Nanoscale Topotactic Phase Transformation in SrFeOx Epitaxial Thin Films for High-Density Resistive Switching Memory

Freestanding Perovskite and Brownmillerite SrCoOx Membranes for Direct Imaging of Topotactic Phase Transitions

Topotactic phase transitions between perovskite SrCoO3 and brownmillerite SrCoO2.5 have garnered attention for application in energy-efficient neuromorphic computing systems. However, the evolution of local microstructures, crucial for designing topotactic devices and improving switching performance, remains underexplored due to the limitations of epitaxial thin films bound to bulk substrates. Here, we report the synthesis and characterization of topotactic oxide SrCoOx as a freestanding membrane, successfully stabilizing both perovskite and brownmillerite phases. Plan-view transmission electron microscopy identifies the extraordinary formation of filamentary one-dimensional (1D) domains of SrCoO2.5 phases during the topotactic phase transition, correlated with the 1D oxygen vacancy channels that facilitate rapid oxygen ion diffusion. These 1D domains serve as direct evidence of the anisotropic nature of the topotactic phase transition, dictated by oxygen diffusion. These findings also underscore the advantages of freestanding membrane geometries for developing a fundamental understanding of phase transitions in complex oxides.

Volatile Resistive Switching and Short-Term Synaptic Plasticity in a Ferroelectric-Modulated SrFeOx Memristor

SrFeOx (SFO) offers a topotactic phase transformation between an insulating brownmillerite SrFeO2.5 (BM-SFO) phase and a conductive perovskite SrFeO3 (PV-SFO) phase, making it a competitive candidate for use in resistive memory and neuromorphic computing. However, most of existing SFO-based memristors are nonvolatile devices which struggle to achieve short-term synaptic plasticity (STP). To address this issue and realize STP, we propose to leverage ferroelectric polarization to effectively draw ions across the interface so that the PV-SFO conductive filaments (CFs) can be ruptured in absence of an external field. As a proof of concept, we fabricate ferroelectric Pb(Zr0.2Ti0.8)O3 (PZT)/BM-SFO bilayer films with Au top electrodes and SrRuO3 bottom electrodes. The device exhibits the desired volatile resistive switching behavior, with its low resistance state decaying over time. Such volatility is attributed to the positive polarization charge near the PZT/SFO interface, which can attract the oxygen ions from SFO to PZT and hence lead to the rupture of CFs. Moreover, this volatile device successfully emulates STP-related synaptic functions, including excitatory postsynaptic current, paired-pulse facilitation, learning-experience behavior, associative learning, and reservoir computing. Our study showcases an effective method for achieving volatile resistive switching and STP, which may be applied to various systems beyond SFO-based memristors.

Layer Resolved Cr Oxidation State Modulation in Epitaxial SrFe0.67Cr0.33O3-δ Thin Films

Understanding how doping influences physicochemical properties of ABO3 perovskite oxides is critical for tailoring their functionalities. In this study, SrFe0.67Cr0.33O3-δ epitaxial thin films were used to examine the effects of Fe and Cr competition on structure and B-site cation oxidation states. The films exhibit a perovskite-like structure near the film/substrate interface, while a brownmillerite-like structure with horizontal oxygen vacancy channels predominates near the surface. Electron energy loss spectroscopy shows Fe remains Fe3+, while Cr varies from ∼Cr3+ (tetrahedral layers) to ∼Cr4+ (octahedral layers) within brownmillerite phases and becomes ∼Cr4.5+ in perovskite-like phases. Theoretical simulations indicate that Cr-O bond arrangements and the way oxygen vacancies interact with Cr and Fe drive Cr charge disproportionation. High-valent Cr cations introduce additional densities of states near the Fermi level, reducing the optical bandgap from ∼2.0 eV (SrFeO2.5) to ∼1.7 eV (SrFe0.67Cr0.33O3-δ). These findings offer insights into B-site cation doping in the perovskite oxide framework.

