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Liu S, Fu M, Qiao P, Li Y, Deng D, Hua Y, Xu S, Ma H. Preparation and Luminescence Properties of Broadband Orange-Emitting Persistent ScBaZn 3GaO 7:Bi 3+ Phosphor. Inorg Chem 2024; 63:16780-16790. [PMID: 39178151 DOI: 10.1021/acs.inorgchem.4c02379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/25/2024]
Abstract
This article describes a new kind of afterglow material, ScBaZn3GaO7:Bi3+, which was synthesized through a high-temperature solid-phase method. Its crystal structure, photoluminescent characteristics, and afterglow characteristics were studied and analyzed. Upon excitation at 344 nm, ScBaZn3GaO7:Bi3+ exhibits broadband emission with a central wavelength located at 571 nm (fwhm = 172.98 nm). The sample exhibits an internal quantum efficiency of 65.1%. The bright yellow persistent luminescence of the ScBaZn3GaO7:Bi3+ sample was observed after 365 nm irradiation. Thermoluminescence spectroscopy revealed four primary traps within ScBaZn3GaO7:Bi3+, with depths of 0.676, 0.794, 0.882, and 0.972 eV. The traps located at energy levels of 0.676 and 0.794 eV were identified as the key contributors to the sample's afterglow. Finally, the ScBaZn3GaO7:Bi3+ sample was combined with a UV-LED chip to fabricate a high-power warm white-light-emitting diode (WLED) device, indicating the potential application prospect of ScBaZn3GaO7:Bi3+ phosphor in single-phase warm WLEDs.
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Affiliation(s)
- Shulian Liu
- School of Mechanical and Energy Engineering, Zhejiang University of Science and Technology, Hangzhou 310023, China
| | - Mingwei Fu
- School of Mechanical and Energy Engineering, Zhejiang University of Science and Technology, Hangzhou 310023, China
| | - Peng Qiao
- Zhejiang Academy of Special Equipment Science, Hangzhou 314415, China
| | - Yingguang Li
- School of Mechanical and Energy Engineering, Zhejiang University of Science and Technology, Hangzhou 310023, China
| | - Degang Deng
- Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, China
| | - Youjie Hua
- Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, China
| | - Shiqing Xu
- Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, China
| | - Hongping Ma
- School of Mechanical and Energy Engineering, Zhejiang University of Science and Technology, Hangzhou 310023, China
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Zhang Q, Zhang D, Liao Z, Cao YB, Kumar M, Poddar S, Han J, Hu Y, Lv H, Mo X, Srivastava AK, Fan Z. Perovskite Light-Emitting Diodes with Quantum Wires and Nanorods. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2405418. [PMID: 39183527 DOI: 10.1002/adma.202405418] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2024] [Revised: 06/22/2024] [Indexed: 08/27/2024]
Abstract
Perovskite materials, celebrated for their exceptional optoelectronic properties, have seen extensive application in the field of light-emitting diodes (LEDs), where research is as abundant as the proverbial "carloads of books." In this review, the research of perovskite materials is delved into from a dimensional perspective, with a focus on the exemplary performance of low-dimensional perovskite materials in LEDs. This discussion predominantly revolves around perovskite quantum wires and perovskite nanorods. Perovskite quantum wires are versatile in their growth, compatible with both solution-based and vapor-phase growth, and can be deposited over large areas-even on spherical substrates-to achieve commendable electroluminescence (EL). Perovskite nanorods, on the other hand, boast a suite of superior characteristics, such as polarization properties and tunability of the transition dipole moment, endowing them with the great potential to enhance light extraction efficiency. Furthermore, zero-dimensional (0D) perovskite materials like nanocrystals (NCs) are also the subject of widespread research and application. This review reflects on and synthesizes the unique qualities of the aforementioned materials while exploring their vital roles in the development of high-efficiency perovskite LEDs (PeLEDs).
