Wavelength-Tunable Mid-Infrared Lasing from Black Phosphorus Nanosheets

Emerging 2D Materials and Van der Waals Heterostructures for Advanced NIR, SWIR, and MWIR Emitters

Infrared (IR) emitters have drawn considerable attention for applications in deep-tissue imaging, optical communication, and thermal sensing. While III-V and II-VI semiconductors are traditionally used in these emitters, their reliance on complex epitaxial growth to overcome lattice mismatch and thermal expansion challenges leads to intricate device structures and limits their integrability. In contrast, 2D materials provide a more flexible solution, offering diverse optical bandgaps and the ability to be vertically restacked in arbitrary crystal orientations to form complex van der Waals (vdW) heterostructures, which can be further integrated onto diverse device platforms. This review highlights recent advancements in 2D-based IR emitters, focusing on the NIR, SWIR, and MWIR regions. It discusses the photoluminescence properties of 2D materials and innovative vdW engineering techniques used to develop IR light-emitting diodes (LEDs). The review also explores how external stimuli, such as electric fields and strain, can enable tunable emission wavelengths and examines the integration of 2D-based emitters with photonic structures, like cavities and waveguides, to create hybrid photonic devices. Finally, the review addresses the challenges and prospects of 2D-based IR technologies, highlighting their potential to transform IR light sources across various applications.

Van der Waals GeSe with Strain- and Gate-Tunable Linear Dichroism for Wearable Electronics

The direct detection of light polarization poses a crucial challenge in the field of optoelectronics and photonics. Herein, the tunable linear dichroism (LD) in GeSe-based polarized photodetectors is presented through electronic and structural asymmetry modulation, and demonstrate their application prospects in wearable electronics. An improvement in the dichroic ratio up to 34% is achieved under a gate voltage of 20 V, and the improvement reaches 44% by applying a tensile strain along the zigzag direction. Theoretical calculations reveal that the gate regulation of barrier height between GeSe and Au electrodes is responsible for the electrical-tunable LD, while the anisotropic optical absorption in response to strains leads to the strain-tunable LD. Moreover, flexible GeSe transistors are developed for wearable applications including motion sensors and glucose monitors. This study offers viable approaches for modulating the optical anisotropy of low-dimensional materials and emphasizes the versatility of van der Waals materials for practical applications in wearable electronic devices.

Bright dipolar excitons in twisted black phosphorus homostructures

Bright dipolar excitons, which contain electrical dipoles and have high oscillator strength, are an ideal platform for studying correlated quantum phenomena. They usually rely on carrier tunneling between two quantum wells or two layers to hybridize with nondipolar excitons to gain oscillator strength. In this work, we uncovered a new type of bright infrared dipolar exciton by stacking 90°-twisted black phosphorus (BP) structures. These excitons, inherent to the reconstructed band structure, exhibit high oscillator strength. Most importantly, they inherit the linear polarization from BP, which allows light polarization to be used to select the dipole direction. Moreover, the dipole moment and resonance energy can be widely tuned by the thickness of the BP. Our results demonstrate a useful platform for exploring tunable correlated dipolar excitons.

Extended Surface Bands Enabled Lasing Emission and Wavelength Switch from Sulfur Quantum Dots

The development of a lasing wavelength switch, particularly from a single inorganic gain material, is challenging but highly demanded for advanced photonics. Nonetheless, all current lasing emission of inorganic gain materials arises from band-edge states, and the inherent fixed bandgap limitation of the band-edge system leads to the inaccessibility of lasing wavelength switching from a single inorganic gain material. Here the realization of a single inorganic gain material-based lasing wavelength switch is reported by proposing an alternative lasing emission strategy, that is, lasing emission from surface gain. Previous efforts to achieve surface-gain-enabled lasing emission have been hindered by the limited gain volume provided by surface states due to the broad emission bandwidth and/or low emission efficiency. This challenge is overcome by introducing extended surface bands onto the surface of sulfur quantum dots. The extended surface bands contribute to a high photoluminescence quantum yield and narrow emission bandwidth, thereby providing sufficient gain volume and facilitating stimulated emission. When combined with whispering gallery mode microcavity, surface gain enabled lasing emission manifests an ultralow threshold of 8.3 µJ cm-2. Remarkably, the reconfigurable perturbation to surface gain, facilitated by molecular affinity, allows for the realization of the lasing wavelength switch from a single inorganic gain material.

