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Emelianov AV, Pettersson M, Bobrinetskiy II. Ultrafast Laser Processing of 2D Materials: Novel Routes to Advanced Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2402907. [PMID: 38757602 DOI: 10.1002/adma.202402907] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2024] [Revised: 04/23/2024] [Indexed: 05/18/2024]
Abstract
Ultrafast laser processing has emerged as a versatile technique for modifying materials and introducing novel functionalities. Over the past decade, this method has demonstrated remarkable advantages in the manipulation of 2D layered materials, including synthesis, structuring, functionalization, and local patterning. Unlike continuous-wave and long-pulsed optical methods, ultrafast lasers offer a solution for thermal heating issues. Nonlinear interactions between ultrafast laser pulses and the atomic lattice of 2D materials substantially influence their chemical and physical properties. This paper highlights the transformative role of ultrafast laser pulses in maskless green technology, enabling subtractive, and additive processes that unveil ways for advanced devices. Utilizing the synergetic effect between the energy states within the atomic layers and ultrafast laser irradiation, it is feasible to achieve unprecedented resolutions down to several nanometers. Recent advancements are discussed in functionalization, doping, atomic reconstruction, phase transformation, and 2D and 3D micro- and nanopatterning. A forward-looking perspective on a wide array of applications of 2D materials, along with device fabrication featuring novel physical and chemical properties through direct ultrafast laser writing, is also provided.
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Affiliation(s)
- Aleksei V Emelianov
- Nanoscience Center, Department of Chemistry, University of Jyväskylä, Jyväskylä, FI-40014, Finland
| | - Mika Pettersson
- Nanoscience Center, Department of Chemistry, University of Jyväskylä, Jyväskylä, FI-40014, Finland
| | - Ivan I Bobrinetskiy
- BioSense Institute - Research and Development Institute for Information Technologies in Biosystems, University of Novi Sad, Novi Sad, 21000, Serbia
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2
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Liu B, Yue X, Sheng C, Chen J, Tang C, Shan Y, Han J, Shen S, Wu W, Li L, Lu Y, Hu L, Liu R, Qiu ZJ, Cong C. High-Performance Contact-Doped WSe 2 Transistors Using TaSe 2 Electrodes. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19247-19253. [PMID: 38591143 DOI: 10.1021/acsami.4c01605] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/10/2024]
Abstract
Two-dimensional (2D) transitional metal dichalcogenides (TMDs) have garnered significant attention due to their potential for next-generation electronics, which require device scaling. However, the performance of TMD-based field-effect transistors (FETs) is greatly limited by the contact resistance. This study develops an effective strategy to optimize the contact resistance of WSe2 FETs by combining contact doping and 2D metallic electrode materials. The contact regions were doped using a laser, and the metallic TaSe2 flakes were stacked on doped WSe2 as electrodes. Doping the contact areas decreases the depletion width, while introducing the TaSe2 contact results in a lower Schottky barrier. This method significantly improves the electrical performance of the WSe2 FETs. The doped WSe2/TaSe2 contact exhibits an ultralow Schottky barrier height of 65 meV and a contact resistance of 11 kΩ·μm, which is a 50-fold reduction compared to the conventional Cr/Au contact. Our method offers a way on fabricating high-performance 2D FETs.
