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Lin Y, Yang W, Gu H, Du F, Liao J, Yu D, Xia J, Wang H, Yang S, Fang G, Liang C. Transparent Recombination Layers Design and Rational Characterizations for Efficient Two-Terminal Perovskite-Based Tandem Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2405684. [PMID: 38769911 DOI: 10.1002/adma.202405684] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2024] [Revised: 05/12/2024] [Indexed: 05/22/2024]
Abstract
Two-terminal (2T) perovskite-based tandem solar cells (TSCs) arouse burgeoning interest in breaking the Shockley-Queisser (S-Q) limit of single-junction solar cells by combining two subcells with different bandgaps. However, the highest certified efficiency of 2T perovskite-based TSCs (33.9%) lags behind the theoretical limit (42-43%). A vital challenge limiting the development of 2T perovskite-based TSCs is the transparent recombination layers/interconnecting layers (RLs) design between two subcells. To improve the performance of 2T perovskite-based TSCs, RLs simultaneously fulfill the optical loss, contact resistance, carrier mobility, stress management, and conformal coverage requirements. In this review, the definition, functions, and requirements of RLs in 2T perovskite-based TSCs are presented. The insightful characterization methods applicable to RLs, which are inspiring for further research on the RLs both in 2T perovskite-based two-junction and multi-junction TSCs, are also highlighted. Finally, the key factors that currently limit the performance enhancement of RLs and the future directions that should be continuously focused on are summarized.
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Affiliation(s)
- Yuexin Lin
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Wenhan Yang
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Hao Gu
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau, 999078, P. R. China
| | - Fenqi Du
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Jinfeng Liao
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau, 999078, P. R. China
| | - Dejian Yu
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau, 999078, P. R. China
| | - Junmin Xia
- State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing, 210023, P. R. China
| | - Haibin Wang
- Institute of Advanced Ceramics, Henan Academy of Sciences, Zhengzhou, 450046, P. R. China
| | - Shengchun Yang
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Guojia Fang
- Key Laboratory of Artificial Micro/Nano Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Chao Liang
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
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Yang L, Fang Z, Jin Y, Feng H, Deng B, Zheng L, Xu P, Chen J, Chen X, Zhou Y, Shi C, Gao W, Yang J, Xu X, Tian C, Xie L, Wei Z. Suppressing Halide Segregation via Pyridine-Derivative Isomers Enables Efficient 1.68 eV Bandgap Perovskite Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311923. [PMID: 38400811 DOI: 10.1002/adma.202311923] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2023] [Revised: 01/29/2024] [Indexed: 02/26/2024]
Abstract
Light-induced phase segregation is one of the main issues restricting the efficiency and stability of wide-bandgap perovskite solar cells (WBG PSCs). Small organic molecules with abundant functional groups can passivate various defects, and therefore suppress the ionic migration channels for phase segregation. Herein, a series of pyridine-derivative isomers containing amino and carboxyl are applied to modify the perovskite surface. The amino, carboxyl, and N-terminal of pyridine in all of these molecules can interact with undercoordinated Pb2+ through coordination bonds and suppress halide ions migration via hydrogen bonding. Among them, the 5-amino-3-pyridine carboxyl acid (APA-3) treated devices win the champion performance, enabling an efficiency of 22.35% (certified 22.17%) using the 1.68 eV perovskite, which represents one of the highest values for WBG-PSCs. This is believed to be due to the more symmetric spatial distribution of the three functional groups of APA-3, which provides a better passivation effect independent of the molecular arrangement orientation. Therefore, the APA-3 passivated perovskite shows the slightest halide segregation, the lowest defect density, and the least nonradiative recombination. Moreover, the APA-3 passivated device retains 90% of the initial efficiency after 985 h of operation at the maximum power point, representing the robust durability of WBG-PSCs under working conditions.
