnetic organic spacer layers, for which copper phthalocyanine is used. Since a couple of the four configurations have exhibited similar resistivities, the degeneracy in the resistive-states is broken through asymmetric spin-injection and spin-detection layers and also through asymmetric thickness of the nonmagnetic spacer layers. When both the spin-flip interfaces are made operative independently, a 2-bit logic with four distinct resistive states can be achieved.

Magnetoresistance Effect and the Applications for Organic Spin Valves Using Molecular Spacers

Organic spin devices utilizing the properties of both spin and charge inherent in electrons have attracted extensive research interest in the field of future electronic device development. In the last decade, magnetoresistance effects, including giant magetoresistance and tunneling magnetoresistance, have been observed in organic spintronics. Significant progress has been made in understanding spin-dependent transport phenomena, such as spin injection or tunneling, manipulation, and detection in organic spintronics. However, to date, materials that are effective for preparing organic spin devices for commercial applications are still lacking. In this report, we introduce basic knowledge of the fabrication and evaluation of organic spin devices, and review some remarkable applications for organic spin valves using molecular spacers. The current bottlenecks that hinder further enhancement for the performance of organic spin devices is also discussed. This report presents some research ideas for designing organic spin devices operated at room temperature.

Spin-dependent transport and functional design in organic ferromagnetic devices

Organic ferromagnets are intriguing materials in that they combine ferromagnetic and organic properties. Although challenges in their synthesis still remain, the development of organic spintronics has triggered strong interest in high-performance organic ferromagnetic devices. This review first introduces our theory for spin-dependent electron transport through organic ferromagnetic devices, which combines an extended Su-Schrieffer-Heeger model with the Green's function method. The effects of the intrinsic interactions in the organic ferromagnets, including strong electron-lattice interaction and spin-spin correlation between π-electrons and radicals, are highlighted. Several interesting functional designs of organic ferromagnetic devices are discussed, specifically the concepts of a spin filter, multi-state magnetoresistance, and spin-current rectification. The mechanism of each phenomenon is explained by transmission and orbital analysis. These works show that organic ferromagnets are promising components for spintronic devices that deserve to be designed and examined in future experiments.

Tuning the Thermoelectric Properties of a Conducting Polymer through Blending with Open-Shell Molecular Dopants

Polymer thermoelectric devices are emerging as promising platforms by which to convert thermal gradients into electricity directly, and poly(3,4-ethylene dioxythiophene) doped with poly(styrenesulfonate) (

PEDOT

PSS) is a leading candidate in a number of these thermoelectric modules. Here, we implement the stable radical-bearing small molecule 4-hydroxy-2,2,6,6-tetramethylpiperidin-1-oxyl (TEMPO-OH) as an intermolecular dopant in order to tune the electrical conductivity, thermopower, and power factor of

PEDOT

PSS thin films. Specifically, we demonstrate that, at moderate loadings (∼2%, by weight) of the open-shell TEMPO-OH molecule, the thermopower of

PEDOT

PSS thin films is increased without a marked decline in the electrical conductivity of the material. This effect, in turn, allows for an optimization of the power factor in the composite organic materials, which is a factor of 2 greater than the pristine

PEDOT

PSS thin films. Furthermore, because the loading of TEMPO-OH is relatively low, we observe that there is little change in either the crystalline nature or surface topography of the composite films relative to the pristine

PEDOT

PSS films. Instead, we determine that the increase in the thermopower is due to the presence of stable radical sites within the

PEDOT

PSS that persist despite the highly acidic environment that occurs due to the presence of the poly(styrenesulfonate) moiety. Additionally, the oxidation-reduction-active (redox-active) nature of the TEMPO-OH small molecules provides a means by which to filter charges of different energy values. Therefore, these results demonstrate that a synergistic combination of an open-shell species and a conjugated polymer allows for enhanced thermoelectric properties in macromolecular systems, and as such, it offers the promise of a new design pathway in polymer thermoelectric materials.

Chemical Vapor Deposition of an Organic Magnet, Vanadium Tetracyanoethylene

Recent progress in the field of organic materials has yielded devices such as organic light emitting diodes (OLEDs) which have advantages not found in traditional materials, including low cost and mechanical flexibility. In a similar vein, it would be advantageous to expand the use of organics into high frequency electronics and spin-based electronics. This work presents a synthetic process for the growth of thin films of the room temperature organic ferrimagnet, vanadium tetracyanoethylene (V[TCNE]x, x~2) by low temperature chemical vapor deposition (CVD). The thin film is grown at <60 °C, and can accommodate a wide variety of substrates including, but not limited to, silicon, glass, Teflon and flexible substrates. The conformal deposition is conducive to pre-patterned and three-dimensional structures as well. Additionally this technique can yield films with thicknesses ranging from 30 nm to several microns. Recent progress in optimization of film growth creates a film whose qualities, such as higher Curie temperature (600 K), improved magnetic homogeneity, and narrow ferromagnetic resonance line-width (1.5 G) show promise for a variety of applications in spintronics and microwave electronics.

