1
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Yang Z, Yu Q, Wu J, Deng H, Zhang Y, Wang W, Xian T, Huang L, Zhang J, Yuan S, Leng J, Zhan L, Jiang Z, Wang J, Zhang K, Zhou P. Ultrafast laser state active controlling based on anisotropic quasi-1D material. LIGHT, SCIENCE & APPLICATIONS 2024; 13:81. [PMID: 38584173 DOI: 10.1038/s41377-024-01423-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2023] [Revised: 03/02/2024] [Accepted: 03/12/2024] [Indexed: 04/09/2024]
Abstract
Laser state active controlling is challenging under the influence of inherent loss and other nonlinear effects in ultrafast systems. Seeking an extension of degree of freedom in optical devices based on low-dimensional materials may be a way forward. Herein, the anisotropic quasi-one-dimensional layered material Ta2PdS6 was utilized as a saturable absorber to modulate the nonlinear parameters effectively in an ultrafast system by polarization-dependent absorption. The polarization-sensitive nonlinear optical response facilitates the Ta2PdS6-based mode-lock laser to sustain two types of laser states, i.e., conventional soliton and noise-like pulse. The laser state was switchable in the single fiber laser with a mechanism revealed by numerical simulation. Digital coding was further demonstrated in this platform by employing the laser as a codable light source. This work proposed an approach for ultrafast laser state active controlling with low-dimensional material, which offers a new avenue for constructing tunable on-fiber devices.
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Affiliation(s)
- Zixin Yang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
- Nanhu Laser Laboratory, National University of Defense Technology, Changsha, 410073, China
| | - Qiang Yu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Jian Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China.
| | - Haiqin Deng
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
| | - Yan Zhang
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Wenchao Wang
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853, USA
| | - Tianhao Xian
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Luyi Huang
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Junrong Zhang
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Shuai Yuan
- Shanghai Key Lab of Modern Optical System, University of Shanghai for Science and Technology, Shanghai, 200093, China
| | - Jinyong Leng
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
- Nanhu Laser Laboratory, National University of Defense Technology, Changsha, 410073, China
| | - Li Zhan
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Zongfu Jiang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
- Nanhu Laser Laboratory, National University of Defense Technology, Changsha, 410073, China
| | - Junyong Wang
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
| | - Kai Zhang
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
| | - Pu Zhou
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China.
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2
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Luo Y, Su W, Chen F, Wu K, Zeng Y, Lu HW. Observation of Strong Anisotropic Interlayer Excitons. ACS APPLIED MATERIALS & INTERFACES 2023; 15:54808-54817. [PMID: 37975532 DOI: 10.1021/acsami.3c12429] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/19/2023]
Abstract
Anisotropic interlayer excitons had been theoretically predicted to exist in two-dimensional (2D) anisotropy/isotropy van der Waals heterojunctions. However, experimental results consolidating the theoretical prediction and exploring the related anisotropic optoelectronic response have not been reported so far. Herein, strong photoluminescence (PL) of anisotropic interlayer excitons is observed in a symmetric anisotropy/isotropy/anisotropy heterojunction exemplified by 3L-ReS2/1L-MoS2/3L-ReS2 using monolayer (1L) MoS2 and trilayer (3L) ReS2 as components. Sharp interlayer exciton PL peaks centered at ∼1.64, ∼1.61, and ∼1.57 eV are only observed at low temperatures of ≤120 K and become more pronounced as the temperature decreases. These interlayer excitons exhibit strong anisotropic PL intensity variations with periodicities of 180° as functions of the incident laser polarization angles. The polarization ratios of these interlayer excitons are calculated to be 1.33-1.45. Our study gives new insight into the manipulation of excitons in 2D materials and paves a new way for a rational design of novel anisotropic optoelectronic devices.