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Affiliation(s)
- Liu Yang
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Zheng Fang
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
- MOE Engineering Research Center for Brittle Materials Machining, Institute of Manufacturing Engineering, College of Mechanical Engineering and Automation, Huaqiao University, Xiamen, 361021, China
| | - Yongbin Jin
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Huiping Feng
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Bingru Deng
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Lingfang Zheng
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Peng Xu
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Jingfu Chen
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Xueling Chen
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Yangying Zhou
- China Huaneng Clean Energy Research Institute, Beijing, 102209, China
| | - Congbo Shi
- China Huaneng Clean Energy Research Institute, Beijing, 102209, China
| | - Wei Gao
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Jinxin Yang
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Xipeng Xu
- MOE Engineering Research Center for Brittle Materials Machining, Institute of Manufacturing Engineering, College of Mechanical Engineering and Automation, Huaqiao University, Xiamen, 361021, China
| | - Chengbo Tian
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Liqiang Xie
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Zhanhua Wei
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
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Sun H, Liu S, Liu X, Gao Y, Wang J, Shi C, Raza H, Sun Z, Pan Y, Cai Y, Zhang S, Sun D, Chen W, Liu Z. Suppressed Phase Segregation with Small A-Site and Large X-Site Incorporation for Photostable Wide-Bandgap Perovskite Solar Cells. SMALL METHODS 2024:e2400067. [PMID: 38494754 DOI: 10.1002/smtd.202400067] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/14/2024] [Revised: 03/01/2024] [Indexed: 03/19/2024]
Abstract
Wide-bandgap (WBG) perovskite solar cells (PSCs) have been widely used as the top cell of tandem solar cells. However, photoinduced phase segregation and high open-circuit voltage loss pose significant obstacles to the development of WBG PSCs. Here, a two-step small-size A-site and large-size X-site incorporation strategy is reported to modulate the lattice distortion and improve the film quality of WBG formamidinium-methylammonium (FAMA) perovskite films for photostable PSCs based on two-step deposition method. First, CsI with content of 0-20% is introduced to tune the lattice distortion and film quality of FAMA perovskite with a bandgap of 1.70 eV. Then, 4% RbI is incorporated to further modulate the perovskite growth and lattice distortion, leading to the suppression of photoinduced phase segregation in the resultant RbCsFAMA quadruple cation perovskites. As a result, the 20%CsI/4%RbI-doped device obtains a promising efficiency of 20.6%, and the corresponding perovskite film shows good photothermal stability. Even without encapsulation, the device can maintain 92% of its initial efficiency after 1000 h of continuous operation under 1 sun equivalent white light-emitting diode illumination.
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Affiliation(s)
- Huande Sun
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Sanwan Liu
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Xiaoxuan Liu
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - You Gao
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Jianan Wang
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Chenyang Shi
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Hasan Raza
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Zhenxing Sun
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Yongyan Pan
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Yong Cai
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Siqi Zhang
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Derun Sun
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Wei Chen
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
- Optics Valley Laboratory, Hubei, 430074, China
| | - Zonghao Liu
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
- Optics Valley Laboratory, Hubei, 430074, China
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Chen Q, Zhou L, Zhang J, Chen D, Zhu W, Xi H, Zhang J, Zhang C, Hao Y. Recent Progress of Wide Bandgap Perovskites towards Two-Terminal Perovskite/Silicon Tandem Solar Cells. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:202. [PMID: 38251165 PMCID: PMC10820607 DOI: 10.3390/nano14020202] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2023] [Revised: 01/09/2024] [Accepted: 01/11/2024] [Indexed: 01/23/2024]
Abstract
Perovskite/silicon tandem solar cells have garnered considerable interest due to their potential to surpass the Shockley-Queisser limit of single-junction Si solar cells. The rapidly advanced efficiencies of perovskite/silicon tandem solar cells benefit from the significant improvements in perovskite technology. Beginning with the evolution of wide bandgap perovskite cells towards two-terminal (2T) perovskite/silicon tandem solar cells, this work concentrates on component engineering, additives, and interface modification of wide bandgap perovskite cells. Furthermore, the advancements in 2T perovskite/silicon tandem solar cells are presented, and the influence of the central interconnect layer and the Si cell on the progression of the tandem solar cells is emphasized. Finally, we discuss the challenges and obstacles associated with 2T perovskite/silicon tandem solar cells, conducting a thorough analysis and providing a prospect for their future.
