Asymmetric Molecular Adsorption and Regioselective Bond Cleavage on Chiral PdGa Crystals

Homogenous enantioselective catalysis is nowadays the cornerstone in the manufacturing of enantiopure substances, but its technological implementation suffers from well-known impediments like the lack of endurable catalysts exhibiting long-term stability. The catalytically active intermetallic compound Palladium-Gallium (PdGa), conserving innate bulk chirality on its surfaces, represent a promising system to study asymmetric chemical reactions by heterogeneous catalysis, with prospective relevance for industrial processes. Here, this work investigates the adsorption of 10,10'-dibromo-9,9'-bianthracene (DBBA) on the PdGa:A(1 ¯ 1 ¯ 1 ¯ $\bar{1}\bar{1}\bar{1}$ ) Pd3-terminated surface by means of scanning tunneling microscopy (STM) and spectroscopy (STS). A highly enantioselective adsorption of the molecule evolving into a near 100% enantiomeric excess below room temperature is observed. This exceptionally high enantiomeric excess is attributed to temperature activated conversion of the S to the R chiral conformer. Tip-induced bond cleavage of the R conformer shows a very high regioselectivity of the DBBA debromination. The experimental results are interpreted by density functional theory atomistic simulations. This work extends the knowledge of chirality transfer onto the enantioselective adsorption of non-planar molecules and manifests the ensemble effect of PdGa surfaces resulting in robust regioselective debromination.

2D Lateral Heterojunction Arrays with Tailored Interface Band Bending

Two-dimensional (2D) lateral heterojunction arrays, characterized by well-defined electronic interfaces, hold significant promise for advancing next-generation electronic devices. Despite this potential, the efficient synthesis of high-density lateral heterojunctions with tunable interfacial band alignment remains a challenging. Here, a novel strategy is reported for the fabrication of lateral heterojunction arrays between monolayer Si2 Te2 grown on Sb2 Te3 (ML-Si2 Te2 @Sb2 Te3 ) and one-quintuple-layer Sb2 Te3 grown on monolayer Si2 Te2 (1QL-Sb2 Te3 @ML-Si2 Te2 ) on a p-doped Sb2 Te3 substrate. The site-specific formation of numerous periodically arranged 2D ML-Si2 Te2 @Sb2 Te3 /1QL-Sb2 Te3 @ML-Si2 Te2 lateral heterojunctions is realized solely through three epitaxial growth steps of thick-Sb2 Te3 , ML-Si2 Te2 , and 1QL-Sb2 Te3 films, sequentially. More importantly, the precisely engineering of the interfacial band alignment is realized, by manipulating the substrate's p-doping effect with lateral spatial dependency, on each ML-Si2 Te2 @Sb2 Te3 /1QL-Sb2 Te3 @ML-Si2 Te2 junction. Atomically sharp interfaces of the junctions with continuous lattices are observed by scanning tunneling microscopy. Scanning tunneling spectroscopy measurements directly reveal the tailored type-II band bending at the interface. This reported strategy opens avenues for advancing lateral epitaxy technology, facilitating practical applications of 2D in-plane heterojunctions.

Bosonic excitation spectra of superconductingBi2Sr2CaCu2O8+δandYBa2Cu3O6+xextracted from scanning tunneling spectra

A detailed interpretation of scanning tunneling spectra obtained on unconventional superconductors enables one to gain information on the pairing boson. Decisive for this approach are inelastic tunneling events. Due to the lack of momentum conservation in tunneling from or to the sharp tip, those are enhanced in the geometry of a scanning tunneling microscope compared to planar tunnel junctions. This work extends the method of obtaining the bosonic excitation spectrum by deconvolution from tunneling spectra to nodald-wave superconductors. In particular, scanning tunneling spectra of slightly underdopedBi2Sr2CaCu2O8+δwith aTcof 82 K and optimally dopedYBa2Cu3O6+xwith aTcof 92 K reveal a resonance mode in their bosonic excitation spectrum atΩres≈63 meVandΩres≈61 meVrespectively. In both cases, the overall shape of the bosonic excitation spectrum is indicative of predominant spin scattering with a resonant mode atΩres<2Δand overdamped spin fluctuations for energies larger than 2Δ. To perform the deconvolution of the experimental data, we implemented an efficient iterative algorithm that significantly enhances the reliability of our analysis.

Unidirectional Nano-modulated Binding and Electron Scattering in Epitaxial Borophene

A complex interplay between the crystal structure and the electron behavior within borophene renders this material an intriguing 2D system, with many of its electronic properties still undiscovered. Experimental insight into those properties is additionally hampered by the limited capabilities of the established synthesis methods, which, in turn, inhibits the realization of potential borophene applications. In this multimethod study, photoemission spectroscopies and scanning probe techniques complemented by theoretical calculations have been used to investigate the electronic characteristics of a high-coverage, single-layer borophene on the Ir(111) substrate. Our results show that the binding of borophene to Ir(111) exhibits pronounced one-dimensional modulation and transforms borophene into a nanograting. The scattering of photoelectrons from this structural grating gives rise to the replication of the electronic bands. In addition, the binding modulation is reflected in the chemical reactivity of borophene and gives rise to its inhomogeneous aging effect. Such aging is easily reset by dissolving boron atoms in iridium at high temperature, followed by their reassembly into a fresh atomically thin borophene mesh. Besides proving electron-grating capabilities of the boron monolayer, our data provide comprehensive insight into the electronic properties of epitaxial borophene which is vital for further examination of other boron systems of reduced dimensionality.

Evidence of Nodal Superconductivity in Monolayer 1H-TaS2 with Hidden Order Fluctuations

Unconventional superconductors represent one of the fundamental directions in modern quantum materials research. In particular, nodal superconductors are known to appear naturally in strongly correlated systems, including cuprate superconductors and heavy-fermion systems. Van der Waals materials hosting superconducting states are well known, yet nodal monolayer van der Waals superconductors have remained elusive. Here, using low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS) experiments, it is shown that pristine monolayer 1H-TaS2 realizes a nodal superconducting state. Non-magnetic disorder drives the nodal superconducting state to a conventional gapped s-wave state. Furthermore, many-body excitations emerge close to the gap edge, signalling a potential unconventional pairing mechanism. The results demonstrate the emergence of nodal superconductivity in a van der Waals monolayer, providing a building block for van der Waals heterostructures exploiting unconventional superconducting states.

Twist-Angle-Dependent Electronic Properties of Exfoliated Single Layer MoS2 on Au(111)

Synthetic materials and heterostructures obtained by the controlled stacking of exfoliated monolayers are emerging as attractive functional materials owing to their highly tunable properties. We present a detailed scanning tunneling microscopy and spectroscopy study of single layer MoS2-on-gold heterostructures as a function of the twist angle. We find that their electronic properties are determined by the hybridization of the constituent layers and are modulated at the moiré period. The hybridization depends on the layer alignment, and the modulation amplitude vanishes with increasing twist angle. We explain our observations in terms of a hybridization between the nearest sulfur and gold atoms, which becomes spatially more homogeneous and weaker as the moiré periodicity decreases with increasing twist angle, unveiling the possibility of tunable hybridization of electronic states via twist angle engineering.

