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Xia Y, Song B, Zhang Z, Wang KL, Li YH, Li N, Chen CH, Chen J, Xing G, Wang ZK. Vertically Concentrated Quantum Wells Enabling Highly Efficient Deep-Blue Perovskite Light-Emitting Diodes. Angew Chem Int Ed Engl 2024; 63:e202403739. [PMID: 38565430 DOI: 10.1002/anie.202403739] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/22/2024] [Revised: 03/27/2024] [Accepted: 04/02/2024] [Indexed: 04/04/2024]
Abstract
Deep-blue perovskite light-emitting diodes (PeLEDs) based on quasi-two-dimensional (quasi-2D) systems exist heightened sensitivity to the domain distribution. The top-down crystallization mode will lead to a vertical gradient distribution of quantum well (QW) structure, which is unfavorable for deep-blue emission. Herein, a thermal gradient annealing treatment is proposed to address the polydispersity issue of vertical QWs in quasi-2D perovskites. The formation of large-n domains at the upper interface of the perovskite film can be effectively inhibited by introducing a low-temperature source in the annealing process. Combined with the utilization of NaBr to inhibit the undesirable n=1 domain, a vertically concentrated QW structure is ultimately attained. As a result, the fabricated device delivers a narrow and stable deep-blue emission at 458 nm with an impressive external quantum efficiency (EQE) of 5.82 %. Green and sky-blue PeLEDs with remarkable EQE of 21.83 % and 17.51 % are also successfully achieved, respectively, by using the same strategy. The findings provide a universal strategy across the entire quasi-2D perovskites, paving the way for future practical application of PeLEDs.
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Affiliation(s)
- Yu Xia
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Bin Song
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Zhipeng Zhang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, 999078 Macao SAR, China
| | - Kai-Li Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Yu-Han Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Nan Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Chun-Hao Chen
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Jing Chen
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, 999078 Macao SAR, China
| | - Zhao-Kui Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
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2
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Sun S, Lu M, Lu P, Li X, Zhang F, Wu Z, Wang T, Yan F, Li T, Feng T, Zhang Y, Bai X. Modulation of Nucleation and Growth Kinetics of Perovskite Nanocrystals Enables Efficient and Spectrally Stable Pure-Red Light-Emitting Diodes. NANO LETTERS 2024; 24:5631-5638. [PMID: 38669049 DOI: 10.1021/acs.nanolett.4c01099] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/09/2024]
Abstract
Perovskite light-emitting diodes (PeLEDs) based on CsPb(Br/I)3 nanocrystals (NCs) usually suffer from severe spectral instability under operating voltage due to the poor-quality PeNCs. Herein, zeolite was utilized to prepare high-quality CsPb(Br/I)3 NCs via promoting the homogeneous nucleation and growth and suppressing the Ostwald ripening of PeNCs. In addition, the decomposed zeolite interacted strongly with PeNCs through Pb-O bonds and hydrogen bonds, which inhibited the formation of defects and suppressed halide ion migration, leading to an improved photoluminescence quantum yield (PLQY) and enhanced stability of PeNCs. Moreover, the strong binding affinity of decomposed zeolite to PeNCs contributed to the formation of homogeneous perovskite films with high PLQY. As a result, pure-red PeLEDs with Commission International de I'Eclairage (CIE) coordinates of (0.705, 0.291) were fabricated, approaching the Rec. 2020 red primary color. The devices achieved a peak external quantum efficiency of 23.0% and outstanding spectral stability.
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Affiliation(s)
- Siqi Sun
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Min Lu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Po Lu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Xin Li
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Fujun Zhang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Zhennan Wu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Tianshuang Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Fengping Yan
- Key Laboratory of All Optical Network and Advanced Telecommunication Network, Ministry of Education, Institute of Lightwave Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Ting Li
- Key Laboratory of All Optical Network and Advanced Telecommunication Network, Ministry of Education, Institute of Lightwave Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Ting Feng
- Hebei Key Laboratory of Micro-Nano Precision Optical Sensing and Measurement Technology, School of Control Engineering, Northeastern University at Qinhuangdao, Qinhuangdao 066004, China
| | - Yu Zhang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Xue Bai
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
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Sheng Y, Chen P, Gao Y, He Y, Li J, Muhammad, Xie X, Cheng C, Yang J, Chang Y, Tong G, Jiang Y. Tuneable Efficient White Emission of Sb 3+/Mn 2+ Co-Doped Lead-Free Perovskites for Single-Component White Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19175-19183. [PMID: 38573052 DOI: 10.1021/acsami.4c00745] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/05/2024]
Abstract
Inorganic lead-free perovskite nanocrystals (NCs) with broadband self-trapped exciton (STEs) emission and low toxicity have shown enormous application prospects in the field of display and lighting. However, white light-emitting diodes (WLEDs) based on a single-component material with high photoluminescence quantum yield (PLQY) remain challenging. Here, we demonstrate a novel codoping strategy by introducing Sb3+/Mn2+ ions to achieve the tuneable dual emission in lead-free perovskite Cs3InCl6 NCs. The PLQY increases to 59.64% after doping with Sb3+. The codoped Cs3InCl6 NCs exhibit efficient white light emission due to the energy transfer channel from STEs to Mn2+ ions with PLQY of 51.38%. Density functional theory (DFT) calculations have been used to verify deeply the effects of Sb3+/Mn2+ doping. WLEDs based on Sb3+/Mn2+-codoped Cs3InCl6 NCs are explored with color rendering index of 85.5 and color coordinate of (0.398, 0.445), which have been successfully applied as photodetector lighting sources. This work provides a new perspective for designing novel lead-free perovskites to achieve single-component WLEDs.
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Affiliation(s)
- Yuanyuan Sheng
- School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China
| | - Ping Chen
- School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China
- The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, People's Republic of China
| | - Yanpeng Gao
- School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China
| | - Yong He
- School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China
| | - Junchun Li
- School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China
| | - Muhammad
- School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China
| | - Xiang Xie
- Jianghuai Advance Technology Center, Hefei 230000, People's Republic of China
| | - Chen Cheng
- School of Microelectronics, Hefei University of Technology, Hefei 230009, People's Republic of China
| | - Jingting Yang
- School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China
| | - Yajing Chang
- State Key Laboratory of Pulsed Power Laser Technology, National University of Defense Technology, Hefei 230037, People's Republic of China
| | - Guoqing Tong
- School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China
| | - Yang Jiang
- School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China
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4
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Nong Y, Yao J, Li J, Xu L, Yang Z, Li C, Song J. Boosting External Quantum Efficiency of Blue Perovskite QLEDs Exceeding 23% by Trifluoroacetate Passivation and Mixed Hole Transportation Design. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2402325. [PMID: 38631673 DOI: 10.1002/adma.202402325] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/14/2024] [Revised: 04/03/2024] [Indexed: 04/19/2024]
Abstract
Perovskite quantum dot-based light-emitting diodes (QLEDs) have been considered a promising display technology due to their wide color gamut for authentic color expression. Currently, the external quantum efficiency (EQE) for state-of-the-art blue perovskite QLEDs is about 15%, which still lags behind its green and red counterparts (>25%) and blue film-based LEDs. Here, blue perovskite QLEDs that achieve an EQE of 23.5% at 490 nm is presented, to the best knowledge, which is the highest value reported among blue perovskite-based LED fields. This impressive efficiency is achieved through a combination of quantum dot (QD) passivation and optimal device design. First, blue mixed halide perovskite CsPbCl3- xBrx QDs passivated by trifluoroacetate exhibit excellent exciton recombination behavior with a photoluminescence quantum yield of 84% due to reducing uncoordinated Pb surface defects. Furthermore, the device is designed by introducing a mixed hole-transport layer (M-HTL) to increase hole injection and transportation capacity and improve carrier balance. It is further found that M-HTL can decrease carrier leakage and increase radiative recombination in the device, evidenced by the visual electroluminescence spectrum at 2.0 V. The work breaks through the EQE gap of 20% for blue perovskite-based QLEDs and significantly promotes their commercialization process.
