Effective electrical manipulation of a topological antiferromagnet by orbital torques

The electrical control of the non-trivial topology in Weyl antiferromagnets is of great interest for the development of next-generation spintronic devices. Recent studies suggest that the spin Hall effect can switch the topological antiferromagnetic order. However, the switching efficiency remains relatively low. Here, we demonstrate the effective manipulation of antiferromagnetic order in the Weyl semimetal Mn3Sn using orbital torques originating from either metal Mn or oxide CuOx. Although Mn3Sn can convert orbital current to spin current on its own, we find that inserting a heavy metal layer, such as Pt, of appropriate thickness can effectively reduce the critical switching current density by one order of magnitude. In addition, we show that the memristor-like switching behaviour of Mn3Sn can mimic the potentiation and depression processes of a synapse with high linearity-which may be beneficial for constructing accurate artificial neural networks. Our work paves a way for manipulating the topological antiferromagnetic order and may inspire more high-performance antiferromagnetic functional devices.

Extendable piezo/ferroelectricity in nonstoichiometric 2D transition metal dichalcogenides

Engineering piezo/ferroelectricity in two-dimensional materials holds significant implications for advancing the manufacture of state-of-the-art multifunctional materials. The inborn nonstoichiometric propensity of two-dimensional transition metal dichalcogenides provides a spiffy ready-available solution for breaking inversion centrosymmetry, thereby conducing to circumvent size effect challenges in conventional perovskite oxide ferroelectrics. Here, we show the extendable and ubiquitous piezo/ferroelectricity within nonstoichiometric two-dimensional transition metal dichalcogenides that are predominantly centrosymmetric during standard stoichiometric cases. The emerged piezo/ferroelectric traits are aroused from the sliding of van der Waals layers and displacement of interlayer metal atoms triggered by the Frankel defects of heterogeneous interlayer native metal atom intercalation. We demonstrate two-dimensional chromium selenides nanogenerator and iron tellurides ferroelectric multilevel memristors as two representative applications. This innovative approach to engineering piezo/ferroelectricity in ultrathin transition metal dichalcogenides may provide a potential avenue to consolidate piezo/ferroelectricity with featured two-dimensional materials to fabricate multifunctional materials and distinguished multiferroic.

Berry Curvature Dipole Induced Giant Mid-Infrared Second-Harmonic Generation in 2D Weyl Semiconductor

Due to its inversion-broken triple helix structure and the nature of Weyl semiconductor, 2D Tellurene (2D Te) is promising to possess a strong nonlinear optical response in the infrared region, which is rarely reported in 2D materials. Here, a giant nonlinear infrared response induced by large Berry curvature dipole (BCD) is demonstrated in the Weyl semiconductor 2D Te. Ultrahigh second-harmonic generation response is acquired from 2D Te with a large second-order nonlinear optical susceptibility (χ(2) ), which is up to 23.3 times higher than that of monolayer MoS2 in the range of 700-1500 nm. Notably, distinct from other 2D nonlinear semiconductors, χ(2) of 2D Te increases extraordinarily with increasing wavelength and reaches up to 5.58 nm V-1 at ≈2300 nm, which is the best infrared performance among the reported 2D nonlinear materials. Large χ(2) of 2D Te also enables the high-intensity sum-frequency generation with an ultralow continuous-wave (CW) pump power. Theoretical calculations reveal that the exceptional performance is attributed to the presence of large BCD located at the Weyl points of 2D Te. These results unravel a new linkage between Weyl semiconductor and strong optical nonlinear responses, rendering 2D Te a competitive candidate for highly efficient nonlinear 2D semiconductors in the infrared region.

Low-Power Magnetron Sputtering Deposition of Antimonene Nanofilms for Water Splitting Reaction

Antimonene (Sb) is a novel kind of two-dimensional (2D) material that is predicted to be promising for various applications, such as water splitting and semiconductor devices. Several methods have been reported to prepare Sb nanoflakes/nanofilms; however, it is still relatively difficult to prepare Sb nanofilms. In this work, a method of low-power magnetron sputtering deposition was used for the preparation of Sb nanofilms with lateral dimensions on the centimeter scale and controllable film thickness. It was found that the control of the deposition temperature is important for the final crystalline structure of the nanofilms. Furthermore, the application of the nanofilms as a catalyst for water splitting (hydrogen evolution reaction (HER) and oxygen evolution reaction (OER)) was demonstrated.

Surface disinfection with silver loaded pencil graphite prepared with green UV photoreduction technique

Carbon-based materials have been studied for their antimicrobial properties. Previously, most antimicrobial studies are investigated with suspended nanoparticles in a liquid medium. Most works are often carried out with highly ordered pyrolytic graphite. These materials are expensive and are not viable for mass use on high-touch surfaces. Additionally, highly antimicrobial silver nanoparticles are often incorporated onto substrates by chemical reduction. At times, harmful chemicals are used. In this work, low-cost graphite pencils are mechanically exfoliated and transferred onto Si substrates. The sparsely-covered graphite flakes are treated by either plasma O₂or UV irradiation. Subsequently, Ag is photo reduced in the presence of UV onto selected graphite flake samples. It is found that graphite flake surface topography and defects are dependent on the treatment process. High surface roughness and (defects density,I_D/I_G) are induced by plasma O₂follows by UV and pristine graphite flake as follows: 6.45 nm (0.62), 4.96 nm (0.5), 3.79 nm (0.47). Antimicrobial tests withE. colireveal high killing efficiency by photoreduced Ag-on-graphite flake. The reversible effect of Ag leaching can be compensated by repeating the photoreduction process. This work proposes that UV treatment is a promising technique over that of plasma O₂in view that the latter treated surface could repel bacteria resulting in lower bacteria-killing efficiency.

Graphitisation of Waste Carbon Powder with Femtosecond Laser Annealing

Graphitisation of structural characteristics and improvement in electrical conductivity was reported onto waste carbon powder through femtosecond laser annealing. Raman spectroscopy on the carbon powder pre- and post-annealing showed a shift from amorphous-like carbon to graphitic-like carbon, which can be explained by the three-stage model. Electrical I-V probing of the samples revealed an increase in conductivity by up to 90%. An increase in incident laser power was found to be correlated to an increase in conductivity. An average incident laser power of 0.104 W or less showed little to no change in electrical characteristics, while an average incident laser power of greater than 1.626 W had a destructive effect on the carbon powder, shown through the reduction in powder. The most significant improvement in electrical conductivity has been observed at laser powers ranging from 0.526 to 1.286 W. To conclude, the graphitisation of waste carbon powder is possible using post-process femtosecond laser annealing to alter its electrical conductivity for future applications.

