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Tian Q, Bagheri Tagani M, Izadi Vishkayi S, Zhang C, Li B, Zhang L, Yin LJ, Tian Y, Zhang L, Qin Z. Twist-Angle Tuning of Electronic Structure in Two-Dimensional Dirac Nodal Line Semimetal Au 2Ge on Au(111). ACS Nano 2024; 18:9011-9018. [PMID: 38470156 DOI: 10.1021/acsnano.3c12753] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/13/2024]
Abstract
Topological semimetals have emerged as quantum materials including Dirac, Weyl, and nodal line semimetals, and so on. Dirac nodal line (DNL) semimetals possess topologically nontrivial bands crossing along a line or a loop and are considered precursor states for other types of semimetals. Here, we combine scanning tunneling microscopy/spectroscopy (STM/S) measurements and density functional theory (DFT) calculations to investigate a twist angle tuning of electronic structure in two-dimensional DNL semimetal Au2Ge. Theoretical calculations show that two bands of Au2Ge touch each other in Γ-M and Γ-K paths, forming a DNL. A significant transition of electronic structure occurs by tuning the twist angle from 30° to 24° between monolayer Au2Ge and Au(111), as confirmed by STS measurements and DFT calculations. The disappearing of DNL state is a direct consequence of symmetry breaking.
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Affiliation(s)
- Qiwei Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Meysam Bagheri Tagani
- Department of Physics, University of Guilan, P.O. Box 41335-1914, 32504550, Rasht, Iran
| | - Sahar Izadi Vishkayi
- School of Physics, Institute for Research in Fundamental Sciences (IPM), P.O. Box 19395-5531, Tehran, Iran
| | - Chen Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Bo Li
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Li Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Long-Jing Yin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yuan Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Lijie Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Zhihui Qin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
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2
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Li K, Yin LJ, Che C, Zhang S, Liu X, Xiao Y, Liu S, Tong Q, Li SY, Pan A. Correlation-Induced Symmetry-Broken States in Large-Angle Twisted Bilayer Graphene on MoS 2. ACS Nano 2024; 18:7937-7944. [PMID: 38441035 DOI: 10.1021/acsnano.3c09993] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/06/2024]
Abstract
Strongly correlated states commonly emerge in twisted bilayer graphene (TBG) with "magic-angle" (1.1°), where the electron-electron (e-e) interaction U becomes prominent relative to the small bandwidth W of the nearly flat band. However, the stringent requirement of this magic angle makes the sample preparation and the further application facing great challenges. Here, using scanning tunneling microscopy (STM) and spectroscopy (STS), we demonstrate that the correlation-induced symmetry-broken states can also be achieved in a 3.45° TBG, via engineering this nonmagic-angle TBG into regimes of U/W > 1. We enhance the e-e interaction through controlling the microscopic dielectric environment by using a MoS2 substrate. Simultaneously, the width of the low-energy van Hove singularity (VHS) peak is reduced by enhancing the interlayer coupling via STM tip modulation. When partially filled, the VHS peak exhibits a giant splitting into two states flanked by the Fermi level and shows a symmetry-broken LDOS distribution with a stripy charge order, which confirms the existence of strong correlation effect in our 3.45° TBG. Our result demonstrates the feasibility of the study and application of the correlation physics in TBGs with a wider range of twist angle.
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Affiliation(s)
- Kaihui Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration and College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Long-Jing Yin
- School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Chenglong Che
- School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Shihao Zhang
- School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Xueying Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration and College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Yulong Xiao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration and College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Songlong Liu
- School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Qingjun Tong
- School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Si-Yu Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration and College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
- Greater Bay Area Institute for Innovation, Hunan University, Guangzhou 511300, People's Republic of China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration and College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
- School of Physics and Electronics, Hunan Normal University, Changsha 410081, People's Republic of China
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3
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Tian Q, Izadi Vishkayi S, Bagheri Tagani M, Zhang L, Tian Y, Yin LJ, Zhang L, Qin Z. Two-Dimensional Artificial Ge Superlattice Confining in Electronic Kagome Lattice Potential Valleys. Nano Lett 2023; 23:9851-9857. [PMID: 37871176 DOI: 10.1021/acs.nanolett.3c02674] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/25/2023]
Abstract
Constructing two-dimensional (2D) artificial superlattices based on single-atom and few-atom nanoclusters is of great interest for exploring exotic physics. Here we report the realization of two types of artificial germanium (Ge) superlattice self-confined by a 37 × 37 R25.3° superstructure of bismuth (Bi) induced electronic kagome lattice potential valleys. Scanning tunneling microscopy measurements demonstrate that Ge atoms prefer to be confined in the center of the Bi electronic kagome lattice, forming a single-atom superlattice at 120 K. In contrast, room temperature grown Ge atoms and clusters are confined in the sharing triangle corner and the center, respectively, of the kagome lattice potential valleys, forming an artificial honeycomb superlattice. First-principle calculations and Mulliken population analysis corroborate that our reported atomically thin Bi superstructure on Au(111) has a kagome surface potential valley with the center of the inner Bi hexagon and the space between the outer Bi hexagons being energetically favorable for trapping Ge atoms.