First-order quantum phase transition in the hybrid metal-Mott insulator transition metal dichalcogenide 4Hb-TaS2

Coupling together distinct correlated and topologically nontrivial electronic phases of matter can potentially induce novel electronic orders and phase transitions among them. Transition metal dichalcogenide compounds serve as a bedrock for exploration of such hybrid systems. They host a variety of exotic electronic phases, and their Van der Waals nature enables to admix them, either by exfoliation and stacking or by stoichiometric growth, and thereby induce novel correlated complexes. Here, we investigate the compound 4Hb-TaS2 that interleaves the Mott-insulating state of 1T-TaS2 and the putative spin liquid it hosts together with the metallic state of 2H-TaS2 and the low-temperature superconducting phase it harbors using scanning tunneling spectroscopy. We reveal a thermodynamic phase diagram that hosts a first-order quantum phase transition between a correlated Kondo-like cluster state and a depleted flat band state. We demonstrate that this intrinsic transition can be induced by an electric field and temperature as well as by manipulation of the interlayer coupling with the probe tip, hence allowing to reversibly toggle between the Kondo-like cluster and the depleted flat band states. The phase transition is manifested by a discontinuous change of the complete electronic spectrum accompanied by hysteresis and low-frequency noise. We find that the shape of the transition line in the phase diagram is determined by the local compressibility and the entropy of the two electronic states. Our findings set such heterogeneous structures as an exciting platform for systematic investigation and manipulation of Mott-metal transitions and strongly correlated phases and quantum phase transitions therein.

Application of Scanning Tunneling Microscopy and Spectroscopy in the Studies of Colloidal Quantum Qots

Colloidal quantum dots display remarkable optical and electrical characteristics with the potential for extensive applications in contemporary nanotechnology. As an ideal instrument for examining surface topography and local density of states (LDOS) at an atomic scale, scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) has become indispensable approaches to gain better understanding of their physical properties. This article presents a comprehensive review of the research advancements in measuring the electronic orbits and corresponding energy levels of colloidal quantum dots in various systems using STM and STS. The first three sections introduce the basic principles of colloidal quantum dots synthesis and the fundamental methodology of STM research on quantum dots. The fourth section explores the latest progress in the application of STM for colloidal quantum dot studies. Finally, a summary and prospective is presented.

Sub-5 nm Contacts and Induced p-n Junction Formation in Individual Atomically Precise Graphene Nanoribbons

This paper demonstrates the fabrication of nanometer-scale metal contacts on individual graphene nanoribbons (GNRs) and the use of these contacts to control the electronic character of the GNRs. We demonstrate the use of a low-voltage direct-write STM-based process to pattern sub-5 nm metallic hafnium diboride (HfB2) contacts directly on top of single GNRs in an ultrahigh-vacuum scanning tunneling microscope (UHV-STM), with all the fabrication performed on a technologically relevant semiconductor silicon substrate. Scanning tunneling spectroscopy (STS) data not only verify the expected metallic and semiconducting character of the contacts and GNR, respectively, but also show induced band bending and p-n junction formation in the GNR due to the metal-GNR work function difference. Contact engineering with different work function metals obviates the need to create GNRs with different characteristics by complex chemical doping. This is a demonstration of the successful fabrication of precise metal contacts and local p-n junction formation on single GNRs.

Realization of black phosphorus-like PbSe monolayer on Au(111) via epitaxial growth

Lead selenide (PbSe) has been attracted a lot attention in fundamental research and industrial applications due to its excellent infrared optical and thermoelectric properties, toward reaching the two-dimensional limit. Herein, we realize the black phosphorus-like PbSe (α-phase PbSe) monolayer on Au(111) via epitaxial growth, where a characteristic rectangular superlattice of 5 Å × 9 Å corresponding to 1 × 2 reconstruction with respect to the pristine ofα-phase PbSe is observed by scanning tunneling microscopy. Corresponding density functional theory calculation confirmed the reconstruction and revealed the driven mechanism, the coupling between monolayer PbSe and Au(111) substrate. The metallic feature of differential conductance spectra as well as the transition of the density of states from semiconductor to metal further verified such coupling. As the unique anisotropic structure, our study provides a pathway towards the synthesis of BP-PbSe monolayer. In addition, it builds up an ideal platform for studying fundamental physics and also excellent prospects in PbSe-based device applications.

Real-Space Imaging of Several Molecular Layers of C60in the Rotational Glass Phase

C₆₀is a model system to study molecule-surface interactions and phase transitions due to its high symmetry and strong covalent π bonding within the molecule versus weak van-der-Waals coupling between neighboring molecules. In the solid, at room temperature, the molecule rotates and behaves as a sphere. However, the pentagonal and hexagonal atomic arrangement imposes deviations from the spherical symmetry that become important at low temperatures. The orientation of the C₆₀can be viewed to represent classic spins. For geometrical reasons the preferred orientation of neighboring C₆₀cannot be satisfied for all of the neighboring molecules, making C₆₀a model for disordered spin systems with frustration. We study several molecular&#xD;layers of C<sub>60</sub islands on highly oriented pyrolytic graphite (HOPG) using scanning tunneling microscopy at liquid nitrogen temperatures. By imaging several layers we obtain a limited access to the three-dimensional rotational structure of the molecules in&#xD;an island. We find one rotationally disordered layer between two partially rotationally ordered layers with hexagonal patterns. This exotic pattern shows an example of the local distribution of order and disorder in geometrically frustrated systems. Scanning&#xD;Tunneling Spectroscopy data confirms the weak interactions of neighboring molecules.

Measuring Band Modulation of MoS2 with Ferroelectric Gates

Electronic properties of two-dimensional (2D) materials can be significantly tuned by an external electric field. Ferroelectric gates can provide a strong polarization electric field. Here, we report the measurements of the band structure of few-layer MoS₂ modulated by a ferroelectric P(VDF-TrFE) gate with contact-mode scanning tunneling spectroscopy. When P(VDF-TrFE) is fully polarized, an electric field up to ∼0.62 V/nm through the MoS₂ layers is inferred from the measured band edges, which affects the band structure significantly. First, strong band bending in the vertical direction signifies the Franz-Keldysh effect and a large extension of the optical absorption edge. Photons with energy of half the band gap are still absorbed with 20% of the absorption probability of photons at the band gap. Second, the electric field greatly enlarges the energy separations between the quantum-well subbands. Our study intuitively demonstrates the great potential of ferroelectric gates in band structure manipulation of 2D materials.

