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Ahn J, Park T, Kang T, Im SG, Seo H, Kim BH, Kwon SJ, Oh SJ. Nanoseed-based physically unclonable function for on-demand encryption. SCIENCE ADVANCES 2025; 11:eadt7527. [PMID: 40279423 PMCID: PMC12024658 DOI: 10.1126/sciadv.adt7527] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2024] [Accepted: 03/24/2025] [Indexed: 04/27/2025]
Abstract
A physically unclonable function (PUF) is a promising hardware-based cryptographic primitive to prevent confidential information leakage. However, conventional techniques, such as weak and strong PUFs, have limitations in overcoming the trade-off between security and storage volume. This study introduces nanoseed-based PUFs that overcome the drawbacks of conventional PUFs using optical and electrical randomness originated from nanoseeds and a unique on-demand cryptographic algorithm. Ideally mixed PbS quantum dots and Ag nanocrystals in the same medium are exploited as nanoseeds to simultaneously promote independent optical and electrical randomness. The number of secured keys that can be generated on-demand by combining the optical and electrical features in parallel using shuffling method is almost infinite (>1058741 per square millimeter). The proposed PUF achieves a near-ideal Hamming distance in uniqueness and randomness tests, validating its cryptographic efficacy. Last, storage-free and on-demand PUF with the shuffling method are demonstrated using smartphones, realizing manufacturer-/user-friendly cryptography system.
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Affiliation(s)
- Junhyuk Ahn
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
- Materials Architecturing Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Taesung Park
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Taewoo Kang
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Seong-Gyun Im
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hanseok Seo
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Bong-Hoon Kim
- Department of Robotics and Mechatronics Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea
| | - Seok Joon Kwon
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Departments of Semiconductor Convergence Engineering and Future Energy Engineering and Institute of Energy Science and Technology (SIEST), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Soong Ju Oh
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
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2
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Li C, Xu R, Duan Y, Zhang X, Zhu D, Du A, Peng Z, Wang S, Shi K, Zhao W. Unraveling spin-orbit torque-induced multistate magnetization switching in Co/Gd ferrimagnetic multilayers for physically unclonable functions. NANOSCALE 2025; 17:8016-8024. [PMID: 40029209 DOI: 10.1039/d4nr04230a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/05/2025]
Abstract
Ferrimagnetic materials driven by spin-orbit torque (SOT) exhibit a distinctive characteristic of multistate magnetization switching and enable versatile applications. However, the underlying mechanism governing multistate magnetization switching in ferrimagnetic materials remains unelucidated. Here, by studying SOT-induced magnetization switching in Co/Gd ferrimagnetic multilayers with perpendicular magnetic anisotropy (PMA), we demonstrate that the multistate magnetization switching behavior is observed not only in [Co/Gd]n but also in [Co/Gd]L/CoFeB stacks and size-shrinking dot devices. Under the stimuli of numerous pulsed SOT currents, the anomalous Hall resistance of our devices is found to change successively and finally saturate at a specific value, depending on the SOT current density. This behavior suggests a substantial pinning effect that prevents the domain wall from expansion, as verified by magneto-optical Kerr experiments. Because the pinning effect is intrinsic and specific to each Hall-bar device, we further realized analogue physically unclonable functions (PUFs) in a 10 × 10 Hall-bar array and generated multiple PUFs using SOT pulse currents of different amplitudes. Our work unravels the underlying mechanism of SOT-driven multistate switching in ferrimagnets and provides insights into materials engineering to realize high-density memory devices and spintronic analogue PUFs.