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Affiliation(s)
- Yu Luo
- School of Sciences, Hangzhou Dianzi University, 310018 Hangzhou, China
| | - Weitao Su
- School of Sciences, Hangzhou Dianzi University, 310018 Hangzhou, China
| | - Fei Chen
- College of Materials and Environmental Engineering, Hangzhou Dianzi University, 310018 Hangzhou, China
| | - Ke Wu
- School of Sciences, Hangzhou Dianzi University, 310018 Hangzhou, China
| | - Yijie Zeng
- School of Sciences, Hangzhou Dianzi University, 310018 Hangzhou, China
| | - Hong-Wei Lu
- School of Sciences, Hangzhou Dianzi University, 310018 Hangzhou, China
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3
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Shi X, Li W, Lan X, Guo Q, Zhu G, Du W, Wang T. Room-Temperature Polarized Light-Emitting Diode-Based on a 2D Monolayer Semiconductor. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2301949. [PMID: 37357166 DOI: 10.1002/smll.202301949] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/06/2023] [Revised: 06/05/2023] [Indexed: 06/27/2023]
Abstract
Transition metal dichalcogenide (TMD)-based 2D monolayer semiconductors, with the direct bandgap and the large exciton binding energy, are widely studied to develop miniaturized optoelectronic devices, e.g., nanoscale light-emitting diodes (LEDs). However, in terms of polarization control, it is still quite challenging to realize polarized electroluminescence (EL) from TMD monolayers, especially at room temperature. Here, by using Ag nanowire top electrode, polarized LEDs are demonstrated based on 2D monolayer semiconductors (WSe2 , MoSe2 , and WS2 ) at room temperature with a degree of polarization (DoP) ranging from 50% to 63%. The highly anisotropic EL emission comes from the 2D/Ag interface via the electron/hole injection and recombination process, where the EL emission is also enhanced by the polarization-dependent plasmonic resonance of the Ag nanowire. These findings introduce new insights into the design of polarized 2D LED devices at room temperature and may promote the development of miniaturized 2D optoelectronic devices.
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Affiliation(s)
- Xiuqi Shi
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Wenfei Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Xinhui Lan
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Qianqian Guo
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Guangpeng Zhu
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Wei Du
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Tao Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
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4
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Qin Z, Wang T, Gao H, Li Y, Dong H, Hu W. Organic Polarized Light-Emitting Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2301955. [PMID: 37358028 DOI: 10.1002/adma.202301955] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2023] [Revised: 05/13/2023] [Indexed: 06/27/2023]
Abstract
Electrically driven polarized light-emitting sources are central to various applications including quantum computers, optical communication, and 3D displays, but serious challenges remain due to the inevitable incorporation of complex optical elements in conventional devices. Here, organic polarized light-emitting transistors (OPLETs), a kind of novel device that integrates the functions of organic field-effect transistors, organic light-emitting diodes, and polarizers into one unique device, are demonstrated with a degree of polarization (DOP) as high as 0.97, which is comparable to completely linearly polarized light (DOP = 1). Under the modulation of gate voltage, robust and efficient polarization emission is proven, ascribed to the intrinsic in-plane anisotropy of the molecular transition dipole moment in organic semiconductors and the open-ended feature of OPLETs instead of other factors. As a result, high-contrast optical imaging and anti-counterfeiting security are successfully demonstrated based on OPLETs, establishing a new direction for photonic and electronic integration toward on-chip miniaturized optoelectronic applications.
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Affiliation(s)
- Zhengsheng Qin
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tianyu Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Haikuo Gao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yang Li
- Normal College, Shenyang University, Shenyang, 110044, China
| | - Huanli Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin, 300072, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China
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5
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Wen T, Zhang M, Li J, Jiao C, Pei S, Wang Z, Xia J. Orientation-polarization dependence of pressure-induced Raman anomalies in anisotropic 2D ReS 2. NANOSCALE HORIZONS 2023; 8:516-521. [PMID: 36790202 DOI: 10.1039/d2nh00584k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
We report an in situ high-pressure (0-30.24 GPa) optical study of the 2D ReS2 crystal under four specific configurations of sample orientation and laser polarization. Unlike the horizontal measurement configuration that has been widely used, under the vertical sample configuration we observe the anomalous disappearance behavior of Raman modes. Through analyzing the peak evolution under different configurations with tensor calculations, we identify the effect of pressure on different components in the full 3 × 3 Raman tensor of the anisotropic ReS2 crystal. These results provide new evidence on the remarkable tunability of pressure engineering on the crystal structure, and our methods offer an additional degree of freedom for studying pressure engineering on 2D anisotropic materials.
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Affiliation(s)
- Ting Wen
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Maodi Zhang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Jing Li
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China.