Emergence of metallic surface states and negative differential conductance in thinβ-FeSi2films on Si(001)

The electronic properties of the surface ofβ-FeSi₂have been debated for a long. We studied the surface states ofβ-FeSi₂films grown on Si(001) substrates using scanning tunnelling microscopy (STM) and spectroscopy (STS), with the aid of density functional theory calculations. STM simulations using the surface model proposed by Romanyuket al(2014Phys. Rev.B90155305) reproduce the detailed features of experimental STM images. The result of STS showed metallic surface states in accordance with theoretical predictions. The Fermi level was pinned by a surface state that appeared in the bulk band gap of theβ-FeSi₂film, irrespective of the polarity of the substrate. We also observed negative differential conductance at ∼0.45 eV above the Fermi level in STS measurements performed at 4.5 K, reflecting the presence of an energy gap in the unoccupied surface states ofβ-FeSi₂.

Oscillatory Order-Disorder Transition during Layer-by-Layer Growth of Indium Selenide

It is important to understand the polymorph transition and crystal-amorphous phase transition in In₂Se₃ to tap the potential of this material for resistive memory storage. By monitoring layer-by-layer growth of β-In₂Se₃ during molecular beam epitaxy (MBE), we are able to identify a cyclical order-disorder transition characterized by a periodic alternation between a glassy-like metastable subunit cell film consisting of n < 5 sublayers (nth layers = the number of subunit cell layers), and a highly crystalline β-In₂Se₃ at n = 5 layers. The glassy phase shows an odd-even alternation between the indium-cluster layer (n = 1, 3) and an In-Se solid solution (n = 2, 4), which suggests the ability of In and Se atoms to diffuse, aggregate, and intermix. These dynamic natures of In and Se atoms contribute to a defect-driven memory resistive behavior in current-voltage sweeps that is different from the ferroelectric switching of α-In₂Se₃.

Anisotropic Gap Structure and Sign Reversal Symmetry in Monolayer Fe(Se,Te)

The iron-based superconductors are an ideal platform to reveal the enigma of the unconventional superconductivity and potential topological superconductivity. Among them, the monolayer Fe(Se,Te)/SrTiO₃(001), which is proposed to be topological nontrivial, shows interface-enhanced high-temperature superconductivity in the two-dimensional limit. However, the experimental studies on the superconducting pairing mechanism of monolayer Fe(Se,Te) films are still limited. Here, by measuring the quasiparticle interference in monolayer Fe(Se,Te)/SrTiO₃(001), we report the observation of the anisotropic structure of the large superconducting gap and the sign change of the superconducting gap on different electron pockets. The results are well consistent with the "bonding-antibonding" s_±-wave pairing symmetry driven by spin fluctuations in conjunction with spin-orbit coupling. Our work is of basic significance not only for a unified superconducting formalism in the iron-based superconductors, but also for understanding of topological superconductivity in high-temperature superconductors.

Improving the deconvolution of spectra at finite temperatures by replacing spectrum with a neural network

In condensed matter physics studies, spectral information plays an important role in understanding the composition of materials. However, it is difficult to obtain a material's spectrum information directly through experiments or simulations. For example, the spectral information deconvoluted by scanning tunneling spectroscopy suffers from the temperature broadening effect, which is a known ill-posed problem and makes the deconvolution results unstable. Existing methods, such as the maximum entropy method, tend to select an appropriate regularization to suppress unstable oscillations. However, the choice of regularization is difficult, and oscillations are not completely eliminated. We believe that the possible improvement direction is to pay different attention to different intervals. Combining stochastic optimization and deep learning, in this paper, we introduce a neural network-based strategy to solve the deconvolution problem. Because the neural network can represent any nonuniform piecewise linear function, our method replaces the target spectrum with a neural network and can find a better approximation solution through an accurate and efficient optimization. Experiments on theoretical datasets using superconductors demonstrate that the superconducting gap is more accurately estimated and oscillates less. Plug in real experimental data, our approach obtains clearer results for material analysis.

Fabrication and Imaging Monatomic Ni Kagome Lattice on Superconducting Pb(111)

Artificial fabrication of a monolayer Kagome material can offer a promising opportunity to explore exceptional quantum states and phenomena in low dimensionality. Here, we have systematically studied a monatomic Ni Kagome lattice grown on Pb(111) by scanning tunneling microscopy/spectroscopy (STM/STS) and density functional theory (DFT). Sawtooth edge structures with distinct heights due to subsurface Ni atoms have been revealed, leading to asymmetric edge scattering of surface electrons on Pb(111). In addition, a local maximum at about -0.2 eV in tunneling spectra represents a manifestation of characteristic phase-destructive flat bands. Although charge transfer from underlying Pb(111) substrate results in a vanishing magnetic moment of Ni atoms, the proximity-induced superconducting gap is slightly enhanced on the Ni Kagome lattice. In light of single-atomic-layer Ni Kagome lattice on superconducting Pb(111) substrate, it could serve as an ideal platform to investigate the interplay between Kagome physics and superconductivity down to the two-dimensional limit.

Non-Majorana modes in diluted spin chains proximitized to a superconductor

Spin chains proximitized with superconducting condensates have emerged as one of the most promising platforms for the realization of Majorana modes. Here, we craft diluted spin chains atom by atom following a seminal theoretical proposal suggesting indirect coupling mechanisms as a viable route to trigger topological superconductivity. Starting from single adatoms hosting deep Shiba states, we use the highly anisotropic Fermi surface of the substrate to create spin chains characterized by different magnetic configurations along distinct crystallographic directions. By scrutinizing a large set of parameters we reveal the ubiquitous emergence of boundary modes. Although mimicking signatures of Majorana modes, the end modes are identified as topologically trivial Shiba states. Our work demonstrates that zero-energy modes in spin chains proximitized to superconductors are not necessarily a link to Majorana modes while simultaneously identifying other experimental platforms, driving mechanisms, and test protocols for the determination of topologically nontrivial superconducting phases.

Strong Coupling Superconductivity in Ca-Intercalated Bilayer Graphene on SiC

The metal-intercalated bilayer graphene has a flat band with a high density of states near the Fermi energy and thus is anticipated to exhibit an enhanced strong correlation effect and associated fascinating phenomena, including superconductivity. By using a self-developed multifunctional scanning tunneling microscope, we succeeded in observing the superconducting energy gap and diamagnetic response of a Ca-intercalated bilayer graphene below a critical temperature of 8.83 K. The revealed high value of gap ratio, 2Δ/k_BT_c ≈ 5.0, indicates a strong coupling superconductivity, while the variation of penetration depth with temperature and magnetic field indicates an isotropic s-wave superconductor. These results provide crucial experimental clues for understanding the origin and mechanism of superconductivity in carrier-doped graphene.

