1
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Hu S, Thiesbrummel J, Pascual J, Stolterfoht M, Wakamiya A, Snaith HJ. Narrow Bandgap Metal Halide Perovskites for All-Perovskite Tandem Photovoltaics. Chem Rev 2024; 124:4079-4123. [PMID: 38527274 PMCID: PMC11009966 DOI: 10.1021/acs.chemrev.3c00667] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Revised: 03/07/2024] [Accepted: 03/15/2024] [Indexed: 03/27/2024]
Abstract
All-perovskite tandem solar cells are attracting considerable interest in photovoltaics research, owing to their potential to surpass the theoretical efficiency limit of single-junction cells, in a cost-effective sustainable manner. Thanks to the bandgap-bowing effect, mixed tin-lead (Sn-Pb) perovskites possess a close to ideal narrow bandgap for constructing tandem cells, matched with wide-bandgap neat lead-based counterparts. The performance of all-perovskite tandems, however, has yet to reach its efficiency potential. One of the main obstacles that need to be overcome is the─oftentimes─low quality of the mixed Sn-Pb perovskite films, largely caused by the facile oxidation of Sn(II) to Sn(IV), as well as the difficult-to-control film crystallization dynamics. Additional detrimental imperfections are introduced in the perovskite thin film, particularly at its vulnerable surfaces, including the top and bottom interfaces as well as the grain boundaries. Due to these issues, the resultant device performance is distinctly far lower than their theoretically achievable maximum efficiency. Robust modifications and improvements to the surfaces of mixed Sn-Pb perovskite films are therefore critical for the advancement of the field. This Review describes the origins of imperfections in thin films and covers efforts made so far toward reaching a better understanding of mixed Sn-Pb perovskites, in particular with respect to surface modifications that improved the efficiency and stability of the narrow bandgap solar cells. In addition, we also outline the important issues of integrating the narrow bandgap subcells for achieving reliable and efficient all-perovskite double- and multi-junction tandems. Future work should focus on the characterization and visualization of the specific surface defects, as well as tracking their evolution under different external stimuli, guiding in turn the processing for efficient and stable single-junction and tandem solar cell devices.
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Affiliation(s)
- Shuaifeng Hu
- Clarendon
Laboratory, Department of Physics, University
of Oxford, Oxford OX1 3PU, United
Kingdom
- Institute
for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
| | - Jarla Thiesbrummel
- Clarendon
Laboratory, Department of Physics, University
of Oxford, Oxford OX1 3PU, United
Kingdom
- Institute
for Physics and Astronomy, University of
Potsdam,14476 Potsdam-Golm, Germany
| | - Jorge Pascual
- Institute
for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
- Polymat, University of the
Basque Country UPV/EHU, 20018 Donostia-San
Sebastian, Spain
| | - Martin Stolterfoht
- Institute
for Physics and Astronomy, University of
Potsdam,14476 Potsdam-Golm, Germany
- Electronic
Engineering Department, The Chinese University
of Hong Kong, Hong Kong 999077, SAR China
| | - Atsushi Wakamiya
- Institute
for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
| | - Henry J. Snaith
- Clarendon
Laboratory, Department of Physics, University
of Oxford, Oxford OX1 3PU, United
Kingdom
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2
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Li P, Cao X, Li J, Jiao B, Hou X, Hao F, Ning Z, Bian Z, Xi J, Ding L, Wu Z, Dong H. Ligand Engineering in Tin-Based Perovskite Solar Cells. NANO-MICRO LETTERS 2023; 15:167. [PMID: 37395847 PMCID: PMC10317948 DOI: 10.1007/s40820-023-01143-0] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2023] [Accepted: 06/11/2023] [Indexed: 07/04/2023]
Abstract
Perovskite solar cells (PSCs) have attracted aggressive attention in the photovoltaic field in light of the rapid increasing power conversion efficiency. However, their large-scale application and commercialization are limited by the toxicity issue of lead (Pb). Among all the lead-free perovskites, tin (Sn)-based perovskites have shown potential due to their low toxicity, ideal bandgap structure, high carrier mobility, and long hot carrier lifetime. Great progress of Sn-based PSCs has been realized in recent years, and the certified efficiency has now reached over 14%. Nevertheless, this record still falls far behind the theoretical calculations. This is likely due to the uncontrolled nucleation states and pronounced Sn (IV) vacancies. With insights into the methodologies resolving both issues, ligand engineering-assisted perovskite film fabrication dictates the state-of-the-art Sn-based PSCs. Herein, we summarize the role of ligand engineering during each state of film fabrication, ranging from the starting precursors to the ending fabricated bulks. The incorporation of ligands to suppress Sn2+ oxidation, passivate bulk defects, optimize crystal orientation, and improve stability is discussed, respectively. Finally, the remained challenges and perspectives toward advancing the performance of Sn-based PSCs are presented. We expect this review can draw a clear roadmap to facilitate Sn-based PSCs via ligand engineering.
