1
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Li Y, Yang C, Hu F, Hu H, Xu Y, Deng H, Du Y, Shi X. Dopamine-Modified Chitosan Patterning Hydrogel with Dynamic Information Storage Ability. ACS Appl Mater Interfaces 2024. [PMID: 38650081 DOI: 10.1021/acsami.3c18976] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/25/2024]
Abstract
The storage of dynamic information in hydrogels has aroused considerable interest regarding the multiple responsiveness of soft matter. Herein, we propose an electrical writing methodology to prepare dopamine (DA)-modified chitosan hydrogels with a dynamic information storage ability. A pH-responsive chitosan hydrogel medium was patterned by cathodic writing to in situ generate OH- in the writing area, at which dopamine underwent an auto-oxidation reaction in the locally alkaline environment to generate a dark color. The patterned information on the hydrogel can be encoded simply by electrical signals. The speed of information retrieval is positively correlated with the charge transfer during the electrical writing process, and the hiding of information is negatively correlated with the environmental stimulus (i.e., dopamine concentration, pH value, etc.). To showcase the versatility of this medium for information storage and the precision of the pattern, a quick response (QR) code is electronically written on dopamine-modified chitosan hydrogel and can be recognized programmably by a standard mobile phone. The results show that electrical regulation is a novel means to program the information storage process of hydrogels, which inspires future research on structural and functional information storage using stimulus-responsive hydrogels.
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Affiliation(s)
- Yuting Li
- School of Resource and Environmental Science, Hubei Engineering Center of Natural Polymers-Based Medical Materials, Hubei Biomass-Resource Chemistry and Environmental Biotechnology Key Laboratory, Hubei International Scientific and Technological Cooperation Base of Sustainable Resource and Energy, Wuhan University, Wuhan 430079, China
| | - Chen Yang
- School of Resource and Environmental Science, Hubei Engineering Center of Natural Polymers-Based Medical Materials, Hubei Biomass-Resource Chemistry and Environmental Biotechnology Key Laboratory, Hubei International Scientific and Technological Cooperation Base of Sustainable Resource and Energy, Wuhan University, Wuhan 430079, China
| | - Feng Hu
- School of Resource and Environmental Science, Hubei Engineering Center of Natural Polymers-Based Medical Materials, Hubei Biomass-Resource Chemistry and Environmental Biotechnology Key Laboratory, Hubei International Scientific and Technological Cooperation Base of Sustainable Resource and Energy, Wuhan University, Wuhan 430079, China
| | - Hui Hu
- School of Resource and Environmental Science, Hubei Engineering Center of Natural Polymers-Based Medical Materials, Hubei Biomass-Resource Chemistry and Environmental Biotechnology Key Laboratory, Hubei International Scientific and Technological Cooperation Base of Sustainable Resource and Energy, Wuhan University, Wuhan 430079, China
| | - Yuncheng Xu
- School of Resource and Environmental Science, Hubei Engineering Center of Natural Polymers-Based Medical Materials, Hubei Biomass-Resource Chemistry and Environmental Biotechnology Key Laboratory, Hubei International Scientific and Technological Cooperation Base of Sustainable Resource and Energy, Wuhan University, Wuhan 430079, China
| | - Hongbing Deng
- School of Resource and Environmental Science, Hubei Engineering Center of Natural Polymers-Based Medical Materials, Hubei Biomass-Resource Chemistry and Environmental Biotechnology Key Laboratory, Hubei International Scientific and Technological Cooperation Base of Sustainable Resource and Energy, Wuhan University, Wuhan 430079, China
| | - Yumin Du
- School of Resource and Environmental Science, Hubei Engineering Center of Natural Polymers-Based Medical Materials, Hubei Biomass-Resource Chemistry and Environmental Biotechnology Key Laboratory, Hubei International Scientific and Technological Cooperation Base of Sustainable Resource and Energy, Wuhan University, Wuhan 430079, China
| | - Xiaowen Shi
- School of Resource and Environmental Science, Hubei Engineering Center of Natural Polymers-Based Medical Materials, Hubei Biomass-Resource Chemistry and Environmental Biotechnology Key Laboratory, Hubei International Scientific and Technological Cooperation Base of Sustainable Resource and Energy, Wuhan University, Wuhan 430079, China
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2
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Thomas H, Achenbach T, Hodgkinson IM, Spoerer Y, Kuehnert I, Dornack C, Schellhammer KS, Reineke S. Room Temperature Phosphorescence from Natural, Organic Emitters and Their Application in Industrially Compostable Programmable Luminescent Tags. Adv Mater 2024:e2310674. [PMID: 38581239 DOI: 10.1002/adma.202310674] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2023] [Revised: 03/21/2024] [Indexed: 04/08/2024]
Abstract
Organic semiconductors provide the potential of biodegradable technologies, but prototypes do only rarely exist. Transparent, ultrathin programmable luminescent tags (PLTs) are presented for minimalistic yet efficient information storage that are fully made from biodegradable or at least industrially compostable, ready-to-use materials (bioPLTs). As natural emitters, the quinoline alkaloids show sufficient room temperature phosphorescence when being embedded in polymer matrices with cinchonine exhibiting superior performance. Polylactic acid provides a solution for both the matrix material and the flexible substrate. Room temperature phosphorescence can be locally controlled by the oxygen concentration in the film by using Exceval as additional oxygen blocking layers. These bioPLTs exhibit all function-defining characteristics also found in their regular nonenvironmentally degradable analogs and, additionally, provide a simplified, high-contrast readout under continuous-wave illumination as a consequence of the unique luminescence properties of the natural emitter cinchonine. Limitations for flexible devices arise from limited thermal stability of the polylactic acid foil used as substrate allowing only for one writing cycle and preventing an annealing step during fabrication. Few-cycle reprogramming is possible when using the architecture of the bioPLTs on regular quartz substrates. This work realizes the versatile platform of PLTs with less harmful materials offering more sustainable use in future.
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Affiliation(s)
- Heidi Thomas
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Hermann-Krone-Bau, Nöthnitzer Str. 61, 01187, Dresden, Germany
| | - Tim Achenbach
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Hermann-Krone-Bau, Nöthnitzer Str. 61, 01187, Dresden, Germany
| | - Isla Marie Hodgkinson
- Chair of Waste Management and Circular Economy, Technische Universität Dresden, Pratzschwitzer Str. 15, 01796, Pirna, Germany
| | - Yvonne Spoerer
- Department Processing Technology, Institute of Polymer Materials, Leibniz-Institut fuer Polymerforschung Dresden e.V., Hohe Straße 6, 01069, Dresden, Germany
| | - Ines Kuehnert
- Department Processing Technology, Institute of Polymer Materials, Leibniz-Institut fuer Polymerforschung Dresden e.V., Hohe Straße 6, 01069, Dresden, Germany
| | - Christina Dornack
- Chair of Waste Management and Circular Economy, Technische Universität Dresden, Pratzschwitzer Str. 15, 01796, Pirna, Germany
| | - Karl Sebastian Schellhammer
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Hermann-Krone-Bau, Nöthnitzer Str. 61, 01187, Dresden, Germany
| | - Sebastian Reineke
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Hermann-Krone-Bau, Nöthnitzer Str. 61, 01187, Dresden, Germany
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3
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Geng L, Wang P, Lin S, Shi R, Zhao J, Luo Z. On the nature of Co n±/0 clusters reacting with water and oxygen. Commun Chem 2024; 7:68. [PMID: 38555377 PMCID: PMC10981683 DOI: 10.1038/s42004-024-01159-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/30/2023] [Accepted: 03/22/2024] [Indexed: 04/02/2024] Open
Abstract
Bulk cobalt does not react with water at room temperature, but cobalt nanometals could yield corrosion at ambient conditions. Insights into the cobalt cluster reactions with water and oxygen enable us to better understand the interface reactivity of such nanometals. Here we report a comprehensive study on the gas-phase reactions of Con±/0 clusters with water and oxygen. All these Con±/0 clusters were found to react with oxygen, but only anionic cobalt clusters give rise to water dissociation whereas the cationic and neutral ones are limited to water adsorption. We elucidate the influences of charge states, bonding modes and dehydrogenation mechanism of water on typical cobalt clusters. It is unveiled that the additional electron of anionic Con- clusters is not beneficial to H2O adsorption, but allows for thermodynamics- and kinetics-favourable H atom transfer and dehydrogenation reactions. Apart from the charge effect, size effect and spin effect play a subtle role in the reaction process. The synergy of multiple metal sites in Con- clusters reduces the energy barrier of the rate-limiting step enabling hydrogen release. This finding of water dissociation on cobalt clusters put forward new connotations on the activity series of metals, providing new insights into the corrosion mechanism of cobalt nanometals.
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Affiliation(s)
- Lijun Geng
- Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, Institute of Chemistry, Chinese Academy of Sciences, Beijing, P. R. China
| | - Pengju Wang
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian, P. R. China
| | - Shiquan Lin
- Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, Institute of Chemistry, Chinese Academy of Sciences, Beijing, P. R. China
- University of Chinese Academy of Sciences, Beijing, P. R. China
| | - Ruili Shi
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian, P. R. China
| | - Jijun Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian, P. R. China.
- Guangdong Basic Research Centre of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, P. R. China.
| | - Zhixun Luo
- Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, Institute of Chemistry, Chinese Academy of Sciences, Beijing, P. R. China.
- University of Chinese Academy of Sciences, Beijing, P. R. China.
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4
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Masuda H, Seki T, Ohe JI, Nii Y, Masuda H, Takanashi K, Onose Y. Room temperature chirality switching and detection in a helimagnetic MnAu 2 thin film. Nat Commun 2024; 15:1999. [PMID: 38453940 PMCID: PMC10920692 DOI: 10.1038/s41467-024-46326-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Accepted: 02/22/2024] [Indexed: 03/09/2024] Open
Abstract
Helimagnetic structures, in which the magnetic moments are spirally ordered, host an internal degree of freedom called chirality corresponding to the handedness of the helix. The chirality seems quite robust against disturbances and is therefore promising for next-generation magnetic memory. While the chirality control was recently achieved by the magnetic field sweep with the application of an electric current at low temperature in a conducting helimagnet, problems such as low working temperature and cumbersome control and detection methods have to be solved in practical applications. Here we show chirality switching by electric current pulses at room temperature in a thin-film MnAu2 helimagnetic conductor. Moreover, we have succeeded in detecting the chirality at zero magnetic fields by means of simple transverse resistance measurement utilizing the spin Berry phase in a bilayer device composed of MnAu2 and a spin Hall material Pt. These results may pave the way to helimagnet-based spintronics.
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Affiliation(s)
- Hidetoshi Masuda
- Institute for Materials Research, Tohoku University, Sendai, Japan.
| | - Takeshi Seki
- Institute for Materials Research, Tohoku University, Sendai, Japan.
| | - Jun-Ichiro Ohe
- Department of Physics, Toho University, Funabashi, Japan
| | - Yoichi Nii
- Institute for Materials Research, Tohoku University, Sendai, Japan
- PRESTO, Japan Science and Technology Agency, Kawaguchi, Japan
| | - Hiroto Masuda
- Institute for Materials Research, Tohoku University, Sendai, Japan
| | - Koki Takanashi
- Institute for Materials Research, Tohoku University, Sendai, Japan
- Center for Science and Innovation in Spintronics, Tohoku University, Sendai, Japan
- Advanced Science Research Center, Japan Atomic Energy Agency, Ibaraki, Japan
| | - Yoshinori Onose
- Institute for Materials Research, Tohoku University, Sendai, Japan.
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5
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Martin A, Pauls AM, Chang B, Boyce E, Thuo M. Photo-Activated Growth and Metastable Phase Transition in Metallic Solid Solutions. Adv Mater 2024; 36:e2309865. [PMID: 38042991 DOI: 10.1002/adma.202309865] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/22/2023] [Revised: 11/29/2023] [Indexed: 12/04/2023]
Abstract
Laser processing in metals is versatile yet limited by its reliance on phase transformation through heating rather than electronic excitation due to their low absorptivity, attributing from highly ordered structures. Metastable states (i.e., surfaces, glasses, undercooled liquids), however, present a unique platform, both energetically and structurally to enable energy landscape tuning through selective stimuli. Herein, this ansatz is demonstrated by exploiting thin passivating oxides to stabilize an undercooled state, followed by photo-perturbation of the near surface order to induce convective Marangoni flows, edge-coalescence and phase transition into a larger metastable solid bearing asymmetric composition between the near surface and core of the formed structure. The self-terminating nature of the process creates a perfectly contained system which can maintain a high relaxation energy barrier hence deep metastable states for extended periods of time.
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Affiliation(s)
- Andrew Martin
- North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC, 27695, USA
- Iowa State University, Department of Materials Science and Engineering, Ames, IA, 50010, USA
| | - Alana M Pauls
- North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC, 27695, USA
- Iowa State University, Department of Materials Science and Engineering, Ames, IA, 50010, USA
| | - Boyce Chang
- Iowa State University, Department of Materials Science and Engineering, Ames, IA, 50010, USA
| | - Eva Boyce
- North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC, 27695, USA
| | - Martin Thuo
- North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC, 27695, USA
- Iowa State University, Department of Materials Science and Engineering, Ames, IA, 50010, USA
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6
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Xie Y, Tong Z, Xia T, Worch JC, Rho JY, Dove AP, O'Reilly RK. 2D Hierarchical Microbarcodes with Expanded Storage Capacity for Optical Multiplex and Information Encryption. Adv Mater 2024; 36:e2308154. [PMID: 38014933 DOI: 10.1002/adma.202308154] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/11/2023] [Revised: 11/16/2023] [Indexed: 11/29/2023]
Abstract
The design of nanosegregated fluorescent tags/barcodes by geometrical patterning with precise dimensions and hierarchies could integrate multilevel optical information within one carrier and enhance microsized barcoding techniques for ultrahigh-density optical data storage and encryption. However, precise control of the spatial distribution in micro/nanosized matrices intrinsically limits the accessible barcoding applications in terms of material design and construction. Here, crystallization forces are leveraged to enable a rapid, programmable molecular packing and rapid epitaxial growth of fluorescent units in 2D via crystallization-driven self-assembly. The fluorescence encoding density, scalability, information storage capacity, and decoding techniques of the robust 2D polymeric barcoding platform are explored systematically. These results provide both a theoretical and an experimental foundation for expanding the fluorescence storage capacity, which is a longstanding challenge in state-of-the-art microbarcoding techniques and establish a generalized and adaptable coding platform for high-throughput analysis and optical multiplexing.
