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Chen H, Jiang S, Huang L, Man P, Deng Q, Zhao J, Ly TH. Large-Area Aligned Growth of Low-Symmetry 2D ReS 2 on a High-Symmetry Surface. ACS NANO 2024; 18:35029-35038. [PMID: 39658962 DOI: 10.1021/acsnano.4c14162] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/12/2024]
Abstract
The large-scale preparation of two-dimensional (2D) materials is pivotal in unlocking their extensive potential for next-generation semiconductor device applications. Wafer-scale single crystals of a high-symmetry 2D material (e.g., graphene and molybdenum disulfide) can be achieved by seamlessly stitching the aligned domains. However, achieving the alignment of low-symmetry 2D materials remains a great challenge and is rarely reported. Rhenium disulfide (ReS2), one of the low-symmetry 2D materials, shows considerable promise for optoelectronics, especially polarization-sensitive applications. Here, we report large-area chemical vapor deposition synthesis of highly oriented, low-symmetry monolayer ReS2 flakes on a high-symmetry Au(111) surface, followed by seamless stitching into a centimeter-scale continuous 2D film. Cross-sectional scanning transmission electron microscopy reveals that the aligned monolayer ReS2 flakes are guided by step edges on Au(111) surfaces along the [011̅] direction. Additionally, 2D ReS2 can flatten Au surfaces during its growth through surface step bunching. The growth of the ReS2 monolayer demonstrates its ability to extend across Au surface steps and facets. Thus, we have established a reliable and robust synthesis route that accommodates different surface roughness conditions. The aligned and scalable film growth of low-symmetry 2D ReS2 significantly contributes to the in-depth understanding of epitaxial growth mechanisms for low-symmetry 2D materials, holding promise for advancing their future applications.
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Affiliation(s)
- Honglin Chen
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, China
| | - Shan Jiang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, China
| | - Lingli Huang
- Department of Chemistry and Center of Super-Diamond & Advanced Films, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518000, China
| | - Ping Man
- Department of Chemistry and Center of Super-Diamond & Advanced Films, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518000, China
| | - Qingming Deng
- Physics Department and Jiangsu Key Laboratory for Chemistry of Low-Dimensional Materials, Huaiyin Normal University, Huaian 223300, China
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518000, China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518000, China
- State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong 999077, China
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2
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Zulkepli N, Yunas J, Mohammad Haniff MAS, Dedi, Sirat MS, Johari MH, Mohd Maidin NN, Mohd Raub AA, Hamzah AA. Synthesis and Characterization of SiO 2-Based Graphene Nanoballs Using Copper-Vapor-Assisted APCVD for Thermoelectric Application. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:618. [PMID: 38607152 PMCID: PMC11013761 DOI: 10.3390/nano14070618] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2023] [Revised: 06/23/2023] [Accepted: 07/10/2023] [Indexed: 04/13/2024]
Abstract
This study describes a method by which to synthesize SiO2-based graphene nanoballs (SGB) using atmospheric pressure chemical vapor deposition (APCVD) with copper vapor assistance. This method should solve the contamination, damage, and high costs associated with silica-based indirect graphene synthesis. The SGB was synthesized using APCVD, which was optimized using the Taguchi method. Multiple synthesis factors were optimized and investigated to find the ideal synthesis condition to grow SGB for thermoelectric (TE) applications. Raman spectra and FESEM-EDX reveal that the graphene formed on the silicon nanoparticles (SNP) is free from copper. The prepared SGB has excellent electrical conductivity (75.0 S/cm), which shows better results than the previous report. Furthermore, the SGB nanofillers in bismuth telluride (Bi2Te3) nanocomposites as TE materials exhibit a significant increment in Seebeck coefficients (S) compared to the pure Bi2Te3 sample from 109 to 170 μV/K at 400 K, as well as electrical resistivity decrement. This approach would offer a simple strategy to improve the TE performance of commercially available TE materials, which is critical for large-scale industrial applications.
