Huang X, Xiong R, Hao C, Beck P, Sa B, Wiebe J, Wiesendanger R. 2D Lateral Heterojunction Arrays with Tailored Interface Band Bending.
Adv Mater 2024:e2308007. [PMID:
38315969 DOI:
10.1002/adma.202308007]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Revised: 12/24/2023] [Indexed: 02/07/2024]
Abstract
Two-dimensional (2D) lateral heterojunction arrays, characterized by well-defined electronic interfaces, hold significant promise for advancing next-generation electronic devices. Despite this potential, the efficient synthesis of high-density lateral heterojunctions with tunable interfacial band alignment remains a challenging. Here, a novel strategy is reported for the fabrication of lateral heterojunction arrays between monolayer Si2 Te2 grown on Sb2 Te3 (ML-Si2 Te2 @Sb2 Te3 ) and one-quintuple-layer Sb2 Te3 grown on monolayer Si2 Te2 (1QL-Sb2 Te3 @ML-Si2 Te2 ) on a p-doped Sb2 Te3 substrate. The site-specific formation of numerous periodically arranged 2D ML-Si2 Te2 @Sb2 Te3 /1QL-Sb2 Te3 @ML-Si2 Te2 lateral heterojunctions is realized solely through three epitaxial growth steps of thick-Sb2 Te3 , ML-Si2 Te2 , and 1QL-Sb2 Te3 films, sequentially. More importantly, the precisely engineering of the interfacial band alignment is realized, by manipulating the substrate's p-doping effect with lateral spatial dependency, on each ML-Si2 Te2 @Sb2 Te3 /1QL-Sb2 Te3 @ML-Si2 Te2 junction. Atomically sharp interfaces of the junctions with continuous lattices are observed by scanning tunneling microscopy. Scanning tunneling spectroscopy measurements directly reveal the tailored type-II band bending at the interface. This reported strategy opens avenues for advancing lateral epitaxy technology, facilitating practical applications of 2D in-plane heterojunctions.
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