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Affiliation(s)
- Yujie Xie
- School of Chemistry, University of Birmingham, Edgbaston, Birmingham, B15 2TT, UK
- School of Medicine, Shanghai University, Shanghai, 200444, China
| | - Zaizai Tong
- School of Chemistry, University of Birmingham, Edgbaston, Birmingham, B15 2TT, UK
- College of Materials Science and Engineering, Zhejiang Sci-Tech University, Hangzhou, 310018, China
| | - Tianlai Xia
- School of Chemistry, University of Birmingham, Edgbaston, Birmingham, B15 2TT, UK
| | - Joshua C Worch
- School of Chemistry, University of Birmingham, Edgbaston, Birmingham, B15 2TT, UK
| | - Julia Y Rho
- School of Chemistry, University of Birmingham, Edgbaston, Birmingham, B15 2TT, UK
| | - Andrew P Dove
- School of Chemistry, University of Birmingham, Edgbaston, Birmingham, B15 2TT, UK
| | - Rachel K O'Reilly
- School of Chemistry, University of Birmingham, Edgbaston, Birmingham, B15 2TT, UK
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7
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Chen S, Ju Y, Yang Y, Xiang F, Yao Z, Zhang H, Li Y, Zhang Y, Xiang S, Chen B, Zhang Z. Author Correction: Multistate structures in a hydrogen-bonded polycatenation non-covalent organic framework with diverse resistive switching behaviors. Nat Commun 2024; 15:879. [PMID: 38287006 PMCID: PMC10825136 DOI: 10.1038/s41467-024-45253-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/31/2024] Open
Affiliation(s)
- Shimin Chen
- Fujian Provincial Key Laboratory of Polymer Materials, College of Materials Science and Engineering, Fujian Normal University, Fuzhou, 350007, Fujian, China
| | - Yan Ju
- Fujian Provincial Key Laboratory of Polymer Materials, College of Materials Science and Engineering, Fujian Normal University, Fuzhou, 350007, Fujian, China
| | - Yisi Yang
- Fujian Provincial Key Laboratory of Polymer Materials, College of Materials Science and Engineering, Fujian Normal University, Fuzhou, 350007, Fujian, China
| | - Fahui Xiang
- Fujian Provincial Key Laboratory of Polymer Materials, College of Materials Science and Engineering, Fujian Normal University, Fuzhou, 350007, Fujian, China
| | - Zizhu Yao
- Fujian Provincial Key Laboratory of Polymer Materials, College of Materials Science and Engineering, Fujian Normal University, Fuzhou, 350007, Fujian, China
| | - Hao Zhang
- Fujian Provincial Key Laboratory of Polymer Materials, College of Materials Science and Engineering, Fujian Normal University, Fuzhou, 350007, Fujian, China
| | - Yunbin Li
- Fujian Provincial Key Laboratory of Polymer Materials, College of Materials Science and Engineering, Fujian Normal University, Fuzhou, 350007, Fujian, China
| | - Yongfan Zhang
- College of Chemistry, Fuzhou University, Fuzhou, 350108, China
| | - Shengchang Xiang
- Fujian Provincial Key Laboratory of Polymer Materials, College of Materials Science and Engineering, Fujian Normal University, Fuzhou, 350007, Fujian, China
| | - Banglin Chen
- Fujian Provincial Key Laboratory of Polymer Materials, College of Materials Science and Engineering, Fujian Normal University, Fuzhou, 350007, Fujian, China
| | - Zhangjing Zhang
- Fujian Provincial Key Laboratory of Polymer Materials, College of Materials Science and Engineering, Fujian Normal University, Fuzhou, 350007, Fujian, China.
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8
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Zheng Z, Zeng T, Zhao T, Shi S, Ren L, Zhang T, Jia L, Gu Y, Xiao R, Zhou H, Zhang Q, Lu J, Wang G, Zhao C, Li H, Tay BK, Chen J. Effective electrical manipulation of a topological antiferromagnet by orbital torques. Nat Commun 2024; 15:745. [PMID: 38272914 PMCID: PMC10811228 DOI: 10.1038/s41467-024-45109-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/25/2023] [Accepted: 01/09/2024] [Indexed: 01/27/2024] Open
Abstract
The electrical control of the non-trivial topology in Weyl antiferromagnets is of great interest for the development of next-generation spintronic devices. Recent studies suggest that the spin Hall effect can switch the topological antiferromagnetic order. However, the switching efficiency remains relatively low. Here, we demonstrate the effective manipulation of antiferromagnetic order in the Weyl semimetal Mn3Sn using orbital torques originating from either metal Mn or oxide CuOx. Although Mn3Sn can convert orbital current to spin current on its own, we find that inserting a heavy metal layer, such as Pt, of appropriate thickness can effectively reduce the critical switching current density by one order of magnitude. In addition, we show that the memristor-like switching behaviour of Mn3Sn can mimic the potentiation and depression processes of a synapse with high linearity-which may be beneficial for constructing accurate artificial neural networks. Our work paves a way for manipulating the topological antiferromagnetic order and may inspire more high-performance antiferromagnetic functional devices.
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Affiliation(s)
- Zhenyi Zheng
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Tao Zeng
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Tieyang Zhao
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Shu Shi
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Lizhu Ren
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Tongtong Zhang
- Centre for Micro- and Nano-Electronics (CMNE), School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore, Singapore
| | - Lanxin Jia
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Youdi Gu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Rui Xiao
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Hengan Zhou
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Qihan Zhang
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Jiaqi Lu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Guilei Wang
- Beijing Superstring Academy of Memory Technology, Beijing, 100176, China
| | - Chao Zhao
- Beijing Superstring Academy of Memory Technology, Beijing, 100176, China
| | - Huihui Li
- Beijing Superstring Academy of Memory Technology, Beijing, 100176, China.
| | - Beng Kang Tay
- Centre for Micro- and Nano-Electronics (CMNE), School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore, Singapore.
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
- Chongqing Research Institute, National University of Singapore, Chongqing, 401120, China.
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9
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Feng G, Zhu Q, Liu X, Chen L, Zhao X, Liu J, Xiong S, Shan K, Yang Z, Bao Q, Yue F, Peng H, Huang R, Tang X, Jiang J, Tang W, Guo X, Wang J, Jiang A, Dkhil B, Tian B, Chu J, Duan C. A ferroelectric fin diode for robust non-volatile memory. Nat Commun 2024; 15:513. [PMID: 38218871 PMCID: PMC10787831 DOI: 10.1038/s41467-024-44759-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Accepted: 12/29/2023] [Indexed: 01/15/2024] Open
Abstract
Among today's nonvolatile memories, ferroelectric-based capacitors, tunnel junctions and field-effect transistors (FET) are already industrially integrated and/or intensively investigated to improve their performances. Concurrently, because of the tremendous development of artificial intelligence and big-data issues, there is an urgent need to realize high-density crossbar arrays, a prerequisite for the future of memories and emerging computing algorithms. Here, a two-terminal ferroelectric fin diode (FFD) in which a ferroelectric capacitor and a fin-like semiconductor channel are combined to share both top and bottom electrodes is designed. Such a device not only shows both digital and analog memory functionalities but is also robust and universal as it works using two very different ferroelectric materials. When compared to all current nonvolatile memories, it cumulatively demonstrates an endurance up to 1010 cycles, an ON/OFF ratio of ~102, a feature size of 30 nm, an operating energy of ~20 fJ and an operation speed of 100 ns. Beyond these superior performances, the simple two-terminal structure and their self-rectifying ratio of ~ 104 permit to consider them as new electronic building blocks for designing passive crossbar arrays which are crucial for the future in-memory computing.
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Affiliation(s)
- Guangdi Feng
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
- Zhejiang Lab, Hangzhou, 310000, China
| | - Qiuxiang Zhu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
- Zhejiang Lab, Hangzhou, 310000, China
| | - Xuefeng Liu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Luqiu Chen
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Xiaoming Zhao
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Jianquan Liu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Shaobing Xiong
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
- Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Kexiang Shan
- Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Zhenzhong Yang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Qinye Bao
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Fangyu Yue
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Hui Peng
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Rong Huang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Xiaodong Tang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Jie Jiang
- Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Wei Tang
- National Engineering Laboratory of TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200030, China
| | - Xiaojun Guo
- National Engineering Laboratory of TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200030, China
| | - Jianlu Wang
- Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Anquan Jiang
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Brahim Dkhil
- Université Paris-Saclay, CentraleSupélec, CNRS-UMR8580, Laboratoire SPMS, 91190, Gif-sur-Yvette, France
| | - Bobo Tian
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China.
- Zhejiang Lab, Hangzhou, 310000, China.
| | - Junhao Chu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
- Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Chungang Duan
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China
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10
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Prokhorenko S, Nahas Y, Govinden V, Zhang Q, Valanoor N, Bellaiche L. Motion and teleportation of polar bubbles in low-dimensional ferroelectrics. Nat Commun 2024; 15:412. [PMID: 38195617 PMCID: PMC10776862 DOI: 10.1038/s41467-023-44639-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/11/2019] [Accepted: 12/26/2023] [Indexed: 01/11/2024] Open
Abstract
Electric bubbles are sub-10nm spherical vortices of electric dipoles that can spontaneously form in ultra-thin ferroelectrics. While the static properties of electric bubbles are well established, little to nothing is known about the dynamics of these particle-like structures. Here, we reveal pathways to realizing both the spontaneous and controlled dynamics of electric bubbles in ultra-thin Pb(Zr0.4Ti0.6)O3 films. In low screening conditions, we find that electric bubbles exhibit thermally-driven chaotic motion giving rise to a liquid-like state. In the high screening regime, we show that bubbles remain static but can be continuously displaced by a local electric field. Additionally, we predict and experimentally demonstrate the possibility of bubble teleportation - a process wherein a bubble is transferred to a new location via a single electric field pulse of a PFM tip. Finally, we attribute the discovered phenomena to the hierarchical structure of the energy landscape.
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Affiliation(s)
- S Prokhorenko
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.
| | - Y Nahas
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - V Govinden
- School of Materials Science and Engineering, The University of New South Wales, Sydney, NSW, 2052, Australia
| | - Q Zhang
- School of Materials Science and Engineering, The University of New South Wales, Sydney, NSW, 2052, Australia.
- CSIRO Manufacturing, Lindfield, NSW, 2070, Australia.
| | - N Valanoor
- School of Materials Science and Engineering, The University of New South Wales, Sydney, NSW, 2052, Australia
| | - L Bellaiche
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
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11
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Chen S, Ju Y, Yang Y, Xiang F, Yao Z, Zhang H, Li Y, Zhang Y, Xiang S, Chen B, Zhang Z. Multistate structures in a hydrogen-bonded polycatenation non-covalent organic framework with diverse resistive switching behaviors. Nat Commun 2024; 15:298. [PMID: 38182560 PMCID: PMC10770064 DOI: 10.1038/s41467-023-44214-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/17/2023] [Accepted: 12/05/2023] [Indexed: 01/07/2024] Open
Abstract
The inherent structural flexibility and reversibility of non-covalent organic frameworks have enabled them to exhibit switchable multistate structures under external stimuli, providing great potential in the field of resistive switching (RS), but not well explored yet. Herein, we report the 0D+1D hydrogen-bonded polycatenation non-covalent organic framework (HOF-FJU-52), exhibiting diverse and reversible RS behaviors with the high performance. Triggered by the external stimulus of electrical field E at room temperature, HOF-FJU-52 has excellent resistive random-access memory (RRAM) behaviors, comparable to the state-of-the-art materials. When cooling down below 200 K, it was transferred to write-once-read-many-times memory (WORM) behaviors. The two memory behaviors exhibit reversibility on a single crystal device through the temperature changes. The RS mechanism of this non-covalent organic framework has been deciphered at the atomic level by the detailed single-crystal X-ray diffraction analyses, demonstrating that the structural dual-flexibility both in the asymmetric hydrogen bonded dimers within the 0D loops and in the infinite π-π stacking column between the loops and chains contribute to reversible structure transformations between multi-states and thus to its dual RS behaviors.
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Affiliation(s)
- Shimin Chen
- Fujian Provincial Key Laboratory of Polymer Materials, College of Materials Science and Engineering, Fujian Normal University, Fuzhou, 350007, Fujian, China
| | - Yan Ju
- Fujian Provincial Key Laboratory of Polymer Materials, College of Materials Science and Engineering, Fujian Normal University, Fuzhou, 350007, Fujian, China
| | - Yisi Yang
- Fujian Provincial Key Laboratory of Polymer Materials, College of Materials Science and Engineering, Fujian Normal University, Fuzhou, 350007, Fujian, China
| | - Fahui Xiang
- Fujian Provincial Key Laboratory of Polymer Materials, College of Materials Science and Engineering, Fujian Normal University, Fuzhou, 350007, Fujian, China
| | - Zizhu Yao
- Fujian Provincial Key Laboratory of Polymer Materials, College of Materials Science and Engineering, Fujian Normal University, Fuzhou, 350007, Fujian, China
| | - Hao Zhang
- Fujian Provincial Key Laboratory of Polymer Materials, College of Materials Science and Engineering, Fujian Normal University, Fuzhou, 350007, Fujian, China
| | - Yunbin Li
- Fujian Provincial Key Laboratory of Polymer Materials, College of Materials Science and Engineering, Fujian Normal University, Fuzhou, 350007, Fujian, China
| | - Yongfan Zhang
- College of Chemistry, Fuzhou University, Fuzhou, 350108, China
| | - Shengchang Xiang
- Fujian Provincial Key Laboratory of Polymer Materials, College of Materials Science and Engineering, Fujian Normal University, Fuzhou, 350007, Fujian, China
| | - Banglin Chen
- Fujian Provincial Key Laboratory of Polymer Materials, College of Materials Science and Engineering, Fujian Normal University, Fuzhou, 350007, Fujian, China
| | - Zhangjing Zhang
- Fujian Provincial Key Laboratory of Polymer Materials, College of Materials Science and Engineering, Fujian Normal University, Fuzhou, 350007, Fujian, China.
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12
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Hu Y, Rogée L, Wang W, Zhuang L, Shi F, Dong H, Cai S, Tay BK, Lau SP. Extendable piezo/ferroelectricity in nonstoichiometric 2D transition metal dichalcogenides. Nat Commun 2023; 14:8470. [PMID: 38123543 PMCID: PMC10733392 DOI: 10.1038/s41467-023-44298-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/17/2023] [Accepted: 12/07/2023] [Indexed: 12/23/2023] Open
Abstract
Engineering piezo/ferroelectricity in two-dimensional materials holds significant implications for advancing the manufacture of state-of-the-art multifunctional materials. The inborn nonstoichiometric propensity of two-dimensional transition metal dichalcogenides provides a spiffy ready-available solution for breaking inversion centrosymmetry, thereby conducing to circumvent size effect challenges in conventional perovskite oxide ferroelectrics. Here, we show the extendable and ubiquitous piezo/ferroelectricity within nonstoichiometric two-dimensional transition metal dichalcogenides that are predominantly centrosymmetric during standard stoichiometric cases. The emerged piezo/ferroelectric traits are aroused from the sliding of van der Waals layers and displacement of interlayer metal atoms triggered by the Frankel defects of heterogeneous interlayer native metal atom intercalation. We demonstrate two-dimensional chromium selenides nanogenerator and iron tellurides ferroelectric multilevel memristors as two representative applications. This innovative approach to engineering piezo/ferroelectricity in ultrathin transition metal dichalcogenides may provide a potential avenue to consolidate piezo/ferroelectricity with featured two-dimensional materials to fabricate multifunctional materials and distinguished multiferroic.
