Large Tunable Spin-to-Charge Conversion in Ni80Fe20/Molybdenum Disulfide by Cu Insertion

Spin-to-charge conversion at the interface between magnetic materials and transition metal dichalcogenides has drawn great interest in the research efforts to develop fast and ultralow power consumption devices for spintronic applications. Here, we report room temperature observations of spin-to-charge conversion arising from the interface of Ni80Fe20 (Py) and molybdenum disulfide (MoS2). This phenomenon can be characterized by the inverse Edelstein effect length (λIEE), which is enhanced with decreasing MoS2 thicknesses, demonstrating the dominant role of spin-orbital coupling (SOC) in MoS2. The spin-to-charge conversion can be significantly improved by inserting a Cu interlayer between Py and MoS2, suggesting that the Cu interlayer can prevent magnetic proximity effect from the Py layer and protect the SOC on the MoS2 surface from exchange interactions with Py. Furthermore, the Cu-MoS2 interface can enhance the spin current and improve electronic transport. Our results suggest that tailoring the interface of magnetic heterostructures provides an alternative strategy for the development of spintronic devices to achieve higher spin-to-charge conversion efficiencies.

Motion of Two-Dimensional Excitons in Momentum Space Leads to Pseudospin Distribution Narrowing on the Bloch Sphere

Motional narrowing implies narrowing induced by motion; for example, in nuclear magnetic resonance, the thermally induced random motion of the nuclei in an inhomogeneous environment leads to a counterintuitive narrowing of the resonance line. Similarly, the excitons in monolayer semiconductors experience magnetic inhomogeneity: the electron-hole spin-exchange interaction manifests as an in-plane pseudomagnetic field with a periodically varying orientation inside the exciton band. The excitons undergo random momentum scattering and pseudospin precession repeatedly in this inhomogeneous magnetic environment, typically resulting in fast exciton depolarization. On the contrary, we show that such magnetic inhomogeneity averages out at high scattering rates due to motional narrowing. Physically, a faster exciton scattering leads to a narrower pseudospin distribution on the Bloch sphere, implying a nontrivial improvement in exciton polarization. The in-plane nature of the pseudomagnetic field enforces a contrasting scattering dependence between the circularly and linearly polarized excitons, providing a spectroscopic way to gauge the sample quality.

Vanadium Metal Doping of Monolayer MoS2 for p-Type Transistors and Fast-Speed Phototransistors

Modulating the electrical properties of two-dimensional (2D) materials is a fundamental prerequisite for their development to advanced electronic and optoelectronic devices. Substitutional doping has been demonstrated as an effective method for tuning the band structure in monolayer 2D materials. Here, we demonstrate a facile selective-area growth of vanadium-doped molybdenum disulfide (V-doped MoS2) flakes via pre-patterned vanadium-metal-assisted chemical vapor deposition (CVD). Optical microscopy characterization revealed the presence of flake arrays. Transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy were employed to identify the chemical composition and crystalline structure of as-grown flakes. Electrical measurements indicated a light p-type conduction behavior in monolayer V-doped MoS2. Furthermore, the response time of phototransistors based on V-doped MoS2 monolayers exhibited a remarkable capability of 3 ms, representing approximately 3 orders of magnitude faster response than that observed in pure MoS2 phototransistors. This work hereby provides a feasible approach to doping of 2D materials, promising a scalable pathway for the integration of these materials into emerging electronic and optoelectronic devices.

Four-Dimensional Physical Unclonable Functions and Cryptographic Applications Based on Time-Varying Chaotic Phosphorescent Patterns

Physical unclonable functions (PUFs) have attracted interest in demonstrating authentication and cryptographic processes for Internet of Things (IoT) devices. We demonstrated four-dimensional PUFs (4D PUFs) to realize time-varying chaotic phosphorescent randomness on MoS2 atomic seeds. By forming hybrid states involving more than one emitter with distinct lifetimes in 4D PUFs, irregular lifetime distribution throughout patterns functions as a time-varying disorder that is impossible to replicate. Moreover, we established a bit extraction process incorporating multiple 64 bit-stream challenges and experimentally obtained physical features of 4D PUFs, producing countless random 896 bit-stream responses. Furthermore, the weak and strong PUF models were conceptualized and demonstrated based on 4D PUFs, exhibiting superior cryptological performances, including randomness, uniqueness, degree of freedom, and independent bit ratio. Finally, the data encryption and decryption in pictures were performed by a single 4D PUF. Therefore, 4D PUFs could enhance the counterfeiting deterrent of existing optical PUFs and be used as an anticounterfeiting security strategy for advanced authentication and cryptographic processes of IoT devices.

Ab-initio transport model to study the thermoelectric performance of MoS2, MoSe2, and WS2 monolayers by using Boltzmann Transport Equation

The potential for thermoelectric applications of two-dimensional (2D) materials is quite promising. Using ab-initio calculations, we have investigated the electronic band structure, phonon band structure, electronic density of states (DOS), and phonon density of state (PDOS) of monolayers MoS 2 , MoSe 2 , and WS 2 . In order to compute the thermoelectric properties of monolayers MoS 2 , MoSe 2 , and WS 2 , we used the ab-initio model suggested by Faghaninia et al. "Phys. Rev. B 91, 235123 (2015)". Within this model, by using inputs from density functional theory (DFT) and considering all relevant elastic and inelastic scattering mechanisms, we have calculated the thermoelectric properties of monolayers MoS 2 , MoSe 2 , and WS 2 over various ranges of temperature (T) and carrier concentration (n). The obtained results of Seebeck coefficients (S) and Figure of merit (ZT) at T = 300 K for both n/p-types of monolayers MoS 2 , MoSe 2 , and WS 2 are in good agreement with the findings obtained by other models using the BTE within a constant relaxation time framework.

Boltzmann Switching MoS2 Metal-semiconductor Field-effect Transistors Enabled by Monolithic-oxide-gapped Metal Gates at the Schottky-Mott Limit

A gate stack that facilitates a high-quality interface and tight electrostatic control is crucial for realizing high-performance and low-power field-effect transistors (FETs). However, when constructing conventional metal-oxide-semiconductor structures with two-dimensional (2D) transition metal dichalcogenide channels, achieving these requirements becomes challenging due to inherent difficulties in obtaining high-quality gate dielectrics through native oxidation or film deposition. Here, we report a gate-dielectric-less device architecture of van der Waals Schottky gated metal-semiconductor FETs (vdW-SG MESFETs) using a molybdenum disulfide (MoS2) channel and surface-oxidized metal gates such as nickel and copper. Benefiting from the strong SG coupling, our MESFETs operate at remarkably low gate voltages, <0.5 V. Notably, they also exhibit Boltzmann-limited switching behavior featured by a subthreshold swing of ∼60 mV/dec and negligible hysteresis. These ideal FET characteristics are attributed to the formation of a Fermi-level (EF) pinning-free gate stack at the Schottky-Mott limit. Furthermore, we experimentally and theoretically confirm that EF depinning can be achieved by suppressing both metal-induced and disorder-induced gap states at the interface between the monolithic-oxide-gapped metal gate and the MoS2 channel. This work paves a new route for designing high-performance and energy-efficient 2D electronics. This article is protected by copyright. All rights reserved.

Detecting Hachimoji DNA: An Eight-Building-Block Genetic System with MoS2 and Janus MoSSe Monolayers

In the pursuit of personalized medicine, the development of efficient, cost-effective, and reliable DNA sequencing technology is crucial. Nanotechnology, particularly the exploration of two-dimensional materials, has opened different avenues for DNA nucleobase detection, owing to their impressive surface-to-volume ratio. This study employs density functional theory with van der Waals corrections to methodically scrutinize the adsorption behavior and electronic band structure properties of a DNA system composed of eight hachimoji nucleotide letters adsorbed on both MoS2 and MoSSe monolayers. Through a comprehensive conformational search, we pinpoint the most favorable adsorption sites, quantifying their adsorption energies and charge transfer properties. The analysis of electronic band structure unveils the emergence of flat bands in close proximity to the Fermi level post-adsorption, a departure from the pristine MoS2 and MoSSe monolayers. Furthermore, leveraging the nonequilibrium Green's function approach, we compute the current-voltage characteristics, providing valuable insights into the electronic transport properties of the system. All hachimoji bases exhibit physisorption with a horizontal orientation on both monolayers. Notably, base G demonstrates high sensitivity on both substrates. The obtained current-voltage (I-V) characteristics, both without and with base adsorption on MoS2 and the Se side of MoSSe, affirm excellent sensing performance. This research significantly advances our understanding of potential DNA sensing platforms and their electronic characteristics, thereby propelling the endeavor for personalized medicine through enhanced DNA sequencing technologies.