Enhanced Tunneling Magnetoresistance Effect via Ferroelectric Control of Interface Electronic/Magnetic Reconstructions

Magnetic tunnel junctions (MTJs) with tunable tunneling magnetoresistances (TMR) have already been proven to have great potential for spintronics. Especially, when ferroelectric materials are used as insulating barriers, more novel functions of MTJs can be realized due to interface magnetoelectric coupling. Here, we demonstrate a very large ferroelectric modulation of TMR (as high as 570% in low-resistance state) in the ferroelectric/magnetic La_0.5Sr_0.5MnO₃/BaTiO₃ (LSMO/BTO) junctions and find robust interfacial electronic and magnetic reconstructions via ferroelectric polarization switching. Through electrical, magnetic, and optical measurements combined with X-ray absorption and magnetic circular dichroism, we reveal that the interfacial electronic and magnetic (ferromagnetic/antiferromagnetic phase transition) reconstructions originate from strong electromagnetic coupling between BTO and LSMO at the interface and are driven by the modulation of hole/electron doping at the interface of LSMO/BTO through ferroelectric polarization switching. As a result, the ferroelectrically controlled interface barrier height and width and spin filter effect enable a giant electrical modulation of TMR. Our results shed new light on the intrinsic mechanisms governing magnetoelectric coupling and offering a new route to enhance magnetoelectric coupling for spin control in spintronic devices.

Development of a CMOS-Compatible Carbon Nanotube Array Transfer Method

Carbon nanotubes (CNTs) have, over the years, been used in research as a promising material in electronics as a thermal interface material and as interconnects amongst other applications. However, there exist several issues preventing the widespread integration of CNTs onto device applications, e.g., high growth temperature and interfacial resistance. To overcome these issues, a complementary metal oxide semiconductor (CMOS)-compatible CNT array transfer method that electrically connects the CNT arrays to target device substrates was developed. The method separates the CNT growth and preparation steps from the target substrate. Utilizing an alignment tool with the capabilities of thermocompression enables a highly accurate transfer of CNT arrays onto designated areas with desired patterns. With this transfer process as a starting point, improvement pointers are also discussed in this paper to further improve the quality of the transferred CNTs.

Ti3C2 (MXene) based field electron emitters

As a novel class of two-dimensional materials, MXene has provoked tremendous progress for various applications in functional devices. Here, we pioneer a preliminary understanding on the field emission behavior of MXene for the first time. Ti₃C₂ paper is fabricated by using facile filtration method, and multiple vertical sheets appear on the surface of MXene paper with high electrical conductivity (2.93 × 10⁵ S m^-1) and low work function (3.77 eV). The field electron emission performance and electric field distribution on MXene emitters are measured and simulated under planar and standing conditions. Both emitter conditions exhibit stable, uniform electron emission pattern, and the standing emitter achieves high emission current density of 59 mA cm^-2 under 7.5 V μm^-1. This work demonstrates the feasibility of MXene as cold electron source, establishing a preliminary foundation for its applications in field emission-based devices.

Engineering grain boundaries at the 2D limit for the hydrogen evolution reaction

Atom-thin transition metal dichalcogenides (TMDs) have emerged as fascinating materials and key structures for electrocatalysis. So far, their edges, dopant heteroatoms and defects have been intensively explored as active sites for the hydrogen evolution reaction (HER) to split water. However, grain boundaries (GBs), a key type of defects in TMDs, have been overlooked due to their low density and large structural variations. Here, we demonstrate the synthesis of wafer-size atom-thin TMD films with an ultra-high-density of GBs, up to ~1012 cm-2. We propose a climb and drive 0D/2D interaction to explain the underlying growth mechanism. The electrocatalytic activity of the nanograin film is comprehensively examined by micro-electrochemical measurements, showing an excellent hydrogen-evolution performance (onset potential: -25 mV and Tafel slope: 54 mV dec-1), thus indicating an intrinsically high activation of the TMD GBs.

Direct observation of ultrafast plasmonic hot electron transfer in the strong coupling regime

Achieving strong coupling between plasmonic oscillators can significantly modulate their intrinsic optical properties. Here, we report the direct observation of ultrafast plasmonic hot electron transfer from an Au grating array to an MoS₂ monolayer in the strong coupling regime between localized surface plasmons (LSPs) and surface plasmon polaritons (SPPs). By means of femtosecond pump-probe spectroscopy, the measured hot electron transfer time is approximately 40 fs with a maximum external quantum yield of 1.65%. Our results suggest that strong coupling between LSPs and SPPs has synergetic effects on the generation of plasmonic hot carriers, where SPPs with a unique nonradiative feature can act as an 'energy recycle bin' to reuse the radiative energy of LSPs and contribute to hot carrier generation. Coherent energy exchange between plasmonic modes in the strong coupling regime can further enhance the vertical electric field and promote the transfer of hot electrons between the Au grating and the MoS₂ monolayer. Our proposed plasmonic strong coupling configuration overcomes the challenge associated with utilizing hot carriers and is instructive in terms of improving the performance of plasmonic opto-electronic devices.

Ultrasensitive 2D Bi2 O2 Se Phototransistors on Silicon Substrates

2D materials are considered as intriguing building blocks for next-generation optoelectronic devices. However, their photoresponse performance still needs to be improved for practical applications. Here, ultrasensitive 2D phototransistors are reported employing chemical vapor deposition (CVD)-grown 2D Bi₂ O₂ Se transferred onto silicon substrates with a noncorrosive transfer method. The as-transferred Bi₂ O₂ Se preserves high quality in contrast to the serious quality degradation in hydrofluoric-acid-assisted transfer. The phototransistors show a responsivity of 3.5 × 10⁴ A W^-1 , a photoconductive gain of more than 10⁴ , and a time response in the order of sub-millisecond. With back gating of the silicon substrate, the dark current can be reduced to several pA. This yields an ultrahigh sensitivity with a specific detectivity of 9.0 × 10¹³ Jones, which is one of the highest values among 2D material photodetectors and two orders of magnitude higher than that of other CVD-grown 2D materials. The high performance of the phototransistor shown here together with the developed unique transfer technique are promising for the development of novel 2D-material-based optoelectronic applications as well as integrating with state-of-the-art silicon photonic and electronic technologies.