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Affiliation(s)
- Yi Hu
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China
- Centre for Micro- and Nano-Electronics (CMNE), School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 638798, Singapore
| | - Lukas Rogée
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China
| | - Weizhen Wang
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China
| | - Lyuchao Zhuang
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China
| | - Fangyi Shi
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China
| | - Hui Dong
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China
| | - Songhua Cai
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China
| | - Beng Kang Tay
- Centre for Micro- and Nano-Electronics (CMNE), School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 638798, Singapore
- IRL 3288 CINTRA (CNRS-NTU-THALES Research Alliances), Nanyang Technological University, Singapore, 637553, Singapore
| | - Shu Ping Lau
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, PR China.
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13
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Zhou G, Li J, Song Q, Wang L, Ren Z, Sun B, Hu X, Wang W, Xu G, Chen X, Cheng L, Zhou F, Duan S. Full hardware implementation of neuromorphic visual system based on multimodal optoelectronic resistive memory arrays for versatile image processing. Nat Commun 2023; 14:8489. [PMID: 38123562 PMCID: PMC10733375 DOI: 10.1038/s41467-023-43944-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/07/2023] [Accepted: 11/22/2023] [Indexed: 12/23/2023] Open
Abstract
In-sensor and near-sensor computing are becoming the next-generation computing paradigm for high-density and low-power sensory processing. To fulfil a high-density and efficient neuromorphic visual system with fully hierarchical emulation of the retina and visual cortex, emerging multimodal neuromorphic devices for multi-stage processing and a fully hardware-implemented system with versatile image processing functions are still lacking and highly desirable. Here we demonstrate an emerging multimodal-multifunctional resistive random-access memory (RRAM) device array based on modified silk fibroin protein (MSFP), exhibiting both optoelectronic RRAM (ORRAM) mode featured by unique negative and positive photoconductance memory and electrical RRAM (ERRAM) mode featured by analogue resistive switching. A full hardware implementation of the artificial visual system with versatile image processing functions is realised for the first time, including ORRAM mode array for the in-sensor image pre-processing (contrast enhancement, background denoising, feature extraction) and ERRAM mode array for near-sensor high-level image recognition, which hugely improves the integration density, and simply the circuit design and the fabrication and integration complexity.
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Affiliation(s)
- Guangdong Zhou
- College of Artificial Intelligence, Chongqing Key Laboratory of Brain-inspired Computing and Intelligent Chips, Key Laboratory of Luminescence Analysis and Molecular Sensors (Ministry of Education), Southwest University, Chongqing, 400715, China
| | - Jie Li
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Qunliang Song
- Faculty of Materials and Energy, Southwest University, Chongqing, 400715, China
| | - Lidan Wang
- College of Artificial Intelligence, Chongqing Key Laboratory of Brain-inspired Computing and Intelligent Chips, Key Laboratory of Luminescence Analysis and Molecular Sensors (Ministry of Education), Southwest University, Chongqing, 400715, China
| | - Zhijun Ren
- College of Artificial Intelligence, Chongqing Key Laboratory of Brain-inspired Computing and Intelligent Chips, Key Laboratory of Luminescence Analysis and Molecular Sensors (Ministry of Education), Southwest University, Chongqing, 400715, China
| | - Bai Sun
- Frontier Institute of Science and Technology, Xi'an Jiaotong University, Shanxi, 710049, China
| | - Xiaofang Hu
- College of Artificial Intelligence, Chongqing Key Laboratory of Brain-inspired Computing and Intelligent Chips, Key Laboratory of Luminescence Analysis and Molecular Sensors (Ministry of Education), Southwest University, Chongqing, 400715, China
| | - Wenhua Wang
- Faculty of Materials and Energy, Southwest University, Chongqing, 400715, China
| | - Gaobo Xu
- Faculty of Materials and Energy, Southwest University, Chongqing, 400715, China
| | - Xiaodie Chen
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Lan Cheng
- State Key Laboratory of Silkworm Genome, College of Sericulture, Textile and Biomass Sciences, Southwest University, Chongqing, 400715, China
| | - Feichi Zhou
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China.
| | - Shukai Duan
- College of Artificial Intelligence, Chongqing Key Laboratory of Brain-inspired Computing and Intelligent Chips, Key Laboratory of Luminescence Analysis and Molecular Sensors (Ministry of Education), Southwest University, Chongqing, 400715, China.
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14
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Zhang M, Lee Y, Zheng Z, Khan MTA, Lyu X, Byun J, Giessen H, Sitti M. Micro- and nanofabrication of dynamic hydrogels with multichannel information. Nat Commun 2023; 14:8208. [PMID: 38081820 PMCID: PMC10713606 DOI: 10.1038/s41467-023-43921-9] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/15/2023] [Accepted: 11/23/2023] [Indexed: 04/28/2024] Open
Abstract
Creating micro/nanostructures containing multi-channel information within responsive hydrogels presents exciting opportunities for dynamically changing functionalities. However, fabricating these structures is immensely challenging due to the soft and dynamic nature of hydrogels, often resulting in unintended structural deformations or destruction. Here, we demonstrate that dehydrated hydrogels, treated by a programmable femtosecond laser, can allow for a robust fabrication of micro/nanostructures. The dehydration enhances the rigidity of the hydrogels and temporarily locks the dynamic behaviours, significantly promoting their structural integrity during the fabrication process. By utilizing versatile dosage domains of the femtosecond laser, we create micro-grooves on the hydrogel surface through the use of a high-dosage mode, while also altering the fluorescent intensity within the rest of the non-ablated areas via a low-dosage laser. In this way, we rationally design a pixel unit containing three-channel information: structural color, polarization state, and fluorescent intensity, and encode three complex image information sets into these channels. Distinct images at the same location were simultaneously printed onto the hydrogel, which can be observed individually under different imaging modes without cross-talk. Notably, the recovered dynamic responsiveness of the hydrogel enables a multi-information-encoded surface that can sequentially display different information as the temperature changes.
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Affiliation(s)
- Mingchao Zhang
- Physical Intelligence Department, Max Planck Institute for Intelligent Systems, 70569, Stuttgart, Germany
| | - Yohan Lee
- 4th Physics Institute and Research Center SCoPE, University of Stuttgart, 70569, Stuttgart, Germany
| | - Zhiqiang Zheng
- Physical Intelligence Department, Max Planck Institute for Intelligent Systems, 70569, Stuttgart, Germany
| | - Muhammad Turab Ali Khan
- Physical Intelligence Department, Max Planck Institute for Intelligent Systems, 70569, Stuttgart, Germany
| | - Xianglong Lyu
- Physical Intelligence Department, Max Planck Institute for Intelligent Systems, 70569, Stuttgart, Germany
- Institute for Biomedical Engineering, ETH Zürich, 8092, Zürich, Switzerland
| | - Junghwan Byun
- Physical Intelligence Department, Max Planck Institute for Intelligent Systems, 70569, Stuttgart, Germany
| | - Harald Giessen
- 4th Physics Institute and Research Center SCoPE, University of Stuttgart, 70569, Stuttgart, Germany
| | - Metin Sitti
- Physical Intelligence Department, Max Planck Institute for Intelligent Systems, 70569, Stuttgart, Germany.
- Institute for Biomedical Engineering, ETH Zürich, 8092, Zürich, Switzerland.
- School of Medicine and College of Engineering, Koç University, 34450, Istanbul, Turkey.
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15
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Wang G, Yang B, Mei S, Wang B, Zhang Z, Mao Y, Guo J, Ma G, Guo R, Xing G. Persistent Charging of CsPbBr 3 Perovskite Nanocrystals Confined in Glass Matrix. Small 2023:e2307785. [PMID: 38054790 DOI: 10.1002/smll.202307785] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2023] [Revised: 11/09/2023] [Indexed: 12/07/2023]
Abstract
Manipulation of persistent charges in semiconductor nanostructure is the key point to obtain quantum bits towards the application of quantum memory and information devices. However, realizing persistent charge storage in semiconductor nano-systems is still very challenge due to the disturbance from crystal defects and environment conditions. Herein, the two-photon persistent charging induced long-lasting afterglow and charged exciton formation are observed in CsPbBr3 perovskite nanocrystals (NCs) confined in glass host with effective lifetime surpassing one second, where the glass inclosure provides effective protection. A method combining the femtosecond and second time-resolved transient absorption spectroscopy is explored to determine the persistent charging possibility of perovskite NCs unambiguously. Meanwhile, with temperature-dependent spectroscopy, the underlying mechanism of this persistent charging is elucidated. A two-channel carrier transfer model is proposed involving athermal quantum tunneling and slower thermal-assisted channel. On this basis, two different information storage devices are demonstrated with the memory time exceeding two hours under low-temperature condition. These results provide a new strategy to realize persistent charging in perovskite NCs and deepen the understanding of the underlying carrier kinetics, which may pave an alternative way towards novel information memory and optical data storage applications.
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Affiliation(s)
- Gang Wang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao, 999078, China
| | - Bobo Yang
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Shiliang Mei
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao, 999078, China
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Bingzhe Wang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao, 999078, China
| | - Zhipeng Zhang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao, 999078, China
| | - Yulin Mao
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao, 999078, China
| | - Jia Guo
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao, 999078, China
| | - Guohong Ma
- Department of Physics, Shanghai University, Shanghai, 200444, China
| | - Ruiqian Guo
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao, 999078, China
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16
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Ma Y, Yan Y, Luo L, Pazos S, Zhang C, Lv X, Chen M, Liu C, Wang Y, Chen A, Li Y, Zheng D, Lin R, Algaidi H, Sun M, Liu JZ, Tu S, Alshareef HN, Gong C, Lanza M, Xue F, Zhang X. High-performance van der Waals antiferroelectric CuCrP 2S 6-based memristors. Nat Commun 2023; 14:7891. [PMID: 38036500 PMCID: PMC10689492 DOI: 10.1038/s41467-023-43628-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/08/2023] [Accepted: 11/15/2023] [Indexed: 12/02/2023] Open
Abstract
Layered thio- and seleno-phosphate ferroelectrics, such as CuInP2S6, are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, the CuInP2S6-based memory devices suffer from poor thermal stability (<42 °C). Here, exploiting the electric field-driven phase transition in the rarely studied antiferroelectric CuCrP2S6 crystals, we develop a nonvolatile memristor showing a sizable resistive-switching ratio of ~ 1000, high switching endurance up to 20,000 cycles, low cycle-to-cycle variation, and robust thermal stability up to 120 °C. The resistive switching is attributed to the ferroelectric polarization-modulated thermal emission accompanied by the Fowler-Nordheim tunneling across the interfaces. First-principles calculations reveal that the good device performances are associated with the exceptionally strong ferroelectric polarization in CuCrP2S6 crystal. Furthermore, the typical biological synaptic learning rules, such as long-term potentiation/depression and spike amplitude/spike time-dependent plasticity, are also demonstrated. The results highlight the great application potential of van der Waals antiferroelectrics in high-performance synaptic devices for neuromorphic computing.
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Affiliation(s)
- Yinchang Ma
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yuan Yan
- Department of Mechanical Engineering, The University of Melbourne, Parkville, Vic, 3010, Australia
| | - Linqu Luo
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Sebastian Pazos
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Chenhui Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Xiang Lv
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, China
| | - Maolin Chen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Chen Liu
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yizhou Wang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Aitian Chen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yan Li
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Dongxing Zheng
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Rongyu Lin
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Hanin Algaidi
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Minglei Sun
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Jefferson Zhe Liu
- Department of Mechanical Engineering, The University of Melbourne, Parkville, Vic, 3010, Australia
| | - Shaobo Tu
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Husam N Alshareef
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Cheng Gong
- Department of Electrical and Computer Engineering and Quantum Technology Center, University of Maryland, College Park, MD, 20742, USA
| | - Mario Lanza
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Fei Xue
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou, 311215, China.
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia.
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17
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Shibata K, Nishioka D, Namiki W, Tsuchiya T, Higuchi T, Terabe K. Redox-based ion-gating reservoir consisting of (104) oriented LiCoO 2 film, assisted by physical masking. Sci Rep 2023; 13:21060. [PMID: 38030675 PMCID: PMC10687094 DOI: 10.1038/s41598-023-48135-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Accepted: 11/21/2023] [Indexed: 12/01/2023] Open
Abstract
Reservoir computing (RC) is a machine learning framework suitable for processing time series data, and is a computationally inexpensive and fast learning model. A physical reservoir is a hardware implementation of RC using a physical system, which is expected to become the social infrastructure of a data society that needs to process vast amounts of information. Ion-gating reservoirs (IGR) are compact and suitable for integration with various physical reservoirs, but the prediction accuracy and operating speed of redox-IGRs using WO3 as the channel are not sufficient due to irreversible Li+ trapping in the WO3 matrix during operation. Here, in order to enhance the computation performance of redox-IGRs, we developed a redox-based IGR using a (104) oriented LiCoO2 thin film with high electronic and ionic conductivity as a trap-free channel material. The subject IGR utilizes resistance change that is due to a redox reaction (LiCoO2 ⟺ Li1-xCoO2 + xLi+ + xe-) with the insertion and desertion of Li+. The prediction error in the subject IGR was reduced by 72% and the operation speed was increased by 4 times compared to the previously reported WO3, which changes are due to the nonlinear and reversible electrical response of LiCoO2 and the high dimensionality enhanced by a newly developed physical masking technique. This study has demonstrated the possibility of developing high-performance IGRs by utilizing materials with stronger nonlinearity and by increasing output dimensionality.
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Affiliation(s)
- Kaoru Shibata
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo, 125-8585, Japan
| | - Daiki Nishioka
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo, 125-8585, Japan
| | - Wataru Namiki
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Takashi Tsuchiya
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan.