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Affiliation(s)
- Yingyi Nong
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Jisong Yao
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Jiaqi Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Leimeng Xu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Zhi Yang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Chuang Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Jizhong Song
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
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5
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Zhou X, Yang M, Shen C, Lian L, Hou L, Zhang J. Synchronously Polishing the Lead-Rich Surface and Passivating Surface Defects of CsPb(Br/I) 3 Quantum Dots for High-Performance Pure-Red PeLEDs. NANO LETTERS 2024; 24:3719-3726. [PMID: 38484387 DOI: 10.1021/acs.nanolett.4c00220] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/28/2024]
Abstract
Mixed-halide CsPb(Br/I)3 perovskite quantum dots (QDs) are regarded as one of the most promising candidates for pure-red perovskite light-emitting diodes (PeLEDs) due to their precise spectral tuning property. However, the lead-rich surface of these QDs usually results in halide ion migration and nonradiative recombination loss, which remains a great challenge for high-performance PeLEDs. To solve the above issues, we employ a chelating agent of 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraacetic acid hydrate (DOTA) to polish the lead-rich surface of the QDs and meanwhile introduce a new ligand of 2,3-dimercaptosuccinic acid (DMSA) to passivate surface defects of the QDs. This synchronous post-treatment strategy results in high-quality CsPb(Br/I)3 QDs with suppressed halide ion migration and an improved photoluminescence quantum yield, which enables us to fabricate spectrally stable pure-red PeLEDs with a peak external quantum efficiency of 23.2%, representing one of the best performance pure-red PeLEDs based on mixed-halide CsPb(Br/I)3 QDs reported to date.
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Affiliation(s)
- Xin Zhou
- National & Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices, South China University of Technology, Guangzhou 510641, China
- Guangdong Provincial Key Laboratory of Semiconductor Micro Display, Foshan Nationstar Optoelectronics Company Ltd., Foshan 528000, China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China
| | - Chao Shen
- Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou 510632, China
| | - Linyuan Lian
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Lintao Hou
- Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou 510632, China
| | - Jibin Zhang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
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6
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Feng Y, Li H, Zhu M, Gao Y, Cai Q, Lu G, Dai X, Ye Z, He H. Nucleophilic Reaction-Enabled Chloride Modification on CsPbI 3 Quantum Dots for Pure Red Light-Emitting Diodes with Efficiency Exceeding 26 . Angew Chem Int Ed Engl 2024; 63:e202318777. [PMID: 38258990 DOI: 10.1002/anie.202318777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2023] [Indexed: 01/24/2024]
Abstract
High-performance pure red perovskite light-emitting diodes (PeLEDs) with an emission wavelength shorter than 650 nm are ideal for wide-color-gamut displays, yet remain an unprecedented challenge to progress. Mixed-halide CsPb(Br/I)3 emitter-based PeLEDs suffer spectral stability induced by halide phase segregation and CsPbI3 quantum dots (QDs) suffer from a compromise between emission wavelength and electroluminescence efficiency. Here, we demonstrate efficient pure red PeLEDs with an emission centered at 638 nm based on PbClx -modified CsPbI3 QDs. A nucleophilic reaction that releases chloride ions and manipulates the ligand equilibrium of the colloidal system is developed to synthesize the pure red emission QDs. The comprehensive structural and spectroscopic characterizations evidence the formation of PbClx outside the CsPbI3 QDs, which regulates exciton recombination and prevents the exciton from dissociation induced by surface defects. In consequence, PeLEDs based on PbClx -modified CsPbI3 QDs with superior optoelectronic properties demonstrate stable electroluminescence spectra at high driving voltages, a record external quantum efficiency of 26.1 %, optimal efficiency roll-off of 16.0 % at 1000 cd m-2 , and a half lifetime of 7.5 hours at 100 cd m-2 , representing the state-of-the-art pure red PeLEDs. This work provides new insight into constructing the carrier-confined structure on perovskite QDs for high-performance PeLEDs.
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Affiliation(s)
- Yifeng Feng
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Hongjin Li
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Meiyi Zhu
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, 325006, China
| | - Yun Gao
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Qiuting Cai
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Guochao Lu
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Xingliang Dai
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi, 030000, China
| | - Zhizhen Ye
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi, 030000, China
| | - Haiping He
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi, 030000, China
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7
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Shen X, Wang Z, Chen L, Wei J, Ouyang Q. Enhanced Photoelectric Properties of CsPbBr 3 by SiO 2 and TiO 2 Bilayer Heterostructures. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024; 40:2719-2728. [PMID: 38277777 DOI: 10.1021/acs.langmuir.3c03334] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/28/2024]
Abstract
CsPbBr3/SiO2 heterostructures were synthesized by the hydrolysis reaction of a mixture of CsPbBr3 nanocrystals (NCs) and (3-aminopropyl)triethoxysilane (APTS) in air. Compared with CsPbBr3 NCs, the CsPbBr3/SiO2 heterostructures exhibit stronger photoluminescence (PL) intensity, longer lifetime of PL (∼40.5 ns), and higher PL-quantum yield (PLQY, ∼86%). The carrier dynamics of CsPbBr3/SiO2 was detected by the transient absorption (TA) spectrum. The experimental results show that SiO2 passivates the surface traps of CsPbBr3 NCs and enhances the PL intensity. However, photoelectrochemical impedance spectra (PEIS) demonstrate that the impedance of CsPbBr3/SiO2 is higher than that of CsPbBr3 NCs, which reduces carrier transport and extraction. Because the application of CsPbBr3/SiO2 in optoelectronics is limited, CsPbBr3/SiO2/TiO2 heterostructures were synthesized by the further reaction of tetrabutyl titanate (TBT). The TiO2 coating can reduce the impedance of the CsPbBr3/SiO2. Importantly, ∼68% of the PL intensity of CsPbBr3/SiO2 is retained. Compared with CsPbBr3/SiO2 and CsPbBr3 NCs, the CsPbBr3/SiO2/TiO2 demonstrates faster carrier transport (κct = 2.4 × 109 s-1) and higher photocurrent density (J = 76 nA cm-2). In addition, CsPbBr3/SiO2/TiO2 shows good stability under (ultraviolet) UV irradiation, along with water stability and thermal stability. Therefore, the double protection approach can enhance the stability of CsPbBr3 NCs and tune the optoelectronic properties of CsPbBr3 NCs.