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Affiliation(s)
- Bingjie Liu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Xiaofei Yue
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Chenxu Sheng
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Jiajun Chen
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Chengjie Tang
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Yabing Shan
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Jinkun Han
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Shuwen Shen
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Wenxuan Wu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Lijia Li
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Ye Lu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Laigui Hu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Ran Liu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Zhi-Jun Qiu
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Chunxiao Cong
- School of Information Science and Technology, Fudan University, Shanghai, 200433, China
- Yiwu Research Institute of Fudan University, Yiwu, Zhejiang 322000, China
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3
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Yan Q, Weng Y, Wang S, Zhou Z, Hu Y, Li Q, Xue J, Feng Z, Luo Z, Feng R, You L, Fang L. Ambient Degradation Anisotropy and Mechanism of van der Waals Ferroelectric NbOI 2. ACS APPLIED MATERIALS & INTERFACES 2024; 16:9051-9059. [PMID: 38348475 DOI: 10.1021/acsami.3c18018] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/23/2024]
Abstract
The spontaneous centrosymmetry-breaking and robust room-temperature ferroelectricity in niobium oxide dihalides spurs a flurry of explorations into its promising second-order nonlinear optical properties, and promises potential applications in nonvolatile electro-optical and optoelectronic devices. However, the ambient stability of the niobium oxide dihalides remains questionable, which overshadows their future development. In this work, the chemical degradation of NbOI2 is comprehensively investigated using combined chemical and optical microscopies in conjunction with spectroscopies. We unveil the highly anisotropic degradation kinetics of NbOI2 driven by the hydrolysis process of the unstable dangling iodine bonds dominantly on the (010) facet and progressing along the c axis. Knowing its degradation mechanism, the NbOI2 flake can then be stabilized by the hexagonal boron nitride encapsulation, which isolates the air moisture. These findings provide direct insights into the ambient instability of NbOI2, and they deliver possible solutions to circumvent this issue, which are essential for its practical integration in photonic and electronic devices.
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Affiliation(s)
- Qingyu Yan
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Yuyan Weng
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Shun Wang
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Zhou Zhou
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Yiqi Hu
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Qiankun Li
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Jinshuo Xue
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Zhijian Feng
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Zhongshen Luo
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Runcang Feng
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Lu You
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Liang Fang
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
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Guan Y, Ding Y, Fang Y, Wang G, Zhao S, Wang L, Huang J, Chen M, Hao J, Xu C, Zhen L, Huang F, Li Y, Yang L. Femtosecond Laser-Driven Phase Engineering of WS 2 for Nano-Periodic Phase Patterning and Sub-ppm Ammonia Gas Sensing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2303654. [PMID: 37415518 DOI: 10.1002/smll.202303654] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/01/2023] [Revised: 06/19/2023] [Indexed: 07/08/2023]
Abstract
Laser-driven phase transition of 2D transition metal dichalcogenides has attracted much attention due to its high flexibility and rapidity. However, there are some limitations during the laser irradiation process, especially the unsatisfied surface ablation, the inability of nanoscale phase patterning, and the unexploited physical properties of new phase. In this work, the well-controlled femtosecond (fs) laser-driven transformation from the metallic 2M-WS2 to the semiconducting 2H-WS2 is reported, which is confirmed to be a single-crystal to single-crystal transition without layer thinning or obvious ablation. Moreover, a highly ordered 2H/2M nano-periodic phase transition with a resolution of ≈435 nm is achieved, breaking through the existing size bottleneck of laser-driven phase transition, which is attributed to the selective deposition of plasmon energy induced by fs laser. It is also demonstrated that the achieved 2H-WS2 after laser irradiation contains rich sulfur vacancies, which exhibits highly competitive ammonia gas sensing performance, with a detection limit below 0.1 ppm and a fast response/recovery time of 43/67 s at room temperature. This study provides a new strategy for the preparation of the phase-selective transition homojunction and high-performance applications in electronics.