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo, 125-8585, Japan.
| | - Tohru Higuchi
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo, 125-8585, Japan
| | - Kazuya Terabe
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
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18
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Liu S, Zeng J, Wu Z, Hu H, Xu A, Huang X, Chen W, Chen Q, Yu Z, Zhao Y, Wang R, Han T, Li C, Gao P, Kim H, Baik SJ, Zhang R, Zhang Z, Zhou P, Liu G. An ultrasmall organic synapse for neuromorphic computing. Nat Commun 2023; 14:7655. [PMID: 37996491 PMCID: PMC10667342 DOI: 10.1038/s41467-023-43542-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/28/2023] [Accepted: 11/13/2023] [Indexed: 11/25/2023] Open
Abstract
High-performance organic neuromorphic devices with miniaturized device size and computing capability are essential elements for developing brain-inspired humanoid intelligence technique. However, due to the structural inhomogeneity of most organic materials, downscaling of such devices to nanoscale and their high-density integration into compact matrices with reliable device performance remain challenging at the moment. Herein, based on the design of a semicrystalline polymer PBFCL10 with ordered structure to regulate dense and uniform formation of conductive nanofilaments, we realize an organic synapse with the smallest device dimension of 50 nm and highest integration size of 1 Kb reported thus far. The as-fabricated PBFCL10 synapses can switch between 32 conductance states linearly with a high cycle-to-cycle uniformity of 98.89% and device-to-device uniformity of 99.71%, which are the best results of organic devices. A mixed-signal neuromorphic hardware system based on the organic neuromatrix and FPGA controller is implemented to execute spiking-plasticity-related algorithm for decision-making tasks.
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Affiliation(s)
- Shuzhi Liu
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
- School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Jianmin Zeng
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Zhixin Wu
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Han Hu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Ao Xu
- School of Microelectronics, Hefei University of Technology, Hefei, 230601, China
| | - Xiaohe Huang
- State Key Laboratory of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Weilin Chen
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Qilai Chen
- School of Materials, Sun Yat-Sen University, Guangzhou, Guangdong, 510275, China
| | - Zhe Yu
- School of Materials, Sun Yat-Sen University, Guangzhou, Guangdong, 510275, China
| | - Yinyu Zhao
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Rong Wang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Tingting Han
- School of Microelectronics, Hefei University of Technology, Hefei, 230601, China
| | - Chao Li
- School of Microelectronics, Hefei University of Technology, Hefei, 230601, China
| | - Pingqi Gao
- School of Materials, Sun Yat-Sen University, Guangzhou, Guangdong, 510275, China
| | - Hyunwoo Kim
- School of Electronic and Electrical Engineering, Hankyong National University, Anseong-si, Gyeonggi-do, 17579, Korea
| | - Seung Jae Baik
- School of Electronic and Electrical Engineering, Hankyong National University, Anseong-si, Gyeonggi-do, 17579, Korea
| | - Ruoyu Zhang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China.
| | - Zhang Zhang
- School of Microelectronics, Hefei University of Technology, Hefei, 230601, China.
| | - Peng Zhou
- State Key Laboratory of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai, 200433, China.
| | - Gang Liu
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.
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19
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Antonacci Y, Barà C, Zaccaro A, Ferri F, Pernice R, Faes L. Time-varying information measures: an adaptive estimation of information storage with application to brain-heart interactions. Front Netw Physiol 2023; 3:1242505. [PMID: 37920446 PMCID: PMC10619917 DOI: 10.3389/fnetp.2023.1242505] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/19/2023] [Accepted: 10/02/2023] [Indexed: 11/04/2023]
Abstract
Network Physiology is a rapidly growing field of study that aims to understand how physiological systems interact to maintain health. Within the information theory framework the information storage (IS) allows to measure the regularity and predictability of a dynamic process under stationarity assumption. However, this assumption does not allow to track over time the transient pathways occurring in the dynamical activity of a physiological system. To address this limitation, we propose a time-varying approach based on the recursive least squares algorithm (RLS) for estimating IS at each time instant, in non-stationary conditions. We tested this approach in simulated time-varying dynamics and in the analysis of electroencephalographic (EEG) signals recorded from healthy volunteers and timed with the heartbeat to investigate brain-heart interactions. In simulations, we show that the proposed approach allows to track both abrupt and slow changes in the information stored in a physiological system. These changes are reflected in its evolution and variability over time. The analysis of brain-heart interactions reveals marked differences across the cardiac cycle phases of the variability of the time-varying IS. On the other hand, the average IS values exhibit a weak modulation over parieto-occiptal areas of the scalp. Our study highlights the importance of developing more advanced methods for measuring IS that account for non-stationarity in physiological systems. The proposed time-varying approach based on RLS represents a useful tool for identifying spatio-temporal dynamics within the neurocardiac system and can contribute to the understanding of brain-heart interactions.
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Affiliation(s)
- Yuri Antonacci
- Department of Engineering, University of Palermo, Palermo, Italy
| | - Chiara Barà
- Department of Engineering, University of Palermo, Palermo, Italy
| | - Andrea Zaccaro
- Department of Neuroscience, Imaging and Clinical Sciences, “G. d’Annunzio” University of Chieti-Pescara, Chieti, Italy
| | - Francesca Ferri
- Department of Neuroscience, Imaging and Clinical Sciences, “G. d’Annunzio” University of Chieti-Pescara, Chieti, Italy
- Institute for Advanced Biomedical Technologies (ITAB), “G. d’Annunzio” University of Chieti-Pescara, Chieti, Italy
| | - Riccardo Pernice
- Department of Engineering, University of Palermo, Palermo, Italy
| | - Luca Faes
- Department of Engineering, University of Palermo, Palermo, Italy
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20
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Zhang M, Pal A, Zheng Z, Gardi G, Yildiz E, Sitti M. Hydrogel muscles powering reconfigurable micro-metastructures with wide-spectrum programmability. Nat Mater 2023; 22:1243-1252. [PMID: 37604911 PMCID: PMC10533409 DOI: 10.1038/s41563-023-01649-3] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2022] [Accepted: 07/20/2023] [Indexed: 08/23/2023]
Abstract
Stimuli-responsive geometric transformations endow metamaterials with dynamic properties and functionalities. However, using existing transformation mechanisms to program a single geometry to transform into diverse final configurations remains challenging, imposing crucial design restrictions on achieving versatile functionalities. Here, we present a programmable strategy for wide-spectrum reconfigurable micro-metastructures using linearly responsive transparent hydrogels as artificial muscles. Actuated by the hydrogel, the transformation of micro-metastructures arises from the collaborative buckling of their building blocks. Rationally designing the three-dimensional printing parameters and geometry features of the metastructures enables their locally isotropic or anisotropic deformation, allowing controllable wide-spectrum pattern transformation with programmable chirality and optical anisotropy. This reconfiguration mechanism can be applied to various materials with a wide range of mechanical properties. Our strategy enables a thermally reconfigurable printed metalattice with pixel-by-pixel mapping of different printing powers and angles for displaying or hiding complex information, providing opportunities for encryption, miniature robotics, photonics and phononics applications.
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Affiliation(s)
- Mingchao Zhang
- Physical Intelligence Department, Max Planck Institute for Intelligent Systems, Stuttgart, Germany
| | - Aniket Pal
- Physical Intelligence Department, Max Planck Institute for Intelligent Systems, Stuttgart, Germany
| | - Zhiqiang Zheng
- Physical Intelligence Department, Max Planck Institute for Intelligent Systems, Stuttgart, Germany
| | - Gaurav Gardi
- Physical Intelligence Department, Max Planck Institute for Intelligent Systems, Stuttgart, Germany
| | - Erdost Yildiz
- Physical Intelligence Department, Max Planck Institute for Intelligent Systems, Stuttgart, Germany
| | - Metin Sitti
- Physical Intelligence Department, Max Planck Institute for Intelligent Systems, Stuttgart, Germany.
- Institute for Biomedical Engineering, ETH Zürich, Zürich, Switzerland.
- School of Medicine and College of Engineering, Koç University, Istanbul, Turkey.
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21
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Liang Y, Yi D, Nan T, Liu S, Zhao L, Zhang Y, Chen H, Xu T, Dai M, Hu JM, Xu B, Shi J, Jiang W, Yu R, Lin YH. Field-free spin-orbit switching of perpendicular magnetization enabled by dislocation-induced in-plane symmetry breaking. Nat Commun 2023; 14:5458. [PMID: 37673896 PMCID: PMC10482861 DOI: 10.1038/s41467-023-41163-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/10/2022] [Accepted: 08/25/2023] [Indexed: 09/08/2023] Open
Abstract
Current induced spin-orbit torque (SOT) holds great promise for next generation magnetic-memory technology. Field-free SOT switching of perpendicular magnetization requires the breaking of in-plane symmetry, which can be artificially introduced by external magnetic field, exchange coupling or device asymmetry. Recently it has been shown that the exploitation of inherent crystal symmetry offers a simple and potentially efficient route towards field-free switching. However, applying this approach to the benchmark SOT materials such as ferromagnets and heavy metals is challenging. Here, we present a strategy to break the in-plane symmetry of Pt/Co heterostructures by designing the orientation of Burgers vectors of dislocations. We show that the lattice of Pt/Co is tilted by about 1.2° when the Burgers vector has an out-of-plane component. Consequently, a tilted magnetic easy axis is induced and can be tuned from nearly in-plane to out-of-plane, enabling the field-free SOT switching of perpendicular magnetization components at room temperature with a relatively low current density (~1011 A/m2) and excellent stability (> 104 cycles). This strategy is expected to be applicable to engineer a wide range of symmetry-related functionalities for future electronic and magnetic devices.
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Affiliation(s)
- Yuhan Liang
- School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Di Yi
- School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Tianxiang Nan
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Shengsheng Liu
- School of Materials Science and Engineering, Tsinghua University, Beijing, China
- National Center for Electron Microscopy in Beijing, Tsinghua University, Beijing, China
| | - Le Zhao
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing, China
| | - Yujun Zhang
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, China
| | - Hetian Chen
- School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Teng Xu
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing, China
| | - Minyi Dai
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, USA
| | - Jia-Mian Hu
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, USA
| | - Ben Xu
- Graduate School, China Academy of Engineering Physics, Beijing, China
| | - Ji Shi
- School of Materials and Chemical Technology, Tokyo Institute of Technology, Tokyo, Japan
| | - Wanjun Jiang
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China.
- Frontier Science Center for Quantum Information, Tsinghua University, Beijing, China.
| | - Rong Yu
- School of Materials Science and Engineering, Tsinghua University, Beijing, China.
- National Center for Electron Microscopy in Beijing, Tsinghua University, Beijing, China.
| | - Yuan-Hua Lin
- School of Materials Science and Engineering, Tsinghua University, Beijing, China.
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22
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Zhu R, Liang H, Liu S, Yuan Y, Wang X, Ling FCC, Kuznetsov A, Zhang G, Mei Z. Non-volatile optoelectronic memory based on a photosensitive dielectric. Nat Commun 2023; 14:5396. [PMID: 37669944 PMCID: PMC10480167 DOI: 10.1038/s41467-023-40938-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/07/2023] [Accepted: 08/15/2023] [Indexed: 09/07/2023] Open
Abstract
Recently, the optoelectronic memory is capturing growing attention due to its integrated function of sense and memory as well as multilevel storage ability. Although tens of states have been reported in literature, there are still three obvious deficiencies in most of the optoelectronic memories: large programming voltage (>20 V), high optical power density (>1 mW cm-2), and poor compatibility originating from the over-reliance on channel materials. Here, we firstly propose an optoelectronic memory based on a new photosensitive dielectric (PSD) architecture. Data writing and erasing are realized by using an optical pulse to switch on the PSD. The unique design enables the memory to work with a programming voltage and optical power density as low as 4 V and 160 µW cm-2, respectively. Meanwhile, this device may be extended to different kinds of transistors for specific applications. Our discovery offers a brand-new direction for non-volatile optoelectronic memories with low energy consumption.
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Affiliation(s)
- Rui Zhu
- Songshan Lake Materials Laboratory, 523808, Dongguan, Guangdong, P. R. China.
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, P. R. China.
| | - Huili Liang
- Songshan Lake Materials Laboratory, 523808, Dongguan, Guangdong, P. R. China
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, P. R. China
| | - Shangfeng Liu
- Songshan Lake Materials Laboratory, 523808, Dongguan, Guangdong, P. R. China
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, P. R. China
| | - Ye Yuan
- Songshan Lake Materials Laboratory, 523808, Dongguan, Guangdong, P. R. China
| | - Xinqiang Wang
- Songshan Lake Materials Laboratory, 523808, Dongguan, Guangdong, P. R. China
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, P. R. China
| | | | - Andrej Kuznetsov
- Department of Physics, University of Oslo, P.O. Box 1048, Oslo, NO-0316, Norway
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, 523808, Dongguan, Guangdong, P. R. China
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, P. R. China
| | - Zengxia Mei
- Songshan Lake Materials Laboratory, 523808, Dongguan, Guangdong, P. R. China.
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, P. R. China.
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23
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Kim H, Seo J, Cho S, Jeon S, Woo J, Lee D. Three-dimensional vertical structural electrochemical random access memory for high-density integrated synapse device. Sci Rep 2023; 13:14325. [PMID: 37652919 PMCID: PMC10471571 DOI: 10.1038/s41598-023-41202-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/10/2023] [Accepted: 08/23/2023] [Indexed: 09/02/2023] Open
Abstract
Three-terminal (3T) structured electrochemical random access memory (ECRAM) has been proposed as a synaptic device based on improved synaptic characteristics. However, the proposed 3T ECRAM has a larger area requirement than 2T synaptic devices; thereby limiting integration density. To overcome this limitation, this study presents the development of a high-density vertical structure for the 3T ECRAM. In addition, complementary metal-oxide semiconductor (CMOS)-compatible materials and 8-inch wafer-based CMOS fabrication processes were utilized to verify the feasibility of mass production. The achievements of this work demonstrate the potential for high-density integration and mass production of 3T ECRAM devices.
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Affiliation(s)
- Hyejin Kim
- Department of Electronic Materials Engineering, Kwangwoon University, Seoul, 01897, Republic of Korea
| | - Jongseon Seo
- Department of Electronic Materials Engineering, Kwangwoon University, Seoul, 01897, Republic of Korea
| | - Seojin Cho
- Department of Electronic Materials Engineering, Kwangwoon University, Seoul, 01897, Republic of Korea
| | - Seonuk Jeon
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, 41566, South Korea
| | - Jiyong Woo
- School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, 41566, South Korea
| | - Daeseok Lee
- Department of Electronic Materials Engineering, Kwangwoon University, Seoul, 01897, Republic of Korea.
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24
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Kuznetsova I, Lebedeva O, Kultin D, Perova N, Kalmykov K, Chernavskii P, Perov N, Kustov L. Is a 2D Nanostructured Surface Capable of Changing the Corrosion and Magnetic Properties of an Amorphous Alloy? Int J Mol Sci 2023; 24:13373. [PMID: 37686187 PMCID: PMC10488001 DOI: 10.3390/ijms241713373] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/29/2023] [Revised: 08/24/2023] [Accepted: 08/28/2023] [Indexed: 09/10/2023] Open
Abstract
In this work, an attempt was made to reveal and explain the influence of the process of formation of 2D nanostructures at the surface of an amorphous alloy (an alloy with the composition Co75Si15Fe5Cr4.5Al0.5 (in at.%) was used for this purpose) on the corrosion and magnetic properties of such an alloy. Two-dimensional nanostructures (nanocells of 100-150 nm in size, which were obtained by anodizing the initial sample in an ionic liquid) are essentially a pattern on the surface of the sample, and they cannot completely cover and block the surface from external effects. It was postulated that the presence of these nanostructures during corrosion and magnetic tests has no significant effect. However, a noticeable inhibition effect was observed during corrosion tests and a less noticeable (but still detectable) effect was observed during magnetic tests. The authors believe that the effect obtained, with a detailed study, can be used to increase the corrosion resistance and to improve the properties of traditional magnetic materials.
