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Hyot B, Ligaud C, Yoo TJ, David-Vifflantzeff J, Gauthier N, Cadot S, Le VH, Brunet P, Le Van-Jodin L. Towards large scale integration of MoS 2/graphene heterostructure with ALD-grown MoS 2. Nanotechnology 2024; 35:165503. [PMID: 38211319 DOI: 10.1088/1361-6528/ad1d7c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2023] [Accepted: 01/11/2024] [Indexed: 01/13/2024]
Abstract
In the pursuit of ultrathin and highly sensitive photodetectors, a promising approach involves leveraging the combination of light-sensitive two-dimensional (2D) semiconducting transition-metal dichalcogenides, such as MoS2and the high electrical conductivity of graphene. Over the past decade, exfoliated 2D materials and electron-beam lithography have been used extensively to demonstrate feasibility on single devices. But for these devices to be used in the real-world systems, it is necessary to demonstrate good device performance similar to lab-based devices with repeatability of the results from device to device and a path to large scale manufacturing. To work in this way, a fabrication process of MoS2/graphene vertical heterostructures with a wafer-scale integration in a CMOS compatible foundry environment is evaluated here. Large-scale atomic layer deposition on 8 inch silicon wafers is used for the growth of MoS2layers which are then transferred on a 4 inch graphene-based wafer. The MoS2/graphene phototransistors are fabricated collectively, achieving a minimum channel length of 10μm. The results measured on dozen of devices demonstrate a photoresponsivity of 50 A W-1and a remarkable sensitivity as low as 10 nW at 660 nm. These results not only compete with lab-based photodetectors made of chemical vapor deposition grown MoS2layers transferred on graphene, but also pave the way for the large-scale integration of these emerging 2D heterostructures in optoelectronic devices and sensors.
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Affiliation(s)
- Bérangère Hyot
- Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
| | | | - Tae Jin Yoo
- Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
| | | | | | - Stéphane Cadot
- Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
| | - Van Hoan Le
- Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
| | - Paul Brunet
- Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
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Paillet C, Vézian S, Matei C, Michon A, Damilano B, Dussaigne A, Hyot B. InGaN islands and thin films grown on epitaxial graphene. Nanotechnology 2020; 31:405601. [PMID: 32485697 DOI: 10.1088/1361-6528/ab98bd] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In this work, the growth of InGaN on epitaxial graphene by molecular beam epitaxy is studied. The nucleation of the alloy follows a three-dimensional (3D) growth mode in the observed temperature range of 515 °C-765 °C, leading to the formation of dendrite-like islands. Careful Raman scattering experiments show that the graphene underneath is not degraded by the InGaN growth. Moreover, lateral displacement of the nuclei during an atomic force microscopy (AFM) scan demonstrates weak bonding interactions between the InGaN and the graphene. Finally, a longer growth time of the alloy gives rise to a compact thin film in a partial epitaxial relationship with the SiC underneath the graphene.
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Affiliation(s)
- C Paillet
- Université Grenoble Alpes, CEA-LETI, 17 Avenue des Martyrs, F-38054 Grenoble, France. Université Côte d'Azur, CNRS-CRHEA, rue Bernard Gregory, 06560 Valbonne, France
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Dappe YJ, Almadori Y, Dau MT, Vergnaud C, Jamet M, Paillet C, Journot T, Hyot B, Pochet P, Grévin B. Charge transfers and charged defects in WSe 2/graphene-SiC interfaces. Nanotechnology 2020; 31:255709. [PMID: 32182596 DOI: 10.1088/1361-6528/ab8083] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We report on Kelvin probe force microscopy (KPFM) and density functional theory (DFT) investigations of charge transfers in vertical heterojunctions between tungsten diselenide (WSe2) layers and graphene on silicon carbide substrates. The experimental data reveal the existence of an interface dipole, which is shown by DFT to originate from the neutralization of the graphene n-doping by an electron transfer towards the transition metal dichalcogenide (TMD) layer. The relative vacuum level shift probed by KPFM between the TMD and the substrate stays constant when passing from monolayer to bilayer graphene, which confirms that the Schottky-Mott model can be rigorously applied to these interfaces by taking into account the charge transfer from the substrate to the TMD. DFT calculations show that the first TMD layer absorbs almost all the excess charges contained in the graphene, and that the second TMD layer shall not play a significant role in the electrostatics of the system. Negatively charged defect at the TMD edges contribute however to the electrostatic landscape probed by KPFM on both TMD layers.
