Interdependence of Resistance and Optical Transmission in Conductive Nanowire Networks

Electrical conductivity of random metallic nanowire networks: an analytical consideration along with computer simulation

The current interest in the study of the 2D systems of randomly deposited metallic nanowires is inspired by a combination of their high electrical conductivity with excellent optical transparency. Metallic nanowire networks show great potential for use in numerous technological applications. Although there are models that describe the electrical conductivity of the random nanowire networks through wire resistance, junction resistance, and number density of nanowires, they are either not rigorously justified or contain fitting parameters. We have proposed a model for the electrical conductivity in random metallic nanowire networks. We have mimicked such random nanowire networks as random resistor networks (RRN) produced by the homogeneous, isotropic, and random deposition of conductive zero-width sticks onto an insulating substrate. We studied the electrical conductivity of these RRNs using a mean-field approximation. An analytical dependency of the electrical conductivity on the main physical parameters (the number density and electrical resistances of these wires and of the junctions between them) has been derived. Computer simulations have been performed to validate our theoretical predictions. We computed the electrical conductivity of the RRNs against the number density of the conductive fillers for the junction-resistance-dominated case and for the case where the wire resistance and the junction resistance were equal. The results of the computations were compared with this mean-field approximation. Our computations demonstrated that our analytical expression correctly predicts the electrical conductivity across a wide range of number densities.

Nanowire Waveguides and Lasers: Advances and Opportunities in Photonic Circuits

Due to their single-crystalline structures, comparatively large aspect ratios, tight optical confinement and smooth surfaces, nanowires have increasingly attracted research interests for both fundamental studies and technological applications in on-chip photonic devices. This class of nanostructures typically have cross-sections of 2~200 nm and lengths upwards of several micrometers, allowing for the bridging of the nanoscopic and macroscopic world. In particular, the lasing behaviors can be established from a nanowire resonator with positive feedback via end-facet reflection, making the nanowire a promising candidate in the next generation of optoelectronics. Consequently, versatile nanowire-based devices ranging from nanoscale coherent lasers, optical sensors, waveguides, optical switching, and photonic networks have been proposed and experimentally demonstrated in the past decade. In this article, significant progresses in the nanowire fabrication, lasers, circuits, and devices are reviewed. First, we focus on the achievements of nanowire synthesis and introduce the basics of nanowire optics. Following the cavity configurations and mode categories, then the different light sources consisting of nanowires are presented. Next, we review the recent progress and current status of functional nanowire devices. Finally, we offer our perspective of nanowires regarding their challenges and future opportunities in photonic circuits.

Tiled Monolayer Films of 2D Molybdenum Disulfide Nanoflakes Assembled at Liquid/Liquid Interfaces

Thin films of MoS₂ bilayer nanoflakes, which are predominantly a single flake thick and with flakes in edge-to-edge contact, have been produced via self-assembled tiling at the planar interface between two immiscible liquids. Films of several square centimeters extent can be produced with a total covered area approaching 90% and over 70% of the film covered by single flakes without overlap. Films produced through liquid/liquid assembly are shown to produce a lower uncovered area fraction and more uniform thickness when compared with films of similar areal coverage produced by the "top-down" techniques of spin coating and spray coating. Statistical analysis of flake coverage data, measured by atomic force microscopy (AFM), shows that liquid/liquid assembly produces a distinctly different variation in film thickness than conventional top-down deposition. This supports the hypothesis that the two-dimensional (2D) confinement of liquid/liquid assembly produces more uniform films. Demonstrator field-effect transistors (FETs) manufactured from the films exhibit mobility and on/off current ratios of 0.73 cm² V^-1 s^-1 and 10⁵, respectively, comparable to FETs of similar layout and chemical vapor deposition (CVD)-grown or mechanically cleaved single-crystal MoS₂ channel material. This work demonstrates the use of liquid/liquid interfaces as a useful tool for the self-assembly of high-performance thin-film devices made from dispersions of 2D materials.

The Electro-Optical Performance of Silver Nanowire Networks

Networks of metallic nanowires have the potential to meet the needs of next-generation device technologies that require flexible transparent conductors. At present, there does not exist a first principles model capable of predicting the electro-optical performance of a nanowire network. Here we combine an electrical model derived from fundamental material properties and electrical equations with an optical model based on Mie theory scattering of light by small particles. This approach enables the generation of analogues for any nanowire network and then accurately predicts, without the use of fitting factors, the optical transmittance and sheet resistance of the transparent electrode. Predictions are validated using experimental data from the literature of networks comprised of a wide range of aspect ratios (nanowire length/diameter). The separation of the contributions of the material resistance and the junction resistance allows the effectiveness of post-deposition processing methods to be evaluated and provides a benchmark for the minimum attainable sheet resistance. The predictive power of this model enables a material-by-design approach, whereby suitable systems can be prescribed for targeted technology applications.