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Affiliation(s)
- Xiong Shen
- Key Laboratory of Photonic Materials and Devices Physics for Oceanic Applications, Ministry of Industry and Information Technology of China, College of Physics and Optoelectronic Engineering, Harbin Engineering University, Harbin 150001, China
- Key Laboratory of In-Fiber Integrated Optics of Ministry of Education, College of Physics and Optoelectronic Engineering, Harbin Engineering University, Harbin 150001, China
| | - Zhongming Wang
- Key Laboratory of Photonic Materials and Devices Physics for Oceanic Applications, Ministry of Industry and Information Technology of China, College of Physics and Optoelectronic Engineering, Harbin Engineering University, Harbin 150001, China
- Key Laboratory of In-Fiber Integrated Optics of Ministry of Education, College of Physics and Optoelectronic Engineering, Harbin Engineering University, Harbin 150001, China
| | - Lin Chen
- Key Laboratory of Photonic Materials and Devices Physics for Oceanic Applications, Ministry of Industry and Information Technology of China, College of Physics and Optoelectronic Engineering, Harbin Engineering University, Harbin 150001, China
- Key Laboratory of In-Fiber Integrated Optics of Ministry of Education, College of Physics and Optoelectronic Engineering, Harbin Engineering University, Harbin 150001, China
| | - Jinhe Wei
- Key Laboratory of Photonic Materials and Devices Physics for Oceanic Applications, Ministry of Industry and Information Technology of China, College of Physics and Optoelectronic Engineering, Harbin Engineering University, Harbin 150001, China
- Key Laboratory of In-Fiber Integrated Optics of Ministry of Education, College of Physics and Optoelectronic Engineering, Harbin Engineering University, Harbin 150001, China
| | - Qiuyun Ouyang
- Key Laboratory of Photonic Materials and Devices Physics for Oceanic Applications, Ministry of Industry and Information Technology of China, College of Physics and Optoelectronic Engineering, Harbin Engineering University, Harbin 150001, China
- Key Laboratory of In-Fiber Integrated Optics of Ministry of Education, College of Physics and Optoelectronic Engineering, Harbin Engineering University, Harbin 150001, China
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8
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Zhang K, Su Z, Shen Y, Cao LX, Zeng XY, Feng SC, Yu Y, Gao X, Tang JX, Li Y. Top-Down Exfoliation Process Constructing 2D/3D Heterojunction toward Ultrapure Blue Perovskite Light-Emitting Diodes. ACS NANO 2024; 18:4570-4578. [PMID: 38277481 DOI: 10.1021/acsnano.3c12433] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/28/2024]
Abstract
3D perovskites with low energy disorder and high ambipolar charge mobility represent a promising solution for efficient and bright light-emitting diodes. However, the challenges of regulating the nanocrystal size to trigger the quantum confinement effect and control the surface trap states to reduce charge loss hinder the applications of 3D perovskites in blue perovskite light-emitting diodes (PeLEDs). In this study, we present a top-down exfoliation method to obtain blue 3D perovskite films with clipped nanocrystals and tunable bandgaps by employing methyl cyanide (MeCN) for post-treatment. In this method, the MeCN solvent exfoliates the surface components of the 3D perovskite grains through a partial dissolution process. Moreover, the dissolved precursor can be further utilized to construct an ingenious 2D/3D heterostructure by incorporating an organic spacer into the MeCN solvent, contributing to efficient defect passivation and improved energy transfer. Consequently, efficient PeLEDs featuring ultrapure blue emission at 478 nm achieve a record external quantum efficiency of 12.3% among their 3D counterparts. This work emphasizes the significance of inducing the quantum confinement effect in 3D perovskites for efficient blue PeLEDs and provides a viable scheme for the in situ regulation of perovskite crystals.
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Affiliation(s)
- Kai Zhang
- Macao Institute of Materials Science and Engineering (MIMSE), Faculty of Innovation Engineering, Macau University of Science and Technology, Taipa 999078, Macao, People's Republic of China
| | - Zhenhuang Su
- Shanghai Synchrotron Radiation Facility, Zhangjiang Laboratory, Chinese Academy of Sciences, Shanghai 200241, People's Republic ofChina
| | - Yang Shen
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, People's Republic ofChina
| | - Long-Xue Cao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, People's Republic ofChina
| | - Xin-Yi Zeng
- Macao Institute of Materials Science and Engineering (MIMSE), Faculty of Innovation Engineering, Macau University of Science and Technology, Taipa 999078, Macao, People's Republic of China
| | - Shi-Chi Feng
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, People's Republic ofChina
| | - Yi Yu
- School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic ofChina
| | - Xingyu Gao
- Shanghai Synchrotron Radiation Facility, Zhangjiang Laboratory, Chinese Academy of Sciences, Shanghai 200241, People's Republic ofChina
| | - Jian-Xin Tang
- Macao Institute of Materials Science and Engineering (MIMSE), Faculty of Innovation Engineering, Macau University of Science and Technology, Taipa 999078, Macao, People's Republic of China
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, People's Republic ofChina
| | - Yanqing Li
- School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic ofChina
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9
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Jang G, Jo DY, Ma S, Lee J, Son J, Lee CU, Jeong W, Yang S, Park JH, Yang H, Moon J. Core-Shell Perovskite Quantum Dots for Highly Selective Room-Temperature Spin Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309335. [PMID: 37996975 DOI: 10.1002/adma.202309335] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 11/09/2023] [Indexed: 11/25/2023]
Abstract
Circularly polarized light (CPL) is a crucial light source with a wide variety of potential applications such as magnetic recording, and 3D display. Here, core-shell heterostructured perovskite quantum dots (QDs) for room-temperature spin-polarized light-emitting diodes (spin-LEDs) are developed. Specifically, a 2D chiral perovskite shell is deposited onto the achiral 3D inorganic perovskite (CsPbBr3 ) core. Owing to the chiral-induced spin selectivity effect, the spin state of the injected charge carriers is biased when they are transmitted through the 2D chiral shell. The spin-controlled carriers then radiatively recombine inside the CsPbBr3 emissive core, resulting in CPL emission. It is demonstrated that the (R)- and (S)-1-(2-(naphthyl)ethylamine) (R-/S-NEA) 2D chiral cations enhance the spin polarization degree due to their strong chiroptical properties. Systematical defect analyses confirm that 2D chiral cations (i.e., R-/S-NEA) successfully passivate halide vacancies at the surface of the CsPbBr3 QDs, thereby attaining a high photoluminescence quantum yield of 78%. Moreover, the spin-LEDs prepared with core-shell QDs achieve a maximum external quantum efficiency of 5.47% and circularly polarized electroluminescence with a polarization degree (PCP-EL ) of 12% at room temperature. Finally, various patterns fabricated by inkjet printing the core-shell QDs emit strong CPL, highlighting their potential as an emitter for next-generation displays.