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Affiliation(s)
- Caiyun Li
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
| | - Renyou Xu
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
| | - Yuqi Duan
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
| | - Xiuye Zhang
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
| | - Daoqian Zhu
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
- National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou 311115, China
| | - Ao Du
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
| | - Zhiyang Peng
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
| | - Shiqi Wang
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
| | - Kewen Shi
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
- National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou 311115, China
| | - Weisheng Zhao
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
- National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou 311115, China
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3
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Zhu D, Wang C, Jiao F, Xu J, Xu H, Han S, Cao P, Zeng Y, Fang M, Liu W, Zhu D, Lu Y. Multilevel, solar-blind, and thermostable physical unclonable functions based on host-sensitized luminescence of β-Ga 2O 3:Dy 3+ . NANOSCALE 2025; 17:7128-7140. [PMID: 39976504 DOI: 10.1039/d4nr05237d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/25/2025]
Abstract
Optical physical unclonable functions (PUFs) are powerful tools to combat counterfeiting, owing to their unpredictable preparation processes and unique, identifiable information content. Achieving high entropy and robustness in optical PUFs is essential for practical applications but remains challenging. This study demonstrates a multilevel, solar-blind, and thermostable PUF based on host-sensitized luminescence of trivalent dysprosium (Dy3+) in β-phase gallium oxide (β-Ga2O3). The controllable occupation of Dy3+ in both tetrahedral and octahedral Ga3+ sites of β-Ga2O3 results in heterochromatic optical emission, which affords the resulting PUFs with a multilevel encoding capacity of 44096 at 64 × 64 pixels. The wide bandgap (∼4.6 eV) of β-Ga2O3:Dy3+ confines the PUF response to solar-blind irradiation, encompassing a light spectrum in the range 230-270 nm, which does not overlap with ambient light, ensuring interference-free stimulation and therefore achieving 100% recognition accuracy. Additionally, the high thermal quenching activation energy (0.386 eV) of β-Ga2O3:Dy3+ provides thermal stability, enabling the PUFs to operate from room temperature up to 125 °C. With near-ideal uniformity, uniqueness, and reproducibility, these PUFs hold considerable promise for practical applications in anticounterfeiting and encryption.
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Affiliation(s)
- Dong Zhu
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, PR China.
- College of Physics and Optoelectronic Engineering Shenzhen University, Shenzhen 518060, China
| | - Chunfeng Wang
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, PR China.
| | - Fuhang Jiao
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, PR China.
| | - Jiujun Xu
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, PR China.
| | - Haoran Xu
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, PR China.
| | - Shun Han
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, PR China.
| | - Peijiang Cao
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, PR China.
| | - Yuxiang Zeng
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, PR China.
| | - Ming Fang
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, PR China.
| | - Wenjun Liu
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, PR China.
| | - Deliang Zhu
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, PR China.
| | - Youming Lu
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518060, PR China.
- College of Physics and Optoelectronic Engineering Shenzhen University, Shenzhen 518060, China
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4
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Woo KS, Williams RS, Kumar S. Localized Conduction Channels in Memristors. Chem Rev 2025; 125:294-325. [PMID: 39702905 DOI: 10.1021/acs.chemrev.4c00454] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2024]
Abstract
Since the early 2000s, the impending end of Moore's scaling, as the physical limits to shrinking transistors have been approached, has fueled interest in improving the functionality and efficiency of integrated circuits by employing memristors or two-terminal resistive switches. Formation (or avoidance) of localized conducting channels in many memristors, often called "filaments", has been established as the basis for their operation. While we understand some qualitative aspects of the physical and thermodynamic origins of conduction localization, there are not yet quantitative models that allow us to predict when they will form or how large they will be. Here we compile observations and explanations of channel formation that have appeared in the literature since the 1930s, show how many of these seemingly unrelated pieces fit together, and outline what is needed to complete the puzzle. This understanding will be a necessary predictive component for the design and fabrication of post-Moore's-era electronics.