Tip-Mediated Bandgap Tuning for Monolayer Transition Metal Dichalcogenides

Monolayer transition metal dichalcogenides offer an appropriate platform for developing advanced electronics beyond graphene. Similar to two-dimensional molecular frameworks, the electronic properties of such monolayers can be sensitive to perturbations from the surroundings; the implied tunability of electronic structure is of great interest. Using scanning tunneling microscopy/spectroscopy, we demonstrated a bandgap engineering technique in two monolayer materials, MoS₂ and PtTe₂, with the tunneling current as a control parameter. The bandgap of monolayer MoS₂ decreases logarithmically by the increasing tunneling current, indicating an electric-field-induced gap renormalization effect. Monolayer PtTe₂, by contrast, exhibits a much stronger gap reduction, and a reversible semiconductor-to-metal transition occurs at a moderate tunneling current. This unusual switching behavior of monolayer PtTe₂, not seen in bulk semimetallic PtTe₂, can be attributed to its surface electronic structure that can readily couple to the tunneling tip, as demonstrated by theoretical calculations.

Nearly Ideal Two-Dimensional Electron Gas Hosted by Multiple Quantized Kronig-Penney States Observed in Few-Layer InSe

A theoretical ideal two-dimensional electron gas (2DEG) was characterized by a flat density of states independent of energy. Compared with conventional two-dimensional free-electron systems in semiconductor heterojunctions and noble metal surfaces, we report here the achievement of ideal 2DEG with multiple quantized states in few-layer InSe films. The multiple quantum well states (QWSs) in few-layer InSe films are found, and the number of QWSs is strictly equal to the number of atomic layers. The multiple stair-like DOS as well as multiple bands with parabolic dispersion both characterize ideal 2DEG features in these QWSs. Density functional theory calculations and numerical simulations based on quasi-bounded square potential wells described as the Kronig-Penney model provide a consistent explanation of 2DEG in the QWSs. Our work demonstrates that 2D van der Waals materials are ideal systems for realizing 2DEG hosted by multiple quantized Kronig-Penney states, and the semiconducting nature of the material provides a better chance for construction of high-performance electronic devices utilizing these states, for example, superlattice devices with negative differential resistance.

Morphology Deformation and Giant Electronic Band Modulation in Long-Wavelength WS2 Moiré Superlattices

As a lattice interference effect, moiré superlattices feature a magnification effect that they respond sensitively to both the extrinsic mechanical perturbations and intrinsic atomic reconstructions. Here, using scanning tunneling microscopy and spectroscopy, we observe that long-wavelength WS₂ superlattices are reconstructed into various moiré morphologies, ranging from regular hexagons to heavily deformed ones. We show that a dedicated interplay between the extrinsic nonuniform heterostrain and the intrinsic atomic reconstruction is responsible for this interesting moiré structure evolution. Importantly, the interplay between these two factors also introduces a local inhomogeneous intralayer strain within a moiré. Contrary to the commonly reported electronic modulation that occurred at the valence band edge due to interlayer hybridization, we find that this local intralayer strain induces a strong modulation at K point of the conduction band, reaching up to 300 meV in the heavily deformed moiré. Our microscopic explorations provide valuable information in understanding the intriguing physics in TMD moirés.

Surface Confined Hydrogenation of Graphene Nanoribbons

On-surface synthesis with designer precursor molecules is considered an effective method for preparing graphene nanoribbons (GNRs) of well-defined widths and with tunable electronic properties. Recent reports have shown that the band gap of ribbons doped with heteroatoms (such as boron, nitrogen, and sulfur) remains unchanged in magnitude in most cases. Nevertheless, theory predicts that a tunable band gap may be engineered by hydrogenation, but experimental evidence for this is so far lacking. Herein, surface-confined hydrogenation studies of 7-armchair graphene nanoribbons (7-AGNRs) grown on Au(111) surfaces, in an ultrahigh vacuum environment, are reported. GNRs are first prepared, then hydrogenated by exposure to activated hydrogen atoms. High resolution electron energy loss spectroscopy (HREELS) and scanning tunneling microscopy (STM) images reveal a self-limited hydrogenation process. By means of a combination of bond-resolved scanning tunneling microscopy (BRSTM) imaging and tip-induced site-specific dehydrogenation, the hydrogenation mechanism is studied in detail, and density-functional theory (DFT) calculation methods are used to complement the experimental findings. In all cases, the results demonstrate the successful modification of the electronic properties of the GNR/Au(111) system by edge and basal-plane hydrogenation, and a mechanism for the hydrogenation process is proposed.

Surface Passivation and Detrimental Heat-Induced Diffusion Effects in RbF-Treated Cu(In,Ga)Se2 Solar Cell Absorbers

Alkali postdeposition treatments of Cu(In,Ga)Se2 absorbers with KF, RbF, and CsF have led to remarkable efficiency improvements for chalcopyrite thin film solar cells. However, the effect of such treatments on the electronic properties and defect physics of the chalcopyrite absorber surfaces are not yet fully understood. In this work, we use scanning tunneling spectroscopy and X-ray photoelectron spectroscopy to compare the surface defect electronic properties and chemical composition of RbF-treated and nontreated absorbers. We find that the RbF treatment is effective in passivating electronic defect levels at the surface by preventing surface oxidation. Our X-ray photoelectron spectroscopy (XPS) data points to the presence of chemisorbed Rb on the surface with a bonding configuration similar to that of a RbInSe2 bulk compound. Yet, a quantitative analysis indicates Rb coverage in the submonolayer regime, which is likely causing the surface passivation. Furthermore, ab initio calculations confirm that RbF-treated surfaces are less prone to oxidation (in the form of Ga, In, and Se oxides) than bare chalcopyrite surfaces. In addition, elemental diffusion of Rb along with Na, Cu, and Ga is found to occur when the samples are annealed under ultrahigh vacuum conditions. Magnetic sector secondary ion mass spectrometry measurements indicate that there is a homogeneous spatial distribution of Rb on the surface both before and after annealing, albeit with an increased concentration at the surface after heat treatment. Depth-resolved magnetic sector secondary ion mass spectrometry measurements show that Rb diffusion within the bulk occurs predominantly along grain boundaries. Scanning tunneling and XPS measurements after subsequent annealing steps demonstrate that the Rb accumulation at the surface leads to the formation of metallic Rb phases, involving a significant increase of electronic defect levels and/or surface dipole formation. These results strongly suggest a deterioration of the absorber-window interface because of increased recombination losses after the heat-induced diffusion of Rb toward the interface.