Black Phosphorus for Mid-Infrared Optoelectronics: Photophysics, Scalable Processing, and Device Applications

High efficiency mid-infrared (λ = 3-8 μm) light emitters and photodetectors are pivotal for advancing next-generation optoelectronics. However, narrow-bandgap semiconductors face fundamental challenges such as pronounced nonradiative carrier recombination and thermally generated noise, which impede device performance. Recently, two-dimensional layered black phosphorus (BP) and its alloys have attracted substantial interest for mid-infrared device applications, demonstrating superior performance relative to conventional III-V and II-VI semiconductors with similar bandgaps. In this review, we discuss the optical properties of BP, contrasting these with those of covalent compounds. Owing to its inherently self-terminated surface structure and reduced nonradiative recombination, BP exhibits high performance in light emission and photodetection at room temperature. Furthermore, this review highlights recent advances in the large-area processing of BP thin films, paving the way for practical device applications and integration. Finally, we explore ongoing challenges and emerging opportunities in the utilization of BP for functional mid-infrared devices.

Infrared optoelectronics in twisted black phosphorus

Electrons and holes, fundamental charge carriers in semiconductors, dominate optical transitions and detection processes. Twisted van der Waals (vdW) heterostructures offer an effective approach to manipulate radiation, separation, and collection processes of electron-hole pairs by creating an atomically sharp interface. Here, we demonstrate that twisted interfaces in vdW layered black phosphorus (BP), an infrared semiconductor with highly anisotropic crystalline structure and properties, can significantly alter both recombination and separation processes of electron-hole pairs. On the one hand, the twisted interface breaks the symmetry of optical transition states resulting in infrared light emission of originally symmetry-forbidden optical states along the zigzag direction. On the other hand, spontaneous electronic polarization/bulk photovoltaic effect is generated at the twisted interface enabling effective separation of electron-hole pairs without external voltage bias. This is supported by first-principles calculations and repeated experiments at various twisted angles from 0 to 90°. Importantly, these phenomena can be observed in twisted heterostructures with thickness beyond two-dimensional. Our results suggest that the engineering of vdW twisted interfaces is an effective strategy for manipulating the optoelectronic properties of materials and constructing functional devices.

Coherent light-emitting metasurfaces based on bound states in the continuum

An emergent need exists for solid state tunable coherent light emitters in the mid-infrared range for spectroscopy, sensing, and communication applications where current light sources are dominated by spontaneous emitters. This paper demonstrates a distinct class of coherent thermal emitters operating in the mid-infrared wavelength regime. The structure of the light source consists of a dielectric metasurface fabricated on a phononic substrate. In this study, we present the first implementation of off-Γ Friedrich-Wintgen bound states in the continuum at mid-infrared wavelengths suitable for developing the next generation of coherent light emitters. Numerical analysis of the emissivity spectrum reveals the interference of resonances leading to avoided crossings and the formation of Friedrich-Wintgen bound states in the radiation spectrum. Additionally, significant localized field enhancements are observed within the metasurface at operating wavelengths. The emissivity spectra measured by reflectivity and emission experiments exhibit temporally coherent emission peaks in the vicinity of the bound state in the continuum, the first such demonstration in the mid-infrared region for wavelengths longer than 7 µm. These results represent a new approach for significant advancement in realizing mid-infrared coherent light emitters with promising implications for future technologies.

