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Zhang H, Guégan F, Wang J, Frapper G. Rational design of 2D Janus P3 m1 M 2N 3 (M = Cu, Zr, and Hf) and their surface-functionalized derivatives: ferromagnetic, piezoelectric, and photocatalytic properties. Phys Chem Chem Phys 2024; 26:14675-14683. [PMID: 38716510 DOI: 10.1039/d4cp00544a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/23/2024]
Abstract
In this study, first-principles calculations were employed to rationally design two-dimensional (2D) Janus transition metal nitrides of P3m1 M2N3 phases, where M is a d-block element (Sc-Zn, Y-Cd, Hf-Hg). Among the 29 examined 2D M2N3, three 2D phases, namely P3m1 Cu2N3, Zr2N3, and Hf2N3, exhibit excellent thermodynamic, dynamic, mechanical, and thermal stabilities. These novel Janus 2D materials exhibit ferromagnetic metallic and half-metallic behavior. The related 2D Janus surface-functionalized derivatives, Cu2N3H, Cu2N3F, Cu2N3Cl, Zr2N3H, Hf2N3H, and Hf2N3F, are all dynamically stable. The 2D Janus P3m1 phases of Zr2N3H, Hf2N3H, and Hf2N3F, all with M in the +IV oxidation state, act as semiconductors in the visible region, with energy band gaps of 2.26-2.70 eV at the HSE06 level of theory. On the other hand, the 2D Janus P3m1 Cu2N3X phases (where X = H, F, and Cl) are ferromagnetic half-metals. Additionally, it has been unveiled that there are high hole mobilities (∼6 × 103 cm2 V-1 s-1) derived from the moderate deformation potential and effective mass in the 2D Janus P3m1 Zr2N3H, Hf2N3H, and Hf2N3F phases. Uniaxial strain engineering has demonstrated the outstanding in-plane piezoelectric properties of 2D Janus P3m1 Zr2N3H, Hf2N3H, and Hf2N3F with high d11 values (∼99.91 pm V-1). Furthermore, the desirable band-edge alignments and high anisotropic carrier mobilities of 2D Janus P3m1 Zr2N3H, Hf2N3H, and Hf2N3F phases indicate their potential as visible light-driven photocatalysts for water splitting reactions on different facets. These properties render 2D Janus P3m1 Zr2N3H, Hf2N3H, and Hf2N3F phases promising for use in optoelectronics, piezoelectric sensing, and photocatalysis applications.
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Affiliation(s)
- Heng Zhang
- State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi 710072, People's Republic of China.
- Institute of Semiconductors, Henan Academy of Sciences, Zhengzhou, Henan 450000, People's Republic of China
- Applied Quantum Chemistry group, E4, IC2MP, UMR 7285 Poitiers University-CNRS, 4 rue Michel Brunet TSA 51106, 86073 Poitiers Cedex 9, France.
| | - Frédéric Guégan
- Applied Quantum Chemistry group, E4, IC2MP, UMR 7285 Poitiers University-CNRS, 4 rue Michel Brunet TSA 51106, 86073 Poitiers Cedex 9, France.
| | - Junjie Wang
- State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi 710072, People's Republic of China.
| | - Gilles Frapper
- Applied Quantum Chemistry group, E4, IC2MP, UMR 7285 Poitiers University-CNRS, 4 rue Michel Brunet TSA 51106, 86073 Poitiers Cedex 9, France.
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Sayyad M, Kopaczek J, Gilardoni CM, Chen W, Xiong Y, Yang S, Watanabe K, Taniguchi T, Kudrawiec R, Hautier G, Atatüre M, Tongay SA. The Defects Genome of Janus Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403583. [PMID: 38743929 DOI: 10.1002/adma.202403583] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/10/2024] [Revised: 05/02/2024] [Indexed: 05/16/2024]
Abstract
2D Janus Transition Metal Dichalcogenides (TMDs) have attracted much interest due to their exciting quantum properties arising from their unique two-faced structure, broken-mirror symmetry, and consequent colossal polarization field within the monolayer. While efforts are made to achieve high-quality Janus monolayers, the existing methods rely on highly energetic processes that introduce unwanted grain-boundary and point defects with still unexplored effects on the material's structural and excitonic properties Through high-resolution scanning transmission electron microscopy (HRSTEM), density functional theory (DFT), and optical spectroscopy measurements; this work introduces the most encountered and energetically stable point defects. It establishes their impact on the material's optical properties. HRSTEM studies show that the most energetically stable point defects are single (VS and VSe) and double chalcogen vacancy (VS -VSe), interstitial defects (Mi), and metal impurities (MW) and establish their structural characteristics. DFT further establishes their formation energies and related localized bands within the forbidden band. Cryogenic excitonic studies on h-BN-encapsulated Janus monolayers offer a clear correlation between these structural defects and observed emission features, which closely align with the results of the theory. The overall results introduce the defect genome of Janus TMDs as an essential guideline for assessing their structural quality and device properties.