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Affiliation(s)
- Yanchao Guan
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
| | - Ye Ding
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
| | - Yuqiang Fang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics Chinese Academy of Sciences, Shanghai, 200050, China
| | - Genwang Wang
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
| | - Shouxin Zhao
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Lianfu Wang
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
| | - Jingtao Huang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Mengxin Chen
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Juanyuan Hao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Chengyan Xu
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Liang Zhen
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Fuqiang Huang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics Chinese Academy of Sciences, Shanghai, 200050, China
| | - Yang Li
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Lijun Yang
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, Heilongjiang, 150001, China
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Aly MA, Enakerakpor EO, Koch M, Masenda H. Tuning Interlayer Exciton Emission with TMD Alloys in van der Waals Heterobilayers of Mo 0.5W 0.5Se 2 and Its Binary Counterparts. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2769. [PMID: 37887920 PMCID: PMC10609229 DOI: 10.3390/nano13202769] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2023] [Revised: 10/12/2023] [Accepted: 10/14/2023] [Indexed: 10/28/2023]
Abstract
Semiconductor heterostructures have been the backbone of developments in electronic and optoelectronic devices. One class of structures of interest is the so-called type II band alignment, in which optically excited electrons and holes relax into different material layers. The unique properties observed in two-dimensional transition metal dichalcogenides and the possibility to engineer van der Waals heterostructures make them candidates for future high-tech devices. In these structures, electronic, optical, and magnetic properties can be tuned through the interlayer coupling, thereby opening avenues for developing new functional materials. We report the possibility of explicitly tuning the emission of interlayer exciton energies in the binary-ternary heterobilayer of Mo0.5W0.5Se2 with MoSe2 and WSe2. The respective interlayer energies of 1.516 eV and 1.490 eV were observed from low-temperature photoluminescence measurements for the MoSe2- and WSe2- based heterostructures, respectively. These interlayer emission energies are above those reported for MoSe2/WSe2 (≃1.30-1.45 eV). Consequently, binary-ternary heterostructure systems offer an extended energy range and tailored emission energies not accessible with the binary counterparts. Moreover, even though Mo0.5W0.5Se2 and MoSe2 have almost similar optical gaps, their band offsets are different, resulting in charge transfer between the monolayers following the optical excitation. Thus, confirming TMDs alloys can be used to tune the band-offsets, which adds another design parameter for application-specific optoelectronic devices.
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Affiliation(s)
- Mohammed Adel Aly
- Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, 35032 Marburg, Germany
- Department of Physics, Faculty of Science, Ain Shams University, Cairo 11566, Egypt
| | | | - Martin Koch
- Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, 35032 Marburg, Germany
| | - Hilary Masenda
- Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, 35032 Marburg, Germany
- School of Physics, University of the Witwatersrand, Johannesburg 2050, South Africa
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6
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Pang L, Wang R, Zhao Q, Zhao M, Jiang L, Zhang X, Wu R, Lv Y, Liu W. InSb-based saturable absorbers for ultrafast photonic applications. NANOSCALE 2023. [PMID: 37470403 DOI: 10.1039/d3nr01416a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/21/2023]
Abstract
Sb-related III-V compounds have recently gained great research interest owing to their excellent optical and electrical characteristics, which provide many possibilities in photonics and electronics. This study investigated the application of InSb films in ultrafast photonics. An InSb film was fabricated on the tapered zone of a microfiber, and its saturation intensity, modulation depth, and non-saturable loss were determined as 119.8 MW cm-2, 23.5%, and 27.3%, respectively. The structure of the electronic band and density of states of InSb were theoretically calculated. Notably, mode-locked and Q-switched fiber lasers were realised by incorporating the InSb-microfiber device into two different Er-doped fiber cavities. In the Q-switching state, the narrowest pulse duration was measured as 1.756 μs with a maximum single-pulse energy of 221.95 nJ and a signal-to-noise ratio of 60 dB. In the mode-locking operation, ultrafast lasers with a high signal-to-noise ratio (70 dB), a pulse width as narrow as 265 fs and a repetition rate of 49.51 MHz were acquired. Besides, the second-harmonic mode-locked state was built with an output power of 13.22 mW. In comparison with the reported laser performance with 2D materials as saturable absorbers, the InSb-based mode-locked and Q-switched fiber lasers proposed herein exhibit better comprehensive performance.
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Affiliation(s)
- Lihui Pang
- Shaanxi Provincial Center for Regenerative Medicine and Surgical Engineering, First Affiliated Hospital, Xi'an Jiaotong University, Xi'an 710061, China.
- National Local Joint Engineering Research Center of Precise Surgery & Regenerative Medicine, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an 710061, China
| | - Rongfeng Wang
- Shaanxi Provincial Center for Regenerative Medicine and Surgical Engineering, First Affiliated Hospital, Xi'an Jiaotong University, Xi'an 710061, China.
- National Local Joint Engineering Research Center of Precise Surgery & Regenerative Medicine, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an 710061, China
| | - Qiyi Zhao
- School of Science, Xi'an University of Posts and Telecommunications, Xi'an 710121, China
| | - Meng Zhao
- Shaanxi Provincial Center for Regenerative Medicine and Surgical Engineering, First Affiliated Hospital, Xi'an Jiaotong University, Xi'an 710061, China.