Continuous-Wave Pumped Monolayer WS2 Lasing for Photonic Barcoding

Micro/nano photonic barcoding has emerged as a promising technology for information security and anti-counterfeiting applications owing to its high security and robust tamper resistance. However, the practical application of conventional micro/nano photonic barcodes is constrained by limitations in encoding capacity and identification verification (e.g., broad emission bandwidth and the expense of pulsed lasers). Herein, we propose high-capacity photonic barcode labels by leveraging continuous-wave (CW) pumped monolayer tungsten disulfide (WS2) lasing. Large-area, high-quality monolayer WS2 films were grown via a vapor deposition method and coupled with external cavities to construct optically pumped microlasers, thus achieving an excellent CW-pumped lasing with a narrow linewidth (~0.39 nm) and a low threshold (~400 W cm-2) at room temperature. Each pixel within the photonic barcode labels consists of closely packed WS2 microlasers of varying sizes, demonstrating high-density and nonuniform multiple-mode lasing signals that facilitate barcode encoding. Notably, CW operation and narrow-linewidth lasing emission could significantly simplify detection. As proof of concept, a 20-pixel label exhibits a high encoding capacity (2.35 × 10108). This work may promote the advancement of two-dimensional materials micro/nanolasers and offer a promising platform for information encoding and security applications.

Quantitative Mid-infrared Photoluminescence Characterization of Black Phosphorus-Arsenic Alloys

Black phosphorus (bP) is a promising material for mid-infrared (mid-IR) optoelectronic applications, exhibiting high performance light emission and detection. Alloying bP with arsenic extends its operation toward longer wavelengths from 3.7 μm (bP) to 5 μm (bP3As7), which is of great practical interest. Quantitative optical characterizations are performed to establish black phosphorus-arsenic (bPAs) alloys optoelectronic quality. Anisotropic optical constants (refractive index, extinction coefficient, and absorption coefficient) of bPAs alloys from near-infrared to mid-IR (0.2-0.9 eV) are extracted with reflection measurements, which helps optical device design. Quantitative photoluminescence (PL) of bPAs alloys with different As concentrations are measured from room temperature to 77 K. PL quantum yield measurements reveal a 2 orders of magnitude decrease in radiative efficiency with increasing As concentration. An optical cavity is designed for bP3As7, which allows for up to an order of magnitude enhancement in the quantum yield due to the Purcell effect. Our comprehensive optical characterization provides the foundation for high performance mid-IR optical device design using bPAs alloys.

Mid-infrared integrated electro-optic modulators: a review

Integrated mid-infrared (MIR) photonics have various applications in optical fiber communication, spectral detection and identification, free-space communication, and light detection and ranging, etc. The MIR electro-optic (EO) modulator, which is one of the key components of MIR integrated photonic systems, has attracted a lot of research interests. In this paper, we review the reported integrated MIR EO modulators based on different modulation mechanisms and material platforms. The recent research progresses and challenges of MIR EO modulators are presented and discussed. The unique advantages and the corresponding applications of each type of MIR modulators are summarized as well. In the end, we provide our perspectives of a few areas in integrated MIR modulators that are worthy for research attention in future.

Electronic Structure of Few-Layer Black Phosphorus from μ-ARPES

Black phosphorus (BP) stands out among two-dimensional (2D) semiconductors because of its high mobility and thickness dependent direct band gap. However, the quasiparticle band structure of ultrathin BP has remained inaccessible to experiment thus far. Here we use a recently developed laser-based microfocus angle resolved photoemission (μ-ARPES) system to establish the electronic structure of 2-9 layer BP from experiment. Our measurements unveil ladders of anisotropic, quantized subbands at energies that deviate from the scaling observed in conventional semiconductor quantum wells. We quantify the anisotropy of the effective masses and determine universal tight-binding parameters, which provide an accurate description of the electronic structure for all thicknesses.