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Affiliation(s)
- Peizhou Li
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Xiangrong Cao
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Jingrui Li
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Bo Jiao
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Xun Hou
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Feng Hao
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, 611731, People's Republic of China
| | - Zhijun Ning
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, People's Republic of China
| | - Zuqiang Bian
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China
| | - Jun Xi
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China.
| | - Liming Ding
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China.
| | - Zhaoxin Wu
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, People's Republic of China.
| | - Hua Dong
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, People's Republic of China.
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3
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Ruggeri E, Anaya M, Gałkowski K, Abfalterer A, Chiang YH, Ji K, Andaji-Garmaroudi Z, Stranks SD. Halide Remixing under Device Operation Imparts Stability on Mixed-Cation Mixed-Halide Perovskite Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2202163. [PMID: 35866352 DOI: 10.1002/adma.202202163] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/08/2022] [Revised: 07/11/2022] [Indexed: 06/15/2023]
Abstract
Mixed-halide mixed-cation hybrid perovskites are among the most promising perovskite compositions for application in a variety of optoelectronic devices due to their high performance, low cost, and bandgap-tuning capabilities. Instability pathways such as those driven by ionic migration, however, continue to hinder their further progress. Here, an operando variable-pitch synchrotron grazing-incidence wide-angle X-ray scattering technique is used to track the surface and bulk structural changes in mixed-halide mixed-cation perovskite solar cells under continuous load and illumination. By monitoring the evolution of the material structure, it is demonstrated that halide remixing along the electric field and illumination direction during operation hinders phase segregation and limits device instability. Correlating the evolution with directionality- and depth-dependent analyses, it is proposed that this halide remixing is induced by an electrostrictive effect acting along the substrate out-of-plane direction. However, this stabilizing effect is overwhelmed by competing halide demixing processes in devices exposed to humid air or with poorer starting performance. The findings shed new light on understanding halide de- and re-mixing competitions and their impact on device longevity. These operando techniques allow real-time tracking of the structural evolution in full optoelectronic devices and unveil otherwise inaccessible insights into rapid structural evolution under external stress conditions.
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Affiliation(s)
- Edoardo Ruggeri
- Cavendish Laboratory, Department of Physics, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Miguel Anaya
- Cavendish Laboratory, Department of Physics, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
- Department of Chemical Engineering & Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge, CB3 0AS, UK
| | - Krzysztof Gałkowski
- Cavendish Laboratory, Department of Physics, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
- Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University in Toruń, Grudzia̧dzka 5, Toruń, 87-100, Poland
| | - Anna Abfalterer
- Cavendish Laboratory, Department of Physics, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Yu-Hsien Chiang
- Cavendish Laboratory, Department of Physics, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Kangyu Ji
- Cavendish Laboratory, Department of Physics, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Zahra Andaji-Garmaroudi
- Cavendish Laboratory, Department of Physics, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Samuel D Stranks
- Cavendish Laboratory, Department of Physics, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
- Department of Chemical Engineering & Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge, CB3 0AS, UK
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4
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Zhao D, Gao D, Wu X, Li B, Zhang S, Li Z, Wang Q, Wu Z, Zhang C, Choy WCH, Zhong X, He Q, Zhu Z. Efficient and Stable 3D/2D Perovskite Solar Cells through Vertical Heterostructures with (BA) 4 AgBiBr 8 Nanosheets. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2204661. [PMID: 35953892 DOI: 10.1002/adma.202204661] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2022] [Revised: 08/01/2022] [Indexed: 06/15/2023]
Abstract
Perovskite solar cells (PVSCs) have drawn great attention due to their high processability and superior photovoltaic properties. However, their further development is often hindered by severe nonradiative recombination at interfaces that decreases power conversion efficiency (PCE). To this end, a facile strategy to construct a 3D/2D vertical heterostructure to reduce the energy loss in PVSCs is developed. The heterostructure is contrived through the van der Waals integration of 2D perovskite ((BA)4 AgBiBr8 ) nanosheets onto the surface of 3D-FAPbI3 -based perovskites. The large bandgap of (BA)4 AgBiBr8 enables the formation of type-I heterojunction with 3D-FAPbI3 -based perovskites, which serves as a barrier to suppress the trap-assisted recombination at the interface. As a result, a satisfying PCE of 24.48% is achieved with an improved open-circuit voltage (VOC ) from 1.13 to 1.17 V. Moreover, the 2D perovskite nanosheets can effectively mitigate the iodide ion diffusion from perovskite to the metal electrode, hence enhancing the device stability. 3D/2D architectured devices retain ≈90% of their initial PCE under continuous illumination or heating after 1000 h, which are superior to 3D-based devices. This work provides an effective and controllable strategy to construct 3D/2D vertical heterostructure to simultaneously boost the efficiency and stability of PVSCs.