- National Local Joint Engineering Research Center of Precise Surgery & Regenerative Medicine, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an 710061, China
| | - Le Jiang
- Shaanxi Provincial Center for Regenerative Medicine and Surgical Engineering, First Affiliated Hospital, Xi'an Jiaotong University, Xi'an 710061, China.
- National Local Joint Engineering Research Center of Precise Surgery & Regenerative Medicine, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an 710061, China
| | - Xiaogang Zhang
- Shaanxi Provincial Center for Regenerative Medicine and Surgical Engineering, First Affiliated Hospital, Xi'an Jiaotong University, Xi'an 710061, China.
| | - Rongqian Wu
- Shaanxi Provincial Center for Regenerative Medicine and Surgical Engineering, First Affiliated Hospital, Xi'an Jiaotong University, Xi'an 710061, China.
- National Local Joint Engineering Research Center of Precise Surgery & Regenerative Medicine, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an 710061, China
| | - Yi Lv
- Shaanxi Provincial Center for Regenerative Medicine and Surgical Engineering, First Affiliated Hospital, Xi'an Jiaotong University, Xi'an 710061, China.
- National Local Joint Engineering Research Center of Precise Surgery & Regenerative Medicine, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an 710061, China
| | - Wenjun Liu
- State Key Laboratory of Information Photonics and Optical Communications, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China.
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Azam N, Mahjouri-Samani M. Time-Resolved Growth of 2D WSe 2 Monolayer Crystals. ACS NANO 2023. [PMID: 37339265 DOI: 10.1021/acsnano.3c02280] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/22/2023]
Abstract
Understanding and controlling the growth evolution of atomically thin monolayer two-dimensional (2D) materials such as transition metal dichalcogenides (TMDCs) are vital for next-generation 2D electronics and optoelectronic devices. However, their growth kinetics are not fully observed or well understood due to the bottlenecks associated with the existing synthesis methods. This study demonstrates the time-resolved and ultrafast growth of 2D materials by a laser-based synthesis approach that enables the rapid initiation and termination of the vaporization process during crystal growth. The use of stoichiometric powder (e.g., WSe2) minimizes the complex chemistry during the vaporization and growth process, allowing rapid initiation/termination control over the generated flux. An extensive set of experiments is performed to understand the growth evolution, achieving subsecond growth as low as 10 ms along with a 100 μm/s growth rate on a noncatalytic substrate such as Si/SiO2. Overall, this study allows us to observe and understand the 2D crystal evolution and growth kinetics with time-resolved and subsecond time scales.
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Affiliation(s)
- Nurul Azam
- Electrical and Computer Engineering Department, Auburn University, Auburn, Alabama 36849, United States
| | - Masoud Mahjouri-Samani
- Electrical and Computer Engineering Department, Auburn University, Auburn, Alabama 36849, United States
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Wu X, Luo X, Cheng H, Yang R, Chen X. Recent progresses on ion beam irradiation induced structure and performance modulation of two-dimensional materials. NANOSCALE 2023; 15:8925-8947. [PMID: 37102719 DOI: 10.1039/d3nr01366a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Two-dimensional (2D) materials are receiving significant attention for both fundamental research and industrial applications due to their unparalleled properties and wide application potential. In this case, the controllable modulation of their structures and properties is essential for the realization and further expansion of their applications. Accordingly, ion beam irradiation techniques, with large scope to adjust parameters, high manufacturing resolution, and a series of advanced equipment being developed, have been demonstrated to have obvious advantages in manipulating the structure and performance of 2D materials. In recent years, many research efforts have been devoted to uncovering the underlying mechanism and control rules regarding ion irradiation induced phenomena in 2D materials, aiming at fulfilling their application potential as soon as possible. Herein, we review the research progress in the interaction between energetic ions and 2D materials based on the energy transfer model, type of ion source, structural modulation, performance modification of 2D materials, and then their application status, aiming to provide useful information for researchers in this field and stimulating more research advances.