2D Material Infrared Photonics and Plasmonics

Two-dimensional (2D) materials including graphene, transition metal dichalcogenides, black phosphorus, MXenes, and semimetals have attracted extensive and widespread interest over the past years for their many intriguing properties and phenomena, underlying physics, and great potential for applications. The vast library of 2D materials and their heterostructures provides a diverse range of electrical, photonic, mechanical, and chemical properties with boundless opportunities for photonics and plasmonic devices. The infrared (IR) regime, with wavelengths across 0.78 μm to 1000 μm, has particular technological significance in industrial, military, commercial, and medical settings while facing challenges especially in the limit of materials. Here, we present a comprehensive review of the varied approaches taken to leverage the properties of the 2D materials for IR applications in photodetection and sensing, light emission and modulation, surface plasmon and phonon polaritons, non-linear optics, and Smith-Purcell radiation, among others. The strategies examined include the growth and processing of 2D materials, the use of various 2D materials like semiconductors, semimetals, Weyl-semimetals and 2D heterostructures or mixed-dimensional hybrid structures, and the engineering of light-matter interactions through nanophotonics, metasurfaces, and 2D polaritons. Finally, we give an outlook on the challenges in realizing high-performance and ambient-stable devices and the prospects for future research and large-scale commercial applications.

Uniaxial Strain-Induced Tunable Mid-infrared Light Emission from Thin Film Black Phosphorus

Strain engineering is a powerful tool that can modulate semiconductor device performance. Here, we demonstrate that the bandgap of thin film (∼40 nm) black phosphorus (bP) can be continuously tuned from 2.9 to 3.9 μm by applying an in-plane uniaxial strain, as evidenced by mid-infrared photoluminescence (PL) spectroscopy. The deduced bandgap strain coefficients are ∼103 meV %^-1, which coincide with those obtained in few-layer bP. On the basis of first-principles calculations, the origin of the uniaxial tensile strain-induced PL enhancement is suggested to be due to the increase in both the effective mass ratio (m_e^*/m_h^*) and the bandgap, leading to the increment of the radiative efficiency. Moreover, the mid-infrared PL emission remains perfectly linear-polarized along the armchair direction regardless of tensile or compressive strain. The highly tunable bandgap of bP in the mid-infrared regime opens up opportunities for the realization of mid-infrared light-emitting diodes and lasers using layered materials.

Electronic and optical properties of the buckled and puckered phases of phosphorene and arsenene

Using first-principles calculations, we have investigated the structural, electronic, and optical properties of phosphorene and arsenene, group V two-dimensional materials. They have attracted the scientific community's interest due to their possible applications in electronics and optoelectronics. Since phosphorene and arsenene are not planar monolayers, two types of structures were considered for each system: puckered and buckled arrangements. Computations of band gap were performed within the GW approach to overcome the underestimation given by standard DFT and predict trustable band gap values in good agreement with experimental measurements. Our calculated electronic band gaps lie in the range from near-infrared to visible light, suggesting potential applications in optoelectronics devices. The computed electronic band gaps are 2.95 eV and 1.83 eV for blue and black phosphorene systems. On the other hand, the values for buckled and puckered arsenene are 2.56 eV and 1.51 eV, respectively. Moreover, the study of the optical properties has been dealt by computing the dielectric function imaginary part, which was obtained using the Bethe-Salpeter approach. The use of this technique allows the consideration of excitonic effects. Results indicate strong exciton binding energies of 830 meV for blue phosphorene, 540 meV for black phosphorene, 690 meV for buckled arsenene, and 484 meV for puckered arsenene. The results of our study suggest the possibility of using these materials in electronic and optoelectronic devices.