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Affiliation(s)
- Dan Zhao
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Danpeng Gao
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Xin Wu
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Bo Li
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Shoufeng Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
- Department of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, P. R. China
| | - Zhen Li
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Qi Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong
- City University of Hong Kong Shenzhen Futian Research Institute, Shenzhen, 518057, P. R. China
- TRACE EM Unit, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Zongxiao Wu
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Chunlei Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Wallace C H Choy
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, 999077, P. R. China
| | - Xiaoyan Zhong
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong
- City University of Hong Kong Shenzhen Futian Research Institute, Shenzhen, 518057, P. R. China
- TRACE EM Unit, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Zonglong Zhu
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
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5
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Liu S, Ding N, Wu Y, Zi L, Wang Y, Hu J, Xie T, Zhou D, Bai X, Xu W, Song H. Narrowband Near-Infrared Photodetectors Based on Perovskite Waveguide Devices. J Phys Chem Lett 2022; 13:6057-6063. [PMID: 35758876 DOI: 10.1021/acs.jpclett.2c01301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Organic-inorganic perovskites have attracted great interest for developing wavelength-selective photodetectors. Currently, the spectral response range of narrowband photodetectors is mainly concentrated within the visible light region, lacking near-infrared photodetectors. Here, we present perovskite narrowband near-infrared photodetectors achieved by transverse propagation of light in perovskite waveguide devices for the first time. The response spectra of photodetectors are continuously tuned from 750 to 1000 nm by changing the perovskite component and the position of the incident light with the full width at half-maximum of 25-80 nm. The theoretical and experimental results reveal that the typical perovskite photodetectors serve as an optical waveguide to confine and propagate the light, in which the long wavelength light propagates a longer distance; oppositely, the short wavelength light with the higher loss in devices fails to produce a photoresponse, owing to the wavelength dependent absorption of perovskite. This provides a new concept for designing narrowband photodetectors and will simulate new applications.
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Affiliation(s)
- Sen Liu
- College of Physics, Jilin University, Changchun 130012, China
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Nan Ding
- College of Physics, Jilin University, Changchun 130012, China
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Yanjie Wu
- College of Physics, Jilin University, Changchun 130012, China
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Lu Zi
- College of Physics, Jilin University, Changchun 130012, China
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Yue Wang
- College of Physics, Jilin University, Changchun 130012, China
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Junhua Hu
- State Centre for International Cooperation on Designer Low-carbon & Environmental Materials, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Tianyu Xie
- College of Physics, Jilin University, Changchun 130012, China
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Donglei Zhou
- College of Physics, Jilin University, Changchun 130012, China
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Xue Bai
- College of Physics, Jilin University, Changchun 130012, China
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Wen Xu
- College of Physics, Jilin University, Changchun 130012, China
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
- Key Laboratory of New Energy and Rare Earth Resource Utilization of State Ethnic Affairs Commission, Key Laboratory of Photosensitive Materials & Devices of Liaoning Province, School of Physics and Materials Engineering, Dalian Minzu University, 18 Liaohe West Road, Dalian 116600, P. R. China
| | - Hongwei Song
- College of Physics, Jilin University, Changchun 130012, China
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
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6
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Zhang Y, Zhu Y, Hu M, Pai N, Qin T, Cheng YB, Bach U, Simonov AN, Lu J. Self-Enhancement of Efficiency and Self-Attenuation of Hysteretic Behavior of Perovskite Solar Cells with Aging. J Phys Chem Lett 2022; 13:2792-2799. [PMID: 35319208 DOI: 10.1021/acs.jpclett.2c00278] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Spontaneous enhancement of the photovoltaic performance of perovskite solar cells (PSCs) after aging has been reported, but the underlying reasons for such behavior are still under debate. Herein, we demonstrate that this spontaneous improvement effect accompanied by self-attenuation of hysteresis in the current-voltage characteristics is time- and temperature-dependent. Moreover, it is universal to PSCs based on a range of mixed-ion perovskites and coupled to different hole- and electron-transporting materials. Time-resolved confocal fluorescence microscopy and other characterization techniques suggest that the "self-healing" phenomenon is accompanied by the homogenization and enhancement of the charge extraction efficiency as well as suppressed recombination throughout cm2-scale perovskite layers. These dynamic effects need to be accounted for when assessing the initial and stabilized performance of PSCs.