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Affiliation(s)
- Xin Wu
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong 519082, China.
| | - Xinchun Luo
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong 519082, China.
| | - Hailong Cheng
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong 519082, China.
| | - Ruxue Yang
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong 519082, China.
| | - Xiyue Chen
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong 519082, China.
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9
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Zhang L, Wang N, Li Y. Design, synthesis, and application of some two-dimensional materials. Chem Sci 2023; 14:5266-5290. [PMID: 37234883 PMCID: PMC10208047 DOI: 10.1039/d3sc00487b] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/29/2023] [Accepted: 04/18/2023] [Indexed: 05/28/2023] Open
Abstract
Two-dimensional (2D) materials are widely used as key components in the fields of energy conversion and storage, optoelectronics, catalysis, biomedicine, etc. To meet the practical needs, molecular structure design and aggregation process optimization have been systematically carried out. The intrinsic correlation between preparation methods and the characteristic properties is investigated. This review summarizes the recent research achievements of 2D materials in the aspect of molecular structure modification, aggregation regulation, characteristic properties, and device applications. The design strategies to fabricate functional 2D materials starting from precursor molecules are introduced in detail referring to organic synthetic chemistry and self-assembly technology. It provides important research ideas for the design and synthesis of related materials.
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Affiliation(s)
- Luwei Zhang
- Shandong Provincial Key Laboratory for Science of Material Creation and Energy Conversion, Science Center for Material Creation and Energy Conversion, School of Chemistry and Chemical Engineering, Shandong University 27 Shanda Nanlu Jinan 250100 P. R. China
| | - Ning Wang
- Shandong Provincial Key Laboratory for Science of Material Creation and Energy Conversion, Science Center for Material Creation and Energy Conversion, School of Chemistry and Chemical Engineering, Shandong University 27 Shanda Nanlu Jinan 250100 P. R. China
| | - Yuliang Li
- Shandong Provincial Key Laboratory for Science of Material Creation and Energy Conversion, Science Center for Material Creation and Energy Conversion, School of Chemistry and Chemical Engineering, Shandong University 27 Shanda Nanlu Jinan 250100 P. R. China
- Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences Zhongguancun North First Street 2 Beijing 100190 P. R. China
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10
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Enrico A, Hartwig O, Dominik N, Quellmalz A, Gylfason KB, Duesberg GS, Niklaus F, Stemme G. Ultrafast and Resist-Free Nanopatterning of 2D Materials by Femtosecond Laser Irradiation. ACS NANO 2023; 17:8041-8052. [PMID: 37074334 PMCID: PMC10173691 DOI: 10.1021/acsnano.2c09501] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
The performance of two-dimensional (2D) materials is promising for electronic, photonic, and sensing devices since they possess large surface-to-volume ratios, high mechanical strength, and broadband light sensitivity. While significant advances have been made in synthesizing and transferring 2D materials onto different substrates, there is still the need for scalable patterning of 2D materials with nanoscale precision. Conventional lithography methods require protective layers such as resist or metals that can contaminate or degrade the 2D materials and deteriorate the final device performance. Current resist-free patterning methods are limited in throughput and typically require custom-made equipment. To address these limitations, we demonstrate the noncontact and resist-free patterning of platinum diselenide (PtSe2), molybdenum disulfide (MoS2), and graphene layers with nanoscale precision at high processing speed while preserving the integrity of the surrounding material. We use a commercial, off-the-shelf two-photon 3D printer to directly write patterns in the 2D materials with features down to 100 nm at a maximum writing speed of 50 mm/s. We successfully remove a continuous film of 2D material from a 200 μm × 200 μm substrate area in less than 3 s. Since two-photon 3D printers are becoming increasingly available in research laboratories and industrial facilities, we expect this method to enable fast prototyping of devices based on 2D materials across various research areas.