Ultrasensitive 2D Bi2 O2 Se Phototransistors on Silicon Substrates

2D materials are considered as intriguing building blocks for next-generation optoelectronic devices. However, their photoresponse performance still needs to be improved for practical applications. Here, ultrasensitive 2D phototransistors are reported employing chemical vapor deposition (CVD)-grown 2D Bi₂ O₂ Se transferred onto silicon substrates with a noncorrosive transfer method. The as-transferred Bi₂ O₂ Se preserves high quality in contrast to the serious quality degradation in hydrofluoric-acid-assisted transfer. The phototransistors show a responsivity of 3.5 × 10⁴ A W^-1 , a photoconductive gain of more than 10⁴ , and a time response in the order of sub-millisecond. With back gating of the silicon substrate, the dark current can be reduced to several pA. This yields an ultrahigh sensitivity with a specific detectivity of 9.0 × 10¹³ Jones, which is one of the highest values among 2D material photodetectors and two orders of magnitude higher than that of other CVD-grown 2D materials. The high performance of the phototransistor shown here together with the developed unique transfer technique are promising for the development of novel 2D-material-based optoelectronic applications as well as integrating with state-of-the-art silicon photonic and electronic technologies.

Controlled, Low-Temperature Nanogap Propagation in Graphene Using Femtosecond Laser Patterning

Graphene nanogap systems are promising research tools for molecular electronics, memories, and nanodevices. Here, a way to control the propagation of nanogaps in monolayer graphene during electroburning is demonstrated. A tightly focused femtosecond laser beam is used to induce defects in graphene according to selected patterns. It is shown that, contrary to the pristine graphene devices where nanogap position and shape are uncontrolled, the nanogaps in prepatterned devices propagate along the defect line created by the femtosecond laser. Using passive voltage contrast combined with atomic force microscopy, the reproducibility of the process with a 92% success rate over 26 devices is confirmed. Coupling in situ infrared thermography and finite element analysis yields a real-time estimation of the device temperature during electrical loading. The controlled nanogap formation occurs well below 50 °C when the defect density is high enough. In the perspective of graphene-based circuit fabrication, the availability of a cold electroburning process is critical to preserve the full circuit from thermal damage.

Enhanced field emission properties of carbon nanotube bundles confined in SiO2 pits

It has been widely reported that carbon nanotubes (CNTs) exhibit superior field emission (FE) properties due to their high aspect ratios and unique structural properties. Among the various types of CNTs, random growth CNTs exhibit promising FE properties due to their reduced inter-tube screening effect. However, growing random growth CNTs on individual catalyst islands often results in spread out CNT bundles, which reduces overall field enhancement. In this study, significant improvement in FE properties in CNT bundles is demonstrated by confining them in microfabricated SiO₂ pits. Growing CNT bundles in narrow (0.5 μm diameter and 2 μm height) SiO₂ pits achieves FE current density of 1-1.4 A cm^-2, which is much higher than for freestanding CNT bundles (76.9 mA cm^-2). From the Fowler Nordheim plots, confined CNT bundles show a higher field enhancement factor. This improvement can be attributed to the reduced bundle diameter by SiO₂ pit confinement, which yields bundles with higher aspect ratios. Combining the obtained outcomes, it can be conclusively summarized that confining CNTs in SiO₂ pits yields higher FE current density due to the higher field enhancement of confined CNTs.

Field emission properties of SiO2-wrapped CNT field emitter

Carbon nanotubes (CNTs) exhibit unstable field emission (FE) behavior with low reliability due to uneven heights of as-grown CNTs. It has been reported that a mechanically polished SiO₂-wrapped CNT field emitter gives consistent FE performance due to its uniform CNT heights. However, there are still a lack of studies on the comparison between the FE properties of freestanding and SiO₂-wrapped CNTs. In this study, we have performed a comparative study on the FE properties of freestanding and SiO₂-wrapped CNT field emitters. From the FE measurements, freestanding CNT field emitter requires lower applied voltage of 5.5 V μm^-1 to achieve FE current density of 22 mA cm^-2; whereas SiO₂-wrapped field emitter requires 8.5 V μm^-1 to achieve the same current density. This can be attributed to the lower CNT tip electric field of CNTs embedded in SiO₂, as obtained from the electric field simulation. Nevertheless, SiO₂-wrapped CNTs show higher consistency in FE current than freestanding CNTs. Under repeated FE measurement, SiO₂-wrapped CNT field emitter achieves consistent FE behavior from the 1st voltage sweep, whereas freestanding field emitter only achieved consistent FE performance after 3rd voltage sweep. At the same time, SiO₂-wrapped CNTs exhibit better emission stability than freestanding CNTs over 4000 s continuous emission.

Enhanced Carbon Nanotubes Growth Using Nickel/Ferrocene-Hybridized Catalyst

Tall, crystalline carbon nanotubes (CNTs) are desired to successfully integrate them in various applications. As the crystallinity of CNTs improves with increasing growth temperatures, higher growth temperatures are required to obtain crystalline CNTs. However, in a typical chemical vapor deposition (CVD) process, CNT growth rate reduces when the growth temperature exceeds a specific level due to the degradation of the catalyst particles. In this study, we have demonstrated the improved catalytic activity of nickel/ferrocene-hybridized catalyst as compared to sole ferrocene catalyst. To demonstrate this, CNTs are grown on bare silicon (Si) as well as nickel (Ni) catalyst-deposited substrates using volatile catalyst source (ferrocene/xylene) CVD at the growth temperatures ranging from 790 to 880 °C. It was found that CNTs grown on bare Si substrate experience a reduction in height at growth temperature above 860 °C, whereas the CNTs grown on 10 nm Ni catalyst-deposited substrates experience continuous increase in height as the temperature increases from 790 to 880 °C. The enhancement in the height of CNTs by the addition of Ni catalyst is also demonstrated on 5, 20, and 30 nm Ni layers. The examination of CNTs using electron microscopy and Raman spectra shows that the additional Ni catalyst source improves the CNT growth rates and crystallinity, yielding taller CNTs with a high degree of structural crystallinity.