Oxygen Vacancy Compensation-Induced Analog Resistive Switching in the SrFeO3-δ/Nb:SrTiO3 Epitaxial Heterojunction for Noise-Tolerant High-Precision Image Recognition

Neuromorphic computing, inspired by the brain's architecture, promises to surpass the limitations of von Neumann computing. In this paradigm, synaptic devices play a crucial role, with resistive switching memory (memristors) emerging as promising candidates due to their low power consumption and scalability advantages. This study focuses on the development of metal/oxide-semiconductor heterojunctions, which offer several technological advantages and have broad potential for applications in artificial neural synapses. However, constructing high-quality epitaxial interfaces between metal and oxide semiconductors and designing modifiable contact barriers are challenging. Herein, we construct high-quality epitaxial metal/semiconductor interfaces based on the metallicity of the perovskite phase SrFeO3-δ (PV-SFO) and a small Schottky barrier in contact with Nb-doped SrTiO3 (NSTO). X-ray diffraction patterns, reciprocal space mapping results, and cross-sectional transmission electron microscopy images reveal that the prepared PV-SFO film exhibits a perfect single-crystal structure and an excellent epitaxial interface with the NSTO (111) substrate. The corresponding memristor exhibits analog-type resistive-variable characteristics with an ON/OFF ratio of ∼1000, stable data retention after 10,000 s, and no noticeable fluctuation in resistance after 10,000 pulse cycles. Electron energy loss spectroscopy, first-principles calculations, and electrical measurements reveal that compensating or restoring oxygen vacancies at the NSTO surface decreases or increases the contact barrier between PV-SFO and NSTO, respectively, thereby gradually regulating the resistance value. Furthermore, high-quality epitaxial PV-SFO/NSTO devices achieve up to 98.21% recognition accuracy for handwriting recognition tasks using LeNet-5-based network structures and 92.21% accuracy for color images using visual geometry group (VGG) network structures. This work contributes to the advancement of interface-type memristors and provides valuable insights into enhancing synaptic functionality in neuromorphic computing systems.

Research Progress on the Application of Topological Phase Transition Materials in the Field of Memristor and Neuromorphic Computing

Topological phase transition materials have strong coupling between their charge, spin orbitals, and lattice structure, which makes them have good electrical and magnetic properties, leading to promising applications in the fields of memristive devices. The smaller Gibbs free energy difference between the topological phases, the stable oxygen vacancy ordered structure, and the reversible topological phase transition promote the memristive effect, which is more conducive to its application in information storage, information processing, information calculation, and other related fields. In particular, extracting the current resistance or conductance of the two-terminal memristor to convert to the weight of the synapse in the neural network can simulate the behavior of biological synapses in their structure and function. In addition, in order to improve the performance of memristors and better apply them to neuromorphic computing, methods such as ion doping, electrode selection, interface modulation, and preparation process control have been demonstrated in memristors based on topological phase transition materials. At present, it is considered an effective method to obtain a unique resistive switching behavior by improving the process of preparing functional layers, regulating the crystal phase of topological phase transition materials, and constructing interface barrier-dependent devices. In this review, we systematically expound the resistance switching mechanism, resistance switching performance regulation, and neuromorphic computing of topological phase transition memristors, and provide some suggestions for the challenges faced by the development of the next generation of non-volatile memory and brain-like neuromorphic devices based on topological phase transition materials.

Guided anisotropic oxygen transport in vacancy ordered oxides

Anisotropic and efficient transport of ions under external stimuli governs the operation and failure mechanisms of energy-conversion systems and microelectronics devices. However, fundamental understanding of ion hopping processes is impeded by the lack of atomically precise materials and probes that allow for the monitoring and control at the appropriate time- and length- scales. In this work, using in-situ transmission electron microscopy, we directly show that oxygen ion migration in vacancy ordered, semiconducting SrFeO2.5 epitaxial thin films can be guided to proceed through two distinctly different diffusion pathways, each resulting in different polymorphs of SrFeO2.75 with different ground electronic properties before reaching a fully oxidized, metallic SrFeO3 phase. The diffusion steps and reaction intermediates are revealed by means of ab-initio calculations. The principles of controlling oxygen diffusion pathways and reaction intermediates demonstrated here may advance the rational design of structurally ordered oxides for tailored applications and provide insights for developing devices with multiple states of regulation.