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Affiliation(s)
- Qianyu Chen
- National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology and Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an 710071, China
| | - Long Zhou
- National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology and Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an 710071, China
- Xi’an Baoxin Solar Technology Co., Ltd., Xi’an 710071, China
| | - Jiaojiao Zhang
- National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology and Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an 710071, China
| | - Dazheng Chen
- National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology and Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an 710071, China
- Xi’an Baoxin Solar Technology Co., Ltd., Xi’an 710071, China
| | - Weidong Zhu
- National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology and Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an 710071, China
- Xi’an Baoxin Solar Technology Co., Ltd., Xi’an 710071, China
| | - He Xi
- National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology and Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an 710071, China
- Xi’an Baoxin Solar Technology Co., Ltd., Xi’an 710071, China
| | - Jincheng Zhang
- National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology and Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an 710071, China
| | - Chunfu Zhang
- National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology and Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an 710071, China
- Xi’an Baoxin Solar Technology Co., Ltd., Xi’an 710071, China
| | - Yue Hao
- National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology and Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an 710071, China
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Niu X, Li N, Cui Z, Li L, Pei F, Lan Y, Song Q, Du Y, Dou J, Bao Z, Wang L, Liu H, Li K, Zhang X, Huang Z, Wang L, Zhou W, Yuan G, Chen Y, Zhou H, Zhu C, Liu G, Bai Y, Chen Q. Anion Confinement for Homogeneous Mixed Halide Perovskite Film Growth by Electrospray. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2305822. [PMID: 37565713 DOI: 10.1002/adma.202305822] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2023] [Revised: 08/01/2023] [Indexed: 08/12/2023]
Abstract
Wide-bandgap perovskites are promising absorbers for state-of-the-art tandem solar cells to feasibly surpass Shockley-Queisser limit with low cost. However, the commonly used mixed halide perovskites suffer from poor stability; particularly, photoinduced phase segregation. Electrospray deposition is developed to bridge the gap of growth rate between iodide and bromide components during film growth by spatially confining the anion diffusion and eliminating the kinetic difference, which universally improves the initial homogeneity of perovskite films regardless of device architectures. It thus promotes the efficiency and stability of corresponding solar cells based on wide-bandgap (1.68 eV) absorbers. Remarkable power conversion efficiencies (PCEs) of 21.44% and 20.77% are achieved in 0.08 cm2 and 1.0 cm2 devices, respectively. In addition, these devices maintain 90% of their initial PCE after 1550 h of stabilized power output (SPO) tracking upon one sun irradiation (LED) at room temperature.
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Affiliation(s)
- Xiuxiu Niu
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Nengxu Li
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Zhenhua Cui
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Liang Li
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Fengtao Pei
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Yisha Lan
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Qizhen Song
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Yujiang Du
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Jing Dou
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Zhaoboxun Bao
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Lina Wang
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Huifen Liu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Kailin Li
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Xinran Zhang
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Zijian Huang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Lan Wang
- School of Internet of Things Engineering, Jiangnan University, Wuxi, Jiangsu, 214122, China
| | - Wentao Zhou
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Guizhou Yuan
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Yihua Chen
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Huanping Zhou
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Cheng Zhu
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Guilin Liu
- School of Science, Jiangnan University, Wuxi, Jiangsu, 214122, China
| | - Yang Bai
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Qi Chen
- Experimental Centre for Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
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Wang X, Zhang M, Hou T, Sun X, Hao X. Extrinsic Interstitial Ions in Metal Halide Perovskites: A Review. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2303060. [PMID: 37452440 DOI: 10.1002/smll.202303060] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2023] [Revised: 06/19/2023] [Indexed: 07/18/2023]
Abstract
Perovskite solar cells have rapidly developed as a promising technology for the next generation of low-cost photovoltaics, receiving enormous attention from researchers and industries. Compared to traditional semiconducting materials, metal halide perovskite exhibits outstanding tolerance to extrinsic ions. At a certain range of doping concentration, the interstitial occupancy of extrinsic ions provides appealing benefits to the perovskite films, contributing to higher performance and stability of the devices. This review summarizes the research progress of interstitial ions for metal halide perovskite, providing insights into the mechanism and identification of interstitial doping of extrinsic ions, covering the benefits of interstitial ions in regulating crystal growth, inhibiting ion migration, and reducing defect density. Finally, based on the latest progress and findings, further topics and directions of research on interstitial ions in metal halide perovskite are proposed to advance the understanding of interstitial ions in perovskite and promote the development of perovskite photovoltaic technology.