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Affiliation(s)
- Qianpeng Zhang
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Daquan Zhang
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Zebing Liao
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Yang Bryan Cao
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Mallem Kumar
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Swapnadeep Poddar
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Junchao Han
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Ying Hu
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Hualiang Lv
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Xiaoliang Mo
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Abhishek Kumar Srivastava
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Zhiyong Fan
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
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Yu H, Zhang T, Zhang Z, Liu Z, Sun Q, Huang J, Dai L, Shen Y, Li X, Wang M. High defect tolerance β-CsSnI 3 perovskite light-emitting diodes. MATERIALS HORIZONS 2024. [PMID: 39005219 DOI: 10.1039/d4mh00428k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/16/2024]
Abstract
All-inorganic lead-free CsSnI3 has shown promising potential in optoelectronic applications, particularly in near-infrared perovskite light-emitting diodes (Pero-LEDs). However, non-radiative recombination induced by defects hinders the optoelectronic properties of CsSnI3-based Pero-LEDs, limiting their potential applications. Here, we uncovered that β-CsSnI3 exhibits higher defect tolerance compared to orthorhombic γ-CsSnI3, offering a potential for enhancing the emission efficiency. We further reported on the deposition and stabilization of highly crystalline β-CsSnI3 films with the assistance of cesium formate to suppress electron-phonon scattering and reduce nonradiative recombination. This leads to an enhanced photoluminescence quantum yield up to ∼10%. As a result, near-infrared LEDs based on β-CsSnI3 emitters are achieved with a peak external quantum efficiency of 1.81% and excellent stability under a high current injection of 1.0 A cm-2.
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Affiliation(s)
- Haixuan Yu
- Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, P. R. China.
| | - Tao Zhang
- Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, P. R. China.
| | - Zhiguo Zhang
- Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, P. R. China.
| | - Zhirong Liu
- Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, P. R. China.
| | - Qiang Sun
- Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, P. R. China.
| | - Junyi Huang
- Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, P. R. China.
| | - Letian Dai
- Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, P. R. China.
| | - Yan Shen
- Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, P. R. China.
| | - Xiongjie Li
- Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, P. R. China.
| | - Mingkui Wang
- Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, Hubei, P. R. China.
- Optics Valley Laboratory, Wuhan, Hubei 430074, P. R. China
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Wang N, Wang WW, Liang XW, Wang PY, Liu T, Yao ZQ, Zhao JP, Liu FC. Giant Anisotropic Thermal Expansion Phase Transition of Silver Iodide Anionic Organic-Inorganic Hybrid. Inorg Chem 2024; 63:12350-12359. [PMID: 38887050 DOI: 10.1021/acs.inorgchem.4c01846] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/20/2024]
Abstract
Hybrid metal halide materials with charming phase transition behaviors have attracted considerable attention. In former works, much attention has been focused on the phase transition triggered by the order-disorder or displacement motions of the organic component. However, manipulating the variation of the inorganic component to achieve the phase transition has rarely been reported. Herein, two novel organic-inorganic hybrid materials, [THPM]n[AgX2]n (THPM = 3,4,5,6-tetrahydropyrimidin-1-ium, X = I for 1 and Br for 2) with the [AgX2]nn- anionic chain structure, were synthesized. At 293 K, the [AgX2]nn- chains in 1 were constructed by the tetramer units of Ag atoms, while that in 2 was assembled by the dimer structure. Upon heating to 355 K, owing to the variation of the metallophilic interaction between adjacent Ag atoms, a unique transformation process from tetramer to dimer in [AgI2]nn- chains of 1 can be detected and endow 1 with a giant anisotropic thermal expansion with linear strain of ∼7% and shear strain of ∼20%, which can be used as a mechanical actuator for switching. Alternatively, for 2, no phase transition process can be observed upon the temperature variation. This work provides an effective approach to design phase transition materials triggered by the inorganic part.