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Affiliation(s)
- Irina Kuznetsova
- Department of Chemistry, Lomonosov Moscow State University, 119991 Moscow, Russia; (I.K.); (D.K.); (K.K.); (P.C.)
| | - Olga Lebedeva
- Department of Chemistry, Lomonosov Moscow State University, 119991 Moscow, Russia; (I.K.); (D.K.); (K.K.); (P.C.)
| | - Dmitry Kultin
- Department of Chemistry, Lomonosov Moscow State University, 119991 Moscow, Russia; (I.K.); (D.K.); (K.K.); (P.C.)
| | - Natalia Perova
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia; (N.P.); (N.P.)
| | - Konstantin Kalmykov
- Department of Chemistry, Lomonosov Moscow State University, 119991 Moscow, Russia; (I.K.); (D.K.); (K.K.); (P.C.)
| | - Petr Chernavskii
- Department of Chemistry, Lomonosov Moscow State University, 119991 Moscow, Russia; (I.K.); (D.K.); (K.K.); (P.C.)
| | - Nikolai Perov
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia; (N.P.); (N.P.)
| | - Leonid Kustov
- Department of Chemistry, Lomonosov Moscow State University, 119991 Moscow, Russia; (I.K.); (D.K.); (K.K.); (P.C.)
- N.D. Zelinsky Institute of Organic Chemistry, Russian Academy of Sciences, Leninsky Prospect 47, 119991 Moscow, Russia
- Institute of Ecology and Engineering, National Science and Technology University “MISiS”, Leninsky Prospect 4, 119049 Moscow, Russia
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25
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Gao K, Li W, Wang X, Sun S, Zhang B. Fabrication of AIE Polymer-Functionalized Reduced Graphene Oxide for Information Storage. Molecules 2023; 28:6271. [PMID: 37687100 PMCID: PMC10488735 DOI: 10.3390/molecules28176271] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/07/2023] [Revised: 08/25/2023] [Accepted: 08/26/2023] [Indexed: 09/10/2023] Open
Abstract
Reduced graphene oxide (RGO) has been extensively studied and applied in optoelectronic systems, but its unstable dispersion in organic solvents has limited its application. To overcome this problem, the newly designed and developed aggregation-induced emission (AIE) material poly[(9,9-bis(6-azidohexyl)-9H-fluorene)-alt-(9-(4-(1,2,2-triphenylvinyl)phenyl)-9H-carbazole)] (PAFTC) was covalently grafted onto RGO to produce (PFTC-g-RGO). The solubility of two-dimensional graphene was improved by incorporating it into the backbone of PAFTC to form new functional materials. In resistive random access memory (RRAM) devices, PFTC-g-RGO was used as the active layer material after it was characterized. The fabricated Al/PFTC-g-RGO/ITO device exhibited nonvolatile bistable resistive switching performances with a long retention time of over 104 s, excellent endurance of over 200 switching cycles, and an impressively low turn-ON voltage. This study provides important insights into the future development of AIE polymer-functionalized nanomaterials for information storage.
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Affiliation(s)
- Kai Gao
- Sinopec Shanghai Research Institute of Petrochemical Technology, Shanghai 201208, China
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, China
| | - Wei Li
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, China
| | - Xiaoyang Wang
- Guangxi Key Laboratory of Information Material, Engineering Research Center of Electronic Information Materials and Devices, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Sai Sun
- Sinopec Shanghai Research Institute of Petrochemical Technology, Shanghai 201208, China
| | - Bin Zhang
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, China
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26
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Im T, Song SK, Park JW, Yeom HW. Topological soliton molecule in quasi 1D charge density wave. Nat Commun 2023; 14:5085. [PMID: 37607969 PMCID: PMC10444770 DOI: 10.1038/s41467-023-40834-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/24/2022] [Accepted: 08/11/2023] [Indexed: 08/24/2023] Open
Abstract
Soliton molecules, bound states of two solitons, can be important for the informatics using solitons and the quest for exotic particles in a wide range of physical systems from unconventional superconductors to nuclear matter and Higgs field, but have been observed only in temporal dimension for classical wave optical systems. Here, we identify a topological soliton molecule formed spatially in an electronic system, a quasi 1D charge density wave of indium atomic wires. This system is composed of two coupled Peierls chains, which are endowed with a Z4 topology and three distinct, right-chiral, left-chiral, and non-chiral, solitons. Our scanning tunneling microscopy measurements identify a bound state of right- and left-chiral solitons with distinct in-gap states and net zero phase shift. Our density functional theory calculations reveal the attractive interaction of these solitons and the hybridization of their electronic states. This result initiates the study of the interaction between solitons in electronic systems, which can provide novel manybody electronic states and extra data-handling capacity beyond the given soliton topology.
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Affiliation(s)
- Taehwan Im
- Center for Artificial Low Dimensional Electronic System, Institute for Basic Science, Pohang, Korea
- Department of Physics, Pohang University of Science and Technology, Pohang, Korea
| | - Sun Kyu Song
- Center for Artificial Low Dimensional Electronic System, Institute for Basic Science, Pohang, Korea
| | - Jae Whan Park
- Center for Artificial Low Dimensional Electronic System, Institute for Basic Science, Pohang, Korea
| | - Han Woong Yeom
- Center for Artificial Low Dimensional Electronic System, Institute for Basic Science, Pohang, Korea.
- Department of Physics, Pohang University of Science and Technology, Pohang, Korea.
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27
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Haley SC, Maniv E, Wu S, Cookmeyer T, Torres-Londono S, Aravinth M, Maksimovic N, Moore J, Birgeneau RJ, Analytis JG. Long-range, non-local switching of spin textures in a frustrated antiferromagnet. Nat Commun 2023; 14:4691. [PMID: 37542056 PMCID: PMC10403493 DOI: 10.1038/s41467-023-39883-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/18/2022] [Accepted: 07/03/2023] [Indexed: 08/06/2023] Open
Abstract
Antiferromagnetic spintronics is an emerging area of quantum technologies that leverage the coupling between spin and orbital degrees of freedom in exotic materials. Spin-orbit interactions allow spin or angular momentum to be injected via electrical stimuli to manipulate the spin texture of a material, enabling the storage of information and energy. In general, the physical process is intrinsically local: spin is carried by an electrical current, imparted into the magnetic system, and the spin texture will then rotate in the region of current flow. In this study, we show that spin information can be transported and stored "non-locally" in the material FexNbS2. We propose that collective modes can manipulate the spin texture away from the flowing current, an effect amplified by strong magnetoelastic coupling of the ordered state. This suggests a novel way to store and transport spin information in strongly spin-orbit coupled magnetic systems.
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Affiliation(s)
- Shannon C Haley
- Department of Physics, University of California, Berkeley, CA, 94720, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
| | - Eran Maniv
- Department of Physics, Ben-Gurion University of the Negev, Beer-Sheva, 84105, Israel
| | - Shan Wu
- Department of Physics, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Tessa Cookmeyer
- Department of Physics, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | | | - Meera Aravinth
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Nikola Maksimovic
- Department of Physics, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Joel Moore
- Department of Physics, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Robert J Birgeneau
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - James G Analytis
- Department of Physics, University of California, Berkeley, CA, 94720, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
- CIFAR Quantum Materials, CIFAR, Toronto, ON, M5G 1M1, Canada.
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28
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Wang S, Wu L, Li H, Zhang G, Wei X, Zheng J, Jiang L, Ju P, Qu F, Zhang E. A Cu 2+ triggered reversible photochromic system: the structure photochromic response relationship study and potential applications. R Soc Open Sci 2023; 10:230121. [PMID: 37293366 PMCID: PMC10245203 DOI: 10.1098/rsos.230121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/11/2023] [Accepted: 04/17/2023] [Indexed: 06/10/2023]
Abstract
Fifteen rhodamine B hydrazide hydrazone (RhBHH) derivatives (compounds a-o) with various substituent groups at different position and their photochromic property triggered by Cu2+ were studied to illustrate the structure photochromic response relationship (SPRR). Three of them (compounds f-h) with a para-position hydroxyl group and two meta-position halogen substituents display Cu2+-triggered photochromic which is significantly different from the previous reports. It was found that halogen atoms, which were generally considered to have no remarkable regulation effect, exhibited great influences on the photochromic behaviour of RhBHH derivatives. Detail photochromic properties of the developed photochromic system were revealed by using compound g as the model substrate, and only Cu2+ displayed high selective trigger effect. Good reversible photochromic phenomenon was observed after stimulated with visible light irradiation and dark (or heat) bleaching consecutively. Furthermore, this photochromic system could be used in the preparation of photochromic glass, special security ink, molecular logic gate and two-dimensional code for security information storage.
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Affiliation(s)
- Shuping Wang
- College of Chemistry and Chemical Engineering, Qufu Normal University, Qufu, Shandong 273165, People's Republic of China
| | - Lumiao Wu
- College of Chemistry and Chemical Engineering, Qufu Normal University, Qufu, Shandong 273165, People's Republic of China
| | - He Li
- College of Chemistry and Chemical Engineering, Qufu Normal University, Qufu, Shandong 273165, People's Republic of China
| | - Guoyan Zhang
- College of Chemistry and Chemical Engineering, Qufu Normal University, Qufu, Shandong 273165, People's Republic of China
| | - Xueqian Wei
- College of Chemistry and Chemical Engineering, Qufu Normal University, Qufu, Shandong 273165, People's Republic of China
| | - Jiyi Zheng
- College of Chemistry and Chemical Engineering, Qufu Normal University, Qufu, Shandong 273165, People's Republic of China
| | - Long Jiang
- Instrumental Analysis & Research Center, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Ping Ju
- College of Chemistry and Chemical Engineering, Qufu Normal University, Qufu, Shandong 273165, People's Republic of China
| | - Fengli Qu
- College of Chemistry and Chemical Engineering, Qufu Normal University, Qufu, Shandong 273165, People's Republic of China
| | - Ensheng Zhang
- College of Chemistry and Chemical Engineering, Qufu Normal University, Qufu, Shandong 273165, People's Republic of China
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29
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Yang R, Yang D, Wang M, Zhang F, Ji X, Zhang M, Jia M, Chen X, Wu D, Li XJ, Zhang Y, Shi Z, Shan C. High-Efficiency and Stable Long-Persistent Luminescence from Undoped Cesium Cadmium Chlorine Crystals Induced by Intrinsic Point Defects. Adv Sci (Weinh) 2023; 10:e2207331. [PMID: 36825674 DOI: 10.1002/advs.202207331] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/10/2022] [Revised: 02/11/2023] [Indexed: 05/27/2023]
Abstract
Application of long-persistent luminescence (LPL) materials in many technological fields is in the spotlight. However, the exploration of undoped persistent luminescent materials with high emission efficiency, robust stability, and long persistent duration remains challenging. Here, inorganic cesium cadmium chlorine (CsCdCl3 ) is developed, featuring remarkable LPL characteristics at room temperature, which is synthesized by a facile hydrothermal method. Excited by ultraviolet light, the CsCdCl3 crystals exhibit an intense yellow emission with a large photoluminescence quantum yield of ≈90%. Different from the reported systems with lanthanides or transition metals doping, the CsCdCl3 crystals without dopants perform yellow LPL with a long duration of 6000 s. Joint experiment-theory characterizations reveal the intrinsic point defects of CsCdCl3 act as the trap centers of excited electrons and the carrier de-trapping process from such trap sites to localized emission centers contributes to the LPL. Encouraged by the attractive fluorescence and persistent luminescence as well as good stability of CsCdCl3 against environment oxygen/moisture (75%), heat (100 °C for 10 h), and ultraviolet light irradiation, an effective dual-mode information storage-reading application is demonstrated. The results open up a new frontier for exploring LPL materials without dopants and provide an opportunity for advanced information storage compatible for practical applications.
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Affiliation(s)
- Ruoting Yang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Dongwen Yang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Meng Wang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Fei Zhang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Xinzhen Ji
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Mengyao Zhang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Mochen Jia
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Xu Chen
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Di Wu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Xin Jian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Yu Zhang
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun, 130012, P. R. China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Chongxin Shan
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
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30
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Golovchak R, Plummer J, Kovalskiy A, Holovchak Y, Ignatova T, Trofe A, Mahlovanyi B, Cebulski J, Krzeminski P, Shpotyuk Y, Boussard-Pledel C, Bureau B. Phase-change materials based on amorphous equichalcogenides. Sci Rep 2023; 13:2881. [PMID: 36801904 DOI: 10.1038/s41598-023-30160-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Accepted: 02/16/2023] [Indexed: 02/20/2023] Open
Abstract
Phase-change materials, demonstrating a rapid switching between two distinct states with a sharp contrast in electrical, optical or magnetic properties, are vital for modern photonic and electronic devices. To date, this effect is observed in chalcogenide compounds based on Se, Te or both, and most recently in stoichiometric Sb2S3 composition. Yet, to achieve best integrability into modern photonics and electronics, the mixed S/Se/Te phase change medium is needed, which would allow a wide tuning range for such important physical properties as vitreous phase stability, radiation and photo-sensitivity, optical gap, electrical and thermal conductivity, non-linear optical effects, as well as the possibility of structural modification at nanoscale. In this work, a thermally-induced high-to-low resistivity switching below 200 °C is demonstrated in Sb-rich equichalcogenides (containing S, Se and Te in equal proportions). The nanoscale mechanism is associated with interchange between tetrahedral and octahedral coordination of Ge and Sb atoms, substitution of Te in the nearest Ge environment by S or Se, and Sb-Ge/Sb bonds formation upon further annealing. The material can be integrated into chalcogenide-based multifunctional platforms, neuromorphic computational systems, photonic devices and sensors.