Magnetoresistance effect in rubrene-based spin valves at room temperature

We fabricate spin-valve devices with an Fe3O4/AlO/rubrene/Co stacking structure. Their magnetoresistance (MR) effects at room temperature and low temperatures are systemically investigated based on the measurement of MR curves, current-voltage response, etc. A large MR ratio of approximately 6% is achieved at room temperature, which is one of the highest MR ratios reported to date in organic spin valves. With decreasing measurement temperatures, we observe that the MR ratios increase because of decrease in spin scattering, and the width of the MR curves becomes larger owing to increase in the coercivity of the electrodes at low temperature. A nonlinear current-voltage dependence is clearly observed in these organic spin valves. From the measurement of MR curve for the spin valves with different rubrene layer thickness, we observe that the MR ratios monotonously decrease with increasing rubrene-layer thickness. We discuss the spin-dependent transport mechanisms in these devices based on our experimental results and the present theoretical analysis. Moreover, we note that the devices exhibit smaller MR ratios after annealing compared to their counterparts without annealing. On the basis of atomic force microscopy analysis of the organic films and device resistances, we deduce that the increase of interface spin scattering induced by large surface roughness after annealing most probably leads to reduction in the MR ratios.

Thin film synthesis of the organic-based magnet vanadium ethyl tricyanoethylenecarboxylate

We report the preparation and characterization of a new thin film organic-based magnet V[ETCEC]_x, with T_C of 161 ± 10 K, via low temperature chemical vapor deposition (CVD; T = 55 °C).

Prediction of half-semiconductor antiferromagnets with vanishing net magnetization

Using a self-consistent DFT + U approach, we found that spin-polarized electrons and zero magnetization co-exist in a 2D semiconductor codoped with transition metal pairs, meaning that promising candidates for spintronics can be achieved.

Thin-film deposition of an organic magnet based on vanadium methyl tricyanoethylenecarboxylate

The preparation and characterization of a new thin-film organic-based magnet V[MeTCEC]x (V = vanadium; MeTCEC = methyl tricaynoethylenecarboxylate) via low-temperature chemical vapor deposition (50 °C) is reported. These thin films exhibit room-temperature magnetic ordering and semiconducting behavior, demonstrating the ability of tuning their magnetic, and potentially spintronic, functionality via chemical modification of the organic ligand.

Aromatic molecules as spintronic devices

In this paper, we study the spin-dependent electron transport through aromatic molecular chains attached to two semi-infinite leads. We model this system taking into account different geometrical configurations which are all characterized by a tight binding Hamiltonian. Based on the Green's function approach with a Landauer formalism, we find spin-dependent transport in short aromatic molecules by applying external magnetic fields. Additionally, we find that the magnetoresistance of aromatic molecules can reach different values, which are dependent on the variations in the applied magnetic field, length of the molecules, and the interactions between the contacts and the aromatic molecule.

Carrier transport in the V[TCNE]x (TCNE = tetracyanoethylene; x ~ 2) organic-based magnet

The carrier transport of chemical vapor deposition (CVD) prepared films of the room temperature organic-based magnet V[TCNE]x (TCNE = tetracyanoethylene; x ~ 2) over a broad temperature and magnetic field range is reported. Due to disorder the [TCNE](·-) sites are located in statistically different environments, and their energies vary from site-to-site, which leads to tailing the density of states into the energy gap, creating electronic traps and suppressing the electron mobility. Conversely, these variations have little effect on the valence band derived from the octahedral V(II)3d(t(2g)) levels, and, hence, on the hole mobility. Presuming a Gaussian distribution of the energies of the localized states in the gap, a model that adequately describes the experimental data is proposed. In this model the T(-1) temperature dependent term was added to the Arrhenius activation energy, Ea, which effectively describes its decrease on cooling. The linear increase of positive magnetoresistance with magnetic field, as well as its weak temperature dependence [ is proportional to (1-T/Tc)(-1/2)] is discussed in terms of a small contribution to Ea associated with the change of magnetic energy.