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6
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Yan J, Yang X, Liu X, Du C, Qin F, Yang M, Zheng Z, Li J. Van der Waals Heterostructures With Built-In Mie Resonances For Polarization-Sensitive Photodetection. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2207022. [PMID: 36683160 PMCID: PMC10037953 DOI: 10.1002/advs.202207022] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Revised: 12/28/2022] [Indexed: 06/17/2023]
Abstract
Few-layer transition metal dichalcogenides (TMDs) and their combination as van der Waals heterostructures provide a promising platform for high-performance optoelectronic devices. However, the ultrathin thickness of TMD flakes limits efficient light trapping and absorption, which triggers the hybrid construction with optical resonant cavities for enhanced light absorption. The optical structure enriched photodetectors can also be wavelength- and polarization-sensitive but require complicated fabrication. Herein, a new-type TMD-based photodetector embedded with nanoslits is proposed to enhance light trapping. Taking ReS2 as an example, strong anisotropic Mie-type optical responses arising from the intrinsic in-plane anisotropy and nanoslit-enhanced anisotropy are discovered. Owing to the nanoslit-enhanced optical resonances and band engineering, excellent photodetection performances are demonstrated with high responsivity of 27 A W-1 and short rise/decay times of 3.7/3.7 ms. More importantly, through controlling the angle between the nanoslit orientation and the polarization direction to excite different resonant modes, polarization-sensitive photodetectors with anisotropy ratios from 5.9 to 12.6 can be achieved, representing one of the most polarization-sensitive TMD-based photodetectors. The depth and orientation of nanoslits are demonstrated crucial for optimizing the anisotropy ratio. The findings bring an effective scheme to construct high-performance and polarization-sensitive photodetectors.
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Affiliation(s)
- Jiahao Yan
- Institute of NanophotonicsJinan UniversityGuangzhou511443P. R. China
| | - Xinzhu Yang
- Institute of NanophotonicsJinan UniversityGuangzhou511443P. R. China
| | - Xinyue Liu
- Institute of NanophotonicsJinan UniversityGuangzhou511443P. R. China
| | - Chun Du
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and CommunicationsInstitute of Photonics TechnologyJinan UniversityGuangzhou511443P. R. China
| | - Fei Qin
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and CommunicationsInstitute of Photonics TechnologyJinan UniversityGuangzhou511443P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Information Photonics TechnologySchool of Materials and EnergyGuangdong University of TechnologyGuangzhou510006P. R. China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics TechnologySchool of Materials and EnergyGuangdong University of TechnologyGuangzhou510006P. R. China
| | - Jingbo Li
- Institute of SemiconductorsSouth China Normal UniversityGuangzhou510631P. R. China
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7
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Coriolano A, Polimeno L, Pugliese M, Cannavale A, Trypogeorgos D, Di Renzo A, Ardizzone V, Rizzo A, Ballarini D, Gigli G, Maiorano V, Rosyadi AS, Chuang CA, Ho CH, De Marco L, Sanvitto D, De Giorgi M. Rydberg polaritons in ReS 2 crystals. SCIENCE ADVANCES 2022; 8:eadd8857. [PMID: 36417518 PMCID: PMC9683695 DOI: 10.1126/sciadv.add8857] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/13/2022] [Accepted: 10/25/2022] [Indexed: 05/31/2023]
Abstract
Rhenium disulfide belongs to group VII transition metal dichalcogenides (TMDs) with attractive properties such as exceptionally high refractive index and remarkable oscillator strength, large in-plane birefringence, and good chemical stability. Unlike most other TMDs, the peculiar optical properties of rhenium disulfide persist from bulk to the monolayer, making this material potentially suitable for applications in optical devices. In this work, we demonstrate with unprecedented clarity the strong coupling between cavity modes and excited states, which results in a strong polariton interaction, showing the interest of these materials as a solid-state counterpart of Rydberg atomic systems. Moreover, we definitively clarify the nature of important spectral features, shedding light on some controversial aspects or incomplete interpretations and demonstrating that their origin is due to the interesting combination of the very high refractive index and the large oscillator strength expressed by these TMDs.