Infrared Light Emission Devices Based on Two-Dimensional Materials

Two-dimensional (2D) materials have garnered considerable attention due to their advantageous properties, including tunable bandgap, prominent carrier mobility, tunable response and absorption spectral band, and so forth. The above-mentioned properties ensure that 2D materials hold great promise for various high-performance infrared (IR) applications, such as night vision, remote sensing, surveillance, target acquisition, optical communication, etc. Thus, it is of great significance to acquire better insight into IR applications based on 2D materials. In this review, we summarize the recent progress of 2D materials in IR light emission device applications. First, we introduce the background and motivation of the review, then the 2D materials suitable for IR light emission are presented, followed by a comprehensive review of 2D-material-based spontaneous emission and laser applications. Finally, further development directions and challenges are summarized. We believe that milestone investigations of 2D-material-based IR light emission applications will emerge soon, which are beneficial for 2D-material-based nano-device commercialization.

Mid-Infrared Optoelectronic Devices Based on Two-Dimensional Materials beyond Graphene: Status and Trends

Since atomically thin two-dimensional (2D) graphene was successfully synthesized in 2004, it has garnered considerable interest due to its advanced properties. However, the weak optical absorption and zero bandgap strictly limit its further development in optoelectronic applications. In this regard, other 2D materials, including black phosphorus (BP), transition metal dichalcogenides (TMDCs), 2D Te nanoflakes, and so forth, possess advantage properties, such as tunable bandgap, high carrier mobility, ultra-broadband optical absorption, and response, enable 2D materials to hold great potential for next-generation optoelectronic devices, in particular, mid-infrared (MIR) band, which has attracted much attention due to its intensive applications, such as target acquisition, remote sensing, optical communication, and night vision. Motivated by this, this article will focus on the recent progress of semiconducting 2D materials in MIR optoelectronic devices that present a suitable category of 2D materials for light emission devices, modulators, and photodetectors in the MIR band. The challenges encountered and prospects are summarized at the end. We believe that milestone investigations of 2D materials beyond graphene-based MIR optoelectronic devices will emerge soon, and their positive contribution to the nano device commercialization is highly expected.

Anomalous non-equilibrium response in black phosphorus to sub-gap mid-infrared excitation

The competition between the electron-hole Coulomb attraction and the 3D dielectric screening dictates the optical properties of layered semiconductors. In low-dimensional materials, the equilibrium dielectric environment can be significantly altered by the ultrafast excitation of photo-carriers, leading to renormalized band gap and exciton binding energies. Recently, black phosphorus emerged as a 2D material with strongly layer-dependent electronic properties. Here, we resolve the response of bulk black phosphorus to mid-infrared pulses tuned across the band gap. We find that, while above-gap excitation leads to a broadband light-induced transparency, sub-gap pulses drive an anomalous response, peaked at the single-layer exciton resonance. With the support of DFT calculations, we tentatively ascribe this experimental evidence to a non-adiabatic modification of the screening environment. Our work heralds the non-adiabatic optical manipulation of the electronic properties of 2D materials, which is of great relevance for the engineering of versatile van der Waals materials.

Here, the authors investigate the optical response of bulk black phosphorus to mid-infrared pulses, and find that while above-gap excitation leads to a broadband light-induced transparency, sub-gap pulses drive an anomalous response, peaked at the single-layer exciton resonance.

Localization of Laterally Confined Modes in a 2D Semiconductor Microcavity

Monolayer semiconductor embedded planar microcavities are becoming a promising light-matter interacting system to uncover a wealth of photonic, excitonic, and polaritonic physics at the two-dimensional (2D) limit. In these 2D semiconductor microcavities employing the longitudinal Fabry-Perot resonance, major attention has been paid to the coupling of excitons with vertically confined cavity photons; by contrast, the lateral confinement effect on exciton-photon interactions is still elusive. Here we observe the localized distribution of laterally confined modes with discrete energies in a 2D semiconductor embedded microcavity. Monolayer tungsten disulfides with equilateral triangular geometries but varied edge lengths are selected as the active media incorporated into a dielectric planar microcavity. With the shortening of the edge length, photoluminescence mappings of active regions present spatially localized emission patterns, which are attributed to the presence of in-plane triangular waveguiding resonance caused by total internal reflection at the one-dimensional closed boundary between the monolayer semiconductor and its surrounding cavity material. Unlike the conventional quantum confinement effect of native excitons appearing at the nanometer scale, the mode emission at the active-medium center exhibits apparent size-dependent features at the micrometer scale due to the optical confinement effect correlated with its photonic nature. By reducing the area of active media, single-mode dominant emission is achieved together with its nondispersive energy and improved directionality. Our work highlights the crucial role of lateral mode control in monolayer semiconductor embedded planar microcavities and encourages the investigation of the quantum billiard problem in 2D semiconductors.