Proximity-Effect-Induced Anisotropic Superconductivity in a Monolayer Ni-Pb Binary Alloy

A proximity effect facilitates the penetration of Cooper pairs that permits superconductivity in a normal metal, offering a promising approach to turn heterogeneous materials into superconductors and develop exceptional quantum phenomena. Here, we have systematically investigated proximity-induced anisotropic superconductivity in a monolayer Ni-Pb binary alloy by combining scanning tunneling microscopy/spectroscopy (STM/STS) with theoretical calculations. By means of high-temperature growth, the ( 3 3 × 3 3 ) R 30 o Ni-Pb surface alloy has been fabricated on Pb(111) and the appearance of a domain boundary as well as a structural phase transition can be deduced from a half-unit-cell lattice displacement. Given the high spatial and energy resolution, tunneling conductance (dI/dU) spectra have resolved the reduced but anisotropic superconducting gap ΔNiPb ≈ 1.0 meV, in stark contrast to the isotropic ΔPb ≈ 1.3 meV. In addition, the higher density of states at the Fermi energy (D(EF)) of the Ni-Pb surface alloy results in an enhancement of coherence peak height. According to the same Tc ≈ 7.1 K with Pb(111) from the temperature-dependent ΔNiPb and the short decay length Ld ≈ 3.55 nm from the spatially monotonic decrease of ΔNiPb, both results are supportive of a proximity-induced superconductivity. Despite a lack of a bulk counterpart, the atomically thick Ni-Pb bimetallic compound opens a pathway to engineer superconducting properties down to the two-dimensional limit, giving rise to the emergence of anisotropic superconductivity via a proximity effect.

Electronic Tuning in WSe2/Au via van der Waals Interface Twisting and Intercalation

The transition metal dichalcogenide (TMD)-metal interfaces constitute an active part of TMD-based electronic devices with optimized performances. Despite their decisive role, current strategies for nanoscale electronic tuning remain limited. Here, we demonstrate electronic tuning in the WSe₂/Au interface by twist engineering, capable of modulating the WSe₂ carrier doping from an intrinsic p-type to n-type. Scanning tunneling microscope/spectroscopy gives direct evidence of enhanced interfacial interaction induced doping in WSe₂ as the twist angle with respect to the topmost (100) lattice of gold changing from 15 to 0°. Taking advantage of the strong coupling interface achieved this way, we have moved a step further to realize an n-p-n-type WSe₂ homojunction. The intrinsic doping of WSe₂ can be recovered by germanium intercalation. Density functional theory calculations confirm that twist angle and intercalation-dependent charge transfer related doping are involved in our observations. Our work offers ways for electronically tuning the metal-2D semiconductor interface.

Oxidation of Supported Nickel Nanoparticles at Low Exposure to O2: Charging Effects and Selective Surface Activity

The oxidation of Ni nanoparticles supported on highly oriented pyrolytic graphite was investigated under conditions of low exposure to oxygen by methods of scanning tunneling microscopy and spectroscopy. It was found that charge transfer effects at the Ni-C interface influenced the surface activity of the nanoparticles. The O₂ dissociation and the Ni oxidation were shown to occur only at the top of the nanoparticle, while the border of the Ni-C interface was the less preferable area for these processes. The O₂ dissociation was inhibited, and atomic oxygen diffusion was suppressed in the given nanosystem, due to the decrease in holes concentration.

Probing borophene oxidation at the atomic scale

Two-dimensional boron (i.e. borophene) holds promise for a variety of emerging nanoelectronic and quantum technologies. Since borophene is synthesized under ultrahigh vacuum (UHV) conditions, it is critical that the chemical stability and structural integrity of borophene in oxidizing environments are understood for practical borophene-based applications. In this work, we assess the mechanism of borophene oxidation upon controlled exposure to air and molecular oxygen in UHV via scanning tunneling microscopy andspectroscopy, x-ray photoelectron spectroscopy, and density functional theory calculations. While borophene catastrophically degrades almost instantaneously upon exposure to air, borophene undergoes considerably more controlled oxidation when exposed to molecular oxygen in UHV. In particular, UHV molecular oxygen dosing results in single-atom covalent modification of the borophene basal plane in addition to disordered borophene edge oxidation that shows altered electronic characteristics. By comparing these experimental observations with density functional theory calculations, further atomistic insight is gained including pathways for molecular oxygen dissociation, surface diffusion, and chemisorption to borophene. Overall, this study provides an atomic-scale perspective of borophene oxidation that will inform ongoing efforts to passivate and utilize borophene in ambient conditions.

Nanometer-Scale Lateral p-n Junctions in Graphene/α-RuCl3 Heterostructures

The ability to create nanometer-scale lateral p-n junctions is essential for the next generation of two-dimensional (2D) devices. Using the charge-transfer heterostructure graphene/α-RuCl₃, we realize nanoscale lateral p-n junctions in the vicinity of graphene nanobubbles. Our multipronged experimental approach incorporates scanning tunneling microscopy (STM) and spectroscopy (STS) and scattering-type scanning near-field optical microscopy (s-SNOM) to simultaneously probe the electronic and optical responses of nanobubble p-n junctions. Our STM/STS results reveal that p-n junctions with a band offset of ∼0.6 eV can be achieved with widths of ∼3 nm, giving rise to electric fields of order 10⁸ V/m. Concurrent s-SNOM measurements validate a point-scatterer formalism for modeling the interaction of surface plasmon polaritons (SPPs) with nanobubbles. Ab initio density functional theory (DFT) calculations corroborate our experimental data and reveal the dependence of charge transfer on layer separation. Our study provides experimental and conceptual foundations for generating p-n nanojunctions in 2D materials.

Rationally Designed Topological Quantum Dots in Bottom-Up Graphene Nanoribbons

Bottom-up graphene nanoribbons (GNRs) have recently been shown to host nontrivial topological phases. Here, we report the fabrication and characterization of deterministic GNR quantum dots whose orbital character is defined by zero-mode states arising from nontrivial topological interfaces. Topological control was achieved through the synthesis and on-surface assembly of three distinct molecular precursors designed to exhibit structurally derived topological electronic states. Using a combination of low-temperature scanning tunneling microscopy and spectroscopy, we have characterized two GNR topological quantum dot arrangements synthesized under ultrahigh vacuum conditions. Our results are supported by density-functional theory and tight-binding calculations, revealing that the magnitude and sign of orbital hopping between topological zero-mode states can be tuned based on the bonding geometry of the interconnecting region. These results demonstrate the utility of topological zero modes as components for designer quantum dots and advanced electronic devices.

Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions

The band alignment, interface states, interface coupling, and carrier transport of semiconductor heterojunctions (SHs) need to be well understood for the design and fabrication of various important semiconductor structures and devices. Scanning tunneling microscopy (STM) with high spatial resolution and scanning tunneling spectroscopy (STS) with high energy resolution are significantly contributing to the understanding on the important properties of SHs. In this work, the recent progress on the use of STM and STS to study lateral, vertical and bulk SHs is reviewed. The spatial structures of SHs with atomically flat surface have been examined with STM. The electronic band structures (e. g., the band offset, interface state, and space charge region) of SHs are measured with STS. Combined with the spatial structures and the tunneling spectra features, the mechanism for the carrier transport in the SH may be proposed.