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Affiliation(s)
- Annalisa Coriolano
- CNR-NANOTEC, Institute of Nanotechnology, Via Monteroni, Lecce 73100, Italy
- Dipartimento di Matematica e Fisica E. De Giorgi, Università del Salento, Campus Ecotekne, Via Monteroni, Lecce 73100, Italy
| | - Laura Polimeno
- CNR-NANOTEC, Institute of Nanotechnology, Via Monteroni, Lecce 73100, Italy
| | - Marco Pugliese
- CNR-NANOTEC, Institute of Nanotechnology, Via Monteroni, Lecce 73100, Italy
- Dipartimento di Matematica e Fisica E. De Giorgi, Università del Salento, Campus Ecotekne, Via Monteroni, Lecce 73100, Italy
| | - Alessandro Cannavale
- CNR-NANOTEC, Institute of Nanotechnology, Via Monteroni, Lecce 73100, Italy
- Department of Civil Engineering Sciences and Architecture, Polytechnic University of Bari, Bari, Italy
| | | | - Anna Di Renzo
- CNR-NANOTEC, Institute of Nanotechnology, Via Monteroni, Lecce 73100, Italy
- Dipartimento di Matematica e Fisica E. De Giorgi, Università del Salento, Campus Ecotekne, Via Monteroni, Lecce 73100, Italy
| | - Vincenzo Ardizzone
- CNR-NANOTEC, Institute of Nanotechnology, Via Monteroni, Lecce 73100, Italy
- Dipartimento di Matematica e Fisica E. De Giorgi, Università del Salento, Campus Ecotekne, Via Monteroni, Lecce 73100, Italy
| | - Aurora Rizzo
- CNR-NANOTEC, Institute of Nanotechnology, Via Monteroni, Lecce 73100, Italy
| | - Dario Ballarini
- CNR-NANOTEC, Institute of Nanotechnology, Via Monteroni, Lecce 73100, Italy
| | - Giuseppe Gigli
- CNR-NANOTEC, Institute of Nanotechnology, Via Monteroni, Lecce 73100, Italy
- Dipartimento di Matematica e Fisica E. De Giorgi, Università del Salento, Campus Ecotekne, Via Monteroni, Lecce 73100, Italy
| | - Vincenzo Maiorano
- CNR-NANOTEC, Institute of Nanotechnology, Via Monteroni, Lecce 73100, Italy
| | - Adzilah Shahna Rosyadi
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan
| | - Ching-An Chuang
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan
| | - Ching-Hwa Ho
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan
| | - Luisa De Marco
- CNR-NANOTEC, Institute of Nanotechnology, Via Monteroni, Lecce 73100, Italy
| | - Daniele Sanvitto
- CNR-NANOTEC, Institute of Nanotechnology, Via Monteroni, Lecce 73100, Italy
| | - Milena De Giorgi
- CNR-NANOTEC, Institute of Nanotechnology, Via Monteroni, Lecce 73100, Italy
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8
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Incident Angle Dependence of the Waveform of the Polarization-Sensitive Photoresponse in CuSe/Se Thin Film. APPLIED SCIENCES-BASEL 2022. [DOI: 10.3390/app12146869] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Abstract
The results of studying the waveforms of longitudinal and transverse photocurrent pulses generated in thin, semitransparent CuSe/Se films as a function of the angle of incidence (α) of a femtosecond laser beam at linear and circular polarizations are presented. It has been established that the durations of unipolar longitudinal photocurrent pulses at linear and circular polarizations of laser pumping do not depend on the angle α. It is shown that the evolution of the temporal profile of the helicity-sensitive transverse photocurrent with a change in α strongly depends on polarization. At linear polarization, the shape of the unipolar pulses remains virtually constant; however, at circular polarization, the generation of unipolar and bipolar pulses is possible, with the waveforms strongly depending on the angle α. The influence of the incidence angle on the waveforms of transverse photocurrent pulses is explained by the transformation of linear and circular polarization into an elliptical upon the refraction of light at the air/semitransparent film interface and by the interplay of photocurrents arising due to linear and circular surface photogalvanic effects in the film. The presented findings can be utilized to develop polarization and incidence angle-sensitive photovoltaic devices.
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9
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Wen T, Li J, Deng Q, Jiao C, Zhang M, Wu S, Lin L, Huang W, Xia J, Wang Z. Analyzing Anisotropy in 2D Rhenium Disulfide Using Dichromatic Polarized Reflectance. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2108028. [PMID: 35315231 DOI: 10.1002/smll.202108028] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/27/2021] [Revised: 03/01/2022] [Indexed: 06/14/2023]
Abstract
In-plane anisotropy in 2D rhenium disulfide (ReS2 ) offers intriguing opportunities for designing future electronic and optical devices, and toward such applications, it is crucial to identify the crystal orientation in such 2D anisotropic materials. Existing spectroscopy or electron microscopy methods for determining the crystalline orientation often require complicated sample preparing procedures and specialized equipment, which could sometimes limit their application. In this work, a dichromatic polarized reflectance method is demonstrated, which can quickly and accurately resolve the crystal orientation (Re-Re chain) in 2D ReS2 crystals with different thicknesses. Furthermore, it can be readily extended to multi-chromatic schemes to achieve greater measurement capability and can be easily tailored to work for different 2D materials. The method offers a simple and effective approach for studying anisotropy in 2D materials.