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Affiliation(s)
- Kyung Seok Woo
- Sandia National Laboratories, Livermore, California 94550, United States
- Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843, United States
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - R Stanley Williams
- Sandia National Laboratories, Livermore, California 94550, United States
- Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843, United States
| | - Suhas Kumar
- Sandia National Laboratories, Livermore, California 94550, United States
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5
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Wang Z, Li M, Fu Y, Wang Y, Lu Y. Robust and Versatile Biodegradable Unclonable Anti-Counterfeiting Labels with Multi-Mode Optical Encoding Using Protein-Mediated Luminescent Calcite Signatures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2409170. [PMID: 39623811 DOI: 10.1002/adma.202409170] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2024] [Revised: 10/01/2024] [Indexed: 01/24/2025]
Abstract
Physical unclonable functions (PUFs) are emerging as a cutting-edge technology for enhancing information security by providing robust security authentication and non-reproducible cryptographic keys. Incorporating renewable and biocompatible materials into PUFs ensures safety for handling, compatibility with biological systems, and reduced environmental impact. However, existing PUF platforms struggle to balance high encoding capacity, diversified encryption signatures, and versatile functionalities with sustainability and biocompatibility. Here, all-biomaterial-based unclonable anti-counterfeiting labels featuring multi-mode encoding, multi-level cryptographic keys, and multiple authentication operations are developed by imprinting biomimetic-grown calcites on versatile silk protein films. In this label, the inherent non-clonability comes from the randomized characteristics of calcites, mediated by silk protein during crystal growth. The successful embedding of photoluminescent molecules into calcite lattices, assisted by silk protein, allows the resulting platform to utilize fluorescence patterns alongside birefringence for high-capacity encoding. This design facilitates easy and rapid authentication through Hamming distance and convolutional neural networks using standard cameras and portable microscopes. Moreover, angle-dependent polarization patterns enable multi-level key generation, while multi-spectral fluorescence signals offer multi-channel keys. The developed anti-counterfeiting labels combine biodegradability, green manufacture, easy authentication, high-level complexity, low cost, robustness, patternability, and versatility, offering a practical and high-security solution to combat counterfeiting across various applications.
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Affiliation(s)
- Ziting Wang
- National Laboratory of Solid State Microstructures, Key Laboratory of Intelligent Optical Sensing and Manipulation, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Meng Li
- Laboratory for Advanced Biopolymers, Department of Civil and Environmental Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02142, USA
| | - Yinghao Fu
- National Laboratory of Solid State Microstructures, Key Laboratory of Intelligent Optical Sensing and Manipulation, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Yu Wang
- National Laboratory of Solid State Microstructures, Key Laboratory of Intelligent Optical Sensing and Manipulation, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Yanqing Lu
- National Laboratory of Solid State Microstructures, Key Laboratory of Intelligent Optical Sensing and Manipulation, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
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6
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Kang J, Han D, Lee K, Ko S, Koh D, Park C, Ahn J, Yu M, Pakala M, Noh S, Lee H, Kwon J, Kim KJ, Park J, Lee S, Lee J, Park BG. Highly Reliable Magnetic Memory-Based Physical Unclonable Functions. ACS NANO 2024; 18:12853-12860. [PMID: 38718347 PMCID: PMC11112974 DOI: 10.1021/acsnano.4c00078] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2024] [Revised: 04/12/2024] [Accepted: 04/25/2024] [Indexed: 05/22/2024]
Abstract
Magnetic random-access memory (MRAM), which stores information through control of the magnetization direction, offers promising features as a viable nonvolatile memory alternative, including high endurance and successful large-scale commercialization. Recently, MRAM applications have extended beyond traditional memories, finding utility in emerging computing architectures such as in-memory computing and probabilistic bits. In this work, we report highly reliable MRAM-based security devices, known as physical unclonable functions (PUFs), achieved by exploiting nanoscale perpendicular magnetic tunnel junctions (MTJs). By intentionally randomizing the magnetization direction of the antiferromagnetically coupled reference layer of the MTJs, we successfully create an MRAM-PUF. The proposed PUF shows ideal uniformity and uniqueness and, in particular, maintains performance over a wide temperature range from -40 to +150 °C. Moreover, rigorous testing with more than 1584 challenge-response pairs of 64 bits each confirms resilience against machine learning attacks. These results, combined with the merits of commercialized MRAM technology, would facilitate the implementation of MRAM-PUFs.
