Transfer-free growth of few-layer graphene by self-assembled monolayers

Two-Step Thermal Transformation of Multilayer Graphene Using Polymeric Carbon Source Assisted by Physical Vapor Deposited Copper

Direct in situ growth of graphene on dielectric substrates is a reliable method for overcoming the challenges of complex physical transfer operations, graphene performance degradation, and compatibility with graphene-based semiconductor devices. A transfer-free graphene synthesis based on a controllable and low-cost polymeric carbon source is a promising approach for achieving this process. In this paper, we report a two-step thermal transformation method for the copper-assisted synthesis of transfer-free multilayer graphene. Firstly, we obtained high-quality polymethyl methacrylate (PMMA) film on a 300 nm SiO2/Si substrate using a well-established spin-coating process. The complete thermal decomposition loss of PMMA film was effectively avoided by introducing a copper clad layer. After the first thermal transformation process, flat, clean, and high-quality amorphous carbon films were obtained. Next, the in situ obtained amorphous carbon layer underwent a second copper sputtering and thermal transformation process, which resulted in the formation of a final, large-sized, and highly uniform transfer-free multilayer graphene film on the surface of the dielectric substrate. Multi-scale characterization results show that the specimens underwent different microstructural evolution processes based on different mechanisms during the two thermal transformations. The two-step thermal transformation method is compatible with the current semiconductor process and introduces a low-cost and structurally controllable polymeric carbon source into the production of transfer-free graphene. The catalytic protection of the copper layer provides a new direction for accelerating the application of graphene in the field of direct integration of semiconductor devices.

Ultrafast Growth of Uniform Multi-Layer Graphene Films Directly on Silicon Dioxide Substrates

To realize the applications of graphene in electronics, a large-scale, high-quality, and uniform graphene film should first be placed on the dielectric substrates. Challenges still remain with respect to the current methods for the synthesis graphene directly on the dielectric substrates via chemical vapor deposition, such as a low growth rate and poor quality. Herein, we present an ultrafast method for direct growth of uniform graphene on a silicon dioxide (SiO₂/Si) substrate using methanol as the only carbon source. A 1 × 1 cm² SiO₂/Si substrate square was almost fully covered with graphene within 5 min, resulting in a record growth rate of ~33.6 µm/s. This outcome is attributed to the quick pyrolysis of methanol, with the help of trace copper atoms. The as-grown graphene exhibited a highly uniform thickness, with a sheet resistance of 0.9–1.2 kΩ/sq and a hole mobility of up to 115.4 cm²/V·s in air at room temperature. It would be quite suitable for transparent conductive electrodes in electrophoretic displays and may be interesting for related industrial applications.

Seed-Assisted Synthesis of Graphene Films on Insulating Substrate

Synthesizing graphene at a large-scale and of high quality on insulating substrate is a prerequisite for graphene applications in electronic devices. Typically, graphene is synthesized and then transferred to the proper substrate for subsequent device preparation. However, the complicated and skilled transfer process involves some issues such as wrinkles, residual contamination and breakage of graphene films, which will greatly degrade its performance. Direct synthesis of graphene on insulating substrates without a transfer process is highly desirable for device preparation. Here, we report a simple, transfer-free method to synthesize graphene directly on insulating substrates (SiO₂/Si, quartz) by using a Cu layer, graphene oxide and Poly (vinyl alcohol) as the catalyst, seeds and carbon sources, respectively. Atomic force microscope (AFM), scanning electronic microscope (SEM) and Raman spectroscopy are used to characterize the interface of insulating substrate and graphene. The graphene films directly grown on quartz glass can attain a high transmittance of 92.8% and a low sheet resistance of 620 Ω/square. The growth mechanism is also revealed. This approach provides a highly efficient method for the direct production of graphene on insulating substrates.

Direct growth of graphene on rigid and flexible substrates: progress, applications, and challenges

Graphene has recently been attracting considerable interest because of its exceptional conductivity, mechanical strength, thermal stability, etc. Graphene-based devices exhibit high potential for applications in electronics, optoelectronics, and energy harvesting. In this paper, we review various growth strategies including metal-catalyzed transfer-free growth and direct-growth of graphene on flexible and rigid insulating substrates which are "major issues" for avoiding the complicated transfer processes that cause graphene defects, residues, tears and performance degradation in graphene-based functional devices. Recent advances in practical applications based on "direct-grown graphene" are discussed. Finally, several important directions, challenges and perspectives in the commercialization of 'direct growth of graphene' are also discussed and addressed.

Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices

Direct growth of graphene on dielectric substrates is a prerequisite to the development of graphene-based electronic and optoelectronic devices. However, the current graphene synthesis methods on dielectric substrates always involve a metal contamination problem, and the direct production of graphene patterns still remains unattainable and challenging. Herein, a semiconducting, germanium (Ge)-assisted, chemical vapor deposition approach is proposed to produce monolayer graphene directly on arbitrary dielectric substrates. By the prepatterning of a catalytic Ge layer, the graphene with desired pattern can be achieved conveniently and readily. Due to the catalysis of Ge, monolayer graphene is able to form on Ge-covered dielectric substrates including SiO₂ /Si, quartz glass, and sapphire substrates. Optimization of the process parameters leads to complete sublimation of the catalytic Ge layer during or immediately after formation of the monolayer graphene, enabling direct deposition of large-area and continuous graphene on dielectric substrates. The large-area, highly conductive graphene synthesized on a transparent dielectric substrate using the proposed approach has exhibited a wide range of applications, including in both defogger and thermochromic displays, as already successfully demonstrated here.

Controlled Chemical Synthesis in CVD Graphene

Due to the unique properties of graphene, single layer, bilayer or even few layer graphene peeled off from bulk graphite cannot meet the need of practical applications. Large size graphene with quality comparable to mechanically exfoliated graphene has been synthesized by chemical vapor deposition (CVD). The main development and the key issues in controllable chemical vapor deposition of graphene has been briefly discussed in this chapter. Various strategies for graphene layer number and stacking control, large size single crystal graphene domains on copper, graphene direct growth on dielectric substrates, and doping of graphene have been demonstrated. The methods summarized here will provide guidance on how to synthesize other two-dimensional materials beyond graphene.

The integration of graphene into microelectronic devices

Since 2004 the field of graphene research has attracted increasing interest worldwide. Especially the integration of graphene into microelectronic devices has the potential for numerous applications. Therefore, we summarize the current knowledge on this aspect. Surveys show that considerable progress was made in the field of graphene synthesis. However, the central issue consists of the availability of techniques suitable for production for the deposition of graphene on dielectric substrates. Besides, the encapsulation of graphene for further processing while maintaining its properties poses a challenge. Regarding the graphene/metal contact intensive research was done and recently substantial advancements were made towards contact resistances applicable for electronic devices. Generally speaking the crucial issues for graphene integration are identified today and the corresponding research tasks can be clearly defined.

Transfer-Free Growth of Multilayer Graphene Using Self-Assembled Monolayers

Large-area graphene needs to be directly synthesized on the desired substrates without using a transfer process so that it can easily be used in industrial applications. However, the development of a direct method for graphene growth on an arbitrary substrate remains challenging. Here, we demonstrate a bottom-up and transfer-free growth method for preparing multilayer graphene using a self-assembled monolayer (trimethoxy phenylsilane) as the carbon source. Graphene was directly grown on various substrates such as SiO₂/Si, quartz, GaN, and textured Si by a simple thermal annealing process employing catalytic metal encapsulation. To determine the optimal growth conditions, experimental parameters such as the choice of catalytic metal, growth temperatures, and gas flow rate were investigated. The optical transmittance at 550 nm and the sheet resistance of the prepared transfer-free graphene are 84.3% and 3500 Ω/□, respectively. The synthesized graphene samples were fabricated into chemical sensors. High and fast responses to both NO₂ and NH₃ gas molecules were observed. The transfer-free graphene growth method proposed in this study is highly compatible with previously established fabrication systems, thereby opening up new possibilities for using graphene in versatile applications.