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Affiliation(s)
- Yuxi Zhang
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, 430070 Wuhan, P.R. China
| | - Yanqing Zhu
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, 430070 Wuhan, P.R. China
| | - Min Hu
- School of Electronic and Electrical Engineering, Hubei Province Engineering Research Center for Intelligent Micro-Nano Medical Equipment and Key Technologies, Wuhan Textile University, Wuhan 430200, P.R. China
| | - Narendra Pai
- Department of Chemical Engineering, ARC Centre of Excellence for Exciton Science, Monash University, Melbourne, Victoria 3800, Australia
| | - Tianshi Qin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, P.R. China
| | - Yi-Bing Cheng
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, P.R. China
| | - Udo Bach
- Department of Chemical Engineering, ARC Centre of Excellence for Exciton Science, Monash University, Melbourne, Victoria 3800, Australia
| | - Alexandr N Simonov
- School of Chemistry, Monash University, Melbourne, Victoria 3800, Australia
| | - Jianfeng Lu
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, 430070 Wuhan, P.R. China
- Department of Chemical Engineering, ARC Centre of Excellence for Exciton Science, Monash University, Melbourne, Victoria 3800, Australia
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7
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Wang G, Wang C, MacKenzie RCI, Zhu Z, Chen Y, Ruan S, Wen S. Using Ligand Engineering to Produce Efficient and Stable Pb-Sn Perovskite Solar Cells with Antioxidative 2D Capping Layers. ACS APPLIED MATERIALS & INTERFACES 2022; 14:14729-14738. [PMID: 35312272 DOI: 10.1021/acsami.1c24763] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Pb-Sn binary halide perovskites are a promising photovoltaic material due to their low toxicity and optical absorption spectrum well matched to the solar spectrum. However, the ready oxidation of Sn2+ to Sn4+ makes the material system currently too unstable to commercialize. Herein, ligand engineering based on antioxidative tyramine (hydrochloride, TACl) is presented for the first time to increase the stability of this material system. Using this strategy, we generate a two-dimensional (2D) capping layer on top of a standard three-dimensional Pb-Sn film. After capping, the surface defects can be passivated and the TACl-based 2D perovskite effectively protected Sn2+ from oxidation, which stabilized the Sn-Pb perovskite composition, avoiding the Pb-based perovskite formation. It is further found that the TACl treatment suppressed the halide segregation and improved the perovskite film photostability. Cell efficiency increases from 16.25 to 18.28% and device lifetime (T80) increases from less than 100 to over 1000 h. Our finding suggests that tuning ligand form/function represents a potentially highly productive direction to explore when trying to produce stable tin-based perovskite devices.