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Affiliation(s)
- Alessandro Enrico
- Division of Micro and Nanosystems, KTH Royal Institute of Technology, Malvinas väg 10, 10044 Stockholm, Sweden
| | - Oliver Hartwig
- Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich & SENS Research Center, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany
| | - Nikolas Dominik
- Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich & SENS Research Center, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany
| | - Arne Quellmalz
- Division of Micro and Nanosystems, KTH Royal Institute of Technology, Malvinas väg 10, 10044 Stockholm, Sweden
| | - Kristinn B Gylfason
- Division of Micro and Nanosystems, KTH Royal Institute of Technology, Malvinas väg 10, 10044 Stockholm, Sweden
| | - Georg S Duesberg
- Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich & SENS Research Center, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany
| | - Frank Niklaus
- Division of Micro and Nanosystems, KTH Royal Institute of Technology, Malvinas väg 10, 10044 Stockholm, Sweden
| | - Göran Stemme
- Division of Micro and Nanosystems, KTH Royal Institute of Technology, Malvinas väg 10, 10044 Stockholm, Sweden
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Khan U, Nairan A, Khan K, Li S, Liu B, Gao J. Salt-Assisted Low-Temperature Growth of 2D Bi 2 O 2 Se with Controlled Thickness for Electronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206648. [PMID: 36538737 DOI: 10.1002/smll.202206648] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
Bi2 O2 Se is the most promising 2D material due to its semiconducting feature and high mobility, making it propitious channel material for high-performance electronics that demands highly crystalline Bi2 O2 Se at low-growth temperature. Here, a low-temperature salt-assisted chemical vapor deposition approach for growing single-domain Bi2 O2 Se on a millimeter scale with thicknesses of multilayer to monolayer is presented. Because of the advantage of thickness-dependent growth, systematical scrutiny of layer-dependent Raman spectroscopy of Bi2 O2 Se from monolayer to bulk is investigated, revealing a redshift of the A1g mode at 162.4 cm-1 . Moreover, the long-term environmental stability of ≈2.4 nm thick Bi2 O2 Se is confirmed after exposing the sample for 1.5 years to air. The backgated field effect transistor (FET) based on a few-layered Bi2 O2 Se flake represents decent carrier mobility (≈287 cm2 V-1 s-1 ) and an ON/OFF ratio of up to 107 . This report indicates a technique to grow large-domain thickness controlled Bi2 O2 Se single crystals for electronics.
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Affiliation(s)
- Usman Khan
- Institute of Functional Porous Materials, School of Materials Science and Engineering, Zhejiang Sci-Tech University, Hangzhou, 310018, P. R. China
- Zhejiang Provincial Innovation Center of Advanced Textile Technology, Shaoxing, 312000, P. R. China
| | - Adeela Nairan
- Institute of Functional Porous Materials, School of Materials Science and Engineering, Zhejiang Sci-Tech University, Hangzhou, 310018, P. R. China
- Zhejiang Provincial Innovation Center of Advanced Textile Technology, Shaoxing, 312000, P. R. China
| | - Karim Khan
- School of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan, 523808, P. R. China
| | - Sean Li
- School of Materials Science and Engineering, The University of New South Wales, Sydney, 2052, Australia
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Junkuo Gao
- Institute of Functional Porous Materials, School of Materials Science and Engineering, Zhejiang Sci-Tech University, Hangzhou, 310018, P. R. China
- Zhejiang Provincial Innovation Center of Advanced Textile Technology, Shaoxing, 312000, P. R. China
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12
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Han XC, Wang Q, Chen ZD, Zhou H, Cai Q, Han DD. Laser-reduced graphene oxide for a flexible liquid sliding sensing surface. OPTICS LETTERS 2023; 48:839-842. [PMID: 36723602 DOI: 10.1364/ol.482397] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2022] [Accepted: 12/29/2022] [Indexed: 06/18/2023]
Abstract
Flexible electronic skin is a flexible sensor system that imitates human skin. Recently, flexible sensors have been successfully developed. However, the droplet sliding sensing technology on a flexible electronic skin surface is still challenging. In this Letter, a flexible droplet sliding sensing surface is proposed and fabricated by laser-reduced graphene oxide (LRGO). The LRGO shows porous structures and low surface energy, which are beneficial for infusing lubricants and fabricating stable slippery surfaces. The slippery surface guarantees free sliding of droplets. The droplet sliding sensing mechanism is a combination of triboelectricity and electrostatic induction. After a NaCl droplet slides from lubricant-infused LRGO, a potential difference (∼0.2 mV) can be measured between two Ag electrodes. This study reveals considerable potential applications in intelligent robots and the medical field.