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Affiliation(s)
- Mohammed Sayyad
- Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona, AZ 85287, USA
| | - Jan Kopaczek
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeże Stanisława Wyspiańskiego 27, Wroclaw, 50-370, Poland
| | - Carmem M Gilardoni
- Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Weiru Chen
- Thayer School of Engineering, Dartmouth College, Hanover, NH 03755, USA
| | - Yihuang Xiong
- Thayer School of Engineering, Dartmouth College, Hanover, NH 03755, USA
| | - Shize Yang
- Aberration Corrected Electron Microscopy Core, Yale University, New Haven, CT 06516, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Robert Kudrawiec
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeże Stanisława Wyspiańskiego 27, Wroclaw, 50-370, Poland
| | - Geoffroy Hautier
- Thayer School of Engineering, Dartmouth College, Hanover, NH 03755, USA
| | - Mete Atatüre
- Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Seth Ariel Tongay
- Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona, AZ 85287, USA
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Wang X, Chen A, Wu X, Zhang J, Dong J, Zhang L. Synthesis and Modulation of Low-Dimensional Transition Metal Chalcogenide Materials via Atomic Substitution. NANO-MICRO LETTERS 2024; 16:163. [PMID: 38546814 PMCID: PMC10978568 DOI: 10.1007/s40820-024-01378-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/20/2023] [Accepted: 02/17/2024] [Indexed: 04/01/2024]
Abstract
In recent years, low-dimensional transition metal chalcogenide (TMC) materials have garnered growing research attention due to their superior electronic, optical, and catalytic properties compared to their bulk counterparts. The controllable synthesis and manipulation of these materials are crucial for tailoring their properties and unlocking their full potential in various applications. In this context, the atomic substitution method has emerged as a favorable approach. It involves the replacement of specific atoms within TMC structures with other elements and possesses the capability to regulate the compositions finely, crystal structures, and inherent properties of the resulting materials. In this review, we present a comprehensive overview on various strategies of atomic substitution employed in the synthesis of zero-dimensional, one-dimensional and two-dimensional TMC materials. The effects of substituting elements, substitution ratios, and substitution positions on the structures and morphologies of resulting material are discussed. The enhanced electrocatalytic performance and photovoltaic properties of the obtained materials are also provided, emphasizing the role of atomic substitution in achieving these advancements. Finally, challenges and future prospects in the field of atomic substitution for fabricating low-dimensional TMC materials are summarized.
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Affiliation(s)
- Xuan Wang
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Akang Chen
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - XinLei Wu
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Jiatao Zhang
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China.
| | - Jichen Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, People's Republic of China.
| | - Leining Zhang
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China.
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Kaneda M, Zhang W, Liu Z, Gao Y, Maruyama M, Nakanishi Y, Nakajo H, Aoki S, Honda K, Ogawa T, Hashimoto K, Endo T, Aso K, Chen T, Oshima Y, Yamada-Takamura Y, Takahashi Y, Okada S, Kato T, Miyata Y. Nanoscrolls of Janus Monolayer Transition Metal Dichalcogenides. ACS NANO 2024; 18:2772-2781. [PMID: 38230852 DOI: 10.1021/acsnano.3c05681] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
Tubular structures of transition metal dichalcogenides (TMDCs) have attracted attention in recent years due to their emergent physical properties, such as the giant bulk photovoltaic effect and chirality-dependent superconductivity. To understand and control these properties, it is highly desirable to develop a sophisticated method to fabricate TMDC tubular structures with smaller diameters and a more uniform crystalline orientation. For this purpose, the rolling up of TMDC monolayers into nanoscrolls is an attractive approach to fabricating such a tubular structure. However, the symmetric atomic arrangement of a monolayer TMDC generally makes its tubular structure energetically unstable due to considerable lattice strain in curved monolayers. Here, we report the fabrication of narrow nanoscrolls by using Janus TMDC monolayers, which have an out-of-plane asymmetric structure. Janus WSSe and MoSSe monolayers were prepared by the plasma-assisted surface atom substitution of WSe2 and MoSe2 monolayers, respectively, and then were rolled by solution treatment. The multilayer tubular structures of Janus nanoscrolls were revealed by scanning transmission electron microscopy observations. Atomic resolution elemental analysis confirmed that the Janus monolayers were rolled up with the Se-side surface on the outside. We found that the present nanoscrolls have the smallest diameter of about 5 nm, which is almost the same as the value predicted by the DFT calculation. The difference in work functions between the S- and Se-side surfaces was measured by Kelvin probe force microscopy, which is in good agreement with the theoretical prediction. Strong interlayer interactions and anisotropic optical responses of the Janus nanoscrolls were also revealed by Raman and photoluminescence spectroscopy.