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Affiliation(s)
- Ge Wang
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, P. R. China
| | - Chen Wang
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, P. R. China
| | - Roderick C I MacKenzie
- Faculty of Engineering, University of Nottingham, University Park, Nottingham NG7 2RD, U.K
| | - Zihan Zhu
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, P. R. China
| | - Yi Chen
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, P. R. China
| | - Shengping Ruan
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, P. R. China
| | - Shanpeng Wen
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, P. R. China
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8
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Chavan RD, Prochowicz D, Yadav P, Tavakoli MM, Satapathi S. Thiocyanate-Passivated Diaminonaphthalene-Incorporated Dion-Jacobson Perovskite for Highly Efficient and Stable Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2022; 14:850-860. [PMID: 34978806 DOI: 10.1021/acsami.1c19546] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) metal halide perovskites have recently emerged as promising photovoltaic materials due to their superior ambient stability and rich structural diversity. However, power conversion efficiencies (PCEs) of the 2D perovskites solar cells (PSCs) still lag behind their three-dimensional (3D) counterpart, particularly due to the anisotropy in the charge carrier mobility and inhomogeneous energy landscape. A promising alternative is Dion-Jacobson (D-J) phase quasi-2D perovskite, where the bulky organic diammonium cations are introduced into inorganic frameworks to remove the weak van der Waals interactions between interlayers and to improve the open-circuit voltage (Voc). Although the D-J phase 2D perovskite shows a homogeneous energy landscape and better charge transport, their poor crystallinity and existence of higher trap states remain a major challenge for the development of high-efficiency solar cells device. To address this issue, here, we report the eclipsed D-J phase 2D perovskite using 1,5-diaminonaphthalene cation and subsequently treated the film with ammonium thiocyanate (NH4SCN) additive to further improve the film crystallinity, out-of-plane orientation, and carrier mobility. We observe that 2 mol NH4SCN surface treatment in NDA-based D-J phase perovskite leads to better film morphology and improved crystallinity, as confirmed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Time-resolved photoluminescence (TRPL) spectroscopy and steady-state space charge limited current (SCLC) mobility measurement reveal a significant reduction of trap-assisted nonradiative recombination and improvement of carrier mobility in the thiocyanate-passivated perovskite. Consequently, the PCE of the NH4SCN-treated (NDA)(MA)3(Pb)4(I)13 perovskite device enhanced nearly 46% from 10.3 to 15.08%. We have further studied intensity-dependent J-V characteristics, which demonstrate the reduction of ideality factor, confirming the effective suppression of trap-assisted nonradiative recombination, consistent with the transient PL results. Electrochemical impedance spectroscopy (EIS) confirms the improved charge carrier transport in NH4SCN additive-treated devices. Interestingly, our additive-engineered unsealed perovskite devices retained 75% of their initial efficiency after 1000 h of continuous storage under 60% relative humidity. This study opens up the strategy for developing high-efficiency and stable 2D perovskite solar cells.
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Affiliation(s)
- Rohit D Chavan
- Department of Physics, Indian Institute of Technology Roorkee, Roorkee, Haridwar, Uttarakhand 247667, India
| | - Daniel Prochowicz
- Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw, Poland
| | - Pankaj Yadav
- Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw, Poland
- Department of Solar Energy, School of Technology, Pandit Deendayal Petroleum University, Gandhinagar, Gujarat 382007, India
| | - Mohammad Mahdi Tavakoli
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Soumitra Satapathi
- Department of Physics, Indian Institute of Technology Roorkee, Roorkee, Haridwar, Uttarakhand 247667, India
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9
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Wu X, Li B, Zhu Z, Chueh CC, Jen AKY. Designs from single junctions, heterojunctions to multijunctions for high-performance perovskite solar cells. Chem Soc Rev 2021; 50:13090-13128. [PMID: 34676850 DOI: 10.1039/d1cs00841b] [Citation(s) in RCA: 30] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Hybrid metal-halide perovskite solar cells (PVSCs) have drawn unprecedented attention during the last decade due to their superior photovoltaic performance, facile and low-cost fabrication, and potential for roll-to-roll mass production and application for portable devices. Through collective composition, interface, and process engineering, a comprehensive understanding of the structure-property relationship and carrier dynamics of perovskites has been established to help achieve a very high certified power conversion efficiency (PCE) of 25.5%. Apart from material properties, the modified heterojunction design and device configuration evolution also play crucial roles in enhancing the efficiency. The adoption and/or modification of heterojunction structures have been demonstrated to effectively suppress the carrier recombination and potential losses in PVSCs. Moreover, the employment of multijunction structures has been shown to reduce thermalization losses, achieving a high PCE of 29.52% in perovskite/silicon tandem solar cells. Therefore, understanding the evolution of the device configuration of PVSCs from single junction, heterojunction to multijunction designs is helpful for the researchers in this field to further boost the PCE beyond 30%. Herein, we summarize the evolution and progress of the single junction, heterojunction and multijunction designs for high-performance PVSCs. A comprehensive review of the fundamentals and working principles of these designs is presented. We first introduce the basic working principles of single junction PVSCs and the intrinsic properties (such as crystallinity and defects) in perovskite films. Afterwards, the progress of diverse heterojunction designs and perovskite-based multijunction solar cells is synopsized and reviewed. Meanwhile, the challenges and strategies to further enhance the performance are also summarized. At the end, the perspectives on the future development of perovskite-based solar cells are provided. We hope this review can provide the readers with a quick catchup on this emerging solution-processable photovoltaic technology, which is currently at the transition stage towards commercialization.