One-Dimensional MoS2 Nanoscrolls as Miniaturized Memories

Dimensionality of materials is closely related to their physical properties. For two-dimensional (2D) semiconductors such as monolayer molybdenum disulfide (MoS2), converting them from 2D nanosheets to one-dimensional (1D) nanoscrolls could contribute to remarkable electronic and optoelectronic properties, yet the rolling-up process still lacks sufficient controllability, which limits the development of their device applications. Herein we report a modified solvent evaporation-induced rolling process that halts at intermediate states and achieve MoS2 nanoscrolls with high yield and decent axial uniformity. The accordingly fabricated nanoscroll memories exhibit an on/off ratio of ∼104 and a retention time exceeding 103 s and can realize multilevel storage with pulsed gate voltages. Such open-end, high-curvature, and hollow 1D nanostructures provide new possibilities to manipulate the hysteresis windows and, consequently, the charge storage characteristics of nanoscale field-effect transistors, thereby holding great promise for the development of miniaturized memories.

Magneto-transport in the monolayer MoS2material system for high-performancefield-effect transistor applications

Electronic transport in monolayer MoS2is significantly constrained by several extrinsic factors despite showing good prospects as a transistor channel material. Our paper aims to unveil the underlying mechanisms of the electrical and magneto-transport in monolayer MoS2. In order to quantitatively interpret the magneto-transport behavior of monolayer MoS2on different substrate materials, identify the underlying bottlenecks, and provide guidelines for subsequent improvements, we present a deep analysis of the magneto-transport properties in the diffusive limit. Our calculations are performed on suspended monolayer MoS2and MoS2on different substrate materials taking into account remote impurity and the intrinsic and extrinsic phonon scattering mechanisms. We calculate the crucial transport parameters such as the Hall mobility, the conductivity tensor elements, the Hall factor, and the magnetoresistance over a wide range of temperatures, carrier concentrations, and magnetic fields. The Hall factor being a key quantity for calculating the carrier concentration and drift mobility, we show that for suspended monolayer MoS2at room temperature, the Hall factor value is around 1.43 for magnetic fields ranging from 0.001 to 1 Tesla, which deviates significantly from the usual value of unity. In contrast, the Hall factor for various substrates approaches the ideal value of unity and remains stable in response to the magnetic field and temperature. We also show that the MoS2over an Al2O3substrate is a good choice for the Hall effect detector. Moreover, the magnetoresistance increases with an increase in magnetic field strength for smaller magnetic fields before reaching saturation at higher magnetic fields. The presented theoretical model quantitatively captures the scaling of mobility and various magnetoresistance coefficients with temperature, carrier densities and magnetic fields.

In Situ Imaging of Two-Dimensional Crystal Growth Using a Heat-Resistant Optical Microscope

Revealing low-dimensional material growth dynamics is critical for crystal growth engineering. However, in a practical high-temperature growth system, the crystal growth process is a black box because of the lack of heat-resistant imaging tools. Here, we develop a heat-resistant optical microscope and embed it in a chemical vapor deposition (CVD) system to investigate two-dimensional (2D) crystal growth dynamics. This in situ optical imaging CVD system can tolerate temperatures of ≤900 °C with a spatial resolution of ∼1 μm. The growth of monolayer MoS2 crystals was studied as a model for 2D crystal growth. The nucleation and growth process have been imaged. Model analysis and simulation have revealed the growth rate, diffusion coefficient, and spatial distribution of the precursor. More importantly, a new vertex-kink-ledge model has been suggested for monolayer crystal growth. This work provides a new technique for in situ microscopic imaging at high temperatures and fundamental insight into 2D crystal growth.

In Operando Study of Charge Modulation in MoS2 Transistors by Excitonic Reflection Microscopy

Monolayers of transition metal dichalcogenides (2D TMDs) experience strong modulation of their optical properties when the charge density is varied. Indeed, the transition from carriers composed mostly of excitons at low electron density to a situation in which trions dominate at high density is accompanied by a significant evolution of both the refractive index and the extinction coefficient. Using optical interference reflection microscopy at the excitonic wavelength, this (n, κ)-q relationship can be exploited to directly image the electron density in operating TMD devices. In this work, we show how this technique, which we call XRM (excitonic reflection microscopy), can be used to study charge distribution in MoS2 field-effect transistors with subsecond throughput, in wide-field mode. Complete maps of the charge distribution in the transistor channel at any drain and gate bias polarization point (VDS, VGS) are obtained, at ∼3 orders of magnitude faster than with scanning probe techniques such as KPFM. We notably show how the advantages of XRM enable real-time mapping of bias-dependent charge inhomogeneities, the study of resistive delays in 2D polycrystalline networks, and the evaluation of the VDS vs VGS competition to control the charge distribution in active devices.

A Dual-Channel MoS2-Based Selective Gas Sensor for Volatile Organic Compounds

Significant progress has been made in two-dimensional material-based sensing devices over the past decade. Organic vapor sensors, particularly those using graphene and transition metal dichalcogenides as key components, have demonstrated excellent sensitivity. These sensors are highly active because all the atoms in the ultra-thin layers are exposed to volatile compounds. However, their selectivity needs improvement. We propose a novel gas-sensing device that addresses this challenge. It consists of two side-by-side sensors fabricated from the same active material, few-layer molybdenum disulfide (MoS₂), for detecting volatile organic compounds like alcohol, acetone, and toluene. To create a dual-channel sensor, we introduce a simple step into the conventional 2D material sensor fabrication process. This step involves treating one-half of the few-layer MoS₂ using ultraviolet-ozone (UV-O3) treatment. The responses of pristine few-layer MoS₂ sensors to 3000 ppm of ethanol, acetone, and toluene gases are 18%, 3.5%, and 49%, respectively. The UV-O3-treated few-layer MoS₂-based sensors show responses of 13.4%, 3.1%, and 6.7%, respectively. This dual-channel sensing device demonstrates a 7-fold improvement in selectivity for toluene gas against ethanol and acetone. Our work sheds light on understanding surface processes and interaction mechanisms at the interface between transition metal dichalcogenides and volatile organic compounds, leading to enhanced sensitivity and selectivity.

Flexible High-Temperature MoS2 Field-Effect Transistors and Logic Gates

High-temperature-resistant integrated circuits with excellent flexibility, a high integration level (nanoscale transistors), and low power consumption are highly desired in many fields, including aerospace. Compared with conventional SiC high-temperature transistors, transistors based on two-dimensional (2D) MoS2 have advantages of superb flexibility, atomic scale, and ultralow power consumption. However, MoS2 cannot survive at high temperature and drastically degrades above 200 °C. Here, we report MoS2 field-effect transistors (FETs) with top/bottom hexagonal boron nitride (h-BN) encapsulation and graphene electrodes. With the protection of the h-BN/h-BN structure, the devices can survive at much higher temperature (≥500 °C in air) than those of the MoS2 devices ever reported, which provides us an opportunity to explore the electrical properties and working mechanism of MoS2 devices at high temperature. Unlike the relatively low-temperature situation, the on/off ratio and subthreshold swing of MoS2 FETs show drastic variation at elevated temperature due to the injection of thermal emission carriers. Compared with metal electrode, devices with a graphene electrode demonstrate superior performance at high temperature (∼1-order-larger current on/off ratio, 3-7 times smaller subthreshold swing, and 5-9 times smaller threshold voltage shift). We further realize that the flexible CMOS NOT gate based on the above technique, and demonstrate logic computing at 550 °C. This work may stimulate the fundamental research of properties of 2D materials at high temperature, and also creates conditions for next-generation flexible harsh-environment-resistant integrated circuits.