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Affiliation(s)
- Masahiko Kaneda
- Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
| | - Wenjin Zhang
- Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
| | - Zheng Liu
- Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan
| | - Yanlin Gao
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Mina Maruyama
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Yusuke Nakanishi
- Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
| | - Hiroshi Nakajo
- Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
- Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577, Japan
- KOKUSAI ELCTRIC CORP., Toyama 939-2393, Japan
| | - Soma Aoki
- Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
- Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577, Japan
| | - Kota Honda
- Department of Electronics, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
| | - Tomoya Ogawa
- Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
| | - Kazuki Hashimoto
- Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
| | - Takahiko Endo
- Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
| | - Kohei Aso
- School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
| | - Tongmin Chen
- School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
| | - Yoshifumi Oshima
- School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
| | - Yukiko Yamada-Takamura
- School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
| | - Yasufumi Takahashi
- Department of Electronics, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
- WPI Nano Life Science Institute (WPI-NanoLSI), Kanazawa University, Kanazawa 920-1192, Japan
| | - Susumu Okada
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Toshiaki Kato
- Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
- Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan
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Zhao GD, Fu W, Li Y, Liu X, Jia F, Hu T, Ren W. Hidden Valley Polarization, Piezoelectricity, and Dzyaloshinskii-Moriya Interactions of Janus Vanadium Dichalcogenides. ACS APPLIED MATERIALS & INTERFACES 2024; 16:1268-1275. [PMID: 38113122 DOI: 10.1021/acsami.3c09270] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Due to the lack of inversion symmetry and the discovery of room-temperature ferromagnetism, two-dimensional semiconducting vanadium-based van der Waals transition-metal dichalcogenides (V-TMDs) are drawing attention for their possible application in spintronics and valleytronics. Here, we show the functional properties enriched by the broken inversion, out-of-plane mirror, and time-reversal symmetries of Janus H-VXY TMDs (X, Y = S, Se, Te). By first-principles calculations, we reveal the intrinsic xy easy-plane magnetism of the Janus vanadium-based TMD monolayers and systematically study their hidden valley polarization and giant magneto band structure. Their strong nearest-neighbor exchange strengths lead to near-room-temperature magnetic phase transitions. The Janus H-VXY system also exhibits piezoelectricity with nonzero e31 and e21. Interestingly, it is found that the right-handed Dzyaloshinskii-Moriya interaction has nonzero in-plane components in our Janus system, with fluctuating magnitudes determined by competence between relaxed bond-angle and atomic index of ligands.
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Affiliation(s)
- Guo-Dong Zhao
- Department of Physics, School of Materials Science and Engineering, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Weida Fu
- Department of Physics, School of Materials Science and Engineering, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
| | - Yongchang Li
- Department of Physics, School of Materials Science and Engineering, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
| | - Xingen Liu
- Department of Physics, School of Materials Science and Engineering, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
- School of Mathematical Information, Shaoxing University, Shaoxing 312000, China
| | - Fanhao Jia
- Department of Physics, School of Materials Science and Engineering, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
| | - Tao Hu
- Department of Physics, School of Materials Science and Engineering, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
| | - Wei Ren
- Department of Physics, School of Materials Science and Engineering, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
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Khengar SJ, Parmar PR, Modi N, Thakor PB. A computational study of 2D group-III ternary chalcogenide monolayer compounds MNTe 2(M, N = In, Ga, Al). JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:475702. [PMID: 37536323 DOI: 10.1088/1361-648x/aced2f] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2023] [Accepted: 08/03/2023] [Indexed: 08/05/2023]
Abstract
First principle calculations of novel two-dimensional (2D) group-III ternary chalcogenide monolayer (G3TCM) compounds have been carried out using density functional theory. The 2D hexagonal structure has a honeycomb-like appearance from both the top and bottom views. Both pristine and G3TCM compounds are energetically favourable and have been found to be dynamically stable via phonon calculations. Theab-initiomolecular dynamics calculations show the thermodynamical stability of the G3TCM compounds. The G3TCM compounds exhibit semiconductor behaviour with a decreased indirect bandgap compared to the pristine monolayers. Chalcogen atoms contribute mainly to the valence bands, while group-III atoms have a major contribution to the conduction band. A red shift has been observed in the absorption of light, mainly in the visible and ultraviolet regions, and the refractive index is increased compared to the pristine material. Both pristine and G3TCM compounds have been found to be more active in the ultraviolet region, and low reflection has been observed. In the 6-8 eV range of the ultraviolet region, zero reflection and the highest absorption are observed. The monolayer has shown potential applications in optoelectronics devices as an ultraviolet and visible light detector, absorber, coating material, and more. The band alignment of the 2D G3TCM monolayer is calculated to observe its photo-catalyst behaviour.