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31
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Wang X, Shang Z, Zhang C, Kang J, Liu T, Wang X, Chen S, Liu H, Tang W, Zeng YJ, Guo J, Cheng Z, Liu L, Pan D, Tong S, Wu B, Xie Y, Wang G, Deng J, Zhai T, Deng HX, Hong J, Zhao J. Electrical and magnetic anisotropies in van der Waals multiferroic CuCrP 2S 6. Nat Commun 2023; 14:840. [PMID: 36792610 PMCID: PMC9931707 DOI: 10.1038/s41467-023-36512-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Accepted: 02/06/2023] [Indexed: 02/17/2023] Open
Abstract
Multiferroic materials have great potential in non-volatile devices for low-power and ultra-high density information storage, owing to their unique characteristic of coexisting ferroelectric and ferromagnetic orders. The effective manipulation of their intrinsic anisotropy makes it promising to control multiple degrees of the storage "medium". Here, we have discovered intriguing in-plane electrical and magnetic anisotropies in van der Waals (vdW) multiferroic CuCrP2S6. The uniaxial anisotropies of current rectifications, magnetic properties and magnon modes are demonstrated and manipulated by electric direction/polarity, temperature variation and magnetic field. More important, we have discovered the spin-flop transition corresponding to specific resonance modes, and determined the anisotropy parameters by consistent model fittings and theoretical calculations. Our work provides in-depth investigation and quantitative analysis of electrical and magnetic anisotropies with the same easy axis in vdW multiferroics, which will stimulate potential device applications of artificial bionic synapses, multi-terminal spintronic chips and magnetoelectric devices.
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Affiliation(s)
- Xiaolei Wang
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, China.
| | - Zixuan Shang
- grid.28703.3e0000 0000 9040 3743Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124 China
| | - Chen Zhang
- grid.9227.e0000000119573309State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China
| | - Jiaqian Kang
- grid.43555.320000 0000 8841 6246School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081 China
| | - Tao Liu
- grid.54549.390000 0004 0369 4060National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, 610054 China
| | - Xueyun Wang
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China.
| | - Siliang Chen
- grid.19373.3f0000 0001 0193 3564Guangdong Provincial Key Laboratory of Semiconductor, Optoelectronic Materials and Intelligent Photonic Systems, School of Science, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055 China
| | - Haoliang Liu
- Guangdong Provincial Key Laboratory of Semiconductor, Optoelectronic Materials and Intelligent Photonic Systems, School of Science, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China.
| | - Wei Tang
- grid.263488.30000 0001 0472 9649Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060 China
| | - Yu-Jia Zeng
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
| | - Jianfeng Guo
- grid.24539.390000 0004 0368 8103Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing, 100872 China
| | - Zhihai Cheng
- grid.24539.390000 0004 0368 8103Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing, 100872 China
| | - Lei Liu
- grid.9227.e0000000119573309State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China
| | - Dong Pan
- grid.9227.e0000000119573309State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China
| | - Shucheng Tong
- grid.9227.e0000000119573309State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China
| | - Bo Wu
- grid.28703.3e0000 0000 9040 3743Key Laboratory of Optoelectronics Technology Ministry of Education, Beijing University of Technology, Beijing, 100124 China
| | - Yiyang Xie
- grid.28703.3e0000 0000 9040 3743Key Laboratory of Optoelectronics Technology Ministry of Education, Beijing University of Technology, Beijing, 100124 China
| | - Guangcheng Wang
- grid.28703.3e0000 0000 9040 3743Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124 China
| | - Jinxiang Deng
- grid.28703.3e0000 0000 9040 3743Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124 China
| | - Tianrui Zhai
- grid.28703.3e0000 0000 9040 3743Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124 China
| | - Hui-Xiong Deng
- grid.9227.e0000000119573309State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China
| | - Jiawang Hong
- grid.43555.320000 0000 8841 6246School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081 China
| | - Jianhua Zhao
- grid.9227.e0000000119573309State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China
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32
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Kim IJ, Kim MK, Lee JS. Highly-scaled and fully-integrated 3-dimensional ferroelectric transistor array for hardware implementation of neural networks. Nat Commun 2023; 14:504. [PMID: 36720868 DOI: 10.1038/s41467-023-36270-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/20/2022] [Accepted: 01/20/2023] [Indexed: 02/02/2023] Open
Abstract
Hardware-based neural networks (NNs) can provide a significant breakthrough in artificial intelligence applications due to their ability to extract features from unstructured data and learn from them. However, realizing complex NN models remains challenging because different tasks, such as feature extraction and classification, should be performed at different memory elements and arrays. This further increases the required number of memory arrays and chip size. Here, we propose a three-dimensional ferroelectric NAND (3D FeNAND) array for the area-efficient hardware implementation of NNs. Vector-matrix multiplication is successfully demonstrated using the integrated 3D FeNAND arrays, and excellent pattern classification is achieved. By allocating each array of vertical layers in 3D FeNAND as the hidden layer of NN, each layer can be used to perform different tasks, and the classification of color-mixed patterns is achieved. This work provides a practical strategy to realize high-performance and highly efficient NN systems by stacking computation components vertically.
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33
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Li W, Wang X, Zhang B, Chen Y. In Situ Modification of Multi-Walled Carbon Nanotubes with Polythiophene-Based Conjugated Polymer for Information Storage. Materials (Basel) 2023; 16:908. [PMID: 36769915 PMCID: PMC9918207 DOI: 10.3390/ma16030908] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/19/2022] [Revised: 01/08/2023] [Accepted: 01/16/2023] [Indexed: 06/18/2023]
Abstract
One-dimensional multi-walled carbon nanotubes (MWNTs) have unique electrical properties, but they are not solution-processable, which severely limits their applications in microelectronic devices. Therefore, it is of great significance to improve the solubility of MWNTs and endow them with new functions by chemical modification. In this work, MWNTs were in situ functionalized with poly[(1,4-diethynyl-benzene)-alt-(3-hexylthiophene)] (PDHT) via Sonogashira-Hagihara polymerization. The obtained material PDHT-g-MWNTs was soluble in conventional organic solvents. By sandwiching a PDHT-g-MWNTs film between Al and ITO electrodes, the fabricated Al/PDHT-g-MWNTs/ITO electronic device exhibited nonvolatile rewritable memory behavior, with highly symmetrical turn-on/off voltages, a retention time of over 104 s, and durability for 200 switching cycles. These findings provide important insights into the development of carbon nanotube-based materials for information storage.
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Affiliation(s)
- Wei Li
- Key Laboratory for Advanced Materials, Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, China
| | - Xiaoyang Wang
- Guangxi Key Laboratory of Information Material, Engineering Research Center of Electronic Information Materials and Devices, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Bin Zhang
- Key Laboratory for Advanced Materials, Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, China
| | - Yu Chen
- Key Laboratory for Advanced Materials, Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, China
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34
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Girich A, Nedukh S, Polevoy S, Sova K, Tarapov S, Vakula A. Enhancement of the microwave photon-magnon coupling strength for a planar fabricated resonator. Sci Rep 2023; 13:924. [PMID: 36650193 DOI: 10.1038/s41598-022-27285-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/10/2022] [Accepted: 12/29/2022] [Indexed: 01/19/2023] Open
Abstract
Planar resonators have a wide usage in modern microwave technologies and perspectives in novel quantum technologies development. As was demonstrated earlier, their utilization allows to achieve high values of microwave photon-magnon coupling strength-an important parameter in technologies of information coherent transfer from electromagnetic GHz range to the optical range. In the present work, the achievement of the high value of the microwave photon-magnon coupling strength by exploiting the increase of the spatial concentration of the magnetic component of the planar resonator electromagnetic field is reported. Starting from the conventional planar split-ring resonator design we increased the coupling strength up to 40% by modifying the resonator shape. The numerical simulation and experimental verification showed a predicted increase in the spatial concentration of the microwave magnetic component and showed the increased value of the microwave photon-magnon coupling strength as a sequence.
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35
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Chen X, Higo T, Tanaka K, Nomoto T, Tsai H, Idzuchi H, Shiga M, Sakamoto S, Ando R, Kosaki H, Matsuo T, Nishio-Hamane D, Arita R, Miwa S, Nakatsuji S. Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction. Nature 2023; 613:490-495. [PMID: 36653566 PMCID: PMC9849134 DOI: 10.1038/s41586-022-05463-w] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/11/2022] [Accepted: 10/19/2022] [Indexed: 01/19/2023]
Abstract
The tunnelling electric current passing through a magnetic tunnel junction (MTJ) is strongly dependent on the relative orientation of magnetizations in ferromagnetic electrodes sandwiching an insulating barrier, rendering efficient readout of spintronics devices1-5. Thus, tunnelling magnetoresistance (TMR) is considered to be proportional to spin polarization at the interface1 and, to date, has been studied primarily in ferromagnets. Here we report observation of TMR in an all-antiferromagnetic tunnel junction consisting of Mn3Sn/MgO/Mn3Sn (ref. 6). We measured a TMR ratio of around 2% at room temperature, which arises between the parallel and antiparallel configurations of the cluster magnetic octupoles in the chiral antiferromagnetic state. Moreover, we carried out measurements using a Fe/MgO/Mn3Sn MTJ and show that the sign and direction of anisotropic longitudinal spin-polarized current in the antiferromagnet7 can be controlled by octupole direction. Strikingly, the TMR ratio (about 2%) of the all-antiferromagnetic MTJ is much larger than that estimated using the observed spin polarization. Theoretically, we found that the chiral antiferromagnetic MTJ may produce a substantially large TMR ratio as a result of the time-reversal, symmetry-breaking polarization characteristic of cluster magnetic octupoles. Our work lays the foundation for the development of ultrafast and efficient spintronic devices using antiferromagnets8-10.
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Affiliation(s)
- Xianzhe Chen
- Department of Physics, University of Tokyo, Tokyo, Japan.,Institute for Solid State Physics, University of Tokyo, Chiba, Japan
| | - Tomoya Higo
- Department of Physics, University of Tokyo, Tokyo, Japan.,Institute for Solid State Physics, University of Tokyo, Chiba, Japan.,CREST, Japan Science and Technology Agency, Saitama, Japan
| | - Katsuhiro Tanaka
- Research Center for Advanced Science and Technology, University of Tokyo, Tokyo, Japan
| | - Takuya Nomoto
- Research Center for Advanced Science and Technology, University of Tokyo, Tokyo, Japan.,PRESTO, Japan Science and Technology Agency, Saitama, Japan
| | - Hanshen Tsai
- Department of Physics, University of Tokyo, Tokyo, Japan.,Institute for Solid State Physics, University of Tokyo, Chiba, Japan
| | - Hiroshi Idzuchi
- Department of Physics, University of Tokyo, Tokyo, Japan.,Institute for Solid State Physics, University of Tokyo, Chiba, Japan
| | - Masanobu Shiga
- Institute for Solid State Physics, University of Tokyo, Chiba, Japan
| | - Shoya Sakamoto
- Institute for Solid State Physics, University of Tokyo, Chiba, Japan
| | - Ryoya Ando
- Institute for Solid State Physics, University of Tokyo, Chiba, Japan
| | - Hidetoshi Kosaki
- Institute for Solid State Physics, University of Tokyo, Chiba, Japan
| | - Takumi Matsuo
- Department of Physics, University of Tokyo, Tokyo, Japan
| | | | - Ryotaro Arita
- CREST, Japan Science and Technology Agency, Saitama, Japan.,Research Center for Advanced Science and Technology, University of Tokyo, Tokyo, Japan.,RIKEN, Center for Emergent Matter Science, Saitama, Japan
| | - Shinji Miwa
- Institute for Solid State Physics, University of Tokyo, Chiba, Japan.,CREST, Japan Science and Technology Agency, Saitama, Japan.,Trans-scale Quantum Science Institute, University of Tokyo, Tokyo, Japan
| | - Satoru Nakatsuji
- Department of Physics, University of Tokyo, Tokyo, Japan. .,Institute for Solid State Physics, University of Tokyo, Chiba, Japan. .,CREST, Japan Science and Technology Agency, Saitama, Japan. .,Trans-scale Quantum Science Institute, University of Tokyo, Tokyo, Japan. .,Canadian Institute for Advanced Research, Toronto, Ontario, Canada.
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36
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Wang Y, Zhu Z, Yu C, Wu R, Zhu J, Li B. Lego-Like Catalytic Hairpin Assembly Enables Controllable DNA-Oligomer Formation and Spatiotemporal Amplification in Single Molecular Signaling. Small 2023; 19:e2206283. [PMID: 36436946 DOI: 10.1002/smll.202206283] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2022] [Revised: 11/14/2022] [Indexed: 06/16/2023]
Abstract
While the solid-state nanopore shows increasing potential during sensitive and label-free single molecular analysis, target concentration and signal amplification method is in urgent need. In this article, a solution via designing a model nucleic acid circuit reaction that can produce "Y" shape-structure three-way DNA oligomers with controllable size and polymerization degree is proposed. Such a so-called lego-like three-way catalytic hairpin assembly (LK-3W-CHA) can provide both concentration amplification (via CHA circuit) and programmable size control (via lego-like building mode) to enhance spatiotemporal resolution in single molecular sensing of solid-state nanopore. Oligomers containing 1-4 DNA three-way junctions (Y monomers, Y1-Y4) are designed in proof-of-concept experiments and applications. When the oligomers are applied to direct translocation measurements, Y2-Y4 can significantly increase the signal resolution and stability than that of Y1. Meanwhile, Y1 to Y4 can be used as the tags on the long DNA carrier to provide very legible secondary signals for specific identification, multiple assays, and information storage. Compared with other possible tags, Y1-Y4 provides higher signal density and amplitude, and quasi-linear "inner reference" for each other, which may provide more systematic, reliable, and controllable experimental results.
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Affiliation(s)
- Yesheng Wang
- State Key Lab of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin, 130022, P. R. China
- University of Science & Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Zhentong Zhu
- Key Laboratory of Bioelectrochemistry & Environmental Analysis of Gansu Province, College of Chemistry & Chemical Engineering, Northwest Normal University, Lanzhou, Gansu, 730070, P. R. China
| | - Chunmiao Yu
- State Key Lab of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin, 130022, P. R. China
- University of Science & Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Ruiping Wu
- State Key Lab of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin, 130022, P. R. China
- University of Science & Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Jinbo Zhu
- Cavendish Lab, University of Cambridge, Cambridge, CB3 0HE, UK
| | - Bingling Li
- State Key Lab of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin, 130022, P. R. China
- University of Science & Technology of China, Hefei, Anhui, 230026, P. R. China
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37
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Orlandi F, Delmonte D, Calestani G, Cavalli E, Gilioli E, Shvartsman VV, Graziosi P, Rampino S, Spaggiari G, Liu C, Ren W, Picozzi S, Solzi M, Casappa M, Mezzadri F. γ-BaFe(2)O(4): a fresh playground for room temperature multiferroicity. Nat Commun 2022; 13:7968. [PMID: 36575166 DOI: 10.1038/s41467-022-35669-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/20/2022] [Accepted: 12/12/2022] [Indexed: 12/28/2022] Open
Abstract
Multiferroics, showing the coexistence of two or more ferroic orderings at room temperature, could harness a revolution in multifunctional devices. However, most of the multiferroic compounds known to date are not magnetically and electrically ordered at ambient conditions, so the discovery of new materials is pivotal to allow the development of the field. In this work, we show that BaFe2O4 is a previously unrecognized room temperature multiferroic. X-ray and neutron diffraction allowed to reveal the polar crystal structure of the compound as well as its antiferromagnetic behavior, confirmed by bulk magnetometry characterizations. Piezo force microscopy and electrical measurements show the polarization to be switchable by the application of an external field, while symmetry analysis and calculations based on density functional theory reveal the improper nature of the ferroelectric component. Considering the present findings, we propose BaFe2O4 as a Bi- and Pb-free model for the search of new advanced multiferroic materials.