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Affiliation(s)
- Gyumin Jang
- Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Dae-Yeon Jo
- Department of Materials Science and Engineering, Hongik University, Seoul, 04066, Republic of Korea
| | - Sunihl Ma
- Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea
- Department of Chemical Engineering, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Junwoo Lee
- Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Jaehyun Son
- Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Chan Uk Lee
- Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Wooyong Jeong
- Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Seongyeon Yang
- Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Jeong Hyun Park
- Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Heesun Yang
- Department of Materials Science and Engineering, Hongik University, Seoul, 04066, Republic of Korea
| | - Jooho Moon
- Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea
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10
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Kim D, Yun T, An S, Lee CL. How to improve the structural stabilities of halide perovskite quantum dots: review of various strategies to enhance the structural stabilities of halide perovskite quantum dots. NANO CONVERGENCE 2024; 11:4. [PMID: 38279984 PMCID: PMC10821855 DOI: 10.1186/s40580-024-00412-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2023] [Accepted: 01/08/2024] [Indexed: 01/29/2024]
Abstract
Halide perovskites have emerged as promising materials for various optoelectronic devices because of their excellent optical and electrical properties. In particular, halide perovskite quantum dots (PQDs) have garnered considerable attention as emissive materials for light-emitting diodes (LEDs) because of their higher color purities and photoluminescence quantum yields compared to conventional inorganic quantum dots (CdSe, ZnSe, ZnS, etc.). However, PQDs exhibit poor structural stabilities in response to external stimuli (moisture, heat, etc.) owing to their inherent ionic nature. This review presents recent research trends and insights into improving the structural stabilities of PQDs. In addition, the origins of the poor structural stabilities of PQDs and various methods to overcome this drawback are discussed. The structural degradation of PQDs is mainly caused by two mechanisms: (1) defect formation on the surface of the PQDs by ligand dissociation (i.e., detachment of weakly bound ligands from the surface of PQDs), and (2) vacancy formation by halide migration in the lattices of the PQDs due to the low migration energy of halide ions. The structural stabilities of PQDs can be improved through four methods: (1) ligand modification, (2) core-shell structure, (3) crosslinking, and (4) metal doping, all of which are presented in detail herein. This review provides a comprehensive understanding of the structural stabilities and opto-electrical properties of PQDs and is expected to contribute to future research on improving the device performance of perovskite quantum dot LEDs (PeLEDs).
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Affiliation(s)
- Dokyum Kim
- Advanced Photonics Research Institute (APRI), Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
| | - Taesun Yun
- Advanced Photonics Research Institute (APRI), Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
- Department of Physics, Research Institute of Physics and Chemistry, Jeonbuk National University, Jeonju, 54896, Republic of Korea
| | - Sangmin An
- Department of Physics, Research Institute of Physics and Chemistry, Jeonbuk National University, Jeonju, 54896, Republic of Korea
| | - Chang-Lyoul Lee
- Advanced Photonics Research Institute (APRI), Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea.
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11
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Ghorbani A, Chen J, Chun P, Lyu Q, Cotella G, Aziz H. Changes in Hole and Electron Injection under Electrical Stress and the Rapid Electroluminescence Loss in Blue Quantum-Dot Light-Emitting Devices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2304580. [PMID: 37653596 DOI: 10.1002/smll.202304580] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2023] [Revised: 08/17/2023] [Indexed: 09/02/2023]
Abstract
Blue quantum dot light-emitting devices (QLEDs) suffer from fast electroluminescence (EL) loss when under electrical bias. Here, it is identified that the fast EL loss in blue QLEDs is not due to a deterioration in the photoluminescence quantum yield of the quantum dots (QDs), contrary to what is commonly believed, but rather arises primarily from changes in charge injection overtime under the bias that leads to a deterioration in charge balance. Measurements on hole-only and electron-only devices show that hole injection into blue QDs increases over time whereas electron injection decreases. Results also show that the changes are associated with changes in hole and electron trap densities. The results are further verified using QLEDs with blue and red QDs combinations, capacitance versus voltage, and versus time characteristics of the blue QLEDs. The changes in charge injection are also observed to be partially reversible, and therefore using pulsed current instead of constant current bias for driving the blue QLEDs leads to an almost 2.5× longer lifetime at the same initial luminance. This work systematically investigates the origin of blue QLEDs EL loss and provides insights for designing improved blue QDs paving the way for QLEDs technology commercialization.
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Affiliation(s)
- Atefeh Ghorbani
- Department of Electrical and Computer Engineering and Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario, N2L 3G1, Canada
| | - Junfei Chen
- Department of Electrical and Computer Engineering and Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario, N2L 3G1, Canada
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, China
| | - Peter Chun
- Ottawa IC Laboratory, Huawei Canada, 19 Allstate Parkway, Markham, Ontario, L3R 5B4, Canada
| | - Quan Lyu
- Ipswich Research Centre, Huawei Technologies Research & Development (UK) Ltd., Phoenix House (B55), Adastral Park, Ipswich, IP5 3RE, UK
| | - Giovanni Cotella
- Ipswich Research Centre, Huawei Technologies Research & Development (UK) Ltd., Phoenix House (B55), Adastral Park, Ipswich, IP5 3RE, UK
| | - Hany Aziz
- Department of Electrical and Computer Engineering and Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario, N2L 3G1, Canada
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Zhao C, Zhu C, Yu Y, Xue W, Liu X, Yuan F, Dai J, Wang S, Jiao B, Wu Z. Multifunctional Short-Chain 2-Thiophenealkylammonium Bromide Ligand-Assisted Perovskite Quantum Dots for Efficient Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2023; 15:40080-40087. [PMID: 37578891 DOI: 10.1021/acsami.3c08008] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Abstract
Lead halide perovskite quantum dots (QDs) have attracted great interest for application in light-emitting diodes (LEDs) due to their high photoluminescence quantum yield (PLQY), solution processability, and high color purity, showing great potential for next-generation full-color display and lighting technologies. Conventional long-chain insulating oleic acid (OA)/oleamine (OAm) ligands exhibit dynamic binding to the surface of QDs, resulting in a plethora of extra surface defects and inferior optoelectronic properties. Herein, a sole multifunctional ligand with optimized carbon chain length, that is, 2-thiophenepropylamine bromide (ThPABr), was creatively designed and introduced into CsPbBr3 QDs, which not only replaces OAm and provides a bromine source but also coordinates with the uncoordinated surface Pb2+ of QDs through the thiophene, passivating surface defects and increasing the PLQY of the film to 83%. More importantly, the interaction between the electron donor-thiophene ring and QDs can enhance electron injection and improve carrier balance. The resulting green LED exhibited significant performance improvement, showing ultrahigh spectral stability under high operating voltage, achieving a maximum external quantum efficiency of 10.5%, and extending the operating lifetime to 5-fold that of the reference. Designing a single multifunctional ligand presents a promising and convenient strategy for selecting surface ligands that can enhance the performance of LEDs or other optoelectronic devices.
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Affiliation(s)
- Chenjing Zhao
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Chunrong Zhu
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Yue Yu
- School of Optoelectronic Engineering, Xidian University, Xi'an 710071, Shaanxi China
| | - Wenhao Xue
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Xiaoyun Liu
- Instrumental Analysis Center of Xi'an Jiaotong University, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Fang Yuan
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Jinfei Dai
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Shuangpeng Wang
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR 999078, China
| | - Bo Jiao
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Zhaoxin Wu
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
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13
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Chen K, Gu Z, Wang Z, Guan M, Tan X, Xu W, Ji X, Lu W, Liu Y, Li G. Surface polarization-induced emission and stability enhancement of CsPbX 3 nanocrystals. Chem Sci 2023; 14:8914-8923. [PMID: 37621427 PMCID: PMC10445435 DOI: 10.1039/d3sc02109b] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/25/2023] [Accepted: 07/25/2023] [Indexed: 08/26/2023] Open
Abstract
Recently, the polarization effect has been receiving tremendous attention, as it can result in improved stability and charge transfer efficiency of metal-halide perovskites (MHPs). However, realizing the polarization effect on CsPbX3 NCs still remains a challenge. Here, metal ions with small radii (such as Mg2+, Li+, Ni2+, etc.) are introduced on the surface of CsPbX3 NCs, which facilitate the arising of electric dipole and surface polarization. The surface polarization effect promotes redistribution of the surface electron density, leading to reinforced surface ligand bonding, reduced surface defects, near unity photoluminescence quantum yields (PLQYs), and enhanced stability. Moreover, further introduction of hydroiodic acid results in the in situ formation of tert-butyl iodide (TBI), which facilitates the successful synthesis of pure iodine-based CsPbI3 NCs with high PLQY (95.3%) and stability under ambient conditions. The results of this work provide sufficient evidence to exhibit the crucial role of the surface polarization effect, which promotes the synthesis of high-quality MHPs and their applications in the fields of optoelectronic devices.