Surface plasmons in suspended graphene: launching with in-plane gold nanoantenna and propagation properties

Graphene physics and plasmonics are two fields which, once combined, promise a variety of exciting applications. One of those applications is the integration of active nano-optoelectronic devices in electronic systems, using the fact that plasmons in graphene are tunable, highly confined and weakly damped. A crucial challenge remains before achieving these active devices: finding a platform enabling a high propagation of Graphene Plasmons Polaritons (GPPs). Suspended graphene presenting ultrahigh electron mobility has given rise to increasing interest. We numerically studied the plasmonic properties of suspended graphene. We propose a hybrid configuration and a set of conditions to launch graphene plasmons via an in-plane gold nanoantenna, for micrometric propagation of surface plasmons in suspended graphene. Finally, we propose a realistic optoelectronic device based on the use of suspended graphene.

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics

Due to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for the electronic and optoelectronic applications. Identifying new promising 2D materials will be rewarding toward the development of next generation 2D electronics. Here, palladium diselenide (PdSe₂ ), a noble-transition metal dichalcogenide (TMDC), is introduced as a promising high mobility 2D material into the fast growing 2D community. Field-effect transistors (FETs) based on ultrathin PdSe₂ show intrinsic ambipolar characteristic. The polarity of the FET can be tuned. After vacuum annealing, the authors find PdSe₂ to exhibit electron-dominated transport with high mobility (µ_{e (max)} = 216 cm² V^-1 s^-1 ) and on/off ratio up to 10³ . Hole-dominated-transport PdSe₂ can be obtained by molecular doping using F₄ -TCNQ. This pioneer work on PdSe₂ will spark interests in the less explored regime of noble-TMDCs.

An Asymmetric Supercapacitor with Both Ultra-High Gravimetric and Volumetric Energy Density Based on 3D Ni(OH)2/MnO2@Carbon Nanotube and Activated Polyaniline-Derived Carbon

Development of a supercapacitor device with both high gravimetric and volumetric energy density is one of the most important requirements for their practical application in energy storage/conversion systems. Currently, improvement of the gravimetric/volumetric energy density of a supercapacitor is restricted by the insufficient utilization of positive materials at high loading density and the inferior capacitive behavior of negative electrodes. To solve these problems, we elaborately designed and prepared a 3D core-shell structured Ni(OH)₂/MnO₂@carbon nanotube (CNT) composite via a facile solvothermal process by using the thermal chemical vapor deposition grown-CNTs as support. Owing to the superiorities of core-shell architecture in improving the service efficiency of pseudocapacitive materials at high loading density, the prepared Ni(OH)₂/MnO₂@CNT electrode demonstrated a high capacitance value of 2648 F g^-1 (1 A g^-1) at a high loading density of 6.52 mg cm^-2. Coupled with high-performance activated polyaniline-derived carbon (APDC, 400 F g^-1 at 1 A g^-1), the assembled Ni(OH)₂/MnO₂@CNT//APDC asymmetric device delivered both high gravimetric and volumetric energy density (126.4 Wh kg^-1 and 10.9 mWh cm^-3, respectively), together with superb rate performance and cycling lifetime. Moreover, we demonstrate an effective approach for building a high-performance supercapacitor with high gravimetric/volumetric energy density.

Ultrafast-Charging Supercapacitors Based on Corn-Like Titanium Nitride Nanostructures

Ultrahigh rates realized by ALD-made TiN. The symmetric full-cell supercapacitors deliver a typical capacitance of 20.7 F cm^-3 at a scan rate of 1 V s^-1, and retain 4.3 F cm^-3 at high rate of 100 V s^-1. The devices can be charged and discharged for 20 000 cycles with negligible capacitance loss and with an ultralow self-discharge current (≈1 μA).

Oxidation-Based Continuous Laser Writing in Vertical Nano-Crystalline Graphite Thin Films

Nano and femtosecond laser writing are becoming very popular techniques for patterning carbon-based materials, as they are single-step processes enabling the drawing of complex shapes without photoresist. However, pulsed laser writing requires costly laser sources and is known to cause damages to the surrounding material. By comparison, continuous-wave lasers are cheap, stable and provide energy at a more moderate rate. Here, we show that a continuous-wave laser may be used to pattern vertical nano-crystalline graphite thin films with very few macroscale defects. Moreover, a spatially resolved study of the impact of the annealing to the crystalline structure and to the oxygen ingress in the film is provided: amorphization, matter removal and high oxygen content at the center of the beam; sp² clustering and low oxygen content at its periphery. These data strongly suggest that amorphization and matter removal are controlled by carbon oxidation. The simultaneous occurrence of oxidation and amorphization results in a unique evolution of the Raman spectra as a function of annealing time, with a decrease of the I(D)/I(G) values but an upshift of the G peak frequency.

Controlled Synthesis of Organic/Inorganic van der Waals Solid for Tunable Light-Matter Interactions

High-quality organic and inorganic van der Waals (vdW) solids are realized using methylammonium lead halide (CH3 NH3 PbI3 ) as the organic part (organic perovskite) and 2D inorganic monolayers as counterparts. By stacking on various 2D monolayers, the vdW solids exhibit dramatically different light emissions. Futhermore, organic/h-BN vdW solid arrays are patterned for red-light emission.

Stacking-Dependent Interlayer Coupling in Trilayer MoS₂ with Broken Inversion Symmetry

The stacking configuration in few-layer two-dimensional (2D) materials results in different structural symmetries and layer-to-layer interactions, and hence it provides a very useful parameter for tuning their electronic properties. For example, ABA-stacking trilayer graphene remains semimetallic similar to that of monolayer, while ABC-stacking is predicted to be a tunable band gap semiconductor under an external electric field. Such stacking dependence resulting from many-body interactions has recently been the focus of intense research activities. Here we demonstrate that few-layer MoS2 samples grown by chemical vapor deposition with different stacking configurations (AA, AB for bilayer; AAB, ABB, ABA, AAA for trilayer) exhibit distinct coupling phenomena in both photoluminescence and Raman spectra. By means of ultralow-frequency (ULF) Raman spectroscopy, we demonstrate that the evolution of interlayer interaction with various stacking configurations correlates strongly with layer-breathing mode (LBM) vibrations. Our ab initio calculations reveal that the layer-dependent properties arise from both the spin-orbit coupling (SOC) and interlayer coupling in different structural symmetries. Such detailed understanding provides useful guidance for future spintronics fabrication using various stacked few-layer MoS2 blocks.