Re-Designing Cellulosic Core-Shell Composite Fibers for Advanced Photothermal and Thermal-Regulating Performance

Flexible fibers and textiles featuring photothermal conversion and storage capacities are ideal platforms for solar-energy utilization and wearable thermal management. Other than using fossil-fuel-based synthetic fibers, re-designing natural fibers with nanotechnology is a sustainable but challenging option. Herein, advanced core-shell structure fibers based on plant-based nanocelluloses are obtained using a facile co-axial wet-spinning process, which has superior photothermal and thermal-regulating performances. Besides serving as the continuous matrix, nanocelluloses also have two other important roles: dispersing agent when exfoliating molybdenum disulfide (MoS2), and stabilizer for phase change materials (PCM) in the form of Pickering emulsion. Consequently, the shell layer contains well-oriented nanocelluloses and MoS2, and the core layer contains a high content of PCM in a leak-proof encapsulated manner. Such a hierarchical cellulosic supportive structure leads to high mechanical strength (139 MPa), favorable flexibility, and large latent heat (92.0 J g-1), surpassing most previous studies. Furthermore, the corresponding woven cloth demonstrates satisfactory thermal-regulating performance, high solar-thermal conversion and storage efficiency (78.4-84.3%), and excellent long-term performance. In all, this work paves a new way to build advanced structures by assembling nanoparticles and polymers for functional composite fibers in advanced solar-energy-related applications.

Resonant Raman Scattering Study of Strain and Defects in Chemical Vapor Deposition Grown MoS2 Monolayers

The development of bottom-up synthesis routes for semiconducting transition metal dichalcogenides (TMDs) and the assessment of their defects are of paramount importance to achieve their applications. TMD monolayers grown by chemical vapor deposition (CVD) can be subjected to significant strain and, here, Raman and photoluminescence spectroscopies are combined to characterize strain in over one hundred MoS2 monolayer samples grown by CVD. The frequency changes of phonons as a function of strain are analyzed, and used to extract the Grüneisen parameter of both zone-center and edge phonons. Additionally, the intensity of the defect-induced longitudinal acoustic (LA) and transverse acoustic (TA) Raman bands are discussed in relation to strain and electronic doping. The experimental mode-Grüneisen parameters obtained are compared with those calculated by density functional theory (DFT), to better characterize the type of strain and its resulting effects on Grüneisen parameters. The findings indicate that the use of Raman spectra to determine defect densities in 2D MoS2 must be always conducted considering strain effects. To the best of the authors' knowledge, this work constitutes the first report on double resonance Raman processes studied as a function of strain in 2D-MoS2. The new approach to obtain the Grüneisen parameter from zone-edge phonons in MoS2 can also be extended to other 2D semiconducting TMDs.

Trifluoromethylation of 2D Transition Metal Dichalcogenides: A Mild Functionalization and Tunable p-Type Doping Method

Chemical modification is a powerful strategy for tuning the electronic properties of 2D semiconductors. Here we report the electrophilic trifluoromethylation of 2D WSe2 and MoS2 under mild conditions using the reagent trifluoromethyl thianthrenium triflate (TTT). Chemical characterization and density functional theory calculations reveal that the trifluoromethyl groups bind covalently to surface chalcogen atoms as well as oxygen substitution sites. Trifluoromethylation induces p-type doping in the underlying 2D material, enabling the modulation of charge transport and optical emission properties in WSe2. This work introduces a versatile and efficient method for tailoring the optical and electronic properties of 2D transition metal dichalcogenides.

Strain-Enhanced Large-Area Monolayer MoS2 Photodetectors

In this study, we show a direct correlation between the applied mechanical strain and an increase in monolayer MoS2 photoresponsivity. This shows that tensile strain can improve the efficiency of monolayer MoS2 photodetectors. The observed high photocurrent and extended response time in our devices are indicative that devices are predominantly governed by photogating mechanisms, which become more prominent with applied tensile strain. Furthermore, we have demonstrated that a nonencapsulated MoS2 monolayer can be used in strain-based devices for many cycles and extensive periods of time, showing endurance under ambient conditions without loss of functionality. Such robustness emphasizes the potential of MoS2 for further functionalization and utilization of different flexible sensors.

Electrospun MoS2-CNTs-PVA/PVA Hybrid Separator for High-Performance Li/FeS2 Batteries

As a promising candidate for high-energy-density rechargeable lithium metal batteries, Li/FeS2 batteries still suffer from the large volume change and severe shuttle effect of lithium polysulfides during cycling. To improve the electrochemical performance, great efforts have been made to modify FeS2 cathodes by constructing various nanocomposites. However, energy density is sacrificed, and these materials are not applicable at a large scale. Herein, we report that the electrochemical performance of commercial FeS2 can be greatly enhanced with the application of a double-layer MoS2-CNTs-PVA (MCP)/PVA separator fabricated by electrospinning. The assembled Li/FeS2 batteries can still deliver a high discharge capacity of 400 mAh/g after 200 cycles at a current density of 0.5 C. The improved cycling stability can be attributed to the strong affinity towards lithium polysulfides (LiPSs) of the hydroxyl-rich PVA matrix and the unique double-layer structure, in which the bottom layer acts as an electrical insulation layer and the top layer coupled with MoS2/CNTs provides catalytic sites for LiPS conversion.

Extremely Enhanced Photoluminescence in MoS2-Derived Quantum Sheets

Molybdenum disulfide (MoS2) quantum sheets (QSs) are attractive for applications due to their tunable energy band structures and optical and electronic properties. The photoluminescence quantum yield (PLQY) of MoS2 QSs achieved by mechanical and liquid exfoliation and chemical vapor deposition is low. Some studies have reported that chemical treatment and elemental doping can improve the PLQY of transition metal dichalcogenides (TMDs), but this is limited by complex instruments and reactions. In this study, a heat treatment method based on a polar solvent is reported to improve the PLQY and photoluminescence (PL) intensity of MoS2 QSs at room temperature. The absolute PLQY of treated MoS2 QSs is increased to 18.5%, and the PL intensity is increased by a factor of 64. This method is also effective for tungsten disulfide (WS2) QSs. The PL enhancement of QSs is attributed to oxidation of the edges. Such passivation/deformation of MoS2 QSs facilitates the radiative route rather than the nonradiative route, resulting in extreme enhancement of the PL. Our work could provide novel insights/routes toward the PL enhancement of TMD QSs.

Unraveling the "Gap-Filling" Mechanism of Multiple Charge Carriers in Aqueous Zn-MoS2 Batteries

The utilization rate of active sites in cathode materials for Zn-based batteries is a key factor determining the reversible capacities. However, a long-neglected issue of the strong electrostatic repulsions among divalent Zn2+ in hosts inevitably causes the squander of some active sites (i.e., gap sites). Herein, we address this conundrum by unraveling the "gap-filling" mechanism of multiple charge carriers in aqueous Zn-MoS2 batteries. The tailored MoS2 /(reduced graphene quantum dots) hybrid features an ultra-large interlayer spacing (2.34 nm), superior electrical conductivity/hydrophilicity, and robust layered structure, demonstrating highly reversible NH4 + /Zn2+ /H+ co-insertion/extraction chemistry in the 1 M ZnSO4 +0.5 M (NH4 )2 SO4 aqueous electrolyte. The NH4 + and H+ ions can act as gap fillers to fully utilize the active sites and screen electrostatic interactions to accelerate the Zn2+ diffusion. Thus, unprecedentedly high rate capability (439.5 and 104.3 mAh g-1 at 0.1 and 30 A g-1 , respectively) and ultra-long cycling life (8000 cycles) are achieved.