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Affiliation(s)
- Nan Wang
- TKL of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin, 300384, P. R. China
| | - Wei-Wei Wang
- TKL of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin, 300384, P. R. China
| | - Xiao-Wen Liang
- TKL of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin, 300384, P. R. China
| | - Pu-Yue Wang
- TKL of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin, 300384, P. R. China
| | - Tong Liu
- TKL of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin, 300384, P. R. China
| | - Zhao-Quan Yao
- TKL of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin, 300384, P. R. China
| | - Jiong-Peng Zhao
- TKL of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin, 300384, P. R. China
| | - Fu-Chen Liu
- TKL of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin, 300384, P. R. China
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Yu Z, Zhao J, Yang Z, Mou Y, Zhang H, Xu R, Wang Q, Zeng L, Lei L, Lin S, Li H, Peng Y, Chen D, Chen M. A Novel PiGF@Diamond Color Converter with a Record Thermal Conductivity for Laser-Driven Projection Display. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2406147. [PMID: 38925142 DOI: 10.1002/adma.202406147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2024] [Revised: 06/18/2024] [Indexed: 06/28/2024]
Abstract
High-brightness laser lighting is confronted with crucial challenges in developing laser-excitable color converting materials with effective heat dissipation and super optical performance. Herein, a novel composite of phosphor-in-glass film on transparent diamond (PiGF@diamond) is designed and fabricated via a facile low-temperature co-sintering strategy. The as-prepared La3Si6N11:Ce3+ (LSN:Ce) PiGF@diamond with well-retained optical properties of raw phosphor shows a record thermal conductivity of ≈599 W m-1 K-1, which is about 60 times higher than that of currently well-used PiGF@sapphire (≈10 W m-1 K-1). As a consequence, this color converter can bear laser power density up to 40.24 W mm-2 and a maximum luminance flux of 5602 lm without luminescence saturation due to efficient inhibition of laser-induced heat accumulation. By further supplementing red spectral component of CaAlSiN3:Eu2+ (CASN:Eu), the PiGF@diamond based white laser diode is successfully constructed, which can yield warm white light with a high color rendering index of 89.3 and find practical LD-driven applications. The findings will pave the way for realizing the commercial application of PiGF composite in laser lighting and display.
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Affiliation(s)
- Zikang Yu
- School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Jiuzhou Zhao
- School of Aerospace Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Zezhong Yang
- College of Physics and Energy, Fujian Normal University, Fuzhou, 350117, China
| | - Yun Mou
- School of Integrated Circuits, Sun Yat-sen University, Shenzhen, 518107, China
| | - Hongjin Zhang
- School of Aerospace Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Ruipeng Xu
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan, 430074, China
| | - Qing Wang
- School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Lingwei Zeng
- School of Chemistry and Chemical Engineering, Hunan University of Science and Technology, Xiangtan, 411201, China
| | - Lei Lei
- Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou, 310018, China
| | - Shisheng Lin
- College of Physics and Energy, Fujian Normal University, Fuzhou, 350117, China
| | - Hong Li
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan, 430074, China
| | - Yang Peng
- School of Aerospace Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Daqin Chen
- College of Physics and Energy, Fujian Normal University, Fuzhou, 350117, China
| | - Mingxiang Chen
- School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
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Yang S, Tang Z, Qu B, Xiao L, Chen Z. Crown-Assisted CsCu 2I 3 Growth and Trap Passivation for Perovskite Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38608287 DOI: 10.1021/acsami.4c01048] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/14/2024]
Abstract
Copper (Cu)-based perovskites are promising for lead-free perovskite light-emitting diodes (PeLEDs). However, it remains a significant challenge to achieve high performance devices due to the nonradiative loss caused by the disordered crystallization and lack of passivation. Crown ethers are known to form host-guest complexes by the interaction between C-O-C groups and certain cations, and 18-crown-6 (18C6) with an appropriate complementary size can interact with Cs+ and Cu+ cations. Herein, we studied the interaction between CsCu2I3 and two crowns with the same cyclic size, 18C6 and dibenzo-18-crown-6 (D18C6). Particularly, D18C6 can reduce the nonradiative recombination rate of CsCu2I3 film by passivating the defects and optimizing the film morphology effectively. The room mean square (RMS) decreased from 5.06 to 2.95 nm, and the PLQY was promoted from 4.71% to 19.9%. Besides, D18C6 can also decrease the barrier of hole injection. The PeLEDs based on D18C6-modified CsCu2I3 realized noticeable improvement with a maximum luminance and EQE of 583 cd/m2 and 0.662%, respectively.