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Affiliation(s)
- Jaimin Kang
- Department
of Material Science and Engineering, Korea
Advanced Institute of Science and Technology (KAIST), 291 Daehak-road, Yuseong-gu, Daejeon 34141, Korea
| | - Donghyeon Han
- Department
of Material Science and Engineering, Korea
Advanced Institute of Science and Technology (KAIST), 291 Daehak-road, Yuseong-gu, Daejeon 34141, Korea
| | - Kyungchul Lee
- Department
of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea
| | - San Ko
- Department
of Physics, Korea Advanced Institute of
Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea
| | - Daekyu Koh
- Department
of Material Science and Engineering, Korea
Advanced Institute of Science and Technology (KAIST), 291 Daehak-road, Yuseong-gu, Daejeon 34141, Korea
| | - Chando Park
- Applied
Materials, Inc., 3050 Bowers Avenue, Santa Clara, California 95054, United States
| | - Jaesoo Ahn
- Applied
Materials, Inc., 3050 Bowers Avenue, Santa Clara, California 95054, United States
| | - Minrui Yu
- Applied
Materials, Inc., 3050 Bowers Avenue, Santa Clara, California 95054, United States
| | - Mahendra Pakala
- Applied
Materials, Inc., 3050 Bowers Avenue, Santa Clara, California 95054, United States
| | - Sujung Noh
- R&D
Division, Hyundai Motor Company, 150 Hyundaiyeonguso-ro, Namyang-eup, Hwaseong 18280, Korea
| | - Hansaem Lee
- R&D
Division, Hyundai Motor Company, 150 Hyundaiyeonguso-ro, Namyang-eup, Hwaseong 18280, Korea
| | - JoonHyun Kwon
- R&D
Division, Hyundai Motor Company, 150 Hyundaiyeonguso-ro, Namyang-eup, Hwaseong 18280, Korea
| | - Kab-Jin Kim
- Department
of Physics, Korea Advanced Institute of
Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea
| | - Jongsun Park
- Department
of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea
| | - Soogil Lee
- Department
of Material Science and Engineering, Korea
Advanced Institute of Science and Technology (KAIST), 291 Daehak-road, Yuseong-gu, Daejeon 34141, Korea
- Department
of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Sujeong-gu, Seongnam 13120, Korea
| | - Jisung Lee
- R&D
Division, Hyundai Motor Company, 150 Hyundaiyeonguso-ro, Namyang-eup, Hwaseong 18280, Korea
| | - Byong-Guk Park
- Department
of Material Science and Engineering, Korea
Advanced Institute of Science and Technology (KAIST), 291 Daehak-road, Yuseong-gu, Daejeon 34141, Korea
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7
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Han Y, Lee S, Lee EK, Yoo H, Jang BC. Strengthening Multi-Factor Authentication Through Physically Unclonable Functions in PVDF-HFP-Phase-Dependent a-IGZO Thin-Film Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2309221. [PMID: 38454740 PMCID: PMC11095217 DOI: 10.1002/advs.202309221] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2023] [Revised: 01/14/2024] [Indexed: 03/09/2024]
Abstract
For enhanced security in hardware-based security devices, it is essential to extract various independent characteristics from a single device to generate multiple keys based on specific values. Additionally, the secure destruction of authentication information is crucial for the integrity of the data. Doped amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) using poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) induce a dipole doping effect through a phase-transition process, creating physically unclonable function (PUF) devices for secure user information protection. The PUF security key, generated at VGS = 20 V in a 20 × 10 grid, demonstrates uniformity of 42% and inter-Hamming distance (inter-HD) of 49.79% in the β-phase of PVDF-HFP. However, in the γ-phase, the uniformity drops to 22.5%, and inter-HD decreases to 35.74%, indicating potential security key destruction during the phase transition. To enhance security, a multi-factor authentication (MFA) system is integrated, utilizing five security keys extracted from various TFT parameters. The security keys from turn-on voltage (VON), VGS = 20 V, VGS = 30 V, mobility, and threshold voltage (Vth) exhibit near-ideal uniformities and inter-HDs, with the highest values of 58% and 51.68%, respectively. The dual security system, combining phase transition and MFA, establishes a robust protection mechanism for privacy-sensitive user information.