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Affiliation(s)
- Qiwei Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Sahar Izadi Vishkayi
- School of Physics, Institute for Research in Fundamental Sciences (IPM), Tehran 19395-5531, Iran
| | - Meysam Bagheri Tagani
- Department of Physics, University of Guilan, P.O. Box 41335-1914, Rasht 32504550, Iran
| | - Li Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yuan Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Long-Jing Yin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Lijie Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Zhihui Qin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
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4
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Yin LJ, He LY, Lu GP, Cao Y, Wang LS, Zhai XW, Wang CQ. Active screening and patient-placement and cohort-placement strategies to decrease carbapenem-resistant gram-negative bacilli colonization and infection in pediatric patients: A 5-year retrospective observational study in China. Infect Control Hosp Epidemiol 2023; 44:1666-1669. [PMID: 37088554 PMCID: PMC10587376 DOI: 10.1017/ice.2023.20] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/08/2022] [Revised: 01/05/2023] [Accepted: 01/19/2023] [Indexed: 04/25/2023]
Abstract
Carbapenem-resistant gram-negative bacilli (CR-GNB) colonization screening was initiated across high-risk departments (PICU, NICU, neonatal wards, and hematology departments) in January 2017, and several CR-GNB cohort and patient-placement strategies were introduced throughout the hospital in January 2018. The colonization and infection rates decreased to varying degrees from 2017 to 2021.
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Affiliation(s)
- LJ Yin
- Department of Nosocomial Infection Control, Children’s Hospital of Fudan University, Shanghai, China
| | - LY He
- Clinical Microbiology Laboratory, Children’s Hospital of Fudan University, Shanghai, China
| | - GP Lu
- Pediatric Intensive Care Unit, Children’s Hospital of Fudan University, Shanghai, China
| | - Y Cao
- Neonatal Intensive Care Unit, Children’s Hospital of Fudan University, Shanghai, China
| | - LS Wang
- Department of Neonatology, Children’s Hospital of Fudan University, Shanghai, China
| | - XW Zhai
- Department of Hematology, Children’s Hospital of Fudan University, Shanghai, China
| | - CQ Wang
- Department of Nosocomial Infection Control, Children’s Hospital of Fudan University, Shanghai, China
- Clinical Microbiology Laboratory, Children’s Hospital of Fudan University, Shanghai, China
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5
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Gong X, Zhou Y, Xia J, Zhang L, Zhang L, Yin LJ, Hu Y, Qin Z, Tian Y. Tunable non-volatile memories based on 2D InSe/ h-BN/GaSe heterostructures towards potential multifunctionality. Nanoscale 2023; 15:14448-14457. [PMID: 37615579 DOI: 10.1039/d3nr02995f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/25/2023]
Abstract
Floating-gate memories based on two-dimensional van der Waal (2D vdW) heterostructures play an important role in the development of next-generation information technology. The diversity of 2D vdW materials and their heterostructures provides flexibility in the design of novel storage architectures. However, 2D InSe/h-BN/GaSe heterostructures are rarely reported in the field of tunable non-volatile memories, probably due to the quality limitation of materials and complex interfaces from stackings. Herein, a floating-gate 2D InSe/h-BN/GaSe memory with high performance and atmosphere stability is demonstrated. It exhibits both a large ON/OFF current ratio of ∼105 and a good extinction ratio of ∼103, with an estimated maximum storage capacity of 5.1 × 1012 cm-2. Moreover, the storage performance can be regulated by optimizing the thickness of the insulating h-BN layer. Different device configurations have been explored to validate the working mechanism. Furthermore, a simulation of biological synaptic behavior is achieved on the same prototype device. The enhanced non-volatile characteristics enable the exploration of the integrated 2D memory and potential multifunctionality.
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Affiliation(s)
- Xiang Gong
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, P.R. China.
| | - Yueying Zhou
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, P.R. China.
| | - Jiangnan Xia
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, P.R. China.
| | - Li Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, P.R. China.
| | - Lijie Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, P.R. China.
| | - Long-Jing Yin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, P.R. China.
| | - Yuanyuan Hu
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, China
| | - Zhihui Qin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, P.R. China.
| | - Yuan Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, P.R. China.
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, China
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Wang J, Bagheri Tagani M, Zhang L, Xia Y, Wu Q, Li B, Tian Y, Yin LJ, Zhang L, Qin Z. Realization of black phosphorus-like PbSe monolayer on Au(111) via epitaxial growth. J Phys Condens Matter 2023; 35:485002. [PMID: 37586387 DOI: 10.1088/1361-648x/acf107] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2023] [Accepted: 08/16/2023] [Indexed: 08/18/2023]
Abstract
Lead selenide (PbSe) has been attracted a lot attention in fundamental research and industrial applications due to its excellent infrared optical and thermoelectric properties, toward reaching the two-dimensional limit. Herein, we realize the black phosphorus-like PbSe (α-phase PbSe) monolayer on Au(111) via epitaxial growth, where a characteristic rectangular superlattice of 5 Å × 9 Å corresponding to 1 × 2 reconstruction with respect to the pristine ofα-phase PbSe is observed by scanning tunneling microscopy. Corresponding density functional theory calculation confirmed the reconstruction and revealed the driven mechanism, the coupling between monolayer PbSe and Au(111) substrate. The metallic feature of differential conductance spectra as well as the transition of the density of states from semiconductor to metal further verified such coupling. As the unique anisotropic structure, our study provides a pathway towards the synthesis of BP-PbSe monolayer. In addition, it builds up an ideal platform for studying fundamental physics and also excellent prospects in PbSe-based device applications.