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Affiliation(s)
- Nurkhaizan Zulkepli
- Institute of Microengineering and Nanoelectronic (IMEN), Universiti Kebangsaan Malaysia (UKM), Bangi 46300, Selangor, Malaysia; (N.Z.); (M.A.S.M.H.); (M.S.S.); (M.H.J.); (N.N.M.M.); (A.A.M.R.)
- Centre of Foundation Studies, Universiti Teknologi MARA, Cawangan Selangor, Kampus Dengkil, Dengkil 43800, Selangor, Malaysia
| | - Jumril Yunas
- Institute of Microengineering and Nanoelectronic (IMEN), Universiti Kebangsaan Malaysia (UKM), Bangi 46300, Selangor, Malaysia; (N.Z.); (M.A.S.M.H.); (M.S.S.); (M.H.J.); (N.N.M.M.); (A.A.M.R.)
| | - Muhammad Aniq Shazni Mohammad Haniff
- Institute of Microengineering and Nanoelectronic (IMEN), Universiti Kebangsaan Malaysia (UKM), Bangi 46300, Selangor, Malaysia; (N.Z.); (M.A.S.M.H.); (M.S.S.); (M.H.J.); (N.N.M.M.); (A.A.M.R.)
| | - Dedi
- Research Center for Advanced Materials, National Research and Innovation Agency (BRIN), South Tangerang 15314, Banten, Indonesia;
| | - Mohamad Shukri Sirat
- Institute of Microengineering and Nanoelectronic (IMEN), Universiti Kebangsaan Malaysia (UKM), Bangi 46300, Selangor, Malaysia; (N.Z.); (M.A.S.M.H.); (M.S.S.); (M.H.J.); (N.N.M.M.); (A.A.M.R.)
| | - Muhammad Hilmi Johari
- Institute of Microengineering and Nanoelectronic (IMEN), Universiti Kebangsaan Malaysia (UKM), Bangi 46300, Selangor, Malaysia; (N.Z.); (M.A.S.M.H.); (M.S.S.); (M.H.J.); (N.N.M.M.); (A.A.M.R.)
| | - Nur Nasyifa Mohd Maidin
- Institute of Microengineering and Nanoelectronic (IMEN), Universiti Kebangsaan Malaysia (UKM), Bangi 46300, Selangor, Malaysia; (N.Z.); (M.A.S.M.H.); (M.S.S.); (M.H.J.); (N.N.M.M.); (A.A.M.R.)
| | - Aini Ayunni Mohd Raub
- Institute of Microengineering and Nanoelectronic (IMEN), Universiti Kebangsaan Malaysia (UKM), Bangi 46300, Selangor, Malaysia; (N.Z.); (M.A.S.M.H.); (M.S.S.); (M.H.J.); (N.N.M.M.); (A.A.M.R.)
| | - Azrul Azlan Hamzah
- Institute of Microengineering and Nanoelectronic (IMEN), Universiti Kebangsaan Malaysia (UKM), Bangi 46300, Selangor, Malaysia; (N.Z.); (M.A.S.M.H.); (M.S.S.); (M.H.J.); (N.N.M.M.); (A.A.M.R.)
