Diammonium-Mediated Perovskite Film Formation for High-Luminescence Red Perovskite Light-Emitting Diodes

Computational Screening of Ligands for Enhanced Interactions between Lead Halide Perovskite Quantum Dots

Ligand choice in nanoparticle systems is vital for developing efficient materials and enhancing electronic and chemical properties. Focusing on CsPbBr3, we demonstrate a strategy for modifying the electronic properties of lead halide perovskites through a systematic computational study on ligands with varying binding motifs, sizes, bridge lengths, π-electron conjugation, and electron withdrawing and donating groups. The calculations are benchmarked against experimental data. Choosing a ligand's π-electron system and binding group, followed by tuning the ligand's properties with substituents to the π-system, allows one to introduce ligand electronic states into the perovskite system's bands, close to band edges, and inside the material's fundamental band gap. One can also design surface states by inducing local distortions at the binding site, which can be tuned by altering the binding group of the ligand. Extension of a material's frontier orbitals onto ligands and the creation of surface states make charges available for transport and chemical reactivity, while avoiding charge trapping. In contrast, midgap ligand states trap charges permanently. Large ligands with high coverages interact among themselves, influencing ligand electronic properties and binding. Carboxylate tends to bind more strongly than the ammonium group. Electronegative oxygens in the carboxylate binding group and electron withdrawing substituents bound to the π-system lower ligand orbital energies relative to perovskite states. The reported theoretical analysis guides experimental design of perovskite-ligand systems for optoelectronic, energy, and quantum information applications.

Spray-Printed Light-Emitting Diodes with Perovskite/Polymer Composite Emitters on Various Transparent Substrates

Advancements in printing techniques are essential for fabricating next-generation displays. Lead halide perovskites demonstrate great potential as light emitters of solution-processed light-emitting diodes (LEDs). In particular, the perovskite/polymer composite emitters exhibit exceptional luminescent characteristics, mechanical flexibility, and environmental stability due to the improved film morphologies and defect passivation achieved through the introduction of polymer additives. However, solution-based conventional processing methods, such as spin-coating, slot-die coating, and inkjet printing are limited to planar substrates. Spray printing is a promising coating process, which can be applied for depositing composite emitters across various substrate types. In this study, we employed a spray-coating process to design planar and curved perovskite LEDs (PeLEDs) by incorporating methylammonium lead bromide (MAPbBr3) and poly(vinylpyrrolidone) (PVP) composite-based emitters. PVP played a critical role in enhancing the MAPbBr3 morphology through a strong coordination between Pb2+ ions and lone pair electrons in the PVP chains. Under optimized conditions of air pressure, spray time, and PVP concentration, the planar PeLEDs achieved a maximum luminance (Lmax) of 18,850 cd m-2, a current efficiency of 12.26 cd A-1, and an external quantum efficiency of 4.19%. The flexible PeLEDs retained their performance even after 1000 bending cycles at a bending radius of 10 mm. Furthermore, the spray-printed curved PeLEDs constructed on glass pipet- and spherical glass-based substrates demonstrated Lmax values of 3792 and 3368 cd m-2, respectively.

Modulation of Charge Transport Layer for Perovskite Light-Emitting Diodes

Perovskite light-emitting diodes (Pero-LEDs) have garnered significant attention due to their exceptional emission characteristics, including narrow full width at half maximum, high color purity, and tunable emission colors. Recent efficiency and operational stability advancements have positioned Pero-LEDs as a promising next-generation display technology. Extensive research and review articles on the compositional engineering and defect passivation of perovskite layers have substantially contributed to the development of multi-color and high-efficiency Pero-LEDs. However, the crucial aspect of charge transport layer (CTL) modulation in Pero-LEDs remains relatively underexplored. CTL modulation not only impacts the charge carrier transport efficiency and injection balance but also plays a critical role in passivating the perovskite surface, blocking ion migration, enhancing perovskite crystallinity, and improving light extraction efficiency. Therefore, optimizing CTLs is pivotal for further enhancing Pero-LED performance. Herein, this review discusses the roles of CTLs in Pero-LEDs and categorizes both reported and potential CTL materials. Then, various CTL optimization strategies are presented, alongside an analysis of the selection criteria for CTLs in high-performance Pero-LEDs. Finally, a summary and outlook on the potential of CTL modulation to further advance Pero-LED performances are provided.