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Affiliation(s)
- Jing Wang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | | | - Li Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Yu Xia
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Qilong Wu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Bo Li
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Yuan Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Long-Jing Yin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Lijie Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Zhihui Qin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
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Hu H, Jiang YJ, Xu L, Yin LJ, Liu XF, Yin SY, Xu JJ, He MX. [Pathological significance of plasma cell infiltration in diagnosing lymph node diseases]. Zhonghua Bing Li Xue Za Zhi 2023; 52:702-709. [PMID: 37408401 DOI: 10.3760/cma.j.cn112151-20230114-00040] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Subscribe] [Scholar Register] [Indexed: 07/07/2023]
Abstract
Objective: To investigate the value of plasma cells for diagnosing lymph node diseases. Methods: Common lymphadenopathy (except plasma cell neoplasms) diagnosed from September 2012 to August 2022 were selected from the pathological records of Changhai Hospital, Shanghai, China. Morphological and immunohistochemical features were analyzed to examine the infiltration pattern, clonality, and IgG and IgG4 expression of plasma cells in these lymphadenopathies, and to summarize the differential diagnoses of plasma cell infiltration in common lymphadenopathies. Results: A total of 236 cases of lymphadenopathies with various degrees of plasma cell infiltration were included in the study. There were 58 cases of Castleman's disease, 55 cases of IgG4-related lymphadenopathy, 14 cases of syphilitic lymphadenitis, 2 cases of rheumatoid lymphadenitis, 18 cases of Rosai-Dorfman disease, 23 cases of Kimura's disease, 13 cases of dermal lymphadenitis and 53 cases of angioimmunoblastic T-cell lymphoma (AITL). The main features of these lymphadenopathies were lymph node enlargement with various degrees of plasm cell infiltration. A panel of immunohistochemical antibodies were used to examine the distribution of plasma cells and the expression of IgG and IgG4. The presence of lymph node architecture could help determine benign and malignant lesions. The preliminary classification of these lymphadenopathies was based on the infiltration features of plasma cells. The evaluation of IgG and IgG4 as a routine means could exclude the lymph nodes involvement of IgG4-related dieases (IgG4-RD), and whether it was accompanied by autoimmune diseases or multiple-organ diseases, which were of critical evidence for the differential diagnosis. For common lesions of lymphadenopathies, such as Castleman's disease, Kimura's disease, Rosai-Dorfman's disease and dermal lymphadenitis, the expression ratio of IgG4/IgG (>40%) as detected using immunhistochemistry and serum IgG4 levels should be considered as a standard for the possibility of IgG4-RD. The differential diagnosis of multicentric Castleman's diseases and IgG4-RD should be also considered. Conclusions: Infiltration of plasma cells and IgG4-positive plasma cells may be detected in some types of lymphadenopathies and lymphomas in clinicopathological daily practice, but not all of them are related to IgG4-RD. It should be emphasized that the characteristics of plasma cell infiltration and the ratio of IgG4/IgG (>40%) should be considered for further differential diagnosis and avoiding misclassification of lymphadenopathies.
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Affiliation(s)
- H Hu
- Department of Pathology, Changhai Hospital, Naval Military Medical University, Shanghai 200433, China
| | - Y J Jiang
- Department of Pathology, Changhai Hospital, Naval Military Medical University, Shanghai 200433, China
| | - L Xu
- Department of Pathology, Changhai Hospital, Naval Military Medical University, Shanghai 200433, China
| | - L J Yin
- Department of Pathology, Changhai Hospital, Naval Military Medical University, Shanghai 200433, China
| | - X F Liu
- Department of Pathology, Changhai Hospital, Naval Military Medical University, Shanghai 200433, China
| | - S Y Yin
- Department of Pathology, Changhai Hospital, Naval Military Medical University, Shanghai 200433, China
| | - J J Xu
- Department of Pathology, Changhai Hospital, Naval Military Medical University, Shanghai 200433, China
| | - M X He
- Department of Pathology, Changhai Hospital, Naval Military Medical University, Shanghai 200433, China
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Li B, Wang J, Wu Q, Tian Q, Li P, Zhang L, Yin LJ, Tian Y, Johnny Wong PK, Qin Z, Zhang L. Nanopore-Patterned CuSe Drives the Realization of the PbSe-CuSe Lateral Heterostructure. ACS Appl Mater Interfaces 2022; 14:32738-32746. [PMID: 35802412 DOI: 10.1021/acsami.2c08397] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Monolayer PbSe has been predicted to be a two-dimensional (2D) topological crystalline insulator (TCI) with crystalline symmetry-protected Dirac-cone-like edge states. Recently, few-layered epitaxial PbSe has been grown on the SrTiO3 substrate successfully, but the corresponding signature of the TCI was only observed for films not thinner than seven monolayers, largely due to interfacial strain. Here, we demonstrate a two-step method based on molecular beam epitaxy for the growth of the PbSe-CuSe lateral heterostructure on the Cu(111) substrate, in which we observe a nanopore-patterned CuSe layer that acts as the template for lateral epitaxial growth of PbSe. This further results in a PbSe-CuSe lateral heterostructure with an atomically sharp interface. Scanning tunneling microscopy and spectroscopy measurements reveal a fourfold symmetric square lattice of such PbSe with a quasi-particle band gap of 1.8 eV, a value highly comparable with the theoretical value of freestanding PbSe. The weak monolayer-substrate interaction is further supported by both density functional theory (DFT) and projected crystal orbital Hamilton population, with the former predicting the monolayer's anti-bond state to reside below the Fermi level. Our work demonstrates a practical strategy to fabricate a high-quality in-plane heterostructure, involving a monolayer TCI, which is viable for further exploration of the topology-derived quantum physics and phenomena in the monolayer limit.