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Affiliation(s)
- S J Khengar
- Department of Physics, Veer Narmad South Gujarat University, Surat 395007, Gujarat, India
| | - P R Parmar
- Department of Physics, Veer Narmad South Gujarat University, Surat 395007, Gujarat, India
| | - Nidhi Modi
- Department of Physics, Sir P.T. Sarvajanik College of Science, Surat 395001, Gujarat, India
| | - P B Thakor
- Department of Physics, Veer Narmad South Gujarat University, Surat 395007, Gujarat, India
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Montblanch ARP, Barbone M, Aharonovich I, Atatüre M, Ferrari AC. Layered materials as a platform for quantum technologies. NATURE NANOTECHNOLOGY 2023:10.1038/s41565-023-01354-x. [PMID: 37322143 DOI: 10.1038/s41565-023-01354-x] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2022] [Accepted: 02/17/2023] [Indexed: 06/17/2023]
Abstract
Layered materials are taking centre stage in the ever-increasing research effort to develop material platforms for quantum technologies. We are at the dawn of the era of layered quantum materials. Their optical, electronic, magnetic, thermal and mechanical properties make them attractive for most aspects of this global pursuit. Layered materials have already shown potential as scalable components, including quantum light sources, photon detectors and nanoscale sensors, and have enabled research of new phases of matter within the broader field of quantum simulations. In this Review we discuss opportunities and challenges faced by layered materials within the landscape of material platforms for quantum technologies. In particular, we focus on applications that rely on light-matter interfaces.
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Affiliation(s)
- Alejandro R-P Montblanch
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Matteo Barbone
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
- Munich Center for Quantum Science and Technology, (MCQST), Munich, Germany
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, Garching, Germany
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
| | - Mete Atatüre
- Cavendish Laboratory, University of Cambridge, Cambridge, UK.
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK.
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Suzuki H, Liu Y, Misawa M, Nakano C, Wang Y, Nakano R, Ishimura K, Tsuruta K, Hayashi Y. Intermediate State between MoSe 2 and Janus MoSeS during Atomic Substitution Process. NANO LETTERS 2023; 23:4533-4540. [PMID: 37155295 DOI: 10.1021/acs.nanolett.3c00972] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Janus transition metal dichalcogenides (TMDCs), with dissimilar chalcogen atoms on each side of TMDCs, have garnered considerable research attention because of the out-of-plane intrinsic polarization in monolayer TMDCs. Although a plasma process has been proposed for synthesizing Janus TMDCs based on the atomic substitution of surface atoms at room temperature, the formation dynamics and intermediate electronic states have not been completely examined. In this study, we investigated the intermediate state between MoSe2 and Janus MoSeS during plasma processing. Atomic composition analysis and atomic-scale structural observations revealed the intermediate partially substituted Janus (PSJ) structure. Combined with theoretical calculations, we successfully clarified the characteristic Raman modes in the intermediate PSJ structure. The PL exhibited discontinuous transitions that could not be explained by the theoretical calculations. These findings will contribute toward understanding the formation process and electronic-state modulation of Janus TMDCs.
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Affiliation(s)
- Hiroo Suzuki
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Yijun Liu
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Masaaki Misawa
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Chiyu Nakano
- Advanced Science Research Center, Okayama University, Okayama 700-8530, Japan
| | - Yingzhe Wang
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Ryo Nakano
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Kentaro Ishimura
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Kenji Tsuruta
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Yasuhiko Hayashi
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
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9
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Torun E, Paleari F, Milošević MV, Wirtz L, Sevik C. Intrinsic Control of Interlayer Exciton Generation in Van der Waals Materials via Janus Layers. NANO LETTERS 2023; 23:3159-3166. [PMID: 37037187 DOI: 10.1021/acs.nanolett.2c04724] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
We demonstrate the possibility of engineering the optical properties of transition metal dichalcogenide heterobilayers when one of the constitutive layers has a Janus structure. We investigate different MoS2@Janus layer combinations using first-principles methods including excitons and exciton-phonon coupling. The direction of the intrinsic electric field from the Janus layer modifies the electronic band alignments and, consequently, the energy separation between dark interlayer exciton states and bright in-plane excitons. We find that in-plane lattice vibrations strongly couple the two states, so that exciton-phonon scattering may be a viable generation mechanism for interlayer excitons upon light absorption. In particular, in the case of MoS2@WSSe, the energy separation of the low-lying interlayer exciton from the in-plane exciton is resonant with the transverse optical phonon modes (40 meV). We thus identify this heterobilayer as a prime candidate for efficient generation of charge-separated electron-hole pairs.