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Affiliation(s)
- Xin Wu
- Department of Chemistry, City University of Hong Kong, Kowloon 999077, Hong Kong.
| | - Bo Li
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong
| | - Zonglong Zhu
- Department of Chemistry, City University of Hong Kong, Kowloon 999077, Hong Kong. .,Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon 999077, Hong Kong
| | - Chu-Chen Chueh
- Department of Chemical Engineering and Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan.
| | - Alex K-Y Jen
- Department of Chemistry, City University of Hong Kong, Kowloon 999077, Hong Kong. .,Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong.,Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon 999077, Hong Kong.,Department of Materials Science & Engineering, University of Washington, Seattle, Washington, 98195, USA
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10
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Hu S, Truong MA, Otsuka K, Handa T, Yamada T, Nishikubo R, Iwasaki Y, Saeki A, Murdey R, Kanemitsu Y, Wakamiya A. Mixed lead-tin perovskite films with >7 μs charge carrier lifetimes realized by maltol post-treatment. Chem Sci 2021; 12:13513-13519. [PMID: 34777771 PMCID: PMC8528037 DOI: 10.1039/d1sc04221a] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/01/2021] [Accepted: 09/21/2021] [Indexed: 11/21/2022] Open
Abstract
Mixed lead-tin (Pb-Sn) halide perovskites with optimum band gaps near 1.3 eV are promising candidates for next-generation solar cells. However, the performance of solar cells fabricated with Pb-Sn perovskites is restricted by the facile oxidation of Sn(ii) to Sn(iv), which induces self-doping. Maltol, a naturally occurring flavor enhancer and strong metal binding agent, was found to effectively suppress Sn(iv) formation and passivate defects in mixed Pb-Sn perovskite films. When used in combination with Sn(iv) scavenging, the maltol surface treatment led to high-quality perovskite films which showed enhanced photoluminescence intensities and charge carrier lifetimes in excess of 7 μs. The scavenging and surface treatments resulted in highly reproducible solar cell devices, with photoconversion efficiencies of up to 21.4% under AM1.5G illumination.
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Affiliation(s)
- Shuaifeng Hu
- Institute for Chemical Research, Kyoto University Gokasho, Uji Kyoto 611-0011 Japan
| | - Minh Anh Truong
- Institute for Chemical Research, Kyoto University Gokasho, Uji Kyoto 611-0011 Japan
| | - Kento Otsuka
- Institute for Chemical Research, Kyoto University Gokasho, Uji Kyoto 611-0011 Japan
| | - Taketo Handa
- Institute for Chemical Research, Kyoto University Gokasho, Uji Kyoto 611-0011 Japan
| | - Takumi Yamada
- Institute for Chemical Research, Kyoto University Gokasho, Uji Kyoto 611-0011 Japan
| | - Ryosuke Nishikubo
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University 2-1 Yamadaoka, Suita Osaka 565-0871 Japan
| | - Yasuko Iwasaki
- Institute for Chemical Research, Kyoto University Gokasho, Uji Kyoto 611-0011 Japan
| | - Akinori Saeki
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University 2-1 Yamadaoka, Suita Osaka 565-0871 Japan
| | - Richard Murdey
- Institute for Chemical Research, Kyoto University Gokasho, Uji Kyoto 611-0011 Japan
| | - Yoshihiko Kanemitsu
- Institute for Chemical Research, Kyoto University Gokasho, Uji Kyoto 611-0011 Japan
| | - Atsushi Wakamiya
- Institute for Chemical Research, Kyoto University Gokasho, Uji Kyoto 611-0011 Japan
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11
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Dey K, Roose B, Stranks SD. Optoelectronic Properties of Low-Bandgap Halide Perovskites for Solar Cell Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2102300. [PMID: 34432925 DOI: 10.1002/adma.202102300] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2021] [Revised: 06/11/2021] [Indexed: 05/24/2023]
Abstract
Riding on the coat tails of rapid developments in single-junction halide perovskite solar cells, all-perovskite multijunction solar cells have recently garnered significant attention, with the highest power-conversion efficiency already reaching 25.6%. Much of this progress has been fueled by the rapid rise in the photovoltaic performance of low-bandgap halide perovskite absorbers, materials, which, to date, have only been achievable by the partial or complete substitution of lead with tin. However, much room still exists to develop a more critical understanding of key material properties in these low-bandgap perovskites. Herein, the key optoelectronic properties of absorption, carrier generation, recombination, and transport in these tin-containing perovskites are discussed, showing that intrinsic doping distinctively impacts many of these properties, thereby rendering this class of halide perovskites unique within the family. Current understanding of the mechanisms that degrade optoelectronic performance in these materials and the corresponding devices are also summarized. These collective results highlight an important interplay between doping, defects, and degradation that will need to be controlled. Finally, the current gaps in understanding of these low-bandgap perovskites are outlined, thereby providing guidelines for further research, which will unlock their full potential for realizing a plethora of high-performance optoelectronic devices.