Submicron Memtransistors Made from Monocrystalline Molybdenum Disulfide

Multiterminal memtransistors made from two-dimensional (2D) materials have garnered increasing attention in the pursuit of low-power heterosynaptic neuromorphic circuits. However, existing 2D memtransistors tend to necessitate high set voltages (>1 V) or feature defective channels, posing concerns regarding material integrity and intrinsic properties. Herein, we present a monocrystalline monolayer MoS2 memtransistor designed for operation within submicron regimes. Under reverse drain bias sweeps, our experiments reveal memristive behavior within the device, further controllable through modulation of the gate terminal. This controllability facilitates the consistent manifestation of multistate memory effects. Notably, the memtransistor behavior becomes more significant as the channel length diminishes, particularly with channel lengths below 1.6 μm, showcasing an increase in the switching ratio alongside a decrease in the set voltage with the decreasing channel length. Our optimized memtransistor demonstrates the ability to exhibit individual resistance states spanning 5 orders of magnitude, with switching drain voltages of approximately 0.05 V. To elucidate these findings, we investigate hot carrier effects and their interplay with oxide traps within the HfO2 dielectric. This work highlights the importance of memtransisor behavior in highly scaled 2D transistors, particularly those featuring low contact resistances. This understanding holds the potential to tailor memory characteristics essential for the development of energy-efficient neuromorphic devices.

Tuning Local Atomic Structures in MoS2 Based Catalysts for Electrochemical Nitrate Reduction

In recent years, there has been a substantial surge in the investigation of transition-metal dichalcogenides such as MoS2 as a promising electrochemical catalyst. Inspired by denitrification enzymes such as nitrate reductase and nitrite reductase, the electrochemical nitrate reduction catalyzed by MoS2 with varying local atomic structures is reported. It is demonstrated that the hydrothermally synthesized MoS2 containing sulfur vacancies behaves as promising catalysts for electrochemical denitrification. With copper doping at less than 9% atomic ratio, the selectivity of denitrification to dinitrogen in the products can be effectively improved. X-ray absorption characterizations suggest that two sulfur vacancies are associated with one copper dopant in the MoS2 skeleton. DFT calculation confirms that copper dopants replace three adjacent Mo atoms to form a trigonal defect-enriched region, introducing an exposed Mo reaction center that coordinates with Cu atom to increase N2 selectivity. Apart from the higher activity and selectivity, the Cu-doped MoS2 also demonstrates remarkably improved tolerance toward oxygen poisoning at high oxygen concentration. Finally, Cu-doped MoS2 based catalysts exhibit very low specific energy consumption during the electrochemical denitrification process, paving the way for potential scale-up operations.

Pseudocapacitance-Induced Synaptic Plasticity of Tribo-Phototronic Effect Between Ionic Liquid and 2D MoS2

Contact-induced electrification, commonly referred to as triboelectrification, is the subject of extensive investigation at liquid-solid interfaces due to its wide range of applications in electrochemistry, energy harvesting, and sensors. This study examines the triboelectric between an ionic liquid and 2D MoS2 under light illumination. Notably, when a liquid droplet slides across the MoS2 surface, an increase in the generated current and voltage is observed in the forward direction, while a decrease is observed in the reverse direction. This suggests a memory-like tribo-phototronic effect between ionic liquid and 2D MoS2 . The underlying mechanism behind this tribo-phototronic synaptic plasticity is proposed to be ion adsorption/desorption processes resulting from pseudocapacitive deionization/ionization at the liquid-MoS2  interface. This explanation is supported by the equivalent electrical circuit modeling, contact angle measurements, and electronic band diagrams. Furthermore, the influence of various factors such as velocity, step size, light wavelength and intensity, ion concentration, and bias voltage is thoroughly investigated. The artificial synaptic plasticity arising from this phenomenon exhibits significant synaptic features, including potentiation/inhibition, paired-pulse facilitation/depression, and short-term memory (STM) to long-term memory (LTM) transition. This research opens up promising avenues for the development of synaptic memory systems and intelligent sensing applications based on liquid-solid interfaces.

Realization of low potential barrier in MoS2/rGO heterojunction with enhanced electrical conductivity for thin film thermoelectric applications

Two-dimensional (2D) van der Waals materials in-plane anisotropy, caused by a low-symmetric lattice structure, has considerably increased their applications, particularly in thermoelectric. MoS2and MoS2/reduced graphene oxide (rGO) thin films were grown on SiO2/Si substrate by atmospheric chemical vapor deposition technique to study the thermoelectric performance. Few layered MoS2was confirmed by the vibrational analysis and the composition elements are confirmed by the x-ray photoelectron spectroscopy technique. The continuous grains lead to reduced phonon life time in A1gand low activation energy assists to enhance the electrical property. The MoS2/rGO has achieved the highestσof 22 622 S m-1at 315 K due to an electron-rich cloud around the electrons in S atoms near the adjacent layer of rGO.

Formulation of Hierarchical Nanowire-Structured CoNiO2 and MoS2/CoNiO2 Hybrid Composite Electrodes for Supercapacitor Applications

Hierarchical porous nanowire-like MoS2/CoNiO2 nanohybrids were synthesized via the hydrothermal process. CoNiO2 nanowires were selected due to the edge site, high surface/volume ratio, and superior electrochemical characteristics as the porous backbone for decoration of layered MoS2 nanoflakes to construct innovative structure hierarchical three-dimensional (3D) porous NWs MoS2/CoNiO2 hybrids with excellent charge accumulation and efficient ion transport capabilities. Physicochemical analyses were conducted on the developed hybrid composite, revealing conclusive evidence that the CoNiO2 nanowires have been securely anchored onto the surface of the MoS2 nanoflake array. The electrochemical results strongly proved the benefit of the hierarchical 3D porous MoS2/CoNiO2 hybrid structure for the charge storage kinetics. The synergistic characteristics arising from the MoS2/CoNiO2 composite yielded a notably high specific capacitance of 1340 F/g at a current density of 0.5 A/g. Furthermore, the material exhibited sustained cycling stability, retaining 95.6% of its initial capacitance after 10 000 long cycles. The asymmetric device comprising porous MoS2/CoNiO2//activated carbon encompassed outstanding energy density (93.02 Wh/kg at 0.85 kW/kg) and cycling stability (94.1% capacitance retention after 10 000 cycles). Additionally, the successful illumination of light-emitting diodes underscores the significant potential of the synthesized MoS2/CoNiO2 (2D/1D) hybrid for practical high-energy storage applications.

Constructing the Interconnected Charge Transfer Pathways in Sulfur Composite Cathode for All-Solid-State Lithium-Sulfur Batteries

All-solid-state lithium-sulfur batteries (ASSLSBs) have advantageous features, such as high energy, low costs, enhanced safety, and no polysulfide dissolution. However, the use of sulfur as an active material in all-solid-state batteries is difficult because of its ionic and electrical insulating properties. Herein, we introduce a flower-shaped composite material consisting of MoS2 nanoparticles and sulfur, designed to establish interconnected ionic and electrical conduction pathways at the cathode. As a host material, MoS2 nanoparticles with a large specific surface area can coconduct Li ions and electrons, possessing the potential for effectively utilizing sulfur. However, MoS2 nanoparticles are prone to physical-electrochemical isolation by being surrounded by sulfur due to their crumpling property in the process of mixing and impregnation with sulfur. This problem is addressed by mildly milling the MoS2 nanoparticles and sulfur, after which melt diffusion is applied to generate uniform MoS2/sulfur composite materials to establish an interconnected conducting pathway within the composite. A sulfide solid electrolyte (Li6PS5Cl)-based ASSLSB incorporating the proposed MoS2/sulfur composite demonstrates a stable operation over 1000 cycles with a Coulombic efficiency of nearly 100%. This study emphasizes the significance of the structural design of the sulfur composite material on top of the intrinsic properties of the material for high-performance ASSLSBs.