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Affiliation(s)
- Bo Li
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Jing Wang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Qilong Wu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Qiwei Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Ping Li
- State Key Laboratory for Mechanical Behavior of Materials, Center for Spintronics and Quantum Systems, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
| | - Li Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Long-Jing Yin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Yuan Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Ping Kwan Johnny Wong
- School of Microelectronics, Northwestern Polytechnical University, Xi'an 710072, People's Republic of China
- Shaanxi & NPU Chongqing Technology Innovation Center, Chongqing 400000, People's Republic of China
| | - Zhihui Qin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Lijie Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
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9
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Wu Q, Bagheri Tagani M, Zhang L, Wang J, Xia Y, Zhang L, Xie SY, Tian Y, Yin LJ, Zhang W, Rudenko AN, Wee ATS, Wong PKJ, Qin Z. Electronic Tuning in WSe 2/Au via van der Waals Interface Twisting and Intercalation. ACS Nano 2022; 16:6541-6551. [PMID: 35285624 DOI: 10.1021/acsnano.2c00916] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The transition metal dichalcogenide (TMD)-metal interfaces constitute an active part of TMD-based electronic devices with optimized performances. Despite their decisive role, current strategies for nanoscale electronic tuning remain limited. Here, we demonstrate electronic tuning in the WSe2/Au interface by twist engineering, capable of modulating the WSe2 carrier doping from an intrinsic p-type to n-type. Scanning tunneling microscope/spectroscopy gives direct evidence of enhanced interfacial interaction induced doping in WSe2 as the twist angle with respect to the topmost (100) lattice of gold changing from 15 to 0°. Taking advantage of the strong coupling interface achieved this way, we have moved a step further to realize an n-p-n-type WSe2 homojunction. The intrinsic doping of WSe2 can be recovered by germanium intercalation. Density functional theory calculations confirm that twist angle and intercalation-dependent charge transfer related doping are involved in our observations. Our work offers ways for electronically tuning the metal-2D semiconductor interface.
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Affiliation(s)
- Qilong Wu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, PR China
| | - Meysam Bagheri Tagani
- Department of Physics, University of Guilan, P.O. Box 41335-1914, Rasht 32504550, Iran
| | - Lijie Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, PR China
| | - Jing Wang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, PR China
| | - Yu Xia
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, PR China
| | - Li Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, PR China
| | - Sheng-Yi Xie
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, PR China
| | - Yuan Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, PR China
| | - Long-Jing Yin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, PR China
| | - Wen Zhang
- School of Microelectronics, Northwestern Polytechnical University, Xi'an 710072, Shaanxi & NPU Chongqing Technology Innovation Center, Chongqing 400000, PR China
| | - Alexander N Rudenko
- Institute for Molecules and Materials, Radboud University, Heijendaalseweg 135, 6525 AJ Nijmegen, The Netherlands
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551, Singapore
- Centre for Advanced 2D Materials (CA2DM) and Graphene Research Centre (GRC), National University of Singapore, 6 Science Drive 2, 117546, Singapore
| | - Ping Kwan Johnny Wong
- School of Microelectronics, Northwestern Polytechnical University, Xi'an 710072, Shaanxi & NPU Chongqing Technology Innovation Center, Chongqing 400000, PR China
| | - Zhihui Qin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, PR China
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10
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Tong LH, Tong Q, Yang LZ, Zhou YY, Wu Q, Tian Y, Zhang L, Zhang L, Qin Z, Yin LJ. Spectroscopic Visualization of Flat Bands in Magic-Angle Twisted Monolayer-Bilayer Graphene: Coexistence of Localization and Delocalization. Phys Rev Lett 2022; 128:126401. [PMID: 35394312 DOI: 10.1103/physrevlett.128.126401] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/17/2021] [Accepted: 02/25/2022] [Indexed: 06/14/2023]
Abstract
Recent transport studies have demonstrated the great potential of twisted monolayer-bilayer graphene (TMBG) as a new platform to host moiré flat bands with a higher tunability than twisted bilayer graphene (TBG). However, a direct visualization of the flat bands in TMBG and its comparison with the ones in TBG remain unexplored. Here, via fabricating on a single sample with exactly the same twist angle of ∼1.13°, we present a direct comparative study between TMBG and TBG using scanning tunneling microscopy and spectroscopy. We observe a sharp density of states peak near the Fermi energy in tunneling spectroscopy, confirming unambiguously the existence of flat electronic bands in TMBG. The bandwidth of this flat-band peak is found to be slightly narrower than that of the TBG, validating previous theoretical predictions. Remarkably, by measuring spatially resolved spectroscopy, combined with continuum model calculation, we show that the flat-band states in TMBG exhibit a unique layer-resolved localization-delocalization coexisting feature, which offers an unprecedented possibility to utilize their cooperation on exploring novel correlation phenomena. Our work provides important microscopic insight of flat-band states for better understanding the emergent physics in graphene moiré systems.