Electronic Level Structure of Novel Guanine Octuplex DNA Single Molecules

Throughout the past few decades, guanine quadruplex DNA structures have attracted much interest both from a fundamental material science perspective and from a technologically oriented perspective. Novel guanine octuplex DNA, formed from coiled quadruplex DNA, was recently discovered as a stable and rigid DNA-based nanostructure. A detailed electronic structure study of this new nanomaterial, performed by scanning tunneling spectroscopy on a subsingle-molecule level at cryogenic temperature, is presented herein. The electronic levels and lower energy gap of guanine octuplex DNA compared to quadruplex DNA dictate higher transverse conductivity through guanine octads than through guanine tetrads.

Equally Spaced Quantum States in van der Waals Epitaxy-Grown Nanoislands

Pursuing the confinement of linearly dispersive relativistic Fermions is of interest in both fundamental physics and potential applications. Here, we report strong STM evidence for the equally spaced, strikingly sharp, and densely distributed quantum well states (QWSs) near Fermi energy in Pb(111) nanoislands, van der Waals epitaxially grown on graphitized 6H-SiC(0001). The observations can be explained as the quantized energies of confined linearly dispersive [111] electrons, which essentially "simulate" the out-of-plane relativistic quasiparticles. The equally spaced QWSs with an origin of confined relativistic electrons are supported by phenomenological simulations and Fabry-Pérot fittings based on the relativistic Fermions. First-principles calculations further reveal that the spin-orbit coupling strengthens the relativistic nature of electrons near Fermi energy. Our finding uncovers the unique equally spaced quantum states in electronic systems beyond Landau levels and may inspire future studies on confined relativistic quasiparticles in flourishing topological materials and applications in structurally simpler quantum cascade laser.

Visualizing Band Profiles of Gate-Tunable Junctions in MoS2/WSe2 Heterostructure Transistors

Heterostructure devices based on two-dimensional materials have been under intensive study due to their intriguing electrical and optical properties. One key factor in understanding these devices is their nanometer-scale band profiles, which is challenging to obtain in devices. Here, we use a technique named contact-mode scanning tunneling spectroscopy to directly visualize the band profiles of MoS₂/WSe₂ heterostructure devices at different gate voltages with nanometer resolution. The long-held view of a conventional p-n junction in the MoS₂/WSe₂ heterostructure is reexamined. Due to strong inter- and intralayer charge transfer, the MoS₂ layer in contact with WSe₂ is found to convert from n-type to p-type, and a series of gate-tunable p-n and p-p⁺ junctions are developed in the devices. Highly conductive edges are also discovered which could strongly affect the device properties.

Origin of bandgap bowing in Cs2Na1-xAgxBiCl6double perovskite solid-state alloys: a paradigm through scanning tunneling spectroscopy

Bandgap bowing has recently been emerged as an effective strategy toward band-engineering in metal halide perovskites. In this work, we report extensive studies on the bowing phenomenon in Cs₂NaBiCl₆double perovskite upon alloying with silver at the sodium site. Through optical spectroscopy, composition-dependent bandgap in Cs₂Na_1-xAg_xBiCl₆(0 ⩽x⩽ 1) evidenced bandgap bowing with an upward-concave nature. Further from the quadratic fit, the bowing coefficient (b= 0.74 eV) turned out to be independent of composition and is close to the theoretically predicted value. From scanning tunneling spectroscopy and associated studies on band-energies, we have observed that the bandgap-lowering originated from a significant change of the valence-band position. The behavior of band-energies has been explained through the orbital-contributions of the constituent elements responsible in forming the two bands. Formation of an internal type-I band-alignment between the two end-members, namely Cs₂NaBiCl₆and Cs₂AgBiCl₆could be visualized. Based on experimental evidences, we could infer that the bow-like evolution of bandgap in Cs₂Na_1-xAg_xBiCl₆alloys is principally dominated by structural distortions in the Cs₂NaBiCl₆host-lattice upon incorporation of silver.

Single-Electron Tunneling PbS/InP Heterostructure Nanoplatelets for Synaptic Operations

Power consumption, thermal management, and wiring challenge of the binary serial architecture drive the search for alternative paradigms to computing. Of special interest is neuromorphic computing, in which materials and device structures are designed to mimic neuronal functionalities with energy-efficient non-linear responses and both short- and long-term plasticities. In this work, we explore and report on the enabling potential of single-electron tunneling (SET) in PbS nanoplatelets epitaxially grown in the liquid phase on InP, which present these key features. By extrapolating the experimental data in the SET regime, we predict and model synaptic operations. The low-energy (<fJ), high-speed (MHz) operation and scalable fabrication process of the PbS/InP nanoplatelets make such a nanoscale system attractive as neuromorphic computing building blocks.

Revealing the Chemical Bonding in Adatom Arrays via Machine Learning of Hyperspectral Scanning Tunneling Spectroscopy Data

The adatom arrays on surfaces offer an ideal playground to explore the mechanisms of chemical bonding via changes in the local electronic tunneling spectra. While this information is readily available in hyperspectral scanning tunneling spectroscopy data, its analysis has been considerably impeded by a lack of suitable analytical tools. Here we develop a machine learning based workflow combining supervised feature identification in the spatial domain and unsupervised clustering in the energy domain to reveal the details of structure-dependent changes of the electronic structure in adatom arrays on the Co₃Sn₂S₂ cleaved surface. This approach, in combination with first-principles calculations, provides insight for using artificial neural networks to detect adatoms and classifies each based on their local neighborhood comprised of other adatoms. These structurally classified adatoms are further spectrally deconvolved. The unexpected inhomogeneity of electronic structures among adatoms in similar configurations is unveiled using this method, suggesting there is not a single atomic species of adatoms, but rather multiple types of adatoms on the Co₃Sn₂S₂ surface. This is further supported by a slight contrast difference in the images (or slight size variation) of the topography of the adatoms.

Measuring and Tuning the Potential Landscape of Electrostatically Defined Quantum Dots in Graphene

We use Kelvin probe force microscopy (KPFM) to probe the carrier-dependent potential of an electrostatically defined quantum dot (QD) in a graphene/hexagonal boron nitride (hBN) heterostructure. We show that gate-dependent measurements enable a calibration scheme that corrects for uncertainty inherent in typical KPFM measurements and accurately reconstructs the potential well profile. Our measurements reveal how the well changes with carrier concentration, which we associate with the nonlinear dependence of graphene's work function on carrier density. These changes shift the energy levels of quasi-bound states in the QD which we can measure via scanning tunneling spectroscopy (STS). We show that the experimentally extracted energy levels closely compare with wave functions calculated from the reconstructed KPFM data. This methodology, where KPFM and STS data are simultaneously acquired from 2D materials, allows the quasiparticle response to an electrostatic potential to be determined in a self-consistent way.