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Affiliation(s)
- Ting Wen
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Jing Li
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Qingyang Deng
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Maodi Zhang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Song Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Lin Lin
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, 313001, P. R. China
| | - Wen Huang
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, 313001, P. R. China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
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10
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Kim C, Sung M, Kim SY, Lee BC, Kim Y, Kim D, Kim Y, Seo Y, Theodorou C, Kim GT, Joo MK. Restricted Channel Migration in 2D Multilayer ReS 2. ACS APPLIED MATERIALS & INTERFACES 2021; 13:19016-19022. [PMID: 33861077 DOI: 10.1021/acsami.1c02111] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
When thickness-dependent carrier mobility is coupled with Thomas-Fermi screening and interlayer resistance effects in two-dimensional (2D) multilayer materials, a conducting channel migrates from the bottom surface to the top surface under electrostatic bias conditions. However, various factors including (i) insufficient carrier density, (ii) atomically thin material thickness, and (iii) numerous oxide traps/defects considerably limit our deep understanding of the carrier transport mechanism in 2D multilayer materials. Herein, we report the restricted conducting channel migration in 2D multilayer ReS2 after a constant voltage stress of gate dielectrics is applied. At a given gate bias condition, a gradual increase in the drain bias enables a sensitive change in the interlayer resistance of ReS2, leading to a modification of the shape of the transconductance curves, and consequently, demonstrates the conducting channel migration along the thickness of ReS2 before the stress. Meanwhile, this distinct conduction feature disappears after stress, indicating the formation of additional oxide trap sites inside the gate dielectrics that degrade the carrier mobility and eventually restrict the channel migration. Our theoretical and experimental study based on the resistor network model and Thomas-Fermi charge screening theory provides further insights into the origins of channel migration and restriction in 2D multilayer devices.
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Affiliation(s)
- Chulmin Kim
- School of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Moonsoo Sung
- School of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Soo Yeon Kim
- Department of Applied Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea
| | - Byung Chul Lee
- School of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Yeonsu Kim
- School of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Doyoon Kim
- School of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Yeeun Kim
- Department of Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea
| | - Youkyung Seo
- Department of Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea
| | - Christoforos Theodorou
- University Grenoble Alpes, University Savoie Mont Blanc, CNRS, Grenoble INP, IMEP-LAHC, F-38000 Grenoble, France
| | - Gyu-Tae Kim
- School of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Min-Kyu Joo
- Department of Applied Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea
- Institute of Advanced Materials and Systems, Sookmyung Women's University, Seoul 04310, Republic of Korea
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Lv L, Yu J, Hu M, Yin S, Zhuge F, Ma Y, Zhai T. Design and tailoring of two-dimensional Schottky, PN and tunnelling junctions for electronics and optoelectronics. NANOSCALE 2021; 13:6713-6751. [PMID: 33885475 DOI: 10.1039/d1nr00318f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Owing to their superior carrier mobility, strong light-matter interactions, and flexibility at the atomically thin thickness, two-dimensional (2D) materials are attracting wide interest for application in electronic and optoelectronic devices, including rectifying diodes, transistors, memory, photodetectors, and light-emitting diodes. At the heart of these devices, Schottky, PN, and tunneling junctions are playing an essential role in defining device function. Intriguingly, the ultrathin thickness and unique van der Waals (vdW) interlayer coupling in 2D materials has rendered enormous opportunities for the design and tailoring of various 2D junctions, e.g. using Lego-like hetero-stacking, surface decoration, and field-effect modulation methods. Such flexibility has led to marvelous breakthroughs during the exploration of 2D electronics and optoelectronic devices. To advance further, it is imperative to provide an overview of existing strategies for the engineering of various 2D junctions for their integration in the future. Thus, in this review, we provide a comprehensive survey of previous efforts toward 2D Schottky, PN, and tunneling junctions, and the functional devices built from them. Though these junctions exhibit similar configurations, distinct strategies have been developed for their optimal figures of merit based on their working principles and functional purposes.
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Affiliation(s)
- Liang Lv
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
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Abstract
Low-symmetry two-dimensional (2D) materials have exhibited novel anisotropic properties in optics, electronics, and mechanics. Such characteristics have opened up new avenues for fundamental research on nano-electronic devices. In-plane thermal conductivity plays a pivotal role in the electronic performance of devices. This article reports a systematic study of the in-plane anisotropic thermal conductivity of PdSe2 with a pentagonal, low-symmetry structure. An in-plane anisotropic ratio up to 1.42 was observed by the micro-Raman thermometry method. In the Raman scattering spectrum, we extracted a frequency shift from the Ag3 mode with the most sensitivity to temperature. The anisotropic thermal conductivity was deduced by analyzing the heat diffusion equations of suspended PdSe2 films. With the increase in thickness, the anisotropy ratio decreased gradually because the thermal conductivity in the x-direction increased faster than in the y-direction. The anisotropic thermal conductivity provides thermal management strategies for the next generation of nano-electronic devices based on PdSe2.
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