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Affiliation(s)
- Xin Wang
- School of New Energy and Materials, Southwest Petroleum University, Chengdu, 610500, China
| | - Meng Zhang
- School of New Energy and Materials, Southwest Petroleum University, Chengdu, 610500, China
- The Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Tian Hou
- School of New Energy and Materials, Southwest Petroleum University, Chengdu, 610500, China
| | - Xiaoran Sun
- School of New Energy and Materials, Southwest Petroleum University, Chengdu, 610500, China
| | - Xiaojing Hao
- The Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
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Ahmad M, Cartledge C, McAndrews G, Giuri A, McGehee MD, Rizzo A, Rolston N. Tuning Film Stresses for Open-Air Processing of Stable Metal Halide Perovskites. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37903284 DOI: 10.1021/acsami.3c11151] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/01/2023]
Abstract
Challenges to upscaling metal halide perovskites (MHPs) include mechanical film stresses that accelerate degradation, dominate at the module scale, and can lead to delamination or fracture. In this work, we demonstrate open-air blade coating of single-step coated perovskite as a scalable method to control residual film stress after processing and introduce beneficial compression in the thin film with the use of polymer additives such as gellan gum and corn starch. The optoelectronic properties of MHP films with compression are improved with higher photoluminescence yields. MHP film stability is significantly improved under compression, under humidity, heat, and thermal cycling. By measuring the evolution of film stresses, we demonstrate for the first time that stress relaxation occurs in MHP films with tensile stress that correlates with film degradation. This discovery of a new mechanism underpinning MHP degradation shows that film stress can be used as a parameter to screen MHP devices and modules for quality control before deployment as a design for reliability criterion.
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Affiliation(s)
- Muneeza Ahmad
- Arizona State University, Tempe, Arizona 85281, United States
| | | | - Gabriel McAndrews
- Materials Science and Engineering, University of Colorado, Boulder, Colorado 80309, United States
| | - Antonella Giuri
- CNR NANOTEC - Institute of Nanotechnology c/o Campus Ecotekne, University of Salento, via Monteroni, I-73100 Lecce, Italy
| | - Michael D McGehee
- Materials Science and Engineering, University of Colorado, Boulder, Colorado 80309, United States
| | - Aurora Rizzo
- CNR NANOTEC - Institute of Nanotechnology c/o Campus Ecotekne, University of Salento, via Monteroni, I-73100 Lecce, Italy
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Guo J, Meng G, Zhang X, Huang H, Shi J, Wang B, Hu X, Yuan J, Ma W. Dual-Interface Modulation with Covalent Organic Framework Enables Efficient and Durable Perovskite Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2302839. [PMID: 37391877 DOI: 10.1002/adma.202302839] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2023] [Revised: 06/22/2023] [Accepted: 06/29/2023] [Indexed: 07/02/2023]
Abstract
Dual-interface modulation including buried interface as well as the top surface has recently been proven to be crucial for obtaining high photovoltaic performance in lead halide perovskite solar cells (PSCs). Herein, for the first time, the strategy of using functional covalent organic frameworks (COFs), namely HS-COFs for dual-interface modulation, is reported to further understand its intrinsic mechanisms in optimizing the bottom and top surfaces. Specifically, the buried HS-COFs layer can enhance the resistance against ultraviolet radiation, and more importantly, release the tensile strain, which is beneficial for enhancing device stability and improving the order of perovskite crystal growth. Furthermore, the detailed characterization results reveal that the HS-COFs on the top surface can effectively passivate the surface defects and suppress non-radiation recombination, as well as optimize the crystallization and growth of the perovskite film. Benefiting from the synergistic effects, the dual-interface modified devices deliver champion efficiencies of 24.26% and 21.30% for 0.0725 cm2 and 1 cm2 -sized devices, respectively. Moreover, they retain 88% and 84% of their initial efficiencies after aging for 2000 h under the ambient conditions (25 °C, relative humidity: 35-45%) and a nitrogen atmosphere with heating at 65 °C, respectively.