Catalyst-free bottom-up growth of graphene nanofeatures along with molecular templates on dielectric substrates

Synthesis of graphene nanostructures has been investigated to provide outstanding properties for various applications. Herein, we report molecular thin film-assisted growth of graphene into nanofeatures such as nanoribbons and nanoporous sheets along with a predetermined molecular orientation on dielectric substrates without metal catalysts. A Langmuir-Blodgett (LB) method was used for the formation of the molecularly patterned SiO₂ substrates with ferric stearate layers, which acted as a template for the directional growth of the polypyrrole graphene precursor. The nanofeatures of the graphene were determined by the number of ferric stearate layers (e.g., nanoribbons from multiple layers and nanoporous sheets from a single layer). The graphene nanoribbons (GNRs) containing pyrrolic N enriched edges exhibited a p-type semiconducting behavior, whereas the nanoporous graphene sheets containing inhomogeneous pores and graphitic N enriched basal planes exhibited the typical electronic transport of nitrogen-doped graphene. Our approaches provide two central methods for graphene synthesis such as bottom-up and direct processes for the future development of graphene nanoelectronics.

One-Minute Room-Temperature Transfer-Free Production of Mono- and Few-Layer Polycrystalline Graphene on Various Substrates

Graphene deposited on various substrates has attracted the attention of the scientific and technical communities for use in a wide range of applications. Graphene on substrates is commonly produced by two types of methods, namely, methods that require a transfer step and transfer-free methods. Compared with methods that require a transfer step, transfer-free methods have a simpler procedure and a lower cost. Thus, transfer-free methods have considerable potential to meet the industrial and commercial demands of production methods. However, some limitations of the current transfer-free methods must be overcome, such as the high temperatures encountered during production, the relatively long manufacturing times, incompatibilities for both rigid and flexible substrates, and an inability to extend the process to other two-dimensional (2-D) atomic crystals. In this work, a room-temperature rubbing method is developed for the rapid transfer-free production of defect-free polycrystalline graphene on rigid and flexible substrates. Starting with inexpensive commercially obtained graphite powder, mono- and few-layer graphene can be fabricated directly on various substrates, with an average production time of less than one minute (from raw graphite to graphene on the substrate). Importantly, this method can be extended to other 2-D atomic crystals.

Highly conductive graphene-bonded polyimide yarns for flexible electronics

Graphene-bonded PI yarns were achieved by a large-scale dip-reduction process with alkali treatment. The composite yarns have high conductivity, good durability and can effectively serve as a conductor wire and the electrodes of the supercapacitor.

Direct preparation of high quality graphene on dielectric substrates

Recent advances in the field of the direct growth of graphene on dielectric substrates are described.

Value-added Synthesis of Graphene: Recycling Industrial Carbon Waste into Electrodes for High-Performance Electronic Devices

We have developed a simple, scalable, transfer-free, ecologically sustainable, value-added method to convert inexpensive coal tar pitch to patterned graphene films directly on device substrates. The method, which does not require an additional transfer process, enables direct growth of graphene films on device substrates in large area. To demonstrate the practical applications of the graphene films, we used the patterned graphene grown on a dielectric substrate directly as electrodes of bottom-contact pentacene field-effect transistors (max. field effect mobility ~0.36 cm²·V⁻¹·s⁻¹), without using any physical transfer process. This use of a chemical waste product as a solid carbon source instead of commonly used explosive hydrocarbon gas sources for graphene synthesis has the dual benefits of converting the waste to a valuable product, and reducing pollution.

CVD-Enabled Graphene Manufacture and Technology

Integrated manufacturing is arguably the most challenging task in the development of technology based on graphene and other 2D materials, particularly with regard to the industrial demand for “electronic-grade” large-area films. In order to control the structure and properties of these materials at the monolayer level, their nucleation, growth and interfacing needs to be understood to a level of unprecedented detail compared to existing thin film or bulk materials. Chemical vapor deposition (CVD) has emerged as the most versatile and promising technique to develop graphene and 2D material films into industrial device materials and this Perspective outlines recent progress, trends, and emerging CVD processing pathways. A key focus is the emerging understanding of the underlying growth mechanisms, in particular on the role of the required catalytic growth substrate, which brings together the latest progress in the fields of heterogeneous catalysis and classic crystal/thin-film growth.