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Affiliation(s)
- Engin Torun
- Department of Physics and Materials Science, University of Luxembourg, 162a avenue de la Faïencerie, Luxembourg L-1511, Luxembourg
| | | | - Milorad V Milošević
- Department of Physics & NANOlab Center of Excellence, University of Antwerp, Groenenborgerlaan 171, Antwerp B-2020, Belgium
- Instituto de Fisica, Universidade Federal de Mato Grosso, Cuiaba, Mato Grosso 78060-900, Brazil
| | - Ludger Wirtz
- Department of Physics and Materials Science, University of Luxembourg, 162a avenue de la Faïencerie, Luxembourg L-1511, Luxembourg
| | - Cem Sevik
- Department of Physics & NANOlab Center of Excellence, University of Antwerp, Groenenborgerlaan 171, Antwerp B-2020, Belgium
- Department of Mechanical Engineering, Faculty of Engineering, Eskisehir Technical University, Eskisehir 26555, Turkey
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10
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Feuer MG, Montblanch ARP, Sayyad MY, Purser CM, Qin Y, Alexeev EM, Cadore AR, Rosa BLT, Kerfoot J, Mostaani E, Kalȩba R, Kolari P, Kopaczek J, Watanabe K, Taniguchi T, Ferrari AC, Kara DM, Tongay S, Atatüre M. Identification of Exciton Complexes in Charge-Tunable Janus W SeS Monolayers. ACS NANO 2023; 17:7326-7334. [PMID: 37058341 PMCID: PMC10134503 DOI: 10.1021/acsnano.2c10697] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2022] [Accepted: 03/29/2023] [Indexed: 06/17/2023]
Abstract
Janus transition-metal dichalcogenide monolayers are artificial materials, where one plane of chalcogen atoms is replaced by chalcogen atoms of a different type. Theory predicts an in-built out-of-plane electric field, giving rise to long-lived, dipolar excitons, while preserving direct-bandgap optical transitions in a uniform potential landscape. Previous Janus studies had broad photoluminescence (>18 meV) spectra obfuscating their specific excitonic origin. Here, we identify the neutral and the negatively charged inter- and intravalley exciton transitions in Janus WSeS monolayers with ∼6 meV optical line widths. We integrate Janus monolayers into vertical heterostructures, allowing doping control. Magneto-optic measurements indicate that monolayer WSeS has a direct bandgap at the K points. Our results pave the way for applications such as nanoscale sensing, which relies on resolving excitonic energy shifts, and the development of Janus-based optoelectronic devices, which requires charge-state control and integration into vertical heterostructures.
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Affiliation(s)
- Matthew
S. G. Feuer
- Cavendish
Laboratory, University of Cambridge, 19 J. J. Thomson Avenue, Cambridge, CB3 0HE, U.K.
| | | | - Mohammed Y. Sayyad
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Carola M. Purser
- Cavendish
Laboratory, University of Cambridge, 19 J. J. Thomson Avenue, Cambridge, CB3 0HE, U.K.
- Cambridge
Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, U.K.
| | - Ying Qin
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Evgeny M. Alexeev
- Cavendish
Laboratory, University of Cambridge, 19 J. J. Thomson Avenue, Cambridge, CB3 0HE, U.K.
- Cambridge
Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, U.K.
| | - Alisson R. Cadore
- Cambridge
Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, U.K.
| | - Barbara L. T. Rosa
- Cambridge
Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, U.K.
| | - James Kerfoot
- Cambridge
Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, U.K.
| | - Elaheh Mostaani
- Cambridge
Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, U.K.
| | - Radosław Kalȩba
- Cavendish
Laboratory, University of Cambridge, 19 J. J. Thomson Avenue, Cambridge, CB3 0HE, U.K.
| | - Pranvera Kolari
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Jan Kopaczek
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Kenji Watanabe
- Research
Center for Functional Materials, National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Andrea C. Ferrari
- Cambridge
Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, U.K.
| | - Dhiren M. Kara
- Cavendish
Laboratory, University of Cambridge, 19 J. J. Thomson Avenue, Cambridge, CB3 0HE, U.K.
| | - Sefaattin Tongay
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Mete Atatüre
- Cavendish
Laboratory, University of Cambridge, 19 J. J. Thomson Avenue, Cambridge, CB3 0HE, U.K.