Collective Control of Potential-Constrained Oxygen Vacancies in Oxide Heterostructures for Gradual Resistive Switching

Filamentary resistive switching in oxides is one of the key strategies for developing next-generation non-volatile memory devices. However, despite numerous advantages, their practical applications in neuromorphic computing are still limited due to non-uniform and indeterministic switching behavior. Given the inherent stochasticity of point defect migration, the pursuit of reliable switching likely demands an innovative approach. Herein, a collective control of oxygen vacancies is introduced in LaAlO3 /SrTiO3 (LAO/STO) heterostructures to achieve reliable and gradual resistive switching. By exploiting an electrostatic potential constraint in ultrathin LAO/STO heterostructures, the formation of conducting filaments is suppressed, but instead precisely control the concentration of oxygen vacancies. Since the conductance of the LAO/STO device is governed by the ensemble concentration of oxygen vacancies, not their individual probabilistic migrations, the resistive switching is more uniform and deterministic compared to conventional filamentary devices. It provides direct evidence for the collective control of oxygen vacancies by spectral noise analysis and modeling by Monte-Carlo simulation. As a proof of concept, the significantly-improved analog switching performance of the filament-free LAO/STO devices is demonstrated, revealing potential for neuromorphic applications. The results establish an approach to store information by point defect concentration, akin to biological ionic channels, for enhancing switching characteristics of oxide materials.

Revealing Resistive Switching Mechanism in CaFeOx Perovskite System with Electroforming-Free and Reset Voltage-Controlled Multilevel Resistance Characteristics

Recently, perovskite (PV) oxides with ABO₃ structures have attracted considerable interest from scientists owing to their functionality. In this study, CaFeO_x is introduced to reveal the resistive switching properties and mechanism of oxygen vacancy transition in PV and brownmillerite (BM) structures. BM-CaFeO_2.5 is grown on an Nb-STO conductive substrate epitaxially. CaFeO_x exhibits excellent endurance and reliability. In addition, the CaFeO_x also demonstrates an electroforming-free characteristic and multilevel resistance properties. To construct the switching mechanism, high-resolution transmission electron microscopy is used to observe the topotactic phase change in CaFeO_x . In addition, scanning TEM and electron energy loss spectroscopy show the structural evolution and valence state variation of CaFeO_x after the switching behavior. This study not only reveals the switching mechanism of CaFeO_x , but also provides a PV oxide option for the dielectric material in resistive random-access memory (RRAM) devices.

Nanomicelles Array for Ultrahigh-Density Data Storage

High-density data storage devices based on organic and polymer materials are currently restricted by two key issues, size limitations and uniformity of memory cells. Herein, one triblock polymer is synthesized by ring-opening metathesis polymerization, where the polymer contains an electron-donor-acceptor (A₁ D) segment, an electron-acceptor (A₂ ) segment, and a hydrophilic segment, that shows ternary memory behavior in a conventional sandwich-type device. The polymers that have monodisperse molecular weight dispersity self-assemble into nanomicelles with a uniform size of 80 nm. Each nanomicelle is composed of an A₁ DA₂ -type hydrophobic core stabilized with a hydrophilic shell. Nanobowls based on conductive oxide are prepared via the template method, wherein the nanomicelles are present as independent nanoscale memory units to produce an array of micelle matrices. Investigations of the resulting nanomemory device using conductive atomic force microscopy show that the micelles exhibit a predominant semiconductor memory behavior. Compared to traditional ternary devices with a memory unit size of ≈1 mm, this innovative fabrication method based on arrayed uniform nanomicelles downscales the size of storage cells to 80 nm. Furthermore, the described system leads to a greatly enhanced storage density (>10⁸ times over the same area), which opens up new paths for further development of ultrahigh-density data storage devices.

Nanostructured perovskites for nonvolatile memory devices

Perovskite materials have driven tremendous advances in constructing electronic devices owing to their low cost, facile synthesis, outstanding electric and optoelectronic properties, flexible dimensionality engineering, and so on. Particularly, emerging nonvolatile memory devices (eNVMs) based on perovskites give birth to numerous traditional paradigm terminators in the fields of storage and computation. Despite significant exploration efforts being devoted to perovskite-based high-density storage and neuromorphic electronic devices, research studies on materials' dimensionality that has dominant effects on perovskite electronics' performances are paid little attention; therefore, a review from the point of view of structural morphologies of perovskites is essential for constructing perovskite-based devices. Here, recent advances of perovskite-based eNVMs (memristors and field-effect-transistors) are reviewed in terms of the dimensionality of perovskite materials and their potentialities in storage or neuromorphic computing. The corresponding material preparation methods, device structures, working mechanisms, and unique features are showcased and evaluated in detail. Furthermore, a broad spectrum of advanced technologies (e.g., hardware-based neural networks, in-sensor computing, logic operation, physical unclonable functions, and true random number generator), which are successfully achieved for perovskite-based electronics, are investigated. It is obvious that this review will provide benchmarks for designing high-quality perovskite-based electronics for application in storage, neuromorphic computing, artificial intelligence, information security, etc.