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Affiliation(s)
- Junjun Guo
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 199 Ren-Ai Road, Suzhou Industrial Park, Suzhou, Jiangsu, 215123, P. R. China
| | - Genping Meng
- State Key Laboratory of Applied Organic Chemistry, Key Laboratory of Nonferrous Metal Chemistry and Resources Utilization of Gansu Province, Lanzhou University, Lanzhou, Gansu, 730000, P. R. China
| | - Xuliang Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 199 Ren-Ai Road, Suzhou Industrial Park, Suzhou, Jiangsu, 215123, P. R. China
| | - Hehe Huang
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 199 Ren-Ai Road, Suzhou Industrial Park, Suzhou, Jiangsu, 215123, P. R. China
| | - Junwei Shi
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Baodui Wang
- State Key Laboratory of Applied Organic Chemistry, Key Laboratory of Nonferrous Metal Chemistry and Resources Utilization of Gansu Province, Lanzhou University, Lanzhou, Gansu, 730000, P. R. China
| | - Xiaotian Hu
- College of Chemistry and Chemical Engineering/Institute of Polymers and Energy Chemistry, Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, P. R. China
| | - Jianyu Yuan
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 199 Ren-Ai Road, Suzhou Industrial Park, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Wanli Ma
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 199 Ren-Ai Road, Suzhou Industrial Park, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
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9
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Guo H, Fang Y, Lei Y, Wu J, Li M, Li X, Cheng HB, Lin Y, Dyson PJ. Mitigating Ion Migration with an Ultrathin Self-Assembled Ionic Insulating Layer Affords Efficient and Stable Wide-Bandgap Inverted Perovskite Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302021. [PMID: 37222112 DOI: 10.1002/smll.202302021] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/14/2023] [Revised: 04/21/2023] [Indexed: 05/25/2023]
Abstract
Wide-bandgap perovskite solar cells (PSCs) are attracting increasing attention because they play an irreplaceable role in tandem solar cells. Nevertheless, wide-bandgap PSCs suffer large open-circuit voltage (VOC ) loss and instability due to photoinduced halide segregation, significantly limiting their application. Herein, a bile salt (sodium glycochenodeoxycholate, GCDC, a natural product), is used to construct an ultrathin self-assembled ionic insulating layer firmly coating the perovskite film, which suppresses halide phase separation, reduces VOC loss, and improves device stability. As a result, 1.68 eV wide-bandgap devices with an inverted structure deliver a VOC of 1.20 V with an efficiency of 20.38%. The unencapsulated GCDC-treated devices are considerably more stable than the control devices, retaining 92% of their initial efficiency after 1392 h storage under ambient conditions and retaining 93% after heating at 65 °C for 1128 h in an N2 atmosphere. This strategy of mitigating ion migration via anchoring a nonconductive layer provides a simple approach to achieving efficient and stable wide-bandgap PSCs.