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Affiliation(s)
- Youngmin Han
- Department of Electronic Engineering Gachon University1342 Seongnam‐daeroSeongnam13120South Korea
| | - Subin Lee
- Department of Electronic Engineering Gachon University1342 Seongnam‐daeroSeongnam13120South Korea
| | - Eun Kwang Lee
- Department of Chemical EngineeringPukyong National UniversityBusan48513South Korea
| | - Hocheon Yoo
- Department of Electronic Engineering Gachon University1342 Seongnam‐daeroSeongnam13120South Korea
| | - Byung Chul Jang
- School of Electronics EngineeringKyungpook National University80 Daehakro, BukguDaegu41566Republic of Korea
- School of Electronics and Electrical EngineeringKyungpook National University80 Daehakro, BukguDaegu41566Republic of Korea
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8
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Wang K, Shi J, Lai W, He Q, Xu J, Ni Z, Liu X, Pi X, Yang D. All-silicon multidimensionally-encoded optical physical unclonable functions for integrated circuit anti-counterfeiting. Nat Commun 2024; 15:3203. [PMID: 38615044 PMCID: PMC11016093 DOI: 10.1038/s41467-024-47479-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/12/2023] [Accepted: 04/02/2024] [Indexed: 04/15/2024] Open
Abstract
Integrated circuit anti-counterfeiting based on optical physical unclonable functions (PUFs) plays a crucial role in guaranteeing secure identification and authentication for Internet of Things (IoT) devices. While considerable efforts have been devoted to exploring optical PUFs, two critical challenges remain: incompatibility with the complementary metal-oxide-semiconductor (CMOS) technology and limited information entropy. Here, we demonstrate all-silicon multidimensionally-encoded optical PUFs fabricated by integrating silicon (Si) metasurface and erbium-doped Si quantum dots (Er-Si QDs) with a CMOS-compatible procedure. Five in-situ optical responses have been manifested within a single pixel, rendering an ultrahigh information entropy of 2.32 bits/pixel. The position-dependent optical responses originate from the position-dependent radiation field and Purcell effect. Our evaluation highlights their potential in IoT security through advanced metrics like bit uniformity, similarity, intra- and inter-Hamming distance, false-acceptance and rejection rates, and encoding capacity. We finally demonstrate the implementation of efficient lightweight mutual authentication protocols for IoT applications by using the all-Si multidimensionally-encoded optical PUFs.
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Affiliation(s)
- Kun Wang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Jianwei Shi
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, China
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Wenxuan Lai
- State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Qiang He
- State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Jun Xu
- School of Electronic Science and Engineering & National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, Jiangsu, 210093, China
- School of Microelectronics, Nantong University, Nantong, Jiangsu, 226019, China
| | - Zhenyi Ni
- State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China.
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, China.
| | - Xiaodong Pi
- State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China.
- Institute of Advanced Semiconductors, ZJU-Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, Hangzhou, Zhejiang, 311215, China.
| | - Deren Yang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China.
- Institute of Advanced Semiconductors, ZJU-Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, Hangzhou, Zhejiang, 311215, China.
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9
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Yang Q, Han D, Zhao S, Kang J, Wang F, Lee SC, Lei J, Lee KJ, Park BG, Yang H. Field-free spin-orbit torque switching in ferromagnetic trilayers at sub-ns timescales. Nat Commun 2024; 15:1814. [PMID: 38418454 PMCID: PMC10901790 DOI: 10.1038/s41467-024-46113-1] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Accepted: 02/14/2024] [Indexed: 03/01/2024] Open
Abstract
Current-induced spin torques enable the electrical control of the magnetization with low energy consumption. Conventional magnetic random access memory (MRAM) devices rely on spin-transfer torque (STT), this however limits MRAM applications because of the nanoseconds incubation delay and associated endurance issues. A potential alternative to STT is spin-orbit torque (SOT). However, for practical, high-speed SOT devices, it must satisfy three conditions simultaneously, i.e., field-free switching at short current pulses, short incubation delay, and low switching current. Here, we demonstrate field-free SOT switching at sub-ns timescales in a CoFeB/Ti/CoFeB ferromagnetic trilayer, which satisfies all three conditions. In this trilayer, the bottom magnetic layer or its interface generates spin currents with polarizations in both in-plane and out-of-plane components. The in-plane component reduces the incubation time, while the out-of-plane component realizes field-free switching at a low current. Our results offer a field-free SOT solution for energy-efficient scalable MRAM applications.
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Affiliation(s)
- Qu Yang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Donghyeon Han
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Shishun Zhao
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Jaimin Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Fei Wang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Sung-Chul Lee
- Next Generation Process Development Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd., Hwaseong, Gyeonggi, 18448, Korea
| | - Jiayu Lei
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Kyung-Jin Lee
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Byong-Guk Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore.
