Electron-Doping Mottronics in Strongly Correlated Perovskite

Spatial evolution of the proton-coupled Mott transition in correlated oxides for neuromorphic computing

The proton-electron coupling effect induces rich spectrums of electronic states in correlated oxides, opening tempting opportunities for exploring novel devices with multifunctions. Here, via modest Pt-aided hydrogen spillover at room temperature, amounts of protons are introduced into SmNiO3-based devices. In situ structural characterizations together with first-principles calculation reveal that the local Mott transition is reversibly driven by migration and redistribution of the predoped protons. The accompanying giant resistance change results in excellent memristive behaviors under ultralow electric fields. Hierarchical tree-like memory states, an instinct displayed in bio-synapses, are further realized in the devices by spatially varying the proton concentration with electric pulses, showing great promise in artificial neural networks for solving intricate problems. Our research demonstrates the direct and effective control of proton evolution using extremely low electric field, offering an alternative pathway for modifying the functionalities of correlated oxides and constructing low-power consumption intelligent devices and neural network circuits.

Protonation-Induced Colossal Chemical Expansion and Property Tuning in NdNiO3 Revealed by Proton Concentration Gradient Thin Films

Protonation can be used to tune diverse physical and chemical properties of functional oxides. Although protonation of nickelate perovskites has been reported, details on the crystal structure of the protonated phase and a quantitative understanding of the effect of protons on physical properties are still lacking. Therefore, in this work, we select NdNiO₃ (NNO) as a model system to understand the protonation process from pristine NNO to protonated H_xNdNiO₃ (H-NNO). We used a reliable electrochemical method with well-defined reference electrode to trigger the protonation-induced phase transition. We found that the protonated H-NNO phase showed a colossal ∼13% lattice expansion caused by a large tilt of NiO₆ octahedra and displacement of Nd cations. Importantly, we further designed a novel device configuration to induce a gradient of proton concentration into a single NNO thin film to establish a quantitative correlation between the proton concentration and the lattice constant and transport property of H-NNO.

Revealing the Role of Hydrogen in Electron-Doping Mottronics for Strongly Correlated Vanadium Dioxide

Hydrogen-associated electron-doping Mottronics for d-band correlated oxides (e.g., VO₂) opens up a new paradigm to regulate the electronic functionality via directly manipulating the orbital configuration and occupancy. Nevertheless, the role of hydrogen in the Mottronic transition of VO₂ is yet unclear because opposite orbital reconfigurations toward either the metallic or highly insulating states were both reported. Herein, we demonstrate the root cause for such hydrogen-induced multiple electronic phase transitions by ¹H quantification using nuclear reaction analysis. A low hydrogenation temperature is demonstrated to be vital in achieving a large hydrogen concentration (n_H ≈ 10²² cm^-3) that further enhances the t_2g orbital occupancy to trigger electron localizations. In contrast, elevating the hydrogenation temperatures surprisingly reduces n_H to ∼10²¹ cm^-3 but forms more stable metallic H_0.06VO₂. This leads to the recognition of a weaker hydrogen interaction that triggers electron localization within VO₂ via Mottronically enhancing the orbital occupancies.

Resonant neutron reflectometry for hydrogen detection

The detection and quantification of hydrogen is becoming increasingly important in research on electronic materials and devices, following the identification of the hydrogen content as a potent control parameter for the electronic properties. However, establishing quantitative correlations between the hydrogen content and the physical properties of solids remains a formidable challenge. Here we report neutron reflectometry experiments on 50 nm thick niobium films during hydrogen loading, and show that the momentum-space position of a prominent waveguide resonance allows tracking of the absolute hydrogen content with an accuracy of about one atomic percent on a timescale of less than a minute. Resonance-enhanced neutron reflectometry thus allows fast, direct, and non-destructive measurements of the hydrogen concentration in thin-film structures, with sensitivity high enough for real-time in-situ studies.

The detection and quantification of hydrogen is becoming increasingly important in research on electronic materials and devices. Here the authors show that waveguide resonances enhance the sensitivity of neutron reflectometry, enabling fast, direct, and nondestructive measurements of hydrogen incorporation in thin-film structures.

Photoassisted Electron-Ion Synergic Doping Induced Phase Transition of n-VO2/p-GaN Thin-Film Heterojunction

As a typical correlated metal oxide, vanadium dioxide (VO₂) shows specific metal-insulator transition (MIT) properties and demonstrates great potential applications in ultrafast optoelectronic switch, resistive memory, and neuromorphic devices. Effective control of the MIT process is essential for improving the device performance. In the current study, we have first proposed a photoassisted ion-doping method to modulate the phase transition of the VO₂ layer based on the photovoltaic effect and electron-ion synergic doping in acid solution. Experimental results show that, for the prepared n-VO₂/p-GaN nanojunction, this photoassisted strategy can effectively dope the n-VO₂ layer by H⁺, Al³⁺, or Mg²⁺ ions under light radiation and trigger consecutive insulator-metal-insulator transitions. If combined with standard lithography or electron beam etching processes, selective doping with nanoscale size area can also be achieved. This photoassisted doping method not only shows a facile route for MIT modulation via a doping route under ambient conditions but also supplies some clues for photosensitive detection in the future.

What Can Electric Noise Spectroscopy Tell Us on the Physics of Perovskites?

Electric noise spectroscopy is a non-destructive and a very sensitive method for studying the dynamic behaviors of the charge carriers and the kinetic processes in several condensed matter systems, with no limitation on operating temperatures. This technique has been extensively used to investigate several perovskite compounds, manganese oxides (La1−xSrxMnO3, La0.7Ba0.3MnO3, and Pr0.7Ca0.3MnO3), and a double perovskite (Sr2FeMoO6), whose properties have recently attracted great attention. In this work are reported the results from a detailed electrical transport and noise characterizations for each of the above cited materials, and they are interpreted in terms of specific physical models, evidencing peculiar properties, such as quantum interference effects and charge density waves.