Transfer-free synthesis of doped and patterned graphene films

High-quality and wafer-scale graphene on insulating gate dielectrics is a prerequisite for graphene electronic applications. For such applications, graphene is typically synthesized and then transferred to a desirable substrate for subsequent device processing. Direct production of graphene on substrates without transfer is highly desirable for simplified device processing. However, graphene synthesis directly on substrates suitable for device applications, though highly demanded, remains unattainable and challenging. Here, we report a simple, transfer-free method capable of synthesizing graphene directly on dielectric substrates at temperatures as low as 600 °C using polycyclic aromatic hydrocarbons as the carbon source. Significantly, N-doping and patterning of graphene can be readily and concurrently achieved by this growth method. Remarkably, the graphene films directly grown on glass attained a small sheet resistance of 550 Ω/sq and a high transmittance of 91.2%. Organic light-emitting diodes (OLEDs) fabricated on N-doped graphene on glass achieved a current density of 4.0 mA/cm(2) at 8 V compared to 2.6 mA/cm(2) for OLEDs similarly fabricated on indium tin oxide (ITO)-coated glass, demonstrating that the graphene thus prepared may have potential to serve as a transparent electrode to replace ITO.

Synthesis of flake-like graphene from nickel-coated polyacrylonitrile polymer

Graphene can be synthesized from polyacrylonitrile (PAN) polymer through pyrolysis. A metal catalyst such as nickel (Ni) is required for the conversion of the polymer to graphene. The metal catalysts can be placed either atop or underneath the polymer precursor. We observed that spatially non-uniform and disconnected graphene was fabricated when PAN film coated with a Ni layer was pyrolyzed, resulting in flake-like graphene. Formation of the flake-like graphene is attributed to the dewetting of the Ni layer coated on the PAN film. Dewetting phenomenon can be reduced by decreasing the pyrolysis temperature, and hence, more uniform graphene could be prepared. The effects of Ni coating thickness and the pyrolysis temperature on the fabricated graphene have been experimentally analyzed.

Direct growth of patterned graphene on SiO2 substrates without the use of catalysts or lithography

We demonstrate a one-step fabrication of patterned graphene on SiO2 substrates through a process free from catalysts, transfer, and lithography. By simply placing a shadow mask during the plasma enhanced chemical vapor deposition (PECVD) of graphene, an arbitrary shape of graphene can be obtained on SiO2 substrate. The formation of graphene underneath the shadow mask was effectively prevented by the low-temperature, catalyst-free process. Growth conditions were optimized to form polycrystalline graphene on SiO2 substrates and the crystalline structure was characterized by Raman spectroscopy and transmission electron microscopy (TEM). Patterned graphene on SiO2 functions as a field-effect device by itself. Our method is compatible with present device processing techniques, and should be highly desirable for the proliferation of graphene applications.

Graphene-nickel interfaces: a review

Graphene on nickel is a prototypical example of an interface between graphene and a strongly interacting metal, as well as a special case of a lattice matched system. The chemical interaction between graphene and nickel is due to hybridization of the metal d-electrons with the π-orbitals of graphene. This interaction causes a smaller separation between the nickel surface and graphene (0.21 nm) than the typical van der Waals gap-distance between graphitic layers (0.33 nm). Furthermore, the physical properties of graphene are significantly altered. Main differences are the opening of a band gap in the electronic structure and a shifting of the π-band by ∼2 eV below the Fermi-level. Experimental evidence suggests that the ferromagnetic nickel induces a magnetic moment in the carbon. Substrate induced geometric and electronic changes alter the phonon dispersion. As a consequence, monolayer graphene on nickel does not exhibit a Raman spectrum. In addition to reviewing these fundamental physical properties of graphene on Ni(111), we also discuss the formation and thermal stability of graphene and a surface-confined nickel-carbide. The fundamental growth mechanisms of graphene by chemical vapor deposition are also described. Different growth modes depending on the sample temperature have been identified in ultra high vacuum surface science studies. Finally, we give a brief summary for the synthesis of more complex graphene and graphitic structures using nickel as catalyst and point out some potential applications for graphene-nickel interfaces.

Introducing carbon diffusion barriers for uniform, high-quality graphene growth from solid sources

Carbon diffusion barriers are introduced as a general and simple method to prevent premature carbon dissolution and thereby to significantly improve graphene formation from the catalytic transformation of solid carbon sources. A thin Al2O3 barrier inserted into an amorphous-C/Ni bilayer stack is demonstrated to enable growth of uniform monolayer graphene at 600 °C with domain sizes exceeding 50 μm, and an average Raman D/G ratio of <0.07. A detailed growth rationale is established via in situ measurements, relevant to solid-state growth of a wide range of layered materials, as well as layer-by-layer control in these systems.