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11
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Bikerouin M, Chdil O, Balli M. Solar cells based on 2D Janus group-III chalcogenide van der Waals heterostructures. NANOSCALE 2023; 15:7126-7138. [PMID: 37000599 DOI: 10.1039/d2nr06200c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Janus monolayers, realized by breaking the vertical structural symmetry of two-dimensional (2D) materials, pave the way for a new era of high-quality and high-performance atomically-thin vertical p-n heterojunction solar cells. Herein, employing first-principles computations, Janus group-III chalcogenide monolayers, MX, M2XY, MM'X2 and MM'XY (M, M' = Ga, In; X, Y = S, Se, Te), are deeply investigated in view of their implementation in 2D photovoltaic systems. Their stability analysis reveals that the 21 investigated monolayers are energetically, thermodynamically, mechanically, dynamically, and thermally stable, confirming their growth feasibility under ambient conditions. Furthermore, owing to their optimal band gap, high charge carrier mobilities, and strong light absorption, 2D Janus group-III monolayers are predicted as promising candidates for 2D excitonic solar cell applications. In fact, 46 type-II van der Waals (vdW) heterostructures with a lattice mismatch of less than 5% are identified by analyzing the band alignments of the investigated monolayers obtained through the HSE + SOC approach. In particular, 7 vertical vdW heterojunctions with a power conversion efficiency (PCE) higher than 20% are predicted and might be the focus of future experimental and theoretical studies. To further confirm the type II band alignment, the Ga2STe-GaInS2 vdW heterostructure, which reveals the highest PCE of 23.69%, is thoroughly investigated. Our results not only predict and evaluate stable 2D Janus group-III chalcogenide monolayers and vdW heterostructures, but also suggest that they could be used as materials for next-generation optoelectronic and photovoltaic devices.
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Affiliation(s)
- M Bikerouin
- AMEEC team, LERMA, College of Engineering and Architecture, International University of Rabat, parc Technopolis, Rocade de Rabat-Salé, 11100, Morocco.
| | - O Chdil
- AMEEC team, LERMA, College of Engineering and Architecture, International University of Rabat, parc Technopolis, Rocade de Rabat-Salé, 11100, Morocco.
| | - M Balli
- AMEEC team, LERMA, College of Engineering and Architecture, International University of Rabat, parc Technopolis, Rocade de Rabat-Salé, 11100, Morocco.
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12
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Xiao Y, Xiong C, Chen MM, Wang S, Fu L, Zhang X. Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications. Chem Soc Rev 2023; 52:1215-1272. [PMID: 36601686 DOI: 10.1039/d1cs01016f] [Citation(s) in RCA: 18] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.
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Affiliation(s)
- Yao Xiao
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Chengyi Xiong
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Miao-Miao Chen
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Shengfu Wang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Lei Fu
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, P. R. China. .,College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Xiuhua Zhang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
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13
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Harris SB, Lin YC, Puretzky AA, Liang L, Dyck O, Berlijn T, Eres G, Rouleau CM, Xiao K, Geohegan DB. Real-Time Diagnostics of 2D Crystal Transformations by Pulsed Laser Deposition: Controlled Synthesis of Janus WSSe Monolayers and Alloys. ACS NANO 2023; 17:2472-2486. [PMID: 36649648 DOI: 10.1021/acsnano.2c09952] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Energetic processing methods such as hyperthermal implantation hold special promise to achieve the precision synthesis of metastable two-dimensional (2D) materials such as Janus monolayers; however, they require precise control. Here, we report a feedback approach to reveal and control the transformation pathways in materials synthesis by pulsed laser deposition (PLD) and apply it to investigate the transformation kinetics of monolayer WS2 crystals into Janus WSSe and WSe2 by implantation of Se clusters with different maximum kinetic energies (<42 eV/Se-atom) generated by laser ablation of a Se target. Real-time Raman spectroscopy and photoluminescence are used to assess the structure, composition, and optoelectronic quality of the monolayer crystal as it is implanted with well-controlled fluxes of selenium for different kinetic energies that are regulated with in situ ICCD imaging, ion probe, and spectroscopy diagnostics. First-principles calculations, XPS, and atomic-resolution HAADF STEM imaging are used to understand the intermediate alloy compositions and their vibrational modes to identify transformation pathways. The real-time kinetics measurements reveal highly selective top-layer conversion as WS2 transforms through WS2(1-x)Se2x alloys to WSe2 and provide the means to adjust processing conditions to achieve fractional and complete Janus WSSe monolayers as metastable transition states. The general approach demonstrates a real-time feedback method to achieve Janus layers or other metastable alloys of the desired composition, and a general means to adjust the structure and quality of materials grown by PLD, addressing priority research directions for precision synthesis with real-time adaptive control.