Effective green treatment of sewage sludge from Fenton reactions: Utilizing MoS2 for sustainable resource recovery

Effectively managing sewage sludge from Fenton reactions in an eco-friendly way is vital for Fenton technology's viability in pollution treatment. This study focuses on sewage sludge across various treatment stages, including generation, concentration, dehydration, and landfill, and employs chemical composite MoS2 to facilitate green resource utilization of all types of sludge. MoS2, with exposed Mo4+ and low-coordination sulfur, enhances iron cycling and creates an acidic microenvironment on the sludge surface. The MoS2-modified iron sludge exhibits outstanding (>95%) phenol and pollutant degradation in hydrogen peroxide and peroxymonosulfate-based Fenton systems, unlike unmodified sludge. This modified sludge maintains excellent Fenton activity in various water conditions and with multiple anions, allowing extended phenol degradation for over 14 d. Notably, the generated chemical oxygen demand (COD) in sludge modification process can be efficiently eliminated through the Fenton reaction, ensuring effluent COD compliance and enabling eco-friendly sewage sludge resource utilization.

Molecular Connectors Boosting the Performance of MoS2 Cathodes in Zinc-Ion Batteries

Zinc-ion batteries (ZIBs) are promising energy storage systems due to high energy density, low-cost, and abundant availability of zinc as a raw material. However, the greatest challenge in ZIBs research is lack of suitable cathode materials that can reversibly intercalate Zn2+ ions. 2D layered materials, especially MoS2 -based, attract tremendous interest due to large surface area and ability to intercalate/deintercalate ions. Unfortunately, pristine MoS2 obtained by traditional protocols such as chemical exfoliation or hydrothermal/solvothermal methods exhibits limited electronic conductivity and poor chemical stability upon charge/discharge cycling. Here, a novel molecular strategy to boost the electrochemical performance of MoS2 cathode materials for aqueous ZIBs is reported. The use of dithiolated conjugated molecular pillars, that is, 4,4'-biphenyldithiols, enables to heal defects and crosslink the MoS2 nanosheets, yielding covalently bridged networks (MoS2 -SH2) with improved ionic and electronic conductivity and electrochemical performance. In particular, MoS2 -SH2 electrodes display high specific capacity of 271.3 mAh g-1 at 0.1 A g-1 , high energy density of 279 Wh kg-1 , and high power density of 12.3 kW kg-1 . With its outstanding rate capability (capacity of 148.1 mAh g-1 at 10 A g-1 ) and stability (capacity of 179 mAh g-1 after 1000 cycles), MoS2 -SH2 electrodes outperform other MoS2 -based electrodes in ZIBs.

In Situ Molecular Engineering Strategy to Construct Hierarchical MoS2 Double-Layer Nanotubes for Ultralong Lifespan "Rocking-Chair" Aqueous Zinc-Ion Batteries

Rechargeable aqueous zinc ion batteries (AZIBs) have gained considerable attention owing to their low cost and high safety, but dendrite growth, low plating/stripping efficiency, surface passivation, and self-erosion of the Zn metal anode are hindering their application. Herein, a one-step in situ molecular engineering strategy for the simultaneous construction of hierarchical MoS2 double-layer nanotubes (MoS2-DLTs) with expanded layer-spacing, oxygen doping, structural defects, and an abundant 1T-phase is proposed, which are designed as an intercalation-type anode for "rocking-chair" AZIBs, avoiding the Zn anode issues and therefore displaying a long cycling life. Benefiting from the structural optimization and molecular engineering, the Zn2+ diffusion efficiency and interface reaction kinetics of MoS2-DLTs are enhanced. When coupled with a homemade ZnMn2O4 cathode, the assembled MoS2-DLTs//ZnMn2O4 full battery exhibited impressive cycling stability with a capacity retention of 86.6% over 10 000 cycles under 1 A g-1anode, outperforming most of the reported "rocking-chair" AZIBs. The Zn2+/H+ cointercalation mechanism of MoS2-DLTs is investigated by synchrotron in situ powder X-ray diffraction and multiple ex situ characterizations. This research demonstrates the feasibility of MoS2 for Zn-storage anodes that can be used to construct reliable aqueous full batteries.

High-performance MoS2phototransistors with Hf1-xAlxO back-gate dielectric layer grown by plasma enhanced atomic layer deposition

Molybdenum sulfide (MoS2) as an emerging optoelectronic material, shows great potential for phototransistors owing to its atomic thickness, adjustable band gap, and low cost. However, the phototransistors based on MoS2have been shown to have some issues such as large gate leakage current, and interfacial scattering, resulting in suboptimal optoelectronic performance. Thus, Al-doped hafnium oxide (Hf1-xAlx) is proposed to be a dielectric layer of the MoS2-based phototransistor to solve this problem because of the relatively higher crystallization temperature and dielectric constant. Here, a high-performance MoS2phototransistor with Hf1-xAlxO gate dielectric layer grown by plasma-enhanced atomic layer deposition has been fabricated and studied. The results show that the phototransistor exhibits a high responsivity of 2.2 × 104A W-1, a large detectivity of 1.7 × 1017Jones, a great photo-to-dark current ratio of 2.2 × 106%, and a high external quantum efficiency of 4.4 × 106%. The energy band alignment and operating mechanism were further used to clarify the reason for the enhanced MoS2phototransistor. The suggested MoS2phototransistors could provide promising strategies in further optoelectronic applications.

Symmetry Breaking and Spin-Orbit Coupling for Individual Vacancy-Induced In-Gap States in MoS2 Monolayers

Spins confined to point defects in atomically thin semiconductors constitute well-defined atomic-scale quantum systems that are being explored as single-photon emitters and spin qubits. Here, we investigate the in-gap electronic structure of individual sulfur vacancies in molybdenum disulfide (MoS2) monolayers using resonant tunneling scanning probe spectroscopy in the Coulomb blockade regime. Spectroscopic mapping of defect wave functions reveals an interplay of local symmetry breaking by a charge-state-dependent Jahn-Teller lattice distortion that, when combined with strong (≃100 meV) spin-orbit coupling, leads to a locking of an unpaired spin-1/2 magnetic moment to the lattice at low temperature, susceptible to lattice strain. Our results provide new insights into the spin and electronic structure of vacancy-induced in-gap states toward their application as electrically and optically addressable quantum systems.

Enhanced NO2 Sensitivity of Vertically Stacked van der Waals Heterostructure Gas Sensor and Its Remarkable Electric and Mechanical Tunability

Nanodevices based on van der Waals heterostructures have been predicted, and shown, to have unprecedented operational principles and functionalities that hold promise for highly sensitive and selective gas sensors with rapid response times and minimal power consumption. In this study, we fabricated gas sensors based on vertical MoS2/WS2 van der Waals heterostructures and investigated their gas sensing capabilities. Compared with individual MoS2 or WS2 gas sensors, the MoS2/WS2 van der Waals heterostructure gas sensors are shown to have enhanced sensitivity, faster response times, rapid recovery, and a notable selectivity, especially toward NO2. In combination with a theoretical model, we show that it is important to take into account created trapped states (flat bands) induced by the adsorption of gas molecules, which capture charges and alter the inherent built-in potential of van der Waals heterostructure gas sensors. Additionally, we note that the performance of these MoS2/WS2 heterostructure gas sensors could be further enhanced using electrical gating and mechanical strain. Our findings highlight the importance of understanding the effects of altered built-in potentials arising from gas molecule adsorption induced flat bands, thus offering a way to enhance the gas sensing performance of van der Waals heterostructure gas sensors.

