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Wang L, Zhou X, Su M, Zhang Y, Li R, Zhang R, Wu X, Wu Z, Wong WPD, Xu QH, He Q, Loh KP. In-Plane Ferrielectric Order in van der Waals β'-In 2Se 3. ACS NANO 2024; 18:809-818. [PMID: 38108268 DOI: 10.1021/acsnano.3c09250] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/19/2023]
Abstract
van der Waals ferroic materials exhibit rich potential for implementing future generation functional devices. Among these, layered β'-In2Se3 has fascinated researchers with its complex superlattice and domain structures. As opposed to ferroelectric α-In2Se3, the understanding of β'-In2Se3 ferroic properties remains unclear because ferroelectric, antiferroelectric, and ferroelastic characteristics have been separately reported in this material. To develop useful applications, it is necessary to understand the microscopic structural properties and their correlation with macroscopic device characteristics. Herein, using scanning transmission electron microscopy (STEM), we observed that the arrangement of dipoles deviates from the ideal double antiparallel antiferroelectric character due to competition between antiferroelectric and ferroelectric structural ordering. By virtue of second-harmonic generation, four-dimensional STEM, and in-plane piezoresponse force microscopy, the long-range inversion-breaking symmetry, uncompensated local polarization, and net polarization domains are unambiguously verified, revealing β'-In2Se3 as an in-plane ferrielectric layered material. Additionally, our device study reveals analogous resistive switching behaviors of different types owing to polarization switching, defect migration, and defect-induced charge trapping/detrapping processes.
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Affiliation(s)
- Lin Wang
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Xin Zhou
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Mengyao Su
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117574, Singapore
| | - Yishu Zhang
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Runlai Li
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Rongrong Zhang
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Xiao Wu
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Zhenyue Wu
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Walter P D Wong
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Qing-Hua Xu
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Qian He
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117574, Singapore
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
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Wu J, Ye Y, Jian J, Yao X, Li J, Tang B, Ma H, Wei M, Li W, Lin H, Li L. Reversible Thermally Driven Phase Change of Layered In 2Se 3 for Integrated Photonics. NANO LETTERS 2023. [PMID: 37405904 DOI: 10.1021/acs.nanolett.3c01247] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/07/2023]
Abstract
Two-dimensional In2Se3, an unconventional phase-change material, has drawn considerable attention for polymorphic phase transitions and electronic device applications. However, its reversible thermally driven phase transitions and potential use in photonic devices have yet to be explored. In this study, we observe the thermally driven reversible phase transitions between α and β' phases with the assistance of local strain from surface wrinkles and ripples, as well as reversible phase changes within the β phase family. These transitions lead to changes in the refractive index and other optoelectronic properties with minimal optical loss at telecommunication bands, which are crucial in integrated photonic applications such as postfabrication phase trimming. Additionally, multilayer β'-In2Se3 working as a transparent microheater proves to be a viable option for efficient thermo-optic modulation. This prototype design for layered In2Se3 offers immense potential for integrated photonics and paves the way for multilevel, nonvolatile optical memory applications.
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Affiliation(s)
- Jianghong Wu
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310030, People's Republic of China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, People's Republic of China
| | - Yuting Ye
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310030, People's Republic of China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, People's Republic of China
| | - Jialing Jian
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310030, People's Republic of China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, People's Republic of China
| | - Xiaoping Yao
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310030, People's Republic of China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, People's Republic of China
| | - Junying Li
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Bo Tang
- Institute of Microelectronics, Chinese Academic Society, Beijing 100029, People's Republic of China
| | - Hui Ma
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Maoliang Wei
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Wenbin Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310030, People's Republic of China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, People's Republic of China
| | - Hongtao Lin
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Lan Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310030, People's Republic of China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, People's Republic of China
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Li T, Li Y, Wang Y, Liu Y, Liu Y, Wang Z, Miao R, Han D, Hui Z, Li W. Neuromorphic Photonics Based on Phase Change Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13111756. [PMID: 37299659 DOI: 10.3390/nano13111756] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2023] [Revised: 04/19/2023] [Accepted: 05/19/2023] [Indexed: 06/12/2023]
Abstract
Neuromorphic photonics devices based on phase change materials (PCMs) and silicon photonics technology have emerged as promising solutions for addressing the limitations of traditional spiking neural networks in terms of scalability, response delay, and energy consumption. In this review, we provide a comprehensive analysis of various PCMs used in neuromorphic devices, comparing their optical properties and discussing their applications. We explore materials such as GST (Ge2Sb2Te5), GeTe-Sb2Te3, GSST (Ge2Sb2Se4Te1), Sb2S3/Sb2Se3, Sc0.2Sb2Te3 (SST), and In2Se3, highlighting their advantages and challenges in terms of erasure power consumption, response rate, material lifetime, and on-chip insertion loss. By investigating the integration of different PCMs with silicon-based optoelectronics, this review aims to identify potential breakthroughs in computational performance and scalability of photonic spiking neural networks. Further research and development are essential to optimize these materials and overcome their limitations, paving the way for more efficient and high-performance photonic neuromorphic devices in artificial intelligence and high-performance computing applications.
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Affiliation(s)
- Tiantian Li
- School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China
| | - Yijie Li
- School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China
| | - Yuteng Wang
- College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Yuxin Liu
- School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China
| | - Yumeng Liu
- School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China
| | - Zhan Wang
- School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China
| | - Ruixia Miao
- School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China
| | - Dongdong Han
- School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China
| | - Zhanqiang Hui
- School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China
| | - Wei Li
- Los Alamos National Laboratory, Computer, Computational, and Statistical Sciences Division, Los Alamos, NM 87545, USA
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Chen Z, Sun M, Li H, Huang B, Loh KP. Oscillatory Order-Disorder Transition during Layer-by-Layer Growth of Indium Selenide. NANO LETTERS 2023; 23:1077-1084. [PMID: 36696459 DOI: 10.1021/acs.nanolett.2c04785] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
It is important to understand the polymorph transition and crystal-amorphous phase transition in In2Se3 to tap the potential of this material for resistive memory storage. By monitoring layer-by-layer growth of β-In2Se3 during molecular beam epitaxy (MBE), we are able to identify a cyclical order-disorder transition characterized by a periodic alternation between a glassy-like metastable subunit cell film consisting of n < 5 sublayers (nth layers = the number of subunit cell layers), and a highly crystalline β-In2Se3 at n = 5 layers. The glassy phase shows an odd-even alternation between the indium-cluster layer (n = 1, 3) and an In-Se solid solution (n = 2, 4), which suggests the ability of In and Se atoms to diffuse, aggregate, and intermix. These dynamic natures of In and Se atoms contribute to a defect-driven memory resistive behavior in current-voltage sweeps that is different from the ferroelectric switching of α-In2Se3.
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Affiliation(s)
- Zhi Chen
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology (ICL-2D MOST), Shenzhen University, Shenzhen518060, People's Republic of China
- College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Mingzi Sun
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, People's Republic of China
| | - Haohan Li
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore117543, Singapore
| | - Bolong Huang
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, People's Republic of China
- Research Centre for Carbon-Strategic Catalysis, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, 999077, People's Republic of China
| | - Kian Ping Loh
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology (ICL-2D MOST), Shenzhen University, Shenzhen518060, People's Republic of China
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore117543, Singapore
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR999077, People's Republic of China
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