All Metal Nitrides Solid-State Asymmetric Supercapacitors

Two metal nitrides, TiN porous layers and Fe2 N nanoparticles, are grown uniformly with the assistance of atomic layer deposition on vertically aligned graphene nanosheets and used as the cathode and anode for solid-state supercapacitors, respectively. Full cells are constructed and show good flexibility, high-rate capability, and 98% capacitance retention after 20,000 cycles.

High-performance microsupercapacitors based on two-dimensional graphene/manganese dioxide/silver nanowire ternary hybrid film

Microsupercapacitors (MSCs), as one type of significant power source or energy storage unit in microelectronic devices, have attracted more and more attention. However, how to reasonably design electrode structures and exploit the active materials to endow the MSCs with excellent performances in a limited surface area still remains a challenge. Here, a reduced graphene oxide (RGO)/manganese dioxide (MnO2)/silver nanowire (AgNW) ternary hybrid film (RGMA ternary hybrid film) is successfully fabricated by a facile vacuum filtration and subsequent thermal reduction, and is used directly as a binder-free electrode for MSCs. Additionally, a flexible, transparent, all-solid state RMGA-MSC is also built, and its electrochemical performance in an ionic liquid gel electrolyte are investigated in depth. Notably, the RGMA-MSCs display superior electrochemical properties, including exceptionally high rate capability (up to 50000 mV·s(-1)), high frequency response (very short corresponding time constant τ0 = 0.14 ms), and excellent cycle stability (90.3% of the initial capacitance after 6000 cycles in ionic liquid gel electrolyte). Importantly, the electrochemical performance of RGMA-MSCs shows a strong dependence on the geometric parameters including the interspace between adjacent fingers and the width of the finger of MSCs. These encouraging results may not only provide important references for the design and fabrication of high-performance MSCs, but also make the RGMA ternary hybrid film promising for the next generation film lithium ion batteries and other energy storage devices.

Vertical and in-plane heterostructures from WS2/MoS2 monolayers

Layer-by-layer stacking or lateral interfacing of atomic monolayers has opened up unprecedented opportunities to engineer two-dimensional heteromaterials. Fabrication of such artificial heterostructures with atomically clean and sharp interfaces, however, is challenging. Here, we report a one-step growth strategy for the creation of high-quality vertically stacked as well as in-plane interconnected heterostructures of WS2/MoS2 via control of the growth temperature. Vertically stacked bilayers with WS2 epitaxially grown on top of the MoS2 monolayer are formed with preferred stacking order at high temperature. A strong interlayer excitonic transition is observed due to the type II band alignment and to the clean interface of these bilayers. Vapour growth at low temperature, on the other hand, leads to lateral epitaxy of WS2 on MoS2 edges, creating seamless and atomically sharp in-plane heterostructures that generate strong localized photoluminescence enhancement and intrinsic p-n junctions. The fabrication of heterostructures from monolayers, using simple and scalable growth, paves the way for the creation of unprecedented two-dimensional materials with exciting properties.

Chemical vapor deposition growth of crystalline monolayer MoSe2

Recently, two-dimensional layers of transition metal dichalcogenides, such as MoS2, WS2, MoSe2, and WSe2, have attracted much attention for their potential applications in electronic and optoelectronic devices. The selenide analogues of MoS2 and WS2 have smaller band gaps and higher electron mobilities, making them more appropriate for practical devices. However, reports on scalable growth of high quality transition metal diselenide layers and studies of their properties have been limited. Here, we demonstrate the chemical vapor deposition (CVD) growth of uniform MoSe2 monolayers under ambient pressure, resulting in large single crystalline islands. The photoluminescence intensity and peak position indicates a direct band gap of 1.5 eV for the MoSe2 monolayers. A back-gated field effect transistor based on MoSe2 monolayer shows n-type channel behavior with average mobility of 50 cm(2) V(-1) s(-1), a value much higher than the 4-20 cm(2) V(-1) s(-1) reported for vapor phase grown MoS2.

A binder-free CNT network–MoS2 composite as a high performance anode material in lithium ion batteries

CNT network and MoS₂ are rationally architected into a composite, which demonstrates excellent performances as a binder-free anode material in LIB.

Femtosecond laser modification of an array of vertically aligned carbon nanotubes intercalated with Fe phase nanoparticles

Femtosecond lasers (FSL) are playing an increasingly important role in materials research, characterization, and modification. Due to an extremely short pulse width, interactions of FSL irradiation with solid surfaces attract special interest, and a number of unusual phenomena resulted in the formation of new materials are expected. Here, we report on a new nanostructure observed after the interaction of FSL irradiation with arrays of vertically aligned carbon nanotubes (CNTs) intercalated with iron phase catalyst nanoparticles. It was revealed that the FSL laser ablation transforms the topmost layer of CNT array into iron phase nanospheres (40 to 680 nm in diameter) located at the tip of the CNT bundles of conical shape. Besides, the smaller nanospheres (10 to 30 nm in diameter) are found to be beaded at the sides of these bundles. Some of the larger nanospheres are encapsulated into carbon shells, which sometime are found to contain CNTs. The mechanism of creation of such nanostructures is proposed.

Identifying the mechanisms of p-to-n conversion in unipolar graphene field-effect transistors

The mechanisms of p-to-n conversion and vice versa in unipolar graphene field-effect transistors (GFETs) were systematically studied using Raman spectroscopy. Unipolar p-type GFETs are achieved by decorating the graphene surface with a thin layer of titanium (Ti) film, resulting in a Raman D peak. The D peak is observed to recover by annealing the GFET in nitrogen ambient followed by silicon nitride (Si3N4) deposition, suggesting that the Ti adatoms are being partially removed. Furthermore, unipolar n-type GFETs are obtained after the passivation on p-type GFETs. The threshold voltage of the n-type GFET is dependent on the thickness of the Si3N4 layer, which increases as the thickness decreases. A comparison between the Si3N4 and SiO2 passivation layers shows that SiO2 passivation does not convert the GFET into n-type graphene, which identifies the significance of ammonia (NH3) for the formation of the n-type GFETs. This study provides an insight into the mechanism of controlling the conduction behavior of unipolar GFETs.