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Affiliation(s)
- Ling-Hui Tong
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Qingjun Tong
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Li-Zhen Yang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yue-Ying Zhou
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Qilong Wu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yuan Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Li Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Lijie Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Zhihui Qin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Long-Jing Yin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
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11
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Wu Q, Fu X, Yang K, Wu H, Liu L, Zhang L, Tian Y, Yin LJ, Huang WQ, Zhang W, Wong PKJ, Zhang L, Wee ATS, Qin Z. Promoting a Weak Coupling of Monolayer MoSe 2 Grown on (100)-Faceted Au Foil. ACS Nano 2021; 15:4481-4489. [PMID: 33656862 DOI: 10.1021/acsnano.0c08513] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
As a two-dimensional semiconductor with many physical properties, including, notably, layer-controlled electronic bandgap and coupled spin-valley degree of freedom, monolayer MoSe2 is a strong candidate material for next-generation opto- and valley-electronic devices. However, due to substrate effects such as lattice mismatch and dielectric screening, preserving the monolayer's intrinsic properties remains challenging. This issue is generally significant for metallic substrates whose active surfaces are commonly utilized to achieve direct chemical or physical vapor growth of the monolayer films. Here, we demonstrate high-temperature-annealed Au foil with well-defined (100) facets as a weakly interacting substrate for atmospheric pressure chemical vapor deposition of highly crystalline monolayer MoSe2. Low-temperature scanning tunneling microscopy/spectroscopy measurements reveal a honeycomb structure of MoSe2 with a quasi-particle bandgap of 1.96 eV, a value comparable with other weakly interacting systems such as MoSe2/graphite. Density functional theory calculations indicate that the Au(100) surface exhibits the preferred energetics to electronically decouple from MoSe2, compared with the (110) and (111) crystal planes. This weak coupling is critical for the easy transfer of monolayers to another host substrate. Our study demonstrates a practical means to produce high-quality monolayers of transition-metal dichalcogenides, viable for both fundamental and application studies.
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Affiliation(s)
- Qilong Wu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Xiaoshuai Fu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Ke Yang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Hongyu Wu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Li Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Li Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Yuan Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Long-Jing Yin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Wei-Qing Huang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Wen Zhang
- School of Microelectronics & School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710072, People's Republic of China
| | - Ping Kwan Johnny Wong
- School of Microelectronics & School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710072, People's Republic of China
| | - Lijie Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
- Centre for Advanced 2D Materials (CA2DM) and Graphene Research Centre (GRC), National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Zhihui Qin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
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12
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Liu YW, Su Y, Zhou XF, Yin LJ, Yan C, Li SY, Yan W, Han S, Fu ZQ, Zhang Y, Yang Q, Ren YN, He L. Tunable Lattice Reconstruction, Triangular Network of Chiral One-Dimensional States, and Bandwidth of Flat Bands in Magic Angle Twisted Bilayer Graphene. Phys Rev Lett 2020; 125:236102. [PMID: 33337177 DOI: 10.1103/physrevlett.125.236102] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2020] [Accepted: 11/02/2020] [Indexed: 05/12/2023]
Abstract
The interplay between interlayer van der Waals interaction and intralayer lattice distortion can lead to structural reconstruction in slightly twisted bilayer graphene (TBG) with the twist angle being smaller than a characteristic angle θ_{c}. Experimentally, the θ_{c} is demonstrated to be very close to the magic angle (θ≈1.08°). Here we address the transition between reconstructed and unreconstructed structures of the TBG across the magic angle by using scanning tunneling microscopy (STM). Our experiment demonstrates that both structures are stable in the TBG around the magic angle. By using a STM tip, we show that the two structures can be changed to each other and a triangular network of chiral one-dimensional states hosted by domain boundaries can be switched on and off. Consequently, the bandwidth of the flat band, which plays a vital role in the emergent strongly correlated states in the magic angle TBG, is tuned. This provides an extra control knob to manipulate the exotic electronic states of the TBG near the magic angle.
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Affiliation(s)
- Yi-Wen Liu
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Ying Su
- Theoretical Division, T-4 and CNLS, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
| | - Xiao-Feng Zhou
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Long-Jing Yin
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Chao Yan
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Si-Yu Li
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Wei Yan
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Sheng Han
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Zhong-Qiu Fu
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Yu Zhang
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Qian Yang
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Ya-Ning Ren
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Lin He
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
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13
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Zhao M, Yin LJ, Lei T, Zhang Z, Bu H. [Research progress of biomarkers in breast phyllodes tumours]. Zhonghua Bing Li Xue Za Zhi 2020; 49:507-510. [PMID: 32392944 DOI: 10.3760/cma.j.cn112151-20200112-00029] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Affiliation(s)
- M Zhao
- Department of Pathology/Pathology Laboratory, West China Hospital, Sichuan University, Chengdu 610041, China(Zhao Meng is working on the Department of Pathology, the Fourth Hospital of Hebei Medical University, Shijiazhuang 050021, China)
| | - L J Yin
- Department of Pathology/Pathology Laboratory, West China Hospital, Sichuan University, Chengdu 610041, China
| | - T Lei
- Department of Pathology/Pathology Laboratory, West China Hospital, Sichuan University, Chengdu 610041, China
| | - Z Zhang
- Department of Pathology/Pathology Laboratory, West China Hospital, Sichuan University, Chengdu 610041, China
| | - H Bu
- Department of Pathology/Pathology Laboratory, West China Hospital, Sichuan University, Chengdu 610041, China
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14
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Yin LJ, Shi LJ, Li SY, Zhang Y, Guo ZH, He L. High-Magnetic-Field Tunneling Spectra of ABC-Stacked Trilayer Graphene on Graphite. Phys Rev Lett 2019; 122:146802. [PMID: 31050464 DOI: 10.1103/physrevlett.122.146802] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2018] [Indexed: 06/09/2023]
Abstract
ABC-stacked trilayer graphene (TLG) was predicted to exhibit novel many-body phenomena due to the existence of almost dispersionless flat bands near the charge neutrality point. Here, using high-magnetic-field scanning tunneling microscopy, we present Landau Level (LL) spectroscopy measurements of high-quality ABC-stacked TLG on graphite. We observe an approximately linear magnetic-field scaling of valley splitting and spin splitting in the ABC-stacked TLG. Our experiment indicates that the spin splitting decreases dramatically with increasing the LL index. When the lowest LL is partially filled, we find an obvious enhancement of the spin splitting, attributing to strong many-body effects. Moreover, we observe linear energy scaling of the inverse lifetime of quasiparticles, providing an additional evidence for the strong electron-electron interactions in the ABC-stacked TLG. These results imply that interesting broken-symmetry states and novel electron correlated effects could emerge in the ABC-stacked TLG in the presence of high magnetic fields.