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Affiliation(s)
- Shuang Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Zhenyu Tang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Bo Qu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Lixin Xiao
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Zhijian Chen
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
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Chen X, Huang X. Ce 3+-Activated SrLu 2Al 3ScSiO 12 Cyan-Green-Emitting Garnet-Structured Inorganic Phosphor Materials toward Application in Blue-Chip-Based Phosphor-Converted Solid-State White Lighting. Inorg Chem 2024; 63:5743-5752. [PMID: 38478873 DOI: 10.1021/acs.inorgchem.4c00322] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/26/2024]
Abstract
Phosphor-converted white-light-emitting diodes (WLEDs) with superhigh color rendering index (CRI) are the ongoing pursuit of next-generation solid-state lighting. One of the most important challenges is the limited improvement in CRI on account of the absence of a cyan component in the typical commercial combination. Here, a bright broad-band cyan-green-emitting phosphor with cubic garnet structure, SrLu2Al3ScSiO12:Ce3+ (SLASSO:Ce3+), was successfully reported, which can compensate for the absence of cyan cavity in the 480-520 nm blue-green emission region. With 439 nm blue-light irradiation, the as-fabricated SLASSO:Ce3+ phosphor yields a broad-band cyan-green emission with the maximum emission peak positioned at 525 nm and an appropriate full width at half-maximum (fwhm) of 111 nm, capable of providing more cyan emission component without sacrificing green emission. Meanwhile, the optimal SLASSO:2%Ce3+ phosphor features CIE color coordinates of (0.3254, 0.5470) with cyan-green hue, along with a high internal quantum efficiency of up to 93%. Additionally, thermal stability measurements at different temperatures reveal that the luminescence emission intensity of the proposed phosphor retains 44% of its original integral emission intensity at 423 K with respect to room temperature, while also demonstrating an excellent color stability (ΔE = 5.4 × 10-3). This work shows that the highly efficient SLASSO:Ce3+ garnet phosphor can be utilized as a potential cyan-green-emitting phosphor for filling the cyan gap, resulting in the construction of a high-quality warm WLED with high CRI for "human-centric" sunlight-like full-spectrum solid-state illumination.
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Affiliation(s)
- Xiaoyuan Chen
- College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan 030024, People's Republic of China
| | - Xiaoyong Huang
- College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan 030024, People's Republic of China
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Dávid A, Morát J, Chen M, Gao F, Fahlman M, Liu X. Mapping Uncharted Lead-Free Halide Perovskites and Related Low-Dimensional Structures. MATERIALS (BASEL, SWITZERLAND) 2024; 17:491. [PMID: 38276430 PMCID: PMC10819976 DOI: 10.3390/ma17020491] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2023] [Revised: 01/13/2024] [Accepted: 01/16/2024] [Indexed: 01/27/2024]
Abstract
Research on perovskites has grown exponentially in the past decade due to the potential of methyl ammonium lead iodide in photovoltaics. Although these devices have achieved remarkable and competitive power conversion efficiency, concerns have been raised regarding the toxicity of lead and its impact on scaling up the technology. Eliminating lead while conserving the performance of photovoltaic devices is a great challenge. To achieve this goal, the research has been expanded to thousands of compounds with similar or loosely related crystal structures and compositions. Some materials are "re-discovered", and some are yet unexplored, but predictions suggest that their potential applications may go beyond photovoltaics, for example, spintronics, photodetection, photocatalysis, and many other areas. This short review aims to present the classification, some current mapping strategies, and advances of lead-free halide double perovskites, their derivatives, lead-free perovskitoid, and low-dimensional related crystals.
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Affiliation(s)
- Anna Dávid
- Laboratory of Organic Electronics (LOE), Department of Science and Technology, Linköping University, 60174 Norrköping, Sweden;
| | - Julia Morát
- Department of Physics, Chemistry and Biology (IFM), Linköping University, 58183 Linköping, Sweden; (J.M.); (M.C.); (F.G.)
| | - Mengyun Chen
- Department of Physics, Chemistry and Biology (IFM), Linköping University, 58183 Linköping, Sweden; (J.M.); (M.C.); (F.G.)
| | - Feng Gao
- Department of Physics, Chemistry and Biology (IFM), Linköping University, 58183 Linköping, Sweden; (J.M.); (M.C.); (F.G.)
| | - Mats Fahlman
- Laboratory of Organic Electronics (LOE), Department of Science and Technology, Linköping University, 60174 Norrköping, Sweden;
| | - Xianjie Liu
- Laboratory of Organic Electronics (LOE), Department of Science and Technology, Linköping University, 60174 Norrköping, Sweden;
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