High performance carbon nanotube-Si core-shell wires with a rationally structured core for lithium ion battery anodes

Core-shell Si nanowires are very promising anode materials. Here, we synthesize vertically aligned carbon nanotubes (CNTs) with relatively large diameters and large inter-wire spacing as core wires and demonstrate a CNT-Si core-shell wire composite as a lithium ion battery (LIB) anode. Owing to the rationally engineered core structure, the composite shows good capacity retention and rate performance. The excellent performance is superior to most core-shell nanowires previously reported.

Re-ordering chaotic carbon: origins and application of textured carbon

Formation of nanocrystals with preferred orientation within the amorphous carbon matrix has attracted lots of theoretical and experimental attentions recently. Interesting properties of this films, easy fabrication methods and practical problems associated with the growth of other carbon nanomaterials such as carbon nanotubes (CNTs) and graphene gives this new class of carbon nanostructure a potential to be considered as a replacement for some applications such as thermal management at nanoscale and interconnects. In this short review paper, the fabrication techniques and associated formation mechanisms of these nanostructured films have been discussed. Besides, electrical and thermal properties of these nanostructured films have been compared with CNTs and graphene.

Growth and characterization of bamboo-shaped carbon nanotubes using nanocluster-assembled ZnO:Co thin films as catalyst

Bamboo-shaped carbon nanotubes (CNTs) had been successfully fabricated by a plasma enhanced chemical vapor deposition method, in which nanocluster-assembled ZnO:Co thin film was used as catalyst. It was found that bamboo-shaped CNTs were generally grown in a direction perpendicularly to the substrate surface with the tops of CNTs dominated by the droplet-like catalyst covered by the carbon layer. The diameter of CNTs was ranged from 20-50 nm. High resolution of TEM image showed that the typical CNT had a multi-walled structure with an inner core presented. The ordered graphite layers were inclined to an axis of CNT about 18 degrees and the interlayer space of a CNT was about 0.35 nm. Two peaks in Raman spectrum at 1586 cm(-1) and 1372 cm(-1) were identified as G-band and D-band for graphite, respectively. The results showed that catalyst based on ZnO:Co thin films could be used for the growth of CNTs with bamboo-shaped structure.

Thickness dependency of field emission in amorphous and nanostructured carbon thin films

Thickness dependency of the field emission of amorphous and nanostructured carbon thin films has been studied. It is found that in amorphous and carbon films with nanometer-sized sp2 clusters, the emission does not depend on the film thickness. This further proves that the emission happens from the surface sp2 sites due to large enhancement of electric field on these sites. However, in the case of carbon films with nanocrystals of preferred orientation, the emission strongly depends on the film thickness. sp2-bonded nanocrystals have higher aspect ratio in thicker films which in turn results in higher field enhancement and hence easier electron emission.

Mildly reduced graphene oxide-Ag nanoparticle hybrid films for surface-enhanced Raman scattering

Large-area mildly reduced graphene oxide (MR-GO) monolayer films were self-assembled on SiO2/Si surfaces via an amidation reaction strategy. With the MR-GO as templates, MR-GO-Ag nanoparticle (MR-GO-Ag NP) hybrid films were synthesized by immersing the MR-GO monolayer into a silver salt solution with sodium citrate as a reducing agent under UV illumination. SEM image indicated that Ag NPs with small interparticle gap are uniformly distributed on the MR-GO monolayer. Raman spectra demonstrated that the MR-GO monolayer beneath the Ag NPs can effectively quench the fluorescence signal emitted from the Ag films and dye molecules under laser excitation, resulting in a chemical enhancement (CM). The Ag NPs with narrow gap provided numerous hot spots, which are closely related with electromagnetic mechanism (EM), and were believed to remarkably enhance the Raman signal of the molecules. Due to the co-contribution of the CM and EM effects as well as the coordination mechanism between the MR-GO and Ag NPs, the MR-GO-Ag NP hybrid films showed more excellent Raman signal enhancement performance than that of either Ag films or MR-GO monolayer alone. This will further enrich the application of surface-enhanced Raman scattering in molecule detection.

Carbon nanotube bumps for the flip chip packaging system

Carbon nanotube [CNT] interconnection bump joining methodology has been successfully demonstrated using flip chip test structures with bump pitches smaller than 150 μm. In this study, plasma-enhanced chemical vapor deposition approach is used to grow the CNT bumps onto the Au metallization lines. The CNT bumps on the die substrate are then 'inserted' into the CNT bumps on the carrier substrate to form the electrical connections (interconnection bumps) between each other. The mechanical strength and the concept of reworkable capabilities of the CNT interconnection bumps are investigated. Preliminary electrical characteristics show a linear relationship between current and voltage, suggesting that ohmic contacts are attained.

Growth of few-wall carbon nanotubes with narrow diameter distribution over Fe-Mo-MgO catalyst by methane/acetylene catalytic decomposition

Few-wall carbon nanotubes were synthesized by methane/acetylene decomposition over bimetallic Fe-Mo catalyst with MgO (1:8:40) support at the temperature of 900°C. No calcinations and reduction pretreatments were applied to the catalytic powder. The transmission electron microscopy investigation showed that the synthesized carbon nanotubes [CNTs] have high purity and narrow diameter distribution. Raman spectrum showed that the ratio of G to D band line intensities of IG/ID is approximately 10, and the peaks in the low frequency range were attributed to the radial breathing mode corresponding to the nanotubes of small diameters. Thermogravimetric analysis data indicated no amorphous carbon phases. Experiments conducted at higher gas pressures showed the increase of CNT yield up to 83%. Mössbauer spectroscopy, magnetization measurements, X-ray diffraction, high-resolution transmission electron microscopy, and electron diffraction were employed to evaluate the nature of catalyst particles.