Spectrally Stable and Bright Red Perovskite Light-Emitting Diodes

Mixing iodide and bromide in three-dimensional metal-halide perovskites is a facile strategy for achieving red light-emitting diodes (LEDs). However, these devices often face challenges such as instability in electroluminescence spectra and low brightness due to phase segregation in mixed-halide perovskites. Here, we demonstrate spectrally stable and bright red perovskite LEDs by substituting some of the halide ions with pseudohalogen thiocyanate ions (SCN-). We find that SCN- can occupy halogen vacancies, thereby releasing microstrain and passivating defects in the perovskite crystals. This leads to the suppression of mixed-halide phase segregation under electrical bias. As a result, the red perovskite LEDs exhibit a high brightness of >35 000 cd m-2 with stable Commission Internationale de l'Eclairage (CIE) coordinates of (0.713, 0.282). This brightness surpasses that of the best-performing red perovskite LEDs, showing great promise for advancing perovskite LEDs in display and lighting applications.

Efficient and Bright Deep-Red Light-Emitting Diodes based on a Lateral 0D/3D Perovskite Heterostructure

Bright and efficient deep-red light-emitting diodes (LEDs) are important for applications in medical therapy and biological imaging due to the high penetration of deep-red photons into human tissues. Metal-halide perovskites have potential to achieve bright and efficient electroluminescence due to their favorable optoelectronic properties. However, efficient and bright perovskite-based deep-red LEDs have not been achieved yet, due to either Auger recombination in low-dimensional perovskites or trap-assisted nonradiative recombination in 3D perovskites. Here, a lateral Cs4PbI6/FAxCs1- xPbI3 (0D/3D) heterostructure that can enable efficient deep-red perovskite LEDs at very high brightness is demonstrated. The Cs4PbI6 can facilitate the growth of low-defect FAxCs1- xPbI3, and act as low-refractive-index grids, which can simultaneously reduce nonradiative recombination and enhance light extraction. This device reaches a peak external quantum efficiency of 21.0% at a photon flux of 1.75 × 1021 m-2 s-1, which is almost two orders of magnitude higher than that of reported high-efficiency deep-red perovskite LEDs. Theses LEDs are suitable for pulse oximeters, showing an error <2% of blood oxygen saturation compared with commercial oximeters.

Dielectric Regulation for Efficient Top-Emission Perovskite Light-Emitting Diodes with Suppressed Efficiency Roll-off

Perovskite light-emitting diodes (PeLEDs) have shown incalculable application potential in the fields of next-generation displays and light communication owing to the rapidly increased external quantum efficiencies (EQEs). However, most PeLEDs obtain a maximum EQE at small current density (J) region and suffer from severe efficiency roll-off in different extents. Herein, it is demonstrated that the dopant with large dipole moment like KBF4 facilitates the effective dielectric regulation of perovskite emissive layer. The increased dielectric constant lowers the exciton binding energy and suppresses the Auger recombination of the 2D/3D segregated perovskite structure, which improves the photoluminescence quantum yield remarkably at an excitation intensity up to 103 mW cm-2. Accordingly, the top-emission PeLED that delivers a high maximum EQE above 20% is fabricated and can retain EQE > 10% at an extremely high J of 708 mA cm-2. These results represent one of the most efficient top-emission PeLEDs with ultra-low efficiency roll-off, which provide a viable methodology for tuning the dielectric response of perovskite films for improved high radiance performance of perovskite electroluminescence devices.