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Affiliation(s)
- Y J Dappe
- SPEC, CEA, CNRS, Université Paris Saclay, CEA Saclay, 91191 Gif-sur-Yvette Cedex France
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Journot T, Okuno H, Mollard N, Michon A, Dagher R, Gergaud P, Dijon J, Kolobov AV, Hyot B. Remote epitaxy using graphene enables growth of stress-free GaN. Nanotechnology 2019; 30:505603. [PMID: 31530744 DOI: 10.1088/1361-6528/ab4501] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The properties of group III-Nitrides (III-N) such as a large direct bandgap, high melting point, and high breakdown voltage make them very attractive for optoelectronic applications. However, conventional epitaxy on SiC and sapphire substrates results in strained and defective films with consequently poor device performance. In this work, by studying the nucleation of GaN on graphene/SiC by MOVPE, we unambiguously demonstrate the possibility of remote van der Waals epitaxy. By choosing the appropriate growth conditions, GaN crystals can grow either in-plane misoriented or fully epitaxial to the substrate. The adhesion forces across the GaN and graphene interface are very weak and the micron-scale nuclei can be easily moved around. The combined use of x-ray diffraction and transmission electron microscopy demonstrate the growth of stress-free and dislocation-free crystals. The high quality of the crystals was further confirmed by photoluminescence measurements. First principles calculations additionally highlighted the importance of the polarity of the underlying substrate. This work lays the first brick towards the synthesis of high quality III-N thin films grown via van der Waals epitaxy.
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Affiliation(s)
- T Journot
- Univ. Grenoble Alpes, F-38000 Grenoble, France. CEA, LETI, MINATEC campus, F-38000 Grenoble, France
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Gao X, Yang B, Devaux X, Yang H, Liu J, Liang S, Stoffel M, Pasquier L, Hyot B, Grenier A, Bernier N, Migot S, Mangin S, Rinnert H, Jiang C, Zeng Z, Tang N, Sun Q, Ding S, Yang H, Lu Y. Evidence of a strong perpendicular magnetic anisotropy in Au/Co/MgO/GaN heterostructures. Nanoscale Adv 2019; 1:4466-4475. [PMID: 36134416 PMCID: PMC9416972 DOI: 10.1039/c9na00340a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/30/2019] [Accepted: 09/29/2019] [Indexed: 06/16/2023]
Abstract
We report a strong perpendicular magnetic anisotropy (PMA) in Au/Co/MgO/GaN heterostructures from both experiments and first-principles calculations. The Au/Co/MgO heterostructures have been grown by molecular beam epitaxy (MBE) on GaN/sapphire substrates. By carefully optimizing the growth conditions, we obtained a fully epitaxial structure with a crystalline orientation relationship Au(111)[1̄10]//Co(0001)[112̄0]//MgO(111)[101̄]//GaN(0002)[112̄0]. More interestingly, we demonstrate that a 4.6 nm thick Co film grown on MgO/GaN still exhibits a large perpendicular magnetic anisotropy. First-principles calculations performed on the Co (4ML)/MgO(111) structure showed that the MgO(111) surface can strongly enhance the magnetic anisotropy energy by 40% compared to a reference 4ML thick Co hcp film. Our layer-resolved and orbital-hybridization resolved anisotropy analyses helped to clarify that the origin of the PMA enhancement is due to the interfacial hybridization of O 2p and Co 3d orbitals at the Co/MgO interface. The perpendicularly magnetized Au/Co/MgO/GaN heterostructures are promising for efficient spin injection and detection in GaN based opto-electronics without any external magnetic field.
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Affiliation(s)
- Xue Gao
- School of Nano Technology and Nano Bionics, University of Science and Technology of China 96 Jinzhai Road Baohe Hefei 230026 P. R. China
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 P. R. China
| | - Baishun Yang
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences Ningbo 315201 P. R. China
| | - Xavier Devaux
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
| | - Hongxin Yang
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences Ningbo 315201 P. R. China
| | - Jianping Liu
- School of Nano Technology and Nano Bionics, University of Science and Technology of China 96 Jinzhai Road Baohe Hefei 230026 P. R. China
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 P. R. China
| | - Shiheng Liang
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
| | - Mathieu Stoffel
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
| | - Ludovic Pasquier
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
| | | | | | | | - Sylvie Migot
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
| | - Stéphane Mangin
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
| | - Hervé Rinnert
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
| | - Chunping Jiang
- School of Nano Technology and Nano Bionics, University of Science and Technology of China 96 Jinzhai Road Baohe Hefei 230026 P. R. China
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 P. R. China
| | - Zhongming Zeng
- School of Nano Technology and Nano Bionics, University of Science and Technology of China 96 Jinzhai Road Baohe Hefei 230026 P. R. China
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 P. R. China