Carbon nanowires fabrications via top down approach

Carbon nanowires are fabricated by the Langmuir Blodgett (LB) method via the top down approach on amorphous carbon. Thick a-C films (500 nm to 1 microm) have been successfully deposited after the treatment on silicon. The anisotropic etching of carbon using reactive ion etching (RIE) has been verified giving near vertical sidewalls. The LB method for depositing monolayer requires a hydrophilic surface. Plasma treatment is being performed on the silicon oxide hard mask to reduce the surface energy thereby making the surface from hydrophobic to hydrophilic. PS balls which are being deposited by LB method have one disadvantage which is the low adhesion of the PS ball to the silicon oxide surface. This adhesion is being improved by subjecting the PS ball to annealing which changes the shape and increase the contact area between the PS balls and the silicon oxide surface. As carbon and PS ball is vulnerable to oxygen plasma, a modified recipe of CF4:Ar was being used to etch the silicon oxide hard mask. There is almost little chemical reaction of the CF4 on carbon and PS ball. Carbon nanowires were successfully fabricated using polystyrene (PS) balls of diameter 450 nm. Through a series of steps, carbon nanowire of 500 nm in length and diameter approximately 250 nm can be produced.

Facile fabrication of Si nanowire arrays for solar cell application

Large-area Si nanowire arrays have been fabricated on phosphorus doped Si surface by a facile silver-catalyzed chemical etching process. The solar cell incorporated with Si nanowire arrays shows a power conversion efficiency of 6.69% with an open circuit voltage of 558 mV and a short circuit current density of 25.13 mA/cm2 under AM 1.5 G illumination without using any extra antireflection layer and surface passivation technique. The high power conversion efficiency of Si nanowires based-solar cell is attributed to the low reflectance loss of Si nanowire arrays for incident sunlight. Optimization of electrical contact and phosphorus diffusion process will be critical to improve the performance of Si nanowires-based solar cell in the future.

Densitometry trends in postmenopausal Asian women undergoing bisphosphonate treatment

INTRODUCTION

Bisphosphonates have been shown to be effective in reducing the risk of fragility fractures in several landmark clinical trials conducted in Western populations. However, limited studies on bone mineral densitometry (BMD) trends have been conducted in Asian women. We conducted a retrospective review of electronic records to determine the actual BMD trends in a local population of postmenopausal women on bisphosphonate treatment.

METHODS

The electronic records of all women over 50 years of age who had undergone BMD at Singapore General Hospital in 2004 were examined. Patients who were later started on bisphosphonates and continued the treatment for at least two years were selected for the study. Their subsequent BMD results were recorded, and longitudinal analysis was applied to determine the BMD trends as a cohort.

RESULTS

A total of 254 postmenopausal women were included for analysis. Their mean BMD T-score was -2.70 before treatment, and improved to -2.56 and -2.27 one and two years after treatment, respectively. However, the score deteriorated to -2.50 and -2.62 three and four years after treatment, respectively. The difference between each year's results and those of the baseline was statistically significant.

CONCLUSION

In our study, the BMD scores in our local population showed improvement in the first two years of bisphosphonate treatment but declined subsequently. Our findings contrasted with those of studies conducted in Western populations. Further prospective studies are suggested so as to elucidate the actual BMD trends and fracture risk reduction in Asian women on bisphosphonate treatment.

Effect of hydrophilicity of carbon nanotube arrays on the release rate and activity of recombinant human bone morphogenetic protein-2

Novel nanostructures such as vertically aligned carbon nanotube (CNT) arrays have received increasing interest as drug delivery carriers. In the present study, two CNT arrays with extreme surface wettabilities are fabricated and their effects on the release of recombinant human bone morphogenetic protein-2 (rhBMP-2) are investigated. It is found that the superhydrophilic arrays retained a larger amount of rhBMP-2 than the superhydrophobic ones. Further use of a poloxamer diffusion layer delayed the initial burst and resulted in a greater total amount of rhBMP-2 released from both surfaces. In addition, rhBMP-2 bound to the superhydrophilic CNT arrays remained bioactive while they denatured on the superhydrophobic surfaces. These results are related to the combined effects of rhBMP-2 molecules interacting with poloxamer and the surface, which could be essential in the development of advanced carriers with tailored surface functionalities.

Dewetting of polymer films by ion implantation

We report dewetting of thermodynamically stable, thick (approximately 100 nm) polystyrene films by titanium ion implantation. The dynamic dewetting patterns in time evolution are recorded. The dewetting mechanism is determined to be heterogeneous nucleation, where the defects and Ti nanoparticles formed by ion implantation serve as the nuclei. In addition, we observe abundant rims with regular polygonal shapes in dewetting patterns. This is attributed to fingering instability, which results from the balance between the driving force arisen from thermally induced surface tension gradient and the resistive forces from the combination of friction force, Laplace pressure and long-range van der Waals interactions. Finally, a model based on mass conservation is used to qualitatively describe the transition from circular to polygonal shaped rims at a critical diameter for holes.

Abrupt stress induced transformation in amorphous carbon films with a highly conductive transition phase

We demonstrate that when, and only when, the biaxial stress is increased above a critical value of 6+/-1 GPa during the growth of a carbon film at room temperature, tetrahedral amorphous carbon is formed. This confirms that the stress present during the formation of an amorphous carbon film determines its sp;{3} bonding fraction. In the vicinity of the critical stress, a highly oriented graphitelike material is formed which exhibits low electrical resistance and provides Ohmic contacts to silicon. Atomistic simulations reveal that the structural transitions are thermodynamically driven and not the result of dynamical effects.

A novel amperometric biosensor based on ZnO:Co nanoclusters for biosensing glucose

ZnO:Co nanoclusters were synthesized by nanocluster-beam deposition with averaged particle size of 5 nm and porous structure, which were for the first time adopted to construct a novel amperometric glucose biosensor. Glucose oxidase was immobilized into the ZnO:Co nanocluster-assembled thin film through Nafion-assisted cross-linking technique. Due to the high specific active sites and high electrocatalytic activity of the ZnO:Co nanoclusters, the constructed glucose biosensor showed a high sensitivity of 13.3 microA/mA cm2. The low detection limit was estimated to be 20 microM (S/N=3) and the apparent Michaelis-Menten constant was found to be 21 mM, indicating the high affinity of the enzyme on ZnO:Co nanoclusters to glucose. The results show that the ZnO:Co nanocluster-assembled thin films with nanoporous structure and nanocrystallites have potential applications as platforms to immobilize enzyme in biosensors.