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Affiliation(s)
- Long-Jing Yin
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing, 100875, China
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Li-Juan Shi
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Si-Yu Li
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Yu Zhang
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Zi-Han Guo
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Lin He
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing, 100875, China
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15
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Zhang Y, Li SY, Huang H, Li WT, Qiao JB, Wang WX, Yin LJ, Bai KK, Duan W, He L. Scanning Tunneling Microscopy of the π Magnetism of a Single Carbon Vacancy in Graphene. Phys Rev Lett 2016; 117:166801. [PMID: 27792366 DOI: 10.1103/physrevlett.117.166801] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2016] [Indexed: 06/06/2023]
Abstract
Pristine graphene is strongly diamagnetic. However, graphene with single carbon atom defects could exhibit paramagnetism. Theoretically, the π magnetism induced by the monovacancy in graphene is characteristic of two spin-split density-of-states (DOS) peaks close to the Dirac point. Since its prediction, many experiments have attempted to study this π magnetism in graphene, whereas only a notable resonance peak has been observed around the atomic defects, leaving the π magnetism experimentally elusive. Here, we report direct experimental evidence of π magnetism by using a scanning tunneling microscope. We demonstrate that the localized state of the atomic defects is split into two DOS peaks with energy separations of several tens of meV. Strong magnetic fields further increase the energy separations of the two spin-polarized peaks and lead to a Zeeman-like splitting. Unexpectedly, the effective g factor around the atomic defect is measured to be about 40, which is about 20 times larger than the g factor for electron spins.
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Affiliation(s)
- Yu Zhang
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Si-Yu Li
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Huaqing Huang
- State Key Laboratory of Low-Dimensional Quantum Physics and Collaborative Innovation Center of Quantum Matter, Department of Physics, Tsinghua University, Beijing 100084, People's Republic of China
| | - Wen-Tian Li
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Jia-Bin Qiao
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Wen-Xiao Wang
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Long-Jing Yin
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Ke-Ke Bai
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Wenhui Duan
- State Key Laboratory of Low-Dimensional Quantum Physics and Collaborative Innovation Center of Quantum Matter, Department of Physics, Tsinghua University, Beijing 100084, People's Republic of China
| | - Lin He
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
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16
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Yin LJ, Jiang H, Qiao JB, He L. Direct imaging of topological edge states at a bilayer graphene domain wall. Nat Commun 2016; 7:11760. [PMID: 27312315 PMCID: PMC4915022 DOI: 10.1038/ncomms11760] [Citation(s) in RCA: 134] [Impact Index Per Article: 16.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/09/2015] [Accepted: 04/27/2016] [Indexed: 12/24/2022] Open
Abstract
The AB–BA domain wall in gapped graphene bilayers is a rare naked structure hosting topological electronic states. Although it has been extensively studied in theory, a direct imaging of its topological edge states is still missing. Here we image the topological edge states at the graphene bilayer domain wall by using scanning tunnelling microscope. The simultaneously obtained atomic-resolution images of the domain wall provide us unprecedented opportunities to measure the spatially varying edge states within it. The one-dimensional conducting channels are observed to be mainly located around the two edges of the domain wall, which is reproduced quite well by our theoretical calculations. Our experiment further demonstrates that the one-dimensional topological states are quite robust even in the presence of high magnetic fields. The result reported here may raise hopes of graphene-based electronics with ultra-low dissipation. Domain wall between gapped graphene bilayers is believed to host one-dimensional topological states, which is yet waiting for direct evidences. Here, Yin et al. report images of the AB-BA stacked bilayer graphene domain wall, providing direct evidence for topological edge states in such system.