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Affiliation(s)
- Keqiang Chen
- Faculty of Materials Science and Chemistry, China University of Geosciences Wuhan 430074 P. R. China
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, State Key Laboratory of Silicate Materials for Architectures, School of Materials Science and Engineering, Wuhan University of Technology Wuhan 430070 P. R. China
- Zhejiang Institute, China University of Geosciences Hangzhou 311305 China
- Shenzhen Research Institute, China University of Geosciences Shenzhen 518052 China
| | - Zixin Gu
- Faculty of Materials Science and Chemistry, China University of Geosciences Wuhan 430074 P. R. China
| | - Zhiqing Wang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, State Key Laboratory of Silicate Materials for Architectures, School of Materials Science and Engineering, Wuhan University of Technology Wuhan 430070 P. R. China
| | - Mengyu Guan
- Faculty of Materials Science and Chemistry, China University of Geosciences Wuhan 430074 P. R. China
| | - Xiu Tan
- Faculty of Materials Science and Chemistry, China University of Geosciences Wuhan 430074 P. R. China
| | - Wanqing Xu
- Faculty of Materials Science and Chemistry, China University of Geosciences Wuhan 430074 P. R. China
| | - Xinyu Ji
- Faculty of Materials Science and Chemistry, China University of Geosciences Wuhan 430074 P. R. China
| | - Weiqi Lu
- Faculty of Materials Science and Chemistry, China University of Geosciences Wuhan 430074 P. R. China
| | - Yueli Liu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, State Key Laboratory of Silicate Materials for Architectures, School of Materials Science and Engineering, Wuhan University of Technology Wuhan 430070 P. R. China
| | - Guogang Li
- Faculty of Materials Science and Chemistry, China University of Geosciences Wuhan 430074 P. R. China
- Zhejiang Institute, China University of Geosciences Hangzhou 311305 China
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14
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Yang K, Zheng J, Mao J, Zhao H, Ju S, Zhang Q, Lin Z, Yu Y, Li F. Interface-Induced Crystallinity Enhancement of Perovskite Quantum Dots for Highly Efficient Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2023; 15:40062-40069. [PMID: 37552832 DOI: 10.1021/acsami.3c07302] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/10/2023]
Abstract
Perovskite quantum dot light-emitting diodes (QLEDs) with high color purity and wide color gamut have good application prospects in the next generation of display technology. However, colloidal perovskite quantum dots (PQDs) may introduce a large number of defects during the film-forming process, which is not conducive to the luminous efficiency of the device. Meanwhile, the disordered film formation of PQDs will form interfacial defects and reduce the device performance. Here, we report an interface-induced crystallinity enhancement (IICE) strategy to increase the crystallinity of PQDs at the hole transport layer (HTL)/PQD interface. As a result, both the Br- vacancies in the PQD film and the interfacial defects were well passivated and the leakage current was also suppressed. We achieved QLEDs with a maximum external quantum efficiency (EQE) of 16.45% and current efficiency (CE) of 61.77 cd/A, showing improved performance to more than twice that of the control devices. The IICE strategy paves a new way to enhance the crystallinity of PQD films, so as to improve the performance of QLEDs for application in the future display field.
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Affiliation(s)
- Kaiyu Yang
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, People's Republic of China
| | - Jinping Zheng
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
| | - Jinliang Mao
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
| | - Haobing Zhao
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
| | - Songman Ju
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
| | - QingKai Zhang
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
| | - Zhihan Lin
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
| | - Yongshen Yu
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, People's Republic of China
| | - Fushan Li
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, People's Republic of China
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15
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Chen K, Zhang D, Du Q, Hong W, Liang Y, Duan X, Feng S, Lan L, Wang L, Chen J, Ma D. Synergistic Halide- and Ligand-Exchanges of All-Inorganic Perovskite Nanocrystals for Near-Unity and Spectrally Stable Red Emission. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2337. [PMID: 37630921 PMCID: PMC10458086 DOI: 10.3390/nano13162337] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Revised: 08/06/2023] [Accepted: 08/11/2023] [Indexed: 08/27/2023]
Abstract
All-inorganic perovskite nanocrystals (NCs) of CsPbX3 (X = Cl, Br, I) are promising for displays due to wide color gamut, narrow emission bandwidth, and high photoluminescence quantum yield (PLQY). However, pure red perovskite NCs prepared by mixing halide ions often result in defects and spectral instabilities. We demonstrate a method to prepare stable pure red emission and high-PLQY-mixed-halide perovskite NCs through simultaneous halide-exchange and ligand-exchange. CsPbBr3 NCs with surface organic ligands are first synthesized using the ligand-assisted reprecipitation (LARP) method, and then ZnI2 is introduced for anion exchange to transform CsPbBr3 to CsPbBrxI3-x NCs. ZnI2 not only provides iodine ions but also acts as an inorganic ligand to passivate surface defects and prevent ion migration, suppressing non-radiative losses and halide segregation. The luminescence properties of CsPbBrxI3-x NCs depend on the ZnI2 content. By regulating the ZnI2 exchange process, red CsPbBrxI3-x NCs with organic/inorganic hybrid ligands achieve near-unity PLQY with a stable emission peak at 640 nm. The CsPbBrxI3-x NCs can be combined with green CsPbBr3 NCs to construct white light-emitting diodes with high-color gamut. Our work presents a facile ion exchange strategy for preparing spectrally stable mixed-halide perovskite NCs with high PLQY, approaching the efficiency limit for display or lighting applications.
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Affiliation(s)
- Kaiwang Chen
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou 510640, China; (K.C.); (D.Z.); (Q.D.); (W.H.); (Y.L.); (X.D.); (S.F.); (L.L.)
| | - Dengliang Zhang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou 510640, China; (K.C.); (D.Z.); (Q.D.); (W.H.); (Y.L.); (X.D.); (S.F.); (L.L.)
| | - Qing Du
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou 510640, China; (K.C.); (D.Z.); (Q.D.); (W.H.); (Y.L.); (X.D.); (S.F.); (L.L.)
| | - Wei Hong
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou 510640, China; (K.C.); (D.Z.); (Q.D.); (W.H.); (Y.L.); (X.D.); (S.F.); (L.L.)
| | - Yue Liang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou 510640, China; (K.C.); (D.Z.); (Q.D.); (W.H.); (Y.L.); (X.D.); (S.F.); (L.L.)
| | - Xingxing Duan
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou 510640, China; (K.C.); (D.Z.); (Q.D.); (W.H.); (Y.L.); (X.D.); (S.F.); (L.L.)
| | - Shangwei Feng
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou 510640, China; (K.C.); (D.Z.); (Q.D.); (W.H.); (Y.L.); (X.D.); (S.F.); (L.L.)
| | - Linfeng Lan
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou 510640, China; (K.C.); (D.Z.); (Q.D.); (W.H.); (Y.L.); (X.D.); (S.F.); (L.L.)
| | - Lei Wang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China;
| | - Jiangshan Chen
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou 510640, China; (K.C.); (D.Z.); (Q.D.); (W.H.); (Y.L.); (X.D.); (S.F.); (L.L.)
| | - Dongge Ma
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou 510640, China; (K.C.); (D.Z.); (Q.D.); (W.H.); (Y.L.); (X.D.); (S.F.); (L.L.)