Unveiling the Radiative Electron-Hole Recombination of MoS2 Nanostructures at Extreme pH Conditions

Nanostructures of MoS2 are in wide research for optoelectronic, energy and biological applications. Opto-electronic and biological applications requires the tuning of photoluminescence properties of MoS2 nanostructures. In this article, nanosized MoS2 is hydrothermally synthesized, and photoluminescence at extreme pH conditions (pH 1 and 13) is examined. As the photoluminescence gives a key to probe the radiative electron-hole recombination, here, photoluminescence emissions are used as an indicator to suggest the pattern of electron-hole recombination in the material at extreme pH conditions. Raman spectroscopy, dynamic light scattering, Scanning electron microscopic image and energy dispersive x-ray analysis are done for material confirmation. At pH 1 and 13 as-synthesized nanostructured MoS2 exhibited both upconversion and downconversion photoluminescence. The intensity of photoluminescence is varied with respect to pH. Excitation-dependent photoluminescence mechanisms and preliminary understanding on the ratio of quantum yields and life span of excited state of as-synthesized nanostructured MoS2 are unveiled here.

MoS2 nanoflower decorated bio-derived chitosan nanocomposites for sustainable energy storage: Structural, optical and electrochemical studies

Bio-derived chitosan-molybdenum di sulfide (Cs-MoS2) nanocomposites are prepared by a simple and economical aqueous casting method with varying concentrations of MoS2. The structural, surface morphological, optical, and electrochemical properties of the nanocomposites were studied. FTIR analysis reveals the strong interaction between Cs and MoS2. FESEM micrograph showed an increment of the surface roughness due to the incorporation of MoS2 layers into Cs. The surface wettability of the nanocomposites was found to be decreased from 73° to 33° due to the incorporation of MoS2 into the chitosan. UV-vis spectroscopy study demonstrates a reduction of optical bandgap from 4.29 to 3.44 eV as the nanofiller, MoS2, introduces localized states within the forbidden energy bandgap. The incorporation of MoS2 was found to increase the specific capacitance of Cs from 421 mFg-1 to 1589 mFg-1 at a current density of 100 μAg-1. The EIS analysis revealed an increase in the pseudo-capacitance from 0.09 μF to 4.13 μF and a reduction of charge transfer resistance that comes from the nanofiller contribution. MoS2 nanoflower introduces more active sites and expands the electroactive zone, thus improving the charge storage property of Cs. The Cs-MoS2 may offer a new route for the synthesis of eco-friendly, biodegradable, and electrical storage devices.

Tribological Properties of a Sliding Joint with an a-C:H:W Coating under Lubrication Conditions with PAO8 Oil and the Addition of 2% MoS2 Nanoparticles

One of the promising methods for improving the durability and reliability of friction joints in combustion engines is the use of thin and hard coatings, including coatings based on amorphous DLC. The a-C:H:W coating was produced using the commercial PVD method. The tested tribological joints were made of AISI 4337 steel and SAE-48 bearing alloy (conformal contact) and AISI 4337 steel and valve shims (non-conformal contact). The contact area was lubricated with SAE 5W40 engine oil and PAO8 oil + 2 wt.% MoS2 nanoparticles. The objective of this work is to explore the influence of PAO8 + MoS2 on the tribological properties of a sliding joint with an a-C:H:W coating and the change in the properties of the oils. In the conformal contact, the lubrication of the a-C:H:W coating with PAO8 + MoS2 caused a significant increase in the friction resistance (than in) as compared to the joints with a quenching and tempering surface layer and lubricated SAE 5W40, while in the non-conformal contact, the lubrication of the a-C:H:W coating with PAO8 + MoS2 caused a decrease in the friction resistance and temperature of the contact area. The joints with the a-C:H:W coating were characterized by higher wear of the SAE-48 bearing alloy, as compared to the joints with the surface layer without coating (lubricated with SAE 5W40 oil-11-fold increase, PAO8 + MoS2-46-fold increase). The wear of valve shims with the a-C:H:W coating was significantly lower as compared to the wear of the commercial version of the valve shims (the difference between joints lubricated with SAE 5W40 oil and PAO8 + MoS2 was 12%, 36% and 29% for unit pressures of 10, 15 and 20 MPa). Lubrication of the a-C:H:W coating with PAO8 oil + MoS2 protected the sliding joints against seizing in non-conformal contact.

Selective CW Laser Synthesis of MoS2 and Mixture of MoS2 and MoO2 from (NH4)2MoS4 Film

Very recently, the synthesis of 2D MoS2 and WS2 through pulsed laser-directed thermolysis can achieve wafer-scale and large-area structures, in ambient conditions. In this paper, we report the synthesis of MoS2 and MoS2 oxides from (NH4)2MoS4 film using a visible continuous-wave (CW) laser at 532 nm, instead of the infrared pulsed laser for the laser-directed thermolysis. The (NH4)2MoS4 film is prepared by dissolving its crystal powder in DI water, sonicating the solution, and dip-coating onto a glass slide. We observed a laser intensity threshold for the laser synthesis of MoS2, however, it occurred in a narrow laser intensity range. Above that range, a mixture of MoS2 and MoO2 is formed, which can be used for a memristor device, as demonstrated by other research groups. We did not observe a mixture of MoS2 and MoO3 in the laser thermolysis of (NH4)2MoS4. The laser synthesis of MoS2 in a line pattern is also achieved through laser scanning. Due to of the ease of CW beam steering and the fine control of laser intensities, this study can lead toward the CW laser-directed thermolysis of (NH4)2MoS4 film for the fast, non-vacuum, patternable, and wafer-scale synthesis of 2D MoS2.

Strong Room-Temperature Ferromagnetism of MoS2 Compound Produced by Defect Generation

Ferromagnetic materials have been attracting great interest in the last two decades due to their application in spintronics devices. One of the hot research areas in magnetism is currently the two-dimensional materials, transition metal dichalcogenides (TMDCs), which have unique physical properties. The origins and mechanisms of transition metal dichalcogenides (TMDCs), especially the correlation between magnetism and defects, have been studied recently. We investigate the changes in magnetic properties with a variation in annealing temperature for the nanoscale compound MoS2. The pristine MoS2 exhibits diamagnetic properties from low-to-room temperature. However, MoS2 compounds annealed at different temperatures showed that the controllable magnetism and the strongest ferromagnetic results were obtained for the 700 °C-annealed sample. These magnetizations are attributed to the unpaired electrons of vacancy defects that are induced by annealing, which are confirmed using Raman spectroscopy and electron paramagnetic resonance spectroscopy (EPR).

First principle study of the effect of doping on the optoelectronic properties of Cr-adsorbed MoS2

CONTEXT

This study explores, for the first time, using first principles, the impact of substitutional doping with boron (B), carbon (C), and nitrogen (N) on the adsorption of chromium (Cr) on monolayer MoS2. The effects of doping on the Cr adsorption behavior of MoS2 were investigated using four MoS2 systems, namely, pure, boron (B)-doped, carbon (C)-doped, and nitrogen (N)-doped, in order to gain an in-depth understanding of the mechanism of the effects of doping on the electronic structure and optical properties of Cr adsorbed by MoS2, to optimize the properties of MoS2, to explore new areas of application, and to promote the development of materials science. Four MoS2 adsorption systems of Cr adsorption on pure, B-doped, C-doped, and N-doped MoS2 were optimized, and the optimized results showed that the stable adsorption location of Cr on both pure and doped MoS2 was the hollow location at the top of the folded hexagon. The findings reveal that pure MoS2 has an adsorption effect on Cr, and doped elements B, C, and N can promote the adsorption of Cr on MoS2, and the strong and weak order of this promotion is B > C > N.

METHODS

In this paper, we use the CASTEP module in the simulation software Materials Studio to perform simulation calculations and analyses to optimize the simulation of Cr adsorption by MoS2 doped with B, C, and N atoms using the generalized gradient approximation (GGA) plane-wave pseudo-potential method (Perdew et al. Phys Rev Lett 77(18):3865-3968, 1996), as well as Perdew-Burke-Ernzerhof (PBE) generalized functionals (Segall et al. J Phys: Condens Matter 14(11):2717-2744, 2022). The convergence test reveals that it is more reasonable to set the K-point network to 3 × 3 × 1 and the truncation energy to 400 eV. In this paper, a 3 × 3 × 1 supercell structure with 18 S atoms and 9 Mo atoms is selected. The convergence value of the iteration accuracy is 1.0e - 5eV/atom, and all the atomic forces are less than 0.02eV/Å. Additionally, to prevent MoS2 interlayer interaction, a vacuum layer with a thickness of 18 Å is set in the C direction. The geometrical optimization of the model is performed first, and then the corresponding adsorption energies of the model and the nature of the electronic structure are analyzed.