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Affiliation(s)
- Haodan Guo
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, CAS Research / Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yanyan Fang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, CAS Research / Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
| | - Yan Lei
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, CAS Research / Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jinpeng Wu
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Minghua Li
- State Key Laboratory of Organic-Inorganic Composites, Beijing Laboratory of Biomedical Materials, College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, China
| | - Xiangrong Li
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, CAS Research / Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hong Bo Cheng
- State Key Laboratory of Organic-Inorganic Composites, Beijing Laboratory of Biomedical Materials, College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, China
| | - Yuan Lin
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, CAS Research / Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Paul J Dyson
- Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland
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10
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Zhou B, Xu S, Wu L, Li M, Chong Y, Qiu Y, Chen G, Zhao Y, Feng C, Ye D, Yan K. Strain-Engineering of Mesoporous Cs 3 Bi 2 Br 9 /BiVO 4 S-Scheme Heterojunction for Efficient CO 2 Photoreduction. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2302058. [PMID: 37183305 DOI: 10.1002/smll.202302058] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/10/2023] [Revised: 04/25/2023] [Indexed: 05/16/2023]
Abstract
Slow charge kinetics and unfavorable CO2 adsorption/activation strongly inhibit CO2 photoreduction. In this study, a strain-engineered Cs3 Bi2 Br9 /hierarchically porous BiVO4 (s-CBB/HP-BVO) heterojunction with improved charge separation and tailored CO2 adsorption/activation capability is developed. Density functional theory calculations suggest that the presence of tensile strain in Cs3 Bi2 Br9 can significantly downshift the p-band center of the active Bi atoms, which enhances the adsorption/activation of inert CO2 . Meanwhile, in situ irradiation X-ray photoelectron spectroscopy and electron spin resonance confirm that efficient charge transfer occurs in s-CBB/HP-BVO following an S-scheme with built-in electric field acceleration. Therefore, the well-designed s-CBB/HP-BVO heterojunction exhibits a boosted photocatalytic activity, with a total electron consumption rate of 70.63 µmol g-1 h-1 , and 79.66% selectivity of CO production. Additionally, in situ diffuse reflectance infrared Fourier transform spectroscopy reveals that CO2 photoreduction undergoes a formaldehyde-mediated reaction process. This work provides insight into strain engineering to improve the photocatalytic performance of halide perovskite.
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Affiliation(s)
- Biao Zhou
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, China
| | - Shuang Xu
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, China
| | - Liqin Wu
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, China
| | - Mingjie Li
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, China
| | - Yanan Chong
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, China
| | - Yongcai Qiu
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, China
| | - Guangxu Chen
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, China
| | - Yun Zhao
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, China
| | - Chunhua Feng
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, China
| | - Daiqi Ye
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, China
| | - Keyou Yan
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, China
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11
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Yang L, Jin Y, Fang Z, Zhang J, Nan Z, Zheng L, Zhuang H, Zeng Q, Liu K, Deng B, Feng H, Luo Y, Tian C, Cui C, Xie L, Xu X, Wei Z. Efficient Semi-Transparent Wide-Bandgap Perovskite Solar Cells Enabled by Pure-Chloride 2D-Perovskite Passivation. NANO-MICRO LETTERS 2023; 15:111. [PMID: 37121964 PMCID: PMC10149431 DOI: 10.1007/s40820-023-01090-w] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2023] [Accepted: 03/31/2023] [Indexed: 05/03/2023]
Abstract
Wide-bandgap (WBG) perovskite solar cells suffer from severe non-radiative recombination and exhibit relatively large open-circuit voltage (VOC) deficits, limiting their photovoltaic performance. Here, we address these issues by in-situ forming a well-defined 2D perovskite (PMA)2PbCl4 (phenmethylammonium is referred to as PMA) passivation layer on top of the WBG active layer. The 2D layer with highly pure dimensionality and halide components is realized by intentionally tailoring the side-chain substituent at the aryl ring of the post-treatment reagent. First-principle calculation and single-crystal X-ray diffraction results reveal that weak intermolecular interactions between bulky PMA cations and relatively low cation-halide hydrogen bonding strength are crucial in forming the well-defined 2D phase. The (PMA)2PbCl4 forms improved type-I energy level alignment with the WBG perovskite, reducing the electron recombination at the perovskite/hole-transport-layer interface. Applying this strategy in fabricating semi-transparent WBG perovskite solar cells (indium tin oxide as the back electrode), the VOC deficits can be reduced to 0.49 V, comparable with the reported state-of-the-art WBG perovskite solar cells using metal electrodes. Consequently, we obtain hysteresis-free 18.60%-efficient WBG perovskite solar cells with a high VOC of 1.23 V.