Room-temperature Near-infrared Excitonic Lasing from Mechanically Exfoliated InSe Microflake

The development of chip-level near-infrared laser sources using two-dimensional semiconductors is imperative to maintain the architecture of van der Waals integrated optical interconnections. However, the established two-dimensional semiconductor lasers may have either the disadvantages of poor controllability of monolayered gain media, large optical losses on silicon, or complicated fabrication of external optical microcavities. This study demonstrates room-temperature near-infrared lasing from mechanically exfoliated γ-phase indium selenide (InSe) microflakes free from external optical microcavities at a center wavelength of ∼1030 nm. The lasing action occurs at the sub-Mott density level and is generated by exciton-exciton scattering with a high net modal optical gain of ∼1029 cm^-1. Moreover, the lasing is sustained for microdisks fabricated by a simple laser printing with a reduced threshold. These results suggest that InSe is a promising material for near-infrared microlasers and can be employed in a wide range of applications, including imaging, sensing, and optical interconnects.

Layer-Dependent Pressure Effect on the Electronic Structure of 2D Black Phosphorus

Through infrared spectroscopy, we systematically study the pressure effect on electronic structures of few-layer black phosphorus (BP) with layer number ranging from 2 to 13. We reveal that the pressure-induced shift of optical transitions exhibits strong layer dependence. In sharp contrast to the bulk counterpart which undergoes a semiconductor to semimetal transition under ∼1.8  GPa, the band gap of 2 L increases with increasing pressure until beyond 2 GPa. Meanwhile, for a sample with a given layer number, the pressure-induced shift also differs for transitions with different indices. Through the tight-binding model in conjunction with a Morse potential for the interlayer coupling, this layer- and transition-index-dependent pressure effect can be fully accounted. Our study paves a way for versatile van der Waals engineering of two-dimensional BP.

3D Laser Displays Based on Circularly Polarized Lasing from Cholesteric Liquid Crystal Arrays

3D laser displays play an important role in next-generation display technologies owing to the ultimate visual experience they provide. Circularly polarized (CP) laser emissions, featuring optical rotatory power and invariability under rotations, are attractive for 3D displays due to potential in enhancing contrast ratio and comfortability. However, the lack of pixelated self-emissive CP microlaser arrays as display panels hinders the implementation of 3D laser displays. Here, full-color 3D laser displays are demonstrated based on CP lasing with inkjet-printed cholesteric liquid crystal (CLC) arrays as display panels. Individual CP lasers are realized by embedding fluorescent dyes into CLCs with their left-/right-handed helical superstructures serving as distributed feedback microcavities, bringing in ultrahigh circular polarization degree values (g_em  = 1.6). These CP microlaser pixels exhibit excellent far-field color-rendering features and a relatively large color gamut for high-fidelity displays. With these printed CLC red-green-blue (RGB) microlaser arrays serving as display panels, proof-of-concept full-color 3D laser displays are demonstrated via delivering images with orthogonal CP laser emissions into one's left and right eyes. These results provide valuable enlightenment for the development of 3D laser displays.