Resolving Site-Specific Energy Levels of Small-Molecule Donor-Acceptor Heterostructures Close to Metal Contacts

The active material of optoelectronic devices must accommodate for contacts which serve to collect or inject the charge carriers. It is the purpose of this work to find out to which extent properties of organic optoelectronic layers change close to metal contacts compared to known properties of bulk materials. Bottom-up fabrication capabilities of model interfaces under ultrahigh vacuum and single-atom low temperature (LT)-STM spectroscopy with density functional theory (DFT) calculations are used to detect the spatial modifications of electronic states such as frontier-orbitals at interfaces. The system under consideration is made of a silver substrate covered with a blend of C₆₀ and ZnPc molecules of a few monolayers. When C₆₀ and ZnPc are separately adsorbed on Ag(111), they show distinct spectroscopic features in STM. However, when C₆₀ is added to the ZnPc monolayer, it shows scanning tunneling spectra similar to ZnPc, revealing a strong interaction of C₆₀ with the ZnPc induced by the substrate. DFT calculations on a model complex confirm the strong hybridization of C₆₀ with ZnPc layer upon adsorption on Ag(111), thus highlighting the role of boundary layers where the donor-acceptor character is strongly perturbed. The calculation also reveals a significant charge transfer from the Ag to the complex that is likely responsible for a downward shift of the molecular LUMO in agreement with the experiment.

Reverse bandgap-bowing in nickel-cadmium sulfide alloys (Ni1-xCdxS) and its origin

We present evolution of band energies in α-NiS when alloyed with a cationic doping through isovalent cadmium (Cd²⁺). Optical bandgap of nickel-cadmium sulfide (Ni_1-xCd_xS) alloys, as a deviation from the linear relationship or Vegard's law, have exhibited a reverse bandgap-bowing in the form of downward-concave dependence. Such a phenomenon, which manifests as a negative value of bowing coefficient (b), is uncommon in chalcogenide alloys. In this work, we have deliberated on the origin of reverse bandgap-bowing in nickel-cadmium alloys and identified the band responsible for the bowing phenomenon. While thin-films of the alloys were formed through successive ionic layer adsorption and reaction method, tunnel conductance and thereby density of states of the materials were derived from scanning tunneling spectroscopy. The spectroscopy provided the variation of conduction and valence band-edges (CB and VB, respectively) with respect to the cadmium-content in Ni_1-xCd_xS. The CB-edge of the alloys could be seen to remain mostly unaffected with increasing cadmium-content, since the band is composed of only the S 2porbitals; the VB-energy, on the other hand, which forms due to an effective coupling between the metaldand the anionporbitals, could be seen to be affected due to ap-drepulsion. Based on our experimental findings, we inferred that an antagonism between volume deformation and structural relaxation had resulted in the reverse bandgap-bowing in Ni_1-xCd_xS alloys.

Self-Assembled Borophene/Graphene Nanoribbon Mixed-Dimensional Heterostructures

Atomically thin metal-semiconductor heterojunctions are highly desirable for nanoelectronic applications. However, coherent lateral stitching of distinct two-dimensional (2D) materials has traditionally required interfacial lattice matching and compatible growth conditions, which remains challenging for most systems. On the other hand, these constraints are relaxed in 2D/1D mixed-dimensional lateral heterostructures due to the increased structural degree of freedom. Here, we report the self-assembly of mixed-dimensional lateral heterostructures consisting of 2D metallic borophene and 1D semiconducting armchair-oriented graphene nanoribbons (aGNRs). With the sequential ultrahigh vacuum deposition of boron and 4,4″-dibromo-p-terphenyl as precursors on Ag(111) substrates, an on-surface polymerization process is systematically studied and refined including the transition from monomers to organometallic intermediates and finally demetallization that results in borophene/aGNR lateral heterostructures. High-resolution scanning tunneling microscopy and spectroscopy resolve the structurally and electronically abrupt interfaces in borophene/aGNR heterojunctions, thus providing insight that will inform ongoing efforts in pursuit of atomically precise nanoelectronics.

Two-dimensional germanium islands with Dirac signature on Ag2Ge surface alloy

Two-dimensional (2D) Dirac materials have attracted intense research efforts due to their promise for applications ranging from field-effect transistors and low-power electronics to fault-tolerant quantum computation. One key challenge is to fabricate 2D Dirac materials hosting Dirac electrons. Here, monolayer germanene is successfully fabricated on a Ag₂Ge surface alloy. Scanning tunneling spectroscopy measurements revealed a linear energy dispersion relation. The latter was supported by density functional theory calculations. These results demonstrate that monolayer germanene can be realistically fabricated on a Ag₂Ge surface alloy. The finding opens the door to exploration and study of 2D Dirac material physics and device applications.

Multiple magnetic states of CoPc molecule on a two-dimensional layer of NbSe2

Molecular spintronics hinges on the detailed understanding of electronic and magnetic properties of molecules interfaced with various materials. Here we demonstrate withab initiosimulations that the prototypical Co-phthalocyanine (CoPc) molecule can surprisingly develop multi-spin states once deposited on the two-dimensional 2H-NbSe₂layer. Conventional calculations based on density functional theory (DFT) show the existence of low, regular and high spin states, which reduce to regular and high spins states once correlations are incorporated with a DFT +Uapproach. Depending onU, the ground state is either the low spin or high spin state with energy differences affected by the molecular orientation on top of the substrate. Our results are compared to recent scanning probe measurements and motivate further theoretical and experimental studies on the unveiled rich multi-magnetic behavior of CoPc molecule.

High Tunneling Magnetoresistance in Magnetic Tunnel Junctions with Subnanometer Thick Al2O3 Tunnel Barriers Fabricated Using Atomic Layer Deposition

Pinhole-free and defect-free ultrathin dielectric tunnel barriers (TBs) are a key to obtaining high-tunneling magnetoresistance (TMR) and efficient switching in magnetic tunnel junctions (MTJs). Among others, atomic layer deposition (ALD) provides a unique approach for the fabrication of ultrathin TBs with several advantages including atomic-scale control over the TB thickness, conformal coating, and a low defect density. Motivated by this, this work explores the fabrication and characterization of spin-valve Fe/ALD-Al₂O₃/Fe MTJs with an ALD-Al₂O₃ TB thickness of 0.55 nm using in situ ALD. Remarkably, high TMR values of ∼77 and ∼90% have been obtained, respectively, at room temperature and at 100 K, which are comparable to the best reported values on MTJs having thermal AlO_x TBs with optimized device structures. In situ scanning tunneling spectroscopy characterization of the ALD-Al₂O₃ TBs has revealed a higher TB height (E_b) of 1.33 ± 0.06 eV, in contrast to E_b ∼ 0.3-0.6 eV for their AlO_x TB counterparts, indicative of significantly lower defect concentrations in the former. This first success of the MTJs with subnanometer thick ALD-Al₂O₃ TBs demonstrates the feasibility of in situ ALD for the fabrication of pinhole-free and low-defect ultrathin TBs for practical applications, and the performance could be further improved through device optimization.