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Affiliation(s)
- Sumner B Harris
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Yu-Chuan Lin
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania16802, United States
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Ondrej Dyck
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Tom Berlijn
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Gyula Eres
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Christopher M Rouleau
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - David B Geohegan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
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14
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Özcan S, Biel B. Exploring a novel class of Janus MXenes by first principles calculations: structural, electronic and magnetic properties of Sc 2CXT, X = O, F, OH; T = C, S, N. Phys Chem Chem Phys 2023; 25:1881-1888. [PMID: 36541438 DOI: 10.1039/d2cp04713f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
The already intriguing electronic and optical properties of the MXene Sc2C family can be further tuned through a wide range of possible functionalizations. Here, by means of density functional theory, we show that the 36 possible elements of the Janus MXT (M: Sc2C, X: O, F, OH, T: C, N, S) family, built by considering the four possible structural models (i) FCC, (ii) HCP, (iii) FCC + HCP, and (iv) HCP + FCC, are all potentially stable. The analysis of their mechanical properties shows the excellent mechanical flexibility of functionalized MXenes (f-MXenes) under large strain, making them more suitable for applications where stress could be an issue. Interestingly, while Sc2C presents a metallic character, Sc2COS, Sc2CFN and Sc2COHN are found to be semiconductors with bandgaps of 2.5 eV (indirect), 1.67 eV (indirect) and 1.1 eV (direct), respectively, which presents promising applications for nano- and optoelectronics. Moreover, Sc2CFC presents a ferromagnetic ground state with the 2 × 2 × 1 supercell magnetic moment of 3.99 μB, while the ground state of Sc2COHC might be antiferromagnetic with a magnetic moment of 3.98 μB, depending on the environment. Remarkably, the band structures of Sc2CFC and Sc2COHC present a half-metallic character with an HSE06 fundamental band gap of 0.60 eV and 0.48 eV, respectively. Our results confirm the extraordinary potential of the Janus MXT (M: Sc2C, X: O, F, OH, T: C, N, S) family for novel applications in 2D nano-,opto- and spintronics.
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Affiliation(s)
- S Özcan
- Department of Physics, Aksaray University, 68100 Aksaray, Turkey.
| | - B Biel
- Department of Atomic, Molecular and Nuclear Physics & Instituto Carlos I de Física Teórica y Computacional, Faculty of Science, Campus de Fuente Nueva, University of Granada, 18071 Granada, Spain
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15
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Sukhanova EV, Sagatov NE, Oreshonkov AS, Gavryushkin PN, Popov ZI. Halogen-Doped Chevrel Phase Janus Monolayers for Photocatalytic Water Splitting. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:368. [PMID: 36678120 PMCID: PMC9860981 DOI: 10.3390/nano13020368] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/30/2022] [Revised: 01/10/2023] [Accepted: 01/11/2023] [Indexed: 06/17/2023]
Abstract
Chevrel non-van der Waals crystals are promising candidates for the fabrication of novel 2D materials due to their versatile crystal structure formed by covalently bonded (Mo6X8) clusters (X-chalcogen atom). Here, we present a comprehensive theoretical study of the stability and properties of Mo-based Janus 2D structures with Chevrel structures consisting of chalcogen and halogen atoms via density functional theory calculations. Based on the analysis performed, we determined that the S2Mo3I2 monolayer is the most promising structure for overall photocatalytic water-splitting application due to its appropriate band alignment and its ability to absorb visible light. The modulated Raman spectra for the representative structures can serve as a blueprint for future experimental verification of the proposed structures.