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10
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Xu R, Feng M, Xie J, Sang X, Yang J, Wang J, Li Y, Khan A, Liu L, Song F. Physically Unclonable Holographic Encryption and Anticounterfeiting Based on the Light Propagation of Complex Medium and Fluorescent Labels. ACS APPLIED MATERIALS & INTERFACES 2024; 16:2888-2901. [PMID: 38165225 DOI: 10.1021/acsami.3c14571] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/03/2024]
Abstract
Physically unclonable function (PUF) methods have high security, but their wide application is limited by complex encoding, large database, advanced external characterization equipment, and complicated comparative authentication. Therefore, we creatively propose the physically unclonable holographic encryption and anticounterfeiting based on the light propagation of complex medium and fluorescent labels. As far as we know, this is the first holographic encryption and anticounterfeiting method with a fluorescence physically unclonable property. The proposed method reduces the above requirements of traditional PUF methods and significantly reduces the cost. The angle-multiplexed PUF fluorescent label is the physical secret key. The information is encrypted as computer-generated holograms (CGH). Many physical parameters in the system are used as the parameter secret keys. The Diffie-Hellman key exchange algorithm is improved to transfer parameter secret keys. A variety of complex medium hologram generation methods are proposed and compared. The effectiveness, security, and robustness of the method are studied and analyzed. Finally, a graphical user interface (GUI) is designed for the convenience of users. The advantages of this method include lower PUF encoding complexity, effective reduction of the database size, lower requirements for characterization equipment, and direct use of decrypted information without complicated comparative authentication to reduce misjudgment. It is believed that the method proposed in this paper will pave the way for the popularization and application of PUF-based anticounterfeiting and encryption methods.
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Affiliation(s)
- Rui Xu
- School of Physics, The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Nankai University, Tianjin 300071, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Ming Feng
- School of Physics, The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Nankai University, Tianjin 300071, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Jinyue Xie
- School of Physics, The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Nankai University, Tianjin 300071, China
| | - Xu Sang
- School of Physics, The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Nankai University, Tianjin 300071, China
| | - Jiaxin Yang
- School of Physics, The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Nankai University, Tianjin 300071, China
| | - Jingru Wang
- School of Physics, The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Nankai University, Tianjin 300071, China
| | - Yan Li
- School of Physics, The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Nankai University, Tianjin 300071, China
| | - Adnan Khan
- School of Physics, The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Nankai University, Tianjin 300071, China
| | - Lisa Liu
- School of Physics, The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Nankai University, Tianjin 300071, China
| | - Feng Song
- School of Physics, The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Nankai University, Tianjin 300071, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
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Park G, Choi YS, Kwon SJ, Yoon DK. Planar Spin Glass with Topologically Protected Mazes in the Liquid Crystal Targeting for Reconfigurable Micro Security Media. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303077. [PMID: 37148534 DOI: 10.1002/adma.202303077] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2023] [Revised: 12/12/2012] [Indexed: 05/08/2023]
Abstract
The planar spin glass pattern is widely known for its inherent randomness, resulting from the geometrical frustration. As such, developing physical unclonable functions (PUFs)-which operate with device randomness-with planar spin glass patterns is a promising candidate for an advanced security systems in the upcoming digitalized society. Despite their inherent randomness, traditional magnetic spin glass patterns pose considerable obstacles in detection, making it challenging to achieve authentication in security systems. This necessitates the development of facilely observable mimetic patterns with similar randomness to overcome these challenges. Here, a straightforward approach is introduced using a topologically protected maze pattern in the chiral liquid crystals (LCs). This maze exhibits a comparable level of randomness to magnetic spin glass and can be reliably identified through the combination of optical microscopy with machine learning-based object detection techniques. The "information" embedded in the maze can be reconstructed through thermal phase transitions of the LCs in tens of seconds. Furthermore, incorporating various elements can enhance the optical PUF, resulting in a multi-factor security medium. It is expected that this security medium, based on microscopically controlled and macroscopically uncontrolled topologically protected structures, may be utilized as a next-generation security system.