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Risch F, Tikhonov Y, Lukyanchuk I, Ionescu AM, Stolichnov I. Giant switchable non thermally-activated conduction in 180° domain walls in tetragonal Pb(Zr,Ti)O(3). Nat Commun 2022; 13:7239. [PMID: 36433950 DOI: 10.1038/s41467-022-34777-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/08/2022] [Accepted: 11/04/2022] [Indexed: 11/27/2022] Open
Abstract
Conductive domain walls in ferroelectrics offer a promising concept of nanoelectronic circuits with 2D domain-wall channels playing roles of memristors or synoptic interconnections. However, domain wall conduction remains challenging to control and pA-range currents typically measured on individual walls are too low for single-channel devices. Charged domain walls show higher conductivity, but are generally unstable and difficult to create. Here, we show highly conductive and stable channels on ubiquitous 180° domain walls in the archetypical ferroelectric, tetragonal Pb(Zr,Ti)O3. These electrically erasable/rewritable channels show currents of tens of nanoamperes (200 to 400 nA/μm) at voltages ≤2 V and metallic-like non thermally-activated transport properties down to 4 K, as confirmed by nanoscopic mapping. The domain structure analysis and phase-field simulations reveal complex switching dynamics, in which the extraordinary conductivity in strained Pb(Zr,Ti)O3 films is explained by an interplay between ferroelastic a- and c-domains. This work demonstrates the potential of accessible and stable arrangements of nominally uncharged and electrically switchable domain walls for nanoelectronics.
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Zhang Z, Zhao X, Zhang X, Hou X, Ma X, Tang S, Zhang Y, Xu G, Liu Q, Long S. In-sensor reservoir computing system for latent fingerprint recognition with deep ultraviolet photo-synapses and memristor array. Nat Commun 2022; 13:6590. [PMID: 36329017 PMCID: PMC9633641 DOI: 10.1038/s41467-022-34230-8] [Citation(s) in RCA: 28] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/25/2022] [Accepted: 10/17/2022] [Indexed: 11/06/2022] Open
Abstract
Detection and recognition of latent fingerprints play crucial roles in identification and security. However, the separation of sensor, memory, and processor in conventional ex-situ fingerprint recognition system seriously deteriorates the latency of decision-making and inevitably increases the overall computing power. In this work, a photoelectronic reservoir computing (RC) system, consisting of DUV photo-synapses and nonvolatile memristor array, is developed to detect and recognize the latent fingerprint with in-sensor and parallel in-memory computing. Through the Ga-rich design, we achieve amorphous GaOx (a-GaOx) photo-synapses with an enhanced persistent photoconductivity (PPC) effect. The PPC effect, which induces nonlinearly tunable conductivity, renders the a-GaOx photo-synapses an ideal deep ultraviolet (DUV) photoelectronic reservoir, thus mapping the complex input vector into a dimensionality-reduced output vector. Connecting the reservoirs and a memristor array, we further construct an in-sensor RC system for latent fingerprint identification. The system maintains over 90% recognition accuracy for latent fingerprint within 15% stochastic noise level via the proposed dual-feature strategy. This work provides a subversive prototype system of DUV in-sensor RC for highly efficient recognition of latent fingerprints.
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Affiliation(s)
- Zhongfang Zhang
- grid.59053.3a0000000121679639School of Microelectronics, University of Science and Technology of China, Hefei, China
| | - Xiaolong Zhao
- grid.59053.3a0000000121679639School of Microelectronics, University of Science and Technology of China, Hefei, China
| | - Xumeng Zhang
- grid.8547.e0000 0001 0125 2443Frontier Institute of Chip and System, Fudan University, Shanghai, China
| | - Xiaohu Hou
- grid.59053.3a0000000121679639School of Microelectronics, University of Science and Technology of China, Hefei, China
| | - Xiaolan Ma
- grid.59053.3a0000000121679639School of Microelectronics, University of Science and Technology of China, Hefei, China
| | - Shuangzhu Tang
- grid.8547.e0000 0001 0125 2443Frontier Institute of Chip and System, Fudan University, Shanghai, China
| | - Ying Zhang
- grid.59053.3a0000000121679639School of Microelectronics, University of Science and Technology of China, Hefei, China
| | - Guangwei Xu
- grid.59053.3a0000000121679639School of Microelectronics, University of Science and Technology of China, Hefei, China
| | - Qi Liu
- grid.8547.e0000 0001 0125 2443Frontier Institute of Chip and System, Fudan University, Shanghai, China
| | - Shibing Long
- grid.59053.3a0000000121679639School of Microelectronics, University of Science and Technology of China, Hefei, China
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Lee J, Jang H, Lee SW, Kim KT. Nondestructive Sequencing of Enantiopure Oligoesters by Nuclear Magnetic Resonance Spectroscopy. JACS Au 2022; 2:2108-2118. [PMID: 36186555 PMCID: PMC9516704 DOI: 10.1021/jacsau.2c00388] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/08/2022] [Revised: 08/04/2022] [Accepted: 08/04/2022] [Indexed: 06/16/2023]
Abstract
Sequence-defined synthetic oligomers and polymers are promising molecular media for permanently storing digital information. However, the information decoding process relies on degradative sequencing methods such as mass spectrometry, which consumes the information-storing polymers upon decoding. Here, we demonstrate the nondestructive decoding of sequence-defined oligomers of enantiopure α-hydroxy acids, oligo(l-mandelic-co-d-phenyl lactic acid)s (oMPs), and oligo(l-lactic-co-glycolic acid)s (oLGs) by 13C nuclear magnetic resonance spectroscopy. We were able to nondestructively decode a bitmap image (192 bits) encoded using a library of 12 equimolar mixtures of an 8-bit-storing oMP and oLG, synthesized through semiautomated flow chemistry in less than 1% of the reaction time required for the repetition of conventional batch reactions. Our results highlight the potential of bundles of sequence-defined oligomers as efficient media for encoding and decoding large-scale information based on the automation of their synthesis and nondestructive sequencing processes.
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Abstract
Textiles hold great promise as a soft yet durable material for building comfortable robotic wearables and assistive devices at low cost. Nevertheless, the development of smart wearables composed entirely of textiles has been hindered by the lack of a viable sheet-based logic architecture that can be implemented using conventional fabric materials and textile manufacturing processes. Here, we develop a fully textile platform for embedding pneumatic digital logic in wearable devices. Our logic-enabled textiles support combinational and sequential logic functions, onboard memory storage, user interaction, and direct interfacing with pneumatic actuators. In addition, they are designed to be lightweight, easily integrable into regular clothing, made using scalable fabrication techniques, and durable enough to withstand everyday use. We demonstrate a textile computer capable of input-driven digital logic for controlling untethered wearable robots that assist users with functional limitations. Our logic platform will facilitate the emergence of future wearables powered by embedded fluidic logic that fully leverage the innate advantages of their textile construction.
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Shang Z, Liu T, Yang Q, Cui S, Xu K, Zhang Y, Deng J, Zhai T, Wang X. Chiral-Molecule-Based Spintronic Devices. Small 2022; 18:e2203015. [PMID: 35836101 DOI: 10.1002/smll.202203015] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2022] [Revised: 06/19/2022] [Indexed: 06/15/2023]
Abstract
Spintronics and molecular chemistry have achieved remarkable achievements separately. Their combination can apply the superiority of molecular diversity to intervene or manipulate the spin-related properties. It inevitably brings in a new type of functional devices with a molecular interface, which has become an emerging field in information storage and processing. Normally, spin polarization has to be realized by magnetic materials as manipulated by magnetic fields. Recently, chiral-induced spin selectivity (CISS) was discovered surprisingly that non-magnetic chiral molecules can generate spin polarization through their structural chirality. Here, the recent progress of integrating the strengths of molecular chemistry and spintronics is reviewed by introducing the experimental results, theoretical models, and device performances of the CISS effect. Compared to normal ferromagnetic metals, CISS originating from a chiral structure has great advantages of high spin polarization, excellent interface, simple preparation process, and low cost. It has the potential to obtain high efficiency of spin injection into metals and semiconductors, getting rid of magnetic fields and ferromagnetic electrodes. The physical mechanisms, unique advantages, and device performances of CISS are sequentially clarified, revealing important issues to current scientific research and industrial applications. This mini-review points out a key technology of information storage for future spintronic devices without magnetic components.
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Affiliation(s)
- Zixuan Shang
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Tianhan Liu
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, 90095, USA
| | - Qianqian Yang
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Shuainan Cui
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Kailin Xu
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Yu Zhang
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Jinxiang Deng
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Tianrui Zhai
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Xiaolei Wang
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
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43
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Xia H, Ding Y, Gong J, Lilienkampf A, Xie K, Bradley M. Programmable and Flexible Fluorochromic Polymer Microarrays for Information Storage. ACS Appl Mater Interfaces 2022; 14:27107-27117. [PMID: 35639498 PMCID: PMC9204690 DOI: 10.1021/acsami.2c02242] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2022] [Accepted: 05/16/2022] [Indexed: 05/04/2023]
Abstract
Photoresponsive fluorochromic materials are regarded as an effective means for information storage. Their reversible changes of color and fluorescence facilitate the storage process and increase the possible storage capacity. Here, we propose an optically reconfigurable Förster resonance energy transfer (FRET) process to realize tunable emissions based on photochromic spiropyrans and common fluorophores. The kinetics of the photoisomerization of the spiropyran and the FRET process of the composite were systematically investigated. Through tuning the ratios of the acceptor spiropyran and donor fluorophore and external light stimuli, a programmable FRET process was developed to obtain tunable outputs. More importantly, flexible microarrays were fabricated from such fluorochromic mixtures by inkjet printing (230 ppi) and the dynamic FRET process could also be applied to generate tunable fluorescence in ready-made microstructures. The flexible patterns created using the microarrays could be used as novel optically readable media for information storage by altering the composition and optical performance of every feature within the microarray. A key aspect of information storage such is anti-counterfeiting, and these colorful displays can be fabricated and integrated in a simple and straightforward system. The reliable fabrication and programmable optical performances of these large-scale flexible polymer microarrays represent a substantial step toward high-density and high-security information storage platforms.
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Affiliation(s)
- Hongyan Xia
- State
Key Laboratory of Precision Electronic Manufacturing Technology and
Equipment, School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou, Guangdong 510006, China
- EaStCHEM
School of Chemistry, University of Edinburgh, Edinburgh EH9 3FJ, United Kingdom
| | - Yuguo Ding
- EaStCHEM
School of Chemistry, University of Edinburgh, Edinburgh EH9 3FJ, United Kingdom
| | - Jingjing Gong
- EaStCHEM
School of Chemistry, University of Edinburgh, Edinburgh EH9 3FJ, United Kingdom
| | - Annamaria Lilienkampf
- EaStCHEM
School of Chemistry, University of Edinburgh, Edinburgh EH9 3FJ, United Kingdom
| | - Kang Xie
- State
Key Laboratory of Precision Electronic Manufacturing Technology and
Equipment, School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou, Guangdong 510006, China
| | - Mark Bradley
- EaStCHEM
School of Chemistry, University of Edinburgh, Edinburgh EH9 3FJ, United Kingdom
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Michalska-Walkowiak J, Förster B, Hauschild S, Förster S. Bistability, Remanence, Read/Write-Memory, and Logic Gate Function via a Stimuli-Responsive Polymer. Adv Mater 2022; 34:e2108833. [PMID: 35040531 DOI: 10.1002/adma.202108833] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2021] [Revised: 12/13/2021] [Indexed: 06/14/2023]
Abstract
Stimuli-responsive materials change their state in response to external triggers. Switching between different states enables information to be written, stored, and read, if the transition between the states exhibits hysteresis. Thermally responsive polymers exhibit an intrinsic hysteresis for the volume phase transition between the swollen and de-swollen solution state. Here, it is shown that this hysteresis can be used to realize bistability, remanence, and reversible write/read information storage. This is demonstrated for the simplest and most widely used thermoresponsive polymer, poly(N-isopropylacrylamide) (PNIPAM), as well as for PNIPAM block copolymers, which widens the hysteresis window. The hysteresis is shown to be related to cluster domain assembly/disassembly during the phase transition. Information can be written thermally using a laser, or using heated or cooled pen tips on a thin-film backscattering display. The bistable state can additionally be switched by pH, enabling an AND logic gate function. Furthermore, an unusual memory state is discovered, where information is visible in the hysteresis window and invisible at higher temperatures, allowing encoded information to be hidden. Since hysteresis is a very common intrinsic phenomenon for responsive materials, this principle to encode and store information is potentially applicable to a broad range of responsive materials.
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Affiliation(s)
- Joanna Michalska-Walkowiak
- Jülich Centre for Neutron Science (JCNS-1/IBI-8), Forschungszentrum Jülich, 52425, Jülich, Germany
- Institute of Physical Chemistry, RWTH Aachen University, 52074, Aachen, Germany
| | - Beate Förster
- Ernst Ruska Centre (ER-C 1), Forschungszentrum Jülich, 52425, Jülich, Germany
| | - Stephan Hauschild
- Jülich Centre for Neutron Science (JCNS-1/IBI-8), Forschungszentrum Jülich, 52425, Jülich, Germany
| | - Stephan Förster
- Jülich Centre for Neutron Science (JCNS-1/IBI-8), Forschungszentrum Jülich, 52425, Jülich, Germany
- Institute of Physical Chemistry, RWTH Aachen University, 52074, Aachen, Germany
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45
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Shi Q, Miao T, Liu Y, Hu L, Yang H, Shen H, Piao M, Huang Z, Zhang Z. Fabrication and Decryption of a Microarray of Digital Dithiosuccinimide Oligomers. Macromol Rapid Commun 2022; 43:e2200029. [PMID: 35322486 DOI: 10.1002/marc.202200029] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/15/2022] [Revised: 03/11/2022] [Indexed: 11/11/2022]
Abstract
Digital polymer with precisely arranged binary units provides an important option for information storage. This is especially true if the digital polymers are assembled in a device, as it would be of great benefit to data writing and reading in practice. Herein, inspired by DNA microarray technique, the programmable information storing and reading on a mass spectrometry target plate is proposed. First, an array of 4-bit sequence-coded dithiosuccinimide oligomers was efficiently built through sequential thiol-maleimide Michael couplings with good sequence readability by tandem mass spectrometry (MS/MS). Then, toward engineering microarray for information storage, a programmed robotic arm was specifically designed for precisely loading sequence-coded oligomers onto the target plate, and a decoding software was developed for efficient readout of the data from MS/MS sequencing. Notably, short sequence-coded oligomers chains can be used to write long strings of information, and extra error-correction codes are not required as usual due to the inherent concomitant fragmentation signals. Not only text but also bitimages can be automatically stored and decoded with excellent accuracy. This work provides a promising platform of digital polymers for programmable information storing and reading. This article is protected by copyright. All rights reserved.