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16
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Lin Q, Zhu Y, Wang Y, Li D, Zhao Y, Liu Y, Li F, Huang W. Flexible Quantum Dot Light-Emitting Device for Emerging Multifunctional and Smart Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210385. [PMID: 36880739 DOI: 10.1002/adma.202210385] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2022] [Revised: 02/13/2023] [Indexed: 06/18/2023]
Abstract
Quantum dot light-emitting diodes (QLEDs), owing to their exceptional performances in device efficiency, color purity/tunability in the visible region and solution-processing ability on various substrates, become a potential candidate for flexible and ultrathin electroluminescent (EL) lighting and display. Moreover, beyond the lighting and display, flexible QLEDs are enabled with endless possibilities in the era of the internet of things and artificial intelligence by acting as input/output ports in wearable integrated systems. Challenges remain in the development of flexible QLEDs with the goals for high performance, excellent flexibility/even stretchability, and emerging applications. In this paper, the recent developments of QLEDs including quantum dot materials, working mechanism, flexible/stretchable strategies and patterning strategies, and highlight its emerging multifunctional integrations and smart applications covering wearable optical medical devices, pressure-sensing EL devices, and neural smart EL devices, are reviewed. The remaining challenges are also summarized and an outlook on the future development of flexible QLEDs made. The review is expected to offer a systematic understanding and valuable inspiration for flexible QLEDs to simultaneously satisfy optoelectronic and flexible properties for emerging applications.
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Affiliation(s)
- Qinghong Lin
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Yangbin Zhu
- School of Intelligent Manufacturing and Electronic Engineering, Wenzhou University of Technology, Wenzhou, 325035, P. R. China
| | - Yue Wang
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Deli Li
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Yi Zhao
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Yang Liu
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Fushan Li
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, P. R. China
| | - Wei Huang
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
- Frontiers Science Center for Flexible Electronics (FSCFE), MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), Xi'an, 710072, P. R. China
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, 211816, P. R. China
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Liu L, Piao J, Wang Y, Liu C, Chen J, Cao K, Chen S. Trifunctional Trichloroacetic Acid Incorporated Mixed-Halide Perovskites for Spectrally Stable Blue Light-Emitting Diodes. J Phys Chem Lett 2023; 14:4734-4741. [PMID: 37184086 DOI: 10.1021/acs.jpclett.3c01028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Metal halide perovskites have won great recognition in light-emitting diodes (LEDs). Nevertheless, the development of blue perovskite LEDs is facing a bottleneck in improving the device performance. Although mixed chloride/bromide perovskites can achieve pure-blue emission straightforwardly, higher chloride content will induce the challenges of low photoluminescence quantum yield and poor spectra stability resulting from the chloride vacancy defects and resultant halide ion migration under an electric field. In this work, we introduce a reliable trifunctional additive trichloroacetic acid into mixed-halide perovskites, which can provide additional chloride to fill halide vacancies, passivate the uncoordinated Pb2+ ion defects, and promote the crystallization effectively. Owning to the utilization of trichloroacetic acid, the ultimate pure-blue perovskite LED obtains stable electroluminescent spectra at 477 nm under various bias and demonstrates a 5-fold external quantum efficiency improvement (up to 6.6%).
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Affiliation(s)
- Lihui Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
| | - Junxian Piao
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
| | - Yun Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
| | - Chenxi Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
| | - Jian Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
| | - Kun Cao
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
| | - Shufen Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
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18
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Rivera Medina MJ, Di Mario L, Kahmann S, Xi J, Portale G, Bongiovanni G, Mura A, Alonso Huitrón JC, Loi MA. Tuning the energy transfer in Ruddlesden-Popper perovskites phases through isopropylammonium addition - towards efficient blue emitters. NANOSCALE 2023; 15:6673-6685. [PMID: 36929178 DOI: 10.1039/d3nr00087g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Here we demonstrate blue LEDs with a peak wavelength of 481 nm, with outstanding colour purity of up to 88% (CIE coordinates (0.1092, 0.1738)), an external quantum yield of 5.2% and a luminance of 8260 cd m-2. These devices are based on quasi-2D PEA2(Cs0.75MA0.25)Pb2Br7, which is cast from solutions containing isopropylammonium (iPAm). iPAm as additive assist in supressing the formation of bulk-like phases, as pointed out by both photophysical and structural characterization. Additionally, the study of the excitation dynamics demonstrates a hindering of the energy transfer to domains of lower energy that generally undermines the performance and emission characteristics of blue-emitting LEDs based on quasi-2D perovskites. The achieved narrow distribution of quantum well sizes and the hindered energy transfer result in a thin film photoluminescence quantum yield exceeding 60%. Our work demonstrates the great potential to tailor the composition and the structure of thin films based on Ruddlesden-Popper phases to boost performance of optoelectronic devices - specifically blue perovskite LEDs.
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Affiliation(s)
- Martha Judith Rivera Medina
- Photophysics & Optoelectronics group, Zernike Institute of Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG, Groningen, The Netherlands.
- Departamento de Materia Condensada y Criogenia. Instituto de Investigaciones en Materiales. Universidad Nacional Autónoma de México. Ciudad Universitaria, A.P. 70-360, Coyoacán, 04510, Mexico City, Mexico
| | - Lorenzo Di Mario
- Photophysics & Optoelectronics group, Zernike Institute of Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG, Groningen, The Netherlands.
| | - Simon Kahmann
- Photophysics & Optoelectronics group, Zernike Institute of Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG, Groningen, The Netherlands.
| | - Jun Xi
- Photophysics & Optoelectronics group, Zernike Institute of Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG, Groningen, The Netherlands.
| | - Giuseppe Portale
- Macromolecular Chemistry and New Polymeric Material, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
| | - Giovanni Bongiovanni
- Dipartimento di Fisica, Università degli Studi di Cagliari, cittadella universitaria 09040, Monserrato, Cagliari, Italy
| | - Andrea Mura
- Dipartimento di Fisica, Università degli Studi di Cagliari, cittadella universitaria 09040, Monserrato, Cagliari, Italy
| | - Juan Carlos Alonso Huitrón
- Departamento de Materia Condensada y Criogenia. Instituto de Investigaciones en Materiales. Universidad Nacional Autónoma de México. Ciudad Universitaria, A.P. 70-360, Coyoacán, 04510, Mexico City, Mexico
| | - Maria Antonietta Loi
- Photophysics & Optoelectronics group, Zernike Institute of Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG, Groningen, The Netherlands.