Transfer-free synthesis of multilayer graphene using a single-step process in an evaporator and formation confirmation by laser mode-locking

Multilayer graphene is synthesized by a simplified process employing an evaporator in which a target substrate is deposited with a Ni catalyst layer before being heated to grow graphene directly. Carbon atoms adsorbed onto the surface of the Ni source as impurities from the atmosphere are incorporated into the catalyst layer during the deposition, and diffuse toward the catalyst/substrate interface, where they crystallize as graphene with a thickness of less than 2 nm. The need for a transfer process and external carbon supply is eliminated. The graphene is characterized by conventional analysis approaches, including nano-scale visualization and Raman spectroscopy, and utilizing photonics, graphene-functionalized passive laser mode-locking is demonstrated to confirm the successful synthesis of the graphene layer, resulting in an operating center wavelength of 1569.4 nm, a pulse duration of 1.35 ps, and a repetition rate of 31.6 MHz.

Two-stage metal-catalyst-free growth of high-quality polycrystalline graphene films on silicon nitride substrates

By using two-stage, metal-catalyst-free chemical vapor deposition (CVD), it is demonstrated that high-quality polycrystalline graphene films can directly grow on silicon nitride substrates. The carrier mobility can reach about 1500 cm(2) V(-1) s(-1) , which is about three times the value of those grown on SiO(2) /Si substrates, and also is better than some examples of metal-catalyzed graphene, reflecting the good quality of the graphene lattice.

Graphene film growth on polycrystalline metals

Graphene, a true wonder material, is the newest member of the nanocarbon family. The continuous network of hexagonally arranged carbon atoms gives rise to exceptional electronic, mechanical, and thermal properties, which could result in the application of graphene in next generation electronic components, energy-storage materials such as capacitors and batteries, polymer nanocomposites, transparent conducting electrodes, and mechanical resonators. With one particularly attractive application, optically transparent conducting electrodes or films, graphene has the potential to rival indium tin oxide (ITO) and become a material for producing next generation displays, solar cells, and sensors. Typically, graphene has been produced from graphite using a variety of methods, but these techniques are not suitable for growing large-area graphene films. Therefore researchers have focused much effort on the development of methodology to grow graphene films across extended surfaces. This Account describes current progress in the formation and control of graphene films on polycrystalline metal surfaces. Researchers can grow graphene films on a variety of polycrystalline metal substrates using a range of experimental conditions. In particular, group 8 metals (iron and ruthenium), group 9 metals (cobalt, rhodium, and iridium), group 10 metals (nickel and platinum), and group 11 metals (copper and gold) can support the growth of these films. Stainless steel and other commercial copper-nickel alloys can also serve as substrates for graphene film growth. The use of copper and nickel currently predominates, and these metals produce large-area films that have been efficiently transferred and tested in many electronic devices. Researchers have grown graphene sheets more than 30 in. wide and transferred them onto display plastic ready for incorporation into next generation displays. The further development of graphene films in commercial applications will require high-quality, reproducible growth at ambient pressure and low temperature from cheap, readily available carbon sources. The growth of graphene on metal surfaces has drawbacks: researchers must transfer the graphene from the metal substrate or remove the metal by etching. Further research is needed to overcome these transfer and removal challenges.

Few layer graphene to graphitic films: infrared photoconductive versus bolometric response

We report a comparative study of the performance of infrared (IR) photoconductive and bolometric detectors fabricated from few layer graphene (FLG) to graphitic films obtained by different methods. FLG films grown directly on insulating substrates with the aid of residual hydrocarbons and polymethylmethacrylate (PMMA) carbon sources show an IR photoresponse of 73% which is far higher compared to the FLG films (6-14%) obtained by CVD and Scotch tape methods. The photoconductive nature of FLG films is due to generation of photoexcited charge carriers. On the other hand, the photoresponse of the bulk graphitic films is bolometric in nature where the resistance changes are due to thermal effects. The IR photoresponse from these graphitic films is correlated with the Raman peak intensities which are very sensitive to the nature of the FLG.