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Affiliation(s)
- Qiunan Shi
- Q. Shi, T. Miao, Y. Liu, Prof. H. Shen, Prof. Z. Huang, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Tengfei Miao
- Q. Shi, T. Miao, Y. Liu, Prof. H. Shen, Prof. Z. Huang, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Yuxin Liu
- Q. Shi, T. Miao, Y. Liu, Prof. H. Shen, Prof. Z. Huang, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Lihua Hu
- Dr. L. Hu, Analysis and Testing Center, Soochow University, Suzhou, 215123, China
| | - Hai Yang
- H. Yang, Eurosmart Intelligent Technology Research Institute, Nanjing, 211106, China
| | - Hang Shen
- Q. Shi, T. Miao, Y. Liu, Prof. H. Shen, Prof. Z. Huang, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Minghao Piao
- Prof. M. Piao, Collaborative Innovation Center of Novel Software Technology and Industrialization, School of Computer Science and Technology, Soochow University, Suzhou, 215123, China
| | - Zhihao Huang
- Q. Shi, T. Miao, Y. Liu, Prof. H. Shen, Prof. Z. Huang, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Zhengbiao Zhang
- Prof. Z. Zhang, College of Chemistry, Chemical Engineering and Materials Science, State Key Laboratory of Radiation Medicine and Protection, Soochow University, Suzhou, 215123, China
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Liu Y, Zhao K, Ren Y, Wan S, Yang C, Li J, Wang F, Chen C, Su J, Chen D, Zhao Y, Liu K, Zhang H. Highly Plasticized Lanthanide Luminescence for Information Storage and Encryption Applications. Adv Sci (Weinh) 2022; 9:e2105108. [PMID: 35018745 PMCID: PMC8895122 DOI: 10.1002/advs.202105108] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2021] [Revised: 11/24/2021] [Indexed: 05/08/2023]
Abstract
The development of new storage media to meet the demands for diverse information storage scenarios is a great challenge. Here, a series of lanthanide-based luminescent organogels with ultrastrong mechanical performance and outstanding plasticity are developed for patterned information storage and encryption applications. The organogels possessing outstanding mechanical properties and tunable luminescent colors are prepared by electrostatic and coordinative interactions between natural DNA, synthetic ligands, and rare earth (RE) ions. The organogel-REs can be stretched by 180 times and show an ultrastrong breaking strength of 80 MPa. A series of applications with both information storage and encryption, such as self-information pattern, quick response (QR) code, and barcode, are successfully demonstrated by the organogel-REs. The developed information storage systems have various advantages of good processability, high stretchability, excellent stability, and versatile design of information patterns. Therefore, the organogel-RE-based information storage systems are suitable for applications under different scenarios, such as flexible devices under repeating rude operations. The advancements will enable the design and development of luminescent organogel-REs as information storage and encryption media for various scenarios.
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Affiliation(s)
- Yawei Liu
- College of Materials Science and Opto‐Electronic TechnologyUniversity of Chinese Academy of SciencesBeijing100049China
- State Key Laboratory of Rare Earth Resource UtilizationChangchun Institute of Applied ChemistryChinese Academy of SciencesChangchun130022China
| | - Kelu Zhao
- State Key Laboratory of Rare Earth Resource UtilizationChangchun Institute of Applied ChemistryChinese Academy of SciencesChangchun130022China
| | - Yubin Ren
- Key Laboratory of Organic Optoelectronics & Molecular Engineering of Ministry of EducationDepartment of ChemistryTsinghua UniversityBeijing100084China
| | - Sikang Wan
- State Key Laboratory of Rare Earth Resource UtilizationChangchun Institute of Applied ChemistryChinese Academy of SciencesChangchun130022China
| | - Chenjing Yang
- College of Energy Engineering and State Key Laboratory of Fluid Power and Mechatronic SystemsZhejiang UniversityHangzhou310027China
| | - Jingjing Li
- State Key Laboratory of Rare Earth Resource UtilizationChangchun Institute of Applied ChemistryChinese Academy of SciencesChangchun130022China
| | - Fan Wang
- State Key Laboratory of Rare Earth Resource UtilizationChangchun Institute of Applied ChemistryChinese Academy of SciencesChangchun130022China
| | - Chunying Chen
- National Center for Nanoscience and Technology of ChinaBeijing100190China
| | - Juanjuan Su
- College of Materials Science and Opto‐Electronic TechnologyUniversity of Chinese Academy of SciencesBeijing100049China
| | - Dong Chen
- College of Energy Engineering and State Key Laboratory of Fluid Power and Mechatronic SystemsZhejiang UniversityHangzhou310027China
| | - Yuliang Zhao
- National Center for Nanoscience and Technology of ChinaBeijing100190China
| | - Kai Liu
- State Key Laboratory of Rare Earth Resource UtilizationChangchun Institute of Applied ChemistryChinese Academy of SciencesChangchun130022China
- Key Laboratory of Organic Optoelectronics & Molecular Engineering of Ministry of EducationDepartment of ChemistryTsinghua UniversityBeijing100084China
| | - Hongjie Zhang
- State Key Laboratory of Rare Earth Resource UtilizationChangchun Institute of Applied ChemistryChinese Academy of SciencesChangchun130022China
- Key Laboratory of Organic Optoelectronics & Molecular Engineering of Ministry of EducationDepartment of ChemistryTsinghua UniversityBeijing100084China
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Navrátil J, Otyepka M, Błoński P. OsPd bimetallic dimer pushes the limit of magnetic anisotropy in atom-sized magnets for data storage. Nanotechnology 2022; 33:215001. [PMID: 35147526 DOI: 10.1088/1361-6528/ac5447] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2021] [Accepted: 02/10/2022] [Indexed: 06/14/2023]
Abstract
The growing gap between the volume of digital data being created and the extent of available storage capacities stimulates intensive research into surface-supported, well-ordered array of atom-sized magnets that represents the ultimate limit of magnetic data storage. Anchoring transition-metal heterodimers in vacancy defects in the graphene lattice has been identified as a vivid strategy to achieve large magnetic anisotropy energy (MAE) up to 80 meV with an easy axis aligned along the dimer bond. In this paper we have made a significant leap forward finding out MAE of 119 meV for an OsPt dimer and 170 meV for an OsPd dimer bound to a single nitrogen-decorated vacancy defect. The system with the highest MAE and with the theoretical storage density of ∼490 Tb·inch-2pushes the current limit of theoretical blocking temperature in graphene-supported transition-metal dimers from ∼20 to ∼44 K assuming the relaxation time of 10 years. The mechanism of the enhanced MAE is discussed.
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Affiliation(s)
- Jan Navrátil
- Department of Physical Chemistry, Faculty of Science, Palacký University Olomouc, tř. 17 listopadu 12, 779 00 Olomouc, Czech Republic
- Regional Centre of Advanced Technologies and Materials, Czech Advanced Technology and Research Institute (CATRIN), Palacký University Olomouc, Šlechtitelů 27, 779 00 Olomouc, Czech Republic
| | - Michal Otyepka
- Regional Centre of Advanced Technologies and Materials, Czech Advanced Technology and Research Institute (CATRIN), Palacký University Olomouc, Šlechtitelů 27, 779 00 Olomouc, Czech Republic
| | - Piotr Błoński
- Regional Centre of Advanced Technologies and Materials, Czech Advanced Technology and Research Institute (CATRIN), Palacký University Olomouc, Šlechtitelů 27, 779 00 Olomouc, Czech Republic
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48
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Jena AK, Mallik SK, Sahu MC, Sahoo S, Sahoo AK, Sharma NK, Mohanty J, Gupta SK, Ahuja R, Sahoo S. Strain-mediated ferromagnetism and low-field magnetic reversal in Co doped monolayer [Formula: see text]. Sci Rep 2022; 12:2593. [PMID: 35173206 PMCID: PMC8850603 DOI: 10.1038/s41598-022-06346-w] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/03/2021] [Accepted: 01/20/2022] [Indexed: 11/09/2022] Open
Abstract
Strain-mediated magnetism in 2D materials and dilute magnetic semiconductors hold multi-functional applications for future nano-electronics. Herein, First principles calculations are employed to study the influence of biaxial strain on the magnetic properties of Co-doped monolayer [Formula: see text]. The non-magnetic [Formula: see text] shows ferromagnetic signature upon Co doping due to spin polarization, which is further improved at low compressive (-2 %) and tensile (+2 %) strains. From the PDOS and spin density analysis, the opposite magnetic ordering is found to be favourable under the application of compressive and tensile strains. The double exchange interaction and p-d hybridization mechanisms make Co-doped [Formula: see text] a potential host for magnetism. More importantly, the competition between exchange and crystal field splittings, i.e. ([Formula: see text]), of the Co-atom play pivotal roles in deciding the values of the magnetic moments under applied strain. Micromagnetic simulation reveals, the ferromagnetic behavior calculated from DFT exhibits low-field magnetic reversal (190 Oe). Moreover, the spins of Co-doped [Formula: see text] are slightly tilted from the easy axis orientations showing slanted ferromagnetic hysteresis loop. The ferromagnetic nature of Co-doped [Formula: see text] suppresses beyond [Formula: see text] strain, which is reflected in terms of decrease in the coercivity in the micromagnetic simulation. The understanding of low-field magnetic reversal and spin orientations in Co-doped [Formula: see text] may pave the way for next-generation spintronics and straintronics applications.
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Affiliation(s)
- Anjan Kumar Jena
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar, 751005 India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094 India
| | - Sameer Kumar Mallik
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar, 751005 India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094 India
| | - Mousam Charan Sahu
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar, 751005 India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094 India
| | - Sandhyarani Sahoo
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar, 751005 India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094 India
| | - Ajit Kumar Sahoo
- Nanomagnetism and Microscopy Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy 502284 India
| | - Neha Kapila Sharma
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar, 751005 India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094 India
| | - J. Mohanty
- Nanomagnetism and Microscopy Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy 502284 India
| | - Sanjeev K. Gupta
- Computational Materials and Nanoscience Group, Department of Physics and Electronics, St.Xavier’s College, Ahmedabad, 380009 India
| | - Rajeev Ahuja
- Condensed Matter Theory Group, Department of Physics and Astronomy, Uppsala University, 75120 Uppsala, Sweden
- Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab 140001 India
| | - Satyaprakash Sahoo
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar, 751005 India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094 India
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Navrátil J, Otyepka M, Błoński P. OsPd bimetallic dimer pushes the limit of magnetic anisotropy in atom-sized magnets for data storage. Nanotechnology 2022. [PMID: 35144253 DOI: 10.1088/1361-6528/ac53d5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The growing gap between the volume of digital data being created and the extent of available storage capacities stimulates intensive research into surface-supported, well-ordered array of atom-sized magnets that represents the ultimate limit of magnetic data storage. Anchoring transition metal heterodimers in vacancy defects in the graphene lattice has been identified as a vivid strategy to achieve large magnetic anisotropy energy (MAE) up to 80 meV with an easy axis aligned along the dimer bond. In this paper we have made a significant leap forward finding out MAE of 119 meV for an OsPt dimer and 170 meV for an OsPd dimer bound to a single nitrogen-decorated vacancy defect. The system with the highest MAE and with the theoretical storage density of 490 Tb inch-2pushes the current limit of theoretical blocking temperature in graphene-supported transition-metal dimers from ~20 K to ~44 K assuming the relaxation time of 10 years. The mechanism of the enhanced MAE is discussed.
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Affiliation(s)
- Jan Navrátil
- Department of Physical Chemistry, Palacky University Olomouc, tr. 17 listopadu 12,, Olomouc, Olomoucký, 779 00, CZECH REPUBLIC
| | - Michal Otyepka
- Regional Centre of Advanced Technologies and Materials, Palacky University Olomouc, Slechtitelu 27, Olomouc, Olomoucký, 771 47, CZECH REPUBLIC
| | - Piotr Błoński
- Regional Centre of Advanced Technologies and Materials, Palacky University Olomouc, Šlechtitelů 27, Olomouc, Olomoucký, 779 00, CZECH REPUBLIC
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50
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Yang Y, Li Q, Zhang H, Liu H, Ji X, Tang BZ. Codes in Code: AIE Supramolecular Adhesive Hydrogels Store Huge Amounts of Information. Adv Mater 2021; 33:e2105418. [PMID: 34541727 DOI: 10.1002/adma.202105418] [Citation(s) in RCA: 39] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2021] [Revised: 08/10/2021] [Indexed: 05/07/2023]
Abstract
With the continuous advancement of information technology, the requirements for the information storage capacity of materials are getting higher and higher. However, information code materials usually only store a single piece of information. In order to improve their storage capacity, aggregation-induced emission (AIE) supramolecular adhesive hydrogels with different fluorescent colors are prepared, and a "Codes in Code" method is used to demonstrate the storage capacity for large amounts of information. Four kinds of poly(vinyl alcohol) (PVA) supramolecular hydrogels with different fluorescent colors are prepared; based on the hydrogen bonds on the hydrogel surface, these hydrogels can be assembled into a hydrogel, G5, which shows multiple fluorescent colors under the irradiation of UV light. When many 1D barcode patterns or/and 2D code patterns are incorporated into G5, not only a kind of 3D information but also plenty of 1D or/and 2D information can be stored. Therefore, the information codes prepared by the "Codes in Code" method can store a large amount of information.
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Affiliation(s)
- Yabi Yang
- Key Laboratory of Material Chemistry for Energy Conversion and Storage, Ministry of Education, Hubei Key Laboratory of Material Chemistry and Service Failure, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Qingyun Li
- Key Laboratory of Material Chemistry for Energy Conversion and Storage, Ministry of Education, Hubei Key Laboratory of Material Chemistry and Service Failure, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hanwei Zhang
- Key Laboratory of Material Chemistry for Energy Conversion and Storage, Ministry of Education, Hubei Key Laboratory of Material Chemistry and Service Failure, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hui Liu
- Key Laboratory of Material Chemistry for Energy Conversion and Storage, Ministry of Education, Hubei Key Laboratory of Material Chemistry and Service Failure, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xiaofan Ji
- Key Laboratory of Material Chemistry for Energy Conversion and Storage, Ministry of Education, Hubei Key Laboratory of Material Chemistry and Service Failure, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Ben Zhong Tang
- Shenzhen Institute of Molecular Aggregate Science and Engineering, School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, 2001 Longxiang Boulevard, Longgang District, Shenzhen City, Guangdong, 518172, China
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