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3
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Rivera-Tello CD, Guerrero JA, Huerta L, Flores-Ruiz FJ, Flores M, Quiñones-Galván JG. Influence of plasma kinetic energy during the pulsed laser deposition of borophene films on silicon (100). RSC Adv 2023; 13:29819-29829. [PMID: 37829715 PMCID: PMC10566584 DOI: 10.1039/d3ra04601j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Accepted: 09/25/2023] [Indexed: 10/14/2023] Open
Abstract
Developing borophene films with good structural stability on non-metallic substrates to maximize their potential in photosensitivity, gas detection, photothermia, energy storage, and deformation detection, among others has been challenging in recent years. Herein, we succeeded in the pulsed laser deposition of multilayered borophene films on Si (100) with β12 or χ3 bonding by tuning the mean kinetic energy in the plasma during the deposition process. Raman and X-ray photoelectron spectroscopies confirm β12 and χ3 bonding in the films. Borophene films with β12 bonding were obtained by tuning a high mean kinetic energy in the plasma, while borophene with χ3 bonding required a relatively low mean kinetic energy. Atomic force microscopy (AFM) micrographs revealed a granular and directional growth of the multilayered borophene films following the linear atomic terraces from the (100) silicon substrate. AFM nanofriction was used to access the borophene surfaces and to reveal the pull-off force and friction coefficient of the films where the surface oxide showed a significant contribution. To summarize, we show that it is possible to deposit multilayered borophene thin films with different bondings by tuning the mean kinetic energy during pulsed laser deposition. The characterization of the plasma during borophene deposition accompanies our findings, providing support for the changes in kinetic energy.
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Affiliation(s)
- César D Rivera-Tello
- Departamento de Ingeniería Mecánica Eléctrica, CUCEI, Universidad de Guadalajara Blvd. Marcelino García Barragán 1421, Olímpica Guadalajara Jalisco C.P. 44430 Mexico
| | - J A Guerrero
- Departamento de Ingeniería Mecánica Eléctrica, CUCEI, Universidad de Guadalajara Blvd. Marcelino García Barragán 1421, Olímpica Guadalajara Jalisco C.P. 44430 Mexico
| | - L Huerta
- Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México A. P. 70-360 04510 Ciudad de México Mexico
| | - Francisco J Flores-Ruiz
- CONAHCYT-Instituto de Física, Benemérita Universidad Autónoma de Puebla Ciudad Universitaria, Edif. IF-1 Puebla 72570 México
| | - M Flores
- Departamento de Ingeniería de Proyectos, Universidad de Guadalajara 45150 Zapopan Jalisco Mexico
| | - J G Quiñones-Galván
- Departamento de Física, CUCEI, Universidad de Guadalajara Blvd. Marcelino García Barragán 1421, Olímpica Guadalajara Jalisco C.P. 44430 Mexico
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Mendoza CD, Freire FL. Single-Layer Graphene/Germanium Interface Representing a Schottky Junction Studied by Photoelectron Spectroscopy. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2166. [PMID: 37570483 PMCID: PMC10420948 DOI: 10.3390/nano13152166] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2023] [Revised: 07/19/2023] [Accepted: 07/24/2023] [Indexed: 08/13/2023]
Abstract
We investigated the interfacial electronic structure of the bidimensional interface of single-layer graphene on a germanium substrate. The procedure followed a well-established approach using ultraviolet (UPS) and X-ray (XPS) photoelectron spectroscopy. The direct synthesis of the single-layer graphene on the surface of (110) undoped Ge substrates was conducted via chemical vapor deposition (CVD). The main graphitic properties of the systems were identified, and it was shown that the Ge substrate affected the electronic structure of the single-layer graphene, indicating the electronic coupling between the graphene and the Ge substrate. Furthermore, the relevant features associated with the Schottky contact's nature, the energy level's alignments, and the energy barrier's heights for electron and hole injection were obtained in this work. The results are useful, given the possible integration of single-layer graphene on a Ge substrate with the complementary metal-oxide-semiconductor (CMOS) technology.