Promoting a Weak Coupling of Monolayer MoSe2 Grown on (100)-Faceted Au Foil

As a two-dimensional semiconductor with many physical properties, including, notably, layer-controlled electronic bandgap and coupled spin-valley degree of freedom, monolayer MoSe₂ is a strong candidate material for next-generation opto- and valley-electronic devices. However, due to substrate effects such as lattice mismatch and dielectric screening, preserving the monolayer's intrinsic properties remains challenging. This issue is generally significant for metallic substrates whose active surfaces are commonly utilized to achieve direct chemical or physical vapor growth of the monolayer films. Here, we demonstrate high-temperature-annealed Au foil with well-defined (100) facets as a weakly interacting substrate for atmospheric pressure chemical vapor deposition of highly crystalline monolayer MoSe₂. Low-temperature scanning tunneling microscopy/spectroscopy measurements reveal a honeycomb structure of MoSe₂ with a quasi-particle bandgap of 1.96 eV, a value comparable with other weakly interacting systems such as MoSe₂/graphite. Density functional theory calculations indicate that the Au(100) surface exhibits the preferred energetics to electronically decouple from MoSe₂, compared with the (110) and (111) crystal planes. This weak coupling is critical for the easy transfer of monolayers to another host substrate. Our study demonstrates a practical means to produce high-quality monolayers of transition-metal dichalcogenides, viable for both fundamental and application studies.

Van Hove Singularities and Trap States in Two-Dimensional CdSe Nanoplatelets

Semiconductor nanoplatelets, which offer a compelling combination of the flatness of two-dimensional semiconductors and the inherent richness brought about by colloidal nanostructure synthesis, form an ideal and general testbed to investigate fundamental physical effects related to the dimensionality of semiconductors. With low temperature scanning tunnelling spectroscopy and tight binding calculations, we investigate the conduction band density of states of individual CdSe nanoplatelets. We find an occurrence of peaks instead of the typical steplike function associated with a quantum well, that rule out a free in-plane electron motion, in agreement with the theoretical density of states. This finding, along with the detection of deep trap states located on the edge facets, which also restrict the electron motion, provides a detailed picture of the actual lateral confinement in quantum wells with finite length and width.

Identifying Defect-Induced Trion in Monolayer WS2 via Carrier Screening Engineering

Unusually high exciton binding energies (BEs), as much as ∼1 eV in monolayer transition-metal dichalcogenides, provide opportunities for exploring exotic and stable excitonic many-body effects. These include many-body neutral excitons, trions, biexcitons, and defect-induced excitons at room temperature, rarely realized in bulk materials. Nevertheless, the defect-induced trions correlated with charge screening have never been observed, and the corresponding BEs remain unknown. Here we report defect-induced A-trions and B-trions in monolayer tungsten disulfide (WS₂) via carrier screening engineering with photogenerated carrier modulation, external doping, and substrate scattering. Defect-induced trions strongly couple with inherent SiO₂ hole traps under high photocarrier densities and become more prominent in rhenium-doped WS₂. The absence of defect-induced trion peaks was confirmed using a trap-free hexagonal boron nitride substrate, regardless of power density. Moreover, many-body excitonic charge states and their BEs were compared via carrier screening engineering at room temperature. The highest BE was observed in the defect-induced A-trion state (∼214 meV), comparably higher than the trion (209 meV) and neutral exciton (174 meV), and further tuned by external photoinduced carrier density control. This investigation allows us to demonstrate defect-induced trion BE localization via spatial BE mapping in the monolayer WS₂ midflake regions distinctive from the flake edges.

Moiréless correlations in ABCA graphene

Atomically thin van der Waals materials stacked with an interlayer twist have proven to be an excellent platform toward achieving gate-tunable correlated phenomena linked to the formation of flat electronic bands. In this work we demonstrate the formation of emergent correlated phases in multilayer rhombohedral graphene--a simple material that also exhibits a flat electronic band edge but without the need of having a moiré superlattice induced by twisted van der Waals layers. We show that two layers of bilayer graphene that are twisted by an arbitrary tiny angle host large (micrometer-scale) regions of uniform rhombohedral four-layer (ABCA) graphene that can be independently studied. Scanning tunneling spectroscopy reveals that ABCA graphene hosts an unprecedentedly sharp van Hove singularity of 3-5-meV half-width. We demonstrate that when this van Hove singularity straddles the Fermi level, a correlated many-body gap emerges with peak-to-peak value of 9.5 meV at charge neutrality. Mean-field theoretical calculations for model with short-ranged interactions indicate that two primary candidates for the appearance of this broken symmetry state are a charge-transfer excitonic insulator and a ferrimagnet. Finally, we show that ABCA graphene hosts surface topological helical edge states at natural interfaces with ABAB graphene which can be turned on and off with gate voltage, implying that small-angle twisted double-bilayer graphene is an ideal programmable topological quantum material.

Effect of CO Molecule Orientation on the Reduction of Cu-Based Nanoparticles

The adsorption of CO on the surface of Cu-based nanoparticles was studied in the presence of an external electric field by means of scanning tunneling microscopy (STM) and spectroscopy (STS). Nanoparticles were synthesized on the surface of a graphite support by the impregnation-precipitation method. The chemical composition of the surface of the nanoparticles was determined as a mixture of Cu₂O, Cu₄O₃ and CuO oxides. CO was adsorbed from the gas phase onto the surface of the nanoparticles. During the adsorption process, the potential differences ΔV = +1 or -1 V were applied to the vacuum gap between the sample and the grounded tip. Thus, the system of the STM tip and sample surface formed an asymmetric capacitor, inside which an inhomogeneous electric field existed. The CO adsorption process is accompanied by the partial reduction of nanoparticles. Due to the orientation of the CO molecule in the electric field, the reduction was weak in the case of a positive potential difference, while in the case of a negative potential difference, the reduction rate increased significantly. The ability to control the adsorption process of CO by means of an external electric field was demonstrated. The size of the nanoparticle was shown to be the key factor affecting the adsorption process, and particularly, the strength of the local electric field close to the nanoparticle surface.

Engineering a Robust Flat Band in III-V Semiconductor Heterostructures

Electron states in semiconductor materials can be modified by quantum confinement. Adding to semiconductor heterostructures the concept of lateral geometry offers the possibility to further tailor the electronic band structure with the creation of unique flat bands. Using block copolymer lithography, we describe the design, fabrication, and characterization of multiorbital bands in a honeycomb In_0.53Ga_0.47As/InP heterostructure quantum well with a lattice constant of 21 nm. Thanks to an optimized surface quality, scanning tunnelling spectroscopy reveals the existence of a strong resonance localized between the lattice sites, signature of a p-orbital flat band. Together with theoretical computations, the impact of the nanopatterning imperfections on the band structure is examined. We show that the flat band is protected against the lateral and vertical disorder, making this industry-standard system particularly attractive for the study of exotic phases of matter.