Van der Waals Magnetic Electrode Transfer for Two-Dimensional Spintronic Devices

Two-dimensional (2D) materials are promising candidates for spintronic applications. Maintaining their atomically smooth interfaces during integration of ferromagnetic (FM) electrodes is crucial since conventional metal deposition tends to induce defects at the interfaces. Meanwhile, the difficulties in picking up FM metals with strong adhesion and in achieving conductance match between FM electrodes and spin transport channels make it challenging to fabricate high-quality 2D spintronic devices using metal transfer techniques. Here, we report a solvent-free magnetic electrode transfer technique that employs a graphene layer to assist in the transfer of FM metals. It also serves as part of the FM electrode after transfer for optimizing spin injection, which enables the realization of spin valves with excellent performance based on various 2D materials. In addition to two-terminal devices, we demonstrate that the technique is applicable for four-terminal spin valves with nonlocal geometry. Our results provide a promising future of realizing 2D spintronic applications using the developed magnetic electrode transfer technique.

Chirality Versus Symmetry: Electron's Spin Selectivity in Nonpolar Chiral Lead-Bromide Perovskites

In the last decade, chirality-induced spin selectivity (CISS), the spin-selective electron transport through chiral molecules, has been described in a large range of materials, from insulators to superconductors. Because more experimental studies are desired for the theoretical understanding of the CISS effect, chiral metal-halide semiconductors may contribute to the field thanks to their chiroptical and spintronic properties. In this regard, this work uses new chiral organic cations S-HP1A and R-HP1A (HP1A = 2-hydroxy-propyl-1-ammonium) to prepare 2D chiral halide perovskites (HPs) which crystallize in the enantiomorphic space groups P43 21 2 and P41 21 2, respectively. The fourfold symmetry induces antiferroelectricity along the stacking axis which, combined to incomplete Rashba-like splitting in each individual 2D polar layer, results in rare spin textures in the band structure. As revealed by magnetic conductive-probe atomic force microscopy (AFM) measurements, these materials show CISS effect with partial spin polarization (SP; ±40-45%). This incomplete effect is efficient enough to drive a chiro-spintronic device as demonstrated by the fabrication of spin valve devices with magnetoresistance (MR) responses up to 250 K. Therefore, these stable lead-bromide HP materials not only represent interesting candidates for spintronic applications but also reveal the importance of polar symmetry-breaking topology for spin selectivity.

Continuous room-temperature spin-injection modulation achieved by spin-filtering competition in molecular spin valves

Abundant spin-related phenomena that originate from interfaces between ferromagnetic electrodes and molecular semiconductors have greatly enriched research in spintronics, and they are considered promising for realizing novel spintronic functionalities in the future. However, despite great efforts, the interfacial effect cannot be precisely controlled to achieve steady and predictable functions, especially at room temperature, and this has gradually become a significant bottleneck in the development of molecular spintronics. In this study, an innovative spin-filtering-competition mechanism was first proposed to continuously modulate the interfacial effect in molecular spin valves at room temperature. To form this novel mechanism, the original spin-filtering effect from pure Co competed with the newly generated one, which was induced by the bonding effect between Co and LiF. Subsequently, by precisely controlling competition through LiF coverage on the Co surface, continuous modulation of the spin-injection process could be successfully achieved at room temperature. Spin polarization of the injected current and magnetoresistance effect could be actively controlled or their sign could be completely reversed through this novel mechanism. This study provided an innovative approach and theory for precisely controlling the spin-related interfacial effects, which may further promote the scientific and technological development of spintronics. This article is protected by copyright. All rights reserved.

CVD Bilayer Graphene Spin Valves with 26 μm Spin Diffusion Length at Room Temperature

We present inverted spin-valve devices fabricated from chemical vapor deposition (CVD)-grown bilayer graphene (BLG) that show more than a doubling in device performance at room temperature compared to state-of-the-art bilayer graphene spin valves. This is made possible by a polydimethylsiloxane droplet-assisted full-dry transfer technique that compensates for previous process drawbacks in device fabrication. Gate dependent Hanle measurements reveal spin lifetimes of up to 5.8 ns and a spin diffusion length of up to 26 μm at room temperature combined with a charge carrier mobility of about 24 000 cm²(V s)^-1 for the best device. Our results demonstrate that CVD-grown BLG shows equally good room temperature spin transport properties as both CVD-grown single-layer graphene and even exfoliated single-layer graphene.