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Affiliation(s)
- Cesar D. Mendoza
- Departamento de Física, Pontifícia Universidade Católica do Rio de Janeiro, Rio de Janeiro 22451-900, RJ, Brazil;
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Machon D, Sauze S, Arès R, Boucherif A. Probing the coupling between the components in a graphene-mesoporous germanium nanocomposite using high-pressure Raman spectroscopy. NANOSCALE ADVANCES 2021; 3:2577-2584. [PMID: 36134150 PMCID: PMC9419740 DOI: 10.1039/d1na00123j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/15/2021] [Accepted: 03/10/2021] [Indexed: 06/16/2023]
Abstract
The nature of the interface between the components of a nanocomposite is a major determining factor in the resulting properties. Using a graphene-mesoporous germanium nanocomposite with a core-shell structure as a template for complex graphene-based nanocomposites, an approach to quantify the interactions between the graphene coating and the component materials is proposed. By monitoring the pressure-induced shift of the Raman G-peak, the degree of coupling between the components, a parameter that is critical in determining the properties of a nanocomposite, can be evaluated. In addition, pressure-induced transformations are a way to tune the physical and chemical properties of materials, and this method provides an opportunity for the controlled design of nanocomposites.
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Affiliation(s)
- Denis Machon
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke 3000 Boulevard Université Sherbrooke J1K OA5 Québec Canada
- Laboratoire Nanotechnologies et Nanosystèmes (LN2), CNRS UMI-3463, Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke 3000 Boulevard Université Sherbrooke J1K OA5 Québec Canada
- Univ Lyon, Université Claude Bernard Lyon 1, CNRS UMR 5306, Institut Lumière Matière F-69622 Villeurbanne France
| | - Stéphanie Sauze
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke 3000 Boulevard Université Sherbrooke J1K OA5 Québec Canada
- Laboratoire Nanotechnologies et Nanosystèmes (LN2), CNRS UMI-3463, Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke 3000 Boulevard Université Sherbrooke J1K OA5 Québec Canada
| | - Richard Arès
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke 3000 Boulevard Université Sherbrooke J1K OA5 Québec Canada
- Laboratoire Nanotechnologies et Nanosystèmes (LN2), CNRS UMI-3463, Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke 3000 Boulevard Université Sherbrooke J1K OA5 Québec Canada
| | - Abderraouf Boucherif
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke 3000 Boulevard Université Sherbrooke J1K OA5 Québec Canada
- Laboratoire Nanotechnologies et Nanosystèmes (LN2), CNRS UMI-3463, Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke 3000 Boulevard Université Sherbrooke J1K OA5 Québec Canada
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6
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Jung SH, Seo YM, Gu T, Jang W, Kang SG, Hyeon Y, Hyun SH, Lee JH, Whang D. Super-Nernstian pH Sensor Based on Anomalous Charge Transfer Doping of Defect-Engineered Graphene. NANO LETTERS 2021; 21:34-42. [PMID: 33136414 DOI: 10.1021/acs.nanolett.0c02259] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The conventional pH sensor based on the graphene ion-sensitive field-effect transistor (Gr-ISFET), which operates with an electrostatic gating at the solution-graphene interface, cannot have a pH sensitivity above the Nernst limit (∼59 mV/pH). However, for accurate detection of the pH levels of an aqueous solution, an ultrasensitive pH sensor that can exceed the theoretical limit is required. In this study, a novel Gr-ISFET-based pH sensor is fabricated using proton-permeable defect-engineered graphene. The nanocrystalline graphene (nc-Gr) with numerous grain boundaries allows protons to penetrate the graphene layer and interact with the underlying pH-dependent charge-transfer dopant layer. We analyze the pH sensitivity of nc-Gr ISFETs by adjusting the grain boundary density of graphene and the functional group (OH-, NH2-, CH3-) on the SiO2 surface, confirming an unusual negative shift of the charge-neutral point (CNP) as the pH of the solution increases and a super-Nernstian pH response (approximately -140 mV/pH) under optimized conditions.