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13
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Pang L, Zhao M, Zhao Q, Li L, Wang R, Wu R, Lv Y, Liu W. GaSb Film is a Saturable Absorber for Dissipative Soliton Generation in a Fiber Laser. ACS APPLIED MATERIALS & INTERFACES 2022; 14:55971-55978. [PMID: 36493314 DOI: 10.1021/acsami.2c17738] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Nanotechnology is at the forefront of scientific research and offers great prospects for the development of technology. As a type of III-V semiconductor, GaSb materials exhibit numerous outstanding optical and electrical characteristics that are very promising for nonlinear optical device applications. In this study, the electronic band structures of GaSb are theoretically calculated, and its application in dissipative soliton fiber lasers is validated. A GaSb thin film is deposited on a microfiber using magnetron sputtering deposition, and the morphology, chemical composition, structure, and nonlinear optical characteristics of the proposed microfiber-GaSb device are investigated. After incorporating it into an Er-doped fiber laser, dissipative soliton laser pulses are readily obtained with a fundamental frequency of 43.5 MHz. With increasing pump power, the fiber laser could work in the fundamental frequency mode-locking state. At a pump power of 570 mW, the pulse width and the output power are measured to be 917 fs and 49.75 mW, separately. These results reveal that GaSb can be used as an efficient saturable absorber, which will have potential applications in ultrafast optics.
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Affiliation(s)
- Lihui Pang
- Shaanxi Provincial Center for Regenerative Medicine and Surgical Engineering, First Affiliated Hospital, Xi'an Jiaotong University, Xi'an710061, China
- National Local Joint Engineering Research Center of Precise Surgery & Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an710061, China
| | - Meng Zhao
- Shaanxi Provincial Center for Regenerative Medicine and Surgical Engineering, First Affiliated Hospital, Xi'an Jiaotong University, Xi'an710061, China
- National Local Joint Engineering Research Center of Precise Surgery & Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an710061, China
| | - Qiyi Zhao
- School of Science, Xi'an University of Posts and Telecommunications, Xi'an710121, China
| | - Lu Li
- School of Science, Xi'an University of Posts and Telecommunications, Xi'an710121, China
| | - Rongfeng Wang
- Shaanxi Provincial Center for Regenerative Medicine and Surgical Engineering, First Affiliated Hospital, Xi'an Jiaotong University, Xi'an710061, China
- National Local Joint Engineering Research Center of Precise Surgery & Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an710061, China
| | - Rongqian Wu
- Shaanxi Provincial Center for Regenerative Medicine and Surgical Engineering, First Affiliated Hospital, Xi'an Jiaotong University, Xi'an710061, China
- National Local Joint Engineering Research Center of Precise Surgery & Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an710061, China
| | - Yi Lv
- Shaanxi Provincial Center for Regenerative Medicine and Surgical Engineering, First Affiliated Hospital, Xi'an Jiaotong University, Xi'an710061, China
- National Local Joint Engineering Research Center of Precise Surgery & Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an710061, China
| | - Wenjun Liu
- State Key Laboratory of Information Photonics and Optical Communications, School of Science, Beijing University of Posts and Telecommunications, Beijing100876, China
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14
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Sun J, Xiao X, Zhang Y, Cao W, Wang N, Gu L. Universal Method to Synergistically Exfoliate and Functionalize Boron Nitride Nanosheets with a Large Yield and High Concentration. Ind Eng Chem Res 2022. [DOI: 10.1021/acs.iecr.2c01263] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/28/2023]
Affiliation(s)
- Jiulong Sun
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai 519082, China
| | - Xinzhe Xiao
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai 519082, China
| | - Yumin Zhang
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai 519082, China
| | - Wanwan Cao
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai 519082, China
| | - Ning Wang
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen 518100, China
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Lin Gu
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai 519082, China
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