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Affiliation(s)
- Geonhyeong Park
- Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Yun-Seok Choi
- Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - S Joon Kwon
- School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
- SKKU Institute of Energy Science & Technology (SIEST), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
- KAIST Institute for Nanocentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Dong Ki Yoon
- Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
- Department of Semiconductor Convergence Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
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Kim Y, Lim J, Lim JH, Hwang E, Lee H, Kim M, Ha I, Cho H, Kwon J, Oh J, Ko SH, Pan H, Hong S. Reconfigurable Multilevel Optical PUF by Spatiotemporally Programmed Crystallization of Supersaturated Solution. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2212294. [PMID: 36940430 DOI: 10.1002/adma.202212294] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/30/2022] [Revised: 03/11/2023] [Indexed: 06/02/2023]
Abstract
Physical unclonable functions (PUFs) are emerging as an alternative to information security by providing an advanced level of cryptographic keys with non-replicable characteristics, yet the cryptographic keys of conventional PUFs are not reconfigurable from the ones assigned at the manufacturing stage and the overall authentication process slows down as the number of entities in the dataset or the length of cryptographic key increases. Herein, a supersaturated solution-based PUF (S-PUF) is presented that utilizes stochastic crystallization of a supersaturated sodium acetate solution to allow a time-efficient, hierarchical authentication process together with on-demand rewritability of cryptographic keys. By controlling the orientation and the average grain size of the sodium acetate crystals via a spatiotemporally programmed temperature profile, the S-PUF now includes two global parameters, that is, angle of rotation and divergence of the diffracted beam, in addition to the speckle pattern to produce multilevel cryptographic keys, and these parameters function as prefixes for the classification of each entity for a fast authentication process. At the same time, the reversible phase change of sodium acetate enables repeated reconfiguration of the cryptographic key, which is expected to offer new possibilities for a next-generation, recyclable anti-counterfeiting platform.
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Affiliation(s)
- Youngchan Kim
- Optical Nanoprocessing Lab, Department of Mechanical Engineering, BK21 FOUR ERICA-ACE Center, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan, 15588, South Korea
| | - Jaemook Lim
- Optical Nanoprocessing Lab, Department of Mechanical Engineering, BK21 FOUR ERICA-ACE Center, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan, 15588, South Korea
| | - Ji Hwan Lim
- Optical Nanoprocessing Lab, Department of Mechanical Engineering, BK21 FOUR ERICA-ACE Center, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan, 15588, South Korea
| | - Eunseung Hwang
- Optical Nanoprocessing Lab, Department of Mechanical Engineering, BK21 FOUR ERICA-ACE Center, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan, 15588, South Korea
| | - Hyunkoo Lee
- Optical Nanoprocessing Lab, Department of Mechanical Engineering, BK21 FOUR ERICA-ACE Center, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan, 15588, South Korea
| | - Minwoo Kim
- Department of Mechanical Engineering/Institute of Engineering Research, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, South Korea
| | - Inho Ha
- Department of Mechanical Engineering/Institute of Engineering Research, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, South Korea
| | - Hyunmin Cho
- Department of Nano Manufacturing Technology, Korea Institute of Machinery & Materials (KIMM), 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon, 34103, South Korea
| | - Jinhyeong Kwon
- Smart Manufacturing System R&D Department, Korea Institute of Industrial Technology (KITECH), 89 Yangdaegiro-gil, Ipjang-myeon, Seobuk-gu, Chungchengnam-do, Cheonan, 31056, South Korea
| | - Junho Oh
- Bio-inspired Energy and Thermal Transport Engineering Research Lab, Department of Mechanical Engineering, BK21 FOUR ERICA-ACE Center, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan, 15588, South Korea
| | - Seung Hwan Ko
- Department of Mechanical Engineering/Institute of Engineering Research, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, South Korea
| | - Heng Pan
- Multiscale Manufacturing Lab, J. Mike Walker '66 Department of Mechanical Engineering, Texas A&M University, College Station, TX, 77843, USA
| | - Sukjoon Hong
- Optical Nanoprocessing Lab, Department of Mechanical Engineering, BK21 FOUR ERICA-ACE Center, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan, 15588, South Korea
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