Graphene synthesis: relationship to applications

Graphene is a true wonder material that promises much in a variety of applications that include electronic devices, supercapacitors, batteries, composites, flexible transparent displays and sensors. This review highlights the different methods available for the synthesis of graphene and discusses the viability and practicalities of using the materials produced via these methods for different graphene-based applications.

Field effect transistors and photodetectors based on nanocrystalline graphene derived from electron beam induced carbonaceous patterns

We describe a transfer-free method for the fabrication of nanocrystalline graphene (nc-graphene) on SiO(2) substrates directly from patterned carbonaceous deposits. The deposits were produced from the residual hydrocarbons present in the vacuum chamber without any external source by using an electron beam induced carbonaceous deposition (EBICD) process. Thermal treatment under vacuum conditions in the presence of Ni catalyst transformed the EBIC deposit into nc-graphene patterns, confirmed using Raman and TEM analysis. The nc-graphene patterns have been employed as an active p-type channel material in a field effect transistor (FET) which showed a hole mobility of ~90 cm(2) V(-1) s(-1). The nc-graphene also proved to be suitable material for IR detection.

Graphene transfer: key for applications

The first micrometer-sized graphene flakes extracted from graphite demonstrated outstanding electrical, mechanical and chemical properties, but they were too small for practical applications. However, the recent advances in graphene synthesis and transfer techniques have enabled various macroscopic applications such as transparent electrodes for touch screens and light-emitting diodes (LEDs) and thin-film transistors for flexible electronics in particular. With such exciting potential, a great deal of effort has been put towards producing larger size graphene in the hopes of industrializing graphene production. Little less than a decade after the first discovery, graphene now can be synthesized up to 30 inches in its diagonal size using chemical vapour deposition methods. In making this possible, it was not only the advances in the synthesis techniques but also the transfer methods that deliver graphene onto target substrates without significant mechanical damage. In this article, the recent advancements in transferring graphene to arbitrary substrates will be extensively reviewed. The methods are categorized into mechanical exfoliation, polymer-assisted transfer, continuous transfer by roll-to-roll process, and transfer-free techniques including direct synthesis on insulating substrates.

Controlled synthesis of bilayer graphene on nickel

We report a uniform and low-defect synthesis of bilayer graphene on evaporated polycrystalline nickel films. We used atmospheric pressure chemical vapor deposition with ultra-fast substrate cooling after exposure to methane at 1,000°C. The optimized process parameters, i.e., growth time, annealing profile and flow rates of various gases, are reported. By using Raman spectroscopy mapping, the ratio of 2D to G peak intensities (I2D/IG) is in the range of 0.9 to 1.6 over 96% of the 200 μm × 200 μm area. Moreover, the average ratio of D to G peak intensities (ID/IG) is about 0.1.

Direct growth and patterning of multilayer graphene onto a targeted substrate without an external carbon source

Using only a simple tube furnace, we demonstrate the synthesis of patterned graphene directly on a designed substrate without the need for an external carbon source. Carbon atoms are absorbed onto Ni evaporator sources as impurities, and incorporated into catalyst layers during the deposition. Heat treatment conditions were optimized so that the atoms diffused out along the grain boundaries to form nanocrystals at the catalyst-substrate interfaces. Graphene patterns were obtained under patterned catalysts, which restricted graphene formation to within patterned areas. The resultant multilayer graphene was characterized by Raman spectroscopy and transmission electron microscopy to verify the high crystallinity and two-dimensional nanomorphology. Finally, a metal-semiconductor diode with a catalyst-graphene contact structure were fabricated and characterized to assess the semiconducting properties of the graphene sheets with respect to the display of asymmetric current-voltage behavior.

Ultrafast optical nonlinearity of multi-layered graphene synthesized by the interface growth process

We propose a novel photonic application as well as an optical tool to verify the crystallinity of interface-grown graphene demonstrating passive mode-locked lasers. The interface growth process enables the formation of multi-layered graphene at an interface of substrate and catalyst, therefore directly onto the targeted substrate without a transfer process. The synthesized graphene is characterized using Raman spectroscopy and x-ray photoelectron spectroscopy before ultrashort pulse formation to confirm the validity of the process for high-speed photonic applications of graphene. The resultant pulses have a repetition rate, pulse duration, RF extinction ratio of 14.01 MHz, 1.0 ps, and ∼35 dB, respectively.