ABO3 multiferroic perovskite materials for memristive memory and neuromorphic computing

The unique electron spin, transfer, polarization and magnetoelectric coupling characteristics of ABO₃ multiferroic perovskite materials make them promising candidates for application in multifunctional nanoelectronic devices. Reversible ferroelectric polarization, controllable defect concentration and domain wall movement originated from the ABO₃ multiferroic perovskite materials promotes its memristive effect, which further highlights data storage, information processing and neuromorphic computing in diverse artificial intelligence applications. In particular, ion doping, electrode selection, and interface modulation have been demonstrated in ABO₃-based memristive devices for ultrahigh data storage, ultrafast information processing, and efficient neuromorphic computing. These approaches presented today including controlling the dopant in the active layer, altering the oxygen vacancy distribution, modulating the diffusion depth of ions, and constructing the interface-dependent band structure were believed to be efficient methods for obtaining unique resistive switching (RS) behavior for various applications. In this review, internal physical dynamics, preparation technologies, and modulation methods are systemically examined as well as the progress, challenges, and possible solutions are proposed for next generation emerging ABO₃-based memristive application in artificial intelligence.

Electronic-structure evolution of SrFeO3-xduring topotactic phase transformation

Oxygen-vacancy-induced topotactic phase transformation between the ABO_2.5brownmillerite structure and the ABO₃perovskite structure attracts ever-increasing attention due to the perspective applications in catalysis, clean energy field, and memristors. However, a detailed investigation of the electronic-structure evolution during the topotactic phase transformation for understanding the underlying mechanism is highly desired. In this work, multiple analytical methods were used to explore evolution of the electronic structure of SrFeO_3-xthin films during the topotactic phase transformation. The results indicate that the increase in oxygen content induces a new unoccupied state of O 2pcharacter near the Fermi energy, inducing the insulator-to-metal transition. More importantly, the hole states are more likely constrained to thedx²-y²orbital than to thed3z²-r²orbital. Our results reveal an unambiguous evolution of the electronic structure of SrFeO_3-xfilms during topotactic phase transformation, which is crucial not only for fundamental understanding but also for perspective applications such as solid-state oxide fuel cells, catalysts, and memristor devices.

Spinodal Decomposition-Driven Endurable Resistive Switching in Perovskite Oxides

Common pursuits of developing nanometric logic and neuromorphic applications have motivated intensive research studies into low-dimensional resistive random-access memory (RRAM) materials. However, fabricating resistive switching medium with inherent stability and homogeneity still remains a bottleneck. Herein, we report a self-assembled uniform biphasic system, comprising low-resistance 3 nm-wide (Bi_0.4,La_0.6)FeO_3-δ nanosheets coherently embedded in a high-resistance (Bi_0.2,La_0.8)FeO_3-δ matrix, which were spinodally decomposed from an overall stoichiometry of the (Bi_0.24,La_0.76)FeO_3-δ parent phase, as a promising nanocomposite to be a stable and endurable RRAM medium. The Bi-rich nanosheets accommodating high concentration of oxygen vacancies as corroborated by X-ray photoelectron spectroscopy and electron energy loss spectroscopy function as fast carrier channels, thus enabling an intrinsic electroforming-free character. Surficial electrical state and resistive switching properties are investigated using multimodal scanning probe microscopy techniques and macroscopic I-V measurements, showing high on/off ratio (∼10³) and good endurance (up to 1.6 × 10⁴ cycles). The established spinodal decomposition-driven phase-coexistence BLFO system demonstrates the merits of stability, uniformity, and endurability, which is promising for further application in RRAM devices.

