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Wang G, Yang B, Mei S, Wang B, Zhang Z, Mao Y, Guo J, Ma G, Guo R, Xing G. Persistent Charging of CsPbBr 3 Perovskite Nanocrystals Confined in Glass Matrix. Small 2024; 20:e2307785. [PMID: 38054790 DOI: 10.1002/smll.202307785] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2023] [Revised: 11/09/2023] [Indexed: 12/07/2023]
Abstract
Manipulation of persistent charges in semiconductor nanostructure is the key point to obtain quantum bits towards the application of quantum memory and information devices. However, realizing persistent charge storage in semiconductor nano-systems is still very challenge due to the disturbance from crystal defects and environment conditions. Herein, the two-photon persistent charging induced long-lasting afterglow and charged exciton formation are observed in CsPbBr3 perovskite nanocrystals (NCs) confined in glass host with effective lifetime surpassing one second, where the glass inclosure provides effective protection. A method combining the femtosecond and second time-resolved transient absorption spectroscopy is explored to determine the persistent charging possibility of perovskite NCs unambiguously. Meanwhile, with temperature-dependent spectroscopy, the underlying mechanism of this persistent charging is elucidated. A two-channel carrier transfer model is proposed involving athermal quantum tunneling and slower thermal-assisted channel. On this basis, two different information storage devices are demonstrated with the memory time exceeding two hours under low-temperature condition. These results provide a new strategy to realize persistent charging in perovskite NCs and deepen the understanding of the underlying carrier kinetics, which may pave an alternative way towards novel information memory and optical data storage applications.
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Affiliation(s)
- Gang Wang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao, 999078, China
| | - Bobo Yang
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Shiliang Mei
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao, 999078, China
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Bingzhe Wang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao, 999078, China
| | - Zhipeng Zhang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao, 999078, China
| | - Yulin Mao
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao, 999078, China
| | - Jia Guo
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao, 999078, China
| | - Guohong Ma
- Department of Physics, Shanghai University, Shanghai, 200444, China
| | - Ruiqian Guo
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao, 999078, China
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