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Affiliation(s)
- Long-Jing Yin
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Hua Jiang
- College of Physics, Optoelectronics and Energy, Soochow University, Suzhou 215006, China
| | - Jia-Bin Qiao
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Lin He
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, China
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17
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Zou X, Huang CW, Wang L, Yin LJ, Li W, Wang J, Wu B, Liu Y, Yao Q, Jiang C, Wu WW, He L, Chen S, Ho JC, Liao L. Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors. Adv Mater 2016; 28:2062-2069. [PMID: 26762171 DOI: 10.1002/adma.201505205] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/22/2015] [Revised: 11/20/2015] [Indexed: 06/05/2023]
Abstract
A unique design of a hexagonal boron nitride (h-BN)/HfO2 dielectric heterostructure stack is demonstrated, with few-layer h-BN to alleviate the surface optical phonon scattering, followed by high-κ HfO2 deposition to suppress Coulombic impurity scattering so that high-performance top-gated two-dimensional semiconductor transistors are achieved. Furthermore, this dielectric stack can also be extended to GaN-based transistors to enhance their performance.
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Affiliation(s)
- Xuming Zou
- Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China
| | - Chun-Wei Huang
- Department of Materials Science and Engineering, National Chiao Tung University, Hsin-chu, 30010, Taiwan
| | - Lifeng Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, 100190, China
| | - Long-Jing Yin
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Wenqing Li
- Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China
| | - Jingli Wang
- Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China
| | - Bin Wu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, 100190, China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, 100190, China
| | - Qian Yao
- Physics Department, Xiamen University, Xiamen, 361005, China
| | - Changzhong Jiang
- Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China
| | - Wen-Wei Wu
- Department of Materials Science and Engineering, National Chiao Tung University, Hsin-chu, 30010, Taiwan
| | - Lin He
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Shanshan Chen
- Physics Department, Xiamen University, Xiamen, 361005, China
| | - Johnny C Ho
- Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong SAR, China
| | - Lei Liao
- Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China
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18
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Fang CL, Yin LJ, Sharma S, Kierstein S, Wu HF, Eid G, Haczku A, Corrigan CJ, Ying S. Resistin-like molecule-β (RELM-β) targets airways fibroblasts to effect remodelling in asthma: from mouse to man. Clin Exp Allergy 2016; 45:940-952. [PMID: 25545115 DOI: 10.1111/cea.12481] [Citation(s) in RCA: 32] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/14/2014] [Revised: 11/12/2014] [Accepted: 12/16/2014] [Indexed: 01/15/2023]
Abstract
BACKGROUND RELM-β has been implicated in airways inflammation and remodelling in murine models. Its possible functions in human airways are largely unknown. The aim was to address the hypothesis that RELM-β plays a role in extracellular matrix deposition in asthmatic airways. METHODS The effects of RELM-β gene deficiency were studied in a model of allergen exposure in mice sensitised and challenged with Aspergillus fumigatus (Af). RELM-β expression was investigated in bronchial biopsies from asthmatic patients. Direct regulatory effects of RELM-β on human lung fibroblasts were examined using primary cultures and the MRC5 cell line in vitro. RESULTS Sensitisation and challenge of wild-type mice with Af-induced release of RELM-β with a time course coincident with that of procollagen in the airways. Af-induced expression of mRNA encoding some, but not all ECM in the lung parenchyma was attenuated in RELM-β-/- mice. RELM-β expression was significantly increased in the bronchial submucosa of human asthmatics compared with controls, and its expression correlated positively with that of fibronectin and α-smooth muscle actin. In addition to epithelial cells, macrophages, fibroblasts and vascular endothelial cells formed the majority of cells expressing RELM-β in the submucosa. Exposure to RELM-β increased TGF-β1, TGF-β2, collagen I, fibronectin, smooth muscle α-actin, laminin α1, and hyaluronan and proteoglycan link protein 1 (Hapl1) production as well as proliferation by human lung fibroblasts in vitro. These changes were associated with activation of ERK1/2 in MRC5 cells. CONCLUSION The data are consistent with the hypothesis that elevated RELM-β expression in asthmatic airways contributes to airways remodelling at least partly by increasing fibroblast proliferation and differentiation with resulting deposition of extracellular matrix proteins.
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Affiliation(s)
- C L Fang
- MRC & Asthma UK Centre for Allergic Mechanisms of Asthma, The Department of Asthma, Allergy and Respiratory Science, King's College London, London, UK
| | - L J Yin
- Tangshan Key Laboratory for Preclinical and Basic Research on Chronic Diseases and Division of Pharmacology, School of Basic Medical Science, Hebei United University, Hebei, China
| | - S Sharma
- Department of Medicine, University of Pennsylvania, Philadelphia, PA, USA
| | - S Kierstein
- Department of Medicine, University of Pennsylvania, Philadelphia, PA, USA
| | - H F Wu
- MRC & Asthma UK Centre for Allergic Mechanisms of Asthma, The Department of Asthma, Allergy and Respiratory Science, King's College London, London, UK
| | - G Eid
- MRC & Asthma UK Centre for Allergic Mechanisms of Asthma, The Department of Asthma, Allergy and Respiratory Science, King's College London, London, UK
| | - A Haczku
- Department of Medicine, University of Pennsylvania, Philadelphia, PA, USA
| | - C J Corrigan
- MRC & Asthma UK Centre for Allergic Mechanisms of Asthma, The Department of Asthma, Allergy and Respiratory Science, King's College London, London, UK
| | - S Ying
- MRC & Asthma UK Centre for Allergic Mechanisms of Asthma, The Department of Asthma, Allergy and Respiratory Science, King's College London, London, UK.,The Department of Immunology, School of Basic Medical Sciences, Capital Medical University, Beijing, China
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Sun YX, Gong CH, Liu S, Yuan XP, Yin LJ, Yan L, Shi TT, Dai JH. Effect of inhaled MgSO4 on FEV1 and PEF in children with asthma induced by acetylcholine: a randomized controlled clinical trail of 330 cases. J Trop Pediatr 2014; 60:141-7. [PMID: 24343824 DOI: 10.1093/tropej/fmt099] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Submit a Manuscript] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Abstract
OBJECTIVES To determine the response of nebulized magnesium sulfate on the lung function of acetylcholine-induced asthma children. METHODS Three hundred and thirty children of asthma with positive bronchial provocation test were randomly divided into three groups: magnesium sulfate, albuterol, and a combination of magnesium sulfate and albuterol. Lung function was compared between the three groups. RESULTS Forced expiratory volume in one second (FEV1) and peak expiratory flow (PEF) as percentage over predicted at 10 min and 20 min in albuterol and combination group were significantly improved when compared to magnesium group. The changes in FEV1 and PEF expressed as absolute and percentage over predicted was not statistically significant from baseline to 20 min in magnesium, albuterol, and combination of magnesium sulfate and albuterol. There was no significant adverse effect observed during the present study. CONCLUSION Nebulized magnesium sulfate alone has a bronchodilatory effect in Ach-induced asthmatic children. The combination of MgSO4 and albuterol did not has a synergistic effect.