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Affiliation(s)
- Liu Yang
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, People's Republic of China
| | - Yongbin Jin
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, People's Republic of China
| | - Zheng Fang
- MOE Engineering Research Center for Brittle Materials Machining, Institute of Manufacturing Engineering, College of Mechanical Engineering and Automation, Huaqiao University, Xiamen, 361021, People's Republic of China
| | - Jinyan Zhang
- Gold Stone (Fujian) Energy Company Limited, Quanzhou, 362005, People's Republic of China
| | - Ziang Nan
- Collaborative Innovation Center of Chemistry for Energy Materials, Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, People's Republic of China
| | - Lingfang Zheng
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, People's Republic of China
| | - Huihu Zhuang
- Gold Stone (Fujian) Energy Company Limited, Quanzhou, 362005, People's Republic of China
| | - Qinghua Zeng
- Gold Stone (Fujian) Energy Company Limited, Quanzhou, 362005, People's Republic of China
| | - Kaikai Liu
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, People's Republic of China
| | - Bingru Deng
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, People's Republic of China
| | - Huiping Feng
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, People's Republic of China
| | - Yujie Luo
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, People's Republic of China
| | - Chengbo Tian
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, People's Republic of China
| | - Changcai Cui
- MOE Engineering Research Center for Brittle Materials Machining, Institute of Manufacturing Engineering, College of Mechanical Engineering and Automation, Huaqiao University, Xiamen, 361021, People's Republic of China
| | - Liqiang Xie
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, People's Republic of China.
| | - Xipeng Xu
- MOE Engineering Research Center for Brittle Materials Machining, Institute of Manufacturing Engineering, College of Mechanical Engineering and Automation, Huaqiao University, Xiamen, 361021, People's Republic of China.
| | - Zhanhua Wei
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, People's Republic of China.
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12
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Nie T, Fang Z, Ren X, Duan Y, Liu SF. Recent Advances in Wide-Bandgap Organic-Inorganic Halide Perovskite Solar Cells and Tandem Application. NANO-MICRO LETTERS 2023; 15:70. [PMID: 36943501 PMCID: PMC10030759 DOI: 10.1007/s40820-023-01040-6] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/03/2022] [Accepted: 01/28/2023] [Indexed: 06/18/2023]
Abstract
Perovskite-based tandem solar cells have attracted increasing interest because of its great potential to surpass the Shockley-Queisser limit set for single-junction solar cells. In the tandem architectures, the wide-bandgap (WBG) perovskites act as the front absorber to offer higher open-circuit voltage (VOC) for reduced thermalization losses. Taking advantage of tunable bandgap of the perovskite materials, the WBG perovskites can be easily obtained by substituting halide iodine with bromine, and substituting organic ions FA and MA with Cs. To date, the most concerned issues for the WBG perovskite solar cells (PSCs) are huge VOC deficit and severe photo-induced phase separation. Reducing VOC loss and improving photostability of the WBG PSCs are crucial for further efficiency breakthrough. Recently, scientists have made great efforts to overcome these key issues with tremendous progresses. In this review, we first summarize the recent progress of WBG perovskites from the aspects of compositions, additives, charge transport layers, interfaces and preparation methods. The key factors affecting efficiency and stability are then carefully discussed, which would provide decent guidance to develop highly efficient and stable WBG PSCs for tandem application.
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Affiliation(s)
- Ting Nie
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Zhimin Fang
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China.
| | - Xiaodong Ren
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Yuwei Duan
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Shengzhong Frank Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China.
- Dalian National Laboratory for Clean Energy, iChEM, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China.
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13
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Liu K, Wang Z, Qu S, Ding L. Stress and Strain in Perovskite/Silicon Tandem Solar Cells. NANO-MICRO LETTERS 2023; 15:59. [PMID: 36864215 PMCID: PMC9981842 DOI: 10.1007/s40820-023-01019-3] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2022] [Accepted: 01/31/2023] [Indexed: 05/30/2023]
Affiliation(s)
- Kong Liu
- Key Laboratory of Semiconductor Materials Science (CAS), Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.
| | - Zhijie Wang
- Key Laboratory of Semiconductor Materials Science (CAS), Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Shengchun Qu
- Key Laboratory of Semiconductor Materials Science (CAS), Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Liming Ding
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China.