Bright and Stable Red Perovskite LEDs under High Current Densities

Perovskite LEDs (PeLEDs) have emerged as a next-generation light-emitting technology. Recent breakthroughs were made in achieving highly stable near-infrared and green PeLEDs. However, the operational lifetimes (T50) of visible PeLEDs under high current densities (>10 mA cm-2) remain unsatisfactory (normally <100 h), limiting the possibilities in solid-state lighting and AR/VR applications. This problem becomes more pronounced for mixed-halide (e.g., red and blue) perovskite emitters in which critical challenges such as halide segregation and spectral instability are present. Here, we demonstrate bright and stable red PeLEDs based on mixed-halide perovskites, showing measured T50 lifetimes of up to ∼357 h at currents of ≥25 mA cm-2, a record for the operational stability of visible PeLEDs under high current densities. The devices produce intense and stable emission with a maximum luminance of 28,870 cd m-2 (radiance: 1584 W sr-1 m-2), which is record-high for red PeLEDs. Key to this demonstration is the introduction of sulfonamide, a dipolar molecular stabilizer that effectively interacts with the ionic species in the perovskite emitters. It suppresses halide segregation and migration into the charge-transport layers, resulting in enhanced stability and brightness of the mixed-halide PeLEDs. These results represent a substantial step toward bright and stable PeLEDs for emerging applications.

Progress and Application of Halide Perovskite Materials for Solar Cells and Light Emitting Devices

Halide perovskite materials have attracted worldwide attention in the photovoltaic area due to the rapid improvement in efficiency, from less than 4% in 2009 to 26.1% in 2023 with only a nanometer lever photo-active layer. Meanwhile, this nova star found applications in many other areas, such as light emitting, sensor, etc. This review started with the fundamentals of physics and chemistry behind the excellent performance of halide perovskite materials for photovoltaic/light emitting and the methods for preparing them. Then, it described the basic principles for solar cells and light emitting devices. It summarized the strategies including nanotechnology to improve the performance and the application of halide perovskite materials in these two areas: from structure-property relation to how each component in the devices affects the overall performance. Moreover, this review listed the challenges for the future applications of halide perovskite materials.

Ligand-Induced Cation-π Interactions Enable High-Efficiency, Bright, and Spectrally Stable Rec. 2020 Pure-Red Perovskite Light-Emitting Diodes

Achieving high-performance perovskite light-emitting diodes (PeLEDs) with pure-red electroluminescence for practical applications remains a critical challenge because of the problematic luminescence property and spectral instability of existing emitters. Herein, high-efficiency Rec. 2020 pure-red PeLEDs, simultaneously exhibiting exceptional brightness and spectral stability, based on CsPb(Br/I)3 perovskite nanocrystals (NCs) capping with aromatic amino acid ligands featuring cation-π interactions, are reported. It is proven that strong cation-π interactions between the PbI6 -octahedra of perovskite units and the electron-rich indole ring of tryptophan (TRP) molecules not only chemically polish the imperfect surface sites, but also markedly increase the binding affinity of the ligand molecules, leading to high photoluminescence quantum yields and greatly enhanced spectral stability of the CsPb(Br/I)3 NCs. Moreover, the incorporation of small-size aromatic TRP ligands ensures superior charge-transport properties of the assembled emissive layers. The resultant devices emitting at around 635 nm demonstrate a champion external quantum efficiency of 22.8%, a max luminance of 12 910 cd m-2 , and outstanding spectral stability, representing one of the best-performing Rec. 2020 pure-red PeLEDs achieved so far.

Suppressing High-Order Phase for Efficient Pure Red Quasi-2D Perovskite Light-Emitting Diodes

Quasi-two-dimensional (quasi-2D) perovskites are promising for the realization of spectrally stable pure red perovskite light-emitting diodes (PeLEDs) with a single iodide component, because they avoid the halide separation that red three-dimensional perovskites of mixed halides have faced. However, the distribution of high-order phases in solution-processed quasi-2D perovskite films causes the spectral shift away from the pure red region. Here, we introduced a simple approach of adding excessive ligand combinations to redistribute the phase distribution of quasi-2D perovskite and to inhibit the high-order phase. Appropriate excess organic ligands will not affect charge injection but will keep the efficient energy funneling and passivate the defect. The narrowed phase distribution reduced the band tail state and restrained reverse charge transfer, resulting in enhanced radiation recombination. We obtained efficient and spectrally stable pure red PeLEDs at 638 nm (approaching the Rec. 2020 specification) with a peak EQE of 11.8% and maximum luminance of 1688 cd/cm². This study provides guidance for future developments of highly efficient pure red PeLEDs.