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Affiliation(s)
- Ekaterina V. Sukhanova
- Laboratory of Acoustic Microscopy, Emanuel Institute of Biochemical Physics of Russian Academy of Sciences, 119334 Moscow, Russia
| | - Nursultan E. Sagatov
- Laboratory of Phase Transformations and State Diagrams of the Earth’s Matter at High Pressures, Sobolev Institute of Geology and Mineralogy, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia
| | - Aleksandr S. Oreshonkov
- Laboratory of Acoustic Microscopy, Emanuel Institute of Biochemical Physics of Russian Academy of Sciences, 119334 Moscow, Russia
- Laboratory of Molecular Spectroscopy, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
- School of Engineering and Construction, Siberian Federal University, 660041 Krasnoyarsk, Russia
| | - Pavel N. Gavryushkin
- Laboratory of Acoustic Microscopy, Emanuel Institute of Biochemical Physics of Russian Academy of Sciences, 119334 Moscow, Russia
- Laboratory of Phase Transformations and State Diagrams of the Earth’s Matter at High Pressures, Sobolev Institute of Geology and Mineralogy, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia
- Geology Geophysics Department, Novosibirsk State University, 630090 Novosibirsk, Russia
| | - Zakhar I. Popov
- Laboratory of Acoustic Microscopy, Emanuel Institute of Biochemical Physics of Russian Academy of Sciences, 119334 Moscow, Russia
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16
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Gan Z, Paradisanos I, Estrada-Real A, Picker J, Najafidehaghani E, Davies F, Neumann C, Robert C, Wiecha P, Watanabe K, Taniguchi T, Marie X, Biskupek J, Mundszinger M, Leiter R, Kaiser U, Krasheninnikov AV, Urbaszek B, George A, Turchanin A. Chemical Vapor Deposition of High-Optical-Quality Large-Area Monolayer Janus Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2205226. [PMID: 35906951 DOI: 10.1002/adma.202205226] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2022] [Indexed: 06/15/2023]
Abstract
One-pot chemical vapor deposition (CVD) growth of large-area Janus SeMoS monolayers is reported, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these 2D semiconductor monolayers takes place upon the thermodynamic-equilibrium-driven exchange of the bottom Se atoms of the initially grown MoSe2 single crystals on gold foils with S atoms. The growth process is characterized by complementary experimental techniques including Raman and X-ray photoelectron spectroscopy, transmission electron microscopy, and the growth mechanisms are rationalized by first principle calculations. The remarkably high optical quality of the synthesized Janus monolayers is demonstrated by optical and magneto-optical measurements which reveal the strong exciton-phonon coupling and enable an exciton g-factor of -3.3.
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Affiliation(s)
- Ziyang Gan
- Institute of Physical Chemistry, Friedrich Schiller University Jena, 07743, Jena, Germany
| | | | - Ana Estrada-Real
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, Toulouse, 31077, France
| | - Julian Picker
- Institute of Physical Chemistry, Friedrich Schiller University Jena, 07743, Jena, Germany
| | - Emad Najafidehaghani
- Institute of Physical Chemistry, Friedrich Schiller University Jena, 07743, Jena, Germany
| | - Francis Davies
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Centre Dresden-Rossendorf, 01328, Dresden, Germany
| | - Christof Neumann
- Institute of Physical Chemistry, Friedrich Schiller University Jena, 07743, Jena, Germany
| | - Cedric Robert
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, Toulouse, 31077, France
| | - Peter Wiecha
- LAAS-CNRS, Université de Toulouse, Toulouse, 31400, France
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Xavier Marie
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, Toulouse, 31077, France
| | - Johannes Biskupek
- Central Facility of Electron Microscopy, Electron Microscopy Group of Material Science, University of Ulm, D-89081, Ulm, Germany
| | - Manuel Mundszinger
- Central Facility of Electron Microscopy, Electron Microscopy Group of Material Science, University of Ulm, D-89081, Ulm, Germany
| | - Robert Leiter
- Central Facility of Electron Microscopy, Electron Microscopy Group of Material Science, University of Ulm, D-89081, Ulm, Germany
| | - Ute Kaiser
- Central Facility of Electron Microscopy, Electron Microscopy Group of Material Science, University of Ulm, D-89081, Ulm, Germany
| | - Arkady V Krasheninnikov
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Centre Dresden-Rossendorf, 01328, Dresden, Germany
- Department of Applied Physics, Aalto University, Aalto, 00076, Finland
| | - Bernhard Urbaszek
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, Toulouse, 31077, France
- Department of Physics, Technische Universität Darmstadt, 64289, Darmstadt, Germany
| | - Antony George
- Institute of Physical Chemistry, Friedrich Schiller University Jena, 07743, Jena, Germany
- Abbe Center of Photonics, 07745, Jena, Germany
| | - Andrey Turchanin
- Institute of Physical Chemistry, Friedrich Schiller University Jena, 07743, Jena, Germany
- Abbe Center of Photonics, 07745, Jena, Germany
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