| | - Ning Tang
- School of Physics, Peking University 100871 Beijing P. R. China
| | - Qian Sun
- School of Nano Technology and Nano Bionics, University of Science and Technology of China 96 Jinzhai Road Baohe Hefei 230026 P. R. China
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 P. R. China
| | - Sunan Ding
- School of Nano Technology and Nano Bionics, University of Science and Technology of China 96 Jinzhai Road Baohe Hefei 230026 P. R. China
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 P. R. China
| | - Hui Yang
- School of Nano Technology and Nano Bionics, University of Science and Technology of China 96 Jinzhai Road Baohe Hefei 230026 P. R. China
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences Suzhou 215123 P. R. China
| | - Yuan Lu
- Université de Lorraine, CNRS, Institut Jean Lamour, UMR 7198 campus ARTEM, 2 Allée André Guinier 54011 Nancy France
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Journot T, Bouchiat V, Gayral B, Dijon J, Hyot B. Self-Assembled UV Photodetector Made by Direct Epitaxial GaN Growth on Graphene. ACS Appl Mater Interfaces 2018; 10:18857-18862. [PMID: 29745232 DOI: 10.1021/acsami.8b01194] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Hybrid systems based on the combination of crystalline bulk semiconductors with 2D crystals are identified as promising heterogeneous structures for new optoelectronic applications. The direct integration of III-V semiconductors on 2D materials is very attractive to make practical devices but the preservation of the intrinsic properties of the underlying 2D materials remains a challenge. In this work, we study the direct epitaxy of self-organized GaN crystals on graphene. We demonstrate that severe metal-organic chemical vapor deposition growth conditions of GaN (chemically aggressive precursors and high temperatures) are not detrimental to the structural quality and the charge carrier mobility of the graphene base plane. Graphene can therefore be used both as an efficient sensitive material and as a substrate for GaN epitaxy to make a self-assembled UV photodetector. A responsivity as high as 2 A W-1 is measured in the UV-A range without any further postprocessing compared to simple deposition of contact electrodes. Our study opens the way to build new self-assembled 2D/III-V hybrid optoelectronic devices by direct epitaxy.
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Affiliation(s)
- Timotée Journot
- Univ. Grenoble Alpes , 38000 Grenoble , France
- CEA, LETI, MINATEC Campus , 38000 Grenoble , France
| | - Vincent Bouchiat
- Univ. Grenoble Alpes , 38000 Grenoble , France
- CNRS-Grenoble, Institut Néel , 38000 Grenoble , France
| | - Bruno Gayral
- Univ. Grenoble Alpes , 38000 Grenoble , France
- CEA, INAC-PHELIQS , 38000 Grenoble , France
| | - Jean Dijon
- Univ. Grenoble Alpes , 38000 Grenoble , France
- CEA, LITEN, MINATEC Campus , 38000 Grenoble , France
| | - Bérangère Hyot
- Univ. Grenoble Alpes , 38000 Grenoble , France
- CEA, LETI, MINATEC Campus , 38000 Grenoble , France
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Kolobov AV, Fons P, Tominaga J, Hyot B, André B. Instability and Spontaneous Reconstruction of Few-Monolayer Thick GaN Graphitic Structures. Nano Lett 2016; 16:4849-4856. [PMID: 27387659 DOI: 10.1021/acs.nanolett.6b01225] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Two-dimensional (2D) semiconductors are a very hot topic in solid state science and technology. In addition to van der Waals solids that can be easily formed into 2D layers, it was argued that single layers of nominally 3D tetrahedrally bonded semiconductors, such as GaN or ZnO, also become flat in the monolayer limit; the planar structure was also proposed for few-layers of such materials. In this work, using first-principles calculations, we demonstrate that contrary to the existing consensus the graphitic structure of few-layer GaN is unstable and spontaneously reconstructs into a structure that remains hexagonal in plane but with covalent interlayer bonds that form alternating octagonal and square (8|4 Haeckelite) rings with pronounced in-plane anisotropy. Of special interest is the transformation of the band gap from indirect in planar GaN toward direct in the Haeckelite phase, making Haeckelite few-layer GaN an appealing material for flexible nano-optoelectronics.
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Affiliation(s)
- A V Kolobov
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) , 1-1-1 Higashi, Tsukuba 305-8565, Japan
| | - P Fons
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) , 1-1-1 Higashi, Tsukuba 305-8565, Japan
| | - J Tominaga
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) , 1-1-1 Higashi, Tsukuba 305-8565, Japan
| | - B Hyot
- Université Grenoble Alpes, CEA, LETI , MINATEC campus, F38054 Grenoble, France
| | - B André
- Université Grenoble Alpes, CEA, LETI , MINATEC campus, F38054 Grenoble, France
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Hyot B, Gehanno V, Rolland B, Fargeix A, Vannufel C, Charlet F, Béchevet B, Bruneau JM, Desre PJ. Amorphization and Crystallization mechanisms in GeSbTe-based Phase Change Optical Disks. ACTA ACUST UNITED AC 2001. [DOI: 10.3379/jmsjmag.25.414] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/01/2022]
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