Applied Trends in Magnetic Rare Earth/Transition Metal Alloys and Multilayers

Ferrimagnetic thin films formerly played a very important role in the development of information storage technology. Now they are again at the forefront of the rising field of spintronics. From new, more efficient magnetic recording media and sensors based on spin valves to the promising technologies envisaged by all-optical switching, ferrimagnets offer singular properties that deserve to be studies both from the point of view of fundamental physics and for applications. In this review, we will focus on ferrimagnetic thin films based on the combination of rare earths (RE) and transition metals (TM).

Recent Advances in Molecular Spintronics: Multifunctional Spintronic Devices

The field of spintronics has triggered an enormous revolution in information storage since the first observation of giant magnetoresistance (GMR). Molecular semiconductors are characterized by having very long spin relaxation times up to milliseconds, and are thus widely considered to hold immense potential for spintronic applications. Along with the development of molecular spintronics, it is clear that the study of multipurpose spintronic devices has gradually grown into a new research and development direction. The abundant photoelectric properties of molecular semiconductors and the intriguing functionality of the spinterface, together with novel designs of device structures, have promoted the integration of multiple functions and different mechanisms into discrete spintronic devices. Here, according to the different relationships between the integrated mechanisms, multifunctional molecular spintronic devices containing parallel and interactive types are highlighted. This is followed by the introduction of pure-spin-current-type molecular spintronic devices that have already demonstrated great potential for multifunction exploration. Finally, the challenges and outlook that make this field young and energetic are outlined.

A Local Study of the Transport Mechanisms in MoS2 Layers for Magnetic Tunnel Junctions

MoS₂-based vertical spintronic devices have attracted an increasing interest thanks to theoretical predictions of large magnetoresistance signals. However, experimental performances are still far from expectations. Here, we carry out the local electrical characterization of thin MoS₂ flakes in a Co/Al₂O₃/MoS₂ structure through conductive tip AFM measurements. We show that thin MoS₂ presents a metallic behavior with a strong lateral transport contribution that hinders the direct tunnelling through thin layers. Indeed, no resistance dependence is observed with the flake thickness. These findings reveal a spin depolarization source in the MoS₂-based spin valves, thus pointing to possible solutions to improve their spintronic properties.

Active Morphology Control for Concomitant Long Distance Spin Transport and Photoresponse in a Single Organic Device

Long distance spin transport and photoresponse are demonstrated in a single F16 CuPc spin valve. By introducing a low-temperature strategy for controlling the morphology of the organic layer during the fabrication of a molecular spin valve, a large spin-diffusion length up to 180 nm is achieved at room temperature. Magnetoresistive and photoresponsive signals are simultaneously observed even in an air atmosphere.

Ultra-Compact 100 × 100 μm² Footprint Hybrid Device with Spin-Valve Nanosensors

Magnetic field mapping with micrometric spatial resolution and high sensitivity is a challenging application, and the technological solutions are usually based on large area devices integrating discrete magnetic flux guide elements. In this work we demonstrate a high performance hybrid device with improved field sensitivity levels and small footprint, consisting of a ultra-compact 2D design where nanometric spin valve sensors are inserted within the gap of thin-film magnetic flux concentrators. Pole-sensor distances down to 400 nm are demonstrated using nanofabrication techniques combined with an optimized liftoff process. These 100 × 100 μm2 pixel sensors can be integrated in modular devices for surface mapping without moving parts.

Magnetoresistance effect in rubrene-based spin valves at room temperature

We fabricate spin-valve devices with an Fe3O4/AlO/rubrene/Co stacking structure. Their magnetoresistance (MR) effects at room temperature and low temperatures are systemically investigated based on the measurement of MR curves, current-voltage response, etc. A large MR ratio of approximately 6% is achieved at room temperature, which is one of the highest MR ratios reported to date in organic spin valves. With decreasing measurement temperatures, we observe that the MR ratios increase because of decrease in spin scattering, and the width of the MR curves becomes larger owing to increase in the coercivity of the electrodes at low temperature. A nonlinear current-voltage dependence is clearly observed in these organic spin valves. From the measurement of MR curve for the spin valves with different rubrene layer thickness, we observe that the MR ratios monotonously decrease with increasing rubrene-layer thickness. We discuss the spin-dependent transport mechanisms in these devices based on our experimental results and the present theoretical analysis. Moreover, we note that the devices exhibit smaller MR ratios after annealing compared to their counterparts without annealing. On the basis of atomic force microscopy analysis of the organic films and device resistances, we deduce that the increase of interface spin scattering induced by large surface roughness after annealing most probably leads to reduction in the MR ratios.