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19
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Yang L, Shan Q, Zhang S, Zhou Y, Li Y, Zou Y, Zeng H. Improving anion-exchange efficiency and spectrum stability of perovskite quantum dots via an Al 3+ bonding-doping synergistic effect. NANOSCALE 2023; 15:5696-5704. [PMID: 36804729 DOI: 10.1039/d2nr07091j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Anion-exchange reactions are recognized as a vital and facile post-synthesis method to precisely manipulate the emission spectra of perovskite quantum dots (QDs). However, the anion-exchange process often induces adverse structural evolution and trap-mediated mechanisms, so mixed-halide perovskite QDs suffer inefficient anion exchange and poor spectra-stability issues, which limits access to high-quality primary color perovskite QDs for display applications. Here we report an Al3+ bonding-doping synergistic strategy for manufacturing stable mixed Br/Cl deep-blue perovskite QDs. By doping Al3+ into perovskite QDs, highly-efficient Cl- anion exchange and a large-range blue shift of the PL spectrum (∼62 nm with only 0.1 mmol of Cl feed) can be easily achieved. Notably, the Al3+-mediated deep-blue emission sample exhibits superior stability against moisture and electric fields. It also shows an elevated valence band maximum level. Based on the anion-exchanged QDs, a spectrum-stable deep-blue QLED with an EQE of 1.38% at 463 nm is achieved. Our findings demonstrate a feasible and promising strategy for developing high-performance deep-blue perovskite materials and optoelectronic devices.
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Affiliation(s)
- Linxiang Yang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Qingsong Shan
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Shuai Zhang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Yihui Zhou
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Yan Li
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Yousheng Zou
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
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20
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Liu L, Bai B, Yang X, Du Z, Jia G. Anisotropic Heavy-Metal-Free Semiconductor Nanocrystals: Synthesis, Properties, and Applications. Chem Rev 2023; 123:3625-3692. [PMID: 36946890 DOI: 10.1021/acs.chemrev.2c00688] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/23/2023]
Abstract
Heavy-metal (Cd, Hg, and Pb)-containing semiconductor nanocrystals (NCs) have been explored widely due to their unique optical and electrical properties. However, the toxicity risks of heavy metals can be a drawback of heavy-metal-containing NCs in some applications. Anisotropic heavy-metal-free semiconductor NCs are desirable replacements and can be realized following the establishment of anisotropic growth mechanisms. These anisotropic heavy-metal-free semiconductor NCs can possess lower toxicity risks, while still exhibiting unique optical and electrical properties originating from both the morphological and compositional anisotropy. As a result, they are promising light-emitting materials in use various applications. In this review, we provide an overview on the syntheses, properties, and applications of anisotropic heavy-metal-free semiconductor NCs. In the first section, we discuss hazards of heavy metals and introduce the typical heavy-metal-containing and heavy-metal-free NCs. In the next section, we discuss anisotropic growth mechanisms, including solution-liquid-solid (SLS), oriented attachment, ripening, templated-assisted growth, and others. We discuss mechanisms leading both to morphological anisotropy and to compositional anisotropy. Examples of morphological anisotropy include growth of nanorods (NRs)/nanowires (NWs), nanotubes, nanoplatelets (NPLs)/nanosheets, nanocubes, and branched structures. Examples of compositional anisotropy, including heterostructures and core/shell structures, are summarized. Third, we provide insights into the properties of anisotropic heavy-metal-free NCs including optical polarization, fast electron transfer, localized surface plasmon resonances (LSPR), and so on, which originate from the NCs' anisotropic morphologies and compositions. Finally, we summarize some applications of anisotropic heavy-metal-free NCs including catalysis, solar cells, photodetectors, lighting-emitting diodes (LEDs), and biological applications. Despite the huge progress on the syntheses and applications of anisotropic heavy-metal-free NCs, some issues still exist in the novel anisotropic heavy-metal-free NCs and the corresponding energy conversion applications. Therefore, we also discuss the challenges of this field and provide possible solutions to tackle these challenges in the future.
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Affiliation(s)
- Long Liu
- Key Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, School of Materials Science and Engineering, and Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
| | - Bing Bai
- Key Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, School of Materials Science and Engineering, and Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, P. R. China
| | - Zuliang Du
- Key Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, School of Materials Science and Engineering, and Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
| | - Guohua Jia
- School of Molecular and Life Sciences, Curtin University, Perth, WA 6102, Australia
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21
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Liu A, Bi C, Li J, Zhang M, Cheng C, Binks D, Tian J. High Color-Purity and Efficient Pure-Blue Perovskite Light-Emitting Diodes Based on Strongly Confined Monodispersed Quantum Dots. NANO LETTERS 2023; 23:2405-2411. [PMID: 36881120 DOI: 10.1021/acs.nanolett.3c00548] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Here, we develop an in situ photoluminescence (PL) system to monitor the nucleation and growth of perovskite nanocrystals and control the monomer supply rate to achieve strongly confined and monodispersed quantum dots (QDs) with average size of 3.4 nm. Pure-blue (460 nm wavelength) CsPbBr3 QDs with near unity PL quantum yield and narrow size distribution (small size dispersion of 9.6%) were thus produced. Light-emitting diodes (LEDs) based on these QDs were prepared by using an all-solution processing route, which showed narrow electroluminescence with full width at half-maximum of 20 nm and a high color purity of 97.3%. The device also had a high external quantum efficiency of 10.1%, maximum luminance of 11 610 cd m-2, and continuous operation lifetime of 21 h at the initial luminance of 102 cd m-2, corresponding to the state-of-art for pure-blue perovskite LEDs.
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Affiliation(s)
- Aqiang Liu
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, P. R. China
- Shunde Innovation School, University of Science and Technology Beijing, Foshan 528399, Guangdong, P. R. China
| | - Chenghao Bi
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Jing Li
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Mengqi Zhang
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Chunyan Cheng
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - David Binks
- Department of Physics and Astronomy and Photon Science Institute, University of Manchester, Manchester M13 9PL, U.K
| | - Jianjun Tian
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, P. R. China
- Shunde Innovation School, University of Science and Technology Beijing, Foshan 528399, Guangdong, P. R. China
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22
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Zhao Q, Chen F, Li C, Shang C, Huang Q, Yan B, Zhu H, Wang K, Zhang W, Zhou T, Ding J. Challenges and developments for the blue perovskite nanocrystal light-emitting diodes. Dalton Trans 2023; 52:3921-3941. [PMID: 36939177 DOI: 10.1039/d3dt00122a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/11/2023]
Abstract
Perovskite nanomaterials have been highly thought as next-generation light emitters after recent development owing to their benefits of simple synthesis, low-cost, large-area, and wide color gamut. Encouragingly, the external quantum efficiencies (EQEs) of green, red, and near-infrared perovskite light-emitting diodes (PeLEDs) have exceeded more than 20%. However, the performance of the blue PeLEDs is still lower than other analogs, which severely limits the applications of PeLEDs in future full-color displays. Herein, we have reviewed the advances in blue perovskite NCs and their applications in blue PeLEDs. Promising blue perovskite emitters and strategies for fabricating highly efficient blue PeLEDs based on perovskite NCs are investigated and highlighted. Moreover, we point out the main challenges in blue perovskite NC LEDs including low electroluminescence efficiency (EL), spectral instability, the difficulty of charge injection, and device optimization. The perspectives for the further development of blue PeLEDs are also presented.
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Affiliation(s)
- Qiqi Zhao
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China.
| | - Feitong Chen
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China.
| | - Changqian Li
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China.
| | - Chenyu Shang
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China.
| | - Qi Huang
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China.
| | - Bin Yan
- College of Energy Storage Technology, Shandong University of Science and Technology, Qingdao 266590, China.
| | - Huiling Zhu
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China.
| | - Kunhua Wang
- College of Energy Storage Technology, Shandong University of Science and Technology, Qingdao 266590, China.
| | - Weiwei Zhang
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China.
| | - Tianliang Zhou
- College of Materials, Xiamen University, Xiamen 361005, China.
| | - Jianxu Ding
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China.