Mid-Infrared Photodetection of Type-II Dirac Semimetal 1T-PtTe2 Grown by Molecular Beam Epitaxy

Mid-infrared (MIR) photodetection is of significance in civil and military applications because it shows superiority in absorbing the vibration of various molecules and covering atmospheric transmission windows. Recently, the PtTe₂, a typical type-II Dirac semimetal, has come under the spotlight due to its unique photodetection sensibility in the MIR region and robust stability in the atmosphere. Here, the high-quality and large-scale 1T-PtTe₂ thin films with air stability were grown by molecular beam epitaxy. Broadband photoresponse of the photodetectors of PtTe₂ from 420 nm to 10.7 μm shows high responsivity and detectivity of 0.2 mA W^-1 and 2.6 × 10⁷ Jones at 10.7 μm and 1.6 mA W^-1 and 2.2 × 10⁸ Jones at 4.7 μm under the atmosphere, respectively. Moreover, the photodetectors exhibit high sensitivity in visible and near-infrared regions (8.2 mA W^-1 at 650 nm and 15.6 mA W^-1 at 960 nm). The power- and polarization-dependent photoresponse measurements reveal the linear relationship of power photoresponse and obvious anisotropic photoresponse (the ratio of anisotropy ellipse is 8.3 at 10.7 μm), respectively. These results suggest that the PtTe₂ could be expected to be an advanced photodetection material for polarization angle-sensitive detection, infrared imaging, and photodetection from the visible to MIR range.

Bright and Near-Unity Polarized Light Emission Enabled by Highly Luminescent Cu2I2-Dimer Cluster-Based Hybrid Materials

As one fundamental property of light, polarization has a huge impact in quantum optics and optoelectronics through light-matter interactions. However, the bright and near-unity polarized light emissions in the visible range by solid crystalline materials are scantly realized. Here, we report well-defined quasi two-dimensional (2D) hybrid crystals based on the linear alignment of Cu₂I₂-dimer/bidentate ligand hybrid clusters for achieving bright and near-unity linearly polarized light emissions. Using first-principle calculations, we demonstrate that the superaligned transition dipole moments are the key for the observed excellent polarized light emissions. To further enhance the photoluminescence (PL) polarization degree, we fabricate Cu₂I₂-dimer-based hybrid nanobelts, which display high PL quantum yield (up to 64%) and ultrahigh PL polarization degree (∼0.99). Our reported copper iodine cluster-based luminescent hybrid materials for bright and highly polarized light emissions will have great potential for future quantum optics applications.

A Photoisomerization-Activated Intramolecular Charge-Transfer Process for Broadband-Tunable Single-Mode Microlasers

Miniaturized lasers with high spectral purity and wide wavelength tunability are crucial for various photonic applications. Here we propose a strategy to realize broadband-tunable single-mode lasing based on a photoisomerization-activated intramolecular charge-transfer (ICT) process in coupled polymer microdisk cavities. The photoisomerizable molecules doped in the polymer microdisks can be quantitatively transformed into a kind of laser dye with strong ICT character by photoexcitation. The gain region was tailored over a wide range through the self-modulation of the optically activated ICT isomers. Meanwhile, the resonant modes shifted with the photoisomerization because of a change in the effective refractive index of the polymer microdisk cavity. Based on the synergetic modulation of the optical gain and microcavity, we realized the broadband tuning of the single-mode laser. These results offer a promising route to fabricate broadband-tunable microlasers towards practical photonic integrations.

Polarization-Dependent Optical Properties and Optoelectronic Devices of 2D Materials

The development of optoelectronic devices requires breakthroughs in new material systems and novel device mechanisms, and the demand recently changes from the detection of signal intensity and responsivity to the exploration of sensitivity of polarized state information. Two-dimensional (2D) materials are a rich family exhibiting diverse physical and electronic properties for polarization device applications, including anisotropic materials, valleytronic materials, and other hybrid heterostructures. In this review, we first review the polarized-light-dependent physical mechanism in 2D materials, then present detailed descriptions in optical and optoelectronic properties, involving Raman shift, optical absorption, and light emission and functional optoelectronic devices. Finally, a comment is made on future developments and challenges. The plethora of 2D materials and their heterostructures offers the promise of polarization-dependent scientific discovery and optoelectronic device application.