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Affiliation(s)
- Su-Ho Jung
- SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, South Korea
| | - Young-Min Seo
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, South Korea
| | - Taejun Gu
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, South Korea
| | - Wonseok Jang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, South Korea
| | - Seog-Gyun Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, South Korea
| | - Yuhwan Hyeon
- SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, South Korea
| | - Sang-Hwa Hyun
- Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon 16499, South Korea
| | - Jae-Hyun Lee
- Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon 16499, South Korea
| | - Dongmok Whang
- SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, South Korea
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, South Korea
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Sauze S, Aziziyan MR, Brault P, Kolhatkar G, Ruediger A, Korinek A, Machon D, Arès R, Boucherif A. Integration of 3D nanographene into mesoporous germanium. NANOSCALE 2020; 12:23984-23994. [PMID: 33094784 DOI: 10.1039/d0nr04937a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Graphene is a key material of interest for the modification of physicochemical surface properties. However, its flat surface is a limitation for applications requiring a high specific surface area. This restriction may be overcome by integrating 2D materials in a 3D structure. Here, a strategy for the controlled synthesis of Graphene-Mesoporous Germanium (Gr-MP-Ge) nanomaterials is presented. Bipolar electrochemical etching and chemical vapor infiltration were employed, respectively, for the nanostructuration of Ge substrate and subsequent 3D nanographene coating. While Raman spectroscopy reveals a tunable domain size of nanographene with the treatment temperature, transmission electron microscopy data confirm that the crystallinity of Gr-MP-Ge is preserved. X-ray photoelectron spectroscopy indicates the non-covalent bonding of carbon to Ge for Gr-MP-Ge. State-of-the-art molecular dynamics modeling provides a deeper understanding of the synthesis process through the presence of radicals. The successful synthesis of these nanomaterials offers the integration of nanographene into a 3D structure with a high aspect ratio and light weight, thereby opening avenues to a variety of applications for this versatile nanomaterial.
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Affiliation(s)
- Stéphanie Sauze
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5 Québec, Canada.
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Chen W, Wang X, Li S, Yan C, He L, Zhang P, Yang Y, Ma D, Nie J, Dou R. Robust atomic-structure of the 6 × 2 reconstruction surface of Ge(110) protected by the electronically transparent graphene monolayer. Phys Chem Chem Phys 2020; 22:22711-22718. [PMID: 33016301 DOI: 10.1039/d0cp03322g] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Wafer-scale growth of the unidirectional graphene monolayer on Ge surfaces has rejuvenated the intense study of the surfaces and interfaces of semiconductors underneath graphene. Recently, it was reported that the Ge atoms in the Ge(110) surface beneath a graphene monolayer underwent a rearrangement and formed an ordered (6 × 2) reconstruction. However, a plausible atomic model related to this (6 × 2) reconstruction is still lacking. Here, by using scanning tunnelling microscopy/spectroscopy (STM/S) and density functional theory (DFT) calculations, we deeply investigated the structural and electronic properties of the Ge(110) (6 × 2) surface encapsulated by a graphene monolayer. The (6 × 2) surface reconstruction was confirmed for the post-annealing-graphene-covered Ge(110) surface via STM, and was found to be quite air-stable, owing to the protection of the graphene monolayer against surface oxidation. Our study disclosed that the topographic features of the topmost graphene monolayer and the Ge(110) surface could be selectively imaged by utilizing suitable scanning biases. According to the STM results and DFT calculations, a rational ball-and-stick model of the (6 × 2) reconstruction was successfully provided, in which an elemental building block comprising two Ge triangles and two isolated Ge atoms adsorbed on the unreconstructed ideal Ge(110) surface. Local density of states of the graphene/Ge surface was explored via scanning tunneling spectroscopy (STS), presenting four well-defined differential conductance (dI/dV) peaks, protruding at energies of 0.2, 0.4, 0.6 and 0.8 eV, respectively. The four peaks predominantly originated from the surface states of the reconstructing adatoms and were well reproduced by our theoretical simulation. This result means that the Ge surface is very robust after being encapsulated by the epitaxial graphene, which could be advantageous for directly fabricating graphene/Ge-hybrid high-speed electronics and optoelectronics based on conventional microelectronics technology.
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Affiliation(s)
- Wenjing Chen
- Department of Physics, Beijing Normal University, Beijing, 100875, People's Republic of China.
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