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Affiliation(s)
- Krishanu Dey
- Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, UK
| | - Bart Roose
- Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, UK
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Cambridge, CB3 0AS, UK
| | - Samuel D Stranks
- Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, UK
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Cambridge, CB3 0AS, UK
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12
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Wang F, Chang Q, Yun Y, Liu S, Liu Y, Wang J, Fang Y, Cheng Z, Feng S, Yang L, Yang Y, Huang W, Qin T. Hole-Transporting Low-Dimensional Perovskite for Enhancing Photovoltaic Performance. RESEARCH 2021; 2021:9797053. [PMID: 34386771 PMCID: PMC8328399 DOI: 10.34133/2021/9797053] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/25/2021] [Accepted: 04/28/2021] [Indexed: 11/08/2022]
Abstract
Halide perovskites with low-dimensionalities (2D or quasi-2D) have demonstrated outstanding stabilities compared to their 3D counterparts. Nevertheless, poor charge-transporting abilities of organic components in 2D perovskites lead to relatively low power conversion efficiency (PCE) and thus limit their applications in photovoltaics. Here, we report a novel hole-transporting low-dimensional (HT2D) perovskite, which can form a hole-transporting channel on the top surface of 3D perovskite due to self-assembly effects of metal halide frameworks. This HT2D perovskite can significantly reduce interface trap densities and enhance hole-extracting abilities of a heterojunction region between the 3D perovskite and hole-transporting layer. Furthermore, the posttreatment by HT2D can also reduce the crystal defects of perovskite and improve film morphology. As a result, perovskite solar cells (PSCs) can effectively suppress nonradiative recombination, leading to an increasement on photovoltage to >1.20 V and thus achieving >20% power conversion efficiency and >500 h continuous illumination stability. This work provides a pathway to overcome charge-transporting limitations in low-dimensional perovskites and delivers significant enhancements on performance of PSCs.
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Affiliation(s)
- Fangfang Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Qing Chang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Yikai Yun
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Sizhou Liu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - You Liu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Jungan Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Yinyu Fang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Zhengchun Cheng
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Shanglei Feng
- Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Advanced Research Institute, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, 239 Zhangheng Road, Shanghai 201204, China
| | - Lifeng Yang
- Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Advanced Research Institute, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, 239 Zhangheng Road, Shanghai 201204, China
| | - Yingguo Yang
- Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Advanced Research Institute, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, 239 Zhangheng Road, Shanghai 201204, China
| | - Wei Huang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China.,Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.,Ningbo Institute of Northwestern Polytechnical University, 818 Qingyi Road, Ningbo 315103, China
| | - Tianshi Qin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
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13
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Miyadera T, Auchi Y, Yamamoto K, Ohashi N, Koganezawa T, Yaguchi H, Yoshida Y, Chikamatsu M. Insights into Microscopic Crystal Growth Dynamics of CH 3NH 3PbI 3 under a Laser Deposition Process Revealed by In Situ X-ray Diffraction. ACS APPLIED MATERIALS & INTERFACES 2021; 13:22559-22566. [PMID: 33961389 DOI: 10.1021/acsami.1c04488] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The process dynamics for the vacuum deposition of methylammonium lead iodide (MAPbI3) perovskite was analyzed by in situ X-ray diffraction using synchrotron radiation. MAPbI3 was fabricated by alternatingly supplying PbI2 and methylammonium iodide via a laser deposition system installed at the synchrotron beamline BL46XU at SPring-8, and in situ crystallization analysis was conducted. Microscopic insights into the crystallization were obtained, including observation of Laue oscillation during the PbI2 growth and octahedral unit (PbI6) rotation during the transformation into perovskite. On the basis of this analysis, conditions that favor the construction of atomically flat MAPbI3 perovskite films were deduced.