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Affiliation(s)
- Y X Sun
- Ministry of Education Key Laboratory of Child Development and Disorders
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Ding K, Hill MT, Liu ZC, Yin LJ, van Veldhoven PJ, Ning CZ. Record performance of electrical injection sub-wavelength metallic-cavity semiconductor lasers at room temperature. Opt Express 2013; 21:4728-4733. [PMID: 23482005 DOI: 10.1364/oe.21.004728] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
We demonstrate a continuous wave (CW) sub-wavelength metallic-cavity semiconductor laser with electrical injection at room temperature (RT). Our metal-cavity laser with a cavity volume of 0.67λ3 (λ = 1591 nm) shows a linewidth of 0.5 nm at RT, which corresponds to a Q-value of 3182 compared to 235 of the cavity Q, the highest Q under lasing condition for RT CW operation of any sub-wavelength metallic-cavity laser. Such record performance provides convincing evidences of the feasibility of RT CW sub-wavelength metallic-cavity lasers, thus opening a wide range of practical possibilities of novel nanophotonic devices based on metal-semiconductor structures.
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Affiliation(s)
- K Ding
- School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA
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21
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Lu XH, Yin LJ. [Circadian rhythm in susceptibility of mice to the anti-tumor drug carboplatin]. Zhonghua Fu Chan Ke Za Zhi 1994; 29:729-31, 762. [PMID: 7712901] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Subscribe] [Scholar Register] [Indexed: 01/26/2023]
Abstract
The platinum-containing compounds has become a major chemical agent in the treatment of cancer. A circadian rhythm in the susceptibility of rodents and human being to cisplatin has been demonstrated, the maximal tolerance being found in the animal's active phase. Carboplatin is a second generation analog. Two studies were performed on mice with carboplatin under 12:12 light dark cycle to study its chronotoxicity and chronoeffectiveness. In study I, single intraperitoneal injection of 192mg/kg (LD50) carboplatin was given to four groups of mice at four different circadian stage. It was found that at 50% the overall mortality of mice, there was a mortality difference of 28% for mice receiving the drug at 9 a.m. to 71% for mice receiving drug at 9 p.m. It demonstrated that carboplatin was better tolerated in the animal's early sleep phase. In study II, S180 tumor-bearing mice were treated with 50mg/kg of carboplatin. The longest mean survival time and the lowest marrow toxicity occurred in the group which received the drug at the beginning of the sleep phase. It showed that the susceptibility of mice to carboplatin is circadian stage dependent. These data clearly demonstrate that, by timing the administration of drugs according to body rhythms, such as the host susceptibility-resistance rhythm to a drug, one can gain a therapeutic advantage over an approach which ignores such rhythms.
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Affiliation(s)
- X H Lu
- Affiliated Hospital of Shan dong Medical University, Jinan
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22
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Yin LJ. [Prognostic factors of endometrial carcinoma: a study of 98 cases]. Zhonghua Fu Chan Ke Za Zhi 1993; 28:150-2, 188. [PMID: 8354094] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Subscribe] [Scholar Register] [Indexed: 01/30/2023]
Abstract
Ninety-eight cases of endometrial carcinoma treated in our hospital during 1965-1988 were reviewed. The 5-year survival rate was 64.3%. Many factors were found to be related to 5-year survival: clinical stage, histological type, histological grade, depth of myometrial invasion and the amount of lymphocytic infiltration around islands of tumour cells. Earlier clinical stage, higher histological grade and less myometrial invasion had more favorable prognosis. Adenocarcinoma and adenoacanthoma had more favorable prognosis when compared with adenosquamous carcinoma and papillary adenocarcinoma. The more the amount of lymphocytic infiltration, the better prognosis. No correlation was found between the 5-year survival rate and the uterine size, the therapeutic modality, the age, parity, menstrual state of patient.
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Affiliation(s)
- L J Yin
- Affiliated Hospital, Shandong Medical University, Jinan
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