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14
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Deng L, Li X, Rafique S, Wang Y, Wang Y, Liu K, Liu F, Pan Y, Yue X, Wang J, Tang J, Yang Y, Wang H, Shi Z, Li C, Qin Y, Yu A, Zhan Y. Strain Release and Defect Passivation in Formamidinium-Dominated Perovskite via a Novel in-Plane Thermal Gradient Assisted Crystallization Strategy. ACS APPLIED MATERIALS & INTERFACES 2022; 14:52007-52016. [PMID: 36349638 DOI: 10.1021/acsami.2c16247] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
It is essential to release annealing induced strain during the crystallization process to realize efficient and stable perovskite solar cells (PSCs), which does not seem achievable using the conventional annealing process. Here we report a novel and facile thermal gradient assisted crystallization strategy by simply introducing a slant angle between the preheated hot plate and the substrate. A distinct crystallization sequence resulted along the in-plane direction pointing from the hot side to the cool side, which effectively reduced the crystallization rate, controlled the perovskite grain growth, and released the in-plane tensile strain. Moreover, this strategy enabled uniform strain distribution in the vertical direction and assisted in reducing the defects and aligning the energy bands. The corresponding device demonstrated champion power conversion efficiencies (PCEs) of 23.70% and 21.04% on the rigid and flexible substrates, respectively. These highly stable rigid devices retained 97% of the initial PCE after 1097 h of storage and more than 80% of the initial PCE after 1000 h of continuous operation at the maximum power point. This novel strategy opens a simple and effective avenue to improve the quality of perovskite films and photovoltaic devices via strain modulation and defect passivation.
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Affiliation(s)
- Liangliang Deng
- Center of Micro-Nano System, School of Information Science and Technology, Fudan University, Shanghai200433, China
| | - Xiaoguo Li
- Center of Micro-Nano System, School of Information Science and Technology, Fudan University, Shanghai200433, China
| | - Saqib Rafique
- Center of Micro-Nano System, School of Information Science and Technology, Fudan University, Shanghai200433, China
| | - Yaxin Wang
- Center of Micro-Nano System, School of Information Science and Technology, Fudan University, Shanghai200433, China
| | - Yanyan Wang
- Center of Micro-Nano System, School of Information Science and Technology, Fudan University, Shanghai200433, China
| | - Kai Liu
- Center of Micro-Nano System, School of Information Science and Technology, Fudan University, Shanghai200433, China
| | - Fengcai Liu
- Center of Micro-Nano System, School of Information Science and Technology, Fudan University, Shanghai200433, China
| | - Yiyi Pan
- Center of Micro-Nano System, School of Information Science and Technology, Fudan University, Shanghai200433, China
| | - Xiaofei Yue
- Center of Micro-Nano System, School of Information Science and Technology, Fudan University, Shanghai200433, China
| | - Jing Wang
- Center of Micro-Nano System, School of Information Science and Technology, Fudan University, Shanghai200433, China
| | - Jun Tang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Science, Beijing Jiaotong University, Beijing100044, China
| | - Yingguo Yang
- Shanghai Institute of Applied Physics, Chinese Academy of Sciences, 2019 Jialuo Road, Shanghai201800, China
| | - Haoliang Wang
- Center of Micro-Nano System, School of Information Science and Technology, Fudan University, Shanghai200433, China
| | - Zejiao Shi
- Center of Micro-Nano System, School of Information Science and Technology, Fudan University, Shanghai200433, China
| | - Chongyuan Li
- Center of Micro-Nano System, School of Information Science and Technology, Fudan University, Shanghai200433, China
| | - Yajie Qin
- Center of Micro-Nano System, School of Information Science and Technology, Fudan University, Shanghai200433, China
| | - Anran Yu
- Center of Micro-Nano System, School of Information Science and Technology, Fudan University, Shanghai200433, China
| | - Yiqiang Zhan
- Center of Micro-Nano System, School of Information Science and Technology, Fudan University, Shanghai200433, China
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15
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Recent progress in perovskite solar cells: from device to commercialization. Sci China Chem 2022. [DOI: 10.1007/s11426-022-1426-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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