Multilayer assembly of positively charged polyelectrolyte and negatively charged glucose oxidase on a 3D Nafion network for detecting glucose

In this paper, a novel amperometric glucose biosensor was constructed by alternative self-assembly of positively charged poly(diallydimethylammonium chloride) (PDDA) and negatively charged glucose oxidase (GOx) onto a 3D Nafion network via electrostatic adsorption. The amount of Nafion in the electrode and the number of the (PDDA/GOx)(n) multilayers were optimized to develop a sensitive and selective glucose biosensor. Under optimal conditions, the glucose biosensor with (PDDA/GOx)(5) multilayers exhibited remarkable electrocatalytic activity, capable of detecting glucose with enhanced sensitivity of 9.55 microA/mM cm(2) and a commendably low detection limit of 20 microM (S/N=3). A linear response range of 0.05-7 mM (a linear correlation coefficient of 0.9984, n=20) was achieved. In addition, the glucose biosensor demonstrated superior selectivity towards glucose over some interferents, such as ascorbic acid (AA) and uric acid (UA), at an optimized detection potential of 0.6 V versus Ag/AgCl reference.

Enhanced field emission from injector-like ZnO nanostructures with minimized screening effect

Injector-like zinc oxide (ZnO) nanostructures have been synthesized on Si substrate by the vapour phase transport method. Samples with different areal densities were obtained by controlling the temperature. The field emission properties of the injector-like ZnO nanostructures showed a clear dependence on the areal density of the nanostructures, which is due to the screening effect. The samples with a needle length of 850 nm and an areal density of 1 × 10(8) cm(-2) showed the lowest field emission turn-on field of 1.85 V µm(-1) at a current density of 10 µA cm(-2), and the current density reaches 1 mA cm(-2) at an applied field of 4.7 V µm(-1).

Dispersing and functionalizing multiwalled carbon nanotubes in TiO2 sol

We report that oxidized multiwalled carbon nanotubes (MWCNTs) can be synchronously dispersed and functionalized in TiO2 sol via an in situ sol-gel process. Transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and atomic force microscopy (AFM) were used to characterize the functionalized MWCNTs. The results revealed that the hydrolysis and condensation originated from Ti(OC4H9)4 molecules favor the dispersion of MWCNTs in as-prepared TiO2 sol. Based on the strong interaction between the oxidized MWCNTs and TiO2 sol during the in situ sol-gel process, MWCNT (core)-TiOx (shell) tubular composites and TiO2 nanotubes can be obtained through filtrating, washing, and annealing of this kind of TiO2 sol containing functionalized MWCNTs, as revealed by TEM, XPS, Raman spectroscopy, and redispersion experiment. By casting the dilute dispersion of functionalized MWCNTs onto a hydrophilic Si surface, discrete and individual nanotubes can be observed by AFM.

A comparison of teriparatide and calcitonin therapy in postmenopausal Asian women with osteoporosis: a 6-month study

OBJECTIVE

The number of hip fractures is expected to double in the next 20 years, with current estimates that Asia will account for 37% of these cases. As bone mineral density (BMD) may be used as a measure of fracture risk, we sought to compare the effects of teriparatide with salmon calcitonin treatment on changes in BMD, biochemical bone markers, and safety in postmenopausal Asian women with osteoporosis.

METHODOLOGY

A total of 104 patients (n = 47 teriparatide [20 g/day subcutaneously] and n = 57 calcitonin [100 IU/day subcutaneously]) were enrolled in Hong Kong, Singapore, Philippines, Malaysia, and Thailand. Calcium (> or = 500 mg/day) and vitamin D (200-400 IU/day) supplements were taken throughout the 6-month controlled, randomized study.

RESULTS

Teriparatide was associated with a 5.03 +/- 4.77% increase in lumbar spine BMD (p < 0.0001, mean +/- SD change from baseline), whereas changes in lumbar spine BMD for patients on calcitonin were not statistically significant (mean change of 0.36 +/- 4.12%, p = 0.16). Comparison of the two groups indicated that teriparatide treatment improved lumbar spine BMD statistically significantly more than calcitonin (p < 0.0001). No statistically significant changes were observed for total hip or femoral neck BMD. Serum bone-specific alkaline phosphatase (BSAP) increased by 55.9% (median change from baseline, p < 0.0001) in the teriparatide group, and remained stable with calcitonin (5.0% change, p = 0.24); osteocalcin increased by 156.15% (median change from baseline, p < 0.0001) with teriparatide, and decreased with calcitonin (-15.25%, p = 0.03). Similar rates of adverse events were observed, with nausea and dizziness the most commonly reported for both groups (teriparatide versus calcitonin, 13.0% versus 23.2% p = 0.21, 10.9% versus 21.4% p = 0.19, respectively). There were no clinically relevant changes observed in laboratory parameters.

CONCLUSIONS

Both treatments were similarly tolerated, however teriparatide was associated with greater increases in lumbar spine BMD and bone formation markers, demonstrating the unique mechanism of action and safety of this treatment for osteoporosis in these Asian women.

Comparing 2-year outcomes of anterior cruciate ligament reconstruction using either patella-tendon or semitendinosus-tendon autografts: a non-randomised prospective study

PURPOSE

To compare the results of anterior cruciate ligament (ACL) reconstructions using either a patella-tendon autograft or a semitendinosus-tendon autograft.

METHODS

Based on surgeon experience and preference, 68 patients underwent ACL reconstruction using either a quadruple-strand semitendinosus autograft (n = 34) or a central one-third bone-patella tendon-bone autograft (n = 34). Each patient was assessed preoperatively and postoperatively at 3, 6, and 24 months using the International Knee Documentation Committee (IKDC) knee score, Biodex muscle strength and endurance testing, and the KT1000 instrumented arthrometer test of knee laxity to anterior translation. All assessments at the 2-year follow-up were performed by the same physician and physiotherapist.

RESULTS

While ACL reconstruction improved knee stability and IKDC knee scores significantly, there was no statistically significant difference between semitendinosus- and patella-tendon autograft reconstructions in terms of long-term knee score or laxity to anterior translation. Semitendinosus graft reconstruction was associated with less donor-site morbidity and hamstring weakness. Meniscectomy was associated with poorer long-term knee scores.

CONCLUSION

ACL reconstruction is associated with a significantly better IKDC knee score and laxity measurement at 2-year follow-up. However, we were unable to demonstrate a significantly better long-term outcome in knee score or laxity to anterior translation with either a patella-tendon autograft or a semitendinosus-tendon autograft.