Analog memristive synapse based on topotactic phase transition for high-performance neuromorphic computing and neural network pruning

Inspired by the human brain, nonvolatile memories (NVMs)-based neuromorphic computing emerges as a promising paradigm to build power-efficient computing hardware for artificial intelligence. However, existing NVMs still suffer from physically imperfect device characteristics. In this work, a topotactic phase transition random-access memory (TPT-RAM) with a unique diffusive nonvolatile dual mode based on SrCoO _x is demonstrated. The reversible phase transition of SrCoO _x is well controlled by oxygen ion migrations along the highly ordered oxygen vacancy channels, enabling reproducible analog switching characteristics with reduced variability. Combining density functional theory and kinetic Monte Carlo simulations, the orientation-dependent switching mechanism of TPT-RAM is investigated synergistically. Furthermore, the dual-mode TPT-RAM is used to mimic the selective stabilization of developing synapses and implement neural network pruning, reducing ~84.2% of redundant synapses while improving the image classification accuracy to 99%. Our work points out a new direction to design bioplausible memristive synapses for neuromorphic computing.

Alkali-deficiency driven charged out-of-phase boundaries for giant electromechanical response

Traditional strategies for improving piezoelectric properties have focused on phase boundary engineering through complex chemical alloying and phase control. Although they have been successfully employed in bulk materials, they have not been effective in thin films due to the severe deterioration in epitaxy, which is critical to film properties. Contending with the opposing effects of alloying and epitaxy in thin films has been a long-standing issue. Herein we demonstrate a new strategy in alkali niobate epitaxial films, utilizing alkali vacancies without alloying to form nanopillars enclosed with out-of-phase boundaries that can give rise to a giant electromechanical response. Both atomically resolved polarization mapping and phase field simulations show that the boundaries are strained and charged, manifesting as head-head and tail-tail polarization bound charges. Such charged boundaries produce a giant local depolarization field, which facilitates a steady polarization rotation between the matrix and nanopillars. The local elastic strain and charge manipulation at out-of-phase boundaries, demonstrated here, can be used as an effective pathway to obtain large electromechanical response with good temperature stability in similar perovskite oxides.

Phase boundary engineering through chemical alloying and phase control is a traditional approach to enhancing piezoelectric properties. Here, the authors design a strategy in alkali niobate films, utilizing alkali vacancies without alloying to form nanopillars enclosed.

Harnessing the topotactic transition in oxide heterostructures for fast and high-efficiency electrochromic applications

Mobile oxygen vacancies offer a substantial potential to broaden the range of optical functionalities of complex transition metal oxides due to their high mobility and the interplay with correlated electrons. Here, we report a large electro-absorptive optical variation induced by a topotactic transition via oxygen vacancy fluidic motion in calcium ferrite with large-scale uniformity. The coloration efficiency reaches ~80 cm² C^-1, which means that a 300-nm-thick layer blocks 99% of transmitted visible light by the electrical switching. By tracking the color propagation, oxygen vacancy mobility can be estimated to be 10^-8 cm² s^-1 V^-1 near 300°C, which is a giant value attained due to the mosaic pseudomonoclinic film stabilized on LaAlO₃ substrate. First-principles calculations reveal that the defect density modulation associated with hole charge injection causes a prominent change in electron correlation, resulting in the light absorption modulation. Our findings will pave the pathway for practical topotactic electrochromic applications.

Nanoscale Phase Mixture and Multifield-Induced Topotactic Phase Transformation in SrFeOx

Nanoscale phase mixtures in transition-metal oxides (TMOs) often render these materials susceptible to external stimuli (electric field, mechanical stress, etc.), which can lead to rich functional properties and device applications. Here, direct observation and multifield manipulation of a nanoscale mixture of brownmillerite SrFeO_2.5 (BM-SFO) and perovskite SrFeO₃ (PV-SFO) phases in SrFeO_x (SFO) epitaxial thin films are reported. The mixed-phase SFO film in its pristine state exhibits a nanoscaffold structure consisting of PV-SFO nanodomains embedded in the BM-SFO matrix. This nanoscaffold structure produces gridlike patterns in the current and electrochemical strain maps, owing to the strikingly different electrical and electrochemical properties of BM-SFO and PV-SFO. Moreover, electric field control of reversible topotactic phase transformation between BM-SFO and PV-SFO is demonstrated by electric-field-induced reversible changes in surface height, conductance, and electrochemical strain response. In addition, it is also shown that the BM-SFO → PV-SFO phase transformation can be enabled by applying mechanical stress. This study therefore not only identifies a strong nanometric structure-property correlation in the mixed-phase SFO but also offers a new paradigm for the multifield control of topotactic phase transformation.