Stable 1T-MoS2 by Facile Phase Transition Synthesis for Efficient Electrocatalytic Oxygen Evolution Reaction

The 1T phase of MoS2 exhibits much higher electrocatalytic activity and better stability than the 2H phase. However, the harsh conditions of 1T phase synthesis remain a significant challenge for various extensions and applications of MoS2 . In this work, a simple hydrothermal-based synthesis method for the phase transition of MoS2 is being developed. For this, the NH2 -MIL-125(Ti) (Ti MOF) is successfully utilized to induce the phase transition of MoS2 from 2H to 1T, achieving a high conversion ratio of ≈78.3%. The optimum phase-induced MoS2 /Ti MOF heterostructure demonstrates enhanced oxygen evolution reaction (OER) performance, showing an overpotential of 290 mV at a current density of 10 mA cm-2 . The density functional theory (DFT) calculations are demonstrating the benefits of this phase transition, determining the electronic properties and OER performance of MoS2 .

Towards large scale integration of MoS2/graphene heterostructure with ALD-grown MoS2

In the pursuit of ultrathin and highly sensitive photodetectors, a promising approach involves leveraging the combination of light-sensitive two-dimensional (2D) semiconducting transition-metal dichalcogenides, such as MoS2and the high electrical conductivity of graphene. Over the past decade, exfoliated 2D materials and electron-beam lithography have been used extensively to demonstrate feasibility on single devices. But for these devices to be used in the real-world systems, it is necessary to demonstrate good device performance similar to lab-based devices with repeatability of the results from device to device and a path to large scale manufacturing. To work in this way, a fabrication process of MoS2/graphene vertical heterostructures with a wafer-scale integration in a CMOS compatible foundry environment is evaluated here. Large-scale atomic layer deposition on 8 inch silicon wafers is used for the growth of MoS2layers which are then transferred on a 4 inch graphene-based wafer. The MoS2/graphene phototransistors are fabricated collectively, achieving a minimum channel length of 10μm. The results measured on dozen of devices demonstrate a photoresponsivity of 50 A W-1and a remarkable sensitivity as low as 10 nW at 660 nm. These results not only compete with lab-based photodetectors made of chemical vapor deposition grown MoS2layers transferred on graphene, but also pave the way for the large-scale integration of these emerging 2D heterostructures in optoelectronic devices and sensors.

Enhanced electron transfer for activation of peroxymonosulfate via MoS2 modified iron-based perovskite

The increasing use of fluoroquinolone antibiotics, which are found in various environmental media, is a constant threat to ecological safety and human health. In this paper, SrFeO3@MoS2 heterogeneous catalyst was prepared to activate peroxymonosulfate (PMS) for the degradation of levofloxacin (LVO). The characteristics of SrFeO3@MoS2 samples were studied and the optimum conditions for the removal of LVO by SrFeO3@MoS2/PMS system were investigated. The removal of LVO by the SrFeO3@MoS2-0.3/PMS system could reach 96.06% within 20 min of reaction. The effect of inorganic anions (SO42-, Cl-, NO3- and H2PO4-) commonly found in actual water bodies on catalytic reaction was explored. The reusability investigation revealed that the catalyst could still remove 88.06% of LVO within 20 min after four cycles. Moreover, SO4•-, •OH and 1O2 were identified by Electron Paramagnetic Resonance (EPR) tests and scavenger experiments, where the SO4•- and •OH were dominant reactive species. Combining with the XPS characterisation, the activation mechanism of SrFeO3@MoS2-0.3/PMS was proposed, and the oxygen vacancies and transition metals on the sample surface were active sites of PMS activation. Furthermore, the possible degradation pathways of LVO were well-established based on the detected intermediates.

Synthesis of Hierarchical CF@Fe3O4 Fibers Decorated with MoS2 Layers Forming Core-Sheath Microstructure toward Tunable and Efficient Electromagnetic Wave Absorption

Hierarchical structural design has been verified as a feasible strategy to fabricate effective electromagnetic wave (EMW) absorbers, so we designed hierarchical core-sheath composites with magnetic particles and dielectric layers. In this work, a hierarchical structure of carbon fiber (CF)@Fe3O4@MoS2 (CPDF7-M) was prepared by introducing Fe3O4 and depositing MoS2 layers on the surface of fibers. Due to the synergistic effects from the CF@Fe3O4 increasing the conductive and magnetic loss and the outer MoS2 layers improving the impedance matching, the optimal reflection loss (RL) value was -63.1 dB at 2.7 mm and the effective absorption bandwidth (EAB) was 9.1 GHz covering the X and Ku band. Moreover, the EAB values were adjusted with a specific MoS2 loading at different thicknesses, which provided the necessary reference for the construction of efficient and flexible absorbers in the EMW absorption fields.

Imaging the Quantum Capacitance of Strained MoS2 Monolayers by Electrostatic Force Microscopy

We implemented radio frequency-assisted electrostatic force microscopy (RF-EFM) to investigate the electric field response of biaxially strained molybdenum disulfide (MoS2) monolayers (MLs) in the form of mesoscopic bubbles, produced via hydrogen (H)-ion irradiation of the bulk crystal. MoS2 ML, a semiconducting transition metal dichalcogenide, has recently attracted significant attention due to its promising optoelectronic properties, further tunable by strain. Here, we take advantage of the RF excitation to distinguish the intrinsic quantum capacitance of the strained ML from that due to atomic scale defects, presumably sulfur vacancies or H-passivated sulfur vacancies. In fact, at frequencies fRF larger than the inverse defect trapping time, the defect contribution to the total capacitance and to transport is negligible. Using RF-EFM at fRF = 300 MHz, we visualize simultaneously the bubble topography and its quantum capacitance. Our finite-frequency capacitance imaging technique is noninvasive and nanoscale and can contribute to the investigation of time- and spatial-dependent phenomena, such as the electron compressibility in quantum materials, which are difficult to measure by other methods.

Growth of Wide-Bandgap Monolayer Molybdenum Disulfide for a Highly Sensitive Micro-Displacement Sensor

Two-dimensional (2D) piezoelectric semiconductor materials are garnering significant attention in applications such as intelligent sensing and energy harvesting due to their exceptional physical and chemical properties. Among these, molybdenum disulfide (MoS2), a 2D wide-bandgap semiconductor, exhibits piezoelectricity in odd-layered structures due to the absence of an inversion symmetry center. In this study, we present a straightforward chemical vapor deposition (CVD) technique to synthesize monolayer MoS2 on a Si/SiO2 substrate, achieving a lateral size of approximately 50 µm. Second-harmonic generation (SHG) characterization confirms the non-centrosymmetric crystal structure of the wide-bandgap MoS2, indicative of its piezoelectric properties. We successfully transferred the triangular MoS2 to a polyethylene terephthalate (PET) flexible substrate using a wet-transfer method and developed a wide-bandgap MoS2-based micro-displacement sensor employing maskless lithography and hot evaporation techniques. Our testing revealed a piezoelectric response current of 5.12 nA in the sensor under a strain of 0.003% along the armchair direction of the monolayer MoS2. Furthermore, the sensor exhibited a near-linear relationship between the piezoelectric response current and the strain within a displacement range of 40-100 µm, with a calculated response sensitivity of 1.154 µA/%. This research introduces a novel micro-displacement sensor, offering potential for advanced surface texture sensing in various applications.