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Affiliation(s)
- Tetsuhiko Miyadera
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Yuto Auchi
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
- Saitama University, Shimo-Okubo 255, Sakura-ku, Saitama-shi, Saitama 338-8570, Japan
| | - Kohei Yamamoto
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Noboru Ohashi
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Tomoyuki Koganezawa
- Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan
| | - Hiroyuki Yaguchi
- Saitama University, Shimo-Okubo 255, Sakura-ku, Saitama-shi, Saitama 338-8570, Japan
| | - Yuji Yoshida
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Masayuki Chikamatsu
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
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14
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Baldwin A, Delport G, Leng K, Chahbazian R, Galkowski K, Loh KP, Stranks SD. Local Energy Landscape Drives Long-Range Exciton Diffusion in Two-Dimensional Halide Perovskite Semiconductors. J Phys Chem Lett 2021; 12:4003-4011. [PMID: 33877840 PMCID: PMC8154849 DOI: 10.1021/acs.jpclett.1c00823] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2021] [Accepted: 04/12/2021] [Indexed: 05/15/2023]
Abstract
Halide perovskites are versatile semiconductors with applications including photovoltaics and light-emitting devices, having modular optoelectronic properties realizable through composition and dimensionality tuning. Layered Ruddlesden-Popper perovskites are particularly interesting due to their unique 2D character and charge carrier dynamics. However, long-range energy transport through exciton diffusion in these materials is not understood or realized. Here, local time-resolved luminescence mapping techniques are employed to visualize exciton transport in exfoliated flakes of the BA2MAn-1PbnI3n+1 perovskite family. Two distinct transport regimes are uncovered, depending on the temperature range. Above 100 K, diffusion is mediated by thermally activated hopping processes between localized states. At lower temperatures, a nonuniform energy landscape emerges in which transport is dominated by downhill energy transfer to lower-energy states, leading to long-range transport over hundreds of nanometers. Efficient, long-range, and switchable downhill transfer offers exciting possibilities for controlled directional long-range transport in these 2D materials for new applications.
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Affiliation(s)
- Alan Baldwin
- Cavendish
Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, U.K.
- Department
of Chemical Engineering & Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.
| | - Géraud Delport
- Cavendish
Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, U.K.
| | - Kai Leng
- Department
of Applied Physics, The Hong Kong Polytechnic
University, Hung Hom, Kowloon, Hong Kong, China
| | - Rosemonde Chahbazian
- Cavendish
Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, U.K.
| | - Krzysztof Galkowski
- Cavendish
Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, U.K.
- Institute
of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University, Fifth Grudziadzka St., 87-100 Toruń, Poland
| | - Kian Ping Loh
- Department
of Chemistry, National University of Singapore, Singapore, Singapore
| | - Samuel D. Stranks
- Cavendish
Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, U.K.
- Department
of Chemical Engineering & Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.
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15
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Zhao Y, Li C, Jiang J, Wang B, Shen L. Sensitive and Stable Tin-Lead Hybrid Perovskite Photodetectors Enabled by Double-Sided Surface Passivation for Infrared Upconversion Detection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2001534. [PMID: 32419331 DOI: 10.1002/smll.202001534] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2020] [Revised: 04/07/2020] [Accepted: 04/16/2020] [Indexed: 05/20/2023]
Abstract
Tin(Sn)-based perovskite is currently considered one of the most promising materials due to extending the absorption spectrum and reducing the use of lead (Pb). However, Sn2+ is easily oxidized to Sn4+ in atmosphere, causing more defects and degradation of perovskite materials. Herein, double-sided interface engineering is proposed, that is, Sn-Pb perovskite films are sandwiched between the phenethylammonium iodide (PEAI) in both the bottom and top sides. The larger organic cations of PEA+ are arranged into a perovskite surface lattice to form a 2D capping layer, which can effectively prevent the water and oxygen to destroy bulk perovskite. Meanwhile, the PEA+ can also passivate defects of iodide anions at the bottom of perovskite films, which is always present but rarely considered previously. Compared to one sided passivation, Sn-Pb hybrid perovskite photodetectors contribute a significant enhancement of performance and stability, yielding a broadband response of 300-1050 nm, a low dark current density of 1.25 × 10-3 mA cm-2 at -0.1 V, fast response speed of 35 ns, and stability beyond 240 h. Furthermore, the Sn-Pb broadband photodetectors are integrated in an infrared up-conversion system, converting near-infrared light into visible light. It is believed that a double-sided passivation method can provide new strategies to achieving high-performance perovskite photodetectors.
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Affiliation(s)
- Yan Zhao
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Chenglong Li
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Jizhong Jiang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Boming Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
| | - Liang Shen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
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