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23
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Zhang J, Zhang T, Ma Z, Yuan F, Zhou X, Wang H, Liu Z, Qing J, Chen H, Li X, Su S, Xie J, Shi Z, Hou L, Shan C. A Multifunctional "Halide-Equivalent" Anion Enabling Efficient CsPb(Br/I) 3 Nanocrystals Pure-Red Light-Emitting Diodes with External Quantum Efficiency Exceeding 23. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209002. [PMID: 36493461 DOI: 10.1002/adma.202209002] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2022] [Revised: 11/28/2022] [Indexed: 06/17/2023]
Abstract
Pure-red perovskite LEDs (PeLEDs) based on CsPb(Br/I)3 nanocrystals (NCs) usually suffer from a compromise in emission efficiency and spectral stability on account of the surface halide vacancies-induced nonradiative recombination loss, halide phase segregation, and self-doping effect. Herein, a "halide-equivalent" anion of benzenesulfonate (BS- ) is introduced into CsPb(Br/I)3 NCs as multifunctional additive to simultaneously address the above challenging issues. Joint experiment-theory characterizations reveal that the BS- can not only passivate the uncoordinated Pb2+ -related defects at the surface of NCs, but also increase the formation energy of halide vacancies. Moreover, because of the strong electron-withdrawing property of sulfonate group, electrons are expected to transfer from the CsPb(Br/I)3 NC to BS- for reducing the self-doping effect and altering the n-type behavior of CsPb(Br/I)3 NCs to near ambipolarity. Eventually, synergistic boost in device performance is achieved for pure-red PeLEDs with CIE coordinates of (0.70, 0.30) and a champion external quantum efficiency of 23.5%, which is one of the best value among the ever-reported red PeLEDs approaching to the Rec. 2020 red primary color. Moreover, the BS- -modified PeLED exhibits negligible wavelength shift under different operating voltages. This strategy paves an efficient way for improving the efficiency and stability of pure-red PeLEDs.
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Affiliation(s)
- Jibin Zhang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Siyuan laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, 510632, P. R. China
| | - Tiankai Zhang
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping, SE-58183, Sweden
| | - Zhuangzhuang Ma
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Fanglong Yuan
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping, SE-58183, Sweden
- Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, College of Chemistry, Beijing Normal University, Beijing, 100875, China
| | - Xin Zhou
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Siyuan laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, 510632, P. R. China
| | - Heyong Wang
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping, SE-58183, Sweden
- Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia, Milan, 20133, Italy
| | - Zhe Liu
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Jian Qing
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Siyuan laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, 510632, P. R. China
| | - Hongting Chen
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Siyuan laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, 510632, P. R. China
| | - Xinjian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Shijian Su
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Jianing Xie
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, School of Physics and Optoelectronic Engineering, Foshan University, Foshan, 528225, China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Lintao Hou
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Siyuan laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, 510632, P. R. China
| | - Chongxin Shan
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
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24
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Liu S, Guo Z, Wu X, Liu X, Huang Z, Li L, Zhang J, Zhou H, Sun LD, Yan CH. Zwitterions Narrow Distribution of Perovskite Quantum Wells for Blue Light-Emitting Diodes with Efficiency Exceeding 15. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208078. [PMID: 36398427 DOI: 10.1002/adma.202208078] [Citation(s) in RCA: 21] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2022] [Revised: 10/18/2022] [Indexed: 06/16/2023]
Abstract
While quasi-two-dimensional (quasi-2D) perovskites have emerged as promising semiconductors for light-emitting diodes (LEDs), the broad-width distribution of quantum wells hinders their efficient energy transfer and electroluminescence performance in blue emission. In particular, the underlying mechanism is closely related to the crystallization kinetics and has yet to be understood. Here for the first time, the influence of bifunctional zwitterions with different coordination affinity on the crystallization kinetics of quasi-2D perovskites is systematically investigated. The zwitterions can coordinate with Pb2+ and also act as co-spacer organic species in quasi-2D perovskites, which collectively inhibit the aggregation of colloidal precursors and shorten the distance of quantum wells. Consequently, restricted nucleation of high-n phases and promoted growth of low-n phases are achieved with moderately coordinated zwitterions, leading to the final film with a more concentrated n distribution and improved energy transfer efficiency. It thus enables high-efficiency blue LEDs with a recorded external quantum efficiency of 15.6% at 490 nm, and the operation stability has also been prolonged to 55.3 min. These results provide useful directions for tuning the crystallization kinetics of quasi-2D perovskites, which is expected to lead to high-performance perovskite LEDs.
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Affiliation(s)
- Shaocheng Liu
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry, Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials, Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Zhenyu Guo
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry, Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials, Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Xianxin Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Zijian Huang
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry, Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials, Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Liang Li
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry, Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials, Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jinwen Zhang
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry, Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials, Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Huanping Zhou
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry, Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials, Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Ling-Dong Sun
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry, Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials, Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Chun-Hua Yan
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry, Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials, Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou, 730000, P. R. China
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25
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Hu Y, Cao S, Qiu P, Yu M, Wei H. All-Inorganic Perovskite Quantum Dot-Based Blue Light-Emitting Diodes: Recent Advances and Strategies. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4372. [PMID: 36558224 PMCID: PMC9781770 DOI: 10.3390/nano12244372] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/15/2022] [Revised: 12/02/2022] [Accepted: 12/06/2022] [Indexed: 06/17/2023]
Abstract
Light-emitting diodes (LEDs) based on all-inorganic lead halide perovskite quantum dots (PQDs) have undergone rapid development especially in the past five years, and external quantum efficiencies (EQEs) of the corresponding green- and red-emitting devices have exceeded 23%. However, the blue-emitting devices are facing greater challenges than their counterparts, and their poor luminous efficiency has hindered the display application of PQD-based LEDs (PeQLEDs). This review focuses on the key challenges of blue-emitting PeQLEDs including low EQEs, short operating lifetime, and spectral instability, and discusses the essential mechanism by referring to the latest research. We then systematically summarize the development of preparation methods of blue emission PQDs, as well as the current strategies on alleviating the poor device performance involved in composition engineering, ligand engineering, surface/interface engineering, and device structural engineering. Ultimately, suggestions and outlooks are proposed around the major challenges and future research direction of blue PeQLEDs.
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Affiliation(s)
- Yuyu Hu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto–Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Shijie Cao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto–Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Peng Qiu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto–Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Meina Yu
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Huiyun Wei
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto–Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
- Engineering Research Center of Clinical Functional Materials and Diagnosis & Treatment Devices of Zhejiang Province, Wenzhou Institute, Wenzhou Institute of Biomaterials & Engineering, University of Chinese Academy of Sciences, Wenzhou 325027, China
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Xu J, Jiang H, Guo S, Xia P, Xu S, Wang C. Environment-friendly Mn and Cu co-doped CsBr nanocrystals with doping-controlled dual-emission and chrominance. NEW J CHEM 2022. [DOI: 10.1039/d2nj03140j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Environment-friendly co-doped CsBr nanocrystals with controllable dual-emission and chrominance have been successfully prepared by using facile one-pot colloidal synthesis approach.
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Affiliation(s)
- Jingkun Xu
- School of Physics and Optoelectronic Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, P. R. China
| | - Hao Jiang
- School of Physics and Optoelectronic Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, P. R. China
| | - Shiming Guo
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, P. R. China
| | - Pengfei Xia
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, P. R. China
| | - Shuhong Xu
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, P. R. China
| | - Chunlei Wang
- Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, P. R. China
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