Electronic Modulation of MoS2 Nanosheets by N-Doping for Highly Sensitive NO2 Detection at Room Temperature

Transition metal dichalcogenide (TMD) materials hold great promise for gas sensors working at room temperature (RT). But the low response and slow dynamics derived from pristine TMDs remain a challenge toward their real applications. In this work, we report an efficient N-doping strategy to modulate the electronic structure of MoS2 nanosheets (N-MoS2) to achieve improved detection toward NO2. The effect of N-doping on the sensor properties, which has been rarely investigated, is elucidated by both experimental and computational studies. Due to N-doping, the Fermi level of N-MoS2 decreased from -5.29 to -5.33 eV and the band gap was reduced from 1.79 to 1.65 eV. The smaller band gap indicated the reduced resistance of N-MoS2 compared to that of original MoS2. As a result, the response of the MoS2 sensor to 10 ppm of NO2 was improved from 1.23 to 2.31 at RT. The sensor also has a limit of detection (LOD) of 62.5 ppb. To explain the effect of N-doping, density functional theory (DFT) calculations were conducted to figure out the important roles played by N-doping. This work demonstrates a pathway to modulate the chemical and electronic structures of TMD materials for advanced sensors.

Highly Sensitive Gas Sensor for Detection of Air Decomposition Pollutant (CO, NOx): Popular Metal Oxide (ZnO, TiO2)-Doped MoS2 Surface

When partial discharges occur in air-insulated equipment, the air decomposes to produce a variety of contamination products, resulting in a reduction in the insulation performance of the insulated equipment. By monitoring the concentration of typical decomposition products (CO, NO, and NO2) within the insulated equipment, potential insulation faults can be diagnosed. MoS2 has shown promising applications as a gas-sensitive semiconductor material, and doping metal oxides can improve the gas-sensitive properties of the material. Therefore, in this work, MoS2 has been doped using the popular metal oxides (ZnO, TiO2) of the day, and its gas-sensitive properties to the typical decomposition products of air have been analyzed and compared using density functional theory (DFT) calculations. The stability of the doped system was investigated using molecular dynamics methods. The related adsorption mechanism was analyzed by adsorption configuration, energy band structure, density of states (DOS) analysis, total electron density (TED) analysis, and differential charge density (DCD) analysis. Finally, the practical application of related sensing performance is evaluated. The results show that the doping of metal oxide nanoparticles greatly improves the conductivity, gas sensitivity, and adsorption selectivity of MoS2 monolayer to air decomposition products. The sensing response of ZnO-MoS2 for CO at room temperature (25 °C) reaches 161.86 with a good recovery time (0.046 s). TiO2-MoS2 sensing response to NO2 reaches 3.5 × 106 at 25 °C with a good recovery time (0.108 s). This study theoretically solves the industrial challenge of recycling sensing materials and provides theoretical value for the application of resistive chemical sensors in air-insulated equipment.

Tailored Synthesis of Heterogenous 2D TMDs and Their Spectroscopic Characterization

Two-dimensional (2D) vertical van der Waals heterostructures (vdWHs) show great potential across various applications. However, synthesizing large-scale structures poses challenges owing to the intricate growth parameters, forming unexpected hybrid film structures. Thus, precision in synthesis and thorough structural analysis are essential aspects. In this study, we successfully synthesized large-scale structured 2D transition metal dichalcogenides (TMDs) via chemical vapor deposition using metal oxide (WO3 and MoO3) thin films and a diluted H2S precursor, individual MoS2, WS2 films and various MoS2/WS2 hybrid films (Type I: MoxW1-xS2 alloy; Type II: MoS2/WS2 vdWH; Type III: MoS2 dots/WS2). Structural analyses, including optical microscopy, Raman spectroscopy, transmission electron microscopy (TEM) with energy-dispersive X-ray spectroscopy, and cross-sectional imaging revealed that the A1g and E2g modes of WS2 and MoS2 were sensitive to structural variations, enabling hybrid structure differentiation. Type II showed minimal changes in the MoS2's A1g mode, while Types I and III exhibited a ~2.8 cm-1 blue shift. Furthermore, the A1g mode of WS2 in Type I displayed a 1.4 cm-1 red shift. These variations agreed with the TEM-observed microstructural features, demonstrating strain effects on the MoS2-WS2 interfaces. Our study provides insights into the structural features of diverse hybrid TMD materials, facilitating their differentiation through Raman spectroscopy.

Hollow Carbon and MXene Dual-Reinforced MoS2 with Enlarged Interlayers for High-Rate and High-Capacity Sodium Storage Systems

Sodium-ion batteries (SIBs) and sodium-ion capacitors (SICs) are promising candidates for cost-effective and large-scale energy storage devices. However, sluggish kinetics and low capacity of traditional anode materials inhibit their practical applications. Herein, a novel design featuring a layer-expanded MoS2 is presented that dual-reinforced by hollow N, P-codoped carbon as the inner supporter and surface groups abundant MXene as the outer supporter, resulting in a cross-linked robust composite (NPC@MoS2 /MXene). The hollow N, P-codoped carbon effectively prevents agglomeration of MoS2 layers and facilitates shorter distances between the electrolyte and electrode. The conductive MXene outer surface envelops the NPC@MoS2 units inside, creating interconnected channels that enable efficient charge transfer and diffusion, ensuring rapid kinetics and enhanced electrode utilization. It exhibits a high reversible capacity of 453 mAh g-1 , remarkable cycling stability, and exceptional rate capability with 54% capacity retention when the current density increases from 100 to 5000 mA g-1 toward SIBs. The kinetic mechanism studies reveal that the NPC@MoS2 /MXene demonstrates a pseudocapacitance dominated hybrid sodiation/desodiation process. Coupled with active carbon (AC), the NPC@MoS2 /MXene//AC SICs achieve both high energy density of 136 Wh kg-1 at 254 W kg-1 and high-power density of 5940 W kg-1 at 27 Wh g-1 , maintaining excellent stability.

Nanocatalysis MoS2/rGO: An Efficient Electrocatalyst for the Hydrogen Evolution Reaction

In this study, a systematic investigation of MoS2 nanostructure growth on a SiO2 substrate was conducted using a two-stage process. Initially, a thin layer of Mo was grown through sputtering, followed by a sulfurization process employing the CVD technique. This two-stage process enables the control of diverse nanostructure formations of both MoS2 and MoO3 on SiO2 substrates, as well as the formation of bulk-like grain structures. Subsequently, the addition of reduced graphene oxide (rGO) was examined, resulting in MoS2/rGO(n), where graphene is uniformly deposited on the surface, exposing a higher number of active sites at the edges and consequently enhancing electroactivity in the HER. The influence of the synthesis time on the treated MoS2 and also MoS2/rGO(n) samples is evident in their excellent electrocatalytic performance with a low overpotential.

Direct Characterization of Buried Interfaces in 2D/3D Heterostructures Enabled by GeO2 Release Layer

Inconsistent interface control in devices based on two-dimensional materials (2DMs) has limited technological maturation. Astounding variability of 2D/three-dimensional (2D/3D) interface properties has been reported, which has been exacerbated by the lack of direct investigations of buried interfaces commonly found in devices. Herein, we demonstrate a new process that enables the assembly and isolation of device-relevant heterostructures for buried interface characterization. This is achieved by implementing a water-soluble substrate (GeO2), which enables deposition of many materials onto the 2DM and subsequent heterostructure release by dissolving the GeO2 substrate. Here, we utilize this novel approach to compare how the chemistry, doping, and strain in monolayer MoS2 heterostructures fabricated by direct deposition vary from those fabricated by transfer techniques to show how interface properties differ with the heterostructure fabrication method. Direct deposition of thick Ni and Ti films is found to react with the monolayer MoS2. These interface reactions convert 50% of MoS2 into intermetallic species, which greatly exceeds the 10% conversion reported previously and 0% observed in transfer-fabricated heterostructures. We also measure notable differences in MoS2 carrier concentration depending on the heterostructure fabrication method. Direct deposition of thick Au, Ni, and Al2O3 films onto MoS2 increases the hole concentration by >1012 cm-2 compared to heterostructures fabricated by transferring MoS2 onto these materials. Thus, we demonstrate a universal method to fabricate 2D